CN106206350A - The bonding Tachistoscope method and system of optional position on a kind of product wafer - Google Patents
The bonding Tachistoscope method and system of optional position on a kind of product wafer Download PDFInfo
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- CN106206350A CN106206350A CN201610642656.2A CN201610642656A CN106206350A CN 106206350 A CN106206350 A CN 106206350A CN 201610642656 A CN201610642656 A CN 201610642656A CN 106206350 A CN106206350 A CN 106206350A
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- 238000000034 method Methods 0.000 title claims abstract description 48
- 238000005520 cutting process Methods 0.000 claims abstract description 17
- 238000012360 testing method Methods 0.000 claims abstract description 12
- 208000037656 Respiratory Sounds Diseases 0.000 claims description 26
- 238000005259 measurement Methods 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- 230000002085 persistent effect Effects 0.000 claims description 6
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- 235000012431 wafers Nutrition 0.000 description 99
- 239000013078 crystal Substances 0.000 description 10
- 238000003780 insertion Methods 0.000 description 9
- 230000037431 insertion Effects 0.000 description 9
- 238000005336 cracking Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000010998 test method Methods 0.000 description 4
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- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 210000001215 vagina Anatomy 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
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- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The present invention be more particularly directed to the bonding Tachistoscope method and system of optional position on a kind of product wafer.Method comprises the steps: to choose region to be tested on the wafer being bonded；By chip cutting method, region to be tested is intercepted from full wafer wafer；The two wafer joints at the wafer sample edge intercepted form thin seam；At thin seam, insert blade, use infrared light supply irradiate at thin seam and form interference fringe, calculate the bonding degree in region to be tested according to interference fringe.The invention provides a kind of wafer bonding Tachistoscope method and system that can be widely applied to three-dimensional chip product, by the region to be tested of wafer being cut by chip cutting technique, thus realize the bonding degree of wafer optional position is tested, not only having broken in traditional method can only the limitation of test wafer pole marginal position bonding degree, and without introducing new operation, the efficiency of wafer bonding Tachistoscope will not be reduced.
Description
Technical field
The present invention relates to field of semiconductor manufacture, particularly to the bonding Tachistoscope of optional position on a kind of product wafer
Method and system.
Background technology
In three-dimensional chip (3D-IC) technology, such as prepare in the technique of the products such as BSI, UTS, need to enter two wafer
Line unit closes, and whole processing procedure and final products performance are all affected huge by the bonding degree of wafer, so that at bond sequence
Para-linkage degree is estimated afterwards.Prior art generally uses the method inserting blade to the bonding journey at whole crystal round fringes
Degree is estimated, particularly as follows: insert the thin of a known thickness at the crystal round fringes (edge) processed through deburring (trimming)
Blade, the interference fringe situation formed after irradiating according to infrared light supply, the surface energy inserted at blade is calculated in conjunction with formula,
Thereby the bonding situation of crystal round fringes is carried out quantitative evaluation.The crystal round fringes that can be only inserted into through deburring due to blade is apertured
Circumference, thus this method can only be extremely close to the region at edge to wafer, usually the scope away from edge number μm is bonded
The assessment of degree, and cannot the bonding degree to crystal circle center (center) and near other major part regions of center enter
Row assessment.
Summary of the invention
The invention provides the bonding Tachistoscope method and system of optional position on a kind of product wafer, solve above
Technical problem.
The technical scheme is that the bonding degree of optional position on a kind of product wafer
Method of testing, comprises the steps:
Step 1, chooses the region to be tested needing to carry out being bonded Tachistoscope on the wafer being bonded；
Step 2, is cut described region to be tested by the chip cutting method in chip package operation from full wafer wafer
Take off；
Step 3, the two wafer joints at the wafer sample edge intercepted form thin seam；
Step 4, inserts the blade of known thickness at described thin seam, and uses infrared light supply to irradiate formation at described thin seam
Interference fringe, calculates the bonding degree in described region to be tested according to interference fringe.
The invention has the beneficial effects as follows: the invention provides a kind of wafer bonding that can be widely applied to three-dimensional chip product
Tachistoscope method, is cut the region to be tested of wafer by the wafer cutting technique surveyed in operation by chip envelope,
Thus realize the bonding degree of wafer optional position is tested, not only having broken can only limit, test wafer pole in traditional method
The limitation of edge surface of position energy, method of testing is simple, applied widely, and without introducing new operation, will not reduce bonding
The efficiency of Tachistoscope.
On the basis of technique scheme, the present invention can also do following improvement.
Further, in described step 2, use laser or saw sword mode by described region to be tested from full wafer wafer
Intercepting is got off.
