CN102983235A - Manufacturing method of nanoscale patterned substrate - Google Patents
Manufacturing method of nanoscale patterned substrate Download PDFInfo
- Publication number
- CN102983235A CN102983235A CN2012105331726A CN201210533172A CN102983235A CN 102983235 A CN102983235 A CN 102983235A CN 2012105331726 A CN2012105331726 A CN 2012105331726A CN 201210533172 A CN201210533172 A CN 201210533172A CN 102983235 A CN102983235 A CN 102983235A
- Authority
- CN
- China
- Prior art keywords
- mask layer
- metal nanoparticle
- substrate
- patterned substrate
- manufacture method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Abstract
The invention provides a manufacturing method of a nanoscale patterned substrate, which comprises the steps that a substrate is provided; a mask layer is formed on the substrate; metal nanoparticles are spin-coated or sprayed on the mask layer; the specific heat capacity of the mask layer is greater than that of the metal nanoparticles; a melting point of the metal nanoparticles is greater than that of the mask layer; laser is adopted to irradiate the metal nanoparticles to allow the temperature of the metal nanoparticles to reach the melting point of the mask layer so as to form a patterned mask layer; the metal nanoparticles are removed; the patterned mask layer serves as a mask for etching the substrate; and the patterned mask layer is removed to form the nanoscale patterned substrate. According to the method, the laser is adopted to heat the metal nanoparticles on the mask layer, and allows the temperature of the metal nanoparticles to reach the melting point of the mask layer to melt the mask layer contacted with the metal nanoparticles so as to form the patterning the mask layer, and the mask layer is further adopted to pattern the substrate. The manufacturing method has the advantages of simple process and low process cost.
Description
Technical field
The present invention relates to LED manufacturing technology field, relate in particular to a kind of manufacture method of nano patterned substrate.
Background technology
In the LED manufacturing technology process, because saphire substrate material and epitaxial material all differ greatly to refractive index from lattice constant, thermal expansion factor.These physical property differences directly cause the epitaxial material of Grown of low quality, cause LED internal quantum efficiency (IQE) to be restricted, and then affect the raising of external quantum efficiency (EQE) and light efficiency.
In order to improve LED efficient, industry has been introduced patterned low temperature buffer layer, and described patterned low temperature buffer layer can improve internal quantum efficiency, specifically, then epitaxial growth low temperature buffer layer on substrate carries out graphically other epitaxial loayer of afterwards regrowth to described low temperature buffer layer first.So, namely need three steps of epitaxial growth of epitaxial growth-graphical-again, so that complex process, time-consuming.
Therefore, graphical sapphire substrate (Patterned Sapphire Substrate, PSS) technology is introduced into, itself and method difference before are, the PSS technology has been accomplished the figure on the original low temperature buffer layer on the substrate, that is to say patterned substrate but not graphical low temperature buffer layer has so just overcome above-mentioned shortcoming.The principle that the PSS technology can improve LED efficient is effectively to reduce poor row's density, reduces the epitaxial growth defective, promotes the epitaxial wafer quality, reduces non-radiative recombination center, has improved interior quantum effect; In addition, the PSS structure has increased the order of reflection of photon at the sapphire interface place, the probability of photon effusion LED active area is increased, thereby light extraction efficiency is improved.PSS mainly makes flow process and comprises: mask layer is made, mask layer is graphical, mask pattern is removed four steps to transfer and the mask layer of substrate.Photoetching technique conventional on micron order just can satisfy the graphical process requirements of mask layer, but, along with the pattern of PSS technology is seted out towards nanoscale by micron order, cost and the difficulty of the process of conventional patterned substrate can't be applicable to large-scale production.
The patterned method of nanoscale PSS (NPSS:nano-PSS) technology mask layer is mainly nano impression at present.The basic thought of nano impression is by forming nano level pattern at mould, with die marks on the medium that is formed on the substrate, medium is the very thin polymer film of one deck normally, by mould the hot pressing of medium or the methods such as irradiation that see through mould are made the media structure sclerosis, thereby retain figure.Nano impression has very high requirement to the resolution of mould, planarization, uniformity, surface etc., and, in the moulding process, aiming between mould and the impression materials, the depth of parallelism, pressure uniformity, temperature homogeneity, ejection technique etc. all exist more problem.
