CN105070201A - Moire fringe based alignment device for lithography equipment - Google Patents
Moire fringe based alignment device for lithography equipment Download PDFInfo
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- CN105070201A CN105070201A CN201510428736.3A CN201510428736A CN105070201A CN 105070201 A CN105070201 A CN 105070201A CN 201510428736 A CN201510428736 A CN 201510428736A CN 105070201 A CN105070201 A CN 105070201A
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Abstract
A moire fringe based alignment device for lithography equipment comprises an illumination light source, a third 1/4 wave plate, a polarization splitter prism, a first 1/4 wave plate, a front 4f lens group, a spatial filter, a back 4f lens group, a probe, a second 1/4 wave plate, a triangular prism and a data processor. By the aid of the polarization splitter prism, same-order diffraction light beam space of an alignment mark is divided into two parts, namely transformation beam and reference beam; the transformation beam rotates by a certain angle within a pupil plane of an imaging module or rotates by 180 degrees and then is shifted; the transformation beam and the reference beam are imaged respectively through the imaging module, and moire fringe is formed on an image surface; when the alignment mark shifts relative to the alignment device, movement amount of the alignment mark is multiplied through the moire fringe on the image surface; the moire fringe is processed by means of a detection system so that movement amount of position information of the alignment mark is acquired for achieving position alignment of silicon wafers.
Description
Technical field
The present invention relates to photoetching, particularly a kind of alignment device of the Moire fringe for lithographic equipment.
Background technology
In SIC (semiconductor integrated circuit) manufacture process, lithographic exposure apparatus is an important ring of whole industry, chip needs just can complete through repeatedly photolithographic exposure usually, generalized case, except first time exposure, other exposures all need before exposure by the figure of this exposure layer with last time exposure layer figure carry out precision positions and aim at, guarantee aimed at alignment precision.
Along with the progress of technology, photoetching resolution has developed into 10-20 nanometer nodes, be now 2-5nm to alignment precision General Requirements, the factor affecting alignment precision comprises the reseting precision of silicon chip distortion, work stage and mask platform, the alignment precision etc. of mask and silicon chip, wherein the alignment precision of mask and silicon chip is an important factor.
For projection exposure litho machine, position alignment between mask and wafer generally adopts coaxially+from axle mode, namely using the alignment mark in work stage as intermediate medium, pass through coaxial alignment, namely the alignment mark on mask is aimed at the alignment mark in work stage, sets up the position coordinates of mask and work stage; By off-axis alignment, the alignment mark namely on silicon chip is aimed at the alignment mark in work stage, sets up the position coordinates of silicon chip and work stage, thus determines the position coordinates of mask and wafer, realizes mask-position of silicon wafer and aims at, as shown in Figure 1.
Existing patent (US7564534B2, CN102402141A) give a kind of self-reference in and interfere alignment system, as shown in Figure 2, this alignment system principle is by picture whirligig, 180 degree, two corrugated realized from alignment mark diffraction light rotates overlying interference, signal intensity after pupil plane detection is interfered, or measure image feature at imaging surface, the positional information of alignment mark is determined by signal analysis.In this alignment device, time diffracted beam not at the same level of alignment mark is utilized to carry out alignment mark position measurement respectively, such as to 1 order diffraction light beam, alignment mark moves 1 cycle, registration signal produces the position skew in 2 cycles, processes, carry out alignment mark position alignment to registration signal, but for having the lithographic equipment of higher alignment precision requirement, the method alignment precision is limited.
Summary of the invention
In order to solve the problem of the alignment precision of above-mentioned prior art, the invention provides a kind of alignment device of the Moire fringe for lithographic equipment, the self-reference Moire fringe that this device produces can at double or tens times of ground the shift position of alignment mark amount is amplified, thus can the positional information of more accurate measurement markers, there is higher alignment precision.
