KR102040260B1 - Surface protecting adhesive film for semiconductor wafer and the manufacturing method for the same - Google Patents
Surface protecting adhesive film for semiconductor wafer and the manufacturing method for the same Download PDFInfo
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- KR102040260B1 KR102040260B1 KR1020160034074A KR20160034074A KR102040260B1 KR 102040260 B1 KR102040260 B1 KR 102040260B1 KR 1020160034074 A KR1020160034074 A KR 1020160034074A KR 20160034074 A KR20160034074 A KR 20160034074A KR 102040260 B1 KR102040260 B1 KR 102040260B1
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- resin
- sensitive adhesive
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- 239000002313 adhesive film Substances 0.000 title claims abstract description 44
- 239000004065 semiconductor Substances 0.000 title claims description 42
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000010410 layer Substances 0.000 claims abstract description 119
- 239000004820 Pressure-sensitive adhesive Substances 0.000 claims abstract description 92
- 229920001187 thermosetting polymer Polymers 0.000 claims abstract description 76
- 239000012790 adhesive layer Substances 0.000 claims abstract description 65
- 239000000203 mixture Substances 0.000 claims abstract description 59
- 229920005989 resin Polymers 0.000 claims abstract description 49
- 239000011347 resin Substances 0.000 claims abstract description 49
- 238000000034 method Methods 0.000 claims abstract description 27
- 125000000524 functional group Chemical group 0.000 claims abstract description 22
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 20
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 claims description 35
- 238000000016 photochemical curing Methods 0.000 claims description 34
- -1 Isocyanate compound Chemical class 0.000 claims description 31
- 230000009467 reduction Effects 0.000 claims description 20
- 239000000178 monomer Substances 0.000 claims description 19
- 230000004224 protection Effects 0.000 claims description 17
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 15
- 229920000642 polymer Polymers 0.000 claims description 15
- 239000012948 isocyanate Substances 0.000 claims description 11
- GOXQRTZXKQZDDN-UHFFFAOYSA-N 2-Ethylhexyl acrylate Chemical compound CCCCC(CC)COC(=O)C=C GOXQRTZXKQZDDN-UHFFFAOYSA-N 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 9
- PSGCQDPCAWOCSH-UHFFFAOYSA-N (4,7,7-trimethyl-3-bicyclo[2.2.1]heptanyl) prop-2-enoate Chemical compound C1CC2(C)C(OC(=O)C=C)CC1C2(C)C PSGCQDPCAWOCSH-UHFFFAOYSA-N 0.000 claims description 8
- STFXXRRQKFUYEU-UHFFFAOYSA-N 16-methylheptadecyl prop-2-enoate Chemical compound CC(C)CCCCCCCCCCCCCCCOC(=O)C=C STFXXRRQKFUYEU-UHFFFAOYSA-N 0.000 claims description 8
- OMIGHNLMNHATMP-UHFFFAOYSA-N 2-hydroxyethyl prop-2-enoate Chemical compound OCCOC(=O)C=C OMIGHNLMNHATMP-UHFFFAOYSA-N 0.000 claims description 8
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 8
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 8
- 229920001577 copolymer Polymers 0.000 claims description 6
- 125000000217 alkyl group Chemical group 0.000 claims description 5
- KWVGIHKZDCUPEU-UHFFFAOYSA-N 2,2-dimethoxy-2-phenylacetophenone Chemical group C=1C=CC=CC=1C(OC)(OC)C(=O)C1=CC=CC=C1 KWVGIHKZDCUPEU-UHFFFAOYSA-N 0.000 claims description 4
- 239000004696 Poly ether ether ketone Substances 0.000 claims description 4
- 239000004642 Polyimide Substances 0.000 claims description 4
- 239000004743 Polypropylene Substances 0.000 claims description 4
- 125000003647 acryloyl group Chemical group O=C([*])C([H])=C([H])[H] 0.000 claims description 4
- 125000004432 carbon atom Chemical group C* 0.000 claims description 4
- 229920002530 polyetherether ketone Polymers 0.000 claims description 4
- 229920001721 polyimide Polymers 0.000 claims description 4
- 229920001155 polypropylene Polymers 0.000 claims description 4
- 239000011254 layer-forming composition Substances 0.000 claims description 3
- 229920013716 polyethylene resin Polymers 0.000 claims description 3
- 239000012956 1-hydroxycyclohexylphenyl-ketone Substances 0.000 claims description 2
- AMIJXNFLZXFHJA-UHFFFAOYSA-N 2-dimethylphosphoryl-1-(2,4,6-trimethylphenyl)ethanone Chemical compound CC1=C(C(=O)CP(C)(C)=O)C(=CC(=C1)C)C AMIJXNFLZXFHJA-UHFFFAOYSA-N 0.000 claims description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 2
- 230000001588 bifunctional effect Effects 0.000 claims description 2
- MQDJYUACMFCOFT-UHFFFAOYSA-N bis[2-(1-hydroxycyclohexyl)phenyl]methanone Chemical compound C=1C=CC=C(C(=O)C=2C(=CC=CC=2)C2(O)CCCCC2)C=1C1(O)CCCCC1 MQDJYUACMFCOFT-UHFFFAOYSA-N 0.000 claims description 2
- 239000012461 cellulose resin Substances 0.000 claims description 2
- 239000011737 fluorine Substances 0.000 claims description 2
- 229910052731 fluorine Inorganic materials 0.000 claims description 2
- 229920006122 polyamide resin Polymers 0.000 claims description 2
- 229920005668 polycarbonate resin Polymers 0.000 claims description 2
- 239000004431 polycarbonate resin Substances 0.000 claims description 2
- 229920005990 polystyrene resin Polymers 0.000 claims description 2
- 239000004800 polyvinyl chloride Substances 0.000 claims description 2
- 239000005033 polyvinylidene chloride Substances 0.000 claims description 2
- 229920001328 Polyvinylidene chloride Polymers 0.000 claims 1
- 125000002573 ethenylidene group Chemical group [*]=C=C([H])[H] 0.000 claims 1
- 239000000853 adhesive Substances 0.000 abstract description 6
- 230000001070 adhesive effect Effects 0.000 abstract description 6
- 238000010521 absorption reaction Methods 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- BAPJBEWLBFYGME-UHFFFAOYSA-N Methyl acrylate Chemical compound COC(=O)C=C BAPJBEWLBFYGME-UHFFFAOYSA-N 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 8
- 230000008901 benefit Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000001029 thermal curing Methods 0.000 description 5
- DPNXHTDWGGVXID-UHFFFAOYSA-N 2-isocyanatoethyl prop-2-enoate Chemical compound C=CC(=O)OCCN=C=O DPNXHTDWGGVXID-UHFFFAOYSA-N 0.000 description 4
- 238000010030 laminating Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical group CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 3
- UKLDJPRMSDWDSL-UHFFFAOYSA-L [dibutyl(dodecanoyloxy)stannyl] dodecanoate Chemical compound CCCCCCCCCCCC(=O)O[Sn](CCCC)(CCCC)OC(=O)CCCCCCCCCCC UKLDJPRMSDWDSL-UHFFFAOYSA-L 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000001723 curing Methods 0.000 description 3
- 230000001747 exhibiting effect Effects 0.000 description 3
- 238000013007 heat curing Methods 0.000 description 3
- IQPQWNKOIGAROB-UHFFFAOYSA-N isocyanate group Chemical group [N-]=C=O IQPQWNKOIGAROB-UHFFFAOYSA-N 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
- 229920002818 (Hydroxyethyl)methacrylate Polymers 0.000 description 2
- KWOLFJPFCHCOCG-UHFFFAOYSA-N Acetophenone Chemical compound CC(=O)C1=CC=CC=C1 KWOLFJPFCHCOCG-UHFFFAOYSA-N 0.000 description 2
- WOBHKFSMXKNTIM-UHFFFAOYSA-N Hydroxyethyl methacrylate Chemical compound CC(=C)C(=O)OCCO WOBHKFSMXKNTIM-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000007334 copolymerization reaction Methods 0.000 description 2
- 239000012975 dibutyltin dilaurate Substances 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- MSLCOWHBLCTBOW-UHFFFAOYSA-N hex-5-ene-2,4-dione Chemical compound CC(=O)CC(=O)C=C MSLCOWHBLCTBOW-UHFFFAOYSA-N 0.000 description 2
- RBQRWNWVPQDTJJ-UHFFFAOYSA-N methacryloyloxyethyl isocyanate Chemical compound CC(=C)C(=O)OCCN=C=O RBQRWNWVPQDTJJ-UHFFFAOYSA-N 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000001603 reducing effect Effects 0.000 description 2
- 125000006176 2-ethylbutyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(C([H])([H])*)C([H])([H])C([H])([H])[H] 0.000 description 1
- GAWIXWVDTYZWAW-UHFFFAOYSA-N C[CH]O Chemical group C[CH]O GAWIXWVDTYZWAW-UHFFFAOYSA-N 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
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- 230000032683 aging Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 125000003438 dodecyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 229920000126 latex Polymers 0.000 description 1
- 239000004816 latex Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 125000001421 myristyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
- C09J7/29—Laminated material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B27/08—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
- C09J133/04—Homopolymers or copolymers of esters
- C09J133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
- C09J133/08—Homopolymers or copolymers of acrylic acid esters
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
- C09J133/04—Homopolymers or copolymers of esters
- C09J133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
- C09J133/10—Homopolymers or copolymers of methacrylic acid esters
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
- C09J133/04—Homopolymers or copolymers of esters
- C09J133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
- C09J133/10—Homopolymers or copolymers of methacrylic acid esters
- C09J133/12—Homopolymers or copolymers of methyl methacrylate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02304—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment formation of intermediate layers, e.g. buffer layers, layers to improve adhesion, lattice match or diffusion barriers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
- H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
- H01L2924/3512—Cracking
- H01L2924/35121—Peeling or delaminating
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Adhesive Tapes (AREA)
Abstract
And a base layer, an intermediate layer, and an adhesive layer, wherein the adhesive layer is a photocurable thermosetting adhesive layer including a photoinitiator, and the weight ratio of the photoinitiator to the total weight of the adhesive layer is 1000 ppm to 3000 ppm. It provides an adhesive film.
In addition, preparing an intermediate layer disposed on one surface of the base layer; Preparing a pressure-sensitive adhesive composition comprising a thermosetting resin having a photocurable functional group, a thermosetting agent, and a photoinitiator; And preparing a thermosetting adhesive layer having a weight ratio of the photoinitiator to 1000 ppm to 3000 ppm based on the total weight of the adhesive layer by applying the adhesive composition to one surface of the intermediate layer and thermosetting. Provide a method.
Description
The present invention relates to a pressure-sensitive adhesive film and a method for producing the same, which adhere to the surface of the semiconductor wafer when it is necessary to protect the surface in processing the semiconductor wafer.
