CN106130483B - 一种压控振荡器调谐电路中的可变电容电路 - Google Patents

一种压控振荡器调谐电路中的可变电容电路 Download PDF

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CN106130483B
CN106130483B CN201610446825.5A CN201610446825A CN106130483B CN 106130483 B CN106130483 B CN 106130483B CN 201610446825 A CN201610446825 A CN 201610446825A CN 106130483 B CN106130483 B CN 106130483B
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controlled oscillator
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variable capacitance
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CN106130483A (zh
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吉新村
夏晓娟
郭宇锋
王子轩
丁敏
徐严
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Jiangsu Chengye Intelligent Technology Development Co.,Ltd.
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Nanjing Post and Telecommunication University
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1206—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
    • H03B5/124—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance
    • H03B5/1246—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance the means comprising transistors used to provide a variable capacitance
    • H03B5/1253—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance the means comprising transistors used to provide a variable capacitance the transistors being field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
    • H03L7/00—Automatic control of frequency or phase; Synchronisation
    • H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
    • H03L7/08—Details of the phase-locked loop
    • H03L7/099—Details of the phase-locked loop concerning mainly the controlled oscillator of the loop
    • H03L7/0995—Details of the phase-locked loop concerning mainly the controlled oscillator of the loop the oscillator comprising a ring oscillator

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  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)

Abstract

一种压控振荡器调谐电路中的可变电容电路，该可变电容电路由积累型AMOS晶体管与PMOS晶体管并联构成，连接于压控振荡器电压输出端VB和调谐电压控制端VC之间，PMOS晶体管的源极和漏极接地，PMOS晶体管的衬底连接调谐电压控制端VC，PMOS晶体管的栅极连接压控振荡器电压输出端VB，使PMOS晶体管工作于积累区和耗尽区；AMOS晶体管的栅极连接压控振荡器电压输出端VB，AMOS晶体管的源极、漏极以及衬底共同与调谐电压控制端VC连接；可变电容值由PMOS晶体管的栅极‑衬底电容与积累型AMOS晶体管的栅极‑衬底电容合成，通过调谐电压控制可变电容的大小，以改变振荡频率。

