CN106933046B - Device and survey calibration method for overlay error detection - Google Patents
Device and survey calibration method for overlay error detection Download PDFInfo
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- CN106933046B CN106933046B CN201511025488.4A CN201511025488A CN106933046B CN 106933046 B CN106933046 B CN 106933046B CN 201511025488 A CN201511025488 A CN 201511025488A CN 106933046 B CN106933046 B CN 106933046B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7046—Strategy, e.g. mark, sensor or wavelength selection
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7069—Alignment mark illumination, e.g. darkfield, dual focus
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Length Measuring Devices By Optical Means (AREA)
Abstract
The invention discloses a kind of device for overlay error detection and calibration method is surveyed, which includes: light source, and for generating incident light, which is scattering light；Incident light is divided into two bundles by lighting system, a branch of to be incident in object lens as measurement light, and another Shu Zuowei monitoring light is incident in detector；Object lens, for that will measure, light is oblique to be mapped to overlay mark；Reference marker, for generating reference light；Detector is located at objective lens pupil face, for detecting overlay mark difraction spectrum；Rotatable workpiece platform, for carrying and rotating the reference marker and/or overlay mark.Present invention use measures signal normalization by the identical reference light of optical path with alignment signal, to disposably eliminate the influence to alignment signal such as transmitance asymmetry, the spatial distribution heterogeneity of incident light, the variation of spatial distribution, detector sensitivity heterogeneity, the prior art never referred to similar survey school side's case.
Description
Technical field
The present invention relates to IC manufacturing field, in particular to a kind of device and survey school side for overlay error detection
Method.
Background technique
The lithography measurements Technology Roadmap provided according to ITRS, as litho pattern CD size enters 22nm and following technique
The extensive use of node, especially double exposure (Double Patterning) technology, to lithography process parameters alignment
(overlay) measurement accuracy requires to come into sub-nanometer field.Due to the limitation of the imaging resolution limit, it is traditional based on
The alignment measuring technique (full name in English: Imaging-Based overlay, referred to as: IBO) of imaging and image recognition is gradually not
It is able to satisfy the requirement that new process node measures alignment.Based on diffraction optical detection alignment measuring technique (full name in English:
Diffraction-Based overlay, referred to as: DBO) just gradually becoming the main means that alignment measures.
A kind of DBO technology is disclosed in the prior art, which passes through phase in measurement overlay mark diffraction light angular resolution spectrum
Overlay error is obtained with the asymmetry between diffraction time.The angle of diffraction of diffraction light changes with incident light beam strikes angle change,
So-called reflected light angular resolution spectrum refers to the incident light light that diffraction light is formed in different angle after labeled diffraction of different angle
Strong distribution.Fig. 1 a is under ring illumination mode, and the distribution situation on ccd detector is composed in the angular resolution of each diffraction time.Figure
1b is the structure drawing of device of the technical solution, and the light that light source 2 issues is focused by lens L2 and formed after interference filter device 30
The incident light of narrow bandwidth, object lens L1 will be on the overlay marks being generally made of two layers of striated pattern on incident light rays to silicon wafer 6.
Overlay mark detector 32 is located at the back focal plane 40 of object lens L1, the diffraction light of overlay mark collected by object lens L1 after through reflecting surface
34 are received by overlay mark detector 32.Overlay mark detector 32 measures the angular resolution of overlay mark all angles diffraction light
Spectrum.Overlapping between different wave length angular spectrum in order to prevent, the program are filtered light source using interference filter device, form narrowband
Wide measurement light.
From the foregoing, the program is based on the diffraction light light at different levels for being incident on overlay mark and generating in its essence
The relationship between overlay error carries out alignment measurement by force.Therefore, the spatial distribution heterogeneity and its disturbance, letter of incident light
A system such as heterogeneity of transmitance of any optical element in number reception device, that is, detector sensitivity heterogeneity, optical path
Column factor can all cause actually measured light intensity to deviate ideal value, and then introduce measurement error, to influence alignment measurement accuracy.