Use above-mentioned further scheme to provide the benefit that: in prior art, automatic micro-lobe system can be used
(SELA) mode or intercepted after diamond pen scribing, intercepts region to be detected from full wafer wafer, but this mode
Wafer can come along the particular crystal plane cleavage of silicon, and two panels bonded wafers can cause at incision position and cause because disconnecting along cleavage surface
Extra cracking, the wafer bonding problem originally paid close attention to can be caused the biggest interference, so that cannot judge by this extra cracking
It is that wafer itself is not bonded good also or splitting when intercepting along cleavage surface and is caused.And this further technical scheme uses and swashs
Region to be detected is intercepted from wafer by the chip cutting methods such as light or saw sword, the cracking to wafer of this interception way
Surface damage is low, both can avoid the additional effect brought because of general interception way in cracking facial cleft, again can be real easily
Now to the intercepting of optional position on wafer, thus while ensure that bonding degree efficiency, improve the standard of bonding degree detecting
Really property.
Further, in described step 3, use the wafer sample that hydrofluoric acid treatment intercepts, and the method using etching
The two wafer joints at wafer sample edge after treatment form thin seam.
Above-mentioned further scheme is used to provide the benefit that: in prior art, owing to blade can be only inserted into the crystalline substance through deburring
The apertured circumference of rounded edge, therefore can only carry out being bonded Tachistoscope to having at full wafer crystal round fringes at gap.And originally enter one
Step technical scheme, by the way of etching, can be simply in the two wafer joints formation at the wafer sample edge intercepted
Thin seam, thus insert blade and carry out being bonded Tachistoscope, it is achieved process is simple and applied widely.Meanwhile, this further skill
Art scheme uses Fluohydric acid. to process wafer sample before etching, can remove the oxide-film of wafer specimen surface, thus
Improve and subsequent step uses the accuracy inserting the bonding degree that blade method records.
Further, in step 1, described region to be tested is positioned at marginal position or the center of full wafer wafer.
Above-mentioned further scheme is used to provide the benefit that: in this further technical scheme, not treat detection region
Position is defined, and is possible not only to detect the marginal position of full wafer wafer, it is also possible to the center of detection full wafer wafer, or
By paracentral position, broken in traditional method can only marginal position surface, test wafer pole can limitation, method of testing letter
Single, applied widely.
Further, step 4 particularly as follows:
S401, measures the thickness of two wafer in described wafer sample respectively；
S402, is at the uniform velocity inserted into the blade of known thickness in described thin seam, and forms crackle in thin seam；
S403, when elastic energy and surface can balance, uses infrared light supply to irradiate at described thin seam and forms interference fringe, lead to
Cross described interference fringe is measured and obtain the length value of crackle at described thin seam；
S404, according to the described thickness of two wafer, the thickness of blade and the length value of described crackle, treats described in calculating
The surface energy of test zone.
Further, the thickness of described blade is 80～100 μm.
Further, in step S402, the speed inserting blade is 5～10cm/s, when forming crackle lasting in thin seam
Between be 1～500us and air humidity is 50～60%.
Above-mentioned further scheme is used to provide the benefit that: in this further technical scheme, to use blade insertion to measure
Surface energy at wafer bonding, can represent the bonding degree of wafer by surface.In the actual application of blade insertion,
The thickness of blade, the speed of insertion blade, the persistent period forming crackle in thin seam and air humidity all can be to detection knots
Fruit causes extreme influence.Such as blade is the thickest to be difficult to be inserted in thin seam；The insertion speed of blade continues with formation crackle
Time can affect the length value of crackle；Air humidity can affect the hydrone of crack surfaces absorption, thus substantially changes surface energy
Measured value.Therefore, when using blade insertion to measure wafer bonding degree, need above-mentioned parameter is defined, guarantee
Calculated surface can result be accurately, thus is effectively estimated the bonding degree of wafer.
In order to solve the technical problem of the present invention, additionally provide the bonding Tachistoscope of optional position on a kind of product wafer
System, selects module, cutting module, etch module and measurement module including test zone,
Described test zone selects module to need to carry out being bonded Tachistoscope for choosing on the wafer being bonded
Region to be tested；
Described cutting module for by the chip cutting method in chip package operation by described region to be tested from whole
Intercept in wafer；
Described etch module forms thin seam for the two wafer joints at the wafer sample edge intercepted；
Described measurement module, for inserting the blade of known thickness at described thin seam, uses infrared light supply irradiation described carefully
At seam and form interference fringe, calculate the bonding degree in described region to be tested according to interference fringe.
