CN106104767B - The processing method of semiconductor wafer processing adhesive tape and semiconductor wafer - Google Patents
The processing method of semiconductor wafer processing adhesive tape and semiconductor wafer Download PDFInfo
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- CN106104767B CN106104767B CN201580015094.2A CN201580015094A CN106104767B CN 106104767 B CN106104767 B CN 106104767B CN 201580015094 A CN201580015094 A CN 201580015094A CN 106104767 B CN106104767 B CN 106104767B
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- semiconductor wafer
- adhesive tape
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- wafer processing
- adhesive
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J201/00—Adhesives based on unspecified macromolecular compounds
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
- C09J7/38—Pressure-sensitive adhesives [PSA]
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
- C09J7/38—Pressure-sensitive adhesives [PSA]
- C09J7/381—Pressure-sensitive adhesives [PSA] based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
- C09J7/385—Acrylic polymers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
- C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
Abstract
The present invention relates to the processing method of semiconductor wafer processing adhesive tape and semiconductor wafer, semiconductor wafer processing conforms to surface with adhesive tape (10), and there is height to be used for the process being ground to the back side of the semiconductor wafer for more than 80 μm of concavo-convex semiconductor wafer, wherein, there is adhesive phase (3) on base material film (1), the thickness of the adhesive phase (3) is the 25%~90% of the height of concave convex of the semiconductor wafer surface, and the thickness of described adhesive layer is less than the 25% of the thickness of semiconductor wafer processing adhesive tape (10) entirety.
Description
Technical field
The present invention relates to the processing method of a kind of semiconductor wafer processing adhesive tape and semiconductor wafer, the semiconductor wafer
Processing of the processing adhesive tape when manufacturing silicon wafer when semiconductor device for semiconductor wafer, and for semiconductor wafer
Grinding back surface is carried out Deng carrying out surface protection or fixing semiconductor wafer etc..
More specifically, the invention particularly relates to the processing side of following semiconductor wafer processing adhesive tapes and semiconductor wafer
Method：By the back of the body from the step of semiconductor wafer surface of the projections such as the electrode on surface with more than 10 μm carries out adhesive tape gluing
Face grinding process, will not occur the residue glue from semiconductor wafer surface to electrode, electrode come off etc. and can be by semiconductor die
Piece etc. is peeled off.
Background technology
The process of semiconductor chip and installation untill electronic equipment is processed into for example by following to by semiconductor wafer etc.
Process form：Semiconductor wafer surface Protection glue band is attached to the process of the patterned surfaces of semiconductor wafer；To semiconductor
The process that the back side of chip is ground and made thinner；Semiconductor after being ground and making thinner in above-mentioned operation
Chip is installed to the process of dicing tape；The process that above-mentioned semiconductor wafer processing adhesive tape is peeled off from semiconductor wafer；It is logical
The process crossed cutting and split semiconductor wafer；The chip that semiconductor chip after segmentation is engaged in lead frame welds (die
Bonding) process；And after above-mentioned steps, semiconductor chip is sealed using resin in order to carry out outer protection
Molding process etc..
Semiconductor wafer processing is greatly classified into two kinds with adhesive tape.That is, radioactive ray irradiation after bonding force significantly reduce and
The radiation-curing type being easily peeled off；And bonding force is unchanged, bonding force in chip back surface grinding and when peeling off
The pressure sensitive that will not change by radioactive ray.
As these semiconductor wafer processing adhesive tapes, it is proposed that polyolefin-based in vinyl-vinyl acetate copolymer etc.
The adhesive tape using (methyl) acrylate copolymer as the adhesive phase of main component is provided with material film (for example, referring to patent text
Offer 1).
In addition, in the case where semiconductor wafer surface has the electrode that height is more than 50 μm, sometimes while being heated to
40 DEG C~70 DEG C or so while into being about to process of the processing adhesive tape gluing to conductor chip.In addition, similarly have when peeling off
When in order to make stripping easily and heated while being peeled off.
Due in the pattern of semiconductor wafer surface there are various electronic circuits or electrode, protect their polyimides
When protective film and the groove of scraper incision when semiconductor wafer monolithic to be turned to the cutting action of chip, rule, thus partly
Conductor wafer surface is simultaneously unsmooth, difference of height, bumps there are several μm~tens μm.Herein, will be to back surface of semiconductor wafer
The side for carrying out grinding and being picked up and be attached by chip surface electrode after the chip cutting after making thinner
Formula is known as flip-chip bond.In the juncture, the bumps of electrode portion are very big, have 10 μm~300 μm or so of height
Degree.
This difference of height is of all kinds because having the species of semiconductor wafer or device, but expects brilliant by laminated semiconductor
Piece processing adhesive tape and it is closely sealed with the difference of height of semiconductor wafer surface, gap is filled.But in semiconductor wafer
It is right especially in the case of electrode height is very high or in the case of adhesive elasticity modulus height in the case that difference of height is big
The tracing ability deficiency of semiconductor wafer surface.Grinding water is penetrated into semiconductor wafer when therefore causing to produce overleaf grinding process
With the phenomenon for being referred to as leaking (seepage) in the gap of semiconductor wafer processing adhesive tape.In addition, with electrode with
Cartridge chip is connected as in the semiconductor wafer of target, can be with especially in the case where that can not utilize adhesive tape that electrode is completely covered
Overleaf the position of bubble remaining ruptures for starting point during grinding, or work in-process bubble coalescence can occur half
Conductor center wafer portion and make the thinning phenomenon for being referred to as pitting (ヘ ソ) of the thickness of the silicon at the position.Further, since each
Electrode portion semiconductor wafer thickness is local different, thus is possible to that the bumps for being referred to as scrobicula (dimple) can be produced.
In this way, because occur leak make semiconductor wafer processing adhesive tape from semiconductor wafer peel off, and using the position as
Starting point cracks in semiconductor wafer and causes breakage, or pollution or the glue of semiconductor wafer surface are produced because of water leaking-in
Attachment, so as to cause yield rate significantly to deteriorate.
Generation for leakage, it is known to using make adhesive phase thickening or reduce adhesive phase elasticity modulus side
Method improves and the method for the adaptation of semiconductor wafer surface (for example, referring to patent document 2).Alternatively, it is also possible to by carrying
High adhesion expects same effect.
But in the above-mentioned methods, semiconductor wafer pattern surface electrode height greatly to more than 10 μm of situation
Under can not make its completely it is closely sealed, so that above-mentioned leakage can not be solved the problems, such as.In addition, in adhesive and semiconductor wafer pattern table
Between the electrode of face there are gap in the case of, have following problem：It is aerobic due to being mingled with gap, thus when ultraviolet irradiates
The curing based on oxygen can be produced to suppress, so that the part that adhesive easily occurs residues in being referred to as semiconductor wafer surface
Phenomenon of residue glue etc..In the case where residue glue occurs, the lead welding in subsequent handling may be become or drawn in being electrically connected
The reason for playing failure.
