KR20170109897A - Surface protecting adhesive film for semiconductor wafer and the manufacturing method for the same - Google Patents
Surface protecting adhesive film for semiconductor wafer and the manufacturing method for the same Download PDFInfo
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- KR20170109897A KR20170109897A KR1020160034074A KR20160034074A KR20170109897A KR 20170109897 A KR20170109897 A KR 20170109897A KR 1020160034074 A KR1020160034074 A KR 1020160034074A KR 20160034074 A KR20160034074 A KR 20160034074A KR 20170109897 A KR20170109897 A KR 20170109897A
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- South Korea
- Prior art keywords
- pressure
- sensitive adhesive
- resin
- adhesive layer
- semiconductor wafer
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 44
- 239000002313 adhesive film Substances 0.000 title claims abstract description 41
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 239000010410 layer Substances 0.000 claims abstract description 113
- 239000004820 Pressure-sensitive adhesive Substances 0.000 claims abstract description 98
- 229920001187 thermosetting polymer Polymers 0.000 claims abstract description 66
- 239000012790 adhesive layer Substances 0.000 claims abstract description 64
- 239000000203 mixture Substances 0.000 claims abstract description 60
- 229920005989 resin Polymers 0.000 claims abstract description 49
- 239000011347 resin Substances 0.000 claims abstract description 49
- 125000000524 functional group Chemical group 0.000 claims abstract description 21
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims description 28
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 claims description 27
- -1 isocyanate compound Chemical class 0.000 claims description 27
- 238000000016 photochemical curing Methods 0.000 claims description 23
- 230000009467 reduction Effects 0.000 claims description 19
- 239000000178 monomer Substances 0.000 claims description 18
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 14
- 239000012948 isocyanate Substances 0.000 claims description 11
- 229920000642 polymer Polymers 0.000 claims description 9
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 8
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 8
- 229920001577 copolymer Polymers 0.000 claims description 5
- KWVGIHKZDCUPEU-UHFFFAOYSA-N 2,2-dimethoxy-2-phenylacetophenone Chemical group C=1C=CC=CC=1C(OC)(OC)C(=O)C1=CC=CC=C1 KWVGIHKZDCUPEU-UHFFFAOYSA-N 0.000 claims description 4
- 239000004696 Poly ether ether ketone Substances 0.000 claims description 4
- 239000004642 Polyimide Substances 0.000 claims description 4
- 239000004743 Polypropylene Substances 0.000 claims description 4
- 125000003647 acryloyl group Chemical group O=C([*])C([H])=C([H])[H] 0.000 claims description 4
- 125000000217 alkyl group Chemical group 0.000 claims description 4
- 229920002530 polyetherether ketone Polymers 0.000 claims description 4
- 229920001721 polyimide Polymers 0.000 claims description 4
- 229920001155 polypropylene Polymers 0.000 claims description 4
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical group CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 claims description 3
- 125000004432 carbon atom Chemical group C* 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 229920013716 polyethylene resin Polymers 0.000 claims description 3
- 239000012956 1-hydroxycyclohexylphenyl-ketone Substances 0.000 claims description 2
- AMIJXNFLZXFHJA-UHFFFAOYSA-N 2-dimethylphosphoryl-1-(2,4,6-trimethylphenyl)ethanone Chemical compound CC1=C(C(=O)CP(C)(C)=O)C(=CC(=C1)C)C AMIJXNFLZXFHJA-UHFFFAOYSA-N 0.000 claims description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 2
- 230000001588 bifunctional effect Effects 0.000 claims description 2
- MQDJYUACMFCOFT-UHFFFAOYSA-N bis[2-(1-hydroxycyclohexyl)phenyl]methanone Chemical compound C=1C=CC=C(C(=O)C=2C(=CC=CC=2)C2(O)CCCCC2)C=1C1(O)CCCCC1 MQDJYUACMFCOFT-UHFFFAOYSA-N 0.000 claims description 2
- 239000012461 cellulose resin Substances 0.000 claims description 2
- 229910052731 fluorine Inorganic materials 0.000 claims description 2
- 239000011737 fluorine Substances 0.000 claims description 2
- 229920006122 polyamide resin Polymers 0.000 claims description 2
- 229920005668 polycarbonate resin Polymers 0.000 claims description 2
- 239000004431 polycarbonate resin Substances 0.000 claims description 2
- 229920005990 polystyrene resin Polymers 0.000 claims description 2
- 239000005033 polyvinylidene chloride Substances 0.000 claims description 2
- 229920001328 Polyvinylidene chloride Polymers 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 239000004800 polyvinyl chloride Substances 0.000 claims 1
- 229920000915 polyvinyl chloride Polymers 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 8
- 235000012431 wafers Nutrition 0.000 description 52
- 238000001723 curing Methods 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- GOXQRTZXKQZDDN-UHFFFAOYSA-N 2-Ethylhexyl acrylate Chemical group CCCCC(CC)COC(=O)C=C GOXQRTZXKQZDDN-UHFFFAOYSA-N 0.000 description 8
- BAPJBEWLBFYGME-UHFFFAOYSA-N Methyl acrylate Chemical compound COC(=O)C=C BAPJBEWLBFYGME-UHFFFAOYSA-N 0.000 description 8
- 238000010521 absorption reaction Methods 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- PSGCQDPCAWOCSH-UHFFFAOYSA-N (4,7,7-trimethyl-3-bicyclo[2.2.1]heptanyl) prop-2-enoate Chemical compound C1CC2(C)C(OC(=O)C=C)CC1C2(C)C PSGCQDPCAWOCSH-UHFFFAOYSA-N 0.000 description 6
- 229920002818 (Hydroxyethyl)methacrylate Polymers 0.000 description 6
