CN106098897B - A kind of modified method for preparing high-heat-dispersion LED substrate of discarded straight chain silica gel - Google Patents
A kind of modified method for preparing high-heat-dispersion LED substrate of discarded straight chain silica gel Download PDFInfo
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- CN106098897B CN106098897B CN201610484365.5A CN201610484365A CN106098897B CN 106098897 B CN106098897 B CN 106098897B CN 201610484365 A CN201610484365 A CN 201610484365A CN 106098897 B CN106098897 B CN 106098897B
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- 239000000758 substrate Substances 0.000 title claims abstract description 26
- 239000006185 dispersion Substances 0.000 title claims abstract description 14
- 238000000034 method Methods 0.000 title claims abstract description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 5
- 239000000741 silica gel Substances 0.000 title claims abstract description 5
- 229910002027 silica gel Inorganic materials 0.000 title claims abstract description 5
- 238000003825 pressing Methods 0.000 claims abstract description 24
- 238000002360 preparation method Methods 0.000 claims abstract description 22
- 239000000843 powder Substances 0.000 claims abstract description 20
- 238000000498 ball milling Methods 0.000 claims abstract description 14
- 239000006166 lysate Substances 0.000 claims abstract description 14
- 229920002379 silicone rubber Polymers 0.000 claims abstract description 14
- 229920001617 Vinyon Polymers 0.000 claims abstract description 11
- 229910001369 Brass Inorganic materials 0.000 claims abstract description 8
- 239000010951 brass Substances 0.000 claims abstract description 8
- 238000001035 drying Methods 0.000 claims abstract description 8
- 125000004836 hexamethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[*:1] 0.000 claims abstract description 8
- 239000004372 Polyvinyl alcohol Substances 0.000 claims abstract description 7
- 229920002451 polyvinyl alcohol Polymers 0.000 claims abstract description 7
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 18
- 238000002156 mixing Methods 0.000 claims description 13
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 12
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 claims description 12
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 12
- 238000001354 calcination Methods 0.000 claims description 12
- 239000007789 gas Substances 0.000 claims description 10
- 239000011248 coating agent Substances 0.000 claims description 9
- 238000000576 coating method Methods 0.000 claims description 9
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- 150000001298 alcohols Chemical class 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 6
- 239000012300 argon atmosphere Substances 0.000 claims description 6
- 229910000019 calcium carbonate Inorganic materials 0.000 claims description 6
- 229960000935 dehydrated alcohol Drugs 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 6
- 238000007711 solidification Methods 0.000 claims description 6
- 230000008023 solidification Effects 0.000 claims description 6
- 238000010792 warming Methods 0.000 claims description 6
- 239000011787 zinc oxide Substances 0.000 claims description 6
- 230000007717 exclusion Effects 0.000 claims description 2
- 239000004698 Polyethylene Substances 0.000 claims 1
- 239000004033 plastic Substances 0.000 claims 1
- 229920003023 plastic Polymers 0.000 claims 1
- -1 polyethylene Polymers 0.000 claims 1
- 229920000573 polyethylene Polymers 0.000 claims 1
- 239000000126 substance Substances 0.000 abstract description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052593 corundum Inorganic materials 0.000 abstract description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract description 2
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000005286 illumination Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229920000915 polyvinyl chloride Polymers 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 230000032683 aging Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002085 enols Chemical class 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0075—Processes relating to semiconductor body packages relating to heat extraction or cooling elements
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Battery Electrode And Active Subsutance (AREA)
Abstract
The present invention relates to a kind of modified methods for preparing high-heat-dispersion LED substrate of discarded straight chain silica gel, belong to LED preparation technical field.Discarded straight chain silicon rubber is ground into vinyon mixes fritter first by the present invention, then it is mixed with the lysate that the substances such as hexamethylene are prepared, and obtains mixed and modified colloidal sol, spare, then by Al2O3It after the substances ball milling such as brass powder, is stirred with polyvinyl alcohol, dry-pressing and drying, after obtaining dry dry-pressing blank, then mixed and modified colloidal sol is coated to dry dry-pressing blank, is calcined, high-heat-dispersion LED substrate can be prepared into.LED substrate perfect heat-dissipating prepared by the present invention, the coefficient of heat conduction are 2.0~3.0W/mK；And thermal expansion coefficient is low, effectively improves the performance of device.
