CN106158675A - 银金合金接合线 - Google Patents

银金合金接合线 Download PDF

Info

Publication number
CN106158675A
CN106158675A CN201510193619.3A CN201510193619A CN106158675A CN 106158675 A CN106158675 A CN 106158675A CN 201510193619 A CN201510193619 A CN 201510193619A CN 106158675 A CN106158675 A CN 106158675A
Authority
CN
China
Prior art keywords
silver
bonding wire
gold
alloy bonding
gold alloy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201510193619.3A
Other languages
English (en)
Other versions
CN106158675B (zh
Inventor
安原和彦
前田菜那子
冈崎纯
冈崎纯一
千叶淳
陈炜
安德优希
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tanaka Denshi Kogyo KK
Original Assignee
Tanaka Denshi Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tanaka Denshi Kogyo KK filed Critical Tanaka Denshi Kogyo KK
Publication of CN106158675A publication Critical patent/CN106158675A/zh
Application granted granted Critical
Publication of CN106158675B publication Critical patent/CN106158675B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/43—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/438—Post-treatment of the connector
    • H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45139—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/786—Means for supplying the connector to be connected in the bonding apparatus
    • H01L2224/78601—Storing means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
    • H01L2224/85035—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
    • H01L2224/85045—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85203—Thermocompression bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H01L2224/85207—Thermosonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399—Material
    • H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/85438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/85439—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0102—Calcium [Ca]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/206—Length ranges
    • H01L2924/2064—Length ranges larger or equal to 1 micron less than 100 microns

Abstract

本发明的目的在于提供一种银金合金接合线，其即使是高纯度的银金合金接合线，相较于目前为止相同组成成分的银金合金，对于在树脂密封情况下的热冲击性发挥较优异的效果。另外，本发明的目的是提供一种卷绕于滚动条上的银金合金接合线的退绕性良好的银金合金接合线。本发明的银金合金接合线，其特征为：在由银金合金所形成的接合线中，以质量百分比来说，含有10％以上30％以下的金(Au)、含有30ppm以上90ppm以下的钙(Ca)，剩余部分由上述元素以外的金属元素的纯度99.99％以上的银(Ag)所形成的合金，在该合金的表层形成氧(O)和钙(Ca)的浓化层，且在该表层的正下层形成金浓化层。