Summary of the invention
The invention provides a kind of manufacture method of nano patterned substrate, utilize laser that the metal nanoparticle on the mask layer is heated up, make the temperature of metal nanoparticle reach the fusing point of mask layer, thereby the mask layer that fusing contacts with metal nanoparticle, reach the purpose of pattern mask layer, and then utilize the mask layer patterned substrate, the method has the advantage that technique is simple, process costs is low.
The invention provides a kind of manufacture method of nano patterned substrate, comprising:
Substrate is provided, forms mask layer at described substrate;
Spin coating or sprinkling metal nanoparticle on described mask layer, the specific heat capacity of described mask layer is greater than the specific heat capacity of described metal nanoparticle, and the fusing point of described metal nanoparticle is greater than the fusing point of described mask layer;
Utilize the described metal nanoparticle of Ear Mucosa Treated by He Ne Laser Irradiation, make the temperature of described metal nanoparticle reach the fusing point of described mask layer, to form patterned mask layer;
Remove described metal nanoparticle;
With described patterned mask layer as the described substrate of mask etching;
Remove described patterned mask layer, form nano patterned substrate.
Optionally, the specific heat capacity of described mask layer is four times of specific heat capacity of described metal nanoparticle at least.
Optionally, the fusing point of described metal nanoparticle is higher at least 500 ℃ than the fusing point of described mask layer.
Optionally, the material of described metal nanoparticle is Ag or Au.
Optionally, the material of described mask layer is polymer.
Optionally, the fusing point of described mask layer is less than 1000 ℃.
Optionally, the thickness of described mask layer is 10nm ~ 1000nm.
Optionally, described metal nanoparticle is the metal nano ball.
Optionally, the diameter of described metal nano ball is greater than the thickness of described mask layer.
Optionally, utilize the method for etching to remove described metal nanoparticle.
Optionally, the consistent wavelength of the plasma resonance of the wavelength of described laser and described metal nanoparticle.
Optionally, utilize the method for cmp or etching to remove described mask layer.
The invention provides a kind of manufacture method of nano patterned substrate, the manufacture method of described nano patterned substrate heats up to metal nanoparticle by laser, make the temperature of metal nanoparticle reach the fusing point of mask layer, thereby the mask layer that fusing contacts with metal nanoparticle, reach the purpose of pattern mask layer, and then utilize the mask layer patterned substrate.The method need not be used high-precision photoetching equipment, also impresses without mould, has the advantage that technique is simple, process costs is low.
Description of drawings
Fig. 1 is the flow chart of manufacture method of the nano patterned substrate of the embodiment of the invention;
Fig. 2 A ~ 2F is the generalized section of each step of manufacture method of the nano patterned substrate of the embodiment of the invention.
Embodiment
Mention that in background technology existing NPSS method has defective separately, and process costs is had higher requirement.The invention provides a kind of manufacture method of nano patterned substrate, the manufacture method of described nano patterned substrate heats up to metal nanoparticle by laser, make the temperature of metal nanoparticle reach the fusing point of mask layer, thereby the mask layer that fusing contacts with metal nanoparticle, reach the purpose of pattern mask layer, and then utilize the mask layer patterned substrate.The method need not be used high-precision photoetching equipment, also impresses without mould, and it is simple to have technique, the advantage that process costs is low.
Below in conjunction with accompanying drawing the present invention is described in more detail, has wherein represented the preferred embodiments of the present invention, should the described those skilled in the art of understanding can revise the present invention described here, and still realize advantageous effects of the present invention.Therefore, following description is appreciated that extensively knowing for those skilled in the art, and not as limitation of the present invention.
For clear, whole features of practical embodiments are not described.In the following description, be not described in detail known function and structure, the confusion because they can make the present invention owing to unnecessary details.Will be understood that in the exploitation of any practical embodiments, must make a large amount of implementation details to realize developer's specific objective, for example according to relevant system or relevant commercial restriction, change into another embodiment by an embodiment.In addition, will be understood that this development may be complicated and time-consuming, but only be routine work to those skilled in the art.
In the following passage, with way of example the present invention is described more specifically with reference to accompanying drawing.According to the following describes and claims, advantages and features of the invention will be clearer.It should be noted that accompanying drawing all adopts very the form of simplifying and all uses non-accurately ratio, only in order to convenient, the purpose of the aid illustration embodiment of the invention lucidly.