Description
Technical field
The present invention relates to a kind of modified methods for preparing high-heat-dispersion LED substrate of discarded straight chain silica gel, belong to LED technology of preparing
Field.
Background technique
LED illumination light source has the advantages such as efficient, energy conservation, long service life, in today of energy shortage, studies LED and shines
It is bright that there is far-reaching strategic importance.Currently, enough luminous fluxes cannot be generated using single-chip package since LED power is limited
To meet requirement of the people to display and illumination.In series and parallel it is one group by multiple chips (6 or more), and is encapsulated as device, at
For a kind of trend of LED component development.
Single led chip can only nearly 20% electric energy be converted into luminous energy, and nearly 80% electric energy is converted into heat, also
It is that multi-chip-package device quantity of heat production will increase.Heat concentrates in small-sized chip not scattering and disappearing, and can reduce device
Can, and faster devices aging.In order to which the effective of heat scatters and disappears, Metal Substrate is mainly taken in high-power (1W or more) LED component
Plate, but since thermal expansion metal coefficient is larger, so that LED component generates biggish thermal stress in use, to device
Performance influences very big；Metal substrate insulating layer is usually high molecular material simultaneously, and thermal conductivity is lower, constrains dissipating for metal substrate
Hot property.
Summary of the invention
The technical problems to be solved by the invention：For the LED substrate being made into using metal substrate, due to thermal expansion metal
Coefficient is big, generates biggish thermal stress, influences device, while metal substrate thermal conductivity is lower, constrains asking for its heat dissipation performance
Topic, provides a kind of be ground into discarded straight chain silicon rubber with vinyon and mixes fritter, then by the substances such as itself and hexamethylene
The lysate of preparation mixes, and obtains mixed and modified colloidal sol, spare, then by Al2O3After the substances ball milling such as brass powder, with poly- second
Enol is mixed, dry-pressing and drying, after obtaining dry dry-pressing blank, then coats mixed and modified colloidal sol to dry dry-pressing blank
On, it is calcined, the method that high-heat-dispersion LED substrate can be prepared into.LED substrate perfect heat-dissipating prepared by the present invention, heat are swollen
Swollen coefficient is low, effectively improves the performance of device.
In order to solve the above technical problems, the present invention is using technical solution as described below：
（1）Discarded straight chain silicon rubber, vinyon are collected, cleans and dries respectively, it is subsequent by dry silicon rubber and poly-
Vinyl plastics one are placed in air-flow crushing, are crushed to the mixing fritter that diameter is 1cm, then according to parts by weight, respectively
60~75 parts of toluene, 15~25 parts of hexamethylenes, 15~20 parts of dehydrated alcohols are chosen, is stirred, is prepared into lysate, then presses
Solid-to-liquid ratio 1:8, the mixing fritter of above-mentioned preparation and lysate are stirred 25~30min, after standing 1~2h, are prepared into mixed
Modification sol is closed, it is spare；
（2）According to parts by weight, 25~45 parts of Al are weighed respectively2O3, 20~25 parts of brass powders, 10~15 parts of calcium carbonate,
10~15 parts of MgO and 15~20 part of zinc oxide are placed in ball mill, using dehydrated alcohol as medium, 4~6h of ball milling；
（3）After the completion of ball milling, collection ball-milled powder, in mass ratio 1:10, polyvinyl alcohol and ball-milled powder are stirred mixed
Close, fill into mold, at room temperature stand 10~15min after, then at 5~10MPa it is dry-pressing formed, then stand 10~
15min places it in dry 1~2h at 65~80 DEG C, is prepared into dry dry-pressing blank；
（4）By step（1）The mixed and modified colloidal sol of preparation is uniformly coated to the drying dry-pressing blank of above-mentioned preparation, is controlled
Coating thickness is 1.5~2.0mm, after the completion of to be coated, stand 1~2h of solidification at room temperature, is prepared into modified blank, then will
Modified blank is placed in tube furnace, and argon gas exclusion air is led to it and is then under an argon atmosphere warming up to by 5 DEG C/min speed
1200~1300 DEG C, 1~2h of calcining at constant temperature, after the completion of calcining, tube furnace is passed through air, cooled to room temperature
It is prepared into high-heat-dispersion LED substrate.