Description

银金合金接合线
技术领域
本发明是关于一种银金合金接合线，其适合用于半导体装置的IC芯片电极及外部引线等的基板连接，特别是关于一种在高亮度LED、功率半导体或车用等高温环境下使用的银金合金接合线。
背景技术
以往，为了将IC、LSI等的半导体装置的IC芯片电极与外部引线连接，而使用线径20～50μm左右的接合线。接合线一般主要是使用导电性优良的金属、即以纯度4N(99.99质量％)的金合金所形成的细线。因为现今半导体封装品的高密度化、小型化以及薄型化等需求，故金合金接合线的线径在25μm以下、甚至20μm以下这样的细线化的倾向增加。接着，因降低成本的要求，亦开始研究以银合金接合线作为金合金接合线的替代材料。该银合金接合线的线径比金合金粗，一般为30μm左右。
一般而言，银金合金接合线与金合金接合线亦以相同的接合方式接合。亦即，分别使用下述方式：将银金合金接合线与该电极的第一接合称为球形接合，并将银金合金接合线与该半导体用电路配线基板上之配线的第二接合称为楔形接合。
第一接合的球形接合，是藉由焊球(FAB)，在银金合金接合线的前端施予热电弧的方式，使该前端部溶融后，再利用表面张力使溶融物凝固，藉此在银金合金接合线的前端形成称为初始球体的球。接着，是以在150～300℃的范围内加热的同时，施加超音波而进行压接的方式，使该初始球体与该电极接合。
另一方面，第二接合的楔形接合，将银金合金接合线直接在150～300℃范围内加热的同时，施加超音波而将银金合金接合线压接于加热至一定温度的电路配线基板上的配线的方式，使银金合金接合线与该配线接合。接着，使银金合金接合线与电极或配线接合后，注入热硬化性的环氧树脂或有机硅(silicone)树脂之后进行凝固，经由所谓的树脂压模步骤，封装半导体组件。
目前为止，已开发各种由银金合金所形成的银金合金接合线，例如，日本特开平11-288962号公报(后述专利文献1)揭示了一种银金合金接合线，是以「提供一种由Ag合金所形成的接合线，其可对应半导体装置的低成本化，并具有与芯片或外部引线的高接合可靠度」作为其目的(段落0005)，并在实施例No.20中，揭示了藉由将「Au：40.0重量％、Ca：0.0005重量％、Ge：0.0005重量％、Ag：剩余的重量％」所构成的Ag合金溶解铸造后，以所得到的铸锭进行伸线加工的银金合金接合线。
另外，在日本特开2009-33127号公报(后述专利文献2)中揭示，「为了制造银金合金接合线，可利用下列方法：首先可将高纯度的Au及高纯度的Ag作为原料进行秤重之后，在高真空下或是氮气或氩气等惰性气体下加热该些原料使其溶解，进而得到铸锭，并使用金属模将此铸锭伸线至最后的芯材直径(段落0036)。…(中间省略)…，若使该Ag含量为55～90质量％，则会降低接合线的电阻率，故适合将接合线应用于要求高速反应性装置的情况。另外，若Ag含量在此范围中，则可减少大量的Au，故亦可一并得到抑制Au材料费用高涨的效果(段落0040)」。此处，因银(Ag)容易与空气中的硫(S)结合形成硫化物，故金(Au)的高含量是为了要防止该硫化物的形成。
然而，相较于金合金接合线，以树脂密封的银合金接合线的抗热冲击性较差，故还未将其使用在实际的半导体封装上。特别是于高亮度LED或汽车等高温半导体的用途中，施加于银金合金接合线的热负载有增加的倾向，因此不采用抗热冲击性较差的银金合金接合线。亦即，银金合金接合线与有机硅树脂或环氧树脂等压膜树脂的密合性优于金合金接合线，因此，随着压膜树脂的伸缩，具有「第一接合的球颈部等或第二接合的接合处断线」的问题。
另外，银金合金接合线与金合金接合线相同，在连续伸线之后，进行一般的调质热处理，再卷绕于滚动条上。然而，因融点低的银金合金接合线亦使用高纯度的金(Au)和银(Ag)，故会有卷绕在滚动条上的线彼此互相黏附的问题。
【专利文献】
【专利文献1】日本特开平11-288962号公报
【专利文献2】日本特开2009-33127号公报
发明内容
【发明所要解决的课题】
本发明是为了解决上述问题所完成的，其目的在于提供一种银金合金接合线，其即使是高纯度的银金合金接合线，相较于与目前为止相同组成成分的银金合金，亦对于在树脂密封情况下的热冲击性发挥优异的效果。另外，本发明的目的是提供一种卷绕于滚动条上的银金合金接合线其退绕性良好的银金合金接合线。
【解决课题的手段】
本发明是藉由在银金合金接合线表面的氧和钙(Ca)的浓化层，以减少接合线的金属露出面的方式，提升接合线的退绕性及压膜树脂的流动性的银金合金接合线。另外，本发明中，是藉由在银金合金接合线表层的正下层形成金浓化层，防止硫(S)或氧入侵，以维持和以往相同的接合线特性。
本案发明人为了解决上述问题，作为银金合金接合线的表面特性，是利用银(Ag)比金(Au)容易在大气中受到硫(S)或微量的卤素物质等影响，而易产生化学变化的特性。具体而言，在银金合金的溶解铸造过程中，若藉由连续铸造等冷却时间较长的方式进行铸造，则会使铸锭的最外层形成银(Ag)浓化层。在习知的铜模具或经冷却的碳模具中所铸造的银金合金之中，并不会形成该银(Ag)浓化层。