In addition, the filming of semiconductor wafer promotes in recent years, particularly in semiconductor memory purposes, make semiconductor
The film grinding that the thickness of chip is as thin as less than 100 μm is universal.Device wafer is ground and filming to spy by the back side
After determining thickness, by chip in cutting action, utilize resin close after wiring by multiple chip laminations and in substrate, chip chamber
Seal and become product.
On the other hand, as bonding agent, the resin of paste was coated on back surface of semiconductor wafer in the past, but in order to realize core
The filming of piece, small chip and simplify process, will be laminated with advance on base material adhesive and bonding agent (chip welding
Adhesive sheet) cutting die bond piece conform to back surface of semiconductor wafer (grinding surface) and in cutting action with semiconductor wafer in the lump
The step of cut-out, tends to universal (for example, referring to patent document 3).In the method, since bonding agent in uniform thickness being cut off
Into the size identical with chip, because without processes such as bonding agent coatings, further, since can use and existing dicing tape
Identical device, thus workability is good.
Especially in the case of the semiconductor wafer having highly for more than 10 μm of electrode to electrically connect as purpose,
The polyimide coating layer being applied as insulating layer is very thick, and polyimide resin layer be heating and curing after remnants should
Power is also big, therefore after semiconductor wafer is thinning, warpage is big, and the stress of warpage is also strong.
Herein, it is to be fitted with semiconductor wafer processing adhesive tape in semiconductor wafer surface when cutting the fitting of die bond piece
In the case of be directly adsorbed in the state of scratch diskette (chuck table), semiconductor wafer is added after die bond piece is cut in fitting
Work is peeled off with adhesive tape.In order to make the cutting die bond piece and semiconductor wafer closely sealed, need to heat in fitting, sometimes in recent years
Ask the heating under higher temperature (~80 DEG C).Therefore, the softening point in the semiconductor wafer processing base material film layer at the adhesive tape back side,
In the case of low-melting, melt bonded risk can be occurred on scratch diskette by existing.
Prior art literature
Patent document
Patent document 1：Japanese Unexamined Patent Publication 2000-8010 publications
Patent document 2：Japanese Unexamined Patent Publication 2002-53819 publications
Patent document 3：Japanese Unexamined Patent Publication 2007-53325 publications
The content of the invention
The subject that the invention solves
The problem of the present invention is to solve the above problems, there is provided a kind of semiconductor wafer processing adhesive tape, the semiconductor die
Piece processing adhesive tape can reduce the processing by semiconductor wafer, more specifically the back side grinding process for silicon wafer etc.,
The scrobicula produced after adhesive tape stripping process in back surface of semiconductor wafer or surface contamination (mainly causing because of leakage), with partly leading
The excellent adhesion of the higher semiconductor wafer of the height of concave convex of body wafer surface, can carry out wafer film grinding.
Solutions to solve the problem
The present inventor has made intensive studies the above subject, it turns out that, the glue of adhesive layer is provided with base material film
In band, the relation of the height of concave convex of semiconductor wafer surface and the thickness of adhesive phase, the retentivity to the external stress of adhesive tape
It is critically important, and further studied, it is thus found that leakage when can significantly reduce back surface of semiconductor wafer grinding
Occur, especially in the case where film is ground, scrobicula when can significantly reduce back side grinding occurs and semiconductor wafer is broken
Split.The present invention is completed based on the opinion.
That is, it has been achieved through the following technical solutions the above subject.
(1) a kind of semiconductor wafer processing adhesive tape, the semiconductor wafer processing adhesive tape gluing to surface have height
The process for being used to be ground the back side of the semiconductor wafer for more than 80 μm of concavo-convex semiconductor wafers,
The semiconductor wafer processing adhesive tape is characterized in that,
There is adhesive phase on base material film, the thickness of the adhesive phase is the height of concave convex of above-mentioned semiconductor wafer surface
25%~90%, also,
The thickness of above-mentioned adhesive phase is less than the 25% of the thickness of above-mentioned semiconductor wafer processing adhesive tape entirety.
(2) the semiconductor wafer processing adhesive tape as described in (1), it is characterised in that on adding to above-mentioned semiconductor wafer
The thickness direction of work adhesive tape assigns stress slip during compression stress, and measure applies the displacement during compression stress of 50N,
Reach the ratio between stress value when the stress value after 50N 180 seconds reaches 50N relative to compression stress by compression stress to calculate,
The stress slip is more than 40%.
(3) the semiconductor wafer processing adhesive tape as described in (1) or (2), it is characterised in that above-mentioned semiconductor wafer surface
Bumps be electrode, in the semiconductor wafer processing adhesive tape before semiconductor wafer is bonded and semiconductor in addition to surface electrode
The aggregate value of wafer thickness is set to A, semiconductor wafer is bonded after semiconductor wafer processing adhesive tape and semiconductor wafer
In the case that the gross thickness of laminate is set to B, A/B is more than 0.95.
(4) the semiconductor wafer processing adhesive tape as any one of (1)~(3), it is characterised in that above-mentioned base material film
It is made of ultraviolet curing resin.
(5) a kind of processing method of semiconductor wafer, the processing method of the semiconductor wafer, which has used, conforms to surface tool
There is semiconductor wafer processing adhesive tape of the height for more than 80 μm of concavo-convex semiconductor wafer,
The processing method of the semiconductor wafer is characterized in that,
Above-mentioned semiconductor wafer processing adhesive tape has adhesive phase on base material film, and the thickness of the adhesive phase is partly to lead
Less than the 25% of the thickness of body adhesive tape for wafer processing entirety,
The thickness of above-mentioned adhesive phase is the 25%~90% of the height of concave convex of above-mentioned semiconductor wafer surface,
The processing method of the semiconductor wafer is included above-mentioned semiconductor wafer processing adhesive tape gluing to above-mentioned semiconductor
The process of chip.
The effect of invention
The present invention can provide a kind of processing method of semiconductor wafer processing adhesive tape and semiconductor wafer, of the invention
Semiconductor wafer processing adhesive tape the thin semiconductor wafer of thickness processing, more specifically have for surface to electrically connect as
The height of purpose is in the back side grinding process of more than 10 μm, especially more than 80 μm of the silicon wafer of electrode etc., is overleaf ground
It can ensure that the adaptation with semiconductor wafer surface in the stacking of mill (BG) adhesive tape, back surface of semiconductor wafer grinding, and it is right
The retentivity of external stress is excellent, can not produce scrobicula, rupture and implement film grinding processing, in semiconductor wafer afterwards
Processing in adhesive tape stripping process with without problem being peeled off.