Further, described measurement module includes:
Detector unit, for measuring the thickness of two wafer in described wafer sample；
Blade inserts unit, for being at the uniform velocity inserted in described thin seam by the blade of known thickness, and is formed in thin seam
Crackle；
Infrared radiation unit, for when elastic energy and surface can balance, using infrared light supply to irradiate shape at described thin seam
Become interference fringe；
Crack length acquiring unit, for by measuring the length of crackle at the described thin seam of acquisition to described interference fringe
Angle value；
Computing unit, for according to the described thickness of two wafer, the thickness of blade and the length value of described crackle, meter
Calculate the surface energy in described region to be tested.
Accompanying drawing explanation
Fig. 1 is the schematic flow sheet of the bonding Tachistoscope method of optional position on 1 one kinds of product wafers of embodiment；
Fig. 2 is the structural representation of the bonding Tachistoscope system of optional position on 2 one kinds of product wafers of embodiment.
Detailed description of the invention
Being described principle and the feature of the present invention below in conjunction with accompanying drawing, example is served only for explaining the present invention, and
Non-for limiting the scope of the present invention.
Fig. 1 is the schematic flow sheet of the bonding Tachistoscope method of optional position on 1 one kinds of product wafers of embodiment, including
Following steps:
Step 1, chooses the region to be tested needing to carry out being bonded Tachistoscope, district to be tested on the wafer being bonded
Territory may be located at any position of wafer, such as crystal round fringes, crystal circle center or the region near crystal circle center.
Step 2, is cut described region to be tested by the chip cutting method in chip package operation from full wafer wafer
Take off.In the present embodiment, the method for laser is used to be intercepted from full wafer wafer in region to be tested, in other embodiments
In, it is also possible to using the mode of saw sword, both modes are low to the cracking surface damage of wafer, both can avoid intercepting because of general
The additional effect that mode is brought in cracking facial cleft, can conveniently realize again the intercepting of optional position on wafer, thus protect
While having demonstrate,proved bonding degree efficiency, improve the accuracy of bonding degree detecting.
Step 3, uses the wafer sample that intercepts of hydrofluoric acid treatment, and uses the method for etching wafer after treatment
The two wafer joints at sample edge form thin seam.By the way of etching, can be simply on the wafer sample limit intercepted
Two wafer joints of edge form thin seam, thus insert blade and carry out being bonded Tachistoscope, it is achieved the simple and applicable model of process
Enclose extensively.Meanwhile, this step uses Fluohydric acid. to process wafer sample before etching, can remove wafer specimen surface
Oxide-film, thus improve and subsequent step uses the accuracy inserting the bonding degree that blade method records.
Step 4, inserts the blade of known thickness at described thin seam, uses infrared light supply irradiate at described thin seam and formed
Interference fringe, calculates the bonding degree in described region to be tested according to interference fringe.In a particular embodiment, can be by calculating
Bonding degree can be assessed in the surface in region to be tested.In the present embodiment, bonding degree can be assessed by gauging surface, specifically
Comprise the following steps:
S401, measures the thickness of two wafer in described wafer sample respectively；
S402, is at the uniform velocity inserted into the blade of known thickness in described thin seam, and forms crackle in thin seam；
S403, when elastic energy and surface can balance, uses infrared light supply irradiate at described thin seam and form interference fringe,
The length value of crackle at described thin seam is obtained by described interference fringe is measured；
S404, according to the described thickness of two wafer, the thickness of blade and the length value of described crackle, treats described in calculating
The surface energy of test zone.Owing to the computing formula of surface energy is the most on the books, this is not launched in detail by the present embodiment
Thin discussion.
In the present embodiment, the thickness of described blade is 90 μm, and the speed inserting blade is 8cm/s, is formed and split in thin seam
The persistent period of stricture of vagina is 200us, and air humidity is 53%.In other embodiments, the speed inserting blade is 6cm/s,
Forming persistent period of crackle in thin seam is 360us and air humidity is 60%.Actual application in blade insertion
Cheng Zhong, the thickness of blade, the speed of insertion blade, the persistent period forming crackle in thin seam and air humidity all can be to inspections
Survey result and cause extreme influence.Such as blade is the thickest to be difficult to be inserted in thin seam；The insertion speed of blade and formation crackle
Persistent period can affect the length value of crackle；Air humidity can affect the hydrone of crack surfaces absorption, thus substantially changes table
Face can measured value.Therefore, when using blade insertion to measure wafer bonding degree, need above-mentioned parameter is defined as above,
The calculated surface of guarantee can result be accurately, thus is effectively estimated the bonding degree of wafer.
