CN106298450A - A kind of nano patterned Sapphire Substrate and its preparation method and application - Google Patents
A kind of nano patterned Sapphire Substrate and its preparation method and application Download PDFInfo
- Publication number
- CN106298450A CN106298450A CN201610651489.8A CN201610651489A CN106298450A CN 106298450 A CN106298450 A CN 106298450A CN 201610651489 A CN201610651489 A CN 201610651489A CN 106298450 A CN106298450 A CN 106298450A
- Authority
- CN
- China
- Prior art keywords
- sapphire substrate
- silicon dioxide
- etching
- nano
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 50
- 239000010980 sapphire Substances 0.000 title claims abstract description 49
- 229910052594 sapphire Inorganic materials 0.000 title claims abstract description 49
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 80
- 238000000034 method Methods 0.000 claims abstract description 44
- 229910052751 metal Inorganic materials 0.000 claims abstract description 40
- 239000002184 metal Substances 0.000 claims abstract description 40
- 239000010410 layer Substances 0.000 claims abstract description 39
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 39
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 23
- 238000005530 etching Methods 0.000 claims abstract description 17
- 238000001338 self-assembly Methods 0.000 claims abstract description 14
- 229920000642 polymer Polymers 0.000 claims abstract description 12
- 239000011807 nanoball Substances 0.000 claims abstract description 10
- 239000002356 single layer Substances 0.000 claims abstract description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 12
- 229910052737 gold Inorganic materials 0.000 claims description 12
- 239000010931 gold Substances 0.000 claims description 12
- 238000001312 dry etching Methods 0.000 claims description 6
- 238000001704 evaporation Methods 0.000 claims description 6
- 238000001039 wet etching Methods 0.000 claims description 6
- 230000008020 evaporation Effects 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- 239000004793 Polystyrene Substances 0.000 claims description 4
- 239000002253 acid Substances 0.000 claims description 4
- 239000011805 ball Substances 0.000 claims description 4
- 230000008878 coupling Effects 0.000 claims description 4
- 238000010168 coupling process Methods 0.000 claims description 4
- 238000005859 coupling reaction Methods 0.000 claims description 4
- 230000003628 erosive effect Effects 0.000 claims description 4
- 238000001020 plasma etching Methods 0.000 claims description 4
- 229920002223 polystyrene Polymers 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 239000002904 solvent Substances 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 240000007594 Oryza sativa Species 0.000 claims description 2
- 235000007164 Oryza sativa Nutrition 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 239000011651 chromium Substances 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims description 2
- 235000009566 rice Nutrition 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 238000003786 synthesis reaction Methods 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims 1
- 235000013870 dimethyl polysiloxane Nutrition 0.000 claims 1
- 229910052731 fluorine Inorganic materials 0.000 claims 1
- 239000011737 fluorine Substances 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims 1
- 239000004926 polymethyl methacrylate Substances 0.000 claims 1
- 238000000605 extraction Methods 0.000 abstract description 8
- 229910002601 GaN Inorganic materials 0.000 description 15
- 238000000137 annealing Methods 0.000 description 9
- 239000004005 microsphere Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 239000002077 nanosphere Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 238000004033 diameter control Methods 0.000 description 2
- -1 due to low price Substances 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000004049 embossing Methods 0.000 description 2
- 238000001534 heteroepitaxy Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910015844 BCl3 Inorganic materials 0.000 description 1
- 241000790917 Dioxys <bee> Species 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000004205 dimethyl polysiloxane Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000004702 methyl esters Chemical class 0.000 description 1
- 239000011806 microball Substances 0.000 description 1
- 239000002061 nanopillar Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- VDGJOQCBCPGFFD-UHFFFAOYSA-N oxygen(2-) silicon(4+) titanium(4+) Chemical compound [Si+4].[O-2].[O-2].[Ti+4] VDGJOQCBCPGFFD-UHFFFAOYSA-N 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
Abstract
The invention discloses a kind of nano patterned Sapphire Substrate and preparation method thereof, 1) growth layer of silicon dioxide layer on a sapphire substrate；2) on silicon dioxide layer, it is self-assembly of monolayer compact arranged polymer microballoon array；3) layer of metal layer is grown in polymer microballoon array surface；4) successively anneal under 750 DEG C and 1050 DEG C of high temperature, obtain the metal nano ball array of not close arrangement；5) arrange with metal nano spherical array and for mask, silicon dioxide layer is performed etching, obtain regularly arranged silica nanometer post；6) for mask, Sapphire Substrate is performed etching with silica nanometer post, remove silica nanometer post, finally give described nano patterned Sapphire Substrate (PSS).Present invention process is simple, good stability, yield rate are high, is suitable to prepare the graphical sapphire substrate of various wafer size；The nano patterned Sapphire Substrate obtained has higher light extraction efficiency, is significant the luminous efficiency improving GaN base LED.
Description
Technical field
The invention belongs to GaN base LED patterned substrate technical field, relate to a kind of preparation based on self assembly metallic microspheres and receive
The method of meter level graphical sapphire substrate, is specifically related to utilize the polymer microballoon being self-assembly of on silicon dioxide layer surface
Prepare regularly arranged metallic microspheres array, then obtain regularly arranged silica nanometer post by etching and carve further
Erosion obtains nano level graphical sapphire substrate.
Background technology
GaN base LED has the advantages such as volume is little, life-span length, efficiency height, energy-conserving and environment-protective compared with traditional light source, at present
It is widely used to display, display lamp, backlight, solid-state illumination, traffic light, Geodesic Optics communication and biosensor etc.
Every field.Owing to lacking large-sized GaN substrate, current GaN film is usually on the substrates such as sapphire, carborundum or silicon
Grown by hetero-epitaxy mode.Sapphire, due to low price, chemical stability and good thermal stability, is current business
The substrate that industry GaN base LED is the most frequently used.But, the lattice mismatch between GaN epitaxial layer and sapphire reaches 16% so that
GaN film produces substantial amounts of dislocation during hetero-epitaxy, and crystal mass is poor.Simultaneously big between GaN epitaxial layer and air
Refractivity make the light produced in LED active area due to total reflection effect major part cannot outgoing, only have the light of about 5%
Can penetrate from escape angle, the two factor significantly limit the light extraction efficiency of GaN base LED.
Graphical sapphire substrate (PSS) on the one hand can effectively reduce the dislocation density of GaN epitaxially deposited layer, improves thin
The crystal mass of film；On the other hand can change the direction of propagation of LED component interior lights, make most total reflection light again enter
Enter to escape angle thus significantly improve light extraction efficiency (Z.T.Lin et al., the Pattern design of and of LED
epitaxial growth on patterned sapphire substrates for highly efficient GaN-
based LEDs,Cryst.Growth Des.,12:2836(2012)；G.F.Yang et al.,Investigation of
light output performance for gallium nitride-based light-emitting diodes
grown on different shapes of patterned sapphire substrate,Materials Science
in Semiconductor Processing 33:149(2015)).At present, the commonly used PSS of business-like LED improves device
Part performance, compared with conventional planar Sapphire Substrate, uses the LED light extraction efficiency of PSS can improve 30%～40%.
Current business-like PSS, its feature size is generally in micron-scale magnitude.But numerous studies show, with micron
The PSS of size compares, and the PSS of nano-scale can improve light extraction efficiency (J.J.Chen, the and of LED component further
Y.K.Su,Enhanced output power of GaN-based LEDs with nano-patterned sapphire
substrates,IEEE Photon.Tech.Lett.,20:1193(2008)；Y.K.Su et al.,Pattern-size
dependence of characteristics of nitride-based LEDs grown on patterned
sapphire substrates,J.Cryst.Growth,311:2973(2009)).Therefore, it is achieved the PSS of nano-scale magnitude
The performance improving GaN base LED further is had great importance.