The above and other feature and advantage of the present invention can be suitably further clear and definite by following contents referring to the drawings.
Brief description of the drawings
Fig. 1 is to be shown schematically in the fitting of semiconductor wafer pattern surface for a preferred embodiment of the present invention
There is the sectional view of the state of the semiconductor wafer processing adhesive tape of the present invention.
Embodiment
In the following, the present invention will be described in detail.
The semiconductor wafer processing of the present invention has adhesive phase 3 with adhesive tape 10 on base material film 1, preferably in base material film 1
There is anchor layer (anchor layer) 2 between adhesive phase 3.
It should be noted that in Fig. 1, the pattern of the semiconductor wafer on silicon (Si) layer 5 of semiconductor wafer is shown
Layer (distribution, electrode etc.) 4 side are fitted with the state of semiconductor wafer processing adhesive tape.
<Base material film>
In the present invention, base material film be preferably the film that is made of polyolefin-based resins or cure ultraviolet curing resin and
Into film.
As polyolefin-based resins, optimal ethylene/vinyl acetate copolymer (EVA)；High density polyethylene (HDPE) (HDPE), in
Density polyethylene (MDPE), low density polyethylene (LDPE) (LDPE)；Or (methyl) acrylic resin, wherein it is preferred that (methyl) acrylic acid
It is resin.
For ultraviolet curing resin, as the cured functional group using ultraviolet irradiation, such as it can lift
Go out ethylenically unsaturated groups [(methyl) acryloyl group, vinyl etc.], specifically, for example, polyurethane acroleic acid
The double bond of ester system oligomer possessed optical polymerism in the molecule.
In the present invention, the poly- ammonia of ultraviolet curing resin (curing agent) is added preferably into (methyl) acrylic resin
Ester acrylate simultaneously makes it carry out the resin that ultraviolet curing forms.
It should be noted that the basic framework of the curing agent as ultraviolet curing resin, except by polyol
Beyond the urethane acrylate system oligomer that thing, isocyanate compound and acrylate or methacrylate are formed, example
Epoxy acrylate can also be such as enumerated, wherein, preferred urethane acrylate.
It should be noted that the compound represented by preferred the following general formula of urethane acrylate system oligomer (I).
[changing 1]
Logical formula (I)
In logical formula (I), R represents hydrogen atom or methyl, and Q represents the part-structure of polyisocyanates, and P is represented by polyalcohol
Obtained from divalent group.
Herein, the part-structure of polyisocyanates is by the compound with more than 2 isocyanate group and (methyl) third
The structure that the reaction of olefin(e) acid 2- hydroxy methacrylates obtains.
In the present invention, preferably there are 2~10 (methyl) acryloyloxyethoxies in the molecule, more preferably 2~6
It is a, more preferably 3~5.
Urethane acrylate system oligomer used for example synthesizes chemistry by Japan in these ultraviolet curing resins
Sold as purple light series.
The resin that (methyl) acrylic resin preferably uses in adhesive described later.
On the blend amount of the urethane acrylate of ultraviolet curing resin (curing agent), relative to (methyl) propylene
100 mass parts of acid system resin, are preferably the mass parts of 10 mass parts~150, the mass parts of more preferably 30 mass parts~120, into one
Step is preferably the mass parts of 50 mass parts~100.
Base material film can protect back side grinding or grinding back surface of the semiconductor wafer from carrying out semiconductor wafer to add
The influence of the impact in man-hour, and the warpage of semiconductor wafer can be suppressed.The especially back of the body of the base material film for semiconductor wafer
Water cleaning when face grinding or grinding back surface are processed etc. has water resistance, and for the polyimides of semiconductor die on piece
Warping stress Deng the semiconductor wafer caused by the residual stress in dielectric film has corrective force.
The thickness of base material film is not particularly limited, and is preferably 100 μm~350 μm, more preferably 250 μm~300 μm.
The manufacture method of base material film is not particularly limited.In the case of polyolefin-based resins, injection can be used, squeezed
Go out, inflation, the existing method such as biaxial stretch-formed.In the case where using ultraviolet curing resin as film, can use logical
Cross T moulds etc. raw material is formed as into film after, be crosslinked by on-line ultraviolet (UV) irradiation apparatus, the method for membranization etc..
<Adhesive phase>
In the present invention, at least there is 1 layer of adhesive phase on base material film, can not substantially ensure that adhesive phase and base material film
Adaptation in the case of, can also be applied to Pressuresensitive Adhesive as anchor layer on base material film, can also be in base material film
Anchor layer is set between adhesive phase.
The thickness of adhesive phase can suitably be set, relative to the height of concave convex of semiconductor wafer surface for 25%~
90%th, it is preferably 30%~90%, more preferably 50 μm~400 μm, particularly preferably 250 μm~400 μm.
In addition, in the present invention, the thickness of adhesive phase is the thickness of semiconductor wafer processing adhesive tape entirety
Less than 25%, it is preferably less than 20%.It should be noted that the lower limit of the thickness of adhesive phase is not particularly limited, it is preferably
More than 5%.
In addition, in the case that the thickness direction of the semiconductor wafer processing adhesive tape into the present invention applies compression stress
Stress slip is preferably more than 40%.It should be noted that on stress slip, it is described in detail below.
The adhesive or base material film of the present invention is preferably ultraviolet hardening, is more preferably ultraviolet hardening.
As long as this adhesive is just not particularly limited for radiation-curing type, existing adhesive can be used, preferably
For (methyl) acrylic resin (hereinafter also referred to as acrylic resin).
(adhesive or adhesive phase)
The resin of the adhesive phase formed as adhesive or by adhesive, is preferably (methyl) acrylic acid series as described above
Resin, this acrylic resin can enumerate the homopolymer using (methyl) acrylate as constituent or have (methyl)
Copolymer of the acrylate as constituent.As form contain acrylate as the polymer of constituent monomer into
Point, for example, with methyl, ethyl, n-propyl, isopropyl, normal-butyl, the tert-butyl group, isobutyl group, amyl group, isopentyl,
Hexyl, heptyl, cyclohexyl, 2- ethylhexyls, octyl group, iso-octyl, nonyl, isononyl, decyl, isodecyl, undecyl, bay
The carbon numbers such as base, tridecyl, myristyl, stearyl, octadecyl and dodecyl is less than 30, preferred carbon number
For the alkyl acrylate or alkyl methacrylate of the alkyl of 4~18 straight or branched.These (methyl) alkyl acrylates
Base ester can be used alone, and can also share two or more.
