CN106933046A - Device and survey calibration method for overlay error detection - Google Patents
Device and survey calibration method for overlay error detection Download PDFInfo
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- CN106933046A CN106933046A CN201511025488.4A CN201511025488A CN106933046A CN 106933046 A CN106933046 A CN 106933046A CN 201511025488 A CN201511025488 A CN 201511025488A CN 106933046 A CN106933046 A CN 106933046A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7046—Strategy, e.g. mark, sensor or wavelength selection
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7069—Alignment mark illumination, e.g. darkfield, dual focus
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
The invention discloses a kind of device for overlay error detection and survey calibration method, the device includes：Light source, for producing incident light, the incident light is scattering light；Illuminator, two beams are divided into by incident light, and a branch of as measurement light to incide object lens, another Shu Zuowei monitorings light is incided in detector；Object lens, for that will measure, light is oblique to be mapped to overlay mark；Reference marker, for generating reference light；Detector, positioned at objective lens pupil face, for detecting overlay mark difraction spectrum；Rotatable workpiece platform, for carrying and rotating the reference marker and/or overlay mark.The present invention is used and measures signal normalization by the identical reference light of light path with alignment signal, so as to disposably eliminate the influence to alignment signal such as transmitance asymmetry, the spatial distribution heterogeneity of incident light, the change of spatial distribution, detector sensitivity heterogeneity, prior art never referred to similar survey school side case.
Description
Technical field
The present invention relates to IC manufacturing field, more particularly to a kind of device for overlay error detection and
Survey calibration method.
Background technology
According to the lithography measurements Technology Roadmap that ITRS is given, as litho pattern CD sizes enter 22nm
And following process node, the particularly extensive use of double exposure (Double Patterning) technology, to light
The certainty of measurement requirement of carving technology parameter alignment (overlay) comes into sub- nm regime.Due to imaging point
The limitation of the resolution limit, traditional alignment e measurement technology (English full name based on imaging and image recognition：
Imaging-Based overlay, referred to as：IBO) can not gradually meet new process node to measure alignment
Requirement.Alignment e measurement technology (English full name based on diffraction optical detection：Diffraction-Based overlay,
Referred to as：DBO the Main Means of alignment measurement) are just progressively turned into.
A kind of DBO technologies are disclosed in the prior art, and the technology is by measuring overlay mark diffraction light angular resolution
Asymmetry in spectrum between identical diffraction time obtains overlay error.The angle of diffraction of diffraction light is with incident light beam strikes
Angle change and change, so-called reflected light angular resolution spectrum refers to the incident light of different angles after labeled diffraction
The light distribution that diffraction light is formed in different angles.Fig. 1 a be ring illumination pattern under, each diffraction time
The distribution situation on ccd detector is composed in angular resolution.Fig. 1 b are the structure drawing of device of the technical scheme, light
The light that source 2 sends is focused on by lens L2 and the incident light of narrow bandwidth, thing is formed after interference filter device 30
Mirror L1 is by the general overlay mark being made up of two-layer striated pattern on incident light rays to silicon chip 6.Set blaze
Note detector 32 is located at the back focal plane 40 of object lens L1, after the diffraction light of overlay mark is collected by object lens L1
Reflected face 34 is received by overlay mark detector 32.Overlay mark detector 32 measure overlay mark each
The angular resolution spectrum of angle diffraction light.In order to prevent the overlap between different wave length angular spectrum, the program from being filtered using interference
Wave apparatus are filtered to light source, form the measurement light of narrow bandwidth.
From the foregoing, the program is in its essence that produced based on being incident on overlay mark at different levels spread out
The relation penetrated between light light intensity and overlay error carries out alignment measurement.Therefore, the spatial distribution of incident light is non-
Uniformity and its disturbance, signal receiving device are any optics in detector sensitivity heterogeneity, light path
The series of factors such as the heterogeneity of the transmitance of element, can all cause actually measured light intensity to deviate ideal value,
And then measurement error is introduced, so as to influence alignment certainty of measurement.