Summary of the invention
The present invention provide it is a kind of for overlay error detection device and survey calibration method, with solve in the prior art alignment survey
It is larger to measure error, the low problem of precision.
In order to solve the above technical problems, the present invention provides a kind of device of overlay error detection, comprising: light source, for producing
Raw incident light, the incident light are scattering light；Incident light is divided into two bundles by lighting system, a branch of that measurement light is used as to be incident on object lens
In, another Shu Zuowei monitoring light is incident in detector；Object lens, for that will measure, light is oblique to be mapped to overlay mark；With reference to mark
Note, for generating reference light；Detector is located at objective lens pupil face, for detecting overlay mark difraction spectrum；Rotatable workpiece
Platform, for carrying and rotating the reference marker and/or overlay mark.
Preferably, the lighting system includes: collimatied beam mirror, filter plate, polarizing film, aperture diaphragm, the first lens, view
Field diaphragm, the second lens and beam splitter.
Preferably, the lighting system includes: reflecting prism, it is located at after beam splitter and object lens pupil face conjugate position
Place, to generate the monitoring light.
Preferably, the aperture diaphragm can be annular, circular hole or slit.
Preferably, using overlay mark as reference marker.
Preferably, the reference marker is using grating marker identical with the overlay mark period or has the grating marker
Grating benchmark version, the grating marker is located in test silicon wafer, and the grating benchmark version is located on the rotatable workpiece platform.
A kind of survey calibration method for overlay error detection, to the alignment signal formed through overlay mark and through reference marker
The reference signal of formation carries out light intensity disturbance normalization, completes to survey school.
Preferably, the light intensity disturbance normalization except normalization or divides exactly normalization using point.
Preferably, the point refers to except normalization: based on the measurement light hot spot and monitoring the position between light hot spot
Relationship shifts one's position the monitoring light hot spot to measurement light facula position, carries out the point of pixel for pixel except at normalization
Reason.
Divide exactly normalization preferably, described and refer to: calculating the average intensity values of monitoring light hot spot, uses measurement light hot spot
Divided by the light intensity value.
Preferably, described use overlay mark as reference marker.
Preferably, using positioned at grating marker identical with the overlay mark period in test silicon wafer as reference marker.
Preferably, the alignment signal by measurement reference marker in 0 degree and 180 degree, by 0 degree and the alignment of 180 degree
Reference signal can be obtained in signal addition.
Preferably, obtaining reference signal while carrying out TIS measurement.
Preferably, using the grating benchmark version being located on the rotatable workpiece platform as reference marker, the grating
Grating marker identical with overlay mark period and direction is provided in benchmark version.
Preferably, alignment signal of the reference marker at 0 degree is reference signal
Compared with prior art, the invention has the following advantages that
1, use of the invention and alignment signal pass through the identical reference light of optical path and measure signal normalization, thus
It is disposable to eliminate transmitance asymmetry, the spatial distribution heterogeneity of incident light, the variation of spatial distribution, detector sensitivity
The influence to alignment signal such as heterogeneity, the prior art never referred to similar survey school side's case；
2, the present invention proposes three kinds of reference markers, generates reference light by three kinds of reference markers, including make with overlay mark
For reference marker, the technical solution of the reference light without alignment information is generated；
3, the present invention can be carried out online using school side's case is surveyed, and not influence yield；
4, the present invention improves alignment measurement accuracy, and TIS is at least reduced to two orders of magnitude, is less than 0.01nm；
5, the present invention reduces alignment measurement accuracy to the relevance of the certain hardware performances of system: by light source intensity space point
The system indexs such as cloth heterogeneity, the transmitance asymmetry of optical element, detector sensitivity heterogeneity reduce a number
Magnitude.
Detailed description of the invention
When Fig. 1 a is ring illumination, the distribution on ccd detector is composed in the angular resolution of each diffraction time；
Fig. 1 b is the structure drawing of device of DBO technical solution in the prior art；
Fig. 2 is structural schematic diagram of the present invention for the device of overlay error detection；
Fig. 3 is the structural schematic diagram of overlay mark of the present invention；
Fig. 4 is the schematic diagram of ring illumination light source of the present invention；
Fig. 5 is the received facula position schematic diagram of detector of the present invention；
Fig. 6 a is the schematic diagram (no overlay error) of overlay mark of the present invention；
Fig. 6 b is the schematic diagram of overlay mark of the present invention (containing overlay error ε)；
The light intensity schematic diagram that Fig. 7 a is overlay mark of the present invention when being 0 degree；
The light intensity schematic diagram that Fig. 7 b is overlay mark of the present invention when being 180 degree；
Fig. 8 is the schematic diagram of reference signal in the embodiment of the present invention 1；
Fig. 9 is the survey calibration method flow chart in the embodiment of the present invention 1 for overlay error detection.
Specific embodiment
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, with reference to the accompanying drawing to the present invention
Specific embodiment be described in detail.It should be noted that attached drawing of the present invention is all made of simplified form and uses non-essence
Quasi- ratio, only for the purpose of facilitating and clarifying the purpose of the embodiments of the invention.
As shown in Fig. 2, the device for overlay error detection of the invention, comprising:
Light source 41, for generating incident light, which is scattering light.Specifically, the light source 41 can be white light light
Source, broadband light source or the composite light source being made of several discrete spectral Lines.Wherein, white light source can use Xe light source
Deng；Broadband refers to the light generated including ultraviolet, visible and infrared band or above-mentioned band combination；Composite light source can be by several
The laser of different wave length is obtained by mixing.
Incident light is divided into two bundles by lighting system, a branch of to be incident in object lens 410 as measurement light, another Shu Zuowei prison
Light is surveyed to be incident in detector 413.Specifically, the lighting system includes: collimatied beam mirror 42, narrow band filter slice 43, polarizing film
44, aperture diaphragm 45, the first lens 46, field stop 47, the second lens 48, beam splitter 49 and reflecting prism 414.Further
, the aperture diaphragm 45 is annular or circular hole or slit or other arbitrary shapes as shown in Figure 4；The reflection rib
Mirror 414 is arranged after the beam splitter 49, at the 410 pupil face conjugate position of object lens.
Object lens 410, for that will measure, light is oblique to be mapped to overlay mark 411；
Reference marker, for generating reference light；
Detector 413 is located at 410 pupil plane of object lens, for detecting the difraction spectrum of overlay mark 411 and reference marker；
Rotatable workpiece platform 415, for carrying and rotating the reference marker and/or overlay mark 411.
The light that the light source 41 issues is incident to narrow band filter slice 43, obtains single after the collimation of collimatied beam mirror 42
The light of wavelength then passes through polarizing film 44, obtains linearly polarized light, which is incident to aperture diaphragm 45, generation meet into
The hot spot of light shape requirements is penetrated, then light beam is incident to beam splitter 49 after the second lens 48, and a part is anti-by beam splitter 49
It penetrates as measurement light m, another part is directed through the beam splitter 49 and reflexes to detector 413 as monitoring through reflecting prism 414
Light s.Wherein, the generation diffraction of overlay mark 411, which is incident to, through object lens 410 after measurement light m is reflected by beam splitter 49 forms each main pole
Big diffraction light, then received after object lens 410 and lens group 412 by detector 413, another beam is through beam splitter 49 and through reflecting rib
The monitoring light s that mirror 414 reflects, is reflected, then received through lens group 412 by detector 413 by beam splitter 49.The measurement light m with
It is as shown in Figure 5 to monitor position of the light s on detector 413.
From the foregoing, it will be observed that the measurement light m is with the difference for monitoring light s, if pass through object lens 410 and overlay mark 411.