As the copolymer composition with (methyl) acrylate, following monomer component can be included.For example,：Third
Olefin(e) acid, methacrylic acid, (methyl) carboxyethyl acrylates, (methyl) acrylic acid carboxyl pentyl ester, itaconic acid, maleic acid, rich horse
The carboxylic monomer such as acid and crotonic acid；The anhydride monomers such as maleic anhydride or itaconic anhydride；(methyl) acrylic acid 2- hydroxy methacrylates,
(methyl) acrylic acid 2- hydroxy propyl esters, (methyl) acrylic acid 4- hydroxybutyls, the own ester of (methyl) acrylic acid 6- hydroxyls, (methyl) third
Olefin(e) acid 8- hydroxyls monooctyl ester, (methyl) acrylic acid 10- hydroxyls last of the ten Heavenly stems ester, (methyl) acrylic acid 12- hydroxylaurics ester and (methyl) propylene
The monomer of the hydroxyls such as sour (4- Hydroxymethyl-cyclo-hexyls) methyl esters；Styrene sulfonic acid, allyl sulphonic acid, 2- (methyl) acryloyl
Amine -2- methyl propane sulfonic acids, (methyl) acrylamide propane sulfonic acid, (methyl) acrylic acid sulphur propyl ester and (methyl) acryloxy naphthalene sulphur
Acid etc. contains sulfonic monomer；The monomer of the phosphorous acidic groups such as acryloyl group phosphoric acid 2- hydroxy methacrylates；(methyl) acrylamide, (first
Base) acrylic acid N- hydroxymethyls acid amides, (methyl) acrylic acid alkylaminoalkyl ester (such as dimethylamine second
Ester, t-butylaminoethyl methacrylate etc.), n-vinyl pyrrolidone, acryloyl morpholine, vinyl acetate, benzene second
Alkene, acrylonitrile etc..These monomer components can be used alone, and can also share two or more.
In addition, as (methyl) acrylic resin, following multi-functional monomer can be included as constituent.Example
Hexylene glycol two (methyl) acrylate, (poly-) ethylene glycol two (methyl) acrylate, two (first of (poly-) propane diols can such as be enumerated
Base) acrylate, neopentyl glycol two (methyl) acrylate, pentaerythrite two (methyl) acrylate, trimethylolpropane tris
(methyl) acrylate, tetramethylol methane four (methyl) acrylate, pentaerythrite three (methyl) acrylate, pentaerythrite
Four (methyl) acrylate, dipentaerythritol monohydroxy five (methyl) acrylate, dipentaerythritol six (methyl) acrylate,
Epoxy (methyl) acrylate, polyester (methyl) acrylate and carbamate (methyl) acrylate etc..These are multifunctional
Property monomer can be used alone, and can also share two or more.
In (methyl) acrylate, ethyl acrylate, butyl acrylate, acrylic acid 2- ethyl hexyls can be preferably enumerated
Ester, glycidyl acrylate, acrylic acid 2- hydroxy methacrylates etc. and the copolymer for being composed these.Furthermore it is possible to make
The thing that the acrylic acid series polymeric compounds such as the material of methacrylate and curing agent form is replaced with by aforesaid propylene acid esters
Matter.
(Photoepolymerizationinitiater initiater)
By making to contain photopolymerizable compound and Photoepolymerizationinitiater initiater in adhesive phase, and put by irradiating ultraviolet etc.
Ray and cured, the bonding force of adhesive can be reduced.
As Photoepolymerizationinitiater initiater, Japanese Unexamined Patent Publication 2007-146104 publications or Japanese Unexamined Patent Publication 2004- can be used
Photoepolymerizationinitiater initiater described in No. 186429 publications.Can be by cumene asioinether, isobutyl benzoin ether, hexichol first
Ketone, Michler's keton, clopenthixal ketone, benzil methyl ketal, Alpha-hydroxy cyclohexyl-phenyl ketone, 2- hyd roxymethyl phenyl propane etc. close
With.
The content of photopolymerizable compound is preferably the matter of 50 mass parts~150 relative to above-mentioned 100 mass parts of resin component
Measure part, the content of Photoepolymerizationinitiater initiater is preferably the mass parts of 1 mass parts~5 relative to above-mentioned 100 mass parts of resin component.
(curing agent)
As curing agent (also referred to as crosslinking agent), consolidating described in Japanese Unexamined Patent Publication 2007-146104 publications can be used
Agent.For example,：Double (N, the N- diglycidyl amino methyl) hexamethylenes of 1,3-, 1,3- are double, and (N, N- bis- shrinks sweet
Oil base amino methyl) toluene, 1,3- double (N, N- diglycidyl amino methyl) benzene, N, N, N, N '-four glycidyl group-
Benzene dimethylamine etc. has the epoxide of more than 2 epoxy groups in the molecule；2,4 toluene diisocyanate, 2,6- toluene two
Isocyanates, 1,3- xylylene diisocyanates, 1,4- xylylene diisocyanates, the isocyanide of diphenyl methane -4,4 '-two
Acid esters etc. has the isocyanates based compound of more than 2 isocyanate group in the molecule；- three-β of tetra methylol-azacyclo- third
Base propionic ester ,-three-β of trihydroxy methyl-aziridinyl propionic ester ,-three-β of trimethylolpropane-aziridinyl propionic ester, three
- three-β of hydroxymethyl-propane-(2- methyl-aziridinyls propane) propionic ester etc. has the azepine of more than 2 aziridinyls in the molecule
Cyclopropane based compound etc..As expected bonding force adjusts the content of curing agent, relative to resin as described above
100 mass parts of component, are preferably the mass parts of 0.01 mass parts~10, the mass parts of more preferably 0.1 mass parts~5.
(photopolymerizable compound)
As photopolymerizable compound, such as widely use such as Japanese Unexamined Patent Application 60-196956 publications and Japanese Unexamined Patent Publication
Can irradiated by light and the intramolecular of three-dimensional nettedization with least two with glazing disclosed in clear 60-223139 publications
The low molecular weight compound of polymerism carbon-to-carbon double bond (ethylenic double bond).
Specifically, using trimethylolpropane trimethacrylate, pentaerythritol triacrylate, pentaerythrite tetrapropylene
Acid esters, dipentaerythritol monohydroxypentaacryande, dipentaerythritol acrylate or 1,4 butanediol diacrylate,
1,6 hexanediol diacrylate, polyethyleneglycol diacrylate, commercially available oligoester acrylate etc..
