CN106707091A - Detection method of hybrid bonding connection point connectivity - Google Patents
Detection method of hybrid bonding connection point connectivity Download PDFInfo
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- CN106707091A CN106707091A CN201611147633.0A CN201611147633A CN106707091A CN 106707091 A CN106707091 A CN 106707091A CN 201611147633 A CN201611147633 A CN 201611147633A CN 106707091 A CN106707091 A CN 106707091A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/50—Testing of electric apparatus, lines, cables or components for short-circuits, continuity, leakage current or incorrect line connections
- G01R31/66—Testing of connections, e.g. of plugs or non-disconnectable joints
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
Abstract
The invention provides a detection method of hybrid bonding connection point connectivity. The method is suitable for a hybrid bonding structure formed through carrying out hybrid bonding on a first manufactured and completed wafer and a second manufactured and completed wafer. The bonding structure comprises a plurality of hybrid bonding connection points. The first wafer and the second wafer are provided. A first stereo conducting layer and a second stereo conducting layer are generated on upper surfaces of the first wafer and the second wafer respectively. The first stereo conducting layer and the second stereo conducting layer are mutually aligned and are contacted and bonded so as to form the hybrid bonding structure. A bonding portion of the first stereo conducting layer and the second stereo conducting layer forms the plurality of hybrid bonding connection points. An electron beam tool is used to carry out electron beam irradiation on each hybrid bonding connection point so as to detect conduction performance of each hybrid bonding connection point and output a detection result. The method has advantages that a hybrid bonding connection state is timely represented; and a defective product is discovered in advance and technology optimization is performed.
Description
Technical field
The present invention relates to bonding technology technical field, more particularly to a kind of connective detection side of hybrid bonded tie point
Method.
Background technology
In super large-scale integration development increasingly close in the state of physics limit, in physical size and cost aspect all
Advantageous three dimensional integrated circuits is the effective way for extending Moore's Law and solving the problems, such as Advanced Packaging.And wafer bonding skill
One of integrated key technology of art exactly three-dimensional circuit, especially hybrid bonded technology can while two panels wafer bonding reality
The interconnected of existing thousands of chips, can greatly improve chip performance and cost-effective.
Currently, the mixing key technology of wafer has stepped into industrial production, for detecing for the hybrid bonded connection yield of wafer
Survey and mainly characterized by the final testing electrical property of technique, so, problem wafer can not timely find, greatly increase
The quantity of production cost and defective product.
At present, a kind of side that can be detected to hybrid bonded connection yield in time in industrial processes is needed badly
Method, to find the problem in technique in advance.
The content of the invention
For problems of the prior art, can timely characterize hybrid bonded connection the invention provides one kind and connect
Logical situation, pinpoint the problems product and carries out the connective detection method of hybrid bonded tie point of process optimization in advance.
The present invention is adopted the following technical scheme that：
The connective detection method of a kind of hybrid bonded tie point, it is adaptable to the first wafer and a system for completing are prepared by one
Standby the second wafer for completing carries out the hybrid bonded rear hybrid bonded structure for constituting, and the bonding structure includes multiple mixing keys
Close tie point；Methods described includes：
Step S1, the second wafer described in the first wafer and described in offer one；
Step S2, respectively at the upper surface of first wafer and second wafer upper surface generate the first solid lead
Electric layer and the second three-dimensional conductive layer；
Step S3, the described first three-dimensional conductive layer and the second three-dimensional conductive layer are mutually aligned and contact bonding with structure
Into the hybrid bonded structure, constituted at the bonding of the described first three-dimensional conductive layer and the second three-dimensional conductive layer multiple described
Hybrid bonded tie point；
Step S4, use the e-beam tool electron beam irradiation is carried out to hybrid bonded tie point each described with to each institute
The conduction for stating hybrid bonded tie point is detected and is exported testing result.
