CN106206898A - A kind of manufacture method of light emitting diode - Google Patents
A kind of manufacture method of light emitting diode Download PDFInfo
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- CN106206898A CN106206898A CN201610809998.9A CN201610809998A CN106206898A CN 106206898 A CN106206898 A CN 106206898A CN 201610809998 A CN201610809998 A CN 201610809998A CN 106206898 A CN106206898 A CN 106206898A
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- 238000000034 method Methods 0.000 title claims abstract description 61
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 239000002184 metal Substances 0.000 claims abstract description 59
- 239000004065 semiconductor Substances 0.000 claims abstract description 49
- 238000000407 epitaxy Methods 0.000 claims abstract description 37
- 239000002245 particle Substances 0.000 claims abstract description 35
- 238000000137 annealing Methods 0.000 claims abstract description 23
- 238000005530 etching Methods 0.000 claims abstract description 22
- 238000009826 distribution Methods 0.000 claims abstract description 9
- 239000010410 layer Substances 0.000 claims description 124
- 238000005516 engineering process Methods 0.000 claims description 14
- 239000011241 protective layer Substances 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 5
- 238000001039 wet etching Methods 0.000 claims description 5
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 239000000460 chlorine Substances 0.000 claims description 4
- 229910052801 chlorine Inorganic materials 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 2
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- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims description 2
- 239000000463 material Substances 0.000 description 9
- 239000007771 core particle Substances 0.000 description 7
- 238000001312 dry etching Methods 0.000 description 5
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- 238000010521 absorption reaction Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
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- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 239000013528 metallic particle Substances 0.000 description 2
- 239000008188 pellet Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- HYXIRBXTCCZCQG-UHFFFAOYSA-J [C+4].[F-].[F-].[F-].[F-] Chemical compound [C+4].[F-].[F-].[F-].[F-] HYXIRBXTCCZCQG-UHFFFAOYSA-J 0.000 description 1
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- 230000008033 biological extinction Effects 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
Abstract
The present invention proposes the manufacture method of a kind of light emitting diode, including: an epitaxy sheet is provided, and deposits a W metal layer；By described W metal pattern layers, the W metal layer in definition P-type semiconductor region retains, and the W metal layer on N-type semiconductor region is removed；Being made annealing treatment by the epitaxy sheet of tool pattern metal Ni layer, after annealing, W metal layer presents graininess distribution on epitaxy sheet；Described metallic Ni particles is formed mask layer；Using described metallic Ni particles and mask layer as mask structure, it is etched technique, first carries out first step etching so that mask layer inside contracts, carry out second step etching the most again, obtain the light emitting diode with inclined surface, and inclined surface forms nano-micro structure.
Description
Technical field
The present invention relates to technical field of semiconductors, a kind of light emitting diode with nano-micro structure inclined side
Manufacture method.
Background technology
The existing LED structure with inclined side, makes N electrode, after major part is gold-tinted light shield, directly utilizes dry method
The mode of etching, etches into n type semiconductor layer, then makes electrode, so there will be two aspect problems: (1) metal N electrode pair
The absorption of ambient light；(2) smooth side makes the easy outgoing of light sent inside LED core particle, it is impossible to be utilized, such as figure (1)
Shown in.
Chinese patent CN105378950A discloses a kind of top emitting formula light emitting semiconductor device, proposes first that each is only
Vertical luminescence unit is fixed on above carrier with constant spacing, then by distribution or molded clear between two luminescence units
Layer or granule, reach to reflect the purpose of light, but the method come with some shortcomings: (1) deposition one around luminous component
Layer medium, is readily incorporated impurity, causes side P layer, mqw layer to connect with N shell, finally short circuit.In actual LED produces the biggest
A part lost efficacy as electric leakage or the quick-fried point of ESD occur in around luminous component.(2) around luminous component, layer of transparent is only arranged
Layer or granule, the absorption part for N electrode cannot be avoided.
Summary of the invention
It is an object of the invention to: propose the manufacture method of a kind of light emitting diode, its inclined side forms the micro-knot of nanometer
Structure, adds the diffuse-reflectance of light so that the light that chip sides sends changes light path, sends from forward, reduces the N electrode suction to light
Light so that brightness increases；Nano-micro structure and chip material homogeneity, will not cause electric leakage or ESD owing to introducing other materials
Quick-fried point.
According to the first aspect of the invention, it is provided that the manufacture method of a kind of light emitting diode, including step:
(1) an epitaxy sheet is provided, and deposits a W metal layer；
(2) by described W metal pattern layers, the W metal layer in definition P-type semiconductor region retains, on N-type semiconductor region
W metal layer remove；
(3) being made annealing treatment by the epitaxy sheet of tool pattern metal Ni layer, after annealing, W metal layer presents on epitaxy sheet
Granular distribution；
(4) on described metallic Ni particles, mask layer is formed；
(5) using described metallic Ni particles and mask layer as mask structure, it is etched technique, first carries out first step etching, make
Obtain mask layer to inside contract, carry out second step etching the most again, obtain the light emitting diode with inclined surface, and inclined surface is formed
Nano-micro structure.
According to the second aspect of the invention, the manufacture method of another kind of light emitting diode is also provided for, including step:
(1) an epitaxy sheet is provided, and deposits a W metal layer；
(2) being made annealing treatment by the epitaxy sheet of tool W metal layer, after annealing, W metal layer presents graininess on epitaxy sheet and divides
Cloth；
(3) being patterned by described metallic Ni particles, the metallic Ni particles in definition P-type semiconductor region retains, N-type semiconductor district
Metallic Ni particles on territory is removed；
(4) on described metallic Ni particles, mask layer is formed；
(5) using described metallic Ni particles and mask layer as mask structure, it is etched technique, first carries out first step etching, make
Obtain mask layer to inside contract, carry out second step etching the most again, obtain the light emitting diode with inclined surface, and inclined surface is formed
Nano-micro structure.
Preferably, the thickness of described W metal layer is 3 ~ 200nm.
Preferably, described annealing condition: temperature is 500 ~ 800 DEG C, the time is 0.5 ~ 10min.
Preferably, the mask layer in described step (4) selects photoresistance or oxide or metal.
Preferably, further comprise the steps of: deposition one insulating protective layer before described step (4) and be positioned at described N-type for protection
The epitaxial layer of semiconductor regions is not first etched in step (5) etch process.
Preferably, in described step (5), first step etching is used for first making mask layer inside contract 0.1 ~ 1 μm.
Preferably, in described step (5), first step etching uses wet etching or dry method etch technology.
Preferably, first step dry method etch technology in described step (5), including: it is passed through oxygen or carbon tetrafluoride or aforementioned
Combination, upper electrode power: 150 ~ 2000W, lower electrode power: 0 ~ 400W, time: 20 ~ 200s.
Preferably, in described step (5), second step etching uses dry method etch technology.
Preferably, second step dry method etch technology in described step (5), including: it is passed through boron chloride or chlorine or aforementioned
Combination, upper electrode power: 150 ~ 500W, lower electrode power: 50 ~ 500W, time: 300 ~ 600s.
Prior art makes the LED structure with inclined side, it is common that first make P-type semiconductor region and N-type is partly led
Body region, now core particles inclined surface is smooth structure, the most again in core particles side by deposition or Moulded pellets.With existing
Technology is compared, the manufacture method of a kind of light emitting diode that the present invention provides, and at least includes techniques below effect:
(1) prior art processes flow process is complex, relatively costly, and the present invention utilizes metallic particles and mask layer as mask
Structure, while the making P-type semiconductor region and N-type semiconductor region of light emitting diode, forms nanometer at inclined side
Micro structure, adds the diffuse-reflectance of light so that the light that chip sides sends changes light path, sends upward from forward, reduces N electrode
Extinction to light so that brightness increases；
(2) prior art is in core particles side by deposition or Moulded pellets, i.e. introduces dissimilar materials, and the present invention is to send out
The inclined side of optical diode forms nano-micro structure, with chip material homogeneity, will not cause electric leakage owing to introducing other materials
Or the quick-fried point of ESD.
Other features and advantages of the present invention will illustrate in the following description, and, partly become from description
Obtain it is clear that or understand by implementing the present invention.The purpose of the present invention and other advantages can be by description, rights
Structure specifically noted in claim and accompanying drawing realizes and obtains.
Accompanying drawing explanation
Accompanying drawing is for providing a further understanding of the present invention, and constitutes a part for description, with the reality of the present invention
Execute example together for explaining the present invention, be not intended that limitation of the present invention.Additionally, accompanying drawing data be describe summary, be not by
Ratio is drawn.
Fig. 1 is the existing LED structure schematic diagram with inclined side.
Fig. 2 is the manufacture method flow chart of a kind of light emitting diode according to the embodiment of the present invention 1.
Fig. 3 ~ 8 are the manufacturing process of a kind of light emitting diode according to the embodiment of the present invention 1.
Fig. 9 is the manufacture method flow chart of a kind of light emitting diode according to the embodiment of the present invention 2.
Figure 10 ~ 15 are the manufacturing process of a kind of light emitting diode according to the embodiment of the present invention 2.
In figure, each label is expressed as follows:
100: epitaxy sheet；101: substrate；102:N type semiconductor layer；103: luminescent layer；104:P type semiconductor layer；200: W metal
Layer；201: metallic Ni particles；205: nano-micro structure；300: mask layer；400: insulating protective layer.
Detailed description of the invention
Below in conjunction with embodiment and accompanying drawing, the detailed description of the invention of the present invention is elaborated.
Embodiment 1
As in figure 2 it is shown, disclose a kind of flow chart making light emitting diode, including step S101 ~ S105, including: provide one
Epitaxy sheet, and deposit a W metal layer；By described W metal pattern layers, the W metal layer in definition P-type semiconductor region is protected
Staying, the W metal layer on N-type semiconductor region is removed；The epitaxy sheet of tool pattern metal Ni layer is made annealing treatment, annealing
After, W metal layer presents graininess distribution on epitaxy sheet；Metallic Ni particles is formed mask layer；With metallic Ni particles and cover
Film layer, as mask structure, is etched technique, first carries out first step etching so that mask layer inside contracts, and carries out second the most again
Step etching, obtains the light emitting diode with inclined surface, and inclined surface forms nano-micro structure.Below each step is carried out
Progress opens explanation.
Step S101: as shown in Figure 3, it is provided that an epitaxy sheet 100, this epitaxy sheet includes substrate 101 and epitaxial layer, this epitaxy
Layer includes n type semiconductor layer 101, luminescent layer 102 and p type semiconductor layer 103；This epitaxy sheet 100 deposits W metal layer
200, thickness is between 3 ~ 200nm, and deposition process can use evaporation or sputter or ald or other platings
Film method, the preferred evaporation coating method of the present embodiment.
Step S102: as shown in Figure 4, patterns W metal layer 200, the W metal layer in definition P-type semiconductor region
Retaining, the W metal layer on N-type semiconductor region is removed, and this P-type semiconductor region is used for follow-up making P electrode, N-type semiconductor
Region is used for follow-up making N electrode.
Step S103: as it is shown in figure 5, the epitaxy sheet 100 of tool pattern metal Ni layer 201 is made annealing treatment, annealing
After, W metal layer presents graininess distribution on epitaxy sheet, and the condition of annealing includes: temperature is 500 ~ 800 DEG C, and the time is
0.5 ~ 10min, atmosphere is N2: 25 ~ 95L.
Step S104: as shown in Figure 6, forms mask layer 300, the area of mask layer and metal on metallic Ni particles 201
Ni granule is suitable, and the material of mask layer can select photoresistance or oxide or metal, the preferred photoresistance of the present embodiment as mask layer,
Photoresistance thickness can be 0.5 ~ 3 μm, uses gold-tinted processing procedure to produce the figure being made up of column photoresistance, and this process can use step-by-step movement
Exposure machine, contact exposure machine, projection exposure machine or impressing mode.
Step S105: as it is shown in fig. 7, using metallic Ni particles 201 and mask layer 300 as mask structure, carry out sensing coupling
Close plasma etch process, first carry out first step dry etching so that mask layer inside contracts 0.1 ~ 1 μm, first step dry etching
Technique, parameter includes: be passed through oxygen 100 ~ 200sccm, upper electrode power: 1000 ~ 2000W, lower electrode power: 0 ~ 50W, time
Between: 20 ~ 200s；The most as shown in Figure 8, then carry out second step dry etching so that epitaxial layer is formed has nano-micro structure 205
Inclined plane and expose part n type semiconductor layer 102, etch process parameters includes: is passed through boron chloride 5 ~ 50sccm, is passed through
Chlorine 60 ~ 180sccm, upper electrode power: 150 ~ 500W, lower electrode power: 50 ~ 500W, time: 300 ~ 600s, finally distinguish
P type semiconductor layer 104 and exposed n type semiconductor layer 102 make P electrode 600 and N electrode 500, obtains that there is nauropemeter
The light emitting diode in face, and inclined surface formation nano-micro structure 205.
Embodiment 2
As it is shown in figure 9, disclose the another kind of flow chart making light emitting diode, including step S201 ~ S205, including: provide
One epitaxy sheet, and deposit a W metal layer；Being made annealing treatment by the epitaxy sheet of tool W metal layer, after annealing, W metal layer exists
Graininess distribution is presented on epitaxy sheet；Described metallic Ni particles is patterned, the metallic Ni particles in definition P-type semiconductor region
Retaining, the metallic Ni particles on N-type semiconductor region is removed；Described metallic Ni particles is formed mask layer；With described metal
Ni granule and mask layer, as mask structure, are etched technique, first carry out first step etching so that mask layer inside contracts, then
Carry out second step etching again, obtain the light emitting diode with inclined surface, and inclined surface forms nano-micro structure.The most right
Each step carries out progress and opens explanation.
Step S201: as shown in Figure 10, it is provided that an epitaxy sheet 100, this epitaxy sheet includes substrate 101 and epitaxial layer, and this is built
Crystal layer includes n type semiconductor layer 101, luminescent layer 102 and p type semiconductor layer 103；This epitaxy sheet 100 deposits W metal layer
200, thickness is between 3 ~ 200nm, and deposition process can use evaporation or sputter or ald or other platings
Film method, the preferred method for sputtering of the present embodiment.
Step S202: as shown in figure 11, makes annealing treatment the epitaxy sheet 100 of the epitaxy sheet 201 of tool W metal layer, moves back
After fire, W metal layer presents graininess distribution on epitaxy sheet, and the condition of annealing includes: temperature is 500 ~ 800 DEG C, the time
Being 0.5 ~ 10min, atmosphere is N2: 25 ~ 95L.
Step S203: as shown in figure 12, patterns metallic Ni particles 201, the W metal in definition P-type semiconductor region
Granule retains, and the metallic Ni particles on N-type semiconductor region is removed, and this P-type semiconductor region is used for follow-up making P electrode, N-type
Semiconductor regions is used for follow-up making N electrode.
Step S204: as shown in figure 13, first deposits an insulating protective layer 400 on metallic Ni particles 201, then forms mask
Layer 300.This insulating protective layer 400 can select SiO2Or SiN or Al2O3, the preferred chemical vapor deposition (CVD) of the present embodiment 10 ~
The SiO of 30nm thickness2Formed, the area of insulating protective layer and epitaxial layer quite (area is more than metallic Ni particles), be used for protecting
The epitaxial layer being positioned at N-type semiconductor region is not first etched, as cushioning effect in step S205 etch process；This mask layer
The area of 300 is suitable with metallic Ni particles, and the material of mask layer can select photoresistance or oxide or metal, and the present embodiment is preferred
Photoresistance is as mask layer, and photoresistance thickness can be 0.5 μm ~ 3 μm, uses gold-tinted processing procedure to produce the figure being made up of column photoresistance,
This process can use step-by-step exposure machine, contact exposure machine, projection exposure machine or impressing mode.
Step S205: as shown in figure 14, using metallic Ni particles 201, insulating protective layer 400 and mask layer 300 as mask
Structure, carries out inductively coupled plasma etch process, first carries out first step dry etching so that insulating protective layer, mask layer
Single side size relative to metallic Ni particles all to inside contracting 0.1 ~ 1 μm, first step dry method etch technology, including: be passed through tetrafluoride
Carbon 50 ~ 300sccm, is passed through oxygen 5 ~ 200sccm, upper electrode power: 150 ~ 900W, lower electrode power: 50 ~ 400W, the time: 20
~200s；The most as shown in figure 15, then carry out second step dry etching so that epitaxial layer is formed has inclining of nano-micro structure 205
Inclined-plane and expose part n type semiconductor layer 102, etch process parameters includes: is passed through boron chloride 5 ~ 50sccm, is passed through chlorine
60 ~ 180sccm, upper electrode power: 150 ~ 500W, lower electrode power: 50 ~ 500W, time: 300 ~ 600s, the most respectively in p-type
Make P electrode 600 and N electrode 500 on semiconductor layer 104 and exposed n type semiconductor layer 102, obtain that there is inclined surface
Light emitting diode, and inclined surface formation nano-micro structure 205.
Embodiment 3
Manufacture method disclosing another making light emitting diode of the present embodiment, including processing step:
(1) an epitaxy sheet is provided, and deposits a W metal layer；
(2) by described W metal pattern layers, the W metal layer in definition P-type semiconductor region retains, on N-type semiconductor region
W metal layer remove；
(3) being made annealing treatment by the epitaxy sheet of tool pattern metal Ni layer, after annealing, W metal layer presents on epitaxy sheet
Granular distribution；
(4) on described metallic Ni particles, form mask layer, and use wet etching so that mask layer inside contracts；
(5) using described metallic Ni particles and mask layer as mask structure, carry out inductively coupled plasma etching, had
The light emitting diode of inclined surface, and inclined surface formation nano-micro structure.
The present embodiment is with the difference of embodiment 1: being positioned on metallic Ni particles in step S105 of embodiment 1
It is to be completed by dry method etch technology that mask layer inside contracts, and the mask layer of this enforcement to inside contract be to be completed by wet etching process.
It is relatively low that the mask layer of the present embodiment inside contracts employing wet etching process cost, and process conditions are simple, it is simple to production operation；And implement
In example 1, mask layer inside contracts the uniformity using dry method etch technology to be easy to control relative dimensions.
In sum, the present invention is to utilize metallic particles and mask layer as mask structure, is making P-type semiconductor region
While N-type semiconductor region, form nano-micro structure at core particles inclined surface.Compared with prior art, there is following skill
Art advantage:
(1) make full use of technical conditions and the material of existing product line, new processing step and new material will not be introduced；
(2) core particles inclined surface forms nanometer microparticle and epitaxial layer homogeneity, it is to avoid cause side p type semiconductor layer, luminescent layer
Connect with p type semiconductor layer, finally short circuit, cause electric leakage or the quick-fried point of ESD；
(3) not only luminous zone in LED core particle is provided around nano-micro structure, simultaneously because this nano-micro structure is positioned at N electricity
Around pole, it is to avoid the N metal electrode absorption to light.
It should be appreciated that above-mentioned specific embodiments is only the part preferred embodiment of the present invention, above example is also
Various combination, deformation can be carried out.The scope of the present invention is not limited to above example, all any changes done according to the present invention,
Within all belonging to protection scope of the present invention.
Claims (10)
1. a manufacture method for light emitting diode, including step:
(1) an epitaxy sheet is provided, and deposits a W metal layer；
(2) by described W metal pattern layers, the W metal layer in definition P-type semiconductor region retains, on N-type semiconductor region
W metal layer remove；
(3) being made annealing treatment by the epitaxy sheet of tool pattern metal Ni layer, after annealing, W metal layer presents on epitaxy sheet
Granular distribution；
(4) on described metallic Ni particles, mask layer is formed；
(5) using described metallic Ni particles and mask layer as mask structure, it is etched technique, first carries out first step etching, make
Obtain mask layer to inside contract, carry out second step etching the most again, obtain the light emitting diode with inclined surface, and inclined surface is formed
Nano-micro structure.
2. a manufacture method for light emitting diode, including step:
(1) an epitaxy sheet is provided, and deposits a W metal layer；
(2) being made annealing treatment by the epitaxy sheet of tool W metal layer, after annealing, W metal layer presents graininess on epitaxy sheet and divides
Cloth；
(3) being patterned by described metallic Ni particles, the metallic Ni particles in definition P-type semiconductor region retains, N-type semiconductor district
Metallic Ni particles on territory is removed；
(4) on described metallic Ni particles, mask layer is formed；
(5) using described metallic Ni particles and mask layer as mask structure, it is etched technique, first carries out first step etching, make
Obtain mask layer to inside contract, carry out second step etching the most again, obtain the light emitting diode with inclined surface, and inclined surface is formed
Nano-micro structure.
The manufacture method of a kind of light emitting diode the most according to claim 1 and 2, it is characterised in that: described W metal layer
Thickness be 3 ~ 200nm.
The manufacture method of a kind of light emitting diode the most according to claim 1 and 2, it is characterised in that: described annealing
Condition: temperature is 500 ~ 800 DEG C, the time is 0.5 ~ 10min.
The manufacture method of a kind of light emitting diode the most according to claim 1 and 2, it is characterised in that: described step (4) it
Before further comprise the steps of: deposition one insulating protective layer and be positioned at the epitaxial layer in described N-type semiconductor region for protection and lose in step (5)
Carving technology is not first etched.
The manufacture method of a kind of light emitting diode the most according to claim 1 and 2, it is characterised in that: in described step (5)
First step etching is for first making mask layer inside contract 0.1 ~ 1 μm.
The manufacture method of a kind of light emitting diode the most according to claim 1 and 2, it is characterised in that: in described step (5)
First step etching uses wet etching or dry method etch technology.
The manufacture method of a kind of light emitting diode the most according to claim 7, it is characterised in that: in described step (5)
One step dry method etch technology, including: it is passed through oxygen or carbon tetrafluoride or aforementioned combinatorial, upper electrode power: 150 ~ 2000W, lower electricity
Pole power: 0 ~ 400W, time: 20 ~ 200s.
The manufacture method of a kind of light emitting diode the most according to claim 1 and 2, it is characterised in that: in described step (5)
Second step etching uses dry method etch technology.
The manufacture method of a kind of light emitting diode the most according to claim 9, it is characterised in that: in described step (5)
Two step dry method etch technology, including: it is passed through boron chloride or chlorine or aforementioned combinatorial, upper electrode power: 150 ~ 500W, bottom electrode
Power: 50 ~ 500W, time: 300 ~ 600s.
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| CN201610809998.9A CN106206898B (en) | 2016-09-08 | 2016-09-08 | A kind of production method of light emitting diode |
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| CN201610809998.9A CN106206898B (en) | 2016-09-08 | 2016-09-08 | A kind of production method of light emitting diode |
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