Please refer to Fig. 1, it is the flow chart of manufacture method of the nano patterned substrate of the embodiment of the invention, and described method comprises the steps:
Step S021 provides substrate, forms mask layer at described substrate;
Step S022, spin coating or sprinkling metal nanoparticle on described mask layer, the specific heat capacity of described mask layer is greater than the specific heat capacity of described metal nanoparticle, and the fusing point of described metal nanoparticle is greater than the fusing point of described mask layer;
Step S023 utilizes the described metal nanoparticle of Ear Mucosa Treated by He Ne Laser Irradiation, makes the temperature of described metal nanoparticle reach the fusing point of described mask layer, to form patterned mask layer;
Step S024 removes described metal nanoparticle;
Step S025, with described patterned mask layer as the described substrate of mask etching;
Step S026 removes described patterned mask layer, forms nano patterned substrate.
The core concept of the method is, by laser metal nanoparticle is heated up, make the temperature of metal nanoparticle reach the fusing point of mask layer, thereby melt the mask layer that contacts with metal nanoparticle, reach the purpose of pattern mask layer, and then utilize the mask layer patterned substrate.
With reference to Fig. 2 A, execution in step S021 provides substrate 101, forms mask layer 102 at substrate 101.In the present embodiment, described substrate 101 is Sapphire Substrate, and large and fusing point is lower than 1000 ℃ polymer for specific heat capacity for mask layer 102, and the thickness of mask layer 102 is 10nm ~ 1000nm, and the method for available chemical vapour deposition (CVD) or physical vapour deposition (PVD) forms.Concrete, the specific heat capacity of mask layer 102 needs greater than follow-up spin coating or is sprayed at the specific heat capacity of described mask layer metal nanoparticle.Preferred, the specific heat capacity of mask layer 102 is four times of specific heat capacity of metal nanoparticle at least.Like this, in the process of Ear Mucosa Treated by He Ne Laser Irradiation the rate of rise in temperature of mask layer 102 much smaller than metal nanoparticle.
With reference to figure 2B, execution in step S022, spin coating or sprinkling metal nanoparticle 103 on described mask layer 102.The fusing point of described metal nanoparticle 103 is avoided metal nanoparticle 103 fusing distortion in technical process greater than the fusing point of described mask layer 102, and preferred, the fusing point of metal nanoparticle 103 is higher at least 500 ℃ than the fusing point of described mask layer 102.Described metal nanoparticle can be the metal nano ball particle, the material of described metal nano ball particle 103 is preferably Au or Ag, diameter is 10nm ~ 1000nm, and greater than the thickness of mask layer 102, can avoid like this metal nano ball particle 103 mask layer 104 that submerges fully.Those skilled in the art can select according to concrete process requirements the diameter of metal nanoparticle.
With reference to figure 2C, execution in step S023 utilizes the described metal nano ball particle 103 of laser 104 irradiations, forms patterned mask layer 102 '.Described optical maser wavelength is selected according to the diameter of metal nano ball particle 103 and material, is preferably the LASER Light Source with the consistent wavelength of the plasma resonance of metal nanoparticle, and metal nano ball particle 103 can obtain the heating effect of optimum like this.
In this step process, because the specific heat capacity of mask layer 102 is four times of specific heat capacity of metal nano ball particle 103 at least, the rate of climb of the temperature of metal nano ball particle 103 will be far longer than the rate of rise in temperature of mask layer 102.Like this, the temperature of metal nano ball particle 103 can reach rapidly the fusing point of mask layer 102, the mask layer 102 that contacts with metal nano ball particle 103 reaches its fusing point and melts, metal nanoparticle 102 sinks to mask layer 103, until touch the higher Sapphire Substrate of fusing point 101, form patterned mask layer 102 '.
With reference to figure 2D, execution in step S024 removes described metal nano ball particle 103.Behind patterned mask layer 102 ' cooling curing, described metal nano ball particle 103 is removed, so just formed the hole 103 ' that exposes Sapphire Substrate at patterned mask layer 102 '.The preferred wet-etching technology that adopts removes metal nanoparticle in the present embodiment, for example, can select described metal nano ball particle 103 etch rates highlyer, and the material of etch mask layer 102 hardly is with the described metal nano ball particle 103 of smooth removal.
With reference to figure 2E, execution in step S025, with patterned mask layer 102 ' as the described substrate 101 of mask etching.Useful wet etching or dry etching come the described Sapphire Substrate 101 of etching.Certainly, as select the etching liquid that can both carry out etching to metal nano ball particle 103 and Sapphire Substrate 101, temperature and the process time of etching technics are controlled, can be implemented in completing steps S024 and step S025 in the step.
