CN106656089A - Preparation method for 49S quartz crystal resonator capable of eliminating parasitic oscillation - Google Patents
Preparation method for 49S quartz crystal resonator capable of eliminating parasitic oscillation Download PDFInfo
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- CN106656089A CN106656089A CN201611056946.5A CN201611056946A CN106656089A CN 106656089 A CN106656089 A CN 106656089A CN 201611056946 A CN201611056946 A CN 201611056946A CN 106656089 A CN106656089 A CN 106656089A
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- 239000010453 quartz Substances 0.000 title claims abstract description 43
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 43
- 239000013078 crystal Substances 0.000 title claims abstract description 38
- 230000010355 oscillation Effects 0.000 title claims abstract description 18
- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- 230000003071 parasitic effect Effects 0.000 title abstract description 5
- 230000007797 corrosion Effects 0.000 claims abstract description 19
- 238000005260 corrosion Methods 0.000 claims abstract description 19
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000002253 acid Substances 0.000 claims abstract description 10
- 238000000227 grinding Methods 0.000 claims abstract description 10
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 7
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims abstract description 7
- 238000000605 extraction Methods 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims abstract description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 230000003628 erosive effect Effects 0.000 claims description 5
- 238000010849 ion bombardment Methods 0.000 claims description 4
- 238000007789 sealing Methods 0.000 claims description 4
- 238000005476 soldering Methods 0.000 claims description 4
- 229910017665 NH4HF2 Inorganic materials 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 230000006378 damage Effects 0.000 claims description 3
- 238000005108 dry cleaning Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 239000000853 adhesive Substances 0.000 abstract description 3
- 230000001070 adhesive effect Effects 0.000 abstract description 3
- -1 nitrogen ions Chemical class 0.000 abstract description 2
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 239000007888 film coating Substances 0.000 abstract 1
- 238000009501 film coating Methods 0.000 abstract 1
- 239000000047 product Substances 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000008030 elimination Effects 0.000 description 3
- 238000003379 elimination reaction Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 230000002141 anti-parasite Effects 0.000 description 1
- 239000003096 antiparasitic agent Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0414—Resonance frequency
- H03H2003/0421—Modification of the thickness of an element
- H03H2003/0435—Modification of the thickness of an element of a piezoelectric layer
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The invention discloses a preparation method for a 49S quartz crystal resonator capable of eliminating parasitic oscillation and aims at providing the preparation method for the 49S quartz crystal resonator which has high yield and is resistant to parasitic disturbance. The method comprises the following steps of (a) re-designing the size of a wafer; (b) designing a frequency allowance of the quartz wafer when fine grinding is carried out on a grinding machine; (c) obtaining a corrosion frequency according to a set return frequency and utilizing acid solution to carry out corrosion on the quartz wafer; (d) adopting nitrogen ions to carry out bombardment on the surface of the quartz wafer in low vacuum; (e) designing the size of an electrode; (f) coating a film after determining the thickness of a film layer through a difference between the corrosion frequency and the frequency of the crystal resonator, and forming an extraction electrode; and (g) arranging the quartz wafer after film coating on a pedestal, dispensing conductive adhesive and carrying out high-temperature curing.
Description
Technical field
The present invention relates to a kind of preparation method of the 49S quartz-crystal resonators for eliminating unwanted oscillation.
Background technology
Quartz-crystal resonator, also known as quartz crystal, is resonant element made by using the piezo-electric effect of quartz crystal,
It is used together with semiconductor devices and Resistor-Capacitor Unit, constitutes quartz oscillator.Often use on surface-mounted integrated circuit
49S quartz-crystal resonators, the intensity of the intrinsic unwanted oscillation frequency of this kind of quartz-crystal resonator can shake frequently to the master of crystal
Rate produces interference, and this parasitic intensity exceedes certain scope, oscillating circuit can be caused not work, and the whole machine of generation is bad, especially
It is on high-end electronic products application, it is impossible to match work with whole machine well, market fraction defective is higher, product service life
Short, this there is certain weak point.
The content of the invention
The technical problem to be solved is to overcome the deficiencies in the prior art, there is provided a kind of product yield is high
The preparation method of the 49S quartz-crystal resonators of anti-parasitic disturbances.
The technical solution adopted in the present invention is：The present invention includes a kind of 49S Quartz crystal resonants of elimination unwanted oscillation
The preparation method of device, it is characterised in that：It is comprised the following steps：
A. the length and width size of chip is redesigned, eliminates the spurious clutter of chip；
B. the pre- allowance of frequency that quartz wafer is carried out between carse, medium and small fine gtinding on grinder is designed, upper track grinding work is eliminated
The wafer surface destruction layer that sequence is caused；
C. drawn after suitable corrosion frequency according to the return frequency of setting, the quartz wafer after grinding is entered using acid solution
Row deep erosions；
D. under the conditions of low vacuum, the surface of quartz wafer is bombarded using Nitrogen ion, cleans the surface of quartz wafer；
E. electrode size is redesigned, further suppresses the generation of electrode size extraneous wave；
F. by the corrosion frequency and crystal resonator difference on the frequency of quartz wafer to determine thicknesses of layers after carry out plated film, formed
Extraction electrode, and make its frequency reach prescribed limit；
G. the quartz wafer after plated film is mounted on pedestal, conducting resinl and hot setting on point；
H. the attachment foreign matter on quartz wafer is further cleared away using dry cleaning device；
I. using the electrode of argon ion bombardment plane of crystal, unnecessary film material is laid to come；
J. pedestal and shell are placed in the environment full of nitrogen carries out soldering and sealing, obtains the 49S quartz-crystal resonators..
Further, in step a, the design size of the chip is that 6.490 × 1.730 elimination dimension scales cause
Extraneous wave.
Further, in step e, the electrode includes Top electrode and bottom electrode, and the Top electrode is designed and sized to
6.5 × 1.75 × 0.06 × 2.2 × 1.4, the size of the bottom electrode design is 6.5 × 1.75 × 0.06 × 2.49 × 1.65.
Further, in step b, the pre- allowance of the frequency is designed as WA4000#23750 ± 100
KHz。
Further, in step c, the return frequency is derived by below equation and can obtained：
Δ=2* ρ e* ζ e/ ρ * tF, in formula, ρ e are the density of electrode metal, the thickness of ζ e single-side electrodes, ρ for crystal density,
TfFor the thickness of quartz plate after corrosion.
Further, in step c, the corrosion thickness is 0.04mm, and the acid solution is HF solution or NH4HF2
At least one in solution, the operating temperature of the acid solution is 65 °C.
Further, also include that the quartz wafer with clear water to corroding is carried out clearly between step c and step d
The step of washing and dry.
Further, in step d, the low vacuum condition is referred under the pressure of 1pa～2pa.
Further, the corrosion frequency is 24400KHz.
The invention has the beneficial effects as follows：Compared with prior art, the present invention devises wafer size technique, for same frequency
Rate, reaches elimination spurious clutter, and the interference effect of principal oscillation frequency is minimized；By appropriate design it is thick, in, fine gtinding
Between pre- allowance, make wafer surface more smooth；Deep erosions technique is employed, from original corrosion 0.025mm corruption is brought up to
Erosion 0.04mm, the fineness and cleannes of wafer surface are improved, and finished product resistance averagely declines, master oscillator frequenc starting of oscillation performance
It is improved；Ions Bombardment of the chip before plated film is increased, the foreign matter on quartz plate surface is removed, improves silver layer and quartz plate
Adhesive force, and increase fine setting before electricity cleaning, remove plated film silver layer and fine setting silver layer between foreign matter, reduce crystal vibration
The energy loss for being, reduces impact of the extraneous wave to main vibration wave, improves product yield and product reliability, has well
Practical significance.
Specific embodiment
Technical scheme is described in detail with reference to specific embodiment.
The preparation method of 49S quartz-crystal resonators disclosed by the invention is comprised the following steps：
A. by the design to quartz wafer size, former chip length and width size 6.490 × 1.860 is designed as into 6.490 ×
1.730, and then eliminate the extraneous wave caused because of wafer size ratio；
B. to quartz wafer it is thick, in, reserve frequency quantity between smooth grinding and carry out appropriate design, former final amount of grinding GC4000#
23440 ± 100KHz, is designed as WA4000#23750 ± 100KHz, and the pre- allowance is eliminated because upper track grinding is made in order to be able to maximum
Into wafer surface destruction layer；
C. return frequency is calculated according to actual conditions, return frequency is Δ=2* ρ e* ζ e/ ρ * tF, in formula, ρ e are electrode metal
Density, the thickness of ζ e single-side electrodes, the thickness that ρ is the density of crystal, Tf is quartz plate after corrosion, obtained according to return frequency
Go out suitable corrosion frequency, corrosion frequency is adjusted to 24400KHz by former 24575KHz；Using acid solution to the stone after grinding
English chip carries out deep erosions, and corrosion thickness is 0.04mm, and the acid solution is HF solution or NH4HF2In solution at least one
Kind, the operating temperature of the acid solution is 65 DEG C, with pure water the quartz wafer for corroding is cleaned and dried；
D. under the conditions of the low vacuum of 1pa～2pa, the carrying out of quartz wafer is bombarded using Nitrogen ion bombardment machine, cleaning quartz
The surface of chip, removes the foreign matter on quartz wafer surface, improves the adhesive force of silver layer and quartz plate, reduces impedance；
E. design new electrode size, the electrode includes Top electrode and bottom electrode, its described electrode size by primary electrode chi
Very little 6.5 × 1.75 × 0.06 × 2.49 × 1.65 are designed as the Top electrode size：6.5 × 1.75 × 0.06 × 2.2 × 1.4,
The size 6.5 × 1.75 × 0.06 × 2.49 × 1.65 of the bottom electrode, the electrode size all may be used as wafer size
Suppression to extraneous wave plays an important role；
F. by the corrosion frequency and crystal resonator difference on the frequency of quartz wafer to determine thicknesses of layers after carry out plated film, formed
Extraction electrode, and make its frequency reach prescribed limit；
G. the quartz wafer after plated film is mounted on pedestal, conducting resinl and hot setting on point；
H. the foreign matter on quartz wafer is further cleared away using dry cleaning device；
I. the electrode of plane of crystal is bombarded using argon ion bombardment machine, unnecessary film material is laid to come；
J. pedestal and shell are placed in the environment full of nitrogen carries out soldering and sealing, and the soldering and sealing mode can be electric resistance welding or rolling
Side is welded or glass weldering, finally obtains 49S quartz-crystal resonators.
Present invention can be suitably applied on the high-end product of client, to because caused by the main vibration wave of parasitic wave action apparatus failure can have
Effect is eliminated.
Although embodiments of the invention are described with practical solution, the limit to implication of the present invention is not constituted
System, for those skilled in the art, be all to the modification of its embodiment and with the combination of other schemes according to this specification
Obviously.
Claims (10)
1. it is a kind of eliminate unwanted oscillation 49S quartz-crystal resonators preparation method, it is characterised in that：It includes following step
Suddenly：
A. the length and width size of chip is redesigned, eliminates the spurious clutter of chip；
B. the pre- allowance of frequency that quartz wafer is carried out between carse, medium and small fine gtinding on grinder is designed, upper track grinding work is eliminated
The wafer surface destruction layer that sequence is caused；
C. drawn after suitable corrosion frequency according to the return frequency of setting, the quartz wafer after grinding is entered using acid solution
Row deep erosions；
D. under the conditions of low vacuum, the surface of quartz wafer is bombarded using Nitrogen ion, cleans the surface of quartz wafer；
E. electrode size is redesigned, further suppresses the generation of electrode size extraneous wave；
F. by the corrosion frequency and crystal resonator difference on the frequency of quartz wafer to determine thicknesses of layers after carry out plated film, shape
Into extraction electrode, and its frequency is set to reach prescribed limit；
G. the quartz wafer after plated film is mounted on pedestal, conducting resinl and hot setting, obtain institute's 49S Quartz crystal resonants on point
Device.
2. it is according to claim 1 it is a kind of eliminate unwanted oscillation 49S quartz-crystal resonators preparation method, its feature
It is that methods described is further comprising the steps of：
H. the attachment foreign matter on quartz wafer is further cleared away using dry cleaning device；
I. using the electrode of argon ion bombardment plane of crystal, unnecessary film material is laid to come；
J. pedestal and shell are placed in the environment full of nitrogen carries out soldering and sealing.
3. it is according to claim 1 it is a kind of eliminate unwanted oscillation 49S quartz-crystal resonators preparation method, its feature
It is：In step a, the wafer size is designed as 6.490 × 1.730.
