CN109065477A - The detection method of wafer bonding device, wafer bonding process - Google Patents
The detection method of wafer bonding device, wafer bonding process Download PDFInfo
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- CN109065477A CN109065477A CN201810834893.8A CN201810834893A CN109065477A CN 109065477 A CN109065477 A CN 109065477A CN 201810834893 A CN201810834893 A CN 201810834893A CN 109065477 A CN109065477 A CN 109065477A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67294—Apparatus for monitoring, sorting or marking using identification means, e.g. labels on substrates or labels on containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The present invention provides the detection methods of a kind of wafer bonding device and wafer bonding process.The wafer bonding device includes: the first chuck, is suitable for keeping the first wafer；Second chuck is suitable for keeping the second wafer, and is oppositely arranged with the first chuck；At least one diffraction module, diffraction module include: electromagnetic wave projecting unit, suitable for electromagnetic wave is projected to the gap formed between the first wafer and the second wafer；And image acquisition units, suitable for receiving the electromagnetic wave across gap, to generate the picture signal for including diffraction pattern；And parsing module, suitable for determining the relative position of the first wafer and the second wafer according to picture signal.The detection method of wafer bonding device and wafer bonding process of the invention can detect wafer bonding process.
Description
Technical field
The invention mainly relates to semiconductors manufacture more particularly to a kind of detections of wafer bonding device and wafer bonding process
Method.
Background technique
With the development of electronic industry, the stacking of device higher number is may be implemented in wafer bonding technique, thus causes to get over
Carry out more concerns.But since wafer bonding device developing history is shorter, compares other semiconductor equipments still and have and is many insufficient
Place, therefore influence of the development of wafer bonding device to future semiconductor industry is increasing.
Currently, wafer bonding process specifically how, need related to whole wafer bonding process by experienced engineer
The understanding of the setting of parameter obtains.But as wafer bonding technique becomes increasingly complex, the micro-judgment of engineer is simultaneously unreliable,
Therefore the device for being able to detect wafer bonding process is needed.
Summary of the invention
The technical problem to be solved in the present invention is to provide the detection method of a kind of wafer bonding device and wafer bonding process,
It can detect wafer bonding process.
In order to solve the above technical problems, an aspect of of the present present invention provides a kind of wafer bonding device, comprising: the first card
Disk is suitable for keeping the first wafer；Second chuck is suitable for keeping the second wafer, and is oppositely arranged with first chuck；At least one
A diffraction module, the diffraction module include: electromagnetic wave projecting unit, suitable for electromagnetic wave is projected to first wafer and institute
State the gap formed between the second wafer；And image acquisition units, suitable for receiving the electromagnetic wave across the gap, with
Generate the picture signal comprising diffraction pattern；And parsing module, suitable for determining first wafer according to described image signal
With the relative position of second wafer.
In one embodiment of this invention, the parsing module is suitable for determining first wafer according to described image signal
With the distance of the second wafer corresponding position in a first direction, the first direction is to keep perpendicular to first chuck
The surface of first wafer and/or second chuck keep the direction on the surface of second wafer.
In one embodiment of this invention, the parsing module is suitable for determining first wafer according to described image signal
The width being bonded with second wafer.
In one embodiment of this invention, the parsing module is suitable for determining first wafer according to described image signal
With the offset of second wafer in a second direction, the second direction is to be parallel to first chuck to keep described first
The surface of wafer and/or second chuck keep the direction on the surface of second wafer.
In one embodiment of this invention, first chuck includes multiple first grooves, the electromagnetic wave projecting unit
It is set in first groove of opposite two with described image acquisition unit.
In one embodiment of this invention, second chuck includes multiple second grooves, the electromagnetic wave projecting unit
It is set in second groove of opposite two with described image acquisition unit.
In one embodiment of this invention, the electromagnetic wave of the electromagnetic wave projecting unit projection is light wave.
In one embodiment of this invention, the electromagnetic wave projecting unit includes light source and the first lens, the light source hair
Light out forms directional light after first lens transformation.