High-heat-dispersion LED substrate bond strength prepared by the present invention is 95N or more, and the coefficient of heat conduction is 2.0~3.0W/m
K。
The present invention is compared with other methods, and advantageous effects are：
（1）LED substrate perfect heat-dissipating prepared by the present invention, the coefficient of heat conduction are 2.0~3.0W/mK；
（2）And thermal expansion coefficient is low, effectively improves the performance of device；
（3）Preparation step of the present invention is simple, required at low cost.
Specific embodiment
Discarded straight chain silicon rubber, vinyon are collected first, are cleaned and are dried respectively, it is subsequent by dry silicon rubber and poly-
Vinyl plastics one are placed in air-flow crushing, are crushed to the mixing fritter that diameter is 1cm, then according to parts by weight, respectively
60~75 parts of toluene, 15~25 parts of hexamethylenes, 15~20 parts of dehydrated alcohols are chosen, is stirred, is prepared into lysate, then presses
Solid-to-liquid ratio 1:8, the mixing fritter of above-mentioned preparation and lysate are stirred 25~30min, after standing 1~2h, are prepared into mixed
Modification sol is closed, it is spare；Again according to parts by weight, 25~45 parts of Al are weighed respectively2O3, 20~25 parts of brass powders, 10~15 parts
Calcium carbonate, 10~15 parts of MgO and 15~20 part of zinc oxide are placed in ball mill, using dehydrated alcohol as medium, 4~6h of ball milling；To
After the completion of ball milling, collection ball-milled powder, in mass ratio 1:10, polyvinyl alcohol and ball-milled powder are stirred, filling to mold
In, at room temperature stand 10~15min after, then at 5~10MPa it is dry-pressing formed, then stand 10~15min, place it in
Dry 1~2h, is prepared into dry dry-pressing blank at 65~80 DEG C；The mixed and modified colloidal sol of preparation is uniformly coated to above-mentioned preparation
Drying dry-pressing blank on, control coating thickness be 1.5~2.0mm, after the completion of to be coated, at room temperature stand solidification 1~2h,
It is prepared into modified blank, then modified blank is placed in tube furnace, argon gas is led to it and excludes air, then in argon atmosphere
Under, 1200~1300 DEG C, 1~2h of calcining at constant temperature are warming up to by 5 DEG C/min speed, after the completion of calcining, tube furnace is passed through sky
Gas, cooled to room temperature can be prepared into high-heat-dispersion LED substrate.
Example 1
（2）Discarded straight chain silicon rubber, vinyon are collected first, are cleaned and are dried respectively, it then will dry silicon rubber
It is placed in air-flow crushing with vinyon one, is crushed to the mixing fritter that diameter is 1cm, then according to parts by weight,
75 parts of toluene, 15 parts of hexamethylenes, 15 parts of dehydrated alcohols are chosen respectively, is stirred, is prepared into lysate, then press solid-to-liquid ratio 1:
8, the mixing fritter of above-mentioned preparation and lysate are stirred 30min, after standing 2h, are prepared into mixed and modified colloidal sol, it is spare；
Again according to parts by weight, 45 parts of Al are weighed respectively2O3, 20 parts of brass powders, 15 parts of calcium carbonate, 15 parts of MgO and 20 part of zinc oxide set
In ball mill, using dehydrated alcohol as medium, ball milling 6h；After the completion of ball milling, collection ball-milled powder, in mass ratio 1:10, it will
Polyvinyl alcohol is stirred with ball-milled powder, fill into mold, at room temperature stand 15min after, then at 10MPa dry-pressing at
Type then stands 15min, places it in dry 2h at 80 DEG C, is prepared into dry dry-pressing blank；By the mixed and modified colloidal sol of preparation
Uniformly on coating to the drying dry-pressing blank of above-mentioned preparation, control coating thickness is 2.0mm, after the completion of to be coated, at room temperature
Solidification 2h is stood, modified blank is prepared into, then modified blank is placed in tube furnace, argon gas is led to it and excludes air, then
Under an argon atmosphere, 1300 DEG C, calcining at constant temperature 2h are warming up to by 5 DEG C/min speed, after the completion of calcining, tube furnace is passed through sky
Gas, cooled to room temperature can be prepared into high-heat-dispersion LED substrate.LED substrate perfect heat-dissipating prepared by the present invention, heat pass
Leading coefficient is 3.0W/mK；And thermal expansion coefficient is low, effectively improves the performance of device.
