CN106115612A - 一种晶圆平坦化方法 - Google Patents
一种晶圆平坦化方法 Download PDFInfo
- Publication number
- CN106115612A CN106115612A CN201610540682.4A CN201610540682A CN106115612A CN 106115612 A CN106115612 A CN 106115612A CN 201610540682 A CN201610540682 A CN 201610540682A CN 106115612 A CN106115612 A CN 106115612A
- Authority
- CN
- China
- Prior art keywords
- wafer
- polishing
- abrasive
- crystal column
- column surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 39
- 238000005498 polishing Methods 0.000 claims abstract description 83
- 239000008367 deionised water Substances 0.000 claims abstract description 4
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 4
- 238000012805 post-processing Methods 0.000 claims abstract description 3
- 239000007788 liquid Substances 0.000 claims abstract 2
- 239000013078 crystal Substances 0.000 claims description 34
- 239000012530 fluid Substances 0.000 claims description 22
- 239000003082 abrasive agent Substances 0.000 claims description 19
- 239000000126 substance Substances 0.000 claims description 8
- 239000006061 abrasive grain Substances 0.000 claims description 7
- 230000007797 corrosion Effects 0.000 claims description 5
- 238000005260 corrosion Methods 0.000 claims description 5
- 238000002161 passivation Methods 0.000 claims description 5
- 239000010409 thin film Substances 0.000 claims description 5
- 230000006835 compression Effects 0.000 claims description 3
- 238000007906 compression Methods 0.000 claims description 3
- 239000000843 powder Substances 0.000 claims description 3
- 238000010301 surface-oxidation reaction Methods 0.000 claims description 3
- 230000007547 defect Effects 0.000 claims description 2
- 239000007792 gaseous phase Substances 0.000 claims description 2
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 3
- 230000002209 hydrophobic effect Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000003550 marker Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00206—Processes for functionalising a surface, e.g. provide the surface with specific mechanical, chemical or biological properties
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00642—Manufacture or treatment of devices or systems in or on a substrate for improving the physical properties of a device
- B81C1/0065—Mechanical properties
- B81C1/00674—Treatments for improving wear resistance
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Molecular Biology (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610540682.4A CN106115612B (zh) | 2016-07-11 | 2016-07-11 | 一种晶圆平坦化方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610540682.4A CN106115612B (zh) | 2016-07-11 | 2016-07-11 | 一种晶圆平坦化方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN106115612A true CN106115612A (zh) | 2016-11-16 |
CN106115612B CN106115612B (zh) | 2017-11-17 |
Family
ID=57282839
