CN106098703A - 显示面板及其制造方法、显示器 - Google Patents

显示面板及其制造方法、显示器 Download PDF

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CN106098703A
CN106098703A CN201610512800.0A CN201610512800A CN106098703A CN 106098703 A CN106098703 A CN 106098703A CN 201610512800 A CN201610512800 A CN 201610512800A CN 106098703 A CN106098703 A CN 106098703A
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layer
substrate
color blocking
drain
display floater
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CN106098703B (zh
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唐岳军
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Wuhan China Star Optoelectronics Technology Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
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    • H—ELECTRICITY
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
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    • G—PHYSICS
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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Abstract

本发明公开了一种显示面板及其制造方法、显示器，该显示面板包括相对设置的第一基板和第二基板、设置在第一基板上且依次沿靠近第二基板的方向设置的黑色矩阵、多晶硅层、栅极层、漏源层，黑色矩阵遮挡由第一基板射入且射向多晶硅层的环境光，栅极层、漏源层共同遮挡由第二基板射入且射向多晶硅层的背光。本发明还公开了一种显示面板的制造方法和显示器。通过上述方式，本发明能够简化显示面板的制造工艺。

Description

显示面板及其制造方法、显示器
技术领域
本发明涉及显示技术领域，特别是涉及一种显示面板及其制造方法、显示器。
背景技术
目前，随着液晶显示器的广泛应用，高分辨率成为发展趋势。
为了提升高分辨率像素下的开口率，开发和使用了LTPS(Low Temperature Poly-silicon，低温多晶硅)工艺，然而LTPS工艺复杂，在为了确保LTPS TFT性能的前提下通常需要10～12道光罩，再加上CF侧的光罩，使得LTPS显示面板的工艺更加的复杂/光罩繁多。
因此，需要提供一种显示面板及其制造方法、显示器，以解决上述技术问题。
发明内容
本发明主要解决的技术问题是提供一种显示面板及其制造方法、显示器，能够简化显示面板的制造工艺。
为解决上述技术问题，本发明采用的一个技术方案是：提供一种显示面板，显示面板包括相对设置的第一基板和第二基板、设置在第一基板上且依次沿靠近第二基板的方向设置的黑色矩阵、多晶硅层、栅极层、漏源层，黑色矩阵遮挡由第一基板射入且射向多晶硅层的环境光，栅极层、漏源层共同遮挡由第二基板射入且射向多晶硅层的背光。
其中，显示面板还包括设置在漏源层靠近第二基板一侧的色阻层，色阻层将漏源层平坦化。
其中，显示面板还包括设置在漏源层靠近第二基板一侧的色阻层和设置在色阻层靠近第二基板的表面上的平坦化层，色阻层和平坦化层共同将漏源层平坦化。
其中，显示面板还包括缓冲层、栅极绝缘层以及层间介质层，缓冲层设置在黑色矩阵和第一基板上，多晶硅层设置在缓冲层上，栅极绝缘层设置在多晶硅层和缓冲层上，栅极层设置在栅极绝缘层上，层间介质层设置在栅极层和栅极绝缘层上，漏源层设置在层间介质层上且通过设置在层间介质层上的过孔与多晶硅层导通。
其中，显示面板还包括设置于色阻层上的公共电极层、设置在色阻层和公共电极层上的绝缘层以及设置在绝缘层上的像素电极，像素电极通过设置在绝缘层上的过孔与漏源层导通。