(polymer with polymerizable group)
In the present invention, as the adhesive of adhesive phase, can use has optical polymerism carbon-to-carbon double bond in the polymer
The polymer of (ethylenic double bond), the optical polymerism formed using the resin combination containing Photoepolymerizationinitiater initiater and curing agent are glued
Mixture.As the polymer in the polymer with carbon-to-carbon double bond, for example, there is (methyl) acryloyl in side chain
Base, vinyl, the material of pi-allyl, are preferably following (methyl) acrylic acid series polymeric compounds, should (methyl) acrylic polymeric
Thing be using any means make it is one kind or two or more side chain have carbon number be 4~12, further preferred carbon number
The monomer such as (methyl) acrylate of alkyl or copolymerizable modified monomer for 8 carry out homopolymerization or copolymerization forms.
The radiation-curing type adhesive phase that is thusly-formed can by irradiating radioactive ray, preferably ultraviolet makes bonding force
It is greatly reduced compared with initial value, so as to easily peel off adhesive tape from bonded body.
In the present invention, thickness partly the leading relative to the electrode height with more than 80 μm of radiation-curing type adhesive phase
Body chip is preferably 30%~90%, and more preferably 40%~80%.
(anchor layer)
In order to form adhesive phase on base material film, at least one kind of adhesive is coated with or is transferred in base using any means
At least single side of material film, in of the invention, can also set anchor layer (also referred to as primary coat between base material film and adhesive phase
Layer) etc. intermediate layer.In the present invention, anchor layer is preferably provided with.
As the resin for forming anchor layer, cured with isocyanates system adhesive or curable epoxide system adhesive can be enumerated
Deng, wherein, it is preferably cured with isocyanates system adhesive.
The thickness of anchor layer is preferably 0.5 μm~10 μm, more preferably 3 μm~5 μm.
In addition, the synthetic resin film that can will typically serve as distance piece as needed is attached to adhesive phase side, to supply
Radiation-curing type adhesive phase is protected during before actual use.
Distance piece uses polyethylene terephthalate film through silicone demoulding processing etc..Alternatively, it is also possible to according to need
To use polypropylene screen for not carrying out silicone demoulding processing etc..
<Deformed when semiconductor wafer processing is with the compression of adhesive tape>
The present invention semiconductor wafer processing adhesive tape 25 DEG C apply 50N stress after 3 minutes after stress subtract
Few rate is preferably more than 30%, more preferably more than 35%, more preferably more than 40%.The upper limit of stress slip does not have
It is particularly limited to, but actual is less than 80%.
It is adjusted in order to which stress is reduced in preferred scope as described above, specifically, can be by adjusting adhesive
The elastic modulus G ' of layer or adjust the thickness of adhesive phase, the thickness of base material film is adjusted.
Stress slip can proceed as follows survey during the compression of the thickness direction of semiconductor wafer processing adhesive tape
It is fixed.
Size by semiconductor wafer processing adhesive tape cutting for 5 200mm × 200mm or so, and lamination is in base material film
Between adhesive phase, the material which forms is cut to 25mm × 55mm, in this, as test film.By the test film
Adhesive phase upward, and is positioned over the parallel plate fixtures for the compression test for being arranged on cupping machine, by bend test (JIS
K7171 pressure head) applies compression stress in 1.0mm/ minutes with 25 DEG C, speed.Stress slip when assigning compression stress can be with
The ratio between stress value when reaching relative to compression stress 50N by the stress value behind reaching 50N from compression stress 180 seconds is asked
Go out.
The relation ＞ of ＜ semiconductor wafer processing adhesive tapes and semiconductor wafer thickness
In the present invention, in the semiconductor wafer processing adhesive tape before semiconductor wafer is bonded and half in addition to surface electrode
The aggregate value of conductor wafer thickness is set to A, semiconductor wafer is bonded after semiconductor wafer processing adhesive tape and semiconductor die
In the case that the gross thickness of the laminate of piece is set to B, A/B is more than 0.95, is particularly preferably 0.99.After the value can be to fitting
The protuberance of adhesive tape evaluated, if the generation of protuberance is more, the value of A/B reduces.
With the value close to 1 and swell generation can also disappear.
The purposes ＞ of ＜ semiconductor wafer processing adhesive tapes
By by the present invention semiconductor wafer processing with adhesive tape be used for semiconductor wafer surface with more than 80 μm dash forward
The semiconductor wafer risen, can effectively play the effect of the present invention.The concavo-convex height of semiconductor wafer surface can be preferred
Ground is applicable in more than 100 μm, can also preferably be applicable in 120 μm.It should be noted that the concavo-convex height of semiconductor wafer surface
The actual upper limit applicatory is less than 300 μm.
The semiconductor wafer processing of the present invention can be used for the protection when carrying out grinding back surface to semiconductor wafer with adhesive tape
The purposes of patterned surfaces, and with also excellent to electrically engage the wafer surface adaptation of the electrode for target, can suppress
Dust during grinding penetrates into or rupture, the generation of scrobicula, therefore is suitable for grinding.
The processing method ＞ of ＜ semiconductor wafers
The present invention semiconductor wafer processing method have by the present invention semiconductor wafer processing with adhesive tape gluing extremely
Surface has process of the height for more than 80 μm of concavo-convex semiconductor wafer.
Semiconductor wafer processing thickness of adhesive phase possessed by adhesive tape is the height of concave convex of semiconductor wafer surface
30%~90%.
Semiconductor wafer processing adhesive tape of the invention used in semiconductor wafer processing method is applicable above
Material in the preferred scope of the semiconductor wafer processing adhesive tape of middle explanation.
Embodiment
In the following, the present invention is described in more detail based on embodiment, but the present invention is not limited to these embodiments.
<Embodiment 1>
Prepare by 2-EHA (78mol%), acrylic acid 2- hydroxy methacrylates (21mol%), methacrylic acid
The acrylic acid series copolymer that (1mol%) is formed, afterwards, makes to be obtained by acrylic acid 2- hydroxy methacrylates as polymer lateral chain
Hydroxyl in repetitive unit is reacted with isocyanic acid 2- (methacryloxy) ethyl ester, obtains being imported with work on the polymer lateral chain
The acrylic acid series copolymer of the methylacryloyl to play a role for the carbon-to-carbon double bond of radiation-curable.Obtained
In acrylic acid series copolymer, relative to 100 mass parts of solid constituent of the copolymer, the ultraviolet hardening of 3 function of mixture
Urethane acrylate system oligomer (manufacture of synthesis chemical company of Japan, the UV-7550B of (trade name) purple light series) 75 mass
Part, Photoepolymerizationinitiater initiater ((trade name), the manufacture of BASF JAPAN companies, Irgacure184) 5.0 mass parts, obtain bonding group
Compound.
On 25 μm of polyethylene terephthalates (PET) distance piece coating using (methyl) acrylic copolymer as
Following adhesive a of main component, its drying are made at 120 DEG C 2 minutes and set the adhesive phase that thickness is 40 μm.Purple will be passed through
The base material film that outside line makes above-mentioned adhesive composition cure 270 μm of the thickness formed is conformed in the bonding agent aspect, is thus made
Make semiconductor wafer processing adhesive tape.
It should be noted that adhesive a is obtained in the following way：Preparing by butyl acrylate (70mol%), propylene
(methyl) acrylic acid series for the weight average molecular weight 800,000 that sour 2- hydroxy methacrylates (29mol%), methacrylic acid (1mol%) are formed
After copolymer, make hydroxyl and isocyanic acid 2- in the repetitive unit obtained by acrylic acid 2- hydroxy methacrylates as polymer lateral chain
(methacryloxy) ethyl ester reacts, and obtains being imported with the carbon-to-carbon double bond as radiation-curable on the polymer lateral chain
And the acrylic acid series copolymer of the methylacryloyl to play a role.Relative to obtained 100 mass of acrylic acid series copolymer
Part, mixture Coronate L (Nippon Polyurethane Industry Co., Ltd.'s manufacture) 2.0 mass parts, Japan's Ciba-Geigy company systems
Make：Irgacure 184 (manufacture of BASF JAPAN Co., Ltd.) 5.0 mass parts.
<Embodiment 2>
Above-mentioned adhesive a is coated with 25 μm of polyethylene terephthalate distance piece, it is dried 2 at 120 DEG C
Minute and to set thickness be 60 μm of adhesive phase, and it is 270 μm by above-mentioned polyurethane to be bonded to thickness with adhesive phase face paste
On the base material film that acrylate is formed, semiconductor wafer processing adhesive tape is thus made.
3 ＞ of ＜ embodiments
Above-mentioned adhesive a is coated with 25 μm of polyethylene terephthalate distance piece, it is dried 2 at 120 DEG C
Minute and to set thickness be 60 μm of adhesive phase, and it is 100 μm by above-mentioned polyurethane to be bonded to thickness with adhesive phase face paste
On the base material film that acrylate is formed, semiconductor wafer processing adhesive tape is thus made.
<Embodiment 4>
Above-mentioned adhesive a is coated with 25 μm of polyethylene terephthalate distance piece, it is dried 2 at 120 DEG C
Minute and to set thickness be 60 μm of adhesive phase, and it is 200 μm by polyurethane propylene to be bonded to thickness with adhesive phase face paste
On the base material film that acid esters is formed, semiconductor wafer processing adhesive tape is thus made.
<Embodiment 5>
Above-mentioned adhesive a is coated with 25 μm of polyethylene terephthalate distance piece, it is dried 2 at 120 DEG C
Minute and to set thickness be 60 μm of adhesive phase, and it is 350 μm by above-mentioned polyurethane to be bonded to thickness with adhesive phase face paste
On the base material film that acrylate is formed, semiconductor wafer processing adhesive tape is thus made.
<Comparative example 1>
Preparing by 69 mass parts of 2-EHA, 29 mass parts of acrylic acid 2- hydroxy methacrylates and methacrylic acid
After the acrylic acid series copolymer that 2 mass parts are formed, make the repetition obtained by acrylic acid 2- hydroxy methacrylates as polymer lateral chain
Hydroxyl in unit is reacted with isocyanic acid 2- (methacryloxy) ethyl ester, is obtained being imported with the polymer lateral chain as putting
The carbon-to-carbon double bond of ray-curable and the acrylic acid series copolymer of methylacryloyl to play a role.In obtained propylene
In sour based copolymer, relative to 100 mass parts of solid constituent of the copolymer, isocyanates system of mixture adduct system crosslinking agent
Coronate L (trade name, Nippon Polyurethane Industry Co., Ltd.'s manufacture) 2.5 mass parts, and in order to be adjusted to be easy to be coated with
Viscosity and using ethyl acetate carry out viscosity adjustment, obtain adhesive composition.
Above-mentioned adhesive composition is coated with 25 μm of polyethylene terephthalate distance piece and makes its drying, is led to
Cross and conform on vinyl-vinyl acetate copolymer (EVA) film that thickness is 165 μm and lamination, set on the lamination base material film
Put thickness and make semiconductor wafer processing adhesive tape for 40 μm of adhesive phase.
<Comparative example 2>
Above-mentioned adhesive a is coated with 25 μm of polyethylene terephthalate distance piece, it is dried 2 at 120 DEG C
Minute and to set thickness be 60 μm of adhesive phase, and conform to that thickness is 165 μm and vinyl acetate content is 10 mass %
Vinyl-vinyl acetate copolymer (EVA) film on, thus make semiconductor wafer processing adhesive tape.
<Comparative example 3>
Preparing by 69 mass parts of 2-EHA, 29 mass parts of acrylic acid 2- hydroxy methacrylates and methacrylic acid
After the acrylic acid series copolymer that 2 mass parts are formed, make the repetition obtained by acrylic acid 2- hydroxy methacrylates as polymer lateral chain
Hydroxyl in unit is reacted with isocyanic acid 2- (methacryloxy) ethyl ester, is obtained being imported with the polymer lateral chain as putting
The carbon-to-carbon double bond of ray-curable and the acrylic acid series copolymer of methylacryloyl to play a role.In obtained propylene
In sour based copolymer, relative to 100 mass parts of solid constituent of the copolymer, isocyanates system of mixture adduct system crosslinking agent
Coronate L (trade name, Nippon Polyurethane Industry Co., Ltd.'s manufacture) 2.5 mass parts, and in order to be adjusted to be easy to be coated with
Viscosity and using ethyl acetate carry out viscosity adjustment, obtain adhesive composition.
Above-mentioned adhesive composition is coated with 25 μm of polyethylene terephthalate distance piece and makes its drying, is led to
Cross and conform to Young's modulus as 8.0 × 109Pa (25 DEG C) and polyethylene terephthalate (PET) film that thickness is 100 μm
Lamination on (company's manufacture, (trade name) COSMOSHINE A4100 spin in Japan), setting thickness is on the lamination base material film
40 μm of adhesive phase and make semiconductor wafer processing adhesive tape.
[evaluating characteristics experiment]
For embodiment 1~5, the semiconductor wafer processing adhesive tape of comparative example 1~3, proceed as follows characteristic and comment
Valency is tested.
(i) measure of stress when compressing
It is the big of 5 200mm × 200mm or so by the semiconductor wafer processing adhesive tape cutting of embodiment and comparative example
It is small, and lamination is between base material film and adhesive phase.The material that the lamination forms is cut to 25mm × 55mm, in this, as examination
Test piece.Make the adhesive phase of the test film upward, and be positioned over the parallel-plate folder for the compression test for being arranged on cupping machine
Tool, applies compression stress in 1.0mm/ minutes by the pressure head of bend test (JIS K7171) with 25 DEG C, speed.It will be assigned in stress
The part of preceding pressure head contact sample is set to zero point, and displacement during using the compression stress for applying 50N is as measured value.
