CN101373714A - Method for preparing nano-scale pattern substrate for nitride epitaxial growth - Google Patents
Method for preparing nano-scale pattern substrate for nitride epitaxial growth Download PDFInfo
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Abstract
The invention relates to the semiconductor technical field and discloses a method for manufacturing a nanometer pattern substrate used for the epitaxial growth of a nitride. The method comprises the followings steps: settling a layer of silicon dioxide or silicon nitride film on a substrate used for the epitaxial growth of the nitride; the silicon dioxide or silicon nitride film is coated with a layer of thin metal layer through vapor deposition; conducting the annealing heat treatment, and forming uniformly distributed nano-scaled metal particles; utilizing the formed nano-scaled metal particles as masks to etch the silicon dioxide or silicon nitride film so as to form a nanometer pattern structure; using the silicon dioxide or silicon nitride film with the nanometer pattern structure as a mask etching substrate to transfer the nanometer pattern structure of the substrate; and etching to remove the silicon dioxide or silicon nitride film, cleaning the substrate, and obtaining the nanometer pattern substrate. The invention can reduce the dislocation density in the epitaxial layer of the nitride, improve the crystal quality of epitaxial materials, improve the performance of devices and help to realize the scaled and large area manufacture.
Description
Technical field
The present invention relates to technical field of semiconductors, relate in particular to a kind of manufacture method that is used for the nano-scale pattern substrate of nitride epitaxial growth.
Background technology
With III-V family gallium nitride (GaN) is the broad stopband nitride compound semiconductor of representative, at UV/blue/green light LED, laser, sunlight blind UV electric explorer, and all many-sides such as high frequency, high temperature high power electronic device have important and use widely.The main heteroepitaxial growth of nitride is on sapphire, silicon, carborundum, zinc oxide, gallium arsenide substrate, or isoepitaxial growth is on the self-standing gan substrate.
Except that the self-standing gan substrate, there are very macrolattice constant mismatch and thermal expansion coefficient difference between other substrates and nitride.Therefore, utilize in the nitride epitaxial layer of metal organic chemical vapor deposition (MOCVD), hydride gas-phase epitaxy (HVPE) or molecular beam epitaxy (MBE) homepitaxy technology growth, there are very big stress and a lot of crystal defect such as dislocation etc., therefore the crystal mass of material is subjected to very big influence, so deterioration device performance.And adopt the patterned substrate technology can alleviate the stress that causes owing to lattice mismatch in substrate and the nitride epitaxial layer heteroepitaxial growth, and make it to obtain effective relaxation, avoid the generation of crackle.Simultaneously, also can reduce the dislocation density in the epitaxially grown nitride material greatly, crystal mass is greatly improved.
But the patterned substrate of preparation is to adopt traditional photoetching process preparation mostly at present.Owing to be subjected to condition restriction such as equipment precision, the figure yardstick that conventional lithographic techniques is made is many between micron dimension 2-10 μ m.Compare with common micron order graph substrate, the stress that nano patterned substrate technology can more effective relaxation heterojunction boundary growth course further reduces the dislocation density in the nitride epitaxial layer, improves the crystal mass and the corresponding devices performance of material.
Electron beam lithography or X-ray lithography technology are then adopted in the realization of the figure of semiconductor nano level usually, but these photoetching techniques all relate to expensive equipment, complicated technical process and higher cost, and can not large tracts of land, scale makes.Therefore, development is low-cost, is easy to realize the nano patterned substrate technology of scale and large-area manufacturing, can more effectively be applied to nitride epitaxial growth, is the technical problem of being badly in need of solution at present.
Summary of the invention
(1) technical problem that will solve
In view of this; main purpose of the present invention is to provide a kind of manufacture method that is used for the nano-scale pattern substrate of nitride epitaxial growth; to reduce the dislocation density in the nitride epitaxial layer; avoid the generation of crackle; improve the crystal mass and the uniformity of epitaxial material; and then improve the performance of device, and reduce cost of manufacture, help realizing scale and large-area manufacturing.
(2) technical scheme
In order to achieve the above object, technical scheme of the present invention is achieved in that
A kind of manufacture method that is used for the nano-scale pattern substrate of nitride epitaxial growth, this method may further comprise the steps:
A, be used for deposit layer of silicon dioxide or silicon nitride film on the substrate of nitride epitaxial growth;
B, on described silicon dioxide or silicon nitride film evaporation layer of metal thin layer;
C, annealing heat treatment form the metallic particles of equally distributed nanoscale on the surface;
The metallic particles of the nanoscale that D, utilization form is as mask, and described silicon dioxide of etching or silicon nitride film form the nano graph structure;
E, be the mask etching substrate, the nano graph structure is transferred on the substrate with described silicon dioxide or silicon nitride film with nano graph structure;
Described silicon dioxide or silicon nitride film are removed in F, corrosion, clean substrate, obtain the nano-scale pattern substrate.