Present stage is usually and uses nanometer embossing to realize the graphical sapphire substrate of nano-scale, but nanometer pressure
Print technology is the most ripe, and the preparation technology of nano-imprinting method is relatively complicated, relates to preparation and the impressing of impression block
The transfer etc. of figure.Use the inventive method to prepare nano-scale PSS and the most only effectively simplify technological process, improve product
Yield, reduce production cost, and by changing the thickness of metal level, the size of nano graph effectively can be controlled
System.
Summary of the invention
The invention provides a kind of method preparing nano patterned Sapphire Substrate based on self assembly metallic microspheres, mesh
Be the crystal mass improving GaN epitaxial film further, and improve the light extraction efficiency of LED.Described method passes through self assembly
The polymer microballoon formed is derived from the metal nano ball array assembling not close arrangement, and arranges as covering with metal nano spherical array
Mould etching obtains regularly arranged silica nanometer post, then carves Sapphire Substrate with silica nanometer post for mask
Lose thus obtain the described nano patterned Sapphire Substrate (PSS) prepared based on self assembly metallic microspheres.Nano level PSS
More business-like micron order PSS has higher light extraction efficiency.The preparation method of the present invention is simple, reproducible, one-tenth
Product rate is high；Meanwhile, the present invention is applicable to the preparation of the graphical sapphire substrate of various wafer size, and production cost is low, especially
It is suitable for enterprise to produce in enormous quantities.
To achieve these goals, the present invention is by the following technical solutions:
1) the plain film Sapphire Substrate of a clean surface is chosen, in its surface evaporation or the two of sputtering one floor height compactness
Silicon oxide layer；
2) use self-assembling method in step 1) in silicon dioxide layer surface synthesis the compact arranged polymer of monolayer micro-
Ball array；
3) in step 2) in polymer microballoon array surface growth layer of metal layer；
4) by step 3) in the structure of long good metal level successively put in Muffle furnace respectively, and successively respectively less than metal
The layer temperature (such as 750 DEG C) of fusing point and annealing at the temperature (such as 1050 DEG C) of metal level fusing point, can be in titanium dioxide
Silicon surface obtains the metal nano ball array of regular not close arrangement；
5) with step 4) in metal nano spherical array be classified as mask silicon dioxide layer performed etching, then remove metal and receive
Rice ball array, obtains regularly arranged silica nanometer post；
6) with step 5) in silica nanometer post be that plain film Sapphire Substrate is performed etching by mask, then remove two
Silicon oxide nano-pillar, finally obtains nano patterned Sapphire Substrate (PSS).
In such scheme, described step 1) in, Sapphire Substrate can be arbitrary dimension size, including 2 inches, 4 inches,
6 inches and more large scale.
In such scheme, described step 1) in, the silicon dioxide of high compactness can use thermal evaporation, electron beam evaporation or
Prepared by the methods such as magnetron sputtering.
In such scheme, described step 1) in, the thickness of silicon dioxide layer is 200 nanometers～300 nanometers.
In such scheme, described step 2) in, self-assembling method includes that solvent replaces self-assembly method, gas-liquid interface method, steaming
From construction from part and LBL self-assembly method etc..
In such scheme, described step 2) in, polymer is polystyrene, polydimethylsiloxane and polymethylacrylic acid
Methyl ester etc..
In such scheme, described step 3) in, metal level is gold, silver, nickel, aluminum, titanium, chromium, copper, or its alloy, described " raw
Long layer of metal layer " method evaporation (such as electron beam evaporation) or the sputtering method such as (such as magnetron sputtering) can be used to prepare.
In such scheme, described step 3) in, the thickness of described metal level is 20 nanometers～500 nanometers.
In such scheme, described step 4) in, the described temperature range less than metal level fusing point is 400 DEG C～800 DEG C, excellent
Selection of land is 750 DEG C, and the time of annealing is 50 minutes～200 minutes, it is therefore preferable to 100 minutes；Described close to metal level fusing point
Temperature range is 650 DEG C～1900 DEG C, it is therefore preferable to 1050 DEG C, and the time of annealing is 50 minutes～200 minutes, it is therefore preferable to
100 minutes, specifically according to the metal species chosen, it can be adjusted.As, 750 DEG C annealing time be 50 minutes～
200 minutes, it is therefore preferable to 100 minutes, be 50 minutes～200 minutes in the time of 1050 DEG C of annealing, it is therefore preferable to 100 minutes.
In such scheme, described step 4) in, the size range of not close arrangement metal ball is 50 nanometers～1000 nanometers.
In such scheme, described step 5) in, silicon dioxide layer is performed etching wet etching or dry method can be used to carve
Erosion, wherein dry etching includes reactive ion etching (RIE), sense coupling (ICP) and high-density plasma
Body etching (HDP) etc..
In such scheme, described step 5) in, removing metal nano ball array can be carried out with corresponding corrosion of metal liquid
Wet etching.
In such scheme, described step 6) in, Sapphire Substrate is performed etching wet etching or dry method can be used to carve
Erosion, wherein dry etching typically uses sense coupling (ICP).
In such scheme, described step 6) in, remove silica nanometer post and can use Fluohydric acid. (HF) solution or BOE
Solution carries out wet etching.
What the present invention proposed utilizes the method that self-assembly method prepares nano patterned Sapphire Substrate, not by conventional lithography
The restriction of the diffraction of light limit in technique；The on-plane surface warpage that simultaneously it also avoid large-size sapphire substrate in photoetching process is asked
Topic.
A kind of nano patterned Sapphire Substrate (PSS) prepared as stated above that the present invention provides, and adopts
The method obtaining nano patterned Sapphire Substrate with nanometer embossing is compared, and has technique simple, reproducible, finished product
The high advantage of rate, and do not limited by sapphire wafer size.
The invention allows for described nano patterned Sapphire Substrate (nanoscale PSS) in preparation GaN base LED
Application.Can realize metal micro-by conditions such as the thickness of metal level, annealing temperature and annealing times in the described method of change
Ball size and effective control of spacing.The nano patterned Sapphire Substrate ratio using preparation method of the present invention to obtain is common
Micron graphical sapphire substrate has higher light extraction efficiency, and production cost is low, is particularly suitable for the big rule of enterprise
Mould produces, and therefore the luminous efficiency of present invention GaN base LED to improving commercialization further is significant.
Accompanying drawing explanation
Fig. 1 is the schematic diagram after sputtering high compactness silicon dioxide layer in plain film Sapphire Substrate.
Fig. 2 is the schematic diagram after being self-assembly of the compact arranged polymer microballoon of monolayer on silicon dioxide layer.
Fig. 3 is the schematic diagram after evaporating layer of metal layer in polymer microballoon substrate.
Fig. 4 is 750 DEG C of high annealings form not close regularly arranged metal nano ball array schematic diagram after 100 minutes.
Fig. 5 is 1050 DEG C of high annealings schematic diagrams of not close regularly arranged metal nano ball array after 100 minutes.
Fig. 6 is ICP etching silicon dioxide layer the schematic diagram after removing metal nano ball array.
Fig. 7 is the schematic diagram after ICP etches plain film Sapphire Substrate and removes silica nanometer post.
Detailed description of the invention
In conjunction with specific examples below and accompanying drawing, the present invention is described in further detail.Implement the present invention process,
Condition, experimental technique etc., outside the lower content mentioned specially, be universal knowledege and the common knowledge of this area, this
Bright content is not particularly limited.
Embodiment 1
1) as it is shown in figure 1, use the method for magnetron sputtering to grow a floor height in the plain film Sapphire Substrate 11 of 4 inches and cause
The silicon dioxide layer 12 of close property, the thickness of silicon dioxide layer 12 is 300 nanometers；
2) solvent displacement self-assembly method is used to form monolayer on the silicon dioxide layer 12 of structure shown in Fig. 1 compact arranged
Polystyrene microsphere array 21, microsphere diameter controls at 600 ran, as shown in Figure 2；
3) in the substrate being attached with described polystyrene microsphere array 21, method one layer of gold 31 of growth of evaporation is used,
The thickness of gold 31 is 300 nanometers, it is noted that the space between microsphere also can evaporate golden 31 simultaneously, as shown in Figure 3；
4) structure of good for above-mentioned length gold is put in Muffle furnace, anneal 100 minutes under 750 DEG C of high temperature, can be at dioxy
SiClx layer 12 surface is derived from the gold nanosphere array 41 that the not close of assembling is regularly arranged, as shown in Figure 4；Continue to raise Muffle
The temperature of stove is to 1050 DEG C (close to fusing points of gold) and anneals 100 minutes, obtains the gold of more regular not close arrangement
Nanosphere array 51, the diameter control of gold nanosphere array 51 is at 300 ran, as shown in Figure 5；
5) with gold nanosphere array 51 as mask, at CF3The gaseous environments such as Cl, He carry out ICP to silicon dioxide layer 12
Etching, then removes with gold corrosive liquid gold nanosphere array 51 and cleans, obtain regularly arranged silica nanometer post 61；
6) with silica nanometer post 61 as mask, at BCl3、Cl2Deng in gaseous environment, plain film Sapphire Substrate 11 is entered
Row ICP etches, and then removes silica nanometer post 61 with Fluohydric acid. (HF) solution that concentration is 10%, finally obtains nanoscale
Graphical sapphire substrate (PSS) 71.
The protection content of the present invention is not limited to above example.Under the spirit and scope without departing substantially from inventive concept, this
Skilled person it is conceivable that change and advantage be all included in the present invention, and with appending claims for protect
Protect scope.
Claims (10)
1. the preparation method of a nano patterned Sapphire Substrate, it is characterised in that said method comprising the steps of:
1) Sapphire Substrate is chosen, at its surface evaporation or sputtering one floor height compactness silicon dioxide layer；
2) in step 1) in silicon dioxide layer on use self-assembling method synthesis monolayer compact arranged polymer microballoon array；
3) in step 2) in polymer microballoon array surface growth layer of metal layer；
4) by step 3) in the structure of long good metal level in the temperature less than metal level fusing point and melt close to metal level the most respectively
Anneal at a temperature of Dian, obtain the metal nano ball array of regular not close arrangement on silicon dioxide layer surface；
5) with step 4) in metal nano spherical array be classified as mask silicon dioxide layer performed etching, then remove metal nano ball
Array, obtains regularly arranged silica nanometer post；
6) with step 5) in silica nanometer post be that Sapphire Substrate is performed etching by mask, then remove silicon dioxide receive
Meter Zhu, finally obtains described nano patterned Sapphire Substrate.
Method the most according to claim 1, it is characterised in that step 1) in, the thickness of described silicon dioxide layer is 200 to receive
Rice～300 nanometers.
Method the most according to claim 1, it is characterised in that step 2) in, described self-assembling method includes that solvent is replaced
Self-assembly method, gas-liquid interface method, evaporation self-assembly method and LBL self-assembly method；Described polymer is polystyrene, poly dimethyl
Siloxanes or polymethyl methacrylate.
Method the most according to claim 1, it is characterised in that step 3) in, described metal level be gold, silver, nickel, aluminum, titanium,
Chromium, copper, or its alloy.
Method the most according to claim 1, it is characterised in that step 3) in, the thickness of described metal level be 20 nanometers～
500 nanometers.
Method the most according to claim 1, it is characterised in that step 4) in, the size range of not close arrangement metal ball
It is 50 nanometers～1000 nanometers.
Method the most according to claim 1, it is characterised in that step 5) in, silicon dioxide layer is performed etching include wet
Method etching and dry etching, dry etching can use reactive ion etching, sense coupling and high density etc.
Plasma etching；Removing metal nano ball uses corresponding metal erosion liquid to carry out wet etching.
Method the most according to claim 1, it is characterised in that step 6) in, Sapphire Substrate is performed etching include wet
Method etching and dry etching, dry etching uses sense coupling；Remove silica nanometer post and use hydrogen fluorine
Acid solution carries out wet etching.
9. the nano patterned Sapphire Substrate prepared according to the method described in any one of claim 1～8.
10. the invention allows for nano patterned Sapphire Substrate as claimed in claim 9 in preparation GaN base LED
Application.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610651489.8A CN106298450B (en) | 2016-08-10 | 2016-08-10 | A kind of nano patterned Sapphire Substrate and its preparation method and application |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610651489.8A CN106298450B (en) | 2016-08-10 | 2016-08-10 | A kind of nano patterned Sapphire Substrate and its preparation method and application |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106298450A true CN106298450A (en) | 2017-01-04 |
| CN106298450B CN106298450B (en) | 2019-04-30 |
Family
ID=57667976
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610651489.8A Expired - Fee Related CN106298450B (en) | 2016-08-10 | 2016-08-10 | A kind of nano patterned Sapphire Substrate and its preparation method and application |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106298450B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106784225A (en) * | 2017-01-11 | 2017-05-31 | 华东师范大学 | A kind of method that nano patterned Sapphire Substrate is prepared based on polymer microballoon |
| CN107424912A (en) * | 2017-05-05 | 2017-12-01 | 合肥工业大学 | A kind of preparation method of gallium nitride base nano column array |
| CN107863428A (en) * | 2017-10-26 | 2018-03-30 | 北京中科优唯科技有限公司 | A kind of nano patterned substrate and preparation method thereof |
| CN112086584A (en) * | 2020-09-14 | 2020-12-15 | 南京贝迪电子有限公司 | Composite optical film and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5366140A (en) * | 1993-09-30 | 1994-11-22 | Minnesota Mining And Manufacturing Company | Patterned array of uniform metal microbeads |
| CN101373714A (en) * | 2007-08-22 | 2009-02-25 | 中国科学院半导体研究所 | Method for preparing nano-scale pattern substrate for nitride epitaxial growth |
| CN102116899A (en) * | 2011-03-03 | 2011-07-06 | 华东师范大学 | Alpha-Fe2O3/Si porous photonic crystal and preparation method and application thereof |
| CN102320557A (en) * | 2011-09-08 | 2012-01-18 | 中国科学院研究生院 | Method for preparing metal nanometer particles with hexagonal network in lattice distribution on substrate |
-
2016
- 2016-08-10 CN CN201610651489.8A patent/CN106298450B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5366140A (en) * | 1993-09-30 | 1994-11-22 | Minnesota Mining And Manufacturing Company | Patterned array of uniform metal microbeads |
| CN101373714A (en) * | 2007-08-22 | 2009-02-25 | 中国科学院半导体研究所 | Method for preparing nano-scale pattern substrate for nitride epitaxial growth |
| CN102116899A (en) * | 2011-03-03 | 2011-07-06 | 华东师范大学 | Alpha-Fe2O3/Si porous photonic crystal and preparation method and application thereof |
| CN102320557A (en) * | 2011-09-08 | 2012-01-18 | 中国科学院研究生院 | Method for preparing metal nanometer particles with hexagonal network in lattice distribution on substrate |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106784225A (en) * | 2017-01-11 | 2017-05-31 | 华东师范大学 | A kind of method that nano patterned Sapphire Substrate is prepared based on polymer microballoon |
| CN106784225B (en) * | 2017-01-11 | 2019-03-01 | 华东师范大学 | A method of nano patterned Sapphire Substrate is prepared based on polymer microballoon |
| CN107424912A (en) * | 2017-05-05 | 2017-12-01 | 合肥工业大学 | A kind of preparation method of gallium nitride base nano column array |
| CN107424912B (en) * | 2017-05-05 | 2020-10-20 | 合肥工业大学 | Preparation method of gallium nitride-based nano-pillar array |
| CN107863428A (en) * | 2017-10-26 | 2018-03-30 | 北京中科优唯科技有限公司 | A kind of nano patterned substrate and preparation method thereof |
| CN107863428B (en) * | 2017-10-26 | 2023-09-26 | 山西中科潞安紫外光电科技有限公司 | Nanoscale patterned substrate and manufacturing method thereof |
| CN112086584A (en) * | 2020-09-14 | 2020-12-15 | 南京贝迪电子有限公司 | Composite optical film and preparation method thereof |
| CN112086584B (en) * | 2020-09-14 | 2022-05-24 | 南京贝迪新材料科技股份有限公司 | Composite optical film and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106298450B (en) | 2019-04-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103608937B (en) | Ultra small led and method for manufacturing same | |
| CN106298450B (en) | A kind of nano patterned Sapphire Substrate and its preparation method and application | |
| CN103094434B (en) | ICP etches the method that GaN base Multiple Quantum Well prepares nano-array figure | |
| CN107460542A (en) | A kind of preparation method of the stretchable crystalline semiconductor nano wire based on plane nano line Alignment Design and guiding | |
| CN103374751A (en) | Preparation method of extensional structural body with micro-structure | |
| CN106449902B (en) | The method that nanometer metal structure is prepared near the Quantum Well of light-emitting diode chip for backlight unit | |
| TW200947519A (en) | Method for separating semiconductor and substrate | |
| CN103794688B (en) | A kind of preparation method of GaN-based LED with photonic crystal structure | |
| Zhang et al. | Controllable hydrothermal synthesis of ZnO nanowires arrays on Al-doped ZnO seed layer and patterning of ZnO nanowires arrays via surface modification of substrate | |
| CN101245491B (en) | Method for growing unsupported gallium nitride nanocrystalline on zinc oxide of nano-stick | |
| CN106384763B (en) | Nonpolar InGaN/GaN multiple quantum wells nano-pillar and its preparation method | |
| CN103378236A (en) | Epitaxy structural body with microstructure | |
| CN103377876B (en) | The preparation method of epitaxial structure | |
| US20140306256A1 (en) | Light emitting diode | |
| CN103378247B (en) | Epitaxial structure | |
| CN102760794B (en) | Preparation method of low-stress gallium nitride epitaxial layer | |
| Sun et al. | The morphology evolution of selective area wet etched commercial patterned sapphire substrates | |
| CN101488551A (en) | Production method for GaN based LED | |
| CN104952988B (en) | The preparation method of light emitting diode | |
| CN108520912A (en) | A method of AlN nano graph templates are prepared based on Ni metal self assemblies | |
| CN104952987B (en) | Light emitting diode | |
| CN102683518A (en) | Preparation method for nanopore-shaped patterned sapphire substrate | |
| CN202797054U (en) | Lithium niobate substrate of patterned structure and used for manufacturing LED chip | |
| CN108732652A (en) | A kind of nitride photonic crystal and preparation method thereof | |
| CN104701137B (en) | AlN buffer layers and with the buffer layer chip preparation method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB03 | Change of inventor or designer information | ||
| CB03 | Change of inventor or designer information |
Inventor after: Weng Guoen Inventor after: Chen Shaoqiang Inventor after: Hu Xiaobo Inventor after: Tu Liangliang Inventor after: Wei Mingde Inventor before: Weng Guoen Inventor before: Chen Shaoqiang Inventor before: Hu Xiaobo |
|
| TA01 | Transfer of patent application right | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20170817 Address after: 200062 Putuo District, Zhongshan North Road, No. 3663, Applicant after: EAST CHINA NORMAL University Applicant after: XUZHOU GAPSS OE TECHNOLOGY Co.,Ltd. Address before: 200062 Putuo District, Zhongshan North Road, No. 3663, Applicant before: East China Normal University |
|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP02 | Change in the address of a patent holder |
Address after: 200241 No. 500, Dongchuan Road, Shanghai, Minhang District Co-patentee after: XUZHOU GAPSS OE TECHNOLOGY Co.,Ltd. Patentee after: EAST CHINA NORMAL University Address before: 200062 No. 3663, Putuo District, Shanghai, Zhongshan North Road Co-patentee before: XUZHOU GAPSS OE TECHNOLOGY Co.,Ltd. Patentee before: EAST CHINA NORMAL University |
|
| CP02 | Change in the address of a patent holder | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20190430 |