CN204118110U - A kind of LED chip with high reverse--bias electrode - Google Patents
A kind of LED chip with high reverse--bias electrode Download PDFInfo
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- CN204118110U CN204118110U CN201420638989.4U CN201420638989U CN204118110U CN 204118110 U CN204118110 U CN 204118110U CN 201420638989 U CN201420638989 U CN 201420638989U CN 204118110 U CN204118110 U CN 204118110U
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Abstract
The utility model discloses a kind of LED chip with high reverse--bias electrode; comprise n-type semiconductor layer, multi-quantum well active region and the p-type semiconductor layer of growth on substrate; n-type semiconductor layer is manufactured with n-type electrode; p-type semiconductor layer makes p-type electrode; it is characterized in that: described p-type electrode comprises the transparency conducting layer be produced on successively in p-type semiconductor layer, adhesiveness current barrier layer, metallic reflective layer, metal adhesion layers, metal contact layer and insulating protective layer, describes the manufacture method of this LED chip simultaneously.The utility model utilizes high-reflectivity metal reflector layer to reduce metal electrode to the absorption of light, again a large amount of light is reflexed to other light-emitting areas, improve the extraction efficiency of light, utilize adhesiveness current barrier layer to solve electric current congestion problems simultaneously, improve the uniformity of pulse current injectingt, avoid local overheating, and adhesiveness current barrier layer can improve the adhesiveness with reflective metals, finally comprehensively improves luminous efficiency and the useful life of LED.
Description
Technical field
The utility model relates to LED chip technical field, and particularly a kind of have LED chip of high reverse--bias electrode and preparation method thereof.
Background technology
LED is the pn diode made by the semi-conducting material with direct band gap, and at thermal equilibrium, a large amount of electron energies is not enough to transit to conduction band from valence band.If apply a forward bias voltage drop, then electrons transits to conduction band from valence band, and in valence band, forms corresponding room simultaneously.Under suitable condition, electronics and hole combine in pn tie region, and the energy of electronics sends in the form of light, and the injection of power supply makes electronics and hole constantly add to n-type semiconductor and p-type semiconductor, makes luminescence process continue to carry out.A traditional blue green light LED chip structure as shown in Figure 1; it can be divided into N-shaped gallium nitride 11, multiple quantum well light emitting district 12, p-type gallium nitride 13, adhesiveness current barrier layer 14, transparency conducting layer 15, p-type electrode 16, insulating protective layer 17, and electrode structure plates Au or Cr, Au on p-type gallium nitride and N-shaped gallium nitride.This mesa structure just inevitably makes electric current extending transversely, because p-type gallium nitride conductivity is poor, adopt this electrode structure can make current convergence square region under the electrodes, generation current blocks up effect, too high and the light-emitting zone of local temperature is caused to concentrate on base part region, because light-transmission metallic difference absorbs light, a large amount of light is blocked and cannot extracts and be converted into heat, and final result is just reduction of luminous efficiency and the useful life of LED.
To block up effect to solve electric current, prior art widely uses the SiO of poor adhesion
2as current barrier layer, utilize current barrier layer insulation characterisitic, impel electric current to spread to transparency conducting layer, after transparency conducting layer, uniform current is injected in p-type semiconductor layer.But current barrier layer can not solve metal electrode shading extinction problem, and metal electrode and SiO
2adhesiveness is poor, easily occurs that electrode drops situation, and therefore this technology still needs to improve.
Summary of the invention
For the deficiencies in the prior art, the utility model provides a kind of and has LED chip of high reverse--bias electrode and preparation method thereof.
The technical solution of the utility model is: a kind of LED chip with high reverse--bias electrode; comprise n-type semiconductor layer, multi-quantum well active region and the p-type semiconductor layer of growth on substrate; n-type semiconductor layer is manufactured with n-type electrode; p-type semiconductor layer makes p-type electrode, it is characterized in that: described p-type electrode comprises the transparency conducting layer be produced on successively in p-type semiconductor layer, adhesiveness current barrier layer, metallic reflective layer, metal adhesion layers, metal contact layer and insulating protective layer.