In one embodiment of this invention, the light source is relevant radiant.
In one embodiment of this invention, the light wave of the electromagnetic wave projecting unit projection is rectangular light beam, the rectangle
Light beam and first chuck keep the surface of first wafer and/or second chuck to keep the table of second wafer
The parallel side in face is greater than or equal to first wafer and/or the second brilliant diameter of a circle.
In one embodiment of this invention, described image acquisition unit includes the second lens and imaging sensor, passes through institute
The light wave in gap is stated after second lens transformation, forms the diffraction pattern, described image in described image sensor
The diffraction pattern is converted into electric signal by sensor, to generate described image signal.
In one embodiment of this invention, described image sensor is set to the focal plane of second lens.
In one embodiment of this invention, the electromagnetic wave propagation direction of the electromagnetic wave projecting unit projection is parallel
The surface of first wafer and/or second chuck is kept to keep the surface of second wafer in first chuck.
In one embodiment of this invention, the wafer bonding device includes two diffraction modules of orthogonal setting.
In one embodiment of this invention, the wafer bonding device is suitable for determining first wafer at multiple time points
With the relative position of second wafer.
Another aspect provides a kind of detection methods of wafer bonding process, are adapted to detect for the first wafer and
The bonding process of two wafers, the detection method include: to obtain electromagnetic wave to be projected to first wafer and second wafer
Between the gap that is formed be formed by diffraction pattern；First wafer and second wafer are determined according to the diffraction pattern
Relative position.
In one embodiment of this invention, first wafer and second wafer are determined according to the diffraction pattern
Relative position includes: to determine first wafer and the second wafer corresponding position in a first direction according to the diffraction pattern
On distance, the first direction be perpendicular to the first chuck keep first wafer surface and/or the second chuck keep
The direction on the surface of second wafer.
In one embodiment of this invention, first wafer and second wafer are determined according to the diffraction pattern
Relative position includes: to determine width that first wafer and second wafer have been bonded according to the diffraction pattern.
In one embodiment of this invention, first wafer and second wafer are determined according to the diffraction pattern
Relative position includes: to determine first wafer and second wafer in a second direction inclined according to the diffraction pattern
It moves, the second direction is to be parallel to the first chuck the surface of first wafer and/or the second chuck is kept to keep described the
The direction on the surface of two wafers.
In one embodiment of this invention, the diffraction pattern includes that the electromagnetic wave is thrown along third direction and fourth direction
It is incident upon the gap formed between first wafer and second wafer and is formed by diffraction pattern, the third direction and institute
It states that fourth direction is orthogonal, and keeps the surface of first wafer and/or the second chuck to keep institute each parallel to the first chuck
State the direction on the surface of the second wafer.
In one embodiment of this invention, the detection method obtains the diffraction pattern at multiple time points, and according to
The diffraction pattern that different time points obtain determines the relative position of first wafer and second wafer respectively.
Compared with prior art, the invention has the following advantages that
The detection method of wafer bonding device and wafer bonding process of the invention, forms towards the first wafer and the second wafer
Gap projection the electromagnetic wave of diffraction can occur, acquire the diffraction pattern of formation, and analyze the diffraction pattern, can be with
Obtain the relative position of the first wafer and the second wafer.In addition, the inspection of wafer bonding device and wafer bonding process of the invention
Survey method can also detect the relative position of the first wafer and the second wafer multiple time points in bonding process, can obtain
To the dynamic process of wafer bonding.
Detailed description of the invention
Fig. 1 a- Fig. 1 d is some schematic diagrames of wafer bonding process.
Fig. 2 is the schematic three dimensional views of the wafer bonding device of some embodiments of the invention.
Fig. 3 is diagrammatic cross-section of the wafer bonding device along line A-A of some embodiments of the invention.
Fig. 4 is the second chuck of the wafer bonding device of some embodiments of the invention and the schematic diagram of diffraction module.