Preferably, in the step S2, in the tool of the three-dimensional conductive layer of upper surface generation described first of first wafer
Body step includes：
Step S21a, one first dielectric substance layer of upper surface formation in first wafer；
Step S22a, coating photoresist cover the upper surface of first dielectric substance layer, successively using photoetching, lithographic method
First groove is formed in first dielectric substance layer；
Step S23a, the metal filled first groove is deposited using metal deposition in first dielectric substance layer
The first conductive layer is formed, and planarization process is carried out to first conductive layer；
Step S24a, the second dielectric substance layer of upper surface formation in first dielectric substance layer；
Step S25a, coating photoresist cover the upper surface of second dielectric substance layer, successively using photoetching, lithographic method
The second groove that formation is connected with the first groove at the correspondence hybrid bonded tie point in second dielectric substance layer；
Step S26a, the metal filled second groove is deposited using the metal deposition in second dielectric medium
The second conductive layer connected with first conductive layer is formed in layer, and second conductive layer is carried out at the planarization
Reason.
Preferably, the first groove includes multiple first point of horizontal groove, and multiple first point of groove constitute one
Network structure, first conductive layer being made up of first point of ditch flute profile is parallel with first wafer；
The second groove includes second point of groove of multiple longitudinal directions, is parallel to each other between each described second point of groove,
Each described second point of groove is respectively positioned at the node location of the network structure, described the be made up of second point of groove
Two conductive layers are vertical with first wafer.
Preferably, in the step S2, in the tool of the three-dimensional conductive layer of upper surface generation described second of second wafer
Body step includes：
Step S21b, one the 3rd dielectric substance layer of upper surface formation in second wafer；
Step S22b, coating photoresist cover the upper surface of the 3rd dielectric substance layer, successively using photoetching, lithographic method
In the 3rd dielectric substance layer the 3rd groove is formed at the correspondence hybrid bonded tie point；
Step S23b, metal filled 3rd groove is deposited using metal deposition in the 3rd dielectric substance layer
Form the 3rd conductive layer；
Step S24b, the 4th dielectric substance layer of upper surface formation in the 3rd dielectric substance layer；
Step S25b, coating photoresist cover the upper surface of the 4th dielectric substance layer, successively using photoetching, lithographic method
Formation is respectively communicated with the 3rd groove at the correspondence hybrid bonded tie point in the 4th dielectric substance layer the 4th
Groove；
Step S26b, metal filled 4th groove is deposited using metal deposition in the 4th dielectric substance layer
The 4th conductive layer that formation is connected with the 3rd conductive layer.
Preferably, the 3rd groove includes the 3rd point of groove of multiple longitudinal directions, phase between each described 3rd point of groove
Mutually parallel, the 3rd conductive layer being made up of the 3rd point of ditch flute profile is vertical with second wafer；
4th groove includes the 4th point of groove of multiple longitudinal directions, is parallel to each other between each described 4th point of groove,
The 4th conductive layer being made up of the 4th point of ditch flute profile is vertical with second wafer.
Preferably, the step S4 includes：
Step S41, the described hybrid bonded structure being made up of first wafer and second wafer is put into it is described
The working position of e-beam tool；
Step S42, by the described first three-dimensional conductive layer ground connection；
Step S43, using the e-beam tool to each the described hybrid bonded connection in the hybrid bonded structure
Point carries out electron beam irradiation；
Step S44, the reality observed at each described hybrid bonded tie point by the display device of the e-beam tool
Border developed image, the actual developed image is compared with default standard development image to obtain the testing result；
If the actual developed image is identical with the standard development image, turned at the hybrid bonded tie point；
If the brightness of standard development image is high described in the brightness ratio of the actual developed image, the hybrid bonded connection
Leaky is turned on but existed at point；
If the brightness of standard development image is low described in the brightness ratio of the actual developed image, the hybrid bonded connection
Do not turned at point.
Preferably, formation first conductive layer, second conductive layer, the 3rd conductive layer and the described 4th lead
The deposit metal of electric layer includes copper.
The beneficial effects of the invention are as follows：By the technical scheme in the present invention, designed in the bonding technology of two wafers
Hybrid bonded structure, and using e-beam tool to hybrid bonded structure in hybrid bonded tie point be irradiated, so as to examine
Survey two wafers carry out it is hybrid bonded after circuit conduction come recognize in advance bonding wafer yield, can be hybrid bonded
Timely characterized in the production process of product it is hybrid bonded connect situation, the product and to carry out technique excellent of pinpointing the problems in advance
Change.
Brief description of the drawings
Fig. 1 be a preferred embodiment of the present invention in, the schematic diagram of hybrid bonded structure；
During Fig. 2 is a preferred embodiment of the present invention, the flow chart of the connective detection method of hybrid bonded tie point；
Fig. 3 be a preferred embodiment of the present invention in, the schematic diagram of step S21a；
Fig. 4 be a preferred embodiment of the present invention in, the schematic diagram of step S22a；
Fig. 5 be a preferred embodiment of the present invention in, the schematic diagram of step S23a；
Fig. 6 be a preferred embodiment of the present invention in, the schematic diagram of step S24a；
Fig. 7 be a preferred embodiment of the present invention in, the schematic diagram of step S25a；
Fig. 8 be a preferred embodiment of the present invention in, the schematic diagram of step S26a；
During Fig. 9 is a preferred embodiment of the present invention, in the three-dimensional conductive layer of upper surface generation first of the first wafer
Flow chart；
Figure 10 be a preferred embodiment of the present invention in, the top view of the first wafer；
Figure 11 be a preferred embodiment of the present invention in, the schematic diagram of step S21b；
Figure 12 be a preferred embodiment of the present invention in, the schematic diagram of step S22b；
Figure 13 be a preferred embodiment of the present invention in, the schematic diagram of step S23b；
Figure 14 be a preferred embodiment of the present invention in, the schematic diagram of step S24b；
Figure 15 be a preferred embodiment of the present invention in, the schematic diagram of step S25b；
Figure 16 be a preferred embodiment of the present invention in, the schematic diagram of step S26b；
During Figure 17 is a preferred embodiment of the present invention, in the three-dimensional conductive layer of upper surface generation second of the second wafer
Flow chart.
Specific embodiment
It should be noted that in the state of not conflicting, following technical proposals can be mutually combined between technical characteristic.
Specific embodiment of the invention is further described below in conjunction with the accompanying drawings：
As shown in Figure 1-2, the connective detection method of a kind of hybrid bonded tie point, it is adaptable to for completing is prepared by
One wafer 1 and second wafer 2 for preparing completion carry out the hybrid bonded rear hybrid bonded structure for constituting, in above-mentioned bonding structure
Including multiple hybrid bonded tie points；The above method includes：
Step S1, offer above-mentioned second wafer 2 of one above-mentioned first wafer 1 and；
Step S2, the solid of upper surface generation first respectively at the upper surface of above-mentioned first wafer 1 and above-mentioned second wafer 2
The three-dimensional conductive layer 4 of conductive layer 3 and second；
Step S3, by the above-mentioned first three-dimensional conductive layer 3 and above-mentioned second three-dimensional conductive layer 4 be mutually aligned and contact bonding with
Constitute above-mentioned hybrid bonded structure, constituted at the bonding of the above-mentioned first three-dimensional conductive layer 3 and above-mentioned second three-dimensional conductive layer 4 multiple
Above-mentioned hybrid bonded tie point；
Step S4, the e-beam tool is used to carry out electron beam irradiation with each to each above-mentioned hybrid bonded tie point
The conduction for stating hybrid bonded tie point is detected and is exported testing result.