Described insulating protective layer is coated on outside transparency conducting layer, adhesiveness current barrier layer, metallic reflective layer, metal adhesion layers, metal contact layer, and insulating protective layer goes out part metals contact layer through etch exposed.
Described transparency conducting layer is the transparency conducting layer that ITO or ZnO makes; Described adhesiveness current barrier layer is Al
2o
3the adhesiveness current barrier layer made; Described metallic reflective layer is the metallic reflective layer that Al or Ag makes; Described metal adhesion layers is the metal adhesion layers that a kind of material in Ti, Cr, Pt, Ni is made; Described metal contact layer is the metal contact layer that Au makes; Described insulating protective layer is SiO
2, Al
2o
3, the insulating protective layer made of a kind of material in SiON.
There is a preparation method for the LED chip of high reverse--bias electrode, comprising: (1) growing n-type semiconductor layer, multi-quantum well active region and p-type semiconductor layer successively on substrate; (2) etch in described p-type semiconductor layer subregion, etching p-type semiconductor layer and multi-quantum well active region, exposing n-type semiconductor layer; (3) in the n-type semiconductor layer exposed, make n-type electrode, the p-type semiconductor layer do not etched make p-type electrode, it is characterized in that: in described step (3), the manufacture method of p-type electrode comprises following steps:
S1 makes transparency conducting layer in described p-type semiconductor layer;
S2 plates adhesiveness current barrier layer on described transparency conducting layer;
S3 plates metallic reflective layer on described current barrier layer;
S4 plates metal adhesion layers on described metallic reflective layer;
S5 plates metal contact layer on described metal adhesion layers;
S6 is at described chip surface evaporation insulating protective layer;
S7 is to the etching of described insulating protective layer, and metal contact layer is out exposed.
In described step S2, adhesiveness current barrier layer is prepared from by MOCVD, comprises following making step:
Chip manufacture product are put into the reative cell of LP-MOCVD equipment by S01, and now chamber pressure is 10-25torr, graphite plate rotating speed between 500-1000 r/min, at N
2400-700 DEG C is heated to, process 5-15 minute under atmosphere;
S02 by Al source, oxygen source with 1:(1-10) mol ratio send in reative cell, change chamber pressure is 15-45torr simultaneously, starts to grow Al
2o
3film, growth rate is 0.5nm/min-10nm/min, and growth time is 10-100min;
After S03 growth course terminates, chamber pressure is brought up to 50-100torr, increase the N passing into reaction chamber
2flow also purges, and waiting temperature takes out chip manufacture product after being reduced to normal temperature.
The material of described transparency conducting layer is ITO or ZnO; The material of described adhesiveness current barrier layer is Al
2o
3; The material of described metallic reflective layer is the single metal or alloy of Al, Ag; The material of described metal adhesion layers is the single metal or alloy in Ti, Cr, Pt and Ni; The material of described metal contact layer is Au or Au alloy, as Au/Ti alloy, Au/Ag alloy; Described insulation protection layer material is SiO
2, Al
2o
3with the single of SiON or composite material.
The beneficial effects of the utility model are: utilize high-reflectivity metal reflector layer to reduce metal electrode to the absorption of light, again a large amount of light is reflexed to other light-emitting areas, improve the extraction efficiency of light, utilize adhesiveness current barrier layer to solve electric current congestion problems simultaneously, improve the uniformity of pulse current injectingt, avoid local overheating, and the surface roughness of the adhesiveness current barrier layer that MOCVD makes, surface area is large, there is very high adsorption capacity, improve the adhesiveness with reflective metals, reduce the use of light absorbing metal between reflective metals and current barrier layer, final comprehensive luminous efficiency and useful life of improving LED.
Accompanying drawing explanation
Fig. 1 is traditional blue green light LED chip structure schematic diagram;
Fig. 2 is the LED chip structure figure with high reflectance electrode described in the utility model.