- STFXXRRQKFUYEU-UHFFFAOYSA-N 16-methylheptadecyl prop-2-enoate Chemical compound CC(C)CCCCCCCCCCCCCCCOC(=O)C=C STFXXRRQKFUYEU-UHFFFAOYSA-N 0.000 description 6
- WOBHKFSMXKNTIM-UHFFFAOYSA-N Hydroxyethyl methacrylate Chemical compound CC(=C)C(=O)OCCO WOBHKFSMXKNTIM-UHFFFAOYSA-N 0.000 description 6
- 230000008901 benefit Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000001029 thermal curing Methods 0.000 description 6
- 239000000126 substance Substances 0.000 description 5
- DPNXHTDWGGVXID-UHFFFAOYSA-N 2-isocyanatoethyl prop-2-enoate Chemical compound C=CC(=O)OCCN=C=O DPNXHTDWGGVXID-UHFFFAOYSA-N 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000001747 exhibiting effect Effects 0.000 description 3
- IQPQWNKOIGAROB-UHFFFAOYSA-N isocyanate group Chemical group [N-]=C=O IQPQWNKOIGAROB-UHFFFAOYSA-N 0.000 description 3
- 238000010030 laminating Methods 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
- OMIGHNLMNHATMP-UHFFFAOYSA-N 2-hydroxyethyl prop-2-enoate Chemical compound OCCOC(=O)C=C OMIGHNLMNHATMP-UHFFFAOYSA-N 0.000 description 2
- KWOLFJPFCHCOCG-UHFFFAOYSA-N Acetophenone Chemical compound CC(=O)C1=CC=CC=C1 KWOLFJPFCHCOCG-UHFFFAOYSA-N 0.000 description 2
- UKLDJPRMSDWDSL-UHFFFAOYSA-L [dibutyl(dodecanoyloxy)stannyl] dodecanoate Chemical compound CCCCCCCCCCCC(=O)O[Sn](CCCC)(CCCC)OC(=O)CCCCCCCCCCC UKLDJPRMSDWDSL-UHFFFAOYSA-L 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 2
- WERYXYBDKMZEQL-UHFFFAOYSA-N butane-1,4-diol Chemical compound OCCCCO WERYXYBDKMZEQL-UHFFFAOYSA-N 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 239000012975 dibutyltin dilaurate Substances 0.000 description 2
- GHLKSLMMWAKNBM-UHFFFAOYSA-N dodecane-1,12-diol Chemical compound OCCCCCCCCCCCCO GHLKSLMMWAKNBM-UHFFFAOYSA-N 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 238000013007 heat curing Methods 0.000 description 2
- MSLCOWHBLCTBOW-UHFFFAOYSA-N hex-5-ene-2,4-dione Chemical compound CC(=O)CC(=O)C=C MSLCOWHBLCTBOW-UHFFFAOYSA-N 0.000 description 2
- 239000011254 layer-forming composition Substances 0.000 description 2
- RBQRWNWVPQDTJJ-UHFFFAOYSA-N methacryloyloxyethyl isocyanate Chemical compound CC(=C)C(=O)OCCN=C=O RBQRWNWVPQDTJJ-UHFFFAOYSA-N 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- GAWIXWVDTYZWAW-UHFFFAOYSA-N C[CH]O Chemical group C[CH]O GAWIXWVDTYZWAW-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 238000007334 copolymerization reaction Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- XXMIOPMDWAUFGU-UHFFFAOYSA-N hexane-1,6-diol Chemical compound OCCCCCCO XXMIOPMDWAUFGU-UHFFFAOYSA-N 0.000 description 1
- 150000002513 isocyanates Chemical class 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- SLCVBVWXLSEKPL-UHFFFAOYSA-N neopentyl glycol Chemical compound OCC(C)(C)CO SLCVBVWXLSEKPL-UHFFFAOYSA-N 0.000 description 1
- 239000011941 photocatalyst Substances 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
Images
Classifications
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- C09J7/0296—
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B27/08—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
- C09J133/04—Homopolymers or copolymers of esters
- C09J133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
- C09J133/08—Homopolymers or copolymers of acrylic acid esters
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
- C09J133/04—Homopolymers or copolymers of esters
- C09J133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
- C09J133/10—Homopolymers or copolymers of methacrylic acid esters
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
- C09J133/04—Homopolymers or copolymers of esters
- C09J133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
- C09J133/10—Homopolymers or copolymers of methacrylic acid esters
- C09J133/12—Homopolymers or copolymers of methyl methacrylate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02304—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment formation of intermediate layers, e.g. buffer layers, layers to improve adhesion, lattice match or diffusion barriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
- H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
- H01L2924/3512—Cracking
- H01L2924/35121—Peeling or delaminating
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Adhesive Tapes (AREA)
- Adhesives Or Adhesive Processes (AREA)
Abstract
Wherein the adhesive layer comprises a base layer, an intermediate layer and an adhesive layer, wherein the adhesive layer is a further photo-curable adhesive layer comprising a photoinitiator, wherein the weight ratio of the photoinitiator to the total weight of the adhesive layer is 1000 ppm to 3000 ppm Thereby providing an adhesive film.
Also, there is provided a method of manufacturing a semiconductor device, comprising the steps of: preparing an intermediate layer disposed on one surface of a substrate layer; Preparing a pressure-sensitive adhesive composition comprising a thermosetting resin having a photocurable functional group, a thermosetting agent and a photoinitiator; And applying the pressure-sensitive adhesive composition to one surface of the intermediate layer and thermally curing the pressure-sensitive adhesive layer to produce a thermosetting pressure-sensitive adhesive layer having a weight ratio of the photoinitiator of 1000 ppm to 3000 ppm based on the total weight of the pressure- ≪ / RTI >
Description
The present invention relates to a pressure-sensitive adhesive film which acts to protect a surface of a semiconductor wafer by attaching to a surface of a semiconductor wafer when it is necessary to protect the surface of the semiconductor wafer.
Recently, miniaturization and lightening of electronic products are rapidly proceeding, and there is an increasing demand for leadless, thinned, and highly integrated chips in semiconductor packages. In response to this demand, there is also an increasing demand for large-scale curing and thinning of the wafers included in the semiconductor package.
However, due to the progress of the hardening of the wafer, wafers are often damaged such as wafer contamination and cracking during the back grinding process, and thus the role of the adhesive film for protecting the surface of the semiconductor wafer becomes more important.
Further, the adhesive film used in semiconductor wafer processing must be peeled off after the processing is completed, and peeled off without damaging the semiconductor surface without leaving a residue upon peeling.
An embodiment of the present invention provides a pressure sensitive adhesive film for protecting a surface of a semiconductor wafer, which can realize a rapid peeling force reduction even with a small amount of light energy.
Another embodiment of the present invention provides a method for manufacturing a pressure sensitive adhesive film for protecting a surface of a semiconductor wafer, wherein the pressure sensitive adhesive layer can be controlled so as to exhibit a rapid peeling force lowering property even with a small amount of light energy of components and physical properties of the pressure sensitive adhesive layer.
In one embodiment of the invention, the adhesive layer comprises a substrate layer, an intermediate layer and an adhesive layer, wherein the adhesive layer is a further photo-curable thermosetting adhesive layer comprising a photoinitiator, wherein the weight ratio of the photoinitiator to the total weight of the adhesive layer is A pressure-sensitive adhesive film for protecting a surface of a semiconductor wafer, the pressure-sensitive adhesive film being 1000 ppm to 3000 ppm.
In another embodiment of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: fabricating an intermediate layer disposed on one surface of a base layer; Preparing a pressure-sensitive adhesive composition comprising a thermosetting resin having a photocurable functional group, a thermosetting agent and a photoinitiator; And a step of preparing a pressure-sensitive adhesive layer containing a thermoset material of the pressure-sensitive adhesive composition on one side of the intermediate layer, wherein the weight ratio of the photoinitiator to the total weight of the pressure-sensitive adhesive layer is about 1000 ppm to 3000 ppm ≪ / RTI >
The pressure-sensitive adhesive film for protecting a surface of a semiconductor wafer has an abrupt peeling force descending rate even when the pressure-sensitive adhesive layer contains a predetermined amount of a photoinitiator even under a light curing condition by a small amount of light energy irradiation, A peelable effect can be realized without leaving a residue.
In addition, the adhesive layer for realizing the above-described advantageous properties from the pressure-sensitive adhesive composition can be efficiently produced through the above-described method for producing a pressure-sensitive adhesive film for protecting a surface of a semiconductor wafer.
1 schematically shows a cross section of a pressure-sensitive adhesive film for protecting a surface of a semiconductor wafer according to an embodiment of the present invention.
BRIEF DESCRIPTION OF THE DRAWINGS The above and other features and advantages of the present invention will become more apparent by describing in detail exemplary embodiments thereof with reference to the attached drawings in which: These embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art to which the invention pertains. Only. Like reference numerals refer to like elements throughout the specification.
In the drawings, the thickness is enlarged to clearly represent the layers and regions. In the drawings, for the convenience of explanation, the thicknesses of some layers and regions are exaggerated.
In one embodiment of the invention, the adhesive layer comprises a substrate layer, an intermediate layer and an adhesive layer, wherein the adhesive layer is a further photo-curable thermosetting adhesive layer comprising a photoinitiator, wherein the weight ratio of the photoinitiator to the total weight of the adhesive layer is A pressure-sensitive adhesive film for protecting a surface of a semiconductor wafer having a pressure of about 1000 ppm to about 3000 ppm.
1 schematically shows a cross section of a pressure-sensitive adhesive film for protecting a surface of a semiconductor wafer according to an embodiment of the present invention.
1, the
Specifically, when the adhesive film is used for a backgrinding process of a wafer on which a structure having a step of about 30 mu m to about 100 mu m is disposed on a surface through a structure including a base layer, an intermediate layer and an adhesive layer, It can be advantageous to adhere well while effectively absorbing the step difference.
Thicknesses of the base layer, the intermediate layer and the pressure-sensitive adhesive layer are not particularly limited as long as they can be adjusted depending on the application. For example, the pressure-sensitive adhesive film may have a structure having a step of about 30 탆 to about 100 탆 like a bump When applied to the surface of a placed wafer, the
The thickness of the
The adhesive film for protecting the surface of the semiconductor wafer serves to prevent a circuit pattern or the like present on the surface from being damaged or contamination of the wafer due to foreign substances or chemical substances generated during the process . The adhesive film must be removed after the semiconductor wafer is precisely processed, and it is important that the surface of the wafer is removed without peeling off the surface of the wafer.
In one embodiment, the adhesive film comprises a photoinitiator and includes a further photo-curable adhesive layer, which can rapidly reduce the adhesive force through further photocuring after the wafer processing is complete, And has the advantage of exhibiting a radical peeling force lowering characteristic despite the energy irradiation.
The pressure-sensitive adhesive layer is formed as a thermosetting adhesive layer by thermosetting at a predetermined temperature and time. Generally, in the case of a thermosetting adhesive layer, there is a problem that the photoinitiator contained in the raw material pressure-sensitive adhesive composition is damaged during the process of thermosetting at a high temperature and is difficult to remain.
In one embodiment of the present invention, the adhesive layer has a weight ratio of the photoinitiator to the total weight thereof of from about 1000 ppm to about 3000 ppm. For example, the weight ratio of the photoinitiator may be from about 1000 ppm to about 2000 ppm. The pressure-sensitive adhesive layer contains the photoinitiator in the above-described range even after thermosetting from the raw material pressure-sensitive adhesive composition, so that an advantage that the rapid peeling force is lowered due to light energy of a small amount of light after completion of the semiconductor process can be obtained. When the content of the photoinitiator is less than the above range, it is difficult to ensure physical properties that exhibit a rapid detachment of the photocatalyst due to the light curing with a small amount of light energy. When the content exceeds the above range, the photoinitiator The stability with time of the pressure-sensitive adhesive layer may be lowered.
The adhesive layer must have a stepped end attached to the surface of the wafer during the processing of the wafer, such as backgrinding, and must exhibit a peel force of at least a certain level with respect to the surface of the wafer. Specifically, the peeling force of the adhesive layer on the wafer surface can be about 500 g / 25 mm or more, for example, about 500 g / 25 mm to about 1500 g / 25 mm, for example, about 800 g / 25 mm to about 1200 g / 25 mm. Since the adhesive layer has the peeling force in the above range, it can be firmly adhered to the surface of the wafer during the processing of the wafer surface to perform the function of protecting the surface, and a predetermined peeling force can be reduced on the basis of the peeling force in the above- So that the adhesive film can be removed well without any damage or peeling residue on the wafer surface.
The adhesive layer may have a peeling force reduction rate of about 90% or more according to the following formula 1 at the time of additional photo-curing by light energy of about 0.3J to about 1J. For example, the peeling force reduction rate may be about 90% 95%, for example from about 93% to about 95%.
[Formula 1]
Peeling force reduction rate (%) = (X - Y) / X x 100
In the above formula (1), X is the peeling force of the adhesive layer before further photo-curing, and Y is the peeling force of the adhesive layer after further photo-curing.
When the adhesive layer exhibits a peeling force reduction rate in the above range in the case of additional light curing according to light energy of a small amount of light in the above-mentioned range, the energy efficiency of the removal process of the adhesive film can be improved, It is possible to prevent damage to the surface of the wafer due to abrasion or damage to the surface of the wafer upon removal of the adhesive film.
The pressure-sensitive adhesive layer is a further photo-curable thermosetting pressure-sensitive adhesive layer, which comprises a thermosetting composition of a pressure-sensitive adhesive composition. Specifically, the pressure-sensitive adhesive composition may include a thermosetting resin having a photo-curable functional group, a thermosetting agent and a photoinitiator.
The thermosetting resin having a photo-curable functional group is a resin capable of both thermal curing and photo-curing of the chemical structure itself. Specifically, the thermosetting resin includes a (meth) acrylate having a carbon number of 1 to 15 and a A main chain in which a mixed monomer component is polymerized or copolymerized; And an isocyanate compound having an acryloyl group at the terminal may include a side chain chemically bonded to the main chain.
More specifically, the thermosetting resin having a photocurable functional group includes a structural unit derived from a hydroxy group-containing (meth) acrylate in the main chain, thereby having a hydroxyl group. The isocyanate group of the isocyanate compound having an acryloyl group at the terminal may be chemically reacted with at least a part of the hydroxyl groups in the main chain of the resin to bind to form a side chain.
For example, the isocyanate compound may form a side chain by reacting with about 85 mol% to about 95 mol% of a hydroxyl group in 100 mol% of the total of the hydroxyl groups in the main chain of the resin.
The isocyanate compound having an acryloyl group for forming the side chain may include one selected from the group consisting of acryloyloxyethyl isocyanate (AOI), methacryloyloxyethyl isocyanate (MOI), and combinations thereof.
The alkyl (meth) acrylate constituting the main chain is an acrylate compound having a linear or branched alkyl group having 1 to 15 carbon atoms, such as methyl (meth) acrylate, ethyl (meth) acrylate, n- (Meth) acrylate, isopropyl (meth) acrylate, n-butyl (meth) acrylate, sec- (Meth) acrylate, n-octyl (meth) acrylate, isooctyl (meth) acrylate, isononyl And combinations thereof.
The hydroxy group-containing (meth) acrylate may be at least one selected from the group consisting of hydroxyethyl (meth) acrylate, hydroxypropyl (meth) acrylate, hydroxybutyl (meth) acrylate, hydroxypentyl (Meth) acrylate, hydroxyoctyl (meth) acrylate, hydroxydecyl (meth) acrylate, and combinations thereof.
In one embodiment, the mixed monomer component for forming the backbone of the resin comprises about 70 to about 90 parts by weight of an alkyl (meth) acrylate having 1 to 15 carbon atoms; And about 10 to 30 parts by weight of the hydroxy group-containing (meth) acrylate.
When the main chain is formed by polymerization or copolymerization of a specific (meth) acrylate compound of the above-mentioned kind, chemical bonding with the isocyanate compound for side chain formation can be easily formed when considering the positional relationship and reactivity, By forming a main chain having a long chain, it is possible to achieve a desired degree of stickiness and a reduction in peel strength.
In addition, the main chain may impart appropriate thermosetting property to the pressure-sensitive adhesive composition. That is, the remaining hydroxy groups that are not chemically reacted with the isocyanate compound among the hydroxyl groups present in the main chain can perform a thermosetting function.
That is, as described above, the isocyanate compound can form a side chain by reacting with about 85 mol% to about 95 mol% of a hydroxyl group in 100 mol% of all the hydroxyl groups in the main chain of the resin, From about 5 mol% to about 15 mol% of the hydroxyl groups can perform the thermosetting function. As a result, the resin can be properly cured by thermal energy that does not damage the photoinitiator, and the additional photo-curable properties can be easily ensured.
The side chain is to impart photo-curability to the resin. The side chain is formed by chemically bonding a specific compound of the above-mentioned kind to the main chain to thereby provide a free-acryloyloxy group after thermal curing, thereby exhibiting additional photocurable properties .
The thermosetting resin having the photocurable functional group may have a weight average molecular weight (Mw) of about 300,000 g / mol to about 1,500,000 g / mol, and may have a weight average molecular weight (Mw) of about 500,000 g / mol to about 1,000,000 g / mol Lt; / RTI > When the resin has a weight average molecular weight (Mw) in the above range, the viscosity of the pressure-sensitive adhesive composition can be maintained at an appropriate level. In the process of manufacturing the pressure-sensitive adhesive film for protecting the semiconductor wafer surface, can do. In addition, the resin having the weight average molecular weight (Mw) in the above range may be thermally cured to form a pressure-sensitive adhesive layer having a required level of adhesive strength.
The pressure-sensitive adhesive composition includes a thermosetting agent, and the thermosetting agent performs a crosslinking reaction with the thermosetting functional group of the resin so that the pressure-sensitive adhesive layer exhibits an appropriate peeling force.
Specifically, the thermosetting agent may include bifunctional to hexafunctional isocyanate-based compounds. The compound having an isocyanate functional group within the above range is used as a thermosetting agent, so that it can be easily handled, and the advantage of being reacted with the resin and curing speed is obtained.
The pressure-sensitive adhesive composition may contain about 0.5 to about 5 parts by weight, for example, about 1 to about 3 parts by weight of the thermosetting agent per 100 parts by weight of the thermosetting resin having the photocurable functional group. The pressure-sensitive adhesive composition can form a thermosetting adhesive layer having an appropriate gel content at the time of thermosetting through the above-mentioned thermosetting agent. If the content of the thermosetting agent exceeds the above range, the thermosetting adhesive layer becomes too hard and the bump absorption performance may be deteriorated.
The pressure-sensitive adhesive composition includes a photoinitiator, and the photoinitiator serves to initiate photo-curing of the resin upon further photo-curing of the thermosetting adhesive layer. The photoinitiator should be stored in the adhesive layer without being damaged or lost when the pressure-sensitive adhesive composition is thermally cured to form the thermoset adhesive layer. For example, 2,2-dimethoxy-2-phenylacetophenone, 1 -Hydroxycyclohexyl phenyl ketone, 2,4,6-trimethyl-benzoyl-trimethyl phosphine oxide, and combinations thereof. The photoinitiator of the above type is particularly resistant to heat and can be highly preserved at the time of thermal curing of the pressure-sensitive adhesive composition, and the photo-curing reaction of the resin can be advanced at high efficiency during the further photo-curing, have.
The pressure-sensitive adhesive composition may contain about 1 to about 15 parts by weight, for example, about 5 to about 10 parts by weight of the photoinitiator, based on 100 parts by weight of the thermosetting resin having the photocurable functional group. Since the pressure-sensitive adhesive composition contains the photoinitiator in the above-mentioned range, it can have an advantage that the photoinitiator is not damaged or lost upon thermal curing although it contains a small amount of the photoinitiator, and a proper range of photoinitiator By the residual, it is possible to obtain the advantage of obtaining a necessary effect of reducing the peeling force by additional light curing.
The pressure-sensitive adhesive composition may further include a catalyst or a curing retarder as an additive. The catalyst serves to increase the rate of thermal curing, and may specifically include dibutyltin dilaurate (DBTDL). In addition, the curing retarder serves to ensure stability after compounding the pressure-sensitive adhesive composition, and may include, for example, acrylacetone.
1, the adhesive film for protecting a surface of a semiconductor wafer includes a
The
The
The
For example, the (meth) acrylic ester monomer for forming the partial polymer is selected from the group consisting of ethylhexyl acrylate (EHA), isobornyl acrylate (IBOA), methyl acrylate (MA), hydroxyethyl methacrylate (HEA) , Isostearyl acrylate (ISTA), and combinations thereof.
In one embodiment, the monomer component comprises about 40 to about 60 parts by weight of ethylhexyl acrylate (EHA); About 10 to about 20 parts by weight of isobornyl acrylate (IBOA); About 10 to about 20 parts by weight of isostearyl acrylate (ISTA); And about 10 to about 30 parts by weight of hydroxyethyl acrylate (HEA). In this case, the intermediate layer realizes excellent step difference absorbing performance, and adheres to the base layer and the adhesive layer with appropriate adhesive force, thereby contributing to securing the durability of the adhesive film itself.
Partial polymerizates of the (meth) acrylic acid ester-based monomer include a polymer or copolymer formed by polymerizing about 5% by weight to about 30% by weight of monomers relative to the total weight of the monomer components. That is, the partial polymerizate may include both the polymer or copolymer and the monomer.
The monomers in the above range are polymerized to partially form a polymer or a copolymer by the total weight of the monomer components, so that the intermediate layer-forming composition containing the partial polymer can secure an appropriate viscosity. In the process of applying the composition An excellent coating property can be secured. In addition, the composition for forming an intermediate layer is photo-cured, and an excellent step difference absorption performance can be realized.
The intermediate layer may be a photo-cured product of the composition for forming an intermediate layer, and the composition for forming an intermediate layer may further include one selected from the group consisting of a photoinitiator, a photo-curing agent, and a combination thereof together with the partial polymer.
The photoinitiator can be used without particular limitation as long as it can initiate the photo-curing reaction of the partial polymer.
The photocuring agent may be selected from the group consisting of 1,4-butanediol di (meth) acrylate, 1,6-hexanediol di (meth) acrylate, neopentyl glycol di (meth) acrylate, 1,2- But are not limited to, one selected from the group consisting of polyethylene glycol di (meth) acrylate, 1,12-dodecanediol di (meth) acrylate, and combinations thereof.
In another embodiment of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: fabricating an intermediate layer disposed on one surface of a base layer; Preparing a pressure-sensitive adhesive composition comprising a thermosetting resin having a photocurable functional group, a thermosetting agent and a photoinitiator; And a step of preparing a pressure-sensitive adhesive layer containing a thermoset material of the pressure-sensitive adhesive composition on one side of the intermediate layer, wherein the weight ratio of the photoinitiator to the total weight of the pressure-sensitive adhesive layer is about 1000 ppm to 3000 ppm ≪ / RTI >
More specifically, the step of preparing the intermediate layer disposed on one side of the substrate layer includes: coating a composition for forming an intermediate layer on a separate release film, and then photo-curing the intermediate film to produce a laminate of an intermediate layer and a release film; And peeling off the release film after laminating the intermediate layer of the laminate on one side of the base layer so as to be in contact with each other.
The step of preparing the pressure-sensitive adhesive layer on one side of the intermediate layer may include: forming a pressure-sensitive adhesive layer having a weight ratio of the photoinitiator of about 1000 ppm to 3000 ppm by applying the pressure-sensitive adhesive composition on a separate release film; And laminating the adhesive layer on one surface of the intermediate layer.
As described above, the intermediate layer and the adhesive layer are separately formed on the release film, and then the adhesive film is sequentially prepared by sequentially laminating the adhesive film, so that the interface and surface properties of each layer can be appropriately secured for the semiconductor process.
In the method for producing an adhesive film, the base layer and the intermediate layer are as described above, and the composition for forming the intermediate layer is as described above.
The method for producing an adhesive film includes a step of preparing a pressure-sensitive adhesive composition comprising a thermosetting resin having a photo-curable functional group, a heat curing agent and a photoinitiator. The matters relating to the thermosetting resin having the photocurable functional group, the thermosetting agent and the photoinitiator are as described above.
The pressure-sensitive adhesive composition may include about 1 part by weight to about 15 parts by weight of the photoinitiator relative to 100 parts by weight of the thermosetting resin having the photocurable functional group, for example, about 5 to 12 parts by weight have. When the pressure-sensitive adhesive composition contains the photoinitiator in the above-described range, it is easy to leave the desired content of the photoinitiator after the thermal curing, whereby the heat-cured pressure-sensitive adhesive layer can exhibit excellent photo-
The viscosity of the pressure-sensitive adhesive composition may be about 300 cps to about 3000 cps. The pressure-sensitive adhesive composition may include both of the above-mentioned components in order to obtain a desired effect in one embodiment, and may have excellent coating properties when applied to one surface of the intermediate layer by controlling the viscosity within the above-described range.
When the pressure-sensitive adhesive composition is thermally cured to produce the pressure-sensitive adhesive layer, the pressure-sensitive adhesive layer is prepared such that the weight ratio of the photoinitiator to the total weight thereof is about 1000 ppm to about 3000 ppm. The above-mentioned pressure-sensitive adhesive layer can be further photo-curable by containing the photoinitiator in the above-mentioned range, and can exhibit an abrupt peeling force reduction effect with further photo-curing.
Specifically, the content of the photoinitiator in the final pressure-sensitive adhesive layer can satisfy the above range by suitably controlling the kind and content ratio of each component and appropriately setting the thermosetting conditions as described above.
Specifically, the thermosetting of the pressure-sensitive adhesive composition may be performed at about 60 캜 to about 130 캜 for about 60 seconds to about 200 seconds. The pressure-sensitive adhesive composition can be thermally cured at the temperature and time in the above range to prevent the loss and damage of the photoinitiator and to obtain a heat-cured pressure-sensitive adhesive layer exhibiting an excellent peeling force reduction effect by further photo-curing.
The adhesive layer must have a stepped end attached to the surface of the wafer during the processing of the wafer, such as backgrinding, and must exhibit a peel force of at least a certain level with respect to the surface of the wafer. Specifically, the peeling force of the adhesive layer on the wafer surface can be about 500 g / 25 mm or more, for example, about 500 g / 25 mm to about 1500 g / 25 mm, for example, about 800 g / 25 mm to about 1200 g / 25 mm. By having the peeling force in the above range, it is possible to firmly adhere to the surface of the wafer during the processing of the wafer to perform the function of protecting the surface, and a predetermined peeling force is reduced on the basis of the peeling force in the above- The adhesive film can be removed well without damage or peeling residue.
The adhesive layer produced by the above-described method may have a peeling force reduction rate of about 80% or more at the time of additional photocuring by light energy of about 300 mJ to about 1000 mJ. For example, the peeling force reduction rate is about From about 90% to about 95%, for example from about 93% to about 95%.
[Formula 1]
Peeling force reduction rate (%) = (X - Y) /
In the above formula (1), X is the peeling force of the adhesive layer before further photo-curing, and Y is the peeling force of the adhesive layer after further photo-curing.
When the adhesive layer exhibits a peeling force reduction rate in the above range in the case of additional light curing according to light energy of a small amount of light in the above-mentioned range, the energy efficiency of the removal process of the adhesive film can be improved, It is possible to prevent damage to the surface of the wafer due to abrasion or damage to the surface of the wafer upon removal of the adhesive film.