In the present embodiment, design hybrid bonded in the bonding technology of above-mentioned second wafer 2 of above-mentioned first wafer 1 and
Structure, and using e-beam tool to hybrid bonded structure in hybrid bonded tie point be irradiated, so as to detect two platelets
Circle carry out it is hybrid bonded after circuit conduction come recognize in advance bonding wafer yield, can be in the life of hybrid bonded product
Timely characterized during product it is hybrid bonded connect situation, pinpoint the problems product and carries out process optimization in advance.
In preferred embodiments of the present invention, in above-mentioned steps S2, above-mentioned first is generated in the upper surface of above-mentioned first wafer 1
The specific steps of three-dimensional conductive layer 3 include：
Step S21a, one first dielectric substance layer 9 of upper surface formation in above-mentioned first wafer 1；
Step S22a, coating photoresist cover the upper surface of above-mentioned first dielectric substance layer 9, successively using photoetching, etching side
Method forms first groove in above-mentioned first dielectric substance layer 9；
Step S23a, metal filled above-mentioned first groove is deposited using metal deposition in above-mentioned first dielectric substance layer 9
The first conductive layer 5 of middle formation, and planarization process is carried out to above-mentioned first conductive layer 5；
Step S24a, the second dielectric substance layer 10 of upper surface formation in above-mentioned first dielectric substance layer 9；
Step S25a, coating photoresist cover the upper surface of above-mentioned second dielectric substance layer 10, successively using photoetching, etching side
Method forms second connected with above-mentioned first groove in above-mentioned second dielectric substance layer 10 at the above-mentioned hybrid bonded tie point of correspondence
Groove；
Step S26a, metal filled above-mentioned second groove is deposited using above-mentioned metal deposition in above-mentioned second dielectric medium
The second conductive layer 6 connected with above-mentioned first conductive layer 5 is formed in layer 10, and above-mentioned second conductive layer 6 is carried out above-mentioned flat
Change is processed.
In preferred embodiments of the present invention, above-mentioned first groove includes first point of multiple horizontal grooves, multiple above-mentioned the
One point of groove constitutes a network structure, above-mentioned first conductive layer 5 being made up of above-mentioned first point of ditch flute profile and above-mentioned first wafer 1
It is parallel；
Above-mentioned second groove includes second point of groove of multiple longitudinal directions, is parallel to each other between each above-mentioned second point of groove,
Each above-mentioned second point of groove is respectively positioned at the node location of above-mentioned network structure, above-mentioned the be made up of above-mentioned second point of groove
Two conductive layers 6 are vertical with above-mentioned first wafer 1.
In preferred embodiments of the present invention, in above-mentioned steps S2, above-mentioned second is generated in the upper surface of above-mentioned second wafer 2
The specific steps of three-dimensional conductive layer 4 include：
Step S21b, one the 3rd dielectric substance layer 11 of upper surface formation in above-mentioned second wafer 2；
Step S22b, coating photoresist cover the upper surface of above-mentioned 3rd dielectric substance layer 11, successively using photoetching, etching side
Method forms the 3rd groove in above-mentioned 3rd dielectric substance layer 11 at the above-mentioned hybrid bonded tie point of correspondence；
Step S23b, metal filled above-mentioned 3rd groove is deposited using metal deposition in above-mentioned 3rd dielectric substance layer 11
The 3rd conductive layer 7 of middle formation；
Step S24b, the 4th dielectric substance layer 12 of upper surface formation in above-mentioned 3rd dielectric substance layer 11；
Step S25b, coating photoresist cover the upper surface of above-mentioned 4th dielectric substance layer 12, successively using photoetching, etching side
Method is formed in above-mentioned 4th dielectric substance layer 12 at the above-mentioned hybrid bonded tie point of correspondence and is respectively communicated with above-mentioned 3rd groove
4th groove；
Step S26b, metal filled above-mentioned 4th groove is deposited using metal deposition in above-mentioned 4th dielectric substance layer 12
It is middle to form the 4th conductive layer 8 connected with above-mentioned 3rd conductive layer 7.