Example 2
（3）Discarded straight chain silicon rubber, vinyon are collected first, are cleaned and are dried respectively, it then will dry silicon rubber
It is placed in air-flow crushing with vinyon one, is crushed to the mixing fritter that diameter is 1cm, then according to parts by weight,
60 parts of toluene, 15 parts of hexamethylenes, 15 parts of dehydrated alcohols are chosen respectively, is stirred, is prepared into lysate, then press solid-to-liquid ratio 1:
8, the mixing fritter of above-mentioned preparation and lysate are stirred 25min, after standing 1h, are prepared into mixed and modified colloidal sol, it is spare；
Again according to parts by weight, 25 parts of Al are weighed respectively2O3, 25 parts of brass powders, 15 parts of calcium carbonate, 15 parts of MgO and 20 part of zinc oxide set
In ball mill, using dehydrated alcohol as medium, ball milling 6h；After the completion of ball milling, collection ball-milled powder, in mass ratio 1:10, it will
Polyvinyl alcohol is stirred with ball-milled powder, fill into mold, at room temperature stand 15min after, then at 10MPa dry-pressing at
Type then stands 15min, places it in dry 2h at 80 DEG C, is prepared into dry dry-pressing blank；By the mixed and modified colloidal sol of preparation
Uniformly on coating to the drying dry-pressing blank of above-mentioned preparation, control coating thickness is 2.0mm, after the completion of to be coated, at room temperature
Solidification 2h is stood, modified blank is prepared into, then modified blank is placed in tube furnace, argon gas is led to it and excludes air, then
Under an argon atmosphere, 1300 DEG C, calcining at constant temperature 2h are warming up to by 5 DEG C/min speed, after the completion of calcining, tube furnace is passed through sky
Gas, cooled to room temperature can be prepared into high-heat-dispersion LED substrate.LED substrate perfect heat-dissipating prepared by the present invention, heat pass
Leading coefficient is 2.0W/mK；And thermal expansion coefficient is low, effectively improves the performance of device.
Example 3
（4）Discarded straight chain silicon rubber, vinyon are collected first, are cleaned and are dried respectively, it then will dry silicon rubber
It is placed in air-flow crushing with vinyon one, is crushed to the mixing fritter that diameter is 1cm, then according to parts by weight,
65 parts of toluene, 20 parts of hexamethylenes, 20 parts of dehydrated alcohols are chosen respectively, is stirred, is prepared into lysate, then press solid-to-liquid ratio 1:
8, the mixing fritter of above-mentioned preparation and lysate are stirred 27min, after standing 2h, are prepared into mixed and modified colloidal sol, it is spare；
Again according to parts by weight, 30 parts of Al are weighed respectively2O3, 20 parts of brass powders, 12 parts of calcium carbonate, 12 parts of MgO and 17 part of zinc oxide set
In ball mill, using dehydrated alcohol as medium, ball milling 5h；After the completion of ball milling, collection ball-milled powder, in mass ratio 1:10, it will
Polyvinyl alcohol is stirred with ball-milled powder, fill into mold, at room temperature stand 12min after, then at 7MPa dry-pressing at
Type then stands 12min, places it in dry 1h at 70 DEG C, is prepared into dry dry-pressing blank；By the mixed and modified colloidal sol of preparation
Uniformly on coating to the drying dry-pressing blank of above-mentioned preparation, control coating thickness is 1.7mm, after the completion of to be coated, at room temperature
Solidification 1h is stood, modified blank is prepared into, then modified blank is placed in tube furnace, argon gas is led to it and excludes air, then
Under an argon atmosphere, 1250 DEG C, calcining at constant temperature 2h are warming up to by 5 DEG C/min speed, after the completion of calcining, tube furnace is passed through sky
Gas, cooled to room temperature can be prepared into high-heat-dispersion LED substrate.LED substrate perfect heat-dissipating prepared by the present invention, heat pass
Leading coefficient is 2.5W/mK；And thermal expansion coefficient is low, effectively improves the performance of device.