With reference to figure 2F, execution in step S026 removes described patterned mask layer 102 ', forms nano patterned substrate 101 '.Can remove by the method for cmp or etching described patterned mask layer 102 '.Finish patterned Sapphire Substrate and can enter follow-up expitaxial growth technology.
In sum, the invention provides a kind of manufacture method of nano patterned substrate, the manufacture method of described nano patterned substrate heats up to metal nanoparticle by laser, make the temperature of metal nanoparticle reach the fusing point of mask layer, thereby the mask layer that fusing contacts with metal nanoparticle, reach the purpose of pattern mask layer, and then utilize the mask layer patterned substrate.The method need not be used high-precision photoetching equipment, also impresses without mould, and it is simple to have technique, the advantage that process costs is low.
Obviously, those skilled in the art can carry out various changes and modification to the present invention and not break away from the spirit and scope of the present invention.Like this, if of the present invention these are revised and modification belongs within the scope of claim of the present invention and equivalent technologies thereof, then the present invention also is intended to comprise these changes and modification interior.
Claims (12)
1. the manufacture method of a nano patterned substrate comprises:
Substrate is provided, forms mask layer at described substrate;
Spin coating or sprinkling metal nanoparticle on described mask layer, the specific heat capacity of described mask layer is greater than the specific heat capacity of described metal nanoparticle, and the fusing point of described metal nanoparticle is greater than the fusing point of described mask layer;
Utilize the described metal nanoparticle of Ear Mucosa Treated by He Ne Laser Irradiation, make the temperature of described metal nanoparticle reach the fusing point of described mask layer, to form patterned mask layer;
Remove described metal nanoparticle;
With described patterned mask layer as the described substrate of mask etching;
Remove described patterned mask layer, form nano patterned substrate.
2. the manufacture method of nano patterned substrate as claimed in claim 1 is characterized in that: the specific heat capacity of described mask layer is four times of specific heat capacity of described metal nanoparticle at least.
3. the manufacture method of nano patterned substrate as claimed in claim 1, it is characterized in that: the fusing point of described metal nanoparticle is higher at least 500 ℃ than the fusing point of described mask layer.
4. the manufacture method of nano patterned substrate as claimed in claim 3, it is characterized in that: the material of described metal nanoparticle is Ag or Au.
5. the manufacture method of nano patterned substrate as claimed in claim 1, it is characterized in that: the material of described mask layer is polymer.
6. the manufacture method of nano patterned substrate as claimed in claim 5, it is characterized in that: the fusing point of described mask layer is less than 1000 ℃.
7. the manufacture method of nano patterned substrate as claimed in claim 6, it is characterized in that: the thickness of described mask layer is 10nm ~ 1000nm.
8. the manufacture method of nano patterned substrate as claimed in claim 1, it is characterized in that: described metal nanoparticle is the metal nano ball.
9. the manufacture method of nano patterned substrate as claimed in claim 8, it is characterized in that: the diameter of described metal nano ball is greater than the thickness of described mask layer.
10. the manufacture method of nano patterned substrate as claimed in claim 1 is characterized in that: utilize the method for etching to remove described metal nanoparticle.
11. the manufacture method of nano patterned substrate as claimed in claim 1 is characterized in that: the consistent wavelength of the wavelength of described laser and the plasma resonance of described metal nanoparticle.