The content of the invention
The present invention provides a kind of device for overlay error detection and surveys calibration method, to solve in the prior art
Alignment measurement error is larger, the low problem of precision.
In order to solve the above technical problems, the present invention provides a kind of device of overlay error detection, including：Light source,
For producing incident light, the incident light is scattering light；Illuminator, two beams, Yi Shuzuo are divided into by incident light
In inciding object lens for measurement light, another Shu Zuowei monitorings light is incided in detector；Object lens, for that will survey
Light is oblique is mapped on overlay mark for amount；Reference marker, for generating reference light；Detector, positioned at object lens light
Pupil face, for detecting overlay mark difraction spectrum；Rotatable workpiece platform, for carrying and rotating the reference
Mark and/or overlay mark.
Preferably, the illuminator includes：Collimatied beam mirror, filter plate, polarizer, aperture diaphragm,
First lens, field stop, the second lens and beam splitter.
Preferably, the illuminator includes：Reflecting prism, with the object lens pupil face after beam splitter
At conjugate position, it is used to produce the monitoring light.
Preferably, the aperture diaphragm can be annular, circular hole or slit.
Preferably, using overlay mark as reference marker.
Preferably, the reference marker is used with overlay mark cycle identical grating marker or with the light
The grating benchmark version of grid mark, the grating marker is located in test silicon wafer, and the grating benchmark version is located at institute
State on rotatable workpiece platform.
A kind of survey calibration method for overlay error detection, to the alignment signal formed through overlay mark and through ginseng
The reference signal for examining mark formation carries out light strong disturbance normalization, completes to survey school.
Preferably, the smooth strong disturbance normalization is using point is except normalization or divides exactly normalization.
Preferably, the point refers to except normalization：Based between the measurement light hot spot and monitoring light hot spot
Position relationship, by it is described monitoring light hot spot shift one's position to measurement light facula position at, carry out pixel to picture
The point of element removes normalized.
Divide exactly normalization and refer to preferably, described：The average intensity values of monitoring light hot spot are calculated, survey is used
Amount light hot spot is divided by the light intensity value.
Preferably, the use overlay mark is used as reference marker.
Preferably, using in test silicon wafer with overlay mark cycle identical grating marker as reference
Mark.
Preferably, by measuring alignment signal of the reference marker in 0 degree and 180 degree, by 0 degree and 180
The alignment signal of degree is added and can obtain reference signal.
Preferably, carrying out obtaining reference signal while TIS is measured.
Preferably, using the grating benchmark version on the rotatable workpiece platform as reference marker, institute
State and be provided with and overlay mark cycle and direction identical grating marker in grating benchmark version.
Preferably, alignment signal of the reference marker at 0 degree is reference signal
Compared with prior art, the present invention has advantages below：
1st, the present invention is used and measures signal normalizing by the identical reference light of light path with alignment signal
Change, so as to disposably eliminate transmitance asymmetry, the spatial distribution heterogeneity of incident light, spatial distribution
The influence to alignment signal such as change, detector sensitivity heterogeneity, prior art never referred to class
Like survey school side case；
2nd, the present invention proposes three kinds of reference markers, and reference light is generated by three kinds of reference markers, including with alignment
Mark generates the technical scheme without the reference light of alignment information as reference marker；
3rd, the present invention can be carried out online using school side's case is surveyed, and not influence yield；
4th, the present invention improves alignment certainty of measurement, TIS is at least reduced two orders of magnitude, less than 0.01nm；
5th, the present invention makes relevance reduction of the alignment certainty of measurement to some hardware performances of system：By light source intensity
Spatial distribution heterogeneity, the transmitance asymmetry of optical element, detector sensitivity heterogeneity etc. are
System index reduces an order of magnitude.