That is, influence of the disturbance of light source intensity to the two be it is synchronous, therefore, be normalized by the light intensity to the two,
Influence of the disturbance to signal light intensity of light source intensity can be eliminated, (hereinafter indicated as light intensity disturbance normalization).The light intensity is disturbed
Dynamic normalization except normalization and can divide exactly normalization two ways using point.It can specifically be selected according to the size of forcing frequency
Suitable normalization mode, carries out a little except normalization when frequency is larger, otherwise carries out dividing exactly normalization.
The point refers to except normalization: based on the measurement light m hot spot and monitoring light s hot spot being located on detector 413
Between positional relationship, by the monitoring light s hot spot shift one's position to measurement light m facula position at, carry out pixel for pixel
Point removes normalized.
It is described to divide exactly normalization and refer to: the average intensity values of monitoring light s hot spot to be calculated, using measurement light m hot spot divided by this
Light intensity value.
As shown in figure 3, it is the structural schematic diagram of overlay mark 411, the overlay mark 411 is made of on a silicon substrate
Upper layer and lower layer optical grating construction composition, the semiconductor technologies such as lower layer's optical grating construction is developed by a preceding exposure figure, etches, deposits
It is made, upper layer optical grating construction is usually the photoetching offset plate figure after this exposure, development.Overlay error refers to the position between double exposure
Error.
The present invention measures the principle of overlay error using scatterometry technology are as follows: when measurement light m normal incidence to overlay mark
When on 411, the mark structure asymmetry due to caused by overlay error generates the high level light light intensity of diffraction light asymmetric
Property, which changes within the scope of the overlay error of very little with overlay error approximately linear.
Such as: if the light intensity of each primary maximum diffraction light for the incident light that overlay mark 411 there are overlay error ε, measures
I+And I-Asymmetry approximation may be expressed as:
A=I+-I-=k ε (1)
Wherein, k is overlay mark technique and the relevant factor of measurement light attribute, is a unknown quantity.For any one
Block overlay mark 411, as shown in Fig. 7 a, 7b, after it rotates 180 degree, positive level diffraction intensity and former negative level diffraction
Light intensity is equal, it may be assumed that
Again by formula (1), it is easy to get:
Or
Unknown quantity k is removed, overlay error ε, usually 2 one group of the son label of production as shown in figure 6 a and 6b are obtained
411a and 411b.In Fig. 6 a, 6b, it is the initial position of upper and lower two layers of optical grating construction that left side, which marks 411a, and the right marks
There are a default bias amount Δ between the upper and lower layer grating of 411b, left side is then-Δ.At this point, being measured on two son labels respectively
Light intensity asymmetry, obtains:
Aright=k (ε+Δ)
Aleft=k (ε-Δ) (4)
Then, overlay error ε can be obtained are as follows:
In addition, the present invention also proposes a kind of survey calibration method for overlay error detection, by being formed to through overlay mark
Alignment signal and through reference marker formed reference signal carry out light intensity disturbance normalization, complete survey school.Specifically: light source 41
Issue incident light, by lighting system by incident light beam strikes into object lens 410, the object lens 410 arrive the incident light beam strikes
Diffraction, detector 413 are received from set on overlay mark 411 and reference marker and on the overlay mark 411 and reference marker
Each primary maximum diffraction light of 411 diffraction of marking receives each primary maximum diffraction light from reference marker diffraction as alignment signal
As reference signal, light intensity is carried out to the alignment signal and reference signal and disturbs normalized, completes to survey school.
Embodiment 1
The present embodiment using overlay mark 411 itself as reference marker, by overlay mark 411 in 0,180 degree
Alignment signal be added, obtain reference marker.