Claims (1)
1. a kind of modified method for preparing high-heat-dispersion LED substrate of discarded straight chain silica gel, it is characterised in that specifically preparation step is：
（1）Discarded straight chain silicon rubber, vinyon are collected, cleans and dries respectively, it then will dry silicon rubber and polyethylene
Plastics one are placed in air-flow crushing, are crushed to diameter and are the mixing fritter of 1cm, then according to parts by weight, choose respectively
60~75 parts of toluene, 15~25 parts of hexamethylenes, 15~20 parts of dehydrated alcohols, are stirred, are prepared into lysate, then press solid-liquid
Than 1:8, the mixing fritter of above-mentioned preparation and lysate are stirred 25~30min, after standing 1~2h, mixing is prepared into and changes
Property colloidal sol, it is spare；
（2）According to parts by weight, 25~45 parts of Al are weighed respectively2O3, 20~25 parts of brass powders, 10~15 parts of calcium carbonate, 10~
15 parts of MgO and 15~20 part of zinc oxide are placed in ball mill, using dehydrated alcohol as medium, 4~6h of ball milling；
（3）After the completion of ball milling, collection ball-milled powder, in mass ratio 1:10, polyvinyl alcohol and ball-milled powder are stirred, filled out
Be charged in mold, at room temperature stand 10~15min after, then at 5~10MPa it is dry-pressing formed, then stand 10~15min,
Dry 1~2h at 65~80 DEG C is placed it in, dry dry-pressing blank is prepared into；
（4）By step（1）The mixed and modified colloidal sol of preparation is uniformly coated to the drying dry-pressing blank of above-mentioned preparation, control coating
With a thickness of 1.5~2.0mm, after the completion of to be coated, 1~2h of solidification is stood at room temperature, modified blank is prepared into, will then be modified
Blank is placed in tube furnace, and argon gas exclusion air is led to it and is then under an argon atmosphere warming up to 1200 by 5 DEG C/min speed
~1300 DEG C, 1~2h of calcining at constant temperature, after the completion of calcining, tube furnace is passed through air, cooled to room temperature can be prepared
Obtain high-heat-dispersion LED substrate.
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| CN201610484365.5A CN106098897B (en) | 2016-06-28 | 2016-06-28 | A kind of modified method for preparing high-heat-dispersion LED substrate of discarded straight chain silica gel |
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| CN201610484365.5A CN106098897B (en) | 2016-06-28 | 2016-06-28 | A kind of modified method for preparing high-heat-dispersion LED substrate of discarded straight chain silica gel |
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| CN102030515A (en) * | 2010-10-15 | 2011-04-27 | 广东工业大学 | Low-temperature synthetized aluminum oxide-based ceramic heat dissipation substrate material and preparation method thereof |
| CN102503382A (en) * | 2011-11-04 | 2012-06-20 | 东莞市凯昶德电子科技股份有限公司 | Al2O3 ceramic material for LED radiating substrate |
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Denomination of invention: A method for preparing high heat dissipation LED substrate by modification of waste straight-chain silica gel Effective date of registration: 20220907 Granted publication date: 20181116 Pledgee: Pinghu Zhejiang rural commercial bank Limited by Share Ltd. Cao Qiao Branch Pledgor: ZHEJIANG IENERGY LIGHTING CO.,LTD. Registration number: Y2022330002153 |