Stress slip (being known as stress slip in table) when assigning compression stress from compression stress by reaching 50N
The ratio between stress value when stress value after 180 seconds reaches 50N relative to compression stress calculates.
(semiconductor wafer processing adhesive tape gluing)
On the stickiness of made semiconductor wafer processing adhesive tape, Automatic laminating machine (day east electrician strain formula is used
Commercial firm manufactures DR-8500III) and the pressure at doubling roller both ends is set to 0.25MPa, carry out to 8 inches of (inch) naked silicon wafers
And fitting, the cut-out of the silicon wafer with 120 μm of spherical protrusions (250 μm of convex block spacing).
(ii) the semiconductor wafer fitness test of electrode is carried
Adhesive tape of the height for the silicon wafer of 120 μm of electrode is carried on conforming to, in 25 DEG C of placements from after firm fitting
24 it is small when after, see whether that the adhesive tape protuberance of semiconductor wafer processing adhesive tape occurs, and evaluated according to following benchmark.
Herein, the laminate of semiconductor wafer processing adhesive tape and semiconductor wafer after semiconductor wafer is bonded it is total
Thickness is set to B, the semiconductor wafer processing adhesive tape before semiconductor wafer is bonded and the semiconductor die in addition to surface electrode
The aggregate value of piece thickness is set to A, and adhesive tape protuberance evaluate using the value of A/B at this time, as the value is close to 1,
The generation of protuberance can also disappear.
Metewand
◎：Do not occur to swell (more than A/B=0.99) completely in semiconductor wafer surface
○：(A/B=0.95 is less than 0.99) is swelled in 30% generation that is less than of semiconductor wafer surface
Δ：The 30% of semiconductor wafer surface less than 50% occur protuberance (A/B=0.80 less than
0.95)
×：Protuberance (A/B=is less than 0.80) occurs for more than the 50% of semiconductor wafer surface
It should be noted that the thickness and semiconductor die of measured in advance semiconductor wafer processing adhesive tape are distinguished before fitting
Piece thickness (except convex block portion), and the overall thickness after fitting is measured, calculate the ratio of the thickness of adhesive phase.
(iii) test is carried in device
On the carrying in back surface of semiconductor wafer device after grinding, manufactured using Co., Ltd. DISCO full-automatic
Can grinder DGP8760+ wafer chip mounter DFM2700, be confirmed whether that absorption mistake occurs or carry out to the automatic of chip mounter
Carry.Zero will not be evaluated as there is a situation where absorption mistake, will occur when carrying absorption it is wrong be evaluated as ×.
(iv) film grindability
Be ground to carrying out the back side with height for the silicon wafer of 120 μm of electrode untill thickness is 150 μm, according to
Lower metewand evaluates rupture.
Metewand
◎：Semiconductor wafer crack-free after grinding
○：Crackle at 1 is confirmed in Waffer edge portion
Δ：Crackle at 2~3 is confirmed in Waffer edge portion
×：The crackle more than at 4 is confirmed in Waffer edge portion
In addition, scrobicula (small recess) is evaluated according to following benchmark.
Metewand
○：Chip back surface after grinding is without scrobicula
×：Chip back surface after grinding confirms scrobicula
(v) dust penetrates into the evaluation of (leakage)
Use laminating machine (trade name：DR-8500II, Dong Jing machine Co., Ltd. manufacture), semiconductor wafer is processed and is used
Adhesive tape gluing extremely has groove with formation of the interval of 5mm formed with 50 μm of width, the silicon wafer of 8 inches of the diameter of the groove of 30 μm of depth
Entire surface.Utilize grinder (trade name：DGP8760, Co., Ltd. DISCO are manufactured) semiconductor die of adhesive tape is fitted with to this
Piece carries out back side grinding untill thickness is 50 μm, investigates cutting water from semiconductor wafer processing adhesive tape periphery after grinding
Infiltration of the portion to groove.
The result is evaluated according to following benchmark.
Metewand
○：5 above-mentioned investigation, five infiltrations for not observing cutting water completely is repeated
Δ：5 above-mentioned investigation are repeated, at least observe the infiltration of 1 cutting water
×：5 above-mentioned investigation, 5 infiltrations for observing cutting water is repeated
These results are collected and are shown in table 1 below, 2.
[table 1]
[table 2]
As shown in table 1,2, the thickness of adhesive phase exceedes overall 25% of adhesive tape in comparative example 1~3, as a result with
Ruptured in the grinding semiconductor wafer processing of more than 80 μm of electrode obvious.
In contrast, the thickness of adhesive phase is less than the 25% of adhesive tape entirety in embodiment 1~5, thus show
Good adaptation, grindability.
With reference to embodiments thereof, the present invention is described, but applicants contemplate that, as long as no specifying, then originally
Invention is not limited in any details of explanation, should not violate spirit and scope shown in the appended claims
In the case of carry out wide in range explanation.
This application claims the Japanese Patent Application 2014-061011's for carrying out patent submission in Japan based on March 24th, 2014
Priority, introduces by it with reference to this and using its content as a part for this specification contents.
Symbol description
10 semiconductor wafer processing adhesive tapes
1 base material film
2 anchor layers
3 adhesive phases
The patterned layer (distribution, electrode etc.) of 4 semiconductor wafers
The silicon layer of 5 semiconductor wafers
Claims (5)
1. a kind of semiconductor wafer processing adhesive tape, it is 80 μm that the semiconductor wafer processing adhesive tape gluing to surface, which has height,
More than concavo-convex semiconductor wafer and be used for the process being ground to the back side of the semiconductor wafer,
The semiconductor wafer processing adhesive tape is characterized in that,
There is adhesive phase on the base material film being made of ultraviolet curing resin, the thickness of the adhesive phase is partly led to be described
The 30%~90% of the height of concave convex of body wafer surface, also,
The thickness of described adhesive layer is less than the 25% of the thickness of the semiconductor wafer processing adhesive tape entirety,
On assigning stress slip during compression stress to the thickness direction of the semiconductor wafer processing adhesive tape, measure is applied
Add the displacement during compression stress of 50N, the stress value reaching 50N by compression stress after 180 seconds is reached relative to compression stress
The ratio between stress value during to 50N calculates, which is more than 40%,
Only included on the base material film and adhesive phase and anchor layer, the anchor are only included on adhesive phase, or the base material film
Gu the thickness of layer is 0.5 μm~10 μm.
2. semiconductor wafer processing adhesive tape as claimed in claim 1, it is characterised in that the base material film is to make (methyl) third
Obtained from olefin(e) acid ester system's resin and the oligomer ultraviolet curing of urethane acrylate system.