接着，若具有该银(Ag)浓化层，则会发现添加于银金合金中微量的钙(Ca)会在线表面浓化。亦即，在铸锭表面的钙(Ca)是与空气中的氧结合，而作为氧化钙被固定。其次，银(Ag)浓化层的钙(Ca)被大气中的氧所吸引而在铸锭的表面氧化。于是，由银金合金内部向银(Ag)浓化层补充新的钙(Ca)。重复该等反应的结果，是在缩径的线的整个表面，堆积氧和钙(Ca)的浓化层，而会有在合金的表层形成氧和钙(Ca)的浓化层的结果。
另一方面，在以往的金合金表面中，钙(Ca)虽进行表面氧化，但金合金内部的钙(Ca)未进行氧化而无内部氧化。另外，因金合金中的钙(Ca)不会在金母材中移动，故以往的金合金表面的氧化钙不会增加。另外，在金(Au)含量少的银合金内部，银合金中的钙(Ca)虽不会在银母材中移动，但因为氧会穿透银母材，故银母材中的钙(Ca)会在内部被氧化而被固定。亦即，经表面氧化的氧化钙被固定于银合金表面，经内部氧化的氧化钙被固定于银母材，不会移动到表面。因此，银合金表面的氧化钙亦不会增加，而不会形成钙(Ca)浓化层。
为解决本发明的课题，于申请专利范围第1项所记载的银金合金接合线，其特征为：在由银金合金所形成的接合线中，在质量百分比之下，含有10％以上30％以下的金(Au)，并含有30ppm以上90ppm以下的钙(Ca)，剩余部分由上述元素以外的金属元素纯度99.99％以上的银(Ag)所形成的合金，该合金的表层形成氧和钙(Ca)的浓化层，且该表层的正下层形成有金浓化层。
接合线的回线(loop)特性或倾斜(leaning)等一般的机械特性，是与接合线的线径的三次方成正比。于是，本发明的银金合金接合线中，其银金合金的组成成分如上述所定义，是以可形成强韧接合线的方式选择。另一方面，因为压膜树脂的密合性乃至流动性，与线径的平方成正比，并且亦与线的表面特性高度相依，故为如上所述的构成。
附图说明
图1是在本发明的接合线中深度方向的欧杰分析结果。
图2是显示接合线的退绕性良好的图。
图3是显示接合线的退绕性不良的图。
具体实施方式
本发明的银金合金接合线中，上述的金(Au)的质量百分比，在15％以上25％以下佳，在18％以上23％以下较佳。
另外，本发明的银金合金接合线中，较佳是在上述表层的正上层存在有碳层。
另外，本发明的银金合金接合线中，上述金浓化层的金(Au)含量较佳是多于上述表层的金(Au)含量10％以上。
另外，本发明的银金合金接合线中，上述表层少于10nm为佳。
另外，本发明的银金合金接合线中，该线径在30μm以下为佳。在25μm以下更佳。可配合LED等用途适当地选择银金合金接合线的线径。
本发明的银金合金接合线所使用的原料银(Ag)及金(Au)，是以达成提升电阻系数(electrical resistivity)及减少溶解铸造后的氧化性夹杂物为目的，故必需使用纯度99.99质量％以上的高纯度银(Ag)及金(Au)。因此，其是金(Au)及钙(Ca)以外的金属元素纯度99.99％以上的银(Ag)所形成的合金。
使用纯度99.999质量％以上的高纯度银(Ag)及金(Au)较佳。亦即，若对于使用较高纯度的银(Ag)及金(Au)的银金合金进行连续铸造等，则容易在银金合金接合线的表面形成10nm左右的银浓化层。另一方面，若藉由一般的铜模具或经水冷的碳模具来制造铸锭，因铸锭被急遽冷却，故不会在银金合金接合线的表面形成10nm左右的银浓化层。
金(Au)是提升银金合金接合线的抗硫化性的元素，其含量在10质量％以上则可防止银金合金接合线的硫化。另一方面，若使金(Au)的含量增加，则会使银金合金接合线的电阻上升。可得知在含有10％以上30％以下金(Au)的银金合金接合线中，其金浓化层形成于表层的正下层，而氧或硫(S)的入侵在此处停止。吾人认为，在表层与金浓化层之间形成电池。于是，使金(Au)在10％以上30％以下，从实用的观点来看，在15％以上25％以下为佳，在18％以上23％以下较佳。
选择钙(Ca)作为添加元素的原因，是因为若具有银(Ag)浓化层，则钙(Ca)会与空气中的氧进行反应而在银金合金接合线的表面形成氧与钙(Ca)的浓化层。钙(Ca)在金接合线中虽为周知的添加元素，但如上所述，金母材中的钙(Ca)并不会和空气中的氧(O)进行反应，同样地，银母材中的钙(Ca)虽在母材内进行内部氧化，但并不会在表层形成浓化层。
可藉由表层的正上层存在碳层，来确认在本发明的银金合金接合线的表面存在有氧和钙(Ca)的浓化层。亦即，在将本发明的银金合金接合线浸渍于表面活性剂的稀薄溶液中之后用水清洗，亦可检测出碳层。然而，即使将纯度99.999质量％的纯金合金接合线或纯度99.999质量％的银合金接合线同样地浸渍于表面活性剂的稀释溶液中之后用水清洗，亦无法检测出碳层。此暗示碳层藉由氧和钙(Ca)的浓化层紧密连结。另一方面，因为氧和钙(Ca)的浓化层的存在，会阻碍接合线的回线特性或倾斜等一般的机械特性，故上述表层未满10nm为佳。