Specifically, Fig. 9, the acquisition modes of reference signal are please referred to are as follows:
When overlay mark 411 is 0 degree, detector 413 receives measurement light m and monitoring light s, and to the measurement light m and monitoring
Light s carry out light intensity disturb normalized, obtain 0 degree when alignment signal OV_0；
Then, after rotatable workpiece platform 415 drives overlay mark 411 to rotate 180 degree, detector 413 receives measurement again
Light m and monitoring light s, and light intensity is carried out to the measurement light m and monitoring light s and disturbs normalized, obtain alignment letter when 180 degree
Number OV_180；
Then, the alignment signal to overlay mark 411 in 0,180 degree is added, and be can be obtained and is believed without any alignment
Number reference signal can be obtained in conjunction in above formula (2):
Wherein, OV_ref_positive refers to: the reference signal of positive aurora, OV_ref_negative are represented: cathode light
Reference signal.
As shown in figure 8, reference signal OV_ref can be indicated intuitively are as follows:
OV_ref=OV_0+OV_180 (7)
Practical alignment signal, that is, OV_0 point is surveyed into school except above-mentioned reference signal can be completed, such as following formula:
OV_calibarted=OV_0./OV_ref (8)
Further, due to requiring measurement TIS (Tool Induced Shift) for different technique silicon wafers,
And TIS measurement essence is alignment signal when measuring same label 0,180 degree.The present embodiment can also carry out TIS measurement
Meanwhile the signal for selecting one or more to mark can be calculated reference signal, when subsequent surveys school, directly uses reference letter
Number, save technique.
Embodiment 2
The present embodiment uses in test silicon wafer grating marker identical with the overlay mark period as reference marker.It is referred to
There are two types of the generation schemes of label；A kind of scheme is identical with embodiment 1, and the grating marker of test silicon wafer is in 0 degree and 180 degree
Alignment signal, and be added.Another scheme are as follows: the diffracted signal of grating marker at directly 0 degree of acquisition does normalization and obtains
Reference signal.
Embodiment 3
The reference marker of the present embodiment using the grating benchmark version being mounted in work stage, have in the light beam benchmark version with
Overlay mark period and the identical grating marker in direction, according to the corresponding diffracted light signals of the different acquisition of overlay mark,
The signal obtained after being normalized is reference signal.
Obviously, those skilled in the art can carry out various modification and variations without departing from spirit of the invention to invention
And range.If in this way, these modifications and changes of the present invention belong to the claims in the present invention and its equivalent technologies range it
Interior, then the invention is also intended to include including these modification and variations.
Claims (14)
1. a kind of device for overlay error detection characterized by comprising
Light source, for generating incident light, which is scattering light；
The incident light is divided into two bundles by lighting system, and a branch of to be incident in object lens as measurement light, another Shu Zuowei monitors light
It is incident in detector；
Object lens, for that will measure, light is oblique to be mapped to overlay mark；
Reference marker, for generating reference light；
Detector is located at objective lens pupil face, for detecting overlay mark difraction spectrum；
Rotatable workpiece platform, for carrying and rotating the reference marker and/or overlay mark；
The reference marker uses grating marker identical with the overlay mark period or the grating base with the grating marker
Quasi- version, the grating marker are located in test silicon wafer, and the grating benchmark version is located on the rotatable workpiece platform.
2. the device for overlay error detection as described in claim 1, which is characterized in that the lighting system includes successively
Arrangement: collimatied beam mirror, filter plate, polarizing film, aperture diaphragm, the first lens, field stop, the second lens and beam splitter.
3. the device for overlay error detection as claimed in claim 2, which is characterized in that the lighting system includes: anti-
Prism is penetrated, after the beam splitter and at the conjugate position of object lens pupil face, to generate the monitoring light.
4. the device for overlay error detection as claimed in claim 2, which is characterized in that the aperture diaphragm can be ring
Shape, circular hole or slit.