Technical solution of the present invention is as follows:
A kind of alignment device of the Moire fringe for lithographic equipment, its feature is that this device comprises lighting source, the 3rd quarter wave plate successively along this lighting source output beam direction, polarization splitting prism, first quarter wave plate, group before 4f lens, spatial filter successively on the right side of described polarization splitting prism, rear group of 4f lens combination and detector, the second quarter wave plate and triangular prism successively in the left side of described polarization splitting prism, rear group of formation 4f lens combination of front group of described 4f lens and 4f lens combination, described detector is positioned at the back focal plane of rear group of described 4f lens combination, the input end of the output termination data processor of described detector.
Described lighting source is multi wave length illuminating source, and its output beam is linearly polarized light.
Described detector is CCD.
Described spatial filter is variable filter.
A kind of alignment device of the Moire fringe for lithographic equipment, its feature is that this device comprises lighting source, the 3rd quarter wave plate successively along this lighting source output beam direction, polarization splitting prism, first quarter wave plate, group before 4f lens, the first half on the right side of described polarization splitting prism is the first half-wave plate successively, first birefringece crystal, second half-wave plate, the latter half on the right side of described polarization splitting prism is the second birefringece crystal, thereafter spatial filter is followed successively by, rear group of 4f lens combination and detector, the second quarter wave plate successively in the left side of described polarization splitting prism, field lens and catoptron, rear group of formation 4f lens combination of front group of described 4f lens and 4f lens combination, described detector is positioned at the back focal plane of rear group of described 4f lens combination, the input end of the output termination data processor of described detector.
Described lighting source is multi wave length illuminating source, and its output beam is linear polarization.
Described detector is CCD.
Described spatial filter is variable filter.
Described field lens and catoptron can replace with right-angle prism.
The diffracted beam space of alignment mark is separated into transformation beam and reference beam by polarization splitting prism by this alignment device, by triangular prism by angle certain for transformation beam Space Rotating, then scioptics are by transformation beam and reference beam interference imaging simultaneously, certain angle is had due between the interference fringe that two groups of diffracted beams are formed on imaging surface, thus in image planes, Moire fringe is formed, this Moire fringe moves along with the movement of alignment mark, and amplification is moved in the position of alignment mark, the movement of measuring Moire fringe can determine the positional information of alignment mark.The position amount of movement of alignment mark can carry out at double or tens times of amplifications by the Moire fringe formed due to diffracted beam, thus can measure the positional information of alignment mark more accurately.
Or the diffracted beam space of alignment mark also can be separated into transformation beam and reference beam by polarization splitting prism by this alignment device, by birefringece crystal, transformation beam is spatially produced displacement, then scioptics are with reference to light beam and the transformation beam interference imaging simultaneously producing displacement, the fringe period formed on imaging surface due to two groups of diffracted beams varies in size, thus in image planes, self-reference Moire fringe is formed, this Moire fringe moves along with the movement of alignment mark, and amplification is moved in the position of alignment mark, thus the positional information of alignment mark is determined by the movement of measuring Moire fringe, the position amount of movement of alignment mark can carry out at double or the amplification of tens times by the Moire fringe formed due to diffracted beam, thus the positional information of alignment mark can be measured more accurately.
Adopt the illuminating bundle of two or more sets different wave lengths in above-mentioned alignment device, in order to improve the Technological adaptability of alignment device, improve the contrast of Moire fringe.Simultaneously according to technique needs, the order of diffraction time light beam adopting alignment mark different, improves alignment precision and Technological adaptability.
Explanation in detailed content reference example.
Technique effect of the present invention is as follows:
The present invention utilize self-reference Moire fringe can at double or tens times of ground the shift position of alignment mark amount is amplified, thus can the positional information of more accurate measurement markers, the present invention is on the basis of existing patent, by optimizing structure and alignment methods, can obtain than alignment precision higher in referenced patent.