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610540682.4A Active CN106115612B (zh) | 2016-07-11 | 2016-07-11 | 一种晶圆平坦化方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN106115612B (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106878912A (zh) * | 2017-03-03 | 2017-06-20 | 瑞声科技(新加坡)有限公司 | 电容式麦克风半成品的氧化层粗糙面平坦化的方法 |
CN107052984A (zh) * | 2017-06-14 | 2017-08-18 | 北京半导体专用设备研究所(中国电子科技集团公司第四十五研究所) | 化学机械平坦化工艺中晶圆边缘区域平整度优化方法 |
CN107378747A (zh) * | 2017-07-11 | 2017-11-24 | 天津华海清科机电科技有限公司 | 用于mems器件的化学机械抛光工艺 |
CN108214260A (zh) * | 2016-12-22 | 2018-06-29 | 蓝思科技(长沙)有限公司 | 一种超薄蓝宝石晶片的抛光工艺 |
CN108747606A (zh) * | 2018-06-16 | 2018-11-06 | 佛山市同鑫智能装备科技有限公司 | 一种不锈钢管加工工艺抛光方法 |
CN109585374A (zh) * | 2017-09-28 | 2019-04-05 | 台湾积体电路制造股份有限公司 | 半导体装置结构的形成方法 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020002029A1 (en) * | 2000-06-02 | 2002-01-03 | Norio Kimura | Polishing method and apparatus |
EP1274123A1 (en) * | 2000-04-13 | 2003-01-08 | Showa Denko K.K. | Polishing compound for polishing semiconductor device and method for manufacturing semiconductor device using the same |
CN1836842A (zh) * | 2006-04-19 | 2006-09-27 | 山东大学 | 大直径高硬度6H-SiC单晶片的表面抛光方法 |
CN101428404A (zh) * | 2008-12-22 | 2009-05-13 | 南京航空航天大学 | 固结磨料研磨抛光垫及其制备方法 |
CN101817172A (zh) * | 2010-04-12 | 2010-09-01 | 南京航空航天大学 | 基于热引发固化的固结磨料研磨抛光垫及其制备方法 |
CN102172859A (zh) * | 2011-02-23 | 2011-09-07 | 南京航空航天大学 | 基于固结磨料的超薄平面玻璃的加工方法 |
CN103252708A (zh) * | 2013-05-29 | 2013-08-21 | 南京航空航天大学 | 基于固结磨料抛光垫的蓝宝石衬底的超精密加工方法 |
CN104157551A (zh) * | 2014-07-31 | 2014-11-19 | 华进半导体封装先导技术研发中心有限公司 | 键合前进行基板表面预处理的方法 |
-
2016
- 2016-07-11 CN CN201610540682.4A patent/CN106115612B/zh active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1274123A1 (en) * | 2000-04-13 | 2003-01-08 | Showa Denko K.K. | Polishing compound for polishing semiconductor device and method for manufacturing semiconductor device using the same |
US20020002029A1 (en) * | 2000-06-02 | 2002-01-03 | Norio Kimura | Polishing method and apparatus |
CN1836842A (zh) * | 2006-04-19 | 2006-09-27 | 山东大学 | 大直径高硬度6H-SiC单晶片的表面抛光方法 |
CN101428404A (zh) * | 2008-12-22 | 2009-05-13 | 南京航空航天大学 | 固结磨料研磨抛光垫及其制备方法 |
CN101817172A (zh) * | 2010-04-12 | 2010-09-01 | 南京航空航天大学 | 基于热引发固化的固结磨料研磨抛光垫及其制备方法 |
CN102172859A (zh) * | 2011-02-23 | 2011-09-07 | 南京航空航天大学 | 基于固结磨料的超薄平面玻璃的加工方法 |
CN103252708A (zh) * | 2013-05-29 | 2013-08-21 | 南京航空航天大学 | 基于固结磨料抛光垫的蓝宝石衬底的超精密加工方法 |
CN104157551A (zh) * | 2014-07-31 | 2014-11-19 | 华进半导体封装先导技术研发中心有限公司 | 键合前进行基板表面预处理的方法 |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108214260A (zh) * | 2016-12-22 | 2018-06-29 | 蓝思科技(长沙)有限公司 | 一种超薄蓝宝石晶片的抛光工艺 |
CN108214260B (zh) * | 2016-12-22 | 2020-03-17 | 蓝思科技(长沙)有限公司 | 一种超薄蓝宝石晶片的抛光工艺 |
CN106878912A (zh) * | 2017-03-03 | 2017-06-20 | 瑞声科技(新加坡)有限公司 | 电容式麦克风半成品的氧化层粗糙面平坦化的方法 |
CN107052984A (zh) * | 2017-06-14 | 2017-08-18 | 北京半导体专用设备研究所(中国电子科技集团公司第四十五研究所) | 化学机械平坦化工艺中晶圆边缘区域平整度优化方法 |