使钙(Ca)的含量为30ppm以上90ppm以下，是因为即使银金合金接合线的线径细至20μm以下，亦可避免在压模后的热冲击试验中发生线剥落的情况。为了避免线剥落发生，线表面必须有一定程度的氧和钙(Ca)的浓化层，其中，钙(Ca)含量至少必须在30ppm以上。另一方面，若钙(Ca)的含量超过90ppm，因接合线本身硬化，在细线化步骤中容易断线。钙(Ca)的含量在40ppm以上60ppm以下为佳。
另外，为了避免断线，银金合金接合线的线径，在30μm以下为佳，在25μm以下较佳。
【发明的效果】
本发明的银金合金接合线，适合作为LED等封装用银金合金接合线，其对在树脂密封情况下的热冲击性发挥优异的效果。另外，本发明的银金合金接合线，即使在高温放置后，亦在从滚动条的退绕性方面，发挥优异的效果。
【实施例】
以下说明实施例。
准备纯度99.999质量％以上的高纯度银(Ag)和金(Au)作为银金合金接合线的原料。如表1左栏所示，预先调整组成成分之后，在惰性气体中进行溶解，而以该溶融金属的状态进行连续铸造，得到直径10mm的银金合金粗线。
之后，在大气中对该等银金合金粗线进行伸线，使其伸线至既定的直径2mm后，再进行600℃的中间热处理。在该等线之中，对于实施例1的线，更藉由湿式的连续伸线，使其伸线至直径为25μm后，再进行500℃的调质热处理。从该线的表层朝中心方向进行深度方向的欧杰分析。分析装置是用英国VG Scientific公司制的扫描式欧杰电子显微镜MICROLAB-310D，以加速电压10kV及试样电流20nA进行分析。其结果如第一图所示。
从第一图可清楚发现，实施例1的线，大约至8nm的深度，存在碳层，而大气中的硫(S)则附着在表面。另外，因亦检测出氧，故得知在银金合金中的钙(Ca)形成了氧化物。接着，得知氧和硫(S)的入侵，在约8nm处，即金(Au)浓化层最大之处停止。另外，详细地研究金(Au)和银(Ag)的曲线后得知，表面的金(Au)和银(Ag)的比例(原子％)，与大约25nm以下的金(Au)和银(Ag)的比例(原子％)相同。
另外，使用相同装置，从上述线的最表面朝深度方向以每分钟蚀刻18nm的方式进行银(Ag)的定性分析，其得到与第一图相同的结果。
另一方面，由上述直径约2mm的银金合金粗线在大气中进行湿式的连续伸线，针对表1的实施例1至6的线材，将其伸线至既定的直径20μm后，再进行500℃的调质热处理，藉此得到伸展率为4％的银金合金接合线。
对于这样制造的银金合金接合线，以下述方式评估其线的退绕性和与压膜树脂的密合性。该评估结果如表1右栏所示。
线的退绕试验：
将组成成分如表1左栏所示的接合线，卷绕于滚动条(直径50mm)上，是一边使滚动条以每分钟9转的旋转速度旋转15分钟，一边从30cm的高度悬垂接合线的方式退绕接合线，并根据接合线卷出的位置，来评估接合线的退绕性。亦即，接合线(1)从滚动条卷出的位置(2)在如第二图中的A区域，则评估为良好(○)；在如第三图中的B区域以下至D区域的区域，则评估为不良(×)。对于各评估等级进行五个试样的评估。
与压膜树脂的密合性评估试验：
在具有20脚的镀银(Ag)Fe-Ni合金制的引线框架上，搭载模拟半导体的A1焊垫，使用新川股份有限公司制的通用接合装置(型号：UTC-1000型)，对于表1左栏的合金组成的接合线进行FAB接合。藉由40μm的溶融球体，以成为压接直径50μm的方式进行第一球形接合，再绘制既定回路以基板温度150℃、超音波输出0.25W、10毫秒的条件，进行超音波接合的第二接合。接着，藉由市售用于LED的有机硅树脂填充仿真半导体芯片及引线框架。在该树脂压模的状态下，进行1000次循环的150℃/-55℃的热循环试验后，将压膜树脂开封，观察第二接合的剥落情况。在表1右栏中分别显示在试样数量＝200时所得到的剥落率，其中，◎为0％，○为1％以下，Δ为1％以上、未满3％。
【表1】
[比较例1～2]
在表1左栏中，是显示实施例与金(Au)和钙(Ca)的组成成分在范围外的比较例的各组成成分。比较例的银金合金极细线是以和实施例相同的方式，在线径15μm之处进行最终热处理，以将其伸展率调整为4％，并和实施例1进行相同的评估。该结果如表1右栏所示。虽在「球颈部」及「球颈部与未再结晶部分的边界附近」，观察到比较例1及比较例2的断裂部分，但第二接合的接合处亦很可能断裂。
由上述的结果可清楚得知，本发明的银金合金接合线，其组成成分只要在既定的范围内，即具有优异的高温伸展率，即使在重复热循环的严苛环境下，亦可得到令人满意的效果。另外，在接合线的退绕性中，亦得到优异的效果。
【产业上的可利用性】
本发明的银金合金接合线，是使用于接受重复热循环的领域，例如，发光二极管或倒装芯片封装、应用无铅焊接的装置等的接合线。另外，本发明是使用于包含上述应用装置并接受严苛的热冲击的领域，例如，在热电装置用或车用基板半导体用等领域中的接合线。因此，对半导体设备的制造技术领域具有很大的贡献。
【符号说明】
1 接合线
2 线卷出的位置