Brief description of the drawings
When Fig. 1 a are ring illumination, the distribution on ccd detector is composed in the angular resolution of each diffraction time；
Fig. 1 b are the structure drawing of device of DBO technical schemes in the prior art；
Fig. 2 is structural representation of the present invention for the device of overlay error detection；
Fig. 3 is the structural representation of overlay mark of the present invention；
Fig. 4 is the schematic diagram of ring illumination light source of the present invention；
Fig. 5 is the facula position schematic diagram that detector of the present invention is received；
Fig. 6 a are the schematic diagram (without overlay error) of overlay mark of the present invention；
Fig. 6 b are the schematic diagram (containing overlay error ε) of overlay mark of the present invention；
Fig. 7 a are light intensity schematic diagram when overlay mark of the present invention is 0 degree；
Fig. 7 b are light intensity schematic diagram when overlay mark of the present invention is 180 degree；
Fig. 8 is the schematic diagram of reference signal in the embodiment of the present invention 1；
Fig. 9 is the survey calibration method flow chart detected for overlay error in the embodiment of the present invention 1.
Specific embodiment
It is right below in conjunction with the accompanying drawings to enable the above objects, features and advantages of the present invention more obvious understandable
Specific embodiment of the invention is described in detail.It should be noted that, accompanying drawing of the present invention is using simplification
Form and use non-accurately ratio, be only used to conveniently, lucidly aid in illustrating the embodiment of the present invention mesh
's.
As shown in Fig. 2 the device for overlay error detection of the invention, including：
Light source 41, for producing incident light, the incident light is scattering light.Specifically, the light source 41 can be with
It is white light source, broadband light source or the composite light source being made up of several discrete spectral Lines.Wherein, white light
Light source can be using Xe light sources etc.；Broadband refers to that generation includes ultraviolet, visible and infrared band or above-mentioned wave band
The light of combination；Composite light source can be obtained by the laser of several different wave lengths by mixing.
Illuminator, two beams are divided into by incident light, a branch of as measurement light to incide object lens 410, another
Shu Zuowei monitoring light is incided in detector 413.Specifically, the illuminator includes：Collimatied beam mirror 42,
Narrow band filter slice 43, polarizer 44, aperture diaphragm 45, the first lens 46, field stop 47, second are saturating
Mirror 48, beam splitter 49 and reflecting prism 414.Further, the aperture diaphragm 45 for annular or
Circular hole as shown in Figure 4 or slit or other arbitrary shapes；The reflecting prism 414 is arranged on described
After beam splitter 49, at the pupil face conjugate position of the object lens 410.
Object lens 410, for that will measure, light is oblique to be mapped to overlay mark 411；
Reference marker, for generating reference light；
Detector 413, positioned at the pupil plane of object lens 410, for detecting spreading out for overlay mark 411 and reference marker
Penetrate spectrum；
Rotatable workpiece platform 415, for carrying and rotating the reference marker and/or overlay mark 411.
The light that the light source 41 sends is incident to narrow band filter slice 43 after being collimated by collimatied beam mirror 42,
The light of single wavelength is obtained, then by polarizer 44, linearly polarized light is obtained, the linearly polarized light is incident to hole
Footpath diaphragm 45, generation meets the hot spot of incident light shape requirements, and then light beam is by incident after the second lens 48
To beam splitter 49, a part is reflected as measurement light m by beam splitter 49, and another part is directed through the beam splitting
The reflected prism 414 of mirror 49 reflexes to detector 413 as monitoring light s.Wherein, measurement light m is by beam splitting
Mirror 49 is incident to the generation diffraction of overlay mark 411 and forms each primary maximum diffraction light after reflecting through object lens 410, then
Received by detector 413 after object lens 410 and lens group 412, another beam is through beam splitter 49 and reflected
The monitoring light s of the reflection of prism 414, is reflected, then connect by detector 413 through lens group 412 by beam splitter 49
Receive.Positions of the measurement light m with monitoring light s on detector 413 is as shown in Figure 5.