Hereinafter, specific embodiments of the present invention will be described. However, the embodiments described below are only intended to illustrate or explain the present invention, and thus the present invention should not be limited thereto.
<
Example
And
Comparative Example
>
Example One
A composition for forming an intermediate layer was applied onto a release film made of polyethylene terephthalate (PET), light cured by irradiation with light energy of 1000 mJ to prepare an intermediate layer having a thickness of 100 mu m, and a laminate of a release film and an intermediate layer was produced. The intermediate layer forming composition was prepared by mixing 50 parts by weight of ethylhexyl acrylate (EHA), 15 parts by weight of isobornyl acrylate (IBOA), 15 parts by weight of isostearyl acrylate (ISTA) and 20 parts by weight of hydroxyethylmethacrylate (HEA) 20 And 10 parts by weight of a mixed monomer component including 10 parts by weight of the total monomer component, and 0.5 part by weight of the acetophenone-based photoinitiator relative to 100 parts by weight of the partial polymer. A polyethylene (PE) resin film having a thickness of 120 mu m was prepared as a base layer, and the intermediate layer of the laminate was held in contact with the base layer, and the release film was peeled off.
On the other hand, a copolymer of a monomer component containing 54 parts by weight of ethylhexyl acrylate (EHA), 23 parts by weight of methyl acrylate (MA) and 23 parts by weight of hydroxyethyl acrylate (HEA) was prepared and its
3 parts by weight of a hexahydroxy isocyanate compound as a heat curing agent was mixed with 100 parts by weight of the thermosetting resin having the photo-curable functional group, 10 parts by weight of 2,2-dimethoxy-2-phenylacetophenone was mixed as a photoinitiator, And 1 part by weight of acrylacetone as a retarder were mixed to prepare a pressure-sensitive adhesive composition.
The pressure-sensitive adhesive composition was applied onto a release film made of polyethylene terephthalate (PET) and thermally cured at 90 DEG C for 180 seconds to form an adhesive layer having a thickness of 10 mu m having a weight ratio of the photoinitiator of 1008 ppm to the total weight of the pressure- , A release film and an adhesive layer were prepared. A laminate was laminated on the upper part of the intermediate layer so that the adhesive layer was in contact with the adhesive layer, and the release film was peeled off to produce an adhesive film comprising a base layer, an intermediate layer and an adhesive layer.
Example 2
The pressure-sensitive adhesive composition was thermally cured at 90 ° C. for 120 seconds and adhered in the same manner as in Example 1 except that a 10 μm thick pressure-sensitive adhesive layer having a weight ratio of the photoinitiator of 1681 ppm to the total weight of the pressure- A film was prepared.
Example 3
The pressure-sensitive adhesive composition was thermally cured at 110 ° C. for 120 seconds and adhered in the same manner as in Example 1 except that a 10 μm thick pressure-sensitive adhesive layer having a weight ratio of the photoinitiator of 1018 ppm to the total weight of the pressure- A film was prepared.
Example 4
The pressure-sensitive adhesive composition includes 5 parts by weight of 2,2-dimethoxy-2-phenylacetophenone photoinitiator per 100 parts by weight of the thermosetting resin having the photocurable functional group, and the pressure-sensitive adhesive composition is thermally cured at 110 DEG C for 120 seconds An adhesive film was prepared in the same manner as in Example 1, except that a 20 μm thick pressure-sensitive adhesive layer having a weight ratio of the photoinitiator of 2331 ppm to the total weight of the pressure-sensitive adhesive layer was prepared.
Comparative Example One
The pressure-sensitive adhesive composition was thermally cured at 110 ° C. for 180 seconds and adhered in the same manner as in Example 1 except that a 10 μm thick pressure-sensitive adhesive layer having a weight ratio of the photoinitiator of 823 ppm to the total weight of the pressure- A film was prepared.
Comparative Example 2
The pressure-sensitive adhesive composition was thermally cured at 110 ° C. for 300 seconds and adhered in the same manner as in Example 1 except that a 20 μm thick pressure-sensitive adhesive layer having a weight ratio of the photoinitiator of 723 ppm based on the total weight of the pressure- A film was prepared.
<Evaluation>
Experimental Example One: Peel force And Peel force Measurement of reduction rate
For each of the pressure-sensitive adhesive layers of the examples and the comparative examples, the peeling force (X) before the further photo-curing was measured. Subsequently, the adhesive layer was further cured by light energy of 0.5 J, and the peeling force (Y) after the photo-curing was measured. Thereafter, the peeling force reduction rate according to the following formula 1 was derived. The peeling force (X, Y) was measured by a method of ASTM D330 by a texture analyzer. The results are shown in Table 1 below.
[Formula 1]
Peeling force reduction rate (%) = (X - Y) /
Experimental Example 2: Step Evaluation of absorption performance
Each of the pressure-sensitive adhesive films of the examples and the comparative examples was adhered to each of the adhesive films on a cylindrical bump-patterned wafer having a height of 50 mu m and a cross-section diameter of 50 mu m and observed with a microscope, Showed the absorbed volume by the adhesive film as a percentage, and the step difference absorption performance was evaluated. Specifically, it was evaluated as "excellent" when the level difference absorption degree was from 100 volume% to 80 volume%, "insufficient" when it was between 70 volume% and 75 volume%, and "inability" when it was less than 50 volume%. The results are shown in Table 1 below.
Referring to the results of Table 1, it was found that the adhesive films of Examples 1 to 4, in which the weight ratio of the photoinitiator of the thermosetting adhesive layer corresponds to 1000 ppm to 3000 ppm, Thus, it was confirmed that the surface of the semiconductor wafer was not damaged, and it had physical properties that it was easily peeled off without residue.
100: Adhesive film
10: substrate layer
20: middle layer
30: Adhesive layer
Claims (14)
Wherein the adhesive layer is a further photo-curable thermosetting adhesive layer comprising a photoinitiator,
Wherein the weight ratio of the photoinitiator to the total weight of the pressure-sensitive adhesive layer is 1000 ppm to 3000 ppm
Adhesive film for protecting the surface of a semiconductor wafer.
The adhesive layer has a peeling force with respect to the wafer surface of 500 g / 25 mm to 1500/25 mm
Adhesive film for protecting the surface of a semiconductor wafer.
Wherein the adhesive layer has a peeling strength reduction ratio of 90% or more according to the following formula 1 according to the further photocuring by light energy of 0.3J to 1J
Adhesive film for semiconductor wafer surface protection:
[Formula 1]
Peeling force reduction rate (%) = (X - Y) / X x 100
In the above formula (1), X is the peeling force of the additional photocuring adhesive layer, and Y is a peeling force of the adhesive layer after the further photocuring.
Wherein the adhesive layer comprises a thermosetting composition of a pressure-sensitive adhesive composition comprising a thermosetting resin having a photocurable functional group, a thermosetting agent and a photoinitiator
Adhesive film for protecting the surface of a semiconductor wafer.
The thermosetting resin having the photo-
A main chain which is a polymer or copolymer of a mixed monomer component comprising an alkyl (meth) acrylate having 1 to 15 carbon atoms and a hydroxy group-containing (meth) acrylate; And
And a side chain in which an isocyanate compound having an acryloyl group at its end is chemically bonded to the main chain
Adhesive film for protecting the surface of a semiconductor wafer.
The thermosetting resin having a photocurable functional group has a weight average molecular weight (Mw) of 300,000 g / mol to 1,500,000 g / mol
Adhesive film for protecting the surface of a semiconductor wafer.
Wherein the thermosetting agent comprises a bifunctional to hexafunctional isocyanate compound
Adhesive film for protecting the surface of a semiconductor wafer.
Wherein the photoinitiator is selected from the group consisting of 2,2-dimethoxy-2-phenylacetophenone, 1-hydroxycyclohexyl phenyl ketone, 2,4,6-trimethyl-benzoyl-trimethylphosphine oxide, Included
Adhesive film for protecting the surface of a semiconductor wafer.
Wherein the pressure-sensitive adhesive composition comprises 0.5 to 5 parts by weight of the thermosetting agent relative to 100 parts by weight of the thermosetting resin having the photocurable functional group
Adhesive film for protecting the surface of a semiconductor wafer.
Wherein the pressure-sensitive adhesive composition comprises 1 to 15 parts by weight of the photoinitiator, based on 100 parts by weight of the thermosetting resin having the photocurable functional group
Adhesive film for protecting the surface of a semiconductor wafer.
The base layer may be formed of a resin such as polyethylene terephthalate (PET) resin, polyethylene (PE) resin, polypropylene (PP) resin, polyimide (PI) resin, polyetheretherketone (PEEK) resin, polyvinyl chloride (PVDC) resin, a polyamide resin, a polystyrene resin, a polycarbonate resin, a fluorine resin, a cellulose resin, and a combination thereof.
Adhesive film for protecting the surface of a semiconductor wafer.
The intermediate layer is a photo-cured product of a composition for forming an intermediate layer comprising a partial polymerized product of a monomer component containing at least one (meth) acrylic acid ester-based monomer
Adhesive film for protecting the surface of a semiconductor wafer.
Preparing a pressure-sensitive adhesive composition comprising a thermosetting resin having a photocurable functional group, a thermosetting agent and a photoinitiator; And
Preparing a pressure-sensitive adhesive layer containing a thermoset material of the pressure-sensitive adhesive composition on one surface of the intermediate layer and having a weight ratio of the photoinitiator to the total weight of the pressure-sensitive adhesive layer of about 1000 ppm to 3000 ppm;
A method for manufacturing a pressure sensitive adhesive film for protecting a surface of a semiconductor wafer.
The thermosetting composition of the pressure-sensitive adhesive composition may be prepared by heating the pressure-sensitive adhesive composition at 60 ° C to 130 ° C for 60 seconds to 200 seconds
A method for manufacturing a pressure sensitive adhesive film for protecting a surface of a semiconductor wafer.
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| KR20200038637A (en) * | 2018-10-04 | 2020-04-14 | 주식회사 두산 | Protection film for processing |
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|---|---|---|---|---|
| JP2011187832A (en) * | 2010-03-10 | 2011-09-22 | Hitachi Maxell Ltd | Adhesive sheet for grinding wafer back face, method of manufacturing the same, and method of using the same |
| KR20130048443A (en) * | 2011-11-02 | 2013-05-10 | (주)엘지하우시스 | Adhesive film for protecting surfase of semiconductorwafer which has excellent cutting property |
| KR20140105156A (en) * | 2013-02-22 | 2014-09-01 | (주)엘지하우시스 | Surface protecting adhesive film for semiconductor wafer |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011187832A (en) * | 2010-03-10 | 2011-09-22 | Hitachi Maxell Ltd | Adhesive sheet for grinding wafer back face, method of manufacturing the same, and method of using the same |
| KR20130048443A (en) * | 2011-11-02 | 2013-05-10 | (주)엘지하우시스 | Adhesive film for protecting surfase of semiconductorwafer which has excellent cutting property |
| KR20140105156A (en) * | 2013-02-22 | 2014-09-01 | (주)엘지하우시스 | Surface protecting adhesive film for semiconductor wafer |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20200038637A (en) * | 2018-10-04 | 2020-04-14 | 주식회사 두산 | Protection film for processing |
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