12. the manufacture method of nano patterned substrate as claimed in claim 1 is characterized in that: utilize the method for cmp or etching to remove described mask layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210533172.6A CN102983235B (en) | 2012-12-11 | 2012-12-11 | Manufacturing method of nanoscale patterned substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210533172.6A CN102983235B (en) | 2012-12-11 | 2012-12-11 | Manufacturing method of nanoscale patterned substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102983235A true CN102983235A (en) | 2013-03-20 |
| CN102983235B CN102983235B (en) | 2015-04-01 |
Family
ID=47857089
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210533172.6A Active CN102983235B (en) | 2012-12-11 | 2012-12-11 | Manufacturing method of nanoscale patterned substrate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102983235B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104241465A (en) * | 2014-09-22 | 2014-12-24 | 山东浪潮华光光电子股份有限公司 | Nano coarsening composite graphical sapphire substrate and manufacturing method |
| CN106206898A (en) * | 2016-09-08 | 2016-12-07 | 厦门市三安光电科技有限公司 | A kind of manufacture method of light emitting diode |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070166862A1 (en) * | 2005-12-15 | 2007-07-19 | Lg Electronics Inc. | Method for fabricating substrate with nano structures, light emitting device and manufacturing method thereof |
| CN101373714A (en) * | 2007-08-22 | 2009-02-25 | 中国科学院半导体研究所 | Method for preparing nano-scale pattern substrate for nitride epitaxial growth |
| CN102063013A (en) * | 2009-11-16 | 2011-05-18 | 国立中央大学 | Method for manufacturing patterning substrate by nano-microspheres |
-
2012
- 2012-12-11 CN CN201210533172.6A patent/CN102983235B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070166862A1 (en) * | 2005-12-15 | 2007-07-19 | Lg Electronics Inc. | Method for fabricating substrate with nano structures, light emitting device and manufacturing method thereof |
| CN101373714A (en) * | 2007-08-22 | 2009-02-25 | 中国科学院半导体研究所 | Method for preparing nano-scale pattern substrate for nitride epitaxial growth |
| CN102063013A (en) * | 2009-11-16 | 2011-05-18 | 国立中央大学 | Method for manufacturing patterning substrate by nano-microspheres |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104241465A (en) * | 2014-09-22 | 2014-12-24 | 山东浪潮华光光电子股份有限公司 | Nano coarsening composite graphical sapphire substrate and manufacturing method |
| CN106206898A (en) * | 2016-09-08 | 2016-12-07 | 厦门市三安光电科技有限公司 | A kind of manufacture method of light emitting diode |
| CN106206898B (en) * | 2016-09-08 | 2018-07-06 | 厦门市三安光电科技有限公司 | A kind of production method of light emitting diode |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102983235B (en) | 2015-04-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7709282B2 (en) | Method for producing a light emitting device | |
| KR101485889B1 (en) | Lens with broadband anti-reflective structures formed by nano islands mask and method of making the same | |
| CN103066178B (en) | A kind of upside-down mounting photonic crystal LED chip and manufacture method thereof | |
| CN101823690B (en) | Manufacturing method of SU-8 nano fluid system | |
| CN103794688B (en) | A kind of preparation method of GaN-based LED with photonic crystal structure | |
| CN103149607B (en) | A kind of fabricating method of microlens array be shaped based on template electric induction | |
| US20110263108A1 (en) | Method of fabricating semiconductor quantum dots | |
| CN103066170B (en) | A kind of manufacture method of nano patterned substrate | |
| Khokhar et al. | Nanofabrication of gallium nitride photonic crystal light-emitting diodes | |
| CN103863999B (en) | A kind of preparation method of metal Nano structure | |
| CN102983235B (en) | Manufacturing method of nanoscale patterned substrate | |
| CN102253435A (en) | Micromachining method for manufacturing polymer cylindrical microlens by electric field induction | |
| US20120208307A1 (en) | Manufacturing method of high-efficiency led | |
| CN103022281B (en) | A kind of manufacture method of nano patterned substrate | |
| KR100957570B1 (en) | Method For Fabricating Substrate For High Efficiency Light Emitting Diode | |
| CN103035788A (en) | Manufacturing method for nanometer-scale imaging substrate | |
| Tang et al. | Micro–Nanostructure‐Assisted Luminescence in Perovskite Devices | |
| KR100875988B1 (en) | Method for patterning p type semiconductor layer in light emitting diode | |
| CN102945900B (en) | Manufacturing method of nano-scale imaged substrate | |
| CN109192836B (en) | Preparation method of LED structure with graded-refractive-index nano structure combined with nano lens | |
| CN108091552B (en) | Method for preparing micro-nano structure pattern on light-transmitting substrate | |
| KR20090116212A (en) | Method for fabricating sapphire substrate of high efficiency light emitting diode | |
| CN104241455A (en) | Led chip and manufacturing method thereof | |
| Lee et al. | Improving the light-emitting efficiency of GaN LEDs using nanoimprint lithography | |
| KR101299359B1 (en) | 2D Photonic crystal structure having improved light extraction efficiency and Method of manufacturing the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20180625 Address after: 201306 N1128 room 23, 2 New Town Road, mud town, Pudong New Area, Shanghai Patentee after: Gallium semiconductor technology (Shanghai) Co., Ltd. Address before: 201306 1889 Hong Yin Road, Lingang industrial area, Pudong New Area, Shanghai Patentee before: EnRay Tek Optoelectronics (Shanghai) Co., Ltd. |