Accompanying drawing explanation
Fig. 1 is mask silicon wafer alignment procedures schematic diagram
Fig. 2 is existing patent alignment principles schematic diagram
Fig. 3 is the structural representation of alignment device embodiment 1 of the present invention
Fig. 4 is the triangular prism structure schematic diagram of alignment device embodiment 1 of the present invention
Fig. 5 is the frequency plane diffracted beam position view of alignment device embodiment 1 of the present invention
Fig. 6 is the Moire fringe schematic diagram that alignment device embodiment 1 of the present invention produces
Fig. 7 is the structural representation of alignment device embodiment 2 of the present invention
Fig. 8 is the birefringece crystal light channel structure schematic diagram of alignment device embodiment 2 of the present invention
Fig. 9 is alignment device embodiment 2 frequency plane diffracted beam position view of the present invention
Figure 10 is the Moire fringe schematic diagram that alignment device embodiment 2 of the present invention produces
Embodiment
Below in conjunction with embodiment and accompanying drawing, the invention will be further described, but should not limit the scope of the invention with this embodiment.
Fig. 3 is the structural representation of Moire fringe alignment device embodiment 1 of the present invention.As seen from the figure, the present invention is used for the alignment device embodiment 1 of the Moire fringe of lithographic equipment, comprise lighting source 101, the 3rd quarter wave plate 110 successively along this lighting source output beam direction, polarization splitting prism 103, first quarter wave plate 104, group 105 before 4f lens, spatial filter 111 successively on the right side of described polarization splitting prism 103, rear group 112 and detector 113 of 4f lens combination, the second quarter wave plate 108 and triangular prism 109 successively in the left side of described polarization splitting prism 103, rear group 112 of front group 105, described 4f lens and 4f lens combination forms 4f lens combination, described detector 113 is positioned at the back focal plane of rear group of described 4f lens combination, the input end of the output termination data processor (not shown) of described detector 113.
Lighting source 101 provides the illuminating bundle 102 of parallel lines polarization state, this illuminating bundle 102 is first quarter wave plate 104 of 11.25 degree by polarization splitting prism 103 and crystallographic axis angle, before 4f lens, group 105 is irradiated on the alignment mark 106 of silicon chip 107, this alignment mark 106 is optical grating construction, diffraction is there is in light beam on alignment mark 106, such as the order of diffraction time is 1-7 level, diffracted beam is by organizing 105 and be become circularly polarized light after first quarter wave plate 104 of 11.25 degree to enter polarization splitting prism 103 again by crystallographic axis angle before 4f lens combination, be polarized Amici prism 103 and carry out half reflection and half transmission, namely the beam component (reference beam) of parallel polarization states is through polarization splitting prism 103, the beam component (transformation beam) of perpendicular polarisation state is polarized Amici prism 103 and reflects, reflected light is converted to circular polarization state after the second quarter wave plate 108 that crystalline axis direction is 22.5 degree, enter triangular prism 109, the positive level of alignment mark time diffracted beam and negative level time diffracted beam location swap in the Y direction after triangular prism 109, simultaneously the diffracted beam of two levels time is due to the effect of triangular prism 109, contrary position skew (detailed light channel structure figure is with reference to the explanation in figure 6 Fig. 7), direction is produced in Z-direction, through the diffracted beam of triangular prism 109 again after the second quarter wave plate 108 that crystalline axis direction is 22.5 degree, light polarization is changed into parallel, and completely through polarization splitting prism 103, after spatial filter 111, after the diffracted beam of two parallel polarization states organizes 112 after 4f lens combination, be imaged on detector 113.Second half (reference beam of the diffracted beam of alignment mark 106, parallel polarization states component) through after polarization splitting prism 103, enter the 3rd quarter wave plate 110 that crystalline axis direction is 22.5 degree, crystalline axis direction is that the 3rd quarter wave plate 110 surface of 22.5 degree is coated with reflectance coating, after reflection, be after the 3rd quarter wave plate 110 of 22.5 degree again by crystalline axis direction, polarization state is changed into vertically, after polarization splitting prism 103 reflects, after rear group 112 of spatial filter 111 and 4f lens combination, be imaged on detector 113, there is certain angle in the interference fringe direction that reference beam and transformation beam are formed in image planes, thus in image planes, form Moire fringe image.
In figure 3, other orders of diffraction of alignment mark 106 are secondary identical with the light channel structure principle of 1 order diffraction level time process, identical with XY plane in the light channel structure principle of YZ plane, thus play both direction multilevel alignment mark position alignment.
Fig. 4 is triangle reflecting prism 109 structural representation used in embodiment 1 alignment device light channel structure, distinguish vertical view (left side) and the side view (right side) of triangular prism 109 for this reason, this triangle reflecting prism 109 drift angle is right angle, there is certain pitch angle 4 sides, namely there is identical angle on XY plane relative to face 2 base in face 1, such as 89 degree, there is identical angle on YZ plane relative to face 4 base, face 3, such as 89 degree, light in such composition graphs 1, this triangle reflecting prism 109 plays the Y-direction in XY plane, incident+1R diffracted beam reflexes to the position of-1R diffracted beam, incident-1R diffracted beam reflexes to the position of+1R diffracted beam.In YZ plane ,+1R incident beam is in Z-direction position translation relatively for the-1R diffracted beam of outgoing, and the mutually p-1R incident beam of+1R diffracted beam of same outgoing is in Z-direction position translation, and namely two bundle emergent raies have identical but that direction is contrary displacement relative to the plane of incidence.
Fig. 5 is that embodiment 1 diffracted beam is at frequency plane position view, namely transformation beam and reference beam are at the relative position of frequency plane, transformation beam relative reference light beam is in YZ plane for there being a position offset, and the size of position offset is determined by the inclination angle in four faces of triangle reflecting prism 108.
Fig. 6 is the imaging schematic diagram that embodiment 1 diffracted beam organizes focal plane after 4f lens combination, and transformation beam and reference beam are organized on focal plane and formed Moire fringe after 4f lens.The cycle d of Moire fringe is determined by the angle theta of two groups of interference fringes, and such as, the cycle of two groups of interference fringes is p, then the cycle of Moire fringe is D=p/sin θ.Optical path analysis in composition graphs 1, as alignment mark (grating) shift position a, the imaging of transformation beam and reference beam is respectively to reverse direction shift position a, and the amount of movement of Moire fringe is 2a/sin θ.
Fig. 7 is the structural representation of Moire fringe alignment device embodiment 2 of the present invention.
Lighting source 101 provides the illuminating bundle 102 of parallel lines polarization state, illuminating bundle 102 is by the 3rd quarter wave plate 110, polarization splitting prism 103 and crystallographic axis angle are the 3rd quarter wave plate 104 of 11.25 degree, before 4f lens, group 105 is irradiated on the alignment mark 106 of silicon chip 107, this alignment mark 106 is optical grating construction, diffraction is there is in light beam on alignment mark 106, such as the order of diffraction time is 1-7 level, diffracted beam is by organizing 105 and be become circularly polarized light after first quarter wave plate 104 of 11.25 degree to enter polarization splitting prism 103 again by crystallographic axis angle before 4f lens combination, be polarized Amici prism 103 and carry out half reflection and half transmission, namely the beam component (reference beam) of parallel polarization states is through polarization splitting prism 103, the beam component (transformation beam) of perpendicular polarisation state is polarized Amici prism 103 and reflects, reflected light is converted to circular polarization state after the second quarter wave plate 108 that crystalline axis direction is 22.5 degree, the positive level of alignment mark time diffracted beam and negative level time diffracted beam location swap in the Y direction after field lens 201 and catoptron 202, again after the second quarter wave plate 108 that crystalline axis direction is 22.5 degree, light polarization is changed into parallel, and completely through polarization splitting prism 103, positive level time diffraction light such as+1R is after the first half-wave plate 203 that crystalline axis direction is 45 degree, polarization state becomes vertically, displacement is produced in the Y direction by light beam after birefringece crystal 204, retrodeviating polarization state through crystalline axis direction second half-wave plate 205 that is 45 degree changes into parallel, bear level time diffracted beam such as-1R through birefringece