Description

一种压控振荡器调谐电路中的可变电容电路
技术领域
本发明涉及压控振荡器，尤其涉及一种压控振荡器调谐电路中的可变电容电路。
背景技术
压控振荡器(VCO)通过输入控制电压改变输出频率，用于产生频率可调的振荡频率，是射频和模拟集成电路领域中的基本单元。压控振荡器的压控增益定义为振荡器频率对调谐电压灵敏度，压控增益对锁相环环路特性、相位噪声等有重要影响。在压控振荡器的设计上，要求压控增益在控制电压变化时尽量保持稳定。可变电容应用在压控振荡器中，作为频率调谐。压控振荡器包括LC压控振荡器、环形振荡器和张弛振荡器等。
压控振荡器调谐电路中的可变电容可以由PMOS、PN二极管或者积累型AMOS构成。其中PMOS作为可变电容，一般将PMOS源极、漏极和PMOS衬底短接并连接于电压调谐端，使PMOS工作于反型区和耗尽区获得单调的电容-电压特性，但是PMOS电容反型区电容-电压特性陡峭，调谐增益变化大。而AMOS作为可变电容虽然频率特性优于PMOS晶体管的可变电容，但是在调谐曲线的两端仍然存在调谐增益变化大的缺点。
发明内容
本发明的目的在于提供一种压控振荡器调谐电路中的可变电容器件，可降低不同调谐电压时的压控增益的变化。
为实现上述发明目的，本发明采用以下技术方案：一种压控振荡器调谐电路中的可变电容电路，其特征在于：该可变电容电路由积累型AMOS晶体管与PMOS晶体管并联构成，连接于压控振荡器电压输出端VB和调谐电压控制端VC之间，PMOS晶体管的源极和漏极接地，PMOS晶体管的衬底连接调谐电压控制端VC，PMOS晶体管的栅极连接压控振荡器电压输出端VB，使PMOS晶体管工作于积累区和耗尽区；AMOS晶体管的栅极连接压控振荡器电压输出端VB，AMOS晶体管的源极、漏极以及衬底共同与调谐电压控制端VC连接；可变电容值由PMOS晶体管的栅极-衬底电容与积累型AMOS晶体管的栅极-衬底电容合成，通过调谐电压控制可变电容的大小，以改变振荡频率。
可以采用两个积累型AMOS晶体管与两个PMOS晶体管分别并联，再将该两个并联结构串联，构成差分型可变电容电路，压控振荡器电压输出端VB+连接一对积累型AMOS晶体管的栅极和PMOS晶体管的栅极，压控振荡器电压输出端VB-连接另一对积累型AMOS晶体管的栅极和PMOS晶体管的栅极，调谐电压控制端VC施加于两对PMOS晶体管的衬底和积累型AMOS晶体管的衬底。
本发明的优点及有益效果：本发明使用AMOS和PMOS晶体管并联构成可变电容，将PMOS晶体管源极和漏极接地，使PMOS晶体管工作于积累区和耗尽区，这样，AMOS可变电容-电压特性变化大的缺点，能够通过PMOS的补偿，降低了压控振荡器压控增益的变化。
附图说明
图1为本发明的可变电容电路图，由PMOS和积累型AMOS并联构成；
图2为差分型可变电容电路图；
图3为采用本发明的可变电容的LC压控振荡器电路示意图；
图4为电容-电压调谐曲线示意图；
图5为环形振荡器电路图；
图6为采用本发明的可变电容构成的环形振荡器延迟单元电路图。
具体实施方式
下面结合附图对本发明进行详细说明。
如图1，本发明压控振荡器调谐电路中的可变电容电路，该可变电容电路由积累型AMOS晶体管2与PMOS晶体管1并联构成，连接于压控振荡器电压输出端VB和调谐电压控制端VC之间，PMOS晶体管的源极和漏极接地，PMOS晶体管的衬底连接调谐电压控制端VC，PMOS晶体管的栅极连接压控振荡器电压输出端VB，使PMOS晶体管工作于积累区和耗尽区；AMOS晶体管的栅极连接压控振荡器电压输出端VB，AMOS晶体管的源极、漏极以及衬底共同与调谐电压控制端VC连接；可变电容值由PMOS晶体管的栅极-衬底电容与积累型AMOS晶体管的栅极-衬底电容合成，通过调谐电压控制可变电容的大小，以改变振荡频率。
如图2，本发明实际应用时，可以采用两个积累型AMOS晶体管2与两个PMOS晶体管1分别并联，再将该两个并联结构串联，构成差分型可变电容电路，压控振荡器电压输出端VB+连接一对积累型AMOS晶体管的栅极和PMOS晶体管的栅极，压控振荡器电压输出端VB-连接另一对积累型AMOS晶体管的栅极和PMOS晶体管的栅极，调谐电压控制端VC施加于两对PMOS晶体管的衬底和积累型AMOS晶体管的衬底。
如图3，为本发明应用于现有LC压控振荡器压控振荡器的实施例。LC压控振荡器包括负阻产生电路和调谐电路。负阻产生电路包括NMOS管3和NMOS管4构成交叉耦合结构，连接于压控振荡器两输出端之间，PMOS管8和NMOS管9构成交叉耦合结构，连接于压控振荡器两输出端之间。调谐电路由两个积累型AMOS晶体管2与两个PMOS晶体管1分别并联，再将该两个并联结构串联后再与电感7并联构成，连接在压控振荡器两输出端之间。
如图4，可以看出，采用PMOS管作为可变电容时，电容反型区电容-电压特性陡峭，调谐增益变化大。而采用AMOS管作为可变电容时，在控制电压变化过程中，AMOS电容依次工作于耗尽区和积累区，电容Cgg逐渐从氧化层电容COX变化为栅氧化层电容COX和耗尽区电容CJ的串联，但由于深积累区和深耗尽区时电容CJ变化减缓，造成压控振荡器增益下降。虽然频率特性优于PMOS晶体管的可变电容，但是在调谐曲线的两端仍然存在调谐增益变化大的缺点。采用本发明时，PMOS等效电容Cgg在这一电压变化区间依次工作于反型区、耗尽区和积累区，随着控制电压的变化，PMOS从反型区向耗尽区变化,电容降低，当栅电压等于衬底电压时，PMOS从耗尽区向积累区变化，电容增加。通过AMOS和PMOS电容的并联，增加了AMOS在控制电压两端时电容，从而保证了电容变化的线性度，降低了压控振荡器压控增益的变化。
如图5，为本发明应用于现有环形压控振荡器的实施例。环形压控振荡器由多级相同的延迟单元(图6)构成级联反馈结构。如图6所示为其中一级的差分延迟单元电路示意图，延迟单元电路包括了放大管(NM1，NM2，PM1，PM2，PM3，PM4)和可变电容构成的频率调谐单元。其中频率调谐单元由本发明两个积累型AMOS晶体管2与两个PMOS晶体管1分别并联，再将该两个并联结构串联实现，调谐电压控制端VC与控制电压相连，电压输出端分别与延迟单元差分输出端相连，可以通过本发明可变电容降低环形振荡器频率调谐的非线性。
以上内容是结合优选技术方案对本发明所做的详细说明，不能认定发明的具体实施仅限于这些，对于在不脱离本发明思想前提下做出的简单推演及替换，都应当视为本发明的保护范围。

Claims (2)

1.一种压控振荡器调谐电路中的可变电容电路，其特征在于：该可变电容电路由积累型AMOS晶体管与PMOS晶体管并联构成，连接于压控振荡器电压输出端VB和调谐电压控制端VC之间，PMOS晶体管的源极和漏极接地，PMOS晶体管的衬底连接调谐电压控制端VC，PMOS晶体管的栅极连接压控振荡器电压输出端VB，使PMOS晶体管工作于积累区和耗尽区；AMOS晶体管的栅极连接压控振荡器电压输出端VB，AMOS晶体管的源极、漏极以及衬底共同与调谐电压控制端VC连接；可变电容值由PMOS晶体管的栅极-衬底电容与积累型AMOS晶体管的栅极-衬底电容合成，通过调谐电压控制可变电容的大小，以改变振荡频率。
2.根据权利要求1所述的压控振荡器调谐电路中的可变电容电路，其特征在于：采用两个积累型AMOS晶体管与两个PMOS晶体管分别并联，再将该两个并联结构串联，构成差分型可变电容电路，压控振荡器电压输出端VB+连接一对积累型AMOS晶体管的栅极和PMOS晶体管的栅极，压控振荡器电压输出端VB-连接另一对积累型AMOS晶体管的栅极和PMOS晶体管的栅极，调谐电压控制端VC施加于两对PMOS晶体管的衬底和积累型AMOS晶体管的衬底。
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