3. semiconductor wafer processing adhesive tape as claimed in claim 1 or 2, it is characterised in that the thickness of the base material film is
200 μm~350 μm, the adhesive of described adhesive layer is ultraviolet hardening.
4. semiconductor wafer processing adhesive tape as claimed in claim 1 or 2, it is characterised in that the semiconductor wafer surface
Bumps be electrode, in the semiconductor wafer processing adhesive tape before semiconductor wafer is bonded and semiconductor in addition to surface electrode
The aggregate value of wafer thickness is set to A, semiconductor wafer is bonded after semiconductor wafer processing adhesive tape and semiconductor wafer
In the case that the gross thickness of laminate is set to B, A/B is more than 0.95.
5. a kind of processing method of semiconductor wafer, the processing method of the semiconductor wafer, which has used, conforms to surface with height
For the semiconductor wafer processing adhesive tape of more than 80 μm of concavo-convex semiconductor wafers,
The processing method of the semiconductor wafer is characterized in that,
The semiconductor wafer processing has adhesive phase with adhesive tape on the base material film being made of ultraviolet curing resin, should
The thickness of adhesive phase is less than the 25% of the thickness of semiconductor wafer processing adhesive tape entirety,
The thickness of described adhesive layer is the 30%~90% of the height of concave convex of the semiconductor wafer surface,
On assigning stress slip during compression stress to the thickness direction of the semiconductor wafer processing adhesive tape, measure is applied
Add the displacement during compression stress of 50N, the stress value reaching 50N by compression stress after 180 seconds is reached relative to compression stress
The ratio between stress value during to 50N calculates, which is more than 40%,
The processing method of the semiconductor wafer is included the semiconductor wafer processing adhesive tape gluing to the semiconductor wafer
Process,
Only included on the base material film and adhesive phase and anchor layer, the anchor are only included on adhesive phase, or the base material film
Gu the thickness of layer is 0.5 μm~10 μm.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014-061011 | 2014-03-24 | ||
| JP2014061011A JP5697061B1 (en) | 2014-03-24 | 2014-03-24 | Adhesive tape for semiconductor wafer processing and method for processing semiconductor wafer |
| PCT/JP2015/058601 WO2015146856A1 (en) | 2014-03-24 | 2015-03-20 | Adhesive tape for semiconductor wafer processing and method for processing semiconductor wafer |
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| Publication Number | Publication Date |
|---|---|
| CN106104767A CN106104767A (en) | 2016-11-09 |
| CN106104767B true CN106104767B (en) | 2018-05-01 |
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| CN201580015094.2A Active CN106104767B (en) | 2014-03-24 | 2015-03-20 | The processing method of semiconductor wafer processing adhesive tape and semiconductor wafer |
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| JP (1) | JP5697061B1 (en) |
| KR (1) | KR101766174B1 (en) |
| CN (1) | CN106104767B (en) |
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| WO (1) | WO2015146856A1 (en) |
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| JP6845134B2 (en) * | 2015-11-09 | 2021-03-17 | 古河電気工業株式会社 | Mask integrated surface protection tape |
| CN113675131A (en) * | 2015-11-09 | 2021-11-19 | 古河电气工业株式会社 | Method for manufacturing semiconductor chip and mask-integrated surface protective tape used for the method |
| WO2017170021A1 (en) * | 2016-03-30 | 2017-10-05 | リンテック株式会社 | Semiconductor processing sheet |
| JP2018184551A (en) * | 2017-04-26 | 2018-11-22 | 日東電工株式会社 | Adhesive sheet |
| JP7042667B2 (en) * | 2018-03-28 | 2022-03-28 | 古河電気工業株式会社 | Manufacturing method of semiconductor chip |
| JPWO2021020499A1 (en) * | 2019-07-31 | 2021-02-04 |
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| JP3773358B2 (en) * | 1998-07-01 | 2006-05-10 | 三井化学株式会社 | Adhesive film for semiconductor wafer back grinding and semiconductor wafer back grinding method using the same |
| JP3383227B2 (en) * | 1998-11-06 | 2003-03-04 | リンテック株式会社 | Semiconductor wafer backside grinding method |
| US6794751B2 (en) * | 2001-06-29 | 2004-09-21 | Intel Corporation | Multi-purpose planarizing/back-grind/pre-underfill arrangements for bumped wafers and dies |
| JP2011054940A (en) * | 2009-08-07 | 2011-03-17 | Nitto Denko Corp | Adhesive sheet for supporting and protecting semiconductor wafer and method for grinding back of semiconductor wafer |
| JP5705447B2 (en) * | 2010-03-31 | 2015-04-22 | 古河電気工業株式会社 | Adhesive tape for surface protection |
| JP5638439B2 (en) * | 2011-03-31 | 2014-12-10 | リンテック株式会社 | Adhesive and adhesive sheet |
| US20130001283A1 (en) * | 2011-06-29 | 2013-01-03 | Steven Friderich | Flexible Multi-Panel Sterilization Assembly |
| JP5951216B2 (en) * | 2011-10-13 | 2016-07-13 | リンテック株式会社 | Adhesive sheet and method of using the same |
| JP2013091731A (en) * | 2011-10-26 | 2013-05-16 | Denki Kagaku Kogyo Kk | Adhesive tape, adhesive tape-taken up body, and method for manufacturing the same |
| JP6220495B2 (en) * | 2012-03-01 | 2017-10-25 | 三菱ケミカル株式会社 | Transparent double-sided pressure-sensitive adhesive sheet for image display device and image display device using the same |
| JP6035325B2 (en) * | 2012-03-23 | 2016-11-30 | リンテック株式会社 | Workpiece processing sheet base material and workpiece processing sheet |
| JP5100902B1 (en) * | 2012-03-23 | 2012-12-19 | 古河電気工業株式会社 | Adhesive tape for semiconductor wafer surface protection |
| JP6393449B2 (en) | 2012-03-27 | 2018-09-19 | リンテック株式会社 | Adhesive composition, adhesive sheet, and method for manufacturing semiconductor device |
| JP5117629B1 (en) * | 2012-06-28 | 2013-01-16 | 古河電気工業株式会社 | Adhesive tape for wafer processing |
| JP5993255B2 (en) * | 2012-09-11 | 2016-09-14 | 三菱樹脂株式会社 | Acrylic resin film and dicing adhesive sheet |
| JP5480415B1 (en) * | 2012-10-11 | 2014-04-23 | 古河電気工業株式会社 | Adhesive tape for semiconductor wafer processing |
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| KR101766174B1 (en) | 2017-08-07 |
| WO2015146856A1 (en) | 2015-10-01 |
| TWI590361B (en) | 2017-07-01 |
| JP2015185692A (en) | 2015-10-22 |
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