Fig. 5 is the schematic diagram of the electromagnetic wave projecting unit of some embodiments of the invention.
Fig. 6 is the schematic diagram of the image acquisition units of some embodiments of the invention.
Fig. 7 is the schematic diagram of the single slit diffraction of some embodiments of the invention.
Fig. 8 a is the status diagram of the wafer bonding device of one embodiment of the invention.
Fig. 8 b be the wafer bonding device of one embodiment of the invention shown in Fig. 8 a in the state of diffraction pattern signal
Figure.
Fig. 8 c is the intensity schematic diagram in diffraction pattern shown in Fig. 8 b in line B-B.
Fig. 9 a is the status diagram of the wafer bonding device of one embodiment of the invention.
Fig. 9 b be the wafer bonding device of one embodiment of the invention shown in Fig. 9 a in the state of diffraction pattern signal
Figure.
Figure 10 is the flow diagram of the detection method of the wafer bonding process of some embodiments of the invention.
Specific embodiment
For the above objects, features and advantages of the present invention can be clearer and more comprehensible, below in conjunction with attached drawing to tool of the invention
Body embodiment elaborates.
In the following description, numerous specific details are set forth in order to facilitate a full understanding of the present invention, but the present invention can be with
It is different from other way described herein using other and implements, therefore the present invention is by the limit of following public specific embodiment
System.
As shown in the application and claims, unless context clearly prompts exceptional situation, " one ", "one", " one
The words such as kind " and/or "the" not refer in particular to odd number, may also comprise plural number.It is, in general, that term " includes " only prompts to wrap with "comprising"
Include clearly identify the step of and element, and these steps and element do not constitute one it is exclusive enumerate, method or apparatus
The step of may also including other or element.
Here, " about ", " about ", " substantial " term be generally represented in the 20% of a given value or range, preferably
It is in 10%, is more preferably in 5% or within 3% or within 2% or within 1% or within 0.5%.Given quantity herein
It is quantity about, that is, in the case where no certain illustrated " about ", " about ", " substantial ", can still implies " about ", " greatly
About ", the meaning of " substantial ".
Unless otherwise defined, whole terms (including technology and scientific words) as used herein have and skill belonging to the present invention
The normally understood identical connotation of the technical staff in art field.It is appreciated that, these terms are for example in usually used dictionary
Define term, should be interpreted to have with the relevant technologies and background of the invention or the consistent meaning of context, without Ying Yiyi
Idealization or excessively formal mode are interpreted, unless having special definition in the embodiment of the present invention.
Currently, wafer bonding process specifically how, need related to whole wafer bonding process by experienced engineer
The understanding of the setting of parameter obtains.For example, how much (such as Fig. 1 a be bonded in inner ring for the first wafer 10 and the second wafer 20
It is shown), the first wafer 10 and 20 centre circle of the second wafer be bonded to where (as shown in Figure 1 b), the first wafer 10 and the second wafer
Distance between 20 corresponding positions is how many (as illustrated in figure 1 c), and whether the center of the first wafer 10 and the second wafer 20 is aligned (such as
Shown in Fig. 1 d), these require by experienced engineer to the understanding of the setting of whole wafer bonding process relevant parameter Lai
It obtains.
The invention proposes a kind of slits that two wafers for being projected to bonding using electromagnetic wave are formed to be formed by diffraction
Pattern, to be detected to wafer bonding process.
Fig. 2 is the schematic three dimensional views of the wafer bonding device of some embodiments of the invention.Fig. 3 is some embodiments of the invention
Wafer bonding device along line A-A diagrammatic cross-section.Fig. 4 is the second card of the wafer bonding device of some embodiments of the invention
The schematic diagram of disk and diffraction module.It should be noted that diffraction module and parsing module are not shown in Fig. 2 and Fig. 3, in Fig. 4 not
First chuck is shown.In conjunction with shown in reference Fig. 2, Fig. 3 and Fig. 4, wafer bonding device 100 includes the first chuck 110, the second chuck
120, diffraction module 130 and parsing module 140.
First chuck 110 and the second chuck 120 are oppositely arranged, and can be moved toward one another, to drive the first wafer 10 and the
Two wafers 20 move toward one another, and realize wafer bonding.In an optional embodiment, the first chuck 110 be can be fixed, and second
Chuck 120 can be moved towards the first chuck 110.In an optional embodiment, the second chuck 120 be can be fixed, the
One chuck 110 can be moved towards the second chuck 120.In an optional embodiment, the first chuck 110 and the second chuck 120
Movement can be directed towards.
First chuck 110 can be used for keeping (hold) first wafer 10.In some embodiments, the first chuck 110 can
To be the chuck of negative-pressure type, electrostatic.Specifically, the first chuck 110 of negative-pressure type can be by applying the first wafer 10
Negative pressure makes the first wafer 10 towards the pressure of the one side of the first chuck 110 less than the atmosphere that 10 another side of the first wafer is born
Pressure, so that the first wafer 10 is adsorbed on the first chuck 110.In some embodiments, in bonding process, the first chuck
110 can also one or more regions (such as middle section) to the first wafer 10 apply positive pressure so that 10 quilt of the first wafer
The region for applying positive pressure outwardly protrudes, in order to realize bonding.
Second chuck 120 can be used for keeping the second wafer 20.In some embodiments, the second chuck 120 can be negative
The chuck of die mould, electrostatic.Specifically, the second chuck 120 of negative-pressure type can be made by applying negative pressure to the second wafer 20
Second wafer 20 towards the second chuck 120 one side pressure less than the atmospheric pressure that 20 another side of the second wafer is born, from
And the second wafer 20 is adsorbed on the second chuck 120.In some embodiments, in bonding process, the second chuck 120 may be used also
Apply positive pressure with one or more regions (such as middle section) to the second wafer 20, so that the second wafer 20 is applied positive pressure
Region outwardly protrude, in order to realize bonding.In general, the protrusion of the raised zones of the first wafer 10 and the second wafer 20
Region is correspondingly arranged.That is, in bonding process, the protrusion of the raised zones of the first wafer 10 and the second wafer 20
Region contacts with each other at first.
Diffraction can occur for the projection of gap 30 that diffraction module 130 can be formed towards the first wafer 10 and the second wafer 20
Electromagnetic wave, and acquire the diffraction pattern of formation.Specifically, diffraction module 130 may include electromagnetic wave projecting unit 131 and figure
As acquisition unit 132.Electromagnetic wave can be projected to shape between the first wafer 10 and the second wafer 20 by electromagnetic wave projecting unit 131
At gap 30.Image acquisition units 132 can receive the electromagnetic wave across gap 30, generates the image comprising diffraction pattern and believes
Number.In some embodiments, the electromagnetic wave propagation direction that electromagnetic wave projecting unit 131 projects can be protected with the first chuck 110
The surface and/or the second chuck 120 for holding the first wafer 10 keep the surface of the second wafer 20 parallel, to reduce the resistance of propagation path
Hinder, receives the electromagnetic wave across gap 30 conducive to image acquisition units 132.It is appreciated that in order to realize diffraction, electromagnetism well
The wavelength of wave needs the width greater than gap 30.Preferably, the wavelength of electromagnetic wave can be twice or more of the width in gap 30.
In some embodiments, the electromagnetic wave that electromagnetic wave projecting unit 131 is projected can be light wave.The light wave for example may be used
Think infrared light, visible light, ultraviolet light, it is therefore preferable to infrared light.
Fig. 5 is the schematic diagram of the electromagnetic wave projecting unit of some embodiments of the invention.Refering to what is shown in Fig. 5, electromagnetic wave projects
Unit 131 may include light source 131a and the first lens 131b.The light that light source 131a is issued is after the first lens 131b transformation, shape
At directional light, then it is projected to gap 30.Preferably, light source 131a can be coherent light light source, such as laser light source.First lens
131b can be any form of lens or lens group, such as concavees lens, convex lens, planoconvex lens, plano-concave mirror etc. or its any group
It closes.