crystal 206 rear to not changing, positive and negative level time diffracted beam is after spatial filter 111, after the diffracted beam of two parallel polarization states organizes 112 after 4f lens combination, be imaged on detector 113.Second half (reference beam of the diffracted beam of alignment mark, parallel polarization states component) through after polarization splitting prism 103, enter the 3rd quarter wave plate 110 that crystalline axis direction is 22.5 degree, crystalline axis direction is that the 3rd quarter wave plate 110 surface of 22.5 degree is coated with reflectance coating, after reflection, be after the 3rd quarter wave plate 110 of 22.5 degree again by crystalline axis direction, polarization state is changed into vertically, after polarization splitting prism 103 reflects, negative level time diffraction light such as-1T is after the first half-wave plate 203 that crystalline axis direction is 45 degree, polarization state becomes parallel, displacement is not produced in the Y direction by light beam after birefringece crystal 203, retrodeviating polarization state through crystalline axis direction second half-wave plate 205 that is 45 degree changes into vertically, positive level time diffracted beam such as+1T is subjected to displacement in the Y direction after birefringece crystal 206, positive and negative level time diffracted beam is after spatial filter 111, after the diffracted beam of two perpendicular polarisation state organizes 112 after 4f lens combination, be imaged on detector 113 by after rear group 112 of spatial filter 111 and 4f lens combination, be imaged on detector 113, there is certain angle in the interference fringe direction that reference beam and transformation beam are formed in image planes, thus in image planes, form Moire fringe image.
In the figure 7, other orders of diffraction of alignment mark are secondary identical with the light channel structure principle of 1 order diffraction level time process, identical with XY plane in the light channel structure principle of YZ plane, thus play both direction multilevel alignment mark position alignment.
As shown in Figure 8, for the birefringece crystal light channel structure schematic diagram that embodiment 2 light channel structure adopts, transformation beam-1R is parallel polarization states, the birefringece crystal relatively fixing crystalline axis direction is o light, be perpendicular polarisation state with reference beam+1T, the birefringece crystal relatively fixing crystalline axis direction is e light.The position offset Δ of two-beam after birefringece crystal, offset Δ and light beam wavelength, crystalline axis direction is relevant with birefringece crystal thickness.Transformation beam+1R is identical with foregoing description principle with reference beam-1T light channel structure.
The diffracted beam of another plane in Fig. 8, i.e. YZ plane, optical principle is identical with foregoing description.
Fig. 9 is that embodiment 2 diffracted beam is at frequency plane position view, namely transformation beam relative reference light beam has 180 degree of rotation amounts in YZ plane, and having a position translation, position translation amount and light beam wavelength, the thickness of crystalline axis direction and birefringece crystal and refractive index determine.
Illustrate 1 order diffraction optical beam transformation light beam and the reference beam relative position at frequency plane in Fig. 9, other orders of diffraction time principle is identical.
Figure 10 is the Moire fringe schematic diagram of embodiment 2 diffracted beam in the formation of image-forming objective lens image planes, it is the interference fringe of P1 that reference beam+1T and-1T forms the cycle, it is the interference fringe of P2 that transformation beam+1R and-1R forms the cycle, because the polarization state of two groups of light beams is mutually vertical, therefore two groups of interference fringes do not interfere each other, just light intensity superposition, thus Moire fringe is formed in image planes.The cycle P of Moire fringe is by the cycle P1 of two groups of interference fringes, P2 is correlated with, such as, the cycle of two groups of interference fringes is the lowest common multiple of P=P1 and P2, such as P1=8.8um, P2=8um, then P=88um, the amount of movement D=of Moire fringe marks amount of movement d*2*P, and namely Moire fringe is by the amount of movement amplification at double of mark, thus improves the alignment precision of alignment mark.Wherein organize focal length X alignment light source wavelength, diffracted beam after fringe period P1 (P2)=4f lens combination in the distance of frequency plane.