Claims (5)

1.一种银金合金接合线，其特征为：在由银金合金所形成的接合线中，在质量百分比之下，含有10％以上30％以下的金(Au)，含有30ppm以上90ppm以下的钙(Ca)，剩余部分由上述元素以外的金属元素纯度99.99％以上的银(Ag)所形成的合金，在该合金的表层形成有氧和钙(Ca)的浓化层，且在该表层的正下层形成有金浓化层。
2.如权利要求1所述的银金合金接合线，其中，上述金(Au)的质量百分比为15％以上25％以下。
3.如权利要求1所述的银金合金接合线，其中，碳层存在于上述表层的正上层。
4.如权利要求1所述的银金合金接合线，其中，上述金浓化层的金(Au)含量多于上述表层的金(Au)含量10％以上。
5.如权利要求1所述的银金合金接合线，其中，上述表层小于10nm。
CN201510193619.3A 2014-09-26 2015-04-22 银金合金接合线 Active CN106158675B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014-196419 2014-09-26
JP2014196419A JP5669335B1 (ja) 2014-09-26 2014-09-26 銀金合金ボンディングワイヤ

Publications (2)

Publication Number Publication Date
CN106158675A true CN106158675A (zh) 2016-11-23
CN106158675B CN106158675B (zh) 2019-02-26

Family

ID=52569575

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201510193619.3A Active CN106158675B (zh) 2014-09-26 2015-04-22 银金合金接合线

Country Status (6)

Country Link
US (1) US9362249B2 (zh)
JP (1) JP5669335B1 (zh)
KR (1) KR101912983B1 (zh)
CN (1) CN106158675B (zh)
SG (1) SG10201500653UA (zh)
TW (1) TWI527913B (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101885872B1 (ko) 2018-04-19 2018-08-07 최창훈 변기커버를 이용하는 변기용 물내림장치

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120263624A1 (en) * 2011-02-10 2012-10-18 Tanaka Denshi Kogyo K.K. Ag-Au-Pd TERNARY ALLOY BONDING WIRE
CN103194637A (zh) * 2013-04-27 2013-07-10 烟台招金励福贵金属股份有限公司 一种键合合金银丝及制备方法
CN103789568A (zh) * 2014-02-18 2014-05-14 浙江佳博科技股份有限公司 一种合金键合丝及其制备方法及应用
JP5507730B1 (ja) * 2013-04-02 2014-05-28 田中電子工業株式会社 ボールボンディング用貴金属希薄銀合金ワイヤ