其中，显示面板还包括设置于平坦化层上的公共电极层、设置在平坦化层和公共电极层上的绝缘层以及设置在绝缘层上的像素电极，像素电极通过设置在绝缘层上的过孔与漏源层导通。
为解决上述技术问题，本发明采用的另一个技术方案是：提供一种显示面板的制造方法，该制造方法包括：使黑色矩阵、多晶硅层、栅极层、漏源层依次沿远离第一基板的方向设置在第一基板上；第一基板和第二基板进行对组形成显示面板，以使黑色矩阵遮挡由第一基板射入且射向多晶硅层的环境光，栅极层、漏源层共同遮挡由第二基板射入且射向多晶硅层的背光。
其中，使黑色矩阵、多晶硅层、栅极层、漏源层依次沿远离第一基板的方向设置在第一基板上之后还包括：在漏源层靠近第二基板一侧形成色阻层，以使色阻层将漏源层平坦化；或者，使黑色矩阵、多晶硅层、栅极层、漏源层依次沿远离第一基板的方向设置在第一基板上之后还包括：在漏源层靠近第二基板一侧形成色阻层；在色阻层靠近第二基板的表面上形成平坦化层。
其中，使黑色矩阵、多晶硅层、栅极层、漏源层依次沿远离第一基板的方向设置在第一基板上之后还包括：在漏源层靠近第二基板一侧形成包括部分色阻的色阻层，并预留剩余色阻的间隙；在间隙中填满剩余色阻的材料，并使剩余色阻的材料铺在色阻层上；将色阻层上的剩余色阻材料刮平并使剩余色阻材料成型，以形成剩余色阻和由色阻层上的剩余色阻材料成型形成的平坦化层；蚀刻保留预定位置的平坦化层。
为解决上述技术问题，本发明采用的又一个技术方案是：提供一种显示器，该显示器包括上述的显示面板和用于为显示面板提供背光的背光模组。
本发明的有益效果是：区别于现有技术的情况，本发明的显示面板包括相对设置的第一基板和第二基板、设置在第一基板上且依次沿靠近第二基板的方向设置的黑色矩阵、多晶硅层、栅极层、漏源层，黑色矩阵遮挡由第一基板射入且射向多晶硅层的环境光，栅极层、漏源层共同遮挡由第二基板射入且射向多晶硅层的背光，通过上述方式，本发明通过黑色矩阵遮挡环境光线，同时通过漏源层和栅极层遮挡背光光线的功能，省去了原本用来遮挡环境光的Shield(遮挡)层的制程。
附图说明
图1是本发明第一实施例的显示面板的结构示意图；
图2是本发明第二实施例的显示面板的结构示意图；
图3是本发明显示器的结构示意图；
图4是本发明显示面板制造方法的流程示意图。
具体实施方式
下面结合附图和实施例对本发明进行详细的说明。
请参阅图1，图1是本发明第一实施例的显示面板的结构示意图。在本实施例中，显示面板包括相对设置的第一基板11和第二基板12、夹持在第一基板11和第二基板12之间的液晶层13、设置在第一基板11上且依次沿靠近第二基板12的方向设置的黑色矩阵14、多晶硅层15、栅极层16、漏源层17。
黑色矩阵15遮挡由第一基板11射入且射向多晶硅层15的环境光，栅极层16、漏源层17共同遮挡由第二基板12射入且射向多晶硅层15的背光。也就是说，黑色矩阵15在多晶硅层15所在平面的垂直投影覆盖多晶硅层15，栅极层16、漏源层17在多晶硅层15所在平面的垂直投影覆盖多晶硅层15。
优选地，黑色矩阵14可以采用Cr(铬金属)等能呈现黑色或者其他期望颜色的金属以及金属化合物制作，以便该黑色矩阵14能够经受后续高温工艺。
由于黑色矩阵14遮挡由第一基板11射入且射向多晶硅层15的环境光，栅极层16、漏源层17共同遮挡由第二基板12射入且射向多晶硅层15的背光，因此可以省去一道遮挡层的制程。
优选地，显示面板还包括设置在漏源层17靠近第二基板12一侧的色阻层18，色阻层18将漏源层17平坦化。由于色阻层18起到了将漏源层17平坦化的作用因此不需要另外设置在漏源层17上设置平坦化层，因此可以省去一道平坦化层的制程。
优选地，在本实施例中，显示面板还包括缓冲层19、栅极绝缘层20以及层间介质层21。缓冲层19设置在黑色矩阵15和第一基板11上，多晶硅层15设置在缓冲层19上，栅极绝缘层20设置在多晶硅层15和缓冲层19上，栅极层16设置在栅极绝缘层20上，层间介质层21设置在栅极层16和栅极绝缘层20上，漏源层17设置在层间介质层21上且通过设置在层间介质层21上的过孔与多晶硅层15导通。
优选地，显示面板还包括设置于色阻层18上的公共电极层22、设置在色阻层18和公共电极层22上的绝缘层23以及设置在绝缘层23上的像素电极24，像素电极24通过设置在绝缘层23上的过孔与漏源层17导通。
优选地，缓冲层19包括层叠的氮化硅(SiNx)层191和氧化硅(SiOx)层192。更为优选地，氮化硅层191设置在黑色矩阵15和第一基板11上。氧化硅层192设置在氮化硅层191上。在其他实施例中，可以将氮化硅层191的位置与氧化硅层192进行调换，即氧化硅层192设置在黑色矩阵15和第一基板11上。氮化硅层191设置在氧化硅层192上。