Meanwhile, use infrared light supply to irradiate described wafer sample, and use CCD to shoot at wafer sample opposite side,
If there is non-bond area at the bonded interface of wafer sample, light will be made to occur, and two secondary reflections form coherent light, warp
CCD shoots, and there will be interference fringe on picture.If non-bond area area is relatively big and clearance height is little, then there will be
A lot of bigger interference fringes.If non-bond area is the least, the most infrared picture will appear from less Newton's ring；When bonding circle
When at face, gap is bigger, infrared light almost cannot pass through, and black pattern can only occur in the correspondence position on picture.Therefore,
According to infrared transmission image, it is possible to successfully be detected defect state and the distribution etc. of bonding wafer.
Fig. 2 is the structural representation of the bonding Tachistoscope system of optional position on 2 one kinds of product wafers of embodiment, including
Test zone selects module, cutting module, etch module and measurement module,
Described test zone selects module to need to carry out being bonded Tachistoscope for choosing on the wafer being bonded
Region to be tested；
Described cutting module for by the chip cutting method in chip package operation by described region to be tested from whole
Intercept in wafer；
Described etch module forms thin seam for the two wafer joints at the wafer sample edge intercepted；
Described measurement module, for inserting the blade of known thickness at described thin seam, uses infrared light supply irradiation described carefully
At seam and form interference fringe, calculate the bonding degree in described region to be tested according to interference fringe.
In the present embodiment, described measurement module includes: detector unit, for measuring two wafer in described wafer sample
Thickness；Blade inserts unit, for being at the uniform velocity inserted in described thin seam by the blade of known thickness, and is formed in thin seam and splits
Stricture of vagina；Infrared radiation unit, for when elastic energy and surface can balance, using infrared light supply to irradiate at described thin seam and form interference
Striped；Crack length acquiring unit, for by measuring the length of crackle at the described thin seam of acquisition to described interference fringe
Value；Computing unit, for according to the described thickness of two wafer, the thickness of blade and the length value of described crackle, calculates institute
State the surface energy in region to be tested, the bonding degree of wafer can be weighed by surface.
The invention provides a kind of wafer bonding Tachistoscope method and system that can be widely applied to three-dimensional chip product,
By the wafer cutting technique surveyed in operation by chip envelope, the region to be tested of wafer is cut, thus realize wafer
The bonding degree of optional position is tested, not only broken in traditional method can only marginal position surface, test wafer pole can
Limitation, method of testing is simple, applied widely, and without introducing new operation, will not reduce the efficiency of bonding Tachistoscope.
In describing the invention, it is to be understood that term " first ", " second " are only used for describing purpose, and can not
It is interpreted as instruction or hint relative importance or the implicit quantity indicating indicated technical characteristic.Thus, define " the
One ", the feature of " second " can express or implicitly include at least one this feature.In describing the invention, " multiple "
It is meant that at least two, such as two, three etc., unless otherwise expressly limited specifically.
In the description of this specification, reference term " embodiment ", " some embodiments ", " example ", " specifically show
Example " or the description of " some examples " etc. means to combine this embodiment or example describes specific features, structure, material or spy
Point is contained at least one embodiment or the example of the present invention.In this manual, to the schematic representation of above-mentioned term not
Identical embodiment or example must be directed to.And, the specific features of description, structure, material or feature can be in office
One or more embodiments or example combine in an appropriate manner.Additionally, in the case of the most conflicting, the skill of this area
The feature of the different embodiments described in this specification or example and different embodiment or example can be tied by art personnel
Close and combination.
Although above it has been shown and described that embodiments of the invention, it is to be understood that above-described embodiment is example
Property, it is impossible to being interpreted as limitation of the present invention, those of ordinary skill in the art within the scope of the invention can be to above-mentioned
Embodiment is changed, revises, replaces and modification.
Claims (9)
1. the bonding Tachistoscope method of optional position on a product wafer, it is characterised in that comprise the steps:
Step 1, chooses the region to be tested needing to carry out being bonded Tachistoscope on the wafer being bonded；
Step 2, under intercepting described region to be tested by the chip cutting method in chip package operation from full wafer wafer
Come；
Step 3, the two wafer joints at the wafer sample edge intercepted form thin seam；
Step 4, inserts the blade of known thickness at described thin seam, uses infrared light supply irradiate at described thin seam and form interference
Striped, calculates the bonding degree in described region to be tested according to interference fringe.
The bonding Tachistoscope method of optional position on a kind of product wafer the most according to claim 1, it is characterised in that
In described step 2, the mode of laser or saw sword is used to be intercepted from full wafer wafer in described region to be tested.