The Moire fringe that in Figure 10, other orders of diffraction of alignment mark are secondary is identical with 1 grade of principle.
(supplementing alignment methods by reference to the accompanying drawings).
Claims (9)
1. the alignment device for the Moire fringe of lithographic equipment, it is characterized in that this device comprises lighting source (101), the 3rd quarter wave plate (110) successively along this lighting source output beam direction, polarization splitting prism (103), first quarter wave plate (104), group (105) before 4f lens, spatial filter (111) successively on the right side of described polarization splitting prism (103), rear group (112) and the detector (113) of 4f lens combination, the second quarter wave plate (108) and triangular prism (109) successively in the left side of described polarization splitting prism (103), rear group (112) of described 4f lens front group (105) and 4f lens combination form 4f lens combination, described detector (113) is positioned at the back focal plane of rear group of described 4f lens combination, the input end of the output termination data processor of described detector (113).
2. the alignment device of Moire fringe according to claim 1, it is characterized in that described lighting source (101) is multi wave length illuminating source, its output beam is linearly polarized light.
3. the alignment device of Moire fringe according to claim 1, is characterized in that described detector (113) is CCD.
4. the alignment device of the Moire fringe belonging to claim 1, is characterized in that described spatial filter (111) is variable filter.
5. the alignment device for the Moire fringe of lithographic equipment, it is characterized in that this device comprises lighting source (101), the 3rd quarter wave plate (110) successively along this lighting source (101) output beam direction, polarization splitting prism (103), first quarter wave plate (104), group (105) before 4f lens, the first half-wave plate (203) successively in the first half on the right side of described polarization splitting prism (103), first birefringece crystal (204), second half-wave plate (205), the latter half on the right side of described polarization splitting prism (103) is the second birefringece crystal (206), thereafter spatial filter (111) is followed successively by, rear group (112) and the detector (113) of 4f lens combination, the second quarter wave plate (108) successively in the left side of described polarization splitting prism (103), field lens (201) and catoptron (202), rear group (112) of described 4f lens front group (105) and 4f lens combination form 4f lens combination, described detector (113) is positioned at the back focal plane of rear group (112) of described 4f lens combination, the input end of the output termination data processor of described detector (113).
6. the alignment device of Moire fringe as claimed in claim 5, it is characterized in that described lighting source (101) is multi wave length illuminating source, its output beam is linear polarization.
7. the alignment device of Moire fringe as claimed in claim 5, is characterized in that described detector (113) is CCD.
8. the alignment device of the Moire fringe belonging to claim 5, is characterized in that described spatial filter (111) is variable filter.
9. the alignment device of Moire fringe as claimed in claim 5, is characterized in that described field lens (201) and catoptron (202) can replace with right-angle prism.
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| CN106933046A (en) * | 2015-12-30 | 2017-07-07 | 上海微电子装备有限公司 | Device and survey calibration method for overlay error detection |
| CN108254935A (en) * | 2018-01-12 | 2018-07-06 | 合肥工业大学 | The method of adjustment and equipment that polarizer is aligned with MSE diagnostic system axis of vision |
| CN112631090A (en) * | 2019-09-24 | 2021-04-09 | 长鑫存储技术有限公司 | Overlay mark and overlay error testing method |
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| CN105070201B (en) | 2017-12-05 |
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Effective date of registration: 20190930 Address after: Room 601-10, 6th floor, No. 2, Jingyuan Beijie, Beijing Economic and Technological Development Zone, Daxing District, Beijing, 100176 Patentee after: Beijing Guowang Optical Technology Co., Ltd. Address before: 800-211 201800 post office box, Shanghai, Shanghai, Jiading District Patentee before: Shanghai Optical Precision Machinery Inst., Chinese Academy of Sciences |