CN106134051B - 驱动装置 - Google Patents

驱动装置 Download PDF

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Publication number
CN106134051B
CN106134051B CN201580015855.4A CN201580015855A CN106134051B CN 106134051 B CN106134051 B CN 106134051B CN 201580015855 A CN201580015855 A CN 201580015855A CN 106134051 B CN106134051 B CN 106134051B
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CN
China
Prior art keywords
mos transistor
current
grid
sensing
circuit
Prior art date
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Active
Application number
CN201580015855.4A
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English (en)
Chinese (zh)
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CN106134051A (zh
Inventor
长濑拓生
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
Denso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denso Corp filed Critical Denso Corp
Publication of CN106134051A publication Critical patent/CN106134051A/zh
Application granted granted Critical
Publication of CN106134051B publication Critical patent/CN106134051B/zh
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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0828—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in composite switches
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/32—Means for protecting converters other than automatic disconnection
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/168—Modifications for eliminating interference voltages or currents in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/30—Modifications for providing a predetermined threshold before switching
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6877—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the control circuit comprising active elements different from those used in the output circuit
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/0003—Details of control, feedback or regulation circuits
    • H02M1/0009—Devices or circuits for detecting current in a converter
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/0048—Circuits or arrangements for reducing losses
    • H02M1/0054—Transistor switching losses
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0036—Means reducing energy consumption
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Power Conversion In General (AREA)
  • Electronic Switches (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CN201580015855.4A 2014-03-27 2015-03-12 驱动装置 Active CN106134051B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2014066596A JP6349855B2 (ja) 2014-03-27 2014-03-27 駆動装置
JP2014-066596 2014-03-27
PCT/JP2015/001365 WO2015146040A1 (ja) 2014-03-27 2015-03-12 駆動装置

Publications (2)

Publication Number Publication Date
CN106134051A CN106134051A (zh) 2016-11-16
CN106134051B true CN106134051B (zh) 2018-10-30

Family

ID=54194594

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201580015855.4A Active CN106134051B (zh) 2014-03-27 2015-03-12 驱动装置

Country Status (4)

Country Link
US (1) US9722594B2 (enExample)
JP (1) JP6349855B2 (enExample)
CN (1) CN106134051B (enExample)
WO (1) WO2015146040A1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6498473B2 (ja) * 2015-02-24 2019-04-10 ローム株式会社 スイッチ駆動回路
JP6671003B2 (ja) * 2016-03-16 2020-03-25 パナソニックＩｐマネジメント株式会社 電力変換回路
JP6669638B2 (ja) * 2016-11-29 2020-03-18 トヨタ自動車株式会社 スイッチング回路
JP6890480B2 (ja) * 2017-06-19 2021-06-18 日立Astemo株式会社 半導体装置
US10218258B1 (en) * 2018-01-09 2019-02-26 Dialog Semiconductor (Uk) Limited Apparatus and method for driving a power stage
JP7200522B2 (ja) * 2018-07-12 2023-01-10 株式会社デンソー ゲート駆動回路
US11881846B2 (en) * 2018-11-06 2024-01-23 Hitachi Astemo, Ltd. Load drive device and transmission drive system
DE112020000135T5 (de) * 2019-06-19 2021-07-29 Fuji Electric Co., Ltd. Leistungswandler
JP7490946B2 (ja) * 2019-11-13 2024-05-28 富士電機株式会社 ゲート駆動装置及び電力変換装置
CN111736054B (zh) * 2020-06-23 2022-09-16 中国南方电网有限责任公司超高压输电公司 用于igbt驱动退饱和保护功能的测试电路和其模拟测试方法
KR102818359B1 (ko) * 2021-01-12 2025-06-11 주식회사 엘지에너지솔루션 릴레이 구동회로 및 이를 포함하는 배터리 시스템
CN115566909A (zh) * 2022-10-10 2023-01-03 思瑞浦微电子科技（苏州）股份有限公司 恒流保护电路及推挽变换器
CN116707501B (zh) * 2023-08-03 2023-10-31 无锡市稳先微电子有限公司 智能电子开关、集成电路芯片、芯片产品和汽车
CN117879554B (zh) * 2023-12-29 2024-08-23 无锡市稳先微电子有限公司 控制芯片、智能电子开关和汽车

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1256556A (zh) * 1998-12-03 2000-06-14 株式会社日立制作所 电压驱动开关元件的栅极驱动电路
JP4954290B2 (ja) * 2007-10-02 2012-06-13 三菱電機株式会社 ゲート駆動回路

Family Cites Families (12)

* Cited by examiner, † Cited by third party
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US5500619A (en) 1992-03-18 1996-03-19 Fuji Electric Co., Ltd. Semiconductor device
JP3152204B2 (ja) 1998-06-02 2001-04-03 日本電気株式会社 スルーレート出力回路
JP3941309B2 (ja) * 1998-12-03 2007-07-04 株式会社日立製作所 電圧駆動形スイッチング素子のゲート駆動回路
JP3598870B2 (ja) 1999-04-07 2004-12-08 富士電機デバイステクノロジー株式会社 ドライブ回路
JP2001223571A (ja) 2000-02-10 2001-08-17 Fuji Electric Co Ltd 電圧駆動型半導体素子のゲート駆動装置
US7132868B2 (en) 2001-06-27 2006-11-07 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
JP4619812B2 (ja) 2005-02-16 2011-01-26 株式会社東芝 ゲート駆動回路
JP5098872B2 (ja) 2008-07-25 2012-12-12 株式会社デンソー 電力変換回路の駆動回路
US8760144B2 (en) 2010-06-28 2014-06-24 Wuxi Vimicro Corporation Multiple-input comparator and power converter
JP5252055B2 (ja) * 2010-11-22 2013-07-31 株式会社デンソー 負荷駆動装置
JP5569460B2 (ja) 2011-04-21 2014-08-13 株式会社デンソー 負荷駆動装置
JP5939095B2 (ja) * 2012-09-05 2016-06-22 株式会社デンソー スイッチング素子の駆動回路

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1256556A (zh) * 1998-12-03 2000-06-14 株式会社日立制作所 电压驱动开关元件的栅极驱动电路
JP4954290B2 (ja) * 2007-10-02 2012-06-13 三菱電機株式会社 ゲート駆動回路

Also Published As

Publication number Publication date
WO2015146040A1 (ja) 2015-10-01
JP2015192490A (ja) 2015-11-02
US20160352320A1 (en) 2016-12-01
CN106134051A (zh) 2016-11-16
US9722594B2 (en) 2017-08-01
JP6349855B2 (ja) 2018-07-04

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