In preferred embodiments of the present invention, above-mentioned 3rd groove includes the 3rd point of grooves of multiple longitudinal directions, and each above-mentioned the
It is parallel to each other between three points of grooves, above-mentioned 3rd conductive layer 7 being made up of above-mentioned 3rd point of ditch flute profile hangs down with above-mentioned second wafer 2
Directly；
Above-mentioned 4th groove includes the 4th point of groove of multiple longitudinal directions, is parallel to each other between each above-mentioned 4th point of groove,
Above-mentioned 4th conductive layer 8 being made up of above-mentioned 4th point of ditch flute profile is vertical with above-mentioned second wafer 2.
In preferred embodiments of the present invention, above-mentioned steps S4 includes：
Step S41, the above-mentioned hybrid bonded structure being made up of above-mentioned first wafer 1 and above-mentioned second wafer 2 is put into
State the working position of e-beam tool；
Step S42, the above-mentioned first three-dimensional conductive layer 3 is grounded；
Step S43, using above-mentioned e-beam tool to each the above-mentioned hybrid bonded connection in above-mentioned hybrid bonded structure
Point carries out electron beam irradiation；
Step S44, the reality observed at each above-mentioned hybrid bonded tie point by the display device of above-mentioned e-beam tool
Border developed image, above-mentioned actual developed image is compared with default standard development image to obtain above-mentioned testing result；
If above-mentioned actual developed image is identical with above-mentioned standard developed image, turned at above-mentioned hybrid bonded tie point；
If the brightness of the brightness ratio above-mentioned standard developed image of above-mentioned actual developed image is high, above-mentioned hybrid bonded connection
Leaky is turned on but existed at point；
If the brightness of the brightness ratio above-mentioned standard developed image of above-mentioned actual developed image is low, above-mentioned hybrid bonded connection
Do not turned at point.
In preferred embodiments of the present invention, above-mentioned first conductive layer 5, above-mentioned second conductive layer 6, above-mentioned 3rd conduction are formed
The deposit metal of layer 7 and above-mentioned 4th conductive layer 8 includes copper.
For a person skilled in the art, after reading described above, various changes and modifications undoubtedly will be evident that.
Therefore, appending claims should regard the whole variations and modifications for covering true intention of the invention and scope as.In power
Any and all scope and content of equal value, are all considered as still belonging to the intent and scope of the invention in the range of sharp claim.
Claims (8)
1. the connective detection method of a kind of hybrid bonded tie point, it is characterised in that suitable for preparing complete first by
Wafer and second wafer for preparing completion carry out the hybrid bonded rear hybrid bonded structure for constituting, and the bonding structure includes
Multiple hybrid bonded tie points；Methods described includes：
Step S1, the second wafer described in the first wafer and described in offer one；
Step S2, the three-dimensional conductive layer of upper surface generation first respectively at the upper surface of first wafer and second wafer
With the second three-dimensional conductive layer；
Step S3, the described first three-dimensional conductive layer and the second three-dimensional conductive layer are mutually aligned and contact bonding to constitute
State hybrid bonded structure, multiple mixing are constituted at the bonding of the described first three-dimensional conductive layer and the second three-dimensional conductive layer
Bonding tie point；
Step S4, use e-beam tool hybrid bonded tie point each described is carried out electron beam irradiation with to each described mix
The conduction for closing bonding tie point is detected and is exported testing result.