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11288962A (ja) 1998-04-01 1999-10-19 Sumitomo Metal Mining Co Ltd ボンディングワイヤ
JP4722576B2 (ja) * 2004-06-16 2011-07-13 新日鉄マテリアルズ株式会社 半導体実装用ボンディングワイヤの製造方法
KR101019811B1 (ko) * 2005-01-05 2011-03-04 신닛테츠 마테리알즈 가부시키가이샤 반도체 장치용 본딩 와이어
JP5116101B2 (ja) * 2007-06-28 2013-01-09 新日鉄住金マテリアルズ株式会社 半導体実装用ボンディングワイヤ及びその製造方法
DE102012200273A1 (de) * 2012-01-11 2013-07-11 Robert Bosch Gmbh Elektronisches Bauteil mit korrosionsgeschützter Bondverbindung und Verfahren zur Herstellung des Bauteils
CN102912176B (zh) 2012-09-21 2014-12-17 宁波康强电子股份有限公司 高端封装银合金键合丝及其制备方法
JP5399581B1 (ja) * 2013-05-14 2014-01-29 田中電子工業株式会社 高速信号用ボンディングワイヤ

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120263624A1 (en) * 2011-02-10 2012-10-18 Tanaka Denshi Kogyo K.K. Ag-Au-Pd TERNARY ALLOY BONDING WIRE
JP5507730B1 (ja) * 2013-04-02 2014-05-28 田中電子工業株式会社 ボールボンディング用貴金属希薄銀合金ワイヤ
CN103194637A (zh) * 2013-04-27 2013-07-10 烟台招金励福贵金属股份有限公司 一种键合合金银丝及制备方法
CN103789568A (zh) * 2014-02-18 2014-05-14 浙江佳博科技股份有限公司 一种合金键合丝及其制备方法及应用

Also Published As

Publication number Publication date
TWI527913B (zh) 2016-04-01
US20160093586A1 (en) 2016-03-31
US9362249B2 (en) 2016-06-07
CN106158675B (zh) 2019-02-26
JP2016072261A (ja) 2016-05-09
SG10201500653UA (en) 2016-04-28
KR101912983B1 (ko) 2018-10-29
TW201612324A (en) 2016-04-01
JP5669335B1 (ja) 2015-02-12
KR20160037049A (ko) 2016-04-05

Similar Documents

Publication Publication Date Title
US8101030B2 (en) Manufacturing method for composite alloy bonding wire
CN109003903B (zh) 一种键合金丝及其制备方法
CN102776405B (zh) 一种键合金银合金丝的制备方法
TWI490996B (zh) 接合用導線
TW201233817A (en) Silver-gold-palladium ternary alloy bonding wire
JP7168779B2 (ja) パラジウム被覆銅ボンディングワイヤ、パラジウム被覆銅ボンディングワイヤの製造方法、これを用いた半導体装置及びその製造方法
JP5671512B2 (ja) ボンディング用ワイヤ
CN108183075A (zh) 一种银合金键合丝及其制造方法
JP2012151350A (ja) ボールボンディング用ワイヤ
JP2010245390A (ja) ボンディングワイヤ
CN107958890A (zh) 球焊用铜合金线
JP2010171378A (ja) 合金線およびその製造方法
CN108922876A (zh) 一种金合金键合丝及其制造方法
CN106158675A (zh) 银金合金接合线
CN108796285A (zh) 一种银合金键合丝及其制造方法
CN110284023A (zh) 一种铜合金键合丝及其制备方法和应用
CN106811617A (zh) 一种键合金银合金的制备方法
CN109473413A (zh) 一种抗氧化的铜基键合丝及其制备方法
JP6343197B2 (ja) ボンディング用ワイヤ
CN108701622A (zh) 接合线
JP2013135042A (ja) ボールボンディング用ワイヤ
US20090191088A1 (en) Manufacturing method for a composite metal bonding wire and products thereof
CN104218012A (zh) 金属焊线及其制造方法
CN105006513B (zh) 银合金线材
KR101618223B1 (ko) 반도체 패키지 본딩 와이어 및 이를 포함하는 반도체 패키지

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant