CN106206898B - A kind of production method of light emitting diode - Google Patents
A kind of production method of light emitting diode Download PDFInfo
- Publication number
- CN106206898B CN106206898B CN201610809998.9A CN201610809998A CN106206898B CN 106206898 B CN106206898 B CN 106206898B CN 201610809998 A CN201610809998 A CN 201610809998A CN 106206898 B CN106206898 B CN 106206898B
- Authority
- CN
- China
- Prior art keywords
- light emitting
- emitting diode
- layer
- particles
- production method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 239000002184 metal Substances 0.000 claims abstract description 57
- 229910052751 metal Inorganic materials 0.000 claims abstract description 57
- 239000004065 semiconductor Substances 0.000 claims abstract description 48
- 239000002245 particle Substances 0.000 claims abstract description 41
- 238000000034 method Methods 0.000 claims abstract description 39
- 238000000407 epitaxy Methods 0.000 claims abstract description 35
- 238000000137 annealing Methods 0.000 claims abstract description 22
- 238000005530 etching Methods 0.000 claims abstract description 20
- 238000009826 distribution Methods 0.000 claims abstract description 9
- 239000010410 layer Substances 0.000 claims description 124
- 238000005516 engineering process Methods 0.000 claims description 14
- 239000011241 protective layer Substances 0.000 claims description 8
- 238000001039 wet etching Methods 0.000 claims description 5
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 239000000460 chlorine Substances 0.000 claims description 4
- 229910052801 chlorine Inorganic materials 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 claims description 4
- 230000003628 erosive effect Effects 0.000 claims description 3
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims 1
- 239000004744 fabric Substances 0.000 claims 1
- 239000000463 material Substances 0.000 description 9
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- 239000007771 core particle Substances 0.000 description 7
- 238000001312 dry etching Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 210000000746 body region Anatomy 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 239000013528 metallic particle Substances 0.000 description 2
- 239000008188 pellet Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011859 microparticle Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
Landscapes
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Biophysics (AREA)
- Optics & Photonics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The present invention proposes a kind of production method of light emitting diode, including：One epitaxy piece is provided, and deposits a W metal layer；By the W metal pattern layers, the W metal layer defined in P-type semiconductor region retains, the W metal layer removal on N-type semiconductor region；The epitaxy piece for having pattern metal Ni layers is made annealing treatment, after annealing, graininess distribution is presented in epitaxy on piece in W metal layer；Mask layer is formed on the metallic Ni particles；Using the metallic Ni particles and mask layer as mask structure, technique is etched, first carries out first step etching so that mask layer inside contracts, and then carries out the second step etching again, obtains the light emitting diode with inclined surface, and inclined surface forms nano-micro structure.
Description
Technical field
The present invention relates to technical field of semiconductors, especially a kind of light emitting diode with nano-micro structure inclined side
Production method.
Background technology
The existing LED structure with inclined side makes N electrode, is largely after yellow light light shield, directly utilizes dry method
The mode of etching etches into n type semiconductor layer, then makes electrode, so will appear two aspect problems：（1）Metal N electrode pair
The absorption of side light；（2）Smooth side causes the light sent out inside LED core particle to be easily emitted, it is impossible to be utilized, such as scheme（1）
It is shown.
Chinese patent CN105378950A discloses a kind of top emitting formula light emitting semiconductor device, proposes first that each is only
Vertical luminescence unit is fixed on constant spacing above carrier, then passes through distribution or molded clear between two luminescence units
Layer or particle, achieve the purpose that reflected light, but this method comes with some shortcomings：（1）One is deposited around luminous component
Layer medium, is readily incorporated impurity, cause side P layer, mqw layer connected with N layer, it is finally short-circuit.It is very big in practical LED productions
Part failure such as electric leakage or ESD burst points is appeared in around luminous component.（2）Layer of transparent is only arranged around luminous component
Layer or particle, are not avoided that the absorption part of N electrode.
Invention content
It is an object of the invention to：It is proposed a kind of production method of light emitting diode, inclined side forms the micro- knot of nanometer
Structure increases the diffusing reflection of light so that the light that chip sides are sent out changes light path, is sent out from forward direction, reduces suction of the N electrode to light
Light so that brightness increases；Nano-micro structure and chip material homogeneity will not cause electric leakage or ESD due to introducing other materials
Burst point.
According to the first aspect of the invention, a kind of production method of light emitting diode is provided, including step：
（1）One epitaxy piece is provided, and deposits a W metal layer；
（2）By the W metal pattern layers, the W metal layer defined in P-type semiconductor region retains, N-type semiconductor area
W metal layer removal on domain；
（3）The epitaxy piece for having pattern metal Ni layers is made annealing treatment, after annealing, W metal layer is in epitaxy on piece
Existing graininess distribution；
（4）Mask layer is formed on the metallic Ni particles；
（5）Using the metallic Ni particles and mask layer as mask structure, technique is etched, first carries out first step erosion
It carves so that mask layer inside contracts, and then carries out the second step etching again, obtains the light emitting diode with inclined surface, and nauropemeter
Face forms nano-micro structure.
According to the second aspect of the invention, the production method that another light emitting diode is also provided, including step：
（1）One epitaxy piece is provided, and deposits a W metal layer；
（2）The epitaxy piece for having W metal layer is made annealing treatment, after annealing, particle is presented in epitaxy on piece in W metal layer
Shape is distributed；
（3）The metallic Ni particles are patterned, the metallic Ni particles defined in P-type semiconductor region retain, and N-type is partly led
Metallic Ni particles removal in body region；
（4）Mask layer is formed on the metallic Ni particles；
（5）Using the metallic Ni particles and mask layer as mask structure, technique is etched, first carries out first step erosion
It carves so that mask layer inside contracts, and then carries out the second step etching again, obtains the light emitting diode with inclined surface, and nauropemeter
Face forms nano-micro structure.
Preferably, the thickness of the W metal layer is 3 ~ 200nm.
Preferably, the annealing condition：Temperature is 500 ~ 800 DEG C, and the time is 0.5 ~ 10min.
Preferably, the step（4）In mask layer select photoresist or oxide or metal.
Preferably, the step（4）Step is further included before：Deposit an insulating protective layer for protect positioned at the N-type
The epitaxial layer of semiconductor regions is in step（5）It is not etched first in etch process.
Preferably, the step（5）In the first step etching for first so that mask layer inside contract 0.1 ~ 1 μm.
Preferably, the step（5）In the first step etching use wet etching or dry method etch technology.
Preferably, the step（5）Middle first step dry method etch technology, including：It is passed through oxygen or carbon tetrafluoride or aforementioned
Combination, upper electrode power：150 ~ 2000W, lower electrode power：0 ~ 400W, time：20~200s.
Preferably, the step（5）In the second step etching use dry method etch technology.
Preferably, the step（5）Middle second step dry method etch technology, including：It is passed through boron chloride or chlorine or aforementioned
Combination, upper electrode power：150 ~ 500W, lower electrode power：50 ~ 500W, time：300~600s.
The prior art makes the LED structure with inclined side, typically first makes P-type semiconductor region and N-type is partly led
Body region, core particles inclined surface is smooth structure at this time, then passes through deposition or Moulded pellets in core particles side again.With it is existing
Technology is compared, a kind of production method of light emitting diode provided by the invention, including at least following technique effect：
（1）Prior art processes flow is complex, and cost is higher, and the present invention by the use of metallic particles and mask layer as
Mask structure while the making P-type semiconductor region of light emitting diode and N-type semiconductor region, is formed in inclined side
Nano-micro structure increases the diffusing reflection of light so that the light that chip sides are sent out changes light path, is sent out upward from forward direction, reduces N
Electrode is to the extinction of light so that brightness increases；
（2）The prior art by deposition or Moulded pellets, that is, introduces dissimilar materials, and the present invention is in core particles side
Nano-micro structure is formed in the inclined side of light emitting diode, with chip material homogeneity, will not be caused due to introducing other materials
Electric leakage or ESD burst points.
Other features and advantages of the present invention will be illustrated in the following description, also, partly becomes from specification
It obtains it is clear that being understood by implementing the present invention.The purpose of the present invention and other advantages can be by specification, rights
Specifically noted structure is realized and is obtained in claim and attached drawing.
Description of the drawings
Attached drawing is used to provide further understanding of the present invention, and a part for constitution instruction, the reality with the present invention
Example is applied together for explaining the present invention, is not construed as limiting the invention.In addition, attached drawing data be description summary, be not by
Ratio is drawn.
Fig. 1 is the existing LED structure schematic diagram with inclined side.
Fig. 2 is the production method flow chart according to a kind of light emitting diode of the embodiment of the present invention 1.
Fig. 3 ~ 8 are the manufacturing process according to a kind of light emitting diode of the embodiment of the present invention 1.
Fig. 9 is the production method flow chart according to a kind of light emitting diode of the embodiment of the present invention 2.
Figure 10 ~ 15 are the manufacturing process according to a kind of light emitting diode of the embodiment of the present invention 2.
Each label represents as follows in figure：
100：Epitaxy piece；101：Substrate；102：N type semiconductor layer；103：Luminescent layer；104：P type semiconductor layer；200：Gold
Belong to Ni layers；201：Metallic Ni particles；205：Nano-micro structure；300：Mask layer；400：Insulating protective layer.
Specific embodiment
It elaborates below in conjunction with embodiment and attached drawing to the specific embodiment of the present invention.
Embodiment 1
As shown in Fig. 2, disclose a kind of flow chart for making light emitting diode, including step S101 ~ S105, including：It carries
For an epitaxy piece, and deposit a W metal layer；By the W metal pattern layers, the W metal in P-type semiconductor region is defined
Layer retains, the W metal layer removal on N-type semiconductor region；The epitaxy piece for having pattern metal Ni layers is made annealing treatment,
After annealing, graininess distribution is presented in epitaxy on piece in W metal layer；Mask layer is formed on metallic Ni particles；With metallic Ni particles
And mask layer is etched technique, first carries out first step etching so that mask layer inside contracts, and then carries out again as mask structure
Second step etching obtains the light emitting diode with inclined surface, and inclined surface forms nano-micro structure.Below to each step
It carries out into expansion explanation.
Step S101：As shown in figure 3, providing an epitaxy piece 100, which includes substrate 101 and epitaxial layer, the epitaxy
Layer includes n type semiconductor layer 101, luminescent layer 102 and p type semiconductor layer 103；Ni layers of the deposited metal on the epitaxy piece 100
200, for thickness between 3 ~ 200nm, vapor deposition either sputter or atomic layer deposition or other platings may be used in deposition method
Film method, the preferred evaporation coating method of the present embodiment.
Step S102：As shown in figure 4, W metal layer 200 is patterned, the W metal layer in P-type semiconductor region is defined
Retain, the W metal layer removal on N-type semiconductor region, the P-type semiconductor region is for subsequently making P electrode, N-type semiconductor
Region is for subsequently making N electrode.
Step S103：As shown in figure 5, the epitaxy piece 100 for having pattern metal Ni layers 201 is made annealing treatment, anneal
Afterwards, graininess distribution is presented in epitaxy on piece in W metal layer, and the condition of annealing includes：Temperature is 500 ~ 800 DEG C, and the time is
0.5 ~ 10min, atmosphere N2：25~95L.
Step S104：As shown in fig. 6, mask layer 300, the area and metal of mask layer are formed on metallic Ni particles 201
Ni particles are suitable, and the material of mask layer can select photoresist or oxide or metal, the preferred photoresist of the present embodiment as mask layer,
Photoresist thickness can be 0.5 ~ 3 μm, the figure being made of column photoresist be produced with yellow light processing procedure, step-by-step movement can be used in this process
Exposure machine, contact exposure machine, projection exposure machine or coining mode.
Step S105：As shown in fig. 7, using metallic Ni particles 201 and mask layer 300 as mask structure, sensing coupling is carried out
Plasma etch process is closed, first carries out first step dry etching so that mask layer inside contracts 0.1 ~ 1 μm, first step dry etching
Technique, parameter include：It is passed through 100 ~ 200sccm of oxygen, upper electrode power：1000 ~ 2000W, lower electrode power：0 ~ 50W, when
Between：20~200s；Then as shown in figure 8, carrying out second step dry etching again so that epitaxial layer, which is formed, has nano-micro structure 205
Inclined surface and expose part n type semiconductor layer 102, etch process parameters include：5 ~ 50sccm of boron chloride is passed through, is passed through
60 ~ 180sccm of chlorine, upper electrode power：150 ~ 500W, lower electrode power：50 ~ 500W, time：300 ~ 600s finally distinguishes
P electrode 600 and N electrode 500 are made on p type semiconductor layer 104 and exposed n type semiconductor layer 102, is obtained with nauropemeter
The light emitting diode in face, and inclined surface forms nano-micro structure 105, as shown in Figure 8.
Embodiment 2
As shown in figure 9, disclose another flow chart for making light emitting diode, including step S201 ~ S205, including：
One epitaxy piece is provided, and deposits a W metal layer；The epitaxy piece for having W metal layer is made annealing treatment, after annealing, W metal
Graininess distribution is presented in epitaxy on piece in layer；The metallic Ni particles are patterned, define the W metal in P-type semiconductor region
Particle retains, the metallic Ni particles removal on N-type semiconductor region；Mask layer is formed on the metallic Ni particles；With described
Metallic Ni particles and mask layer are etched technique, first carry out first step etching as mask structure so that and mask layer inside contracts,
Then the second step etching is carried out again, obtains the light emitting diode with inclined surface, and inclined surface forms nano-micro structure.Under
It is carried out in face of each step into expansion explanation.
Step S201：As shown in Figure 10, an epitaxy piece 100 is provided, which includes substrate 101 and epitaxial layer, this is of heap of stone
Crystal layer includes n type semiconductor layer 101, luminescent layer 102 and p type semiconductor layer 103；Ni layers of the deposited metal on the epitaxy piece 100
200, for thickness between 3 ~ 200nm, vapor deposition either sputter or atomic layer deposition or other platings may be used in deposition method
Film method, the preferred method for sputtering of the present embodiment.
Step S202：As shown in figure 11, the epitaxy piece 100 for the epitaxy piece 201 for having W metal layer is made annealing treatment, moved back
After fire, graininess distribution is presented in epitaxy on piece in W metal layer, and the condition of annealing includes：Temperature is 500 ~ 800 DEG C, the time
For 0.5 ~ 10min, atmosphere N2：25~95L.
Step S203：As shown in figure 12, metallic Ni particles 201 are patterned, defines the W metal in P-type semiconductor region
Particle retains, and the metallic Ni particles removal on N-type semiconductor region, the P-type semiconductor region is for subsequently making P electrode, N-type
Semiconductor regions are for subsequently making N electrode.
Step S204：As shown in figure 13, an insulating protective layer 400 is first deposited on metallic Ni particles 201, re-forms mask
Layer 300.The insulating protective layer 400 can select SiO2Or SiN or Al2O3, the preferred chemical vapor deposition of the present embodiment（CVD）10~
The SiO of 30nm thickness2It is formed, the area of insulating protective layer is suitable with epitaxial layer（Area is more than metallic Ni particles）, for protecting
Epitaxial layer positioned at N-type semiconductor region is not etched first in step S205 etch process, as cushioning effect；The mask layer
300 area is suitable with metallic Ni particles, and the material of mask layer can select photoresist or oxide or metal, and the present embodiment is preferred
Photoresist can be 0.5 μm ~ 3 μm as mask layer, photoresist thickness, and the figure being made of column photoresist is produced with yellow light processing procedure,
Step-by-step exposure machine, contact exposure machine, projection exposure machine or coining mode can be used in this process.
Step S205：As shown in figure 14, using metallic Ni particles 201, insulating protective layer 400 and mask layer 300 as mask
Structure carries out inductively coupled plasma etch process, first carries out first step dry etching so that insulating protective layer, mask layer
Single side size relative to metallic Ni particles to inside contracting 0.1 ~ 1 μm, first step dry method etch technology, including：It is passed through tetrafluoride
50 ~ 300sccm of carbon is passed through 5 ~ 200sccm of oxygen, upper electrode power：150 ~ 900W, lower electrode power：50 ~ 400W, time：20
~200s；Then as shown in figure 15, then second step dry etching is carried out so that epitaxial layer forms inclining with nano-micro structure 205
Inclined-plane and part n type semiconductor layer 102 is exposed, etch process parameters include：5 ~ 50sccm of boron chloride is passed through, is passed through chlorine
60 ~ 180sccm, upper electrode power：150 ~ 500W, lower electrode power：50 ~ 500W, time：300 ~ 600s, finally respectively in p-type
P electrode 600 and N electrode 500 are made on semiconductor layer 104 and exposed n type semiconductor layer 102, obtains that there is inclined surface
Light emitting diode, and inclined surface forms nano-micro structure 105, as shown in figure 15.
Embodiment 3
The present embodiment discloses another production method for making light emitting diode, including processing step：
（1）One epitaxy piece is provided, and deposits a W metal layer；
（2）By the W metal pattern layers, the W metal layer defined in P-type semiconductor region retains, N-type semiconductor area
W metal layer removal on domain；
（3）The epitaxy piece for having pattern metal Ni layers is made annealing treatment, after annealing, W metal layer is in epitaxy on piece
Existing graininess distribution；
（4）Mask layer is formed on the metallic Ni particles, and using wet etching so that mask layer inside contracts；
（5）Using the metallic Ni particles and mask layer as mask structure, inductively coupled plasma etching is carried out, is obtained
Light emitting diode with inclined surface, and inclined surface forms nano-micro structure.
The present embodiment and embodiment 1 difference lies in：Being located on metallic Ni particles in the step S105 of embodiment 1
Mask layer, which inside contracts, to be completed by dry method etch technology, and the mask layer of this implementation, which inside contracts, to be completed by wet etching process.
The mask layer of the present embodiment inside contracts relatively low using wet etching process cost, and process conditions are simple, operation easy to produce；And implement
Mask layer inside contracts the uniformity convenient for control relative dimensions using dry method etch technology in example 1.
In conclusion the present invention is by the use of metallic particles and mask layer as mask structure, P-type semiconductor region is being made
While with N-type semiconductor region, nano-micro structure is formed in core particles inclined surface.Compared with prior art, there is following skill
Art advantage：
（1）The technical conditions and material of existing producing line are made full use of, new processing step and new material will not be introduced；
（2）Core particles inclined surface forms nanometer microparticle and epitaxial layer homogeneity, avoids causing side p type semiconductor layer, hair
Photosphere is connected with p type semiconductor layer, and last short circuit causes electric leakage or ESD burst points；
（3）Nano-micro structure not only is provided with around the luminous zone of LED core particle, simultaneously because the nano-micro structure is located at
Around N electrode, absorption of the N metal electrodes to light is avoided.
It should be understood that above-mentioned specific embodiment is only the part preferred embodiment of the present invention, above example is also
It can carry out various combinations, deformation.The scope of the present invention is not limited to above example, all any changes done according to the present invention,
All belong within protection scope of the present invention.
Claims (10)
1. a kind of production method of light emitting diode, including step：
（1）One epitaxy piece is provided, and deposits a W metal layer；
（2）By the W metal pattern layers, the W metal layer defined in P-type semiconductor region retains, on N-type semiconductor region
W metal layer removal；
（3）The epitaxy piece for having pattern metal Ni layers is made annealing treatment, after annealing, W metal layer is in the presentation of epitaxy on piece
Granular distribution；
（4）Mask layer is formed on the metallic Ni particles；
（5）Using the metallic Ni particles and mask layer as mask structure, technique is etched, first step etching is first carried out, makes
It obtains mask layer to inside contract, then carries out the second step etching again, obtain the light emitting diode with inclined surface, and inclined surface is formed
Nano-micro structure.
2. a kind of production method of light emitting diode, including step：
（1）One epitaxy piece is provided, and deposits a W metal layer；
（2）The epitaxy piece for having W metal layer is made annealing treatment, after annealing, graininess point is presented in epitaxy on piece in W metal layer
Cloth；
（3）The metallic Ni particles are patterned, the metallic Ni particles defined in P-type semiconductor region retain, N-type semiconductor area
Metallic Ni particles removal on domain；
（4）Mask layer is formed on the metallic Ni particles；
（5）Using the metallic Ni particles and mask layer as mask structure, technique is etched, first step etching is first carried out, makes
It obtains mask layer to inside contract, then carries out the second step etching again, obtain the light emitting diode with inclined surface, and inclined surface is formed
Nano-micro structure.
3. a kind of production method of light emitting diode according to claim 1 or 2, it is characterised in that：The W metal layer
Thickness be 3 ~ 200nm.
4. a kind of production method of light emitting diode according to claim 1 or 2, it is characterised in that：The annealing
Condition：Temperature is 500 ~ 800 DEG C, and the time is 0.5 ~ 10min.
5. a kind of production method of light emitting diode according to claim 1 or 2, it is characterised in that：The step（4）It
Before further include step：Deposit an insulating protective layer for protect be located at the N-type semiconductor region epitaxial layer in step（5）Erosion
It is not etched first in carving technology.
6. a kind of production method of light emitting diode according to claim 1 or 2, it is characterised in that：The step（5）In
First step etching is for first so that mask layer inside contracts 0.1 ~ 1 μm.
7. a kind of production method of light emitting diode according to claim 1 or 2, it is characterised in that：The step（5）In
First step etching uses wet etching or dry method etch technology.
8. a kind of production method of light emitting diode according to claim 7, it is characterised in that：The step（5）In
One step dry method etch technology, including：It is passed through oxygen or carbon tetrafluoride or aforementioned combinatorial, upper electrode power：150 ~ 2000W, lower electricity
Pole power：0 ~ 400W, time：20~200s.
9. a kind of production method of light emitting diode according to claim 1 or 2, it is characterised in that：The step（5）In
Second step etching uses dry method etch technology.
10. a kind of production method of light emitting diode according to claim 9, it is characterised in that：The step（5）In
Two step dry method etch technologies, including：It is passed through boron chloride or chlorine or aforementioned combinatorial, upper electrode power：150 ~ 500W, lower electrode
Power：50 ~ 500W, time：300~600s.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610809998.9A CN106206898B (en) | 2016-09-08 | 2016-09-08 | A kind of production method of light emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610809998.9A CN106206898B (en) | 2016-09-08 | 2016-09-08 | A kind of production method of light emitting diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106206898A CN106206898A (en) | 2016-12-07 |
| CN106206898B true CN106206898B (en) | 2018-07-06 |
Family
ID=58067299
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610809998.9A Active CN106206898B (en) | 2016-09-08 | 2016-09-08 | A kind of production method of light emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106206898B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102306623A (en) * | 2011-09-23 | 2012-01-04 | 厦门市三安光电科技有限公司 | Method for preparing nanoscale silica graphic mask layer |
| CN102983235A (en) * | 2012-12-11 | 2013-03-20 | 映瑞光电科技(上海)有限公司 | Manufacturing method of nanoscale patterned substrate |
| CN103053034A (en) * | 2010-08-02 | 2013-04-17 | 光州科学技术院 | Fabricating method of nano structure for antireflection and fabricating method of photo device integrated with antireflection nano structure |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06310428A (en) * | 1993-04-26 | 1994-11-04 | Matsushita Electric Ind Co Ltd | Manufacture of quantum box |
| KR100682877B1 (en) * | 2005-07-12 | 2007-02-15 | 삼성전기주식회사 | Light emitting diode and fabrication method of the same |
| KR101047639B1 (en) * | 2010-04-19 | 2011-07-07 | 엘지이노텍 주식회사 | Semiconductor light emitting device, light emitting device package and fabricating method for semiconductor light emitting device |
| KR101729263B1 (en) * | 2010-05-24 | 2017-04-21 | 엘지이노텍 주식회사 | Light emitting device, method for fabricating the light emitting device and light emitting device package |
| TWI488336B (en) * | 2012-06-07 | 2015-06-11 | Lextar Electronics Corp | Light emitting diode and method of fabricating the same |
-
2016
- 2016-09-08 CN CN201610809998.9A patent/CN106206898B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103053034A (en) * | 2010-08-02 | 2013-04-17 | 光州科学技术院 | Fabricating method of nano structure for antireflection and fabricating method of photo device integrated with antireflection nano structure |
| CN102306623A (en) * | 2011-09-23 | 2012-01-04 | 厦门市三安光电科技有限公司 | Method for preparing nanoscale silica graphic mask layer |
| CN102983235A (en) * | 2012-12-11 | 2013-03-20 | 映瑞光电科技(上海)有限公司 | Manufacturing method of nanoscale patterned substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106206898A (en) | 2016-12-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101790799A (en) | Light emitting diodes and fabrication methods thereof | |
| US9070839B2 (en) | Method of manufacturing a light emitting diode | |
| CN106784192B (en) | A kind of light-emitting diode chip for backlight unit and preparation method thereof | |
| CN102157632B (en) | Method for improving luminous efficiency of LED (light-emitting diode) by utilizing ZnO nano-cone array | |
| CN106206896B (en) | The production method of compound pattern Sapphire Substrate and its epitaxial wafer | |
| CN108987557A (en) | A kind of flip LED chips and preparation method thereof, LED component | |
| CN106058003B (en) | A method of promoting LED chip brightness | |
| CN105206724A (en) | LED chip manufacturing method and LED chip | |
| CN105140352B (en) | GaN base LED array micro-display device and preparation method thereof | |
| EP3451393A1 (en) | Light-emitting element and method for preparing same | |
| US20120292634A1 (en) | Galium-nitride light emitting device of microarray type structure and manufacturing thereof | |
| CN106025012A (en) | Preparation method of LED chip and LED chip prepared by adopting method | |
| CN103400908A (en) | Surface-roughened light-emitting diode and manufacturing method thereof | |
| EP2721651B1 (en) | Method for forming current diffusion layer in semiconductor light emitting device and method for fabricating semiconductor light emitting device | |
| CN116387428B (en) | LED chip preparation method | |
| CN106206898B (en) | A kind of production method of light emitting diode | |
| CN103426981B (en) | A kind of GaN semiconductor LED chip manufacture method | |
| CN102122686A (en) | Method for manufacturing light-emitting diode | |
| CN108538981A (en) | A kind of light-emitting diode chip for backlight unit and preparation method thereof | |
| CN109244207A (en) | A kind of LED chip and preparation method thereof | |
| KR100873187B1 (en) | Manufacturing method of light emitting diode | |
| CN103311379B (en) | A kind of GaN base LED and the method manufacturing GaN base LED | |
| CN209418533U (en) | A kind of LED chip | |
| CN105932133B (en) | A kind of high brightness LED chip and preparation method thereof | |
| CN106887496B (en) | A kind of production method of light emitting diode |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20231025 Address after: Yuanqian village, Shijing Town, Nan'an City, Quanzhou City, Fujian Province Patentee after: QUANZHOU SAN'AN SEMICONDUCTOR TECHNOLOGY Co.,Ltd. Address before: No. 1721 Lvling Road, Siming District, Xiamen City, Fujian Province, 361003 Patentee before: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY Co.,Ltd. |