In some embodiments, the light wave that electromagnetic wave projecting unit 131 projects can be rectangular light beam.Preferably, the square
Shaped light beam has the table for keeping the surface of the first wafer 10 and/or the second chuck 120 to keep the second wafer 20 with the first chuck 110
The parallel side in face, which is preferably larger or equal than the diameter of the first wafer 10 and/or the second wafer 20, so that the rectangular light beam
Gap 30 can completely be covered.
Fig. 6 is the schematic diagram of the image acquisition units of some embodiments of the invention.Refering to what is shown in Fig. 6, image acquisition units
132 may include the second lens 132a and imaging sensor 132b.Across gap 30 light wave through the second lens 132a transformation after,
Diffraction pattern is formed on imaging sensor 132b.Diffraction pattern is converted to electric signal by imaging sensor 132b, to generate figure
As signal.Second lens 132a can be any form of lens or lens group, such as concavees lens, convex lens, planoconvex lens, plano-concave
Mirror etc., or any combination thereof.Imaging sensor 132b can for photosensitive coupling element (charge-coupled device,
CCD), complementary metal oxide semiconductor CMOS active pixel sensor (CMOS Active pixel sensor) etc..Preferably,
Imaging sensor 132b can be set in the focal plane of the second lens 132a.
With continued reference to shown in Fig. 2, Fig. 3 and Fig. 4, the first chuck 110 may include multiple first groove 110a.One diffraction
The electromagnetic wave projecting unit 131 and image acquisition units 132 that module 130 includes can be set in two opposite the first grooves
In 110a.Similarly, the second chuck 120 may include multiple second groove 120a.The electromagnetic wave that one diffraction module 130 includes
Projecting unit 131 and image acquisition units 132 can be set in two opposite the second groove 120a.It should be noted that
First groove 110a and the second groove 120a are oppositely arranged.Due to by electromagnetic wave projecting unit 131 and image acquisition units
132 are arranged in the first groove 110a and the second groove 120a, when to the first wafer 10 and the second wafer 20 implementation wafer bonding
When, electromagnetic wave projecting unit 131 and image acquisition units 132 will not interfere the opposite fortune of the first chuck 110 and the second chuck 120
It is dynamic.
Although wafer bonding device 100 includes spreading out for two orthogonal settings in Fig. 2, Fig. 3 and embodiment shown in Fig. 4
Module 130 is penetrated, it is to be understood that, wafer bonding device 100 may include a diffraction module 130 or more than two diffraction
Module 130, the present invention does not limit this.
Parsing module 140 can determine the first wafer 10 and second according to the picture signal that image acquisition units 132 generate
The relative position of wafer 20.
In some embodiments, parsing module 140 can determine the first wafer 10 and the second wafer 20 according to picture signal
The distance of corresponding position in the first direction dl, that is, the width of slit 30 at this location.Wherein, first direction D1 is vertical
Directly the surface of first wafer 10 and/or the second chuck 120 is kept to keep the surface of second wafer 20 in the first chuck 110
Direction.
Fig. 7 is the schematic diagram of the single slit diffraction of some embodiments of the invention.In conjunction with shown in reference Fig. 6 and Fig. 7, electromagnetic wave enters
When being mapped to slit 30, it may occur that diffraction is formed light and dark after the second lens 132a transformation on imaging sensor 132b
Striped, that is, diffraction pattern.Assuming that the width of slit 30 is a, between the second lens 132a and imaging sensor 132b
Distance is f, and the wavelength of electromagnetic wave is λ, and kth grade dark fringe center p is at a distance from two fringe center O of zero level are as follows:
Kth grade bright fringes center p is at a distance from two fringe center O of zero level are as follows:
Wherein, k=± 1, ± 2 ....The width a of slit 30 can be back-calculated to obtain by formula (1) and/or formula (2), it can
The width a of slit 30 is determined according to diffraction pattern, that is, determines that the first wafer 10 and 20 corresponding position of the second wafer exist
Distance on first direction D1.
Fig. 8 a is the status diagram of the wafer bonding device of one embodiment of the invention.Fig. 8 b is one embodiment of the invention
The schematic diagram of diffraction pattern in the state that wafer bonding device is shown in Fig. 8 a.Fig. 8 c be in diffraction pattern shown in Fig. 8 b
The intensity schematic diagram of line B-B.In conjunction with shown in reference Fig. 8 a, Fig. 8 b and Fig. 8 c, it is brilliant that electromagnetic wave is projected to the first wafer 10 and second
After the slit 30 that circle 20 is formed, imaging sensor 132b can obtain diffraction pattern as shown in Figure 8 b.It should be noted that figure
Diffraction pattern shown in 8b is schematically, not show that the intensity (i.e. bright dark degree) and width of striped.Shown in Fig. 8 b
Diffraction pattern line B-B at, there is intensity as shown in Figure 8 c, have that width is larger and intensity highest zero in middle position
Grade bright fringes, is respectively provided with the secondary bright fringes that width is smaller and brightness is weaker, another two striped in the bistriate two sides of zero level
Between have dark fringe.
After parsing module 140 gets diffraction pattern shown in such as Fig. 8 b, which is analyzed
To obtain kth grade dark fringe center p and two fringe center O distance x of zero level, the width of slit 30 can be calculated by substituting into formula (1)
Degree, that is, can determine the distance d1 of the first wafer 10 and 20 corresponding position of the second wafer in the first direction dl.
In some embodiments, parsing module 140 can determine the first wafer 10 and the second wafer 20 according to picture signal
The width being bonded.
Fig. 9 a is the status diagram of the wafer bonding device of one embodiment of the invention.Fig. 9 b is one embodiment of the invention
The schematic diagram of diffraction pattern in the state that wafer bonding device is shown in Fig. 9 a.In conjunction with shown in reference Fig. 9 a and Fig. 9 b, electromagnetism
After wave is projected to the slit 30 that the first wafer 10 and the second wafer 20 are formed, imaging sensor 132b can be obtained as shown in figure 9b
Diffraction pattern.Since the first wafer 10 and the second wafer 20 have had partial region to be bonded, in the part being bonded, electricity
Magnetic wave can not penetrate, and therefore, diffraction pattern has one or more phaeodiums.It should be noted that diffraction pattern shown in Fig. 9 b
It is schematically, not show that the intensity (i.e. bright dark degree) and width of striped.
After parsing module 140 gets diffraction pattern shown in such as Fig. 9 b, which is analyzed, it can be with
Obtain width d3 of the phaeodium on 30 direction of slit.According to projection relation, parsing module 140 can be calculated to obtain by width d3
The width d2 that one wafer 10 and the second wafer 20 have been bonded.In some embodiments, if the first wafer 10 and the second wafer 20 are
It is bonded by center, after calculating the width d2 being bonded, according to the diameter of the first wafer 10 and the second wafer 20
The width d2 being bonded, can both calculate the width that is not bonded also how many.
It should be understood that still there is slit 30 for the region that the first wafer 10 and the second wafer 20 are not bonded.It can be with
By to pass through slit 30 electromagnetic waveforms at diffraction pattern analyzed to obtain the width of slit 30.
In some embodiments, parsing module 140 can determine the first wafer 10 and the second wafer 20 according to picture signal
Offset in a second direction d 2.Wherein, second direction D2 be parallel to the first chuck keep the first wafer 10 surface and/or
Second chuck 120 keeps the direction on the surface of the second wafer 20.Specifically, with reference to Fig. 1 d, when the first wafer 10 and second is brilliant
When circle 20 deposits offset in a second direction, the center misalignment of the first wafer 10 and the second wafer 20, it is not right that slit 30 has
The bending of title.Correspondingly, electromagnetic wave incident also has asymmetric bending to slit 30, the diffraction pattern of formation.Parsing module
140 can analyze bending asymmetric in diffraction pattern, and available first wafer 10 and the second wafer 20 are second
Offset on the D2 of direction.
In some embodiments, wafer bonding device 100 can determine that the first wafer 10 and second is brilliant at multiple time points
The relative position of circle 20.During wafer bonding, pass through first wafer determining at multiple time points of wafer bonding device 100
10 and second wafer 20 relative position, it can obtain the dynamic process of wafer bonding.
Figure 10 is the flow diagram of the detection method of the wafer bonding process of some embodiments of the invention.With reference to Figure 10 institute
Show, the detection method 200 of wafer bonding process can detecte the bonding process of the first wafer and the second wafer comprising:
Step 210: acquisition electromagnetic wave is projected to the gap formed between the first wafer and the second wafer and is formed by diffraction
Pattern；
Step 220: the relative position of the first wafer and the second wafer is determined according to diffraction pattern.
In some embodiments, step 220 may include: to determine that the first wafer and the second wafer are corresponding according to diffraction pattern
The distance of position in a first direction, first direction are surface and/or the second card that the first wafer is kept perpendicular to the first chuck
Disk keeps the direction on the surface of the second wafer.
In some embodiments, step 220 may include: to determine the first wafer and the second wafer key according to diffraction pattern
The width of conjunction.
In some embodiments, step 220 may include: to determine the first wafer and the second wafer according to diffraction pattern
Offset on two directions, second direction are to be parallel to the first chuck the surface of the first wafer and/or the second chuck is kept to keep the
The direction on the surface of two wafers.
In some embodiments, to may include electromagnetic wave be projected to the first crystalline substance along third direction and fourth direction to diffraction pattern
The gap formed between round and the second wafer is formed by diffraction pattern, and third direction and fourth direction are orthogonal, and parallel
The direction on the surface of the first wafer and/or the surface of the second chuck the second wafer of holding is kept in the first chuck.
In some embodiments, the detection method 200 of wafer bonding process obtains diffraction pattern, and root at multiple time points
The diffraction pattern obtained according to different time points determines the relative position of the first wafer and the second wafer respectively.
Although the present invention is described with reference to current specific embodiment, those of ordinary skill in the art
It should be appreciated that above embodiment is intended merely to illustrate the present invention, can also make in the case where no disengaging spirit of that invention
Various equivalent change or replacement out, therefore, as long as to the variation of above-described embodiment, change in spirit of the invention
Type will all be fallen in the range of following claims.
Claims (21)
1. a kind of wafer bonding device, comprising:
First chuck is suitable for keeping the first wafer；
Second chuck is suitable for keeping the second wafer, and is oppositely arranged with first chuck；
At least one diffraction module, the diffraction module include:
Electromagnetic wave projecting unit, suitable for electromagnetic wave is projected to the seam formed between first wafer and second wafer
Gap；And
Image acquisition units are believed suitable for receiving the electromagnetic wave across the gap with generating the image comprising diffraction pattern
Number；And
Parsing module, suitable for determining the relative position of first wafer and second wafer according to described image signal.
2. wafer bonding device according to claim 1, which is characterized in that the parsing module is suitable for according to described image
Signal determines the distance of first wafer and the second wafer corresponding position in a first direction, and the first direction is vertical
Directly the surface of first wafer and/or second chuck is kept to keep the surface of second wafer in first chuck
Direction.
3. wafer bonding device according to claim 1, which is characterized in that the parsing module is suitable for according to described image
Signal determines the width that first wafer and second wafer have been bonded.
4. wafer bonding device according to claim 1, which is characterized in that the parsing module is suitable for according to described image
Signal determines the offset of first wafer and second wafer in a second direction, and the second direction is described to be parallel to
First chuck keep the surface of first wafer and/or second chuck keep second wafer surface direction.
5. wafer bonding device according to claim 1, which is characterized in that first chuck includes multiple first recessed
Slot, the electromagnetic wave projecting unit and described image acquisition unit are set in first groove of opposite two.
6. wafer bonding device according to claim 1, which is characterized in that second chuck includes multiple second recessed
Slot, the electromagnetic wave projecting unit and described image acquisition unit are set in second groove of opposite two.
7. wafer bonding device according to claim 1, which is characterized in that the electromagnetic wave projecting unit projects described
Electromagnetic wave is light wave.
8. wafer bonding device according to claim 7, which is characterized in that the electromagnetic wave projecting unit include light source and
First lens, the light that the light source issues form directional light after first lens transformation.
9. wafer bonding device according to claim 8, which is characterized in that the light source is relevant radiant.
10. wafer bonding device according to claim 7, which is characterized in that the light of the electromagnetic wave projecting unit projection
Wave is rectangular light beam, the rectangular light beam and first chuck keep first wafer surface and/or second card
The side that disk keeps the surface of second wafer parallel is greater than or equal to the straight of first wafer and/or second wafer
Diameter.
11. wafer bonding device according to claim 7, which is characterized in that described image acquisition unit includes second saturating
Mirror and imaging sensor, the light wave across the gap are formed in described image sensor after second lens transformation
The diffraction pattern is converted into electric signal by the diffraction pattern, described image sensor, to generate described image signal.
12. wafer bonding device according to claim 11, which is characterized in that described image sensor is set to described
The focal plane of two lens.
13. wafer bonding device according to claim 1, which is characterized in that the institute of the electromagnetic wave projecting unit projection
It states electromagnetic wave propagation and is oriented parallel to surface and/or second chuck guarantor that first chuck keeps first wafer
Hold the surface of second wafer.
14. wafer bonding device according to claim 1, which is characterized in that the wafer bonding device includes orthogonal sets
Two set the diffraction module.
15. wafer bonding device according to claim 1, which is characterized in that the wafer bonding device is suitable for multiple
Time point determines the relative position of first wafer and second wafer.
16. a kind of detection method of wafer bonding process, is adapted to detect for the bonding process of the first wafer and the second wafer, the inspection
Survey method includes:
Acquisition electromagnetic wave is projected to the gap formed between first wafer and second wafer and is formed by diffraction pattern；
The relative position of first wafer and second wafer is determined according to the diffraction pattern.
17. the detection method of wafer bonding process according to claim 16, which is characterized in that according to the diffraction pattern
The relative position for determining first wafer and second wafer includes:
The distance of first wafer and the second wafer corresponding position in a first direction is determined according to the diffraction pattern,
The first direction is that the surface of first wafer and/or the second chuck is kept to keep second crystalline substance perpendicular to the first chuck
The direction on round surface.
18. the detection method of wafer bonding process according to claim 16, which is characterized in that according to the diffraction pattern
The relative position for determining first wafer and second wafer includes:
The width that first wafer and second wafer have been bonded is determined according to the diffraction pattern.
19. the detection method of wafer bonding process according to claim 16, which is characterized in that according to the diffraction pattern
The relative position for determining first wafer and second wafer includes:
The offset of first wafer and second wafer in a second direction is determined according to the diffraction pattern, described second
Direction is the surface for being parallel to the first chuck and the surface of first wafer and/or the second chuck being kept to keep second wafer
Direction.
20. the detection method of wafer bonding process according to claim 16, which is characterized in that the diffraction pattern includes
The electromagnetic wave is projected to the gap formed between first wafer and second wafer along third direction and fourth direction
It is formed by diffraction pattern, the third direction and the fourth direction are orthogonal, and each parallel to described in the holding of the first chuck
The surface of first wafer and/or the second chuck keep the direction on the surface of second wafer.
21. the detection method of wafer bonding process according to claim 16, which is characterized in that the detection method is more
A time point obtains the diffraction pattern, and determines that described first is brilliant respectively according to the diffraction pattern that different time points obtain
Round and second wafer relative position.
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