From the foregoing, it will be observed that the measurement light m is with the difference of monitoring light s, if by object lens 410 and set
Marking 411.That is, influence of the disturbance of light source intensity to both is synchronous, therefore, by right
Both light intensity are normalized, and can eliminate the influence of the disturbance to signal light intensity of light source intensity, (hereinafter
Referred to as light strong disturbance normalization).The smooth strong disturbance normalization can be removed normalization and be divided exactly using point returns
One changes two ways.Specifically can according to the suitable normalization mode of the size of forcing frequency selection, frequency compared with
Carried out when big a little except normalization, otherwise carry out dividing exactly normalization.
The point refers to except normalization：Based on the measurement light m hot spots on detector 413 and monitoring
Position relationship between light s hot spots, the monitoring light s hot spots are shifted one's position to measurement light m facula positions
Place, the point for carrying out pixel for pixel removes normalized.
It is described to divide exactly normalization and refer to：The average intensity values of monitoring light s hot spots are calculated, measurement light m light is used
Spot is divided by the light intensity value.
As shown in figure 3, it is the structural representation of overlay mark 411, the overlay mark 411 is by silicon substrate
Be made on bottom the optical grating construction of two-layer up and down composition, lower floor's optical grating construction by a preceding exposure figure it is developed,
The semiconductor technologies such as etching, deposition are made, and upper strata optical grating construction is usually the photoetching after this exposure, development
Glue pattern.Overlay error refers to the site error between double exposure.
The present invention use the principle of scatterometry commercial measurement overlay error for：When measurement light m normal incidences to set
When on marking 411, due to the mark structure asymmetry that overlay error causes, make the level high of diffraction light
Light light strong production asymmetry, the asymmetry is in the range of the overlay error of very little with overlay error proximal line
Property change.
For example：If there is overlay error ε in overlay mark 411, each primary maximum diffraction light of the incident light for measuring
Light intensity I+And I-Asymmetry be approximately represented by：
A=I+-I-=k ε (1)
Wherein, k is overlay mark technique and the related factor of measurement light attribute, is a unknown quantity.For
Any one piece of overlay mark 411, as shown in Fig. 7 a, 7b, after it rotates 180 degree, its positive level is spread out
Penetrate light intensity equal with the negative level diffraction intensity of original, i.e.,：
Again by formula (1), it is readily obtained：
Or
Unknown quantity k is removed, overlay error ε is obtained, 2 group as shown in figure 6 a and 6b is generally made
Son mark 411a and 411b.In Fig. 6 a, 6b, left side son mark 411a is upper and lower two-layer optical grating construction
Initial position, and there is a default bias amount Δ between the upper and lower layer grating of the sub- mark 411b in the right, left side
It is then-Δ.Now, the light intensity asymmetry on two son marks is measured respectively, is obtained：
Aright=k (ε+Δ)
Aleft=k (ε-Δ) (4)
Then, can obtain overlay error ε is：
Additionally, the present invention also proposes a kind of survey calibration method for overlay error detection, by through covering blaze
Remember the alignment signal of formation and carry out light strong disturbance normalization through the reference signal that reference marker is formed, complete to survey
School.Specially：Light source 41 sends incident light, by illuminator by incident light beam strikes to object lens 410,
The object lens 410 are by the incident light beam strikes to overlay mark 411 and reference marker and in the set blaze
Diffraction in note 411 and reference marker, each primary maximum that detector 413 is received from the diffraction of overlay mark 411 is spread out
Light is penetrated as alignment signal, each primary maximum diffraction light from reference marker diffraction is received as reference signal, it is right
The alignment signal and reference signal carry out light strong disturbance normalized, complete to survey school.
Embodiment 1
The present embodiment using overlay mark 411 itself as reference marker, by overlay mark 411 0,
Alignment signal during 180 degree is added, and obtains reference marker.
Specifically, Fig. 9 is refer to, the acquisition modes of reference signal are：
When overlay mark 411 is 0 degree, detector 413 receives measurement light m and monitoring light s, and to the measurement
Light m and monitoring light s carry out light strong disturbance normalized, alignment signal OV_0 when obtaining 0 degree；
Then, after rotatable workpiece platform 415 drives the rotation 180 degree of overlay mark 411, detector 413 is again
It is secondary to receive measurement light m and monitoring light s, and light strong disturbance normalization is carried out to the measurement light m and monitoring light s
Treatment, obtains alignment signal OV_180 during 180 degree；
Then, to overlay mark 411, alignment signal in 0,180 degree is added, you can obtain without appointing
The reference signal of what alignment signal, with reference to above formula (2) in, can obtain：
Wherein, OV_ref_positive refers to：The reference signal of positive aurora, OV_ref_negative is represented：
The reference signal of negative pole light.
As shown in figure 8, reference signal OV_ref can intuitively be expressed as：
OV_ref=OV_0+OV_180 (7)
It is to complete to survey school, such as following formula by OV_0 points remove above-mentioned reference signal by actual alignment signal：
OV_calibarted=OV_0./OV_ref (8)
Further, due to being required for measurement TIS (Tool Induced for different technique silicon chips
Shift), and TIS measurement essence be measurement same mark 0,180 degree when alignment signal.The present embodiment,
One or more signal of change for marking can also be selected to be referred to while TIS measurements are carried out
Signal, the reference signal is directly used during follow-up survey school, saves technique.
Embodiment 2
The present embodiment is used in test silicon wafer with overlay mark cycle identical grating marker as reference marker.
The generation scheme of its reference marker has two kinds；A kind of scheme is identical with embodiment 1, the light of test silicon wafer
Grid are marked at the alignment signal of 0 degree and 180 degree, and are added.Another scheme is：When directly gathering 0 degree
Grating marker diffracted signal do normalization obtain reference signal.
Embodiment 3
The reference marker of the present embodiment uses the grating benchmark version in work stage, in light beam benchmark version
With with overlay mark cycle and the identical grating marker in direction, the different acquisition phase according to overlay mark
The diffracted light signals answered, are normalized the signal for obtaining afterwards as reference signal.
Obviously, those skilled in the art can carry out various changes and modification without deviating from the present invention to invention
Spirit and scope.So, if it is of the invention these modification and modification belong to the claims in the present invention and its
Within the scope of equivalent technologies, then the present invention is also intended to including including these changes and modification.
Claims (15)
1. it is a kind of for overlay error detection device, it is characterised in that including：
Light source, for producing incident light, the incident light is scattering light；
Illuminator, two beams are divided into by the incident light, a branch of as measurement light to incide object lens, another
Shu Zuowei monitoring light is incided in detector；
Object lens, for that will measure, light is oblique to be mapped to overlay mark；
Reference marker, for generating reference light；
Detector, positioned at objective lens pupil face, for detecting overlay mark difraction spectrum；
Rotatable workpiece platform, for carrying and rotating the reference marker and/or overlay mark.
2. it is as claimed in claim 1 to be used for the device that overlay error is detected, it is characterised in that the illumination
System includes what is be arranged in order：Collimatied beam mirror, filter plate, polarizer, aperture diaphragm, the first lens, regard
Field diaphragm, the second lens and beam splitter.
3. it is as claimed in claim 2 to be used for the device that overlay error is detected, it is characterised in that the illumination
System includes：Reflecting prism, after the beam splitter with the object lens pupil face conjugate position at, be used to produce
The life monitoring light.
4. it is as claimed in claim 2 to be used for the device that overlay error is detected, it is characterised in that the aperture
Diaphragm can be annular, circular hole or slit.
5. it is as claimed in claim 1 to be used for the device that overlay error is detected, it is characterised in that the reference
Mark using with the overlay mark cycle identical grating marker or grating benchmark with the grating marker
Version, the grating marker is located in test silicon wafer, and the grating benchmark version is located on the rotatable workpiece platform.