Embodiment
Below in conjunction with accompanying drawing and case study on implementation, the utility model is described in further detail:
Embodiment 1: as shown in Figure 2, preparation method of the present utility model comprises the p-type semiconductor layer 3 of Mg doping that (1) grows n-type semiconductor layer 1 that bottom Si adulterates, InGaN/GaN multi-quantum well active region 2 and the superiors successively on substrate; (2) ICP etching is carried out, exposing n-type semiconductor layer 1 to part of p-type semiconductor layer 3 and multi-quantum well active region 2; (3) in the n-type semiconductor layer 1 exposed, make n-type electrode, the p-type semiconductor layer 3 do not etched makes p-type electrode, and wherein, the manufacture method of p-type electrode comprises following steps:
Step 1: plate transparency conducting layer 4 in described p-type semiconductor layer 3, selected materials is ITO.
Step 2: plate adhesiveness current barrier layer 5 on described transparency conducting layer 4, selected materials is the Al that MOCVD makes
2o
3, concrete steps are as follows: chip is put into the reative cell of LP-MOCVD equipment by (1), and now chamber pressure is 10-25torr, and graphite plate rotating speed is set to 500 revs/min, at N
2be heated to 400 DEG C under atmosphere, process 5 minutes; (2) pass in reative cell by Al source, oxygen source with the mol ratio of 1:1, wherein also produce by boasting Al raw material with gas for liquid in Al source, and change chamber pressure is 15-45torr simultaneously, starts to grow Al
2o
3film, growth rate is 0.5nm/min; (3) after growth course terminates, chamber pressure is brought up to 50torr, increase the N passing into reaction chamber
2flow reduces temperature by purging, after temperature is reduced to normal temperature (25-50 °), take out LED chip.
Step 3: plate metallic reflective layer 6 on described adhesiveness current barrier layer 5, selected materials is Al.
Step 4: plate metal adhesion layers 7 on described metallic reflective layer 6, selected materials is Ti.
Step 5: plate metal contact layer 8 on described metal adhesion layers 7, selected materials is Au.
Step 6: insulating protective layer 9 on whole LED chip plated surface, selected materials is SiO
2.
Step 7: etch described insulating protective layer 9, out exposed for metal contact layer 8.
Embodiment 2: as shown in Figure 2, preparation method of the present utility model comprises the p-type semiconductor layer 3 of Mg doping that (1) grows n-type semiconductor layer 1 that bottom Si adulterates, InGaN/GaN multi-quantum well active region 2 and the superiors successively on substrate; (2) ICP etching is carried out, exposing n-type semiconductor layer 1 to part of p-type semiconductor layer 3 and multi-quantum well active region 2; (3) in the n-type semiconductor layer 1 exposed, make n-type electrode, the p-type semiconductor layer 3 do not etched makes p-type electrode, and wherein, the manufacture method of p-type electrode comprises following steps:
Step 1: plate transparency conducting layer 4 in described p-type semiconductor layer 3, selected materials is ZnO.
Step 2: plate adhesiveness current barrier layer 5 on described transparency conducting layer 4, selected materials is the Al that MOCVD makes
2o
3, concrete steps are as follows: chip is put into the reative cell of LP-MOCVD equipment by (1), and now chamber pressure is 10-25torr, and graphite plate rotating speed is set to 1000 revs/min, at N
2be heated to 700 DEG C under atmosphere, process 15 minutes; (2) pass in reative cell by Al source, oxygen source with the mol ratio of 1:10, wherein also produce by boasting Al raw material with gas for liquid in Al source, and change chamber pressure is 15-45torr simultaneously, starts to grow Al
2o
3film, growth rate is 10nm/min; (3) after growth course terminates, chamber pressure is brought up to 100torr, increase the N passing into reaction chamber
2flow reduces temperature by purging, after temperature is reduced to normal temperature (25-50 °), take out LED chip.
Step 3: plate metallic reflective layer 6 on described adhesiveness current barrier layer 5, selected materials is Ag.
Step 4: plate metal adhesion layers 7 on described metallic reflective layer 6, selected materials is Ni.
Step 5: plate metal contact layer 8 on described metal adhesion layers 7, selected materials is Au.
Step 6: insulating protective layer 9 on whole LED chip plated surface, selected materials is SiON.
Step 7: etch described insulating protective layer 9, out exposed for metal contact layer 8.