4. it is according to claim 1 it is a kind of eliminate unwanted oscillation 49S quartz-crystal resonators preparation method, its feature
It is：In step e, the electrode includes Top electrode and bottom electrode, the design size of the Top electrode is 6.5 × 1.75 ×
0.06 × 2.2 × 1.4, can effectively suppress bottom electrode described in extraneous wave design size be 6.5 × 1.75 × 0.06 × 2.49 ×
1.65。
5. it is according to claim 1 it is a kind of eliminate unwanted oscillation 49S quartz-crystal resonators preparation method, its feature
It is：In step b, the pre- allowance of the frequency is designed as WA4000#23750 ± 100
KHz。
6. it is according to claim 1 it is a kind of eliminate unwanted oscillation 49S quartz-crystal resonators preparation method, its feature
It is：In step c, the return frequency is derived by below equation and can obtained：
Δ=2* ρ e* ζ e/ ρ * tF, in formula, ρ e are density, the thickness of ζ e single-side electrodes, density, the T that ρ is crystal of electrode metalf
For the thickness of quartz plate after corrosion.
7. it is according to claim 1 it is a kind of eliminate unwanted oscillation 49S quartz-crystal resonators preparation method, its feature
It is：In step c, the corrosion thickness is 0.04mm, and the acid solution is HF solution or NH4HF2In solution at least
One kind, the operating temperature of the acid solution is 65 °C.
8. it is according to claim 1 it is a kind of eliminate unwanted oscillation 49S quartz-crystal resonators preparation method, its feature
It is：Also include the step that the quartz wafer with clear water to corroding is cleaned and dried between step c and step d
Suddenly.
9. it is according to claim 1 it is a kind of eliminate unwanted oscillation 49S quartz-crystal resonators preparation method, its feature
It is：In step d, the low vacuum condition is referred under the pressure of 1pa～2pa.
10. the preparation method of a kind of 49S quartz-crystal resonators for eliminating unwanted oscillation according to claim 7, it is special
Levy and be：The corrosion frequency is 24400KHz.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611056946.5A CN106656089A (en) | 2016-11-26 | 2016-11-26 | Preparation method for 49S quartz crystal resonator capable of eliminating parasitic oscillation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611056946.5A CN106656089A (en) | 2016-11-26 | 2016-11-26 | Preparation method for 49S quartz crystal resonator capable of eliminating parasitic oscillation |
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| CN106656089A true CN106656089A (en) | 2017-05-10 |
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| CN201611056946.5A Pending CN106656089A (en) | 2016-11-26 | 2016-11-26 | Preparation method for 49S quartz crystal resonator capable of eliminating parasitic oscillation |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110417376A (en) * | 2018-04-30 | 2019-11-05 | 珠海东精大电子科技有限公司 | A kind of preparation method of 49S quartz-crystal resonator |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201766559U (en) * | 2010-09-08 | 2011-03-16 | 成都奔月科技有限公司 | Low-frequency high-precision SMD quartz crystal resonator |
| CN103701424A (en) * | 2013-12-24 | 2014-04-02 | 珠海东精大电子科技有限公司 | Preparation method for 49S quartz crystal oscillator |
| CN105207637A (en) * | 2014-05-30 | 2015-12-30 | 珠海东精大电子科技有限公司 | Preparation method of low-aged-rate 49S quartz crystal resonator |
| CN105322905A (en) * | 2014-05-30 | 2016-02-10 | 珠海东精大电子科技有限公司 | Method for preparing high-frequency 49S quartz crystal resonator |
-
2016
- 2016-11-26 CN CN201611056946.5A patent/CN106656089A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201766559U (en) * | 2010-09-08 | 2011-03-16 | 成都奔月科技有限公司 | Low-frequency high-precision SMD quartz crystal resonator |
| CN103701424A (en) * | 2013-12-24 | 2014-04-02 | 珠海东精大电子科技有限公司 | Preparation method for 49S quartz crystal oscillator |
| CN105207637A (en) * | 2014-05-30 | 2015-12-30 | 珠海东精大电子科技有限公司 | Preparation method of low-aged-rate 49S quartz crystal resonator |
| CN105322905A (en) * | 2014-05-30 | 2016-02-10 | 珠海东精大电子科技有限公司 | Method for preparing high-frequency 49S quartz crystal resonator |
Non-Patent Citations (2)
| Title |
|---|
| 江山: "220MHz小型化高频带阻晶体滤波器研制", 《信息科技辑》 * |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110417376A (en) * | 2018-04-30 | 2019-11-05 | 珠海东精大电子科技有限公司 | A kind of preparation method of 49S quartz-crystal resonator |
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