The bonding Tachistoscope method of optional position on a kind of product wafer the most according to claim 1, it is characterised in that
Use the wafer sample that intercepts of hydrofluoric acid treatment, and use the two panels at the method for etching wafer sample edge after treatment
Wafer joint forms thin seam.
4., according to the bonding Tachistoscope method of optional position on the arbitrary described a kind of product wafer of claims 1 to 3, it is special
Levying and be, in step 1, described region to be tested is positioned at marginal position or the center of full wafer wafer.
The bonding Tachistoscope method of optional position on a kind of product wafer the most according to claim 4, it is characterised in that
Step 4 particularly as follows:
S401, measures the thickness of two wafer in described wafer sample respectively；
S402, is at the uniform velocity inserted into the blade of known thickness in described thin seam, and forms crackle in thin seam；
S403, when elastic energy and surface can balance, uses infrared light supply irradiate at described thin seam and form interference fringe, passes through
Described interference fringe is measured and obtains the length value of crackle at described thin seam；
S404, according to the described thickness of two wafer, the thickness of blade and the length value of described crackle, calculates described to be tested
The surface energy in region.
The bonding Tachistoscope method of optional position on a kind of product wafer the most according to claim 5, it is characterised in that
The thickness of described blade is 80～100 μm.
The bonding Tachistoscope method of optional position on a kind of product wafer the most according to claim 5, it is characterised in that
In step S402, the speed inserting blade is 5～10cm/s, formed in thin seam persistent period of crackle be 1～500us and
Air humidity is 50～60%.
8. the bonding Tachistoscope system of optional position on a product wafer, it is characterised in that include that test zone selects mould
Block, cutting module, etch module and measurement module,
Described test zone selects module to need to carry out being bonded the to be measured of Tachistoscope for choosing on the wafer being bonded
Examination region；
Described cutting module is for brilliant from full wafer by described region to be tested by the chip cutting method in chip package operation
On circle, intercepting is got off；
Described etch module forms thin seam for the two wafer joints at the wafer sample edge intercepted；
Described measurement module, for inserting the blade of known thickness at described thin seam, uses infrared light supply to irradiate at described thin seam
And form interference fringe, the bonding degree in described region to be tested is calculated according to interference fringe.
The bonding Tachistoscope system of optional position on a kind of product wafer the most according to claim 8, it is characterised in that
Described measurement module includes:
Detector unit, for measuring the thickness of two wafer in described wafer sample；
Blade inserts unit, for being at the uniform velocity inserted in described thin seam by the blade of known thickness, and forms crackle in thin seam；
Infrared radiation unit, is used for when elastic energy and surface can balance, and is formed dry at the employing infrared light supply described thin seam of irradiation
Relate to striped；
Crack length acquiring unit, for by measuring the length of crackle at the described thin seam of acquisition to described interference fringe
Value；
Computing unit, for according to the described thickness of two wafer, the thickness of blade and the length value of described crackle, calculates institute
State the surface energy in region to be tested.
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106707091A (en) * | 2016-12-13 | 2017-05-24 | 武汉新芯集成电路制造有限公司 | Detection method of hybrid bonding connection point connectivity |
| CN108039327A (en) * | 2017-12-06 | 2018-05-15 | 德淮半导体有限公司 | A kind of system of wafer processing device and automatic measurement wafer bonding energy |
| CN109065477A (en) * | 2018-07-26 | 2018-12-21 | 长江存储科技有限责任公司 | The detection method of wafer bonding device, wafer bonding process |
| CN111458289A (en) * | 2020-04-03 | 2020-07-28 | 长江存储科技有限责任公司 | Bonding energy testing equipment and method and bonding equipment process parameter determining method |
| CN112701058A (en) * | 2020-12-30 | 2021-04-23 | 长春长光圆辰微电子技术有限公司 | Method for testing wafer bonding force |
| CN112767398A (en) * | 2021-04-07 | 2021-05-07 | 惠州高视科技有限公司 | Method and device for detecting wafer defects |
| CN112881283A (en) * | 2021-01-11 | 2021-06-01 | 长江存储科技有限责任公司 | Detection method and detection device for bonding degree of wafer and semiconductor process equipment |
| CN113299573A (en) * | 2021-04-28 | 2021-08-24 | 长鑫存储技术有限公司 | Wafer grinding method and wafer failure analysis method |
| CN117433669A (en) * | 2023-12-20 | 2024-01-23 | 北京青禾晶元半导体科技有限责任公司 | Wafer bonding force testing device and testing method |
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