Recently, miniaturization and weight reduction of electronic products have been rapidly progressed, and accordingly, demands for leadlessness, thinning, and high integration of semiconductor packages are increasing. In response to this demand, the demand for large diameter and thinning of the wafer included in the semiconductor package is also increasing.
However, along with the progress of large diameters, wafer damage such as wafer contamination and cracking occurs frequently during the backgrinding process, and thus, the role of the adhesive film for protecting the semiconductor wafer surface becomes more important.
In addition, the adhesive film used in the processing of the semiconductor wafer should be peeled off after the processing is completed, and should be peeled off without damaging the semiconductor surface without leaving a residue during peeling.
One embodiment of the present invention provides a pressure-sensitive adhesive film for protecting the semiconductor wafer surface can implement a rapid peeling force even for a small amount of light energy.
Another embodiment of the present invention provides a method of manufacturing a pressure-sensitive adhesive film for protecting the semiconductor wafer surface, which can be controlled to implement a sudden peel force reduction characteristics even for a small amount of light energy of the components and physical properties of the adhesive layer in the manufacturing process.
In one embodiment of the present invention, comprising a base layer, an intermediate layer and an adhesive layer, wherein the adhesive layer is a further photocurable thermosetting adhesive layer including a photoinitiator, the weight ratio of the photoinitiator to the total weight of the adhesive layer is Provided is an adhesive film for protecting a semiconductor wafer surface from 1000 ppm to 3000 ppm.
In another embodiment of the present invention, preparing an intermediate layer disposed on one surface of the substrate layer; Preparing a pressure-sensitive adhesive composition comprising a thermosetting resin having a photocurable functional group, a thermosetting agent, and a photoinitiator; And preparing a pressure-sensitive adhesive layer including a thermoset of the pressure-sensitive adhesive composition on one surface of the intermediate layer, wherein the weight ratio of the photoinitiator to the total weight of the pressure-sensitive adhesive layer is about 1000 ppm to 3000 ppm. Provide a method.
The pressure-sensitive adhesive film for protecting the semiconductor wafer surface exhibits a rapid peeling force drop rate even under photocuring conditions by a small amount of light energy irradiation because the adhesive layer contains a photoinitiator in a predetermined amount, and peels without damaging the surface of the semiconductor wafer. A peelable effect can be realized without leaving a residue.
In addition, the pressure-sensitive adhesive layer for implementing the above advantageous properties from the pressure-sensitive adhesive composition can be efficiently produced through the method of manufacturing the pressure-sensitive adhesive film for protecting the semiconductor wafer surface.
1 is a schematic cross-sectional view of an adhesive film for protecting a semiconductor wafer surface according to an embodiment of the present invention.
Advantages and features of the present invention, and methods for achieving the same will be apparent with reference to the following embodiments. However, the present invention is not limited to the embodiments disclosed below, but may be implemented in various forms. The present embodiments are merely provided to make the disclosure of the present invention complete, and to fully convey the scope of the invention to those skilled in the art, and the present invention is defined by the scope of the claims. It will be. Like reference numerals refer to like elements throughout.
In the drawings, the thickness of layers, films, panels, regions, etc., are exaggerated for clarity. In the drawings, the thicknesses of layers and regions are exaggerated for clarity.
In one embodiment of the present invention, comprising a base layer, an intermediate layer and an adhesive layer, wherein the adhesive layer is a further photocurable thermosetting adhesive layer including a photoinitiator, the weight ratio of the photoinitiator to the total weight of the adhesive layer is An adhesive film for protecting a semiconductor wafer surface from about 1000 ppm to about 3000 ppm is provided.
1 is a schematic cross-sectional view of an adhesive film for protecting a semiconductor wafer surface according to an embodiment of the present invention.
Referring to FIG. 1, the
Specifically, when the adhesive film is used in the backgrinding process of the wafer having a structure having a step of about 30 μm to about 100 μm on the surface through a structure including a base layer, an intermediate layer, and an adhesive layer, It can have the advantage of being attached well while absorbing the step effectively.
Each thickness of the substrate layer, the intermediate layer, and the adhesive layer is not particularly limited as it can be adjusted according to the use, but for example, the adhesive film has a structure having a step of about 30 μm to about 100 μm, such as a bump. When applied to the surface of the disposed wafer, the
The thickness of the
The adhesive film protecting the surface of the semiconductor wafer serves to prevent damage to the circuit pattern or the like present on the surface of the semiconductor wafer, or contamination of the wafer by foreign substances or chemicals generated during the process. . The adhesive film should be removed after the precision processing of the semiconductor wafer is completed, and it is important to remove the adhesive film without damaging the surface of the wafer and without peeling residue.
In one embodiment, the adhesive film may include an additional photocurable adhesive layer including a photoinitiator, thereby rapidly lowering the adhesive force through additional photocuring after the wafer processing is completed, and a small amount of light in the additional photocuring. In spite of the energy irradiation, it has the advantage of exhibiting radical peel force lowering characteristics.
The pressure-sensitive adhesive layer is a thermosetting pressure-sensitive adhesive layer is formed by heat curing at a constant temperature and time conditions. Usually, in the case of a thermosetting adhesive layer, the photoinitiator contained in the raw material adhesive composition was damaged in the process of thermosetting at high temperature, and there existed a problem which remained hard.
In one embodiment of the present invention, the adhesive layer has a weight ratio of the photoinitiator to its total weight of about 1000ppm to about 3000ppm. For example, the weight ratio of the photoinitiator may be about 1000 ppm to about 2000 ppm. Since the pressure-sensitive adhesive layer contains a photoinitiator in the content of the above range even after the thermosetting from the raw material pressure-sensitive adhesive composition can be obtained an advantage that the sudden peel force is reduced by the light energy of a small amount of light after the semiconductor process is completed. When the content of the photoinitiator is less than the above range, it is difficult to secure additional physical properties indicating a sudden decrease in peeling force due to further photocuring by a small amount of light energy. When the photoinitiator exceeds the above range, a large amount of photoinitiator remains in the pressure-sensitive adhesive layer. Due to this, the aging stability of the adhesive layer may be lowered.
The adhesive layer should be firmly attached to the wafer surface during the processing of the wafer, such as backgrinding, and for this purpose, it should exhibit a certain level of peeling force on the wafer surface. Specifically, the peeling force of the adhesive layer on the wafer surface may be about 500g / 25mm or more, for example, about 500g / 25mm to about 1500g / 25mm, for example, about 800g / 25mm to about 1200g It can be / 25mm. The adhesive layer can be firmly attached during processing of the wafer surface by having the peeling force in the above range, so that it can perform the function of surface protection well, and at the time of additional photocuring, a predetermined reduction in the peeling force is reduced based on the peeling force in the above range. The adhesive film can be removed well without damaging or peeling residue of the wafer surface.
The adhesive layer may have a peeling force reduction rate of about 90% or more according to the following Equation 1 at the time of further photocuring by light energy of about 0.3J to about 1J, for example, the peeling force reduction rate is about 90% to about 95%, for example, from about 93% to about 95%.
[Equation 1]
Peel force reduction rate (%) = (X-Y) / X × 100
In Formula 1, X is the peel force of the pressure-sensitive adhesive layer before further photocuring, and Y is the peel force of the pressure-sensitive adhesive layer after further photocuring.
When the pressure-sensitive adhesive layer exhibits a peeling force reduction rate in the above range at the time of additional photocuring according to the light energy of the small amount of light in the above-described range, the energy efficiency of the process of removing the pressure-sensitive adhesive film can be improved, and light irradiation at the time of photocuring Damage to the wafer surface or damage to the wafer surface upon removal of the adhesive film can be prevented.
The pressure-sensitive adhesive layer is an additional photocurable thermosetting adhesive layer, and includes a thermosetting of the pressure-sensitive adhesive composition, and specifically, the pressure-sensitive adhesive composition may include a thermosetting resin, a thermosetting agent, and a photoinitiator having a photocurable functional group.
The thermosetting resin having a photocurable functional group is a resin capable of both thermosetting and photocuring of its chemical structure, and specifically, includes an alkyl (meth) acrylate having 1 to 15 carbon atoms and a hydroxy group-containing (meth) acrylate. Main chains wherein the mixed monomer components are polymerized or copolymerized; And a side chain in which an isocyanate compound having an acryloyl group at the terminal is chemically bonded to the main chain.
More specifically, the thermosetting resin having the photocurable functional group includes a structural unit derived from a hydroxy group-containing (meth) acrylate in the main chain, thereby having a hydroxy group. The isocyanate group of the isocyanate compound having an acryloyl group at the terminal may be chemically reacted with at least a portion of the hydroxyl group in the main chain of the resin to be bonded to form a side chain.
For example, the isocyanate compound may react with about 85 mol% to about 95 mol% of hydroxy groups in 100 mol% of the total hydroxy groups in the main chain of the resin to form a side chain.
The isocyanate compound having an acryloyl group for forming the side chain may include one selected from the group consisting of acryloyloxyethyl isocyanate (AOI), methacryloyloxyethyl isocyanate (MOI), and combinations thereof.
The alkyl (meth) acrylate forming the main chain is an acrylate compound having a linear or crushed alkyl group having 1 to 15 carbon atoms, for example, methyl (meth) acrylate, ethyl (meth) acrylate, n-propyl (Meth) acrylate, isopropyl (meth) acrylate, n-butyl (meth) acrylate, sec-butyl (meth) acrylate, pentyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, 2 -Ethylbutyl (meth) acrylate, n-octyl (meth) acrylate, isooctyl (meth) acrylate, isononyl (meth) acrylate, lauryl (meth) acrylate, tetradecyl (meth) acrylate and It may include one selected from the group consisting of a combination thereof.
The hydroxy group-containing (meth) acrylate may be hydroxyethyl (meth) acrylate, hydroxypropyl (meth) acrylate, hydroxybutyl (meth) acrylate, hydroxypentyl (meth) acrylate, or hydroxyhexyl. It may include one selected from the group consisting of (meth) acrylate, hydroxyoctyl (meth) acrylate, hydroxydecyl (meth) acrylate, and combinations thereof.
In one embodiment, the mixed monomer component for forming the main chain of the resin comprises about 70 to about 90 parts by weight of alkyl (meth) acrylate having 1 to 15 carbon atoms; About 10 to 30 parts by weight of the hydroxy group-containing (meth) acrylate may be included.
The main chain is formed by polymerization or copolymerization of a specific (meth) acrylate compound of the aforementioned kind, so that a chemical bond with the isocyanate compound for side chain formation can be easily formed when considering the positional relationship and reactivity, and By forming the main chain having a chain of length can achieve a desired level of adhesion and a reduction in peel force.
In addition, the main chain may impart appropriate thermosetting to the pressure-sensitive adhesive composition. That is, the hydroxyl group remaining in the hydroxy group existing in the main chain without chemically reacting with the isocyanate compound may perform a thermosetting function.
That is, as described above, the isocyanate compound may react with about 85 mol% to about 95 mol% of hydroxyl groups in 100 mol% of the total hydroxy groups in the main chain of the resin to form a side chain, thereby remaining unreacted. From about 5 mole percent to about 15 mole percent of hydroxy groups may perform the thermosetting function. As a result, the resin can be appropriately cured by thermal energy that does not damage the photoinitiator, and it is possible to easily secure additional photocurable properties.
The side chain imparts photocurability to the resin. The side chain may be formed by chemically bonding the above-described specific compound to the main chain, thereby providing a free-acryloyloxy group after thermal curing, thereby exhibiting further photocurable properties. Can be.
The thermosetting resin having a photocurable functional group may have a weight average molecular weight (Mw) of about 300,000 g / mol to about 1.5 million g / mol, for example, about 500,000 g / mol to about 1 million g / mol Can be. Since the resin has a weight average molecular weight (Mw) in the above range, the pressure-sensitive adhesive composition can secure an appropriate viscosity, and ensure uniform coating property when the pressure-sensitive adhesive layer is formed in the manufacturing process of the pressure-sensitive adhesive film for protecting the semiconductor wafer surface. can do. In addition, the resin having a weight average molecular weight (Mw) in the above range can be thermoset to form an adhesive layer having the required level of adhesion.
The pressure-sensitive adhesive composition includes a thermosetting agent, and the thermosetting agent performs a crosslinking reaction with the thermosetting functional group of the resin so that the pressure-sensitive adhesive layer exhibits an appropriate peel force.
Specifically, the thermosetting agent may include a bifunctional to six functional isocyanate compound. By using the compound having an isocyanate functional group in the above range as a thermosetting agent, it is possible to obtain an advantage that it is easy to handle and that the rate of curing by reacting with the resin is high.
The pressure-sensitive adhesive composition may include about 0.5 to about 5 parts by weight of the thermosetting agent, and may include about 1 to about 3 parts by weight, based on 100 parts by weight of the thermosetting resin having the photocurable functional group. The pressure-sensitive adhesive composition may form a thermosetting pressure-sensitive adhesive layer having an appropriate gel content during thermal curing through the heat curing agent in the above range. When the content of the thermosetting agent exceeds the above range, the thermosetting adhesive layer may be excessively hard, thereby deteriorating bump absorption performance.
The pressure-sensitive adhesive composition includes a photoinitiator, and the photoinitiator serves to initiate photocuring of the resin upon additional photocuring of the thermosetting adhesive layer. The photoinitiator should be stored in the adhesive layer without being damaged or lost when the adhesive composition is thermally cured to form the thermosetting adhesive layer. For example, 2,2-dimethoxy-2-phenylacetophenone, 1 -Hydroxycyclohexylphenylketone, 2,4,6-trimethyl-benzoyl-trimethyl phosphine oxide, and combinations thereof. The photoinitiator of this kind is particularly resistant to heat, and thus may have high shelf life at the time of thermosetting the pressure-sensitive adhesive composition, and may further reduce the peeling force at a required level by advancing the photocuring reaction of the resin with high efficiency upon further photocuring. have.
The pressure-sensitive adhesive composition may include about 1 to about 15 parts by weight of the photoinitiator, for example, about 5 to about 10 parts by weight based on 100 parts by weight of the thermosetting resin having the photocurable functional group. The pressure-sensitive adhesive composition may have an advantage that the photoinitiator is not damaged or lost during thermal curing, even though it contains a small amount of photoinitiator by containing the photoinitiator in the above-described content, and a suitable range of photoinitiators in the thermosetting adhesive layer By remaining, it is possible to obtain the advantage of obtaining the required level of peeling force reduction effect by further photocuring.
The pressure-sensitive adhesive composition may further include a catalyst or a curing retardant as an additive. The catalyst serves to increase the thermal curing rate, specifically, may include dibutyltin dilaurate (DBTDL, Dibutyltin dilaurate). In addition, the curing retardant serves to ensure stability after the formulation of the pressure-sensitive adhesive composition, for example, may include acrylacetone (acrylacetone).
Referring to FIG. 1, the adhesive film for protecting the semiconductor wafer surface includes a
The
The
The
For example, the (meth) acrylic acid ester monomer for forming the partial polymer is ethylhexyl acrylate (EHA), isobornyl acrylate (IBOA), methyl acrylate (MA), hydroxyethyl methacrylate (HEA) It may include one selected from the group consisting of isostearyl acrylate (ISTA) and combinations thereof.
In one embodiment, the monomer component comprises about 40 to about 60 parts by weight of ethylhexylacrylate (EHA); About 10 to about 20 parts by weight of isobornyl acrylate (IBOA); About 10 to about 20 parts by weight of isostearyl acrylate (ISTA); The hydroxyethyl acrylate (HEA) may comprise about 10 to about 30 parts by weight. In this case, the intermediate layer may implement excellent step absorption performance, and may be attached to the base layer and the adhesive layer with an appropriate adhesive force, thereby contributing to securing durability of the adhesive film itself.
The partial polymer of the (meth) acrylic acid ester monomer includes a polymer or copolymer formed by polymerizing about 5% by weight to about 30% by weight of a monomer based on the total weight of the monomer component. That is, the partial polymer may include both the polymer or copolymer and the monomer.
By monomer polymerization of the above range relative to the total weight of the monomer component to form a polymer or copolymer partially, the composition for forming an interlayer comprising the partial polymer can ensure an appropriate viscosity, and in the process of applying the composition Excellent coating properties can be secured. In addition, the composition for forming the intermediate layer may be photocured to implement excellent step absorption performance.
The intermediate layer is a photocured product of the composition for forming the intermediate layer, the composition for forming the intermediate layer may further include one selected from the group consisting of a photoinitiator, a photocuring agent and combinations thereof with the partial polymer.
The photoinitiator may be used without particular limitation so long as it can initiate the photocuring reaction of the partial polymer.
The photocuring agent is 1,4-butanedioldi (meth) acrylate, 1,6-hexanedioldi (meth) acrylate, neopentylglycoldi (meth) acrylate, 1,2-ethylene glycoldi (meth) acrylic It may include, but is not limited to, one selected from the group consisting of latex, polyethylene glycol di (meth) acrylate, 1,12-dodecanedioldi (meth) acrylate, and combinations thereof.
In another embodiment of the present invention, preparing an intermediate layer disposed on one surface of the substrate layer; Preparing a pressure-sensitive adhesive composition comprising a thermosetting resin having a photocurable functional group, a thermosetting agent, and a photoinitiator; And preparing a pressure-sensitive adhesive layer including a thermoset of the pressure-sensitive adhesive composition on one surface of the intermediate layer, wherein the weight ratio of the photoinitiator to the total weight of the pressure-sensitive adhesive layer is about 1000 ppm to 3000 ppm. Provide a method.
More specifically, the step of preparing the intermediate layer disposed on one surface of the base layer, the step of applying a composition for forming the intermediate layer on a separate release film and then photocuring to prepare a laminate of the intermediate layer and the release film; And laminating the intermediate layer of the laminate to abut on one surface of the substrate layer, and then peeling off the release film.
In addition, the step of preparing an adhesive layer on one surface of the intermediate layer may be formed by applying the pressure-sensitive adhesive composition on a separate release film and then thermosetting to form a pressure-sensitive adhesive layer having a weight ratio of about 1000 ppm to 3000 ppm of the photoinitiator; And laminating the adhesive layer to be in contact with one surface of the intermediate layer.
As such, the intermediate layer and the adhesive layer may be separately formed on the release film, and then the adhesive film is manufactured by the method of sequentially laminating the interface and the surface properties of the respective layers to suit the semiconductor process.
In the manufacturing method of the said adhesive film, the thing regarding the said base material layer and an intermediate | middle layer is as above-mentioned, and the matter regarding the said intermediate | middle layer formation composition is also the same as mentioned above.
The method for preparing the pressure-sensitive adhesive film includes preparing a pressure-sensitive adhesive composition including a thermosetting resin, a thermosetting agent, and a photoinitiator having a photocurable functional group. Matters regarding the thermosetting resin, the thermosetting agent, and the photoinitiator having the photocurable functional group are as described above.
In this case, the pressure-sensitive adhesive composition may include about 1 part by weight to about 15 parts by weight of the photoinitiator, for example, about 5 parts by weight to 12 parts by weight with respect to 100 parts by weight of the thermosetting resin having the photocurable functional group. have. Since the pressure-sensitive adhesive composition contains a photoinitiator in the content of the above range, it is easy to retain a desired amount of photoinitiator after thermal curing, whereby the thermosetting adhesive layer may realize excellent peeling force reduction performance by additional photocuring.
The viscosity of the pressure-sensitive adhesive composition may be about 300cps to about 3000cps. The pressure-sensitive adhesive composition may include the above-described components in order to achieve the desired effect in one embodiment, by controlling the viscosity in the above-described range can also be implemented with excellent coating properties when applying it to one surface of the intermediate layer.
When the pressure-sensitive adhesive composition is thermoset to prepare a pressure-sensitive adhesive layer, the pressure-sensitive adhesive layer is prepared such that the weight ratio of the photoinitiator to its total weight is about 1000 ppm to about 3000 ppm. The adhesive layer may be further photocurable by containing a photoinitiator in the content of the above range, it may exhibit a rapid peeling force reduction effect by additional photocuring.
Specifically, the pressure-sensitive adhesive composition, as described above, by appropriately controlling the type and content ratio of each component, and by appropriately setting the thermosetting conditions, the content of the photoinitiator in the final pressure-sensitive adhesive layer may satisfy the above range.
Specifically, the thermosetting of the pressure-sensitive adhesive composition may be performed for about 60 seconds to about 200 seconds at about 60 ℃ to about 130 ℃. By heat-curing the pressure-sensitive adhesive composition at the temperature and time in the above range, it is possible to prevent the loss and damage of the photoinitiator, and further thermosetting pressure-sensitive adhesive layer exhibiting an excellent peeling force reducing effect can be obtained.
The adhesive layer should be firmly attached to the wafer surface during the processing of the wafer, such as backgrinding, and for this purpose, it should exhibit a certain level of peeling force on the wafer surface. Specifically, the peeling force of the adhesive layer on the wafer surface may be about 500g / 25mm or more, for example, about 500g / 25mm to about 1500g / 25mm, for example, about 800g / 25mm to about 1200g It can be / 25mm. By having the peel force in the above range, it can be firmly attached during the processing of the wafer surface to perform the function of surface protection well, and exhibits a predetermined decrease in the peel force based on the peel force in the above range upon further photocuring, The adhesive film can be removed well without damage or peeling residue.
The pressure-sensitive adhesive layer prepared by the manufacturing method may have a peel force reduction rate of about 80% or more according to Equation 1 below when additional photocuring by light energy of about 300mJ to about 1000mJ, for example, the peeling force decrease rate is about 90% to about 95%, for example, about 93% to about 95%.
[Equation 1]
Peel force reduction rate (%) = (X-Y) / X × 100
In Formula 1, X is the peel force of the pressure-sensitive adhesive layer before further photocuring, and Y is the peel force of the pressure-sensitive adhesive layer after further photocuring.
When the pressure-sensitive adhesive layer exhibits a peeling force reduction rate in the above range at the time of additional photocuring according to the light energy of the small amount of light in the above-described range, the energy efficiency of the process of removing the pressure-sensitive adhesive film can be improved, and light irradiation at the time of photocuring Damage to the wafer surface or damage to the wafer surface upon removal of the adhesive film can be prevented.
The following presents specific embodiments of the present invention. However, the embodiments described below are merely for illustrating or explaining the present invention in detail, and thus the present invention is not limited thereto.
<
EXAMPLE
And
Comparative example
>
EXAMPLE One
A composition for forming an intermediate layer was applied on an upper part of a release film made of polyethylene terephthalate (PET), and photocured by irradiating light energy of 1000 mJ to prepare an intermediate layer having a thickness of 100 μm to prepare a laminate of the release film and the intermediate layer. The intermediate layer forming composition is 50 parts by weight of ethylhexyl acrylate (EHA), 15 parts by weight of isobornyl acrylate (IBOA), 15 parts by weight of isostearyl acrylate (ISTA) and hydroxyethyl methacrylate (HEA) 20 10 parts by weight of the total mixed monomer component including parts by weight includes a partial polymer comprising a copolymer formed by copolymerization, and 0.5 parts by weight of acetophenone-based photoinitiator relative to 100 parts by weight of the partial polymer. A 120 μm-thick polyethylene (PE) resin film was prepared as the base material layer, and the upper layer was laminated so that the intermediate layer of the laminate abuts, and the release film was peeled off.
Meanwhile, a copolymer of a monomer component including 54 parts by weight of ethylhexyl acrylate (EHA), 23 parts by weight of methyl acrylate (MA), and 23 parts by weight of hydroxyethyl acrylate (HEA) was prepared, and the
To 100 parts by weight of the thermosetting resin having the photocurable functional group, 3 parts by weight of a 6 functional isocyanate compound is mixed as a thermosetting agent, 10 parts by weight of 2,2-dimethoxy-2-phenylacetophenone is mixed as a photoinitiator and cured. An adhesive composition was prepared by mixing 1 part by weight of acryllacetone as a retardant.
By applying the pressure-sensitive adhesive composition on the release film of polyethylene terephthalate (PET) material and thermosetting at 90 ℃ for 180 seconds to form a 10㎛ thick adhesive layer having a weight ratio of the photoinitiator 1008ppm to the total weight of the adhesive layer , A laminate of a release film and an adhesive layer was prepared. An adhesive film including a substrate layer, an intermediate layer, and an adhesive layer was manufactured by laminating a laminate so that the adhesive layer abuts on the intermediate layer and peeling off a release film.
EXAMPLE 2
The pressure-sensitive adhesive composition was thermally cured at 90 ° C. for 120 seconds, and the pressure-sensitive adhesive layer was bonded in the same manner as in Example 1 except that a 10 μm-thick pressure-sensitive adhesive layer having a weight ratio of the photoinitiator was 1681 ppm to the total weight of the pressure-sensitive adhesive layer. A film was prepared.
EXAMPLE 3
The pressure-sensitive adhesive composition was thermally cured at 110 ° C. for 120 seconds, and a pressure-sensitive adhesive layer having a 10 μm-thick adhesive layer having a weight ratio of 1018 ppm to the total weight of the adhesive layer was prepared in the same manner as in Example 1 above. A film was prepared.
EXAMPLE 4
The pressure-sensitive adhesive composition comprises 5 parts by weight of 2,2-dimethoxy-2-phenylacetophenone photoinitiator based on 100 parts by weight of the thermosetting resin having the photocurable functional group, the pressure-sensitive adhesive composition by thermosetting at 110 ℃ for 120 seconds The pressure-sensitive adhesive film was manufactured in the same manner as in Example 1, except that a 20 μm-thick adhesive layer having a weight ratio of the photoinitiator was 2331 ppm with respect to the total weight of the adhesive layer.
Comparative example One
The pressure-sensitive adhesive composition was thermally cured at 110 ° C. for 180 seconds, and a pressure-sensitive adhesive layer having a thickness of 10 μm having a weight ratio of 823 ppm to the total weight of the pressure-sensitive adhesive layer was prepared in the same manner as in Example 1 above. A film was prepared.
Comparative example 2
The pressure-sensitive adhesive composition was thermally cured at 110 ° C. for 300 seconds, and a pressure-sensitive adhesive layer having a thickness of 20 μm having a weight ratio of 723 ppm to the total weight of the pressure-sensitive adhesive layer was prepared in the same manner as in Example 1 above. A film was prepared.
<Evaluation>
Experimental Example One: Peel force And Peel force Measurement of reduction rate
The peel force (X) before further photocuring was measured about each adhesion layer of the said Example and a comparative example. Subsequently, the adhesive layer was further photocured with a light energy of 0.5 J, and the peel force (Y) after photocuring was measured. Then, the peel force reduction rate by the following formula 1 was derived. The peel force (X, Y) was measured by the method of ASTM D330 by a peel force measuring instrument (Texture analyzer). The results are as described in Table 1 below.
[Equation 1]
Peel force reduction rate (%) = (X-Y) / X × 100
Experimental Example 2: Step Evaluation of Absorption Performance
For each of the adhesive films of Examples and Comparative Examples, the bumps of a cylindrical shape having a height of 50 µm and a diameter of 50 µm in cross section were attached onto the patterned wafer and observed with a microscope to observe the bumps. Was expressed as a percentage of the volume absorbed by the adhesive film to evaluate the stepped absorption performance. Specifically, when the level of absorption is 100% to 80% by volume, 'excellent', 70% to 75% by volume was evaluated as 'poor', and 50% or less was evaluated as 'impossible'. The results are as described in Table 1 below.
Referring to the results of Table 1, it can be seen that the adhesive film of Examples 1 to 4, in which the weight ratio of the photoinitiator of the thermosetting adhesive layer corresponds to 1000 ppm to 3000 ppm, has a higher peeling force reducing effect than Comparative Examples 1 to 2. In this way, it was confirmed that the material had a physical property that was easily peeled off without residues without damaging the surface of the semiconductor wafer.
100: adhesive film
10: base material layer
20: middle layer
30: adhesive layer
Claims (14)
The adhesive layer is an additional photocurable thermosetting adhesive layer including a photoinitiator,
The weight ratio of the photoinitiator to the total weight of the adhesive layer is 1000ppm to 3000ppm,
The intermediate layer is a photocured product of the intermediate layer forming composition containing a partial polymer of the monomer component,
The monomer component is 40 to 60 parts by weight of ethylhexyl acrylate; 10 parts by weight to 20 parts by weight of isobornyl acrylate; 10 to 20 parts by weight of isostearyl acrylate; And 10 parts by weight to 30 parts by weight of hydroxyethyl acrylate.
Adhesive film for semiconductor wafer surface protection.
The adhesive layer has a peel force of 500 g / 25 mm to 1500 g / 25 mm on the wafer surface.
Adhesive film for semiconductor wafer surface protection.
The adhesive layer has a peeling force reduction rate of 90% or more according to Equation 1 according to additional photocuring by 0.3J to 1J light energy.
Adhesive film for semiconductor wafer surface protection:
[Equation 1]
Peel force reduction rate (%) = (X-Y) / X × 100
In Formula 1, X is a peel force of the pressure-sensitive adhesive layer before the additional photocuring, Y is a peel force of the pressure-sensitive adhesive layer after the additional photocuring.
The pressure-sensitive adhesive layer includes a thermosetting resin of the pressure-sensitive adhesive composition comprising a thermosetting resin, a thermosetting agent and a photoinitiator having a photocurable functional group
Adhesive film for semiconductor wafer surface protection.
Thermosetting resin having the photocurable functional group,
A main chain which is a polymer or copolymer of a mixed monomer component comprising an alkyl (meth) acrylate having 1 to 15 carbon atoms and a hydroxy group-containing (meth) acrylate; And
Isocyanate compound having an acryloyl group at the terminal is a side chain chemically bonded to the main chain; including
Adhesive film for semiconductor wafer surface protection.
The thermosetting resin having a photocurable functional group has a weight average molecular weight (Mw) of 300,000 g / mol to 1.5 million g / mol
Adhesive film for semiconductor wafer surface protection.
The thermosetting agent includes a bifunctional to 6 functional isocyanate compound
Adhesive film for semiconductor wafer surface protection.
The photoinitiator is selected from the group consisting of 2,2-dimethoxy-2-phenylacetophenone, 1-hydroxycyclohexylphenyl ketone, 2,4,6-trimethyl-benzoyl-trimethyl phosphine oxide and combinations thereof Containing
Adhesive film for semiconductor wafer surface protection.
The pressure-sensitive adhesive composition includes 0.5 to 5 parts by weight of the thermosetting agent based on 100 parts by weight of the thermosetting resin having the photocurable functional group.
Adhesive film for semiconductor wafer surface protection.
The pressure-sensitive adhesive composition includes 1 to 15 parts by weight of the photoinitiator based on 100 parts by weight of the thermosetting resin having the photocurable functional group.
Adhesive film for semiconductor wafer surface protection.
The base layer is polyethylene terephthalate (PET) resin, polyethylene (PE) resin, polypropylene (PP) resin, polyimide (PI) resin, polyether ether ketone (PEEK) resin, polyvinyl chloride (PVC) resin polychloride At least one selected from the group consisting of vinylidene (PVDC) resin, polyamide resin, polystyrene resin, polycarbonate resin, fluorine resin, cellulose resin, and combinations thereof
Adhesive film for semiconductor wafer surface protection.
Preparing a pressure-sensitive adhesive composition comprising a thermosetting resin having a photocurable functional group, a thermosetting agent, and a photoinitiator; And
It includes a step of preparing a pressure-sensitive adhesive layer comprising a thermoset of the pressure-sensitive adhesive composition on one surface of the intermediate layer, the weight ratio of the photoinitiator to the total weight of the pressure-sensitive adhesive layer 1000ppm to 3000ppm;
The intermediate layer is a photocured product of the intermediate layer forming composition containing a partial polymer of the monomer component,
The monomer component is 40 to 60 parts by weight of ethylhexyl acrylate; 10 parts by weight to 20 parts by weight of isobornyl acrylate; 10 to 20 parts by weight of isostearyl acrylate; And 10 parts by weight to 30 parts by weight of hydroxyethyl acrylate.
The manufacturing method of the adhesive film for semiconductor wafer surface protections.
The thermosetting of the pressure-sensitive adhesive composition is the pressure-sensitive adhesive composition is carried out at 60 ℃ to 130 ℃ 60 seconds to 200 seconds
The manufacturing method of the adhesive film for semiconductor wafer surface protections.
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