5. a kind of survey calibration method for overlay error detection, which is characterized in that issue incident light by light source, be by illumination
For system by incident light beam strikes into object lens, the object lens will be on the incident light beam strikes to overlay mark and reference marker and described
Diffraction on overlay mark and reference marker, detector receive each primary maximum diffraction from the overlay mark and reference marker diffraction
Light is normalized to form alignment signal, to each of the reference marker to from each primary maximum diffraction light of the overlay mark
Primary maximum diffraction light is normalized to form reference signal, and alignment signaling point removes reference signal, completes to survey check and correction through covering blaze
Remember that the alignment signal formed and the reference signal formed through reference marker carry out light intensity disturbance normalization, completes to survey school.
6. the survey calibration method for overlay error detection as claimed in claim 5, which is characterized in that the light intensity disturbs normalizing
Change and normalization is removed using point or divides exactly normalization.
7. the survey calibration method for overlay error detection as claimed in claim 6, which is characterized in that the incident light is divided into two
Beam, a branch of to be incident in the object lens as measurement light, another Shu Zuowei monitoring light is incident in the detector；The point removes
Normalization refers to: based on the measurement light hot spot and monitoring the positional relationship between light hot spot, the monitoring light hot spot is converted
At position to measurement light facula position, the point of pixel for pixel is carried out except normalized.
8. the survey calibration method for overlay error detection as claimed in claim 6, which is characterized in that the incident light is divided into two
Beam, a branch of to be incident in the object lens as measurement light, another Shu Zuowei monitoring light is incident in the detector；It is described to divide exactly
Normalization refers to: the average intensity values of monitoring light hot spot is calculated, using measurement light hot spot divided by the light intensity value.
9. the survey calibration method for overlay error detection as claimed in claim 6, which is characterized in that use the overlay mark
As reference marker.
10. the survey calibration method for overlay error detection as claimed in claim 6, which is characterized in that using positioned at test silicon
On piece grating marker identical with the overlay mark period is as reference marker.
11. the survey calibration method for overlay error detection as claimed in claim 6, which is characterized in that rotatable using being located at
Grating benchmark version in work stage is provided with and overlay mark period and direction phase as reference marker in the grating benchmark version
Same grating marker.
12. the survey calibration method for overlay error detection as described in claim 9,10 or 11, which is characterized in that pass through measurement
Alignment signal of the reference marker in 0 degree and 180 degree, 0 degree is added with the alignment signal of 180 degree can be obtained reference signal.
13. the survey calibration method for overlay error detection as claimed in claim 12, which is characterized in that carrying out TIS measurement
While obtain reference signal.
14. the survey calibration method described in claim 9,10 or 11 for overlay error detection, which is characterized in that reference marker exists
Alignment signal at 0 degree is reference signal.
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| US10824079B2 (en) * | 2017-01-03 | 2020-11-03 | Kla-Tencor Corporation | Diffraction based overlay scatterometry |
| CN107797393B (en) * | 2017-11-14 | 2020-04-24 | 上海华力微电子有限公司 | Improved overlay accuracy measurement method |
| WO2020168140A1 (en) * | 2019-02-14 | 2020-08-20 | Kla Corporation | Method of measuring misregistration in the manufacture of topographic semiconductor device wafers |
| CN111001829B (en) * | 2019-10-25 | 2021-07-02 | 郑州旅游职业学院 | Lathe rotation error detection monitoring device |
| CN113325665A (en) * | 2020-02-28 | 2021-08-31 | 上海微电子装备（集团）股份有限公司 | Overlay error measuring device and method |
| CN112435936B (en) * | 2020-11-23 | 2022-03-15 | 长江存储科技有限责任公司 | Overlay precision detection method and semiconductor structure |
| CN114279577B (en) * | 2021-12-20 | 2023-11-07 | 清华大学深圳国际研究生院 | High-precision overlay measurement magnitude tracing method and scatterometer |
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| CN1795536A (en) * | 2003-05-28 | 2006-06-28 | 株式会社尼康 | Position information measuring method and device, and exposure method and system |
| CN101458458A (en) * | 2007-10-09 | 2009-06-17 | Asml荷兰有限公司 | Alignment method and apparatus, lithographic apparatus, metrology apparatus and device manufacturing method |
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