In the such scheme, the described substrate that is used for nitride epitaxial growth is sapphire, silicon, carborundum, GaAs, zinc oxide or self-standing gan.
In the such scheme, the thickness of silicon dioxide described in the steps A or silicon nitride film is 50nm to 5 μ m.
In the such scheme, thin metal layer described in the step B is nickel, titanium Ti, aluminium Al or golden Au, and the thickness of described thin metal layer is 2nm to 50nm.
In the such scheme, annealing conditions described in the step C is: the N that flows
2Atmosphere, temperature 500 to 1100 degree, 30 seconds to 30 minutes time.
In the such scheme, etching described in the step D is to adopt reactive ion RIE or inductive couple plasma ICP equipment to carry out dry etching, and the yardstick of the described nano graph structure of formation is between 10nm to 1000nm.
In the such scheme, adopt reactive ion RIE or inductive couple plasma ICP equipment to carry out dry etching during etched substrate described in the step e.
In the such scheme, corrosion described in the step F is to adopt diluted hydrofluoric acid HF or hot phosphoric acid to carry out wet etching.
In the such scheme, the growing method that adopts during described nitride epitaxial growth is any one among metal organic chemical vapor deposition MOCVD, hydride gas-phase epitaxy HVPE or the molecular beam epitaxy MBE, or any two or three combination, described nitride epitaxial layer is any one among GaN, AlN, InN, AlGaN, InGaN, InAlN or the AlGaInN, or by any multiple layer structural material that combines.
(3) beneficial effect
From technique scheme as can be seen, the present invention has following beneficial effect:
1, this manufacture method that is used for the nano-scale pattern substrate of nitride epitaxial growth provided by the invention, be mask by the metallic particles that utilizes nanoscale, utilize RIE or ICP dry etching equipment, prepare the silicon dioxide or the silicon nitride film of nano graph structure, and then be mask with the silicon dioxide or the silicon nitride film of nano graph structure, utilize RIE or ICP dry etching equipment that the nano graph structure is transferred on the substrate.
This nano-scale pattern substrate can be used for the heteroepitaxial growth of nitride.Adopt nano patterned substrate technology can alleviate the stress that causes owing to lattice mismatch in the heteroepitaxial growth process between substrate and nitride, reduce the dislocation density in the nitride epitaxial layer, avoid the generation of crackle, improve the crystal mass and the uniformity of epitaxial material, and then improve the performance of device.
2, this manufacture method that is used for the nano-scale pattern substrate of nitride epitaxial growth provided by the invention does not relate to expensive lithographic equipment, and it is low to reduce cost of manufacture, helps realizing scale and large-area manufacturing.
Description of drawings
Fig. 1 is used for the method flow diagram of the nano-scale pattern substrate of nitride epitaxial growth for making provided by the invention;
The generalized section of Fig. 2 after for deposit silicon dioxide or silicon nitride film and evaporation metal thin layer on the substrate that is used for nitride epitaxial provided by the invention; Wherein 1 is substrate, the 2nd, and silicon dioxide or silicon nitride, the 3rd, metal level;
Fig. 3 is the generalized section behind the nano level metal particle that forms of high annealing provided by the invention;
Fig. 4 is mask for the nano level metal particle that utilizes provided by the invention, the generalized section behind ICP or RIE dry etching silicon dioxide or the silicon nitride film;
Fig. 5 is mask for nano patterned silicon dioxide or the silicon nitride film of utilizing provided by the invention, the generalized section behind ICP or the RIE dry etching substrate;
Fig. 6 is diluted hydrofluoric acid provided by the invention (HF) or hot phosphoric acid (H
3PO
4) wet etching removes silicon dioxide or silicon nitride film, and substrate is cleaned up, be prepared into the generalized section of nano-scale pattern substrate.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
As shown in Figure 1, Fig. 1 is the method flow diagram that making provided by the invention is used for the nano-scale pattern substrate of nitride epitaxial growth, and this method may further comprise the steps:
Step 101: be used for deposit layer of silicon dioxide or silicon nitride film on the substrate of nitride epitaxial growth;
In this step, the described substrate that is used for nitride epitaxial growth is sapphire, silicon, carborundum, GaAs, zinc oxide or self-standing gan etc., and the thickness of described silicon dioxide or silicon nitride film is 50nm to 5 μ m.
Step 102: evaporation layer of metal thin layer on described silicon dioxide or silicon nitride film;
In this step, described thin metal layer is nickel, titanium Ti, aluminium Al or golden Au, and the thickness of described thin metal layer is 2nm to 50nm.
Step 103: annealing heat treatment forms the metallic particles of equally distributed nanoscale on the surface;
In this step, described annealing conditions is: the N that flows
2Atmosphere, temperature 500 to 1100 degree, 30 seconds to 30 minutes time.
Step 104: the metallic particles that utilizes the nanoscale that forms is as mask, and described silicon dioxide of etching or silicon nitride film form the nano graph structure;
In this step, described etching is to adopt reactive ion RIE or inductive couple plasma ICP equipment to carry out dry etching, and the yardstick of the described nano graph structure of formation is between 10nm to 1000nm.
Step 105: with described silicon dioxide or silicon nitride film with nano graph structure is the mask etching substrate, and the nano graph structure is transferred on the substrate;
In this step, adopt reactive ion RIE or inductive couple plasma ICP equipment to carry out dry etching during described etched substrate.
Step 106: described silicon dioxide or silicon nitride film are removed in corrosion, clean substrate, obtain the nano-scale pattern substrate;
In this step, described corrosion is to adopt diluted hydrofluoric acid HF or hot phosphoric acid to carry out wet etching.
Described making is used for the method flow diagram of the nano-scale pattern substrate of nitride epitaxial growth based on Fig. 1, below in conjunction with specific embodiment the method that the present invention makes the nano-scale pattern substrate that is used for nitride epitaxial growth is further described.
Present embodiment is a kind of manufacture method that is used for the nano-scale pattern Sapphire Substrate of nitride epitaxial growth.Sapphire Substrate is one of the most frequently used backing material of present epitaxial growth nitride.
At first using plasma strengthens the form sediment silica membrane of 0.5 micron of (PECVD) deposition techniques of chemical gaseous phase on 2 inches Sapphire Substrate, utilizes the nickel thin metal layer of electron beam evaporation method evaporation one deck 15nm then, and structural profile as shown in Figure 2;
Then at mobile N
2Down, temperature 850 degree were annealed 5 minutes down, made it the nickel metallic particles that the surface forms nanoscale, and structural profile as shown in Figure 3;
The nickel metallic particles that utilizes nanoscale again adopts RIE or ICP plasma etching equipment dry etching silicon dioxide film as mask, makes it to form the nano graph structure, and the yardstick of figure is about 50-150nm, and structural profile as shown in Figure 4;
Silicon dioxide or silicon nitride film with the nano graph structure is mask then, utilizes RIE or ICP equipment dry etching that the nano graph structure is transferred to substrate, and structural profile as shown in Figure 5.
Utilize diluted hydrofluoric acid (HF) that the silicon dioxide film wet etching is removed at last, promptly can be made into the Sapphire Substrate with graphics of nanometer dimension, structural profile as shown in Figure 6.This nano-scale pattern Sapphire Substrate can be used for the epitaxial growth of low-dislocation-density, high-crystal quality nitride.
Present embodiment is a kind of manufacture method that is used for nano patterned Si (111) substrate of nitride epitaxial growth.Si (111) substrate is one of present epitaxial growth nitride backing material commonly used.
At first adopt the silicon nitride film of 0.5 micron of PECVD deposition techniques and titanium (Ti) thin metal layer of beam methods evaporation one deck 15nm at Si (111) substrate, structural profile as shown in Figure 2;
Then at mobile N
2950 degree were annealed 20 minutes down down, formed titanium (Ti) metallic particles of nanoscale, and structural profile as shown in Figure 3;
Utilize Titanium (Ti) particle from nanoscale as mask again, adopt RIE or ICP equipment dry etching silicon nitride film, make it to form the nano graph structure, the figure yardstick is about 100～300nm, and structural profile as shown in Figure 4;
Silicon nitride film with the nano graph structure is a mask then, adopts RIE or ICP equipment dry etching that the nano graph structure is transferred to Si (111) substrate, and structural profile as shown in Figure 5.
Utilize 160 ℃ of hot phosphoric acid (H at last
3PO
4) the silicon nitride film wet etching is removed, can be prepared into Si (111) substrate with graphics of nanometer dimension, structural profile schematic diagram such as Fig. 6 just clean up.The Si of this graphics of nanometer dimension (111) substrate can be used for growing high-crystal quality, do not have the epitaxial material of the nitride that be full of cracks produces.
The foregoing description utilizes the nickel metal of nanoscale or titanium particle to be mask, utilize RIE or ICP dry etching equipment to prepare the silicon dioxide or the silicon nitride film of nano graph structure, and then be mask with the silicon dioxide or the silicon nitride film of nano graph structure, utilize RIE or ICP dry etching equipment that the nano graph structure is transferred on sapphire or Si (111) substrate.This nano-scale pattern sapphire or Si (111) substrate can be used for the heteroepitaxial growth of nitride.Adopt nano patterned substrate technology can alleviate the stress that causes owing to lattice mismatch in the heteroepitaxial growth process between substrate and nitride, reduce the defect concentration of nitride epitaxial layer, improve crystal mass, and then improve the performance of device.This technology does not relate to expensive lithographic equipment, and cost is low, is easy to scale and large-area manufacturing.
In addition, the growing method that adopts during described nitride epitaxial growth is any one in metal organic chemical vapor deposition (MOCVD), hydride gas-phase epitaxy (HVPE) or the molecular beam epitaxy (MBE), or any two or three combination, described nitride epitaxial layer is any one among GaN, AlN, InN, AlGaN, InGaN, InAlN or the AlGaInN, or by any multiple layer structural material that combines.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (9)
1. manufacture method that is used for the nano-scale pattern substrate of nitride epitaxial growth is characterized in that this method may further comprise the steps:
A, be used for deposit layer of silicon dioxide or silicon nitride film on the substrate of nitride epitaxial growth;
B, on described silicon dioxide or silicon nitride film evaporation layer of metal thin layer;
C, annealing heat treatment form the metallic particles of equally distributed nanoscale on the surface;
The metallic particles of the nanoscale that D, utilization form is as mask, and described silicon dioxide of etching or silicon nitride film form the nano graph structure;
E, be the mask etching substrate, the nano graph structure is transferred on the substrate with described silicon dioxide or silicon nitride film with nano graph structure;
Described silicon dioxide or silicon nitride film are removed in F, corrosion, clean substrate, obtain the nano-scale pattern substrate.
2. the manufacture method that is used for the nano-scale pattern substrate of nitride epitaxial growth according to claim 1 is characterized in that, the described substrate that is used for nitride epitaxial growth is sapphire, silicon, carborundum, GaAs, zinc oxide or self-standing gan.
3. the manufacture method that is used for the nano-scale pattern substrate of nitride epitaxial growth according to claim 1 is characterized in that, the thickness of silicon dioxide described in the steps A or silicon nitride film is 50nm to 5 μ m.
4. the manufacture method that is used for the nano-scale pattern substrate of nitride epitaxial growth according to claim 1 is characterized in that, thin metal layer described in the step B is nickel, titanium Ti, aluminium Al or golden Au, and the thickness of described thin metal layer is 2nm to 50nm.
5. the manufacture method that is used for the nano-scale pattern substrate of nitride epitaxial growth according to claim 1 is characterized in that annealing conditions described in the step C is: the N that flows
2Atmosphere, temperature 500 to 1100 degree, 30 seconds to 30 minutes time.
6. the manufacture method that is used for the nano-scale pattern substrate of nitride epitaxial growth according to claim 1, it is characterized in that, etching described in the step D is to adopt reactive ion RIE or inductive couple plasma ICP equipment to carry out dry etching, and the yardstick of the described nano graph structure of formation is between 10nm to 1000nm.
7. the manufacture method that is used for the nano-scale pattern substrate of nitride epitaxial growth according to claim 1 is characterized in that, adopts reactive ion RIE or inductive couple plasma ICP equipment to carry out dry etching during etched substrate described in the step e.
8. the manufacture method that is used for the nano-scale pattern substrate of nitride epitaxial growth according to claim 1 is characterized in that, corrosion described in the step F is to adopt diluted hydrofluoric acid HF or hot phosphoric acid to carry out wet etching.
9. the manufacture method that is used for the nano-scale pattern substrate of nitride epitaxial growth according to claim 1, it is characterized in that, the growing method that adopts during described nitride epitaxial growth is any one among metal organic chemical vapor deposition MOCVD, hydride gas-phase epitaxy HVPE or the molecular beam epitaxy MBE, or any two or three combination, described nitride epitaxial layer is any one among GaN, AlN, InN, AlGaN, InGaN, InAlN or the AlGaInN, or by any multiple layer structural material that combines.
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