6. it is a kind of for overlay error detection survey calibration method, it is characterised in that incident light is sent by light source,
By illuminator by incident light beam strikes to object lens, the object lens are by the incident light beam strikes to overlay mark
With the diffraction on reference marker and on the overlay mark and reference marker, detector received from the set blaze
Each primary maximum diffraction light of note and reference marker diffraction, to entering from each primary maximum diffraction light of the overlay mark
Row normalization forms alignment signal, and each primary maximum diffraction light to the reference marker is normalized to be formed
Reference signal, alignment signaling point remove reference signal, complete survey check and correction through overlay mark formed alignment signal and
The reference signal formed through reference marker carries out light strong disturbance normalization, completes to survey school.
7. it is as claimed in claim 6 to be used for the survey calibration method that overlay error is detected, it is characterised in that described
The normalization of light strong disturbance is using point is except normalization or divides exactly normalization.
8. it is as claimed in claim 7 to be used for the survey calibration method that overlay error is detected, it is characterised in that described
Put except normalization refers to：Based on the position relationship between the measurement light hot spot and monitoring light hot spot, will be described
Monitoring light hot spot is shifted one's position to measurement light facula position, and the point for carrying out pixel for pixel removes normalized.
9. it is as claimed in claim 7 to be used for the survey calibration method that overlay error is detected, it is characterised in that described
Dividing exactly normalization refers to：The average intensity values of monitoring light hot spot are calculated, using measurement light hot spot divided by the light intensity
Value.
10. it is as claimed in claim 7 to be used for the survey calibration method that overlay error is detected, it is characterised in that to adopt
With the overlay mark as reference marker.
The 11. survey calibration methods for being used for overlay error detection as claimed in claim 7, it is characterised in that adopt
With in test silicon wafer with overlay mark cycle identical grating marker as reference marker.
The 12. survey calibration methods for being used for overlay error detection as claimed in claim 7, it is characterised in that adopt
With the grating benchmark version on rotatable workpiece platform as reference marker, it is provided with the grating benchmark version
With overlay mark cycle and direction identical grating marker.
The 13. survey calibration method for overlay error detection as described in claim 10,11 or 12, it is special
Levy and be, by measuring alignment signal of the reference marker at 0 degree and during 180 degree, by 0 degree with 180 degree
Alignment signal is added and can obtain reference signal.
The 14. survey calibration methods for being used for overlay error detection as claimed in claim 13, it is characterised in that
Carrying out obtaining reference signal while TIS is measured.
The survey calibration method for overlay error detection described in 15. claims 10,11 or 12, its feature
It is that alignment signal of the reference marker at 0 degree is reference signal.
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| CN107797393A (en) * | 2017-11-14 | 2018-03-13 | 上海华力微电子有限公司 | A kind of improved alignment precision method for measurement |
| CN111001829A (en) * | 2019-10-25 | 2020-04-14 | 郑州旅游职业学院 | Lathe rotation error detection monitoring device |
| CN111566564A (en) * | 2018-01-02 | 2020-08-21 | 科磊股份有限公司 | Superimposed scatterometry based on diffraction |
| CN112435936A (en) * | 2020-11-23 | 2021-03-02 | 长江存储科技有限责任公司 | Overlay precision detection method and semiconductor structure |
| CN113325665A (en) * | 2020-02-28 | 2021-08-31 | 上海微电子装备（集团）股份有限公司 | Overlay error measuring device and method |
| CN114279577A (en) * | 2021-12-20 | 2022-04-05 | 清华大学深圳国际研究生院 | High-precision overlay measurement quantity value tracing method and scatterometer |
| EP3970184A4 (en) * | 2019-02-14 | 2023-02-15 | KLA Corporation | Method of measuring misregistration in the manufacture of topographic semiconductor device wafers |
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