CN105070201B - Alignment device for the Moire fringe of lithographic equipment - Google Patents
Alignment device for the Moire fringe of lithographic equipment Download PDFInfo
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- CN105070201B CN105070201B CN201510428736.3A CN201510428736A CN105070201B CN 105070201 B CN105070201 B CN 105070201B CN 201510428736 A CN201510428736 A CN 201510428736A CN 105070201 B CN105070201 B CN 105070201B
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Abstract
A kind of Moire fringe alignment device for lithographic equipment, including lighting source, the 3rd quarter wave plate, polarization splitting prism, the first quarter wave plate, preceding group of 4f lens, spatial filter, rear group of 4f lens groups, detector, the second quarter wave plate and triangular prism and data processor.The same level diffracted beam of alignment mark is spatially separating as two parts using polarization splitting prism, respectively transformation beam and reference beam, transformation beam is put into skew in the certain angle of image-forming module pupil plane Space Rotating or the rotation laggard line position of 180 degree, after image-forming module, transformation beam and reference beam are imaged respectively, and Moire fringe is formed in image planes, when alignment mark produces position movement relative to alignment device, Moire fringe in image planes amplifies the amount of movement of alignment mark at double, Moire fringe is handled by detection system, obtain the amount of movement of alignment mark positional information, so as to carry out the position alignment of silicon chip.
Description
Technical field
The present invention relates to the alignment device of photoetching, particularly a kind of Moire fringe for lithographic equipment.
Background technology
In semiconductor integrated circuit manufacturing process, lithographic exposure apparatus is an important ring for whole industry, and chip is usual
Need to complete by multiple photolithographic exposure, ordinary circumstance, except first time exposes, other exposures are required for before exposure should
The figure of exposure layer carries out precision positions alignment with the figure of last time exposure layer, it is ensured that the alignment precision being aligned.
With advances in technology, photoetching resolution has evolved to 10-20 nanometer nodes, and now alignment precision typically will
Ask as 2-5nm, influenceing the factor of alignment precision includes the reseting precision of silicon chip deformation, work stage and mask platform, mask and silicon chip
Alignment precision etc., the alignment precision of wherein mask and silicon chip is an important factor.
For projection exposure litho machine, the position alignment between mask and silicon chip typically uses coaxial+off-axis mode, i.e.,
Using the alignment mark in work stage as intermediate medium, by coaxial alignment, i.e., on the alignment mark and work stage on mask
Alignment mark is aligned, and establishes mask and the position coordinates of work stage；By off-axis alignment, i.e., alignment mark on silicon chip with
Alignment mark in work stage is aligned, and establishes silicon chip and the position coordinates of work stage, so that it is determined that the position of mask and silicon chip
Coordinate is put, to realize mask-position of silicon wafer alignment, as shown in Figure 1.
A kind of self-reference interference is given in existing patent (US7564534B2, CN102402141A) to Barebone, is such as schemed
Shown in 2, the alignment system principle is by as rotating device, realizing the two corrugated 180 degree rotations from alignment mark diffraction light
Overlying interference, the signal intensity after pupil plane detection interference, or planar survey image feature is being imaged, pass through signal point
Analyse to determine the positional information of alignment mark.In the alignment device, the different level diffracted beams for being utilized respectively alignment mark enter
Row alignment mark position measurement, such as 1 order diffraction light beam, alignment mark are moved 1 cycle, registration signal produces 2 cycles
Position skew, registration signal is handled, alignment mark position alignment is carried out, but for there is higher alignment precision requirement
For lithographic equipment, this method alignment precision is limited.
The content of the invention
In order to solve the problems, such as the alignment precision of above-mentioned prior art, the present invention provides a kind of More for lithographic equipment
The alignment device of striped, self-reference Moire fringe caused by the device can at double or tens times of ground are by the movement of alignment mark
Position quantity amplify, thus can more accurate measurement markers positional information, there is higher alignment precision.
The technical solution of the present invention is as follows：
A kind of alignment device of Moire fringe for lithographic equipment, its feature are that the device includes lighting source, edge
The lighting source output beam direction is group before the 3rd quarter wave plate, polarization splitting prism, the first quarter wave plate, 4f lens successively,
It is spatial filter, rear group of 4f lens groups and detector successively on the right side of described polarization splitting prism, described inclined
The shake left side of Amici prism is the second quarter wave plate and triangular prism successively, rear group of preceding group of described 4f lens and 4f lens groups
Form 4f lens groups, described detector is located at rear group of back focal plane of described 4f lens groups, described detector it is defeated
Go out the input of terminating data processor.
Described lighting source is multi wave length illuminating source, and its output beam is linearly polarized light.
Described detector is CCD.
The spatial filter is variable filter.
A kind of alignment device of Moire fringe for lithographic equipment, its feature are that the device includes lighting source, edge
The lighting source output beam direction is group before the 3rd quarter wave plate, polarization splitting prism, the first quarter wave plate, 4f lens successively,
Top half on the right side of described polarization splitting prism is the first half-wave plate, the first birefringece crystal, the second half-wave successively
Piece, the latter half on the right side of described polarization splitting prism are the second birefringece crystal, are followed successively by spatial filter, 4f thereafter
Rear group of lens group and detector, it is the second quarter wave plate, field lens and reflection successively in the left side of described polarization splitting prism
Rear group of composition 4f lens group of mirror, preceding group of described 4f lens and 4f lens groups, described detector are located at described 4f lens
Rear group of back focal plane of group, the input of the output termination data processor of described detector.
Described lighting source is multi wave length illuminating source, and its output beam is linear polarization.
Described detector is CCD.
The spatial filter is variable filter.
Described field lens and speculum can be replaced with right-angle prism.
The diffracted beam of alignment mark is spatially separating as transformation beam and ginseng by the alignment device by polarization splitting prism
Light beam is examined, by triangular prism by the certain angle of transformation beam Space Rotating, then by lens by transformation beam and reference
Light beam interference imaging simultaneously, has certain angle between the interference fringe formed due to two groups of diffracted beams on imaging surface, thus
Moire fringe is formed in image planes, this Moire fringe is moved with the movement of alignment mark, and the position of alignment mark is moved
Dynamic amplification, the movement for measuring Moire fringe can determine that the positional information of alignment mark.The Moire fringe formed due to diffracted beam
The position amount of movement of alignment mark can be carried out at double or tens times are amplified, thus can more accurately measure alignment mark
Positional information.
Or the diffracted beam of alignment mark can also be spatially separating to become by the alignment device by polarization splitting prism
Light beam and reference beam are changed, transformation beam is spatially produced by displacement by birefringece crystal, then will be referred to by lens
Light beam and the transformation beam while interference imaging for producing displacement, the interference fringe formed due to two groups of diffracted beams on imaging surface
Cycle is of different sizes, thus self-reference Moire fringe is formed in image planes, and this Moire fringe moves with the movement of alignment mark
It is dynamic, and amplification is moved into the position of alignment mark, so as to determine the position of alignment mark by measuring the movement of Moire fringe
Information, because Moire fringe that diffracted beam is formed can be carried out the position amount of movement of alignment mark at double or tens times
Amplification, thus can more accurately measure the positional information of alignment mark.
The illuminating bundle of two or more sets different wave lengths is used in above-mentioned alignment device, to improve the technique of alignment device
Adaptability, improve the contrast of Moire fringe.Simultaneously according to technique needs, using the different diffraction time light beam of alignment mark,
To improve alignment precision and Technological adaptability.
Explanation in detailed content reference implementation example.
The technique effect of the present invention is as follows：
The present invention can at double or the shift position of alignment mark amount is put on tens times of ground using self-reference Moire fringe
Greatly, thus can more accurate measurement markers positional information, the present invention is on the basis of existing patent, by optimizing structure
And alignment methods, the alignment precision higher than in referenced patent can be obtained.
Brief description of the drawings
Fig. 1 is mask silicon wafer alignment procedures schematic diagram
Fig. 2 is existing patent alignment principles schematic diagram
Fig. 3 is the structural representation of alignment device embodiment 1 of the present invention
Fig. 4 is the triangular prism structure schematic diagram of alignment device embodiment 1 of the present invention
Fig. 5 is the frequency plane diffracted beam position view of alignment device embodiment 1 of the present invention
Fig. 6 is Moire fringe schematic diagram caused by alignment device embodiment 1 of the present invention
Fig. 7 is the structural representation of alignment device embodiment 2 of the present invention
Fig. 8 is the birefringece crystal light channel structure schematic diagram of alignment device embodiment 2 of the present invention
Fig. 9 is the frequency plane diffracted beam position view of alignment device embodiment 2 of the present invention
Figure 10 is Moire fringe schematic diagram caused by alignment device embodiment 2 of the present invention
Embodiment
With reference to embodiment and accompanying drawing, the invention will be further described, but should not limit the present invention's with this embodiment
Protection domain.
Fig. 3 is the structural representation of Moire fringe alignment device embodiment 1 of the present invention.As seen from the figure, the present invention is used for light
Carve the alignment device embodiment 1 of the Moire fringe of equipment, including lighting source 101, along the lighting source output beam direction according to
Secondary is to organize 105 before the 3rd quarter wave plate 110, polarization splitting prism 103, the first quarter wave plate 104,4f lens, in described polarization
The right side of Amici prism 103 is spatial filter 111, rear group 112 of 4f lens groups and detector 113 successively, described inclined
The shake left side of Amici prism 103 is the second quarter wave plate 108 and triangular prism 109 successively, and 105 and 4f is organized before described 4f lens
Rear group 112 composition 4f lens group of lens group, described detector 113 are located at the rear burnt flat of rear group of described 4f lens groups
Face, the input of the output termination data processor (not shown) of described detector 113.
Lighting source 101 provides the illuminating bundle 102 of parallel linear polarization, and the illuminating bundle 102 passes through polarization spectro rib
Mirror 103 and crystallographic axis angle are 11.25 degree of the first quarter wave plate 104, and 105 alignment marks for being irradiated to silicon chip 107 are organized before 4f lens
On 106, this alignment mark 106 is optical grating construction, and diffraction occurs on alignment mark 106 for light beam, such as diffraction time is 1-7
Level, diffracted beam is by organizing 105 and being to become after 11.25 degree of the first quarter wave plate 104 again by crystallographic axis angle before 4f lens groups
Enter polarization splitting prism 103 for circularly polarized light, half reflection and half transmission, i.e. parallel polarization states are carried out by polarization splitting prism 103
Beam component (reference beam) pass through polarization splitting prism 103, the beam component (transformation beam) of perpendicular polarisation state is polarized
Amici prism 103 reflects, and reflected light is converted to circular polarization state after crystalline axis direction is 22.5 degree of the second quarter wave plate 108, enters
Enter triangular prism 109, the positive level diffracted beam of alignment mark and negative level diffracted beam be in the Y direction after triangular prism 109
Location swap, while the diffracted beam of two levels produces position in opposite direction in Z-direction due to the effect of triangular prism 109
Skew (detailed light channel structure figure is with reference to the explanation in the Fig. 7 of figure 6) is put, crystalline substance is again passed by by the diffracted beam of triangular prism 109
After direction of principal axis is 22.5 degree of the second quarter wave plate 108, light polarization change into it is parallel, and completely through polarization splitting prism
103, after spatial filter 111, after the diffracted beams of two parallel polarization states organizes 112 after 4f lens groups, imaging
On detector 113.Second half (reference beam, parallel polarization states component) of the diffracted beam of alignment mark 106 is through polarization
After Amici prism 103, into the 3rd quarter wave plate 110 that crystalline axis direction is 22.5 degree, crystalline axis direction is the 3 1/4 of 22.5 degree
The surface of wave plate 110 is coated with reflectance coating, after reflection, after the 3rd quarter wave plate 110 for being 22.5 degree again by crystalline axis direction,
Polarization state is changed into vertically, after the reflection of polarization splitting prism 103, passes through rear group of spatial filter 111 and 4f lens groups
After 112, it is imaged on detector 113, the interference fringe direction that reference beam and transformation beam are formed in image planes exists certain
Angle, so as in image planes formed Moire fringe image.
In figure 3, other diffraction times of alignment mark 106 are identical with the light channel structure principle that 1 order diffraction level is passed through,
It is identical with X/Y plane in the light channel structure principle of YZ planes, so as to play both direction multilevel alignment mark position alignment.
Fig. 4 is the structural representation of triangle reflecting prism 109 used in the alignment device light channel structure of embodiment 1, is respectively this
The top view (left side) and side view (right side) of triangular prism 109, this drift angle of triangle reflecting prism 109 are right angle, and 4 sides have necessarily
Inclination angle, i.e. there are identical angle, such as 89 degree in face 1 and face 2 with respect to X/Y plane base, face 3 and the YZ planes base relatively of face 4
There are identical angle, such as 89 degree, so combine the light in Fig. 1, this triangle reflecting prism 109 is played in the Y side of X/Y plane
To incident+1R diffracted beams reflex to the position of -1R diffracted beams, and incident -1R diffracted beams reflex to+1R diffraction lights
The position of beam.In YZ planes, -1R the diffracted beams of outgoing with respect to+1R incident beams in Z-direction position translation, be equally emitted+
1R diffracted beams have identical but direction in Z-direction position translation, i.e. two beam emergent rays with respect to -1R incident beams with respect to the plane of incidence
Opposite displacement.
Fig. 5 be the diffracted beam of embodiment 1 in frequency plane position view, i.e. transformation beam and reference beam is in frequency plane
Relative position, transformation beam are to have a position offset in YZ planes with respect to reference beam, and the size of position offset is by three
The inclination angle in four faces of corner reflection prism 108 determines.
Fig. 6 is the imaging schematic diagram that the diffracted beam of embodiment 1 organizes focal plane after 4f lens groups, transformation beam and reference beam
Organized after 4f lens on focal plane and form Moire fringe.The cycle d of Moire fringe determines by the angle theta of two groups of interference fringes, example
Such as, the cycle of two groups of interference fringes is p, then the cycle of Moire fringe is D=p/sin θ.With reference to the optical path analysis in Fig. 1, when right
When fiducial mark remembers (grating) shift position a, shift position a round about, More are distinguished in the imaging of transformation beam and reference beam
The amount of movement of striped is 2a/sin θ
Fig. 7 is the structural representation of Moire fringe alignment device embodiment 2 of the present invention.
Lighting source 101 provides the illuminating bundle 102 of parallel linear polarization, and illuminating bundle 102 passes through the 3rd quarter wave plate
110, polarization splitting prism 103 and crystallographic axis angle are 11.25 degree of the 3rd quarter wave plate 104, and organizing 105 before 4f lens is irradiated to silicon
On the alignment mark 106 of piece 107, this alignment mark 106 is optical grating construction, and diffraction occurs on alignment mark 106 for light beam, such as
Diffraction time is 1-7 levels, and diffracted beam is by organizing 105 and again by first that crystallographic axis angle is 11.25 degree before 4f lens groups
It is changed into circularly polarized light after quarter wave plate 104 and enters polarization splitting prism 103, it is semi-transparent to carry out half reflection by polarization splitting prism 103
Penetrate, i.e., the beam component (reference beam) of parallel polarization states passes through polarization splitting prism 103, the beam component of perpendicular polarisation state
(transformation beam) is reflected by polarization splitting prism 103, and reflected light is after crystalline axis direction is 22.5 degree of the second quarter wave plate 108
Circular polarization state is converted to, the positive level diffracted beam of alignment mark and negative level diffracted beam after field lens 201 and speculum 202
Location swap in the Y direction, after again passing by the second quarter wave plate 108 that crystalline axis direction is 22.5 degree, light polarization is changed into flat
OK, and completely through polarization splitting prism 103, positive level diffraction light such as+1R passes through the first half-wave that crystalline axis direction is 45 degree
After piece 203, polarization state is changed into vertical, produces displacement in the Y direction by light beam after birefringece crystal 204, is by crystalline axis direction
45 degree of the second half-wave plate 205 retrodeviates polarization state and changes into parallel, and negative level diffracted beam such as -1R passes through birefringece crystal 206
Rear is not to changing, and positive and negative level diffracted beam is after spatial filter 111, the diffracted beam of two parallel polarization states
After 4f lens groups after group 112, it is imaged on detector 113.Second half (reference light of the diffracted beam of alignment mark
Beam, parallel polarization states component) pass through polarization splitting prism 103 after, be 22.5 degree of the 3rd quarter wave plate 110 into crystalline axis direction,
Crystalline axis direction is that 22.5 degree of the surface of the 3rd quarter wave plate 110 is coated with reflectance coating, after reflection, is again by crystalline axis direction
After 22.5 degree of the 3rd quarter wave plate 110, polarization state is changed into vertically, and after the reflection of polarization splitting prism 103, negative level is spread out
Light such as -1T is penetrated after crystalline axis direction is 45 degree of the first half-wave plate 203, polarization state is changed into parallel, passes through birefringece crystal
Light beam does not produce displacement in the Y direction after 203, by crystalline axis direction be 45 degree of the second half-wave plate 205 retrodeviate polarization state change into it is vertical
Directly, positive level diffracted beam such as+1T is subjected to displacement in the Y direction after birefringece crystal 206, positive and negative level diffracted beam warp
After crossing spatial filter 111, after the diffracted beams of two perpendicular polarisation states organizes 112 after 4f lens groups, detection is imaged on
By after rear group 112 of spatial filter 111 and 4f lens groups, being imaged on detector 113, reference beam and change on device 113
Change the interference fringe direction that light beam is formed in image planes and certain angle be present, so as to form Moire fringe image in image planes.
In the figure 7, other diffraction times of alignment mark are identical with the light channel structure principle that 1 order diffraction level is passed through,
The light channel structure principle of YZ planes is identical with X/Y plane, so as to play both direction multilevel alignment mark position alignment.
As shown in figure 8, birefringece crystal light channel structure schematic diagram used by for the light channel structure of embodiment 2, converts light
Beam -1R is parallel polarization states, and the birefringece crystal for being relatively fixed crystalline axis direction is o light, and reference beam+1T is vertical polarization
State, the birefringece crystal for being relatively fixed crystalline axis direction are e light.Position offset Δ of the two-beam after birefringece crystal, partially
Shifting amount Δ and light beam wavelength, crystalline axis direction are relevant with birefringece crystal thickness.Transformation beam+1R and reference beam -1T light path knots
Structure is identical with foregoing description principle.
The diffracted beam of another plane in Fig. 8, i.e. YZ planes, optical principle are identical with foregoing description.
Fig. 9 be the diffracted beam of embodiment 2 in frequency plane position view, i.e., transformation beam with respect to reference beam in YZ planes
There is 180 degree rotation amount, and have a position translation, position translation amount and light beam wavelength, the thickness of crystalline axis direction and birefringece crystal
Degree and refractive index determine.
The relative position of 1 order diffraction optical beam transformation light beam and reference beam in frequency plane, other diffraction are illustrated in Fig. 9
Level principle is identical.
Figure 10 is the diffracted beam of embodiment 2 in the Moire fringe schematic diagram of the formation of image-forming objective lens image planes, reference beam+1T
The interference fringe that the cycle is P1 is formed with -1T, transformation beam+1R and -1R form the interference fringe that the cycle is P2, due to two groups of light
The polarization state of beam is mutually perpendicular to, therefore two groups of interference fringes do not interfere each other, and simply light intensity is superimposed, so as in image planes
Form Moire fringe.For the cycle P of Moire fringe by the cycle P1 of two groups of interference fringes, P2 is related, for example, two groups of interference fringes
Cycle is P=P1 and P2 least common multiple, such as P1=8.8um, P2=8um, then P=88um, the amount of movement D of Moire fringe
=mark amount of movement d*2*P, i.e. amplification of the Moire fringe by the amount of movement of mark at double, so as to improve the alignment of alignment mark
Precision.Focal length X alignment light sources wavelength, diffracted beam are organized wherein after fringe period P1 (P2)=4f lens groups in frequency plane
Distance.
The Moire fringe of other diffraction times of alignment mark is identical with 1 grade of principle in Figure 10.
(supplementing the alignment methods with reference to accompanying drawing).
Claims (5)
- A kind of 1. alignment device of Moire fringe for lithographic equipment, it is characterised in that the device includes lighting source (101), It is the 3rd quarter wave plate (110), polarization splitting prism (103), the 1st successively along lighting source (101) the output beam direction Group (105) before wave plate (104), 4f lens, the top half on the right side of described polarization splitting prism (103) is first successively Half-wave plate (203), the first birefringece crystal (204), the second half-wave plate (205), on the right side of described polarization splitting prism (103) The latter half be the second birefringece crystal (206), be followed successively by spatial filter (111), rear group (112) of 4f lens groups thereafter It is the second quarter wave plate (108), field lens (201) successively in the left side of described polarization splitting prism (103) with detector (113) With speculum (202), rear group (112) of described 4f lens preceding group (105) and 4f lens groups form 4f lens groups, described spy Survey the back focal plane that device (113) is located at rear group (112) of described 4f lens groups, the output termination of described detector (113) The input of data processor.
- 2. the alignment device of Moire fringe as claimed in claim 1, it is characterised in that described lighting source (101) is more ripples Long light source, its output beam are linear polarization.
- 3. the alignment device of Moire fringe as claimed in claim 1, it is characterised in that described detector (113) is CCD.
- 4. the alignment device of Moire fringe as claimed in claim 1, it is characterised in that the spatial filter (111) is variable Wave filter.
- 5. the alignment device of Moire fringe as claimed in claim 1, it is characterised in that described field lens (201) and speculum (202) replaced with right-angle prism.
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| CN106933046B (en) * | 2015-12-30 | 2019-05-03 | 上海微电子装备（集团）股份有限公司 | Device and survey calibration method for overlay error detection |
| CN108254935B (en) * | 2018-01-12 | 2020-06-05 | 合肥工业大学 | Method and equipment for adjusting alignment of visual line of polaroid and MSE (mean Square error) diagnostic system |
| CN112631090B (en) * | 2019-09-24 | 2022-09-27 | 长鑫存储技术有限公司 | Overlay mark and overlay error testing method |
| CN114690594A (en) * | 2020-12-31 | 2022-07-01 | 上海微电子装备（集团）股份有限公司 | Alignment device, photoetching machine and alignment method |
| CN114690595A (en) * | 2020-12-31 | 2022-07-01 | 上海微电子装备（集团）股份有限公司 | Alignment device, photoetching machine and alignment method |
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| EP1400859A3 (en) * | 2002-09-20 | 2009-07-01 | ASML Netherlands B.V. | Alignment system and methods for lithographic systems using at least two wavelengths |
| CN100587603C (en) * | 2007-08-20 | 2010-02-03 | 上海微电子装备有限公司 | Mask alignment marker and aligning method used for photo etching device |
| CN101281378B (en) * | 2008-05-15 | 2010-12-15 | 中国科学院光电技术研究所 | Nano photoetching alignment system |
| NL2007215A (en) * | 2010-09-08 | 2012-03-12 | Asml Netherlands Bv | Lithographic apparatus, device manufacturing method, and method of applying a pattern to a substrate. |
| CN102402140B (en) * | 2010-09-17 | 2014-02-19 | 上海微电子装备有限公司 | Alignment system |
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