2. detection method according to claim 1, it is characterised in that in the step S2, in the upper of first wafer
The specific steps of the first three-dimensional conductive layer include described in Surface Creation：
Step S21a, one first dielectric substance layer of upper surface formation in first wafer；
Step S22a, coating photoresist cover the upper surface of first dielectric substance layer, successively using photoetching, lithographic method in institute
State and form first groove in the first dielectric substance layer；
Step S23a, the metal filled first groove is deposited using metal deposition formed in first dielectric substance layer
First conductive layer, and planarization process is carried out to first conductive layer；
Step S24a, one second dielectric substance layer of upper surface formation in first dielectric substance layer；
Step S25a, the upper surface for being coated with the photoresist covering second dielectric substance layer, successively using photoetching, lithographic method
The second groove that formation is connected with the first groove at the correspondence hybrid bonded tie point in second dielectric substance layer；
Step S26a, the metal filled second groove is deposited using the metal deposition in second dielectric substance layer
The second conductive layer that formation is connected with first conductive layer, and the planarization process is carried out to second conductive layer.
3. detection method according to claim 2, it is characterised in that the first groove includes multiple horizontal first points
Groove, multiple first point of groove constitute a network structure, first conductive layer being made up of first point of ditch flute profile
It is parallel with first wafer；
The second groove includes second point of groove of multiple longitudinal directions, is parallel to each other between each described second point of groove, each
Second point of groove respectively positioned at the node location of the network structure, lead by described second be made up of second point of groove
Electric layer is vertical with first wafer.
4. detection method according to claim 3, it is characterised in that form first conductive layer and described second conductive
The deposit metal of layer includes copper.
5. detection method according to claim 1, it is characterised in that in the step S2, in the upper of second wafer
The specific steps of the second three-dimensional conductive layer include described in Surface Creation：
Step S21b, one the 3rd dielectric substance layer of upper surface formation in second wafer；
Step S22b, coating photoresist cover the upper surface of the 3rd dielectric substance layer, successively using photoetching, lithographic method in institute
State in the 3rd dielectric substance layer and form the 3rd groove at the correspondence hybrid bonded tie point；
Step S23b, metal filled 3rd groove is deposited using metal deposition formed in the 3rd dielectric substance layer
3rd conductive layer；
Step S24b, one the 4th dielectric substance layer of upper surface formation in the 3rd dielectric substance layer；
Step S25b, coating photoresist cover the upper surface of the 4th dielectric substance layer, successively using photoetching, lithographic method in institute
State the 4th groove that formation is connected with the 3rd groove at the correspondence hybrid bonded tie point in the 4th dielectric substance layer；
Step S26b, metal filled 4th groove is deposited using the metal deposition in the 4th dielectric substance layer
The 4th conductive layer that formation is connected with the 3rd conductive layer.
6. detection method according to claim 5, it is characterised in that the 3rd groove includes the 3rd point of multiple longitudinal directions
Groove, is parallel to each other between each described 3rd point of groove, the 3rd conductive layer being made up of the 3rd point of ditch flute profile with
Second wafer is vertical；
4th groove includes the 4th point of groove of multiple longitudinal directions, is parallel to each other between each described 4th point of groove, by institute
The 4th conductive layer for stating the 4th point of ditch flute profile composition is vertical with second wafer.
7. detection method according to claim 6, it is characterised in that form the 3rd conductive layer and described 4th conductive
The deposit metal of layer includes copper.
8. detection method according to claim 1, it is characterised in that the step S4 includes：
Step S41, the described hybrid bonded structure being made up of first wafer and second wafer is put into the electronics
The working position of beam tool；
Step S42, by the described first three-dimensional conductive layer ground connection；
Step S43, use the e-beam tool it is described to each in the hybrid bonded structure it is hybrid bonded connection click through
Row electron beam irradiation；
Step S44, the reality observed at each described hybrid bonded tie point by the display device of the e-beam tool are shown
Shadow image, the actual developed image is compared with default standard development image to obtain the testing result；
If the actual developed image is identical with the standard development image, turned at the hybrid bonded tie point；
If the brightness of standard development image is high described in the brightness ratio of the actual developed image, at the hybrid bonded tie point
Turn on but exist leaky；
If the brightness of standard development image is low described in the brightness ratio of the actual developed image, at the hybrid bonded tie point
Do not turn on.
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Application publication date: 20170524 |