CN107378747A (zh) * | 2017-07-11 | 2017-11-24 | 天津华海清科机电科技有限公司 | 用于mems器件的化学机械抛光工艺 |
CN107378747B (zh) * | 2017-07-11 | 2019-04-02 | 天津华海清科机电科技有限公司 | 用于mems器件的化学机械抛光工艺 |
CN109585374A (zh) * | 2017-09-28 | 2019-04-05 | 台湾积体电路制造股份有限公司 | 半导体装置结构的形成方法 |
US12009222B2 (en) | 2017-09-28 | 2024-06-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for forming semiconductor device structure |
CN108747606A (zh) * | 2018-06-16 | 2018-11-06 | 佛山市同鑫智能装备科技有限公司 | 一种不锈钢管加工工艺抛光方法 |
Also Published As
Publication number | Publication date |
---|---|
CN106115612B (zh) | 2017-11-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN106115612A (zh) | 一种晶圆平坦化方法 | |
KR102289577B1 (ko) | 혼합된 연마제 연마 조성물 | |
EP0366027B1 (en) | Wafer flood polishing | |
JP2018513229A (ja) | カチオン性ポリマー添加剤を含む研磨組成物 | |
KR101356287B1 (ko) | 금속 제거 속도 조절을 위한 할라이드 음이온 | |
CA2532114A1 (en) | Abrasive particles for chemical mechanical polishing | |
KR100578596B1 (ko) | 화학기계적 연마용 슬러리 조성물, 이를 이용한반도체소자의 표면 평탄화 방법 및 슬러리 조성물의선택비 제어방법 | |
WO2011152966A2 (en) | Chemical planarization of copper wafer polishing | |
CN104802068B (zh) | 化学机械抛光方法 | |
KR101672809B1 (ko) | 실리콘 옥사이드 제거 증강에 적절한 연마 조성물을 사용한 기판의 화학 기계적 연마방법 | |
US7696095B2 (en) | Auto-stopping slurries for chemical-mechanical polishing of topographic dielectric silicon dioxide | |
US10974366B2 (en) | Conditioning wheel for polishing pads | |
KR101628878B1 (ko) | Cmp용 슬러리 조성물 및 이를 이용한 연마방법 | |
CN103943491B (zh) | 在转接板工艺中采用cmp对基板表面进行平坦化的方法 | |
US6391779B1 (en) | Planarization process | |
KR102410159B1 (ko) | 반도체 기판의 연마 방법 | |
CN100526017C (zh) | 化学机械研磨装置及其研磨垫的调节方法 | |
KR101248657B1 (ko) | 반도체 웨이퍼의 폴리싱 가공 방법 | |
CN103943557B (zh) | 利用cmp对重布线层中聚合物介质层表面进行平坦化的方法 | |
CN102464947A (zh) | 一种化学机械抛光液 | |
KR102082922B1 (ko) | 실리콘산화막 연마용 슬러리 조성물 및 그를 이용한 연마방법 | |
KR102677827B1 (ko) | 양면연마방법 | |
CN201960451U (zh) | 一种化学机械研磨测试设备 | |
JP2005260185A (ja) | 研磨パッド | |
TW202319177A (zh) | 用於後段應用的瓶中墊及單壓板化學機械平坦化方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20200813 Address after: 101, 2 / F, building 2, No. 1, third Taihe street, Beijing Economic and Technological Development Zone, Daxing District, Beijing 100176 Patentee after: Beijing ShuoKe precision electronic equipment Co.,Ltd. Address before: 100176, No. 1, Tai Street, Beijing economic and Technological Development Zone, Daxing District, Beijing Patentee before: THE 45TH Research Institute OF CETC |
|
CP03 | Change of name, title or address | ||
CP03 | Change of name, title or address |
Address after: 100176 101, floor 2, building 2, No. 1, Taihe Third Street, economic and Technological Development Zone, Daxing District, Beijing Patentee after: Beijing Jingyi Precision Technology Co.,Ltd. Address before: 100176 Room 101, floor 2, building 2, No. 1, Taihe 3rd Street, Beijing Economic and Technological Development Zone, Daxing District, Beijing Patentee before: Beijing ShuoKe precision electronic equipment Co.,Ltd. |