Above-mentioned example is illustrative principle of the present utility model and effect only, but not for limiting the utility model.Any person skilled in the art scholar all without prejudice under spirit of the present utility model and category, can modify above-described embodiment or changes.Therefore, such as have in art and usually know that the knowledgeable modifies or changes not departing from all equivalences completed under the spirit and technological thought that the utility model discloses, must be contained by claim of the present utility model.
Claims (8)
1. one kind has the LED chip of high reverse--bias electrode; comprise n-type semiconductor layer, multi-quantum well active region and the p-type semiconductor layer of growth on substrate; n-type semiconductor layer is manufactured with n-type electrode; p-type semiconductor layer makes p-type electrode, it is characterized in that: described p-type electrode comprises the transparency conducting layer be produced on successively in p-type semiconductor layer, adhesiveness current barrier layer, metallic reflective layer, metal adhesion layers, metal contact layer and insulating protective layer.
2. the LED chip with high reverse--bias electrode according to claim 1; it is characterized in that: described insulating protective layer is coated on outside transparency conducting layer, adhesiveness current barrier layer, metallic reflective layer, metal adhesion layers, metal contact layer, and insulating protective layer goes out metal contact layer through etch exposed.
3. the LED chip with high reverse--bias electrode according to claim 1 and 2, is characterized in that: described transparency conducting layer is the transparency conducting layer that ITO or ZnO makes.
4. the LED chip with high reverse--bias electrode according to claim 1 and 2, is characterized in that: described adhesiveness current barrier layer is Al
2o
3the adhesiveness current barrier layer made.
5. the LED chip with high reverse--bias electrode according to claim 1 and 2, is characterized in that: described metallic reflective layer is the metallic reflective layer that Al or Ag makes.
6. the LED chip with high reverse--bias electrode according to claim 1 and 2, is characterized in that: described metal adhesion layers is the metal adhesion layers that a kind of material in Ti, Cr, Pt, Ni is made.
7. the LED chip with high reverse--bias electrode according to claim 1 and 2, is characterized in that: described metal contact layer is the metal contact layer that Au makes.
8. the LED chip with high reverse--bias electrode according to claim 1 and 2, is characterized in that: described insulating protective layer is SiO
2, Al
2o
3, the insulating protective layer made of a kind of material in SiON.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420638989.4U CN204118110U (en) | 2014-10-31 | 2014-10-31 | A kind of LED chip with high reverse--bias electrode |
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|---|---|---|---|
| CN201420638989.4U CN204118110U (en) | 2014-10-31 | 2014-10-31 | A kind of LED chip with high reverse--bias electrode |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104319333A (en) * | 2014-10-31 | 2015-01-28 | 广东德力光电有限公司 | LED chip with high-reflectivity electrodes and preparation method thereof |
| CN107180900A (en) * | 2016-03-11 | 2017-09-19 | 三星电子株式会社 | Luminescent device |
| CN111189036A (en) * | 2018-11-15 | 2020-05-22 | 堤维西交通工业股份有限公司 | Lamp shell device capable of heating and melting ice |
-
2014
- 2014-10-31 CN CN201420638989.4U patent/CN204118110U/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104319333A (en) * | 2014-10-31 | 2015-01-28 | 广东德力光电有限公司 | LED chip with high-reflectivity electrodes and preparation method thereof |
| CN104319333B (en) * | 2014-10-31 | 2017-10-20 | 广东德力光电有限公司 | A kind of LED chip with high reflection electrode and preparation method thereof |
| CN107180900A (en) * | 2016-03-11 | 2017-09-19 | 三星电子株式会社 | Luminescent device |
| US10930817B2 (en) | 2016-03-11 | 2021-02-23 | Samsung Electronics Co., Ltd. | Light-emitting device |
| US10978614B2 (en) | 2016-03-11 | 2021-04-13 | Samsung Electronics Co., Ltd. | Light-emitting device |
| CN111189036A (en) * | 2018-11-15 | 2020-05-22 | 堤维西交通工业股份有限公司 | Lamp shell device capable of heating and melting ice |
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Granted publication date: 20150121 Termination date: 20171031 |
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| CF01 | Termination of patent right due to non-payment of annual fee |