优选地，层间介质层21包括层叠的氧化硅层211和氮化硅层212。更为优选地，氧化硅层211设置在栅极层16和栅极绝缘层20上，氮化硅层212设置在氧化硅层211上。在其他实施例中，氧化硅层211和氮化硅层212的位置也可以调换，即氮化硅层212设置在栅极层16和栅极绝缘层20上，氧化硅层211设置在氮化硅层212上。
优选地，第二基板12靠近第一基板11一侧表面上设置有隔离层25。隔离层25可以是SiNx(氮化硅)、SIOx(氧化硅)或者树脂平坦化层等材料或者其中任意几种的组合多层结构。
优选地，第二基板12靠近第一基板11的表面上设置有支撑柱26；或者在其他实施例中，隔离层25靠近第一基板11的表面上设置有支撑柱(图未示)；或者第一基板11上设置有支撑柱(图未示)，支撑柱26的一部分为第一基板11上的膜层蚀刻或显影时保留的部分形成。
请参阅图2，图2是本发明第二实施例的显示面板的结构示意图。在本实施例中，显示面板包括相对设置的第一基板31和第二基板32、夹持在第一基板31和第二基板32之间的液晶层33、设置在第一基板31上且依次沿靠近第二基板32的方向设置的黑色矩阵34、多晶硅层35、栅极层36、漏源层37。
黑色矩阵34遮挡由第一基板31射入且射向多晶硅层35的环境光，栅极层36、漏源层37共同遮挡由第二基板32射入且射向多晶硅层35的背光。也就是说，黑色矩阵35在多晶硅层35所在平面的垂直投影覆盖多晶硅层35，栅极层36、漏源层37在多晶硅层35所在平面的垂直投影覆盖多晶硅35。
优选地，黑色矩阵34可以采用Cr(铬金属)等能呈现黑色或者其他期望颜色的金属以及金属化合物制作，以便该黑色矩阵34能够经受后续高温工艺。
由于黑色矩阵34遮挡由第一基板31射入且射向多晶硅层35的环境光，栅极层36、漏源层37共同遮挡由第二基板32射入且射向多晶硅层35的背光，因此可以省去一道遮挡层的制程。
优选地，显示面板还包括设置在漏源层37靠近第二基板32一侧的色阻层38和设置在色阻层38靠近第二基板32的表面上的平坦化层47，色阻层38和平坦化层47共同将漏源层37平坦化。
值得注意的是，由于色阻层38和平坦化层47共同起到了将漏源层47平坦化的作用，平坦化层47可以设置的更薄节省了平坦化层47的材料。例如可以在形成色阻层38之后再在色阻层上形成薄型的平坦化层47。或者例如，在RGBW显示模式中，在制作完RGB色阻后预留W色阻的间隙，然后利用旋涂法或者Slit(狭缝)喷涂—刮平法在预留的W色阻的间隙中制作W色阻，并且利用高出RGB色阻的W色阻材料刮平形成薄型的平坦化层47，即可以用W色阻的材料充当平坦化层47。
优选地，在本实施例中，显示面板还包括缓冲层39、栅极绝缘层40以及层间介质层41。缓冲层39设置在黑色矩阵35和第一基板31上，多晶硅层35设置在缓冲层39上，栅极绝缘层40设置在多晶硅层35和缓冲层39上，栅极层36设置在栅极绝缘层40上，层间介质层41设置在栅极层36和栅极绝缘层40上，漏源层37设置在层间介质层41上且通过设置在层间介质层41上的过孔与多晶硅层35导通。
优选地，显示面板还包括设置于平坦化层47上的公共电极层42、设置在平坦化层47和公共电极层42上的绝缘层43以及设置在绝缘层43上的像素电极44，像素电极44通过设置在绝缘层43上的过孔与漏源层37导通。
优选地，缓冲层39包括层叠的氮化硅(SiNx)层391和氧化硅(SiOx)层392。更为优选地，氮化硅层391设置在黑色矩阵35和第一基板31上。氧化硅层392设置在氮化硅层391上。在其他实施例中，可以将氮化硅层391的位置与氧化硅层392进行调换，即氧化硅层392设置在黑色矩阵35和第一基板31上。氮化硅层391设置在氧化硅层392上。
优选地，层间介质层41包括层叠的氧化硅层411和氮化硅层412。更为优选地，氧化硅层411设置在栅极层36和栅极绝缘层40上，氮化硅层412设置在氧化硅层411上。在其他实施例中，氧化硅层411和氮化硅层412的位置也可以调换，即氮化硅层412设置在栅极层36和栅极绝缘层40上，氧化硅层411设置在氮化硅层412上。
优选地，第二基板32靠近第一基板31一侧表面上设置有隔离层45。隔离层45可以是SiNx(氮化硅)、SIOx(氧化硅)或者树脂平坦化层等材料或者其中任意几种的组合多层结构。
优选地，第二基板32靠近第一基板31的表面上设置有支撑柱46；或者在其他实施例中，隔离层45靠近第一基板31的表面上设置有支撑柱(图未示)；或者第一基板31上设置有支撑柱(图未示)，支撑柱46的一部分为第一基板31上的膜层蚀刻或显影时保留的部分形成。
应理解，本发明第一实施例和第二实施例的显示面板中示意了FFS显示模式中像素的局部结构，显示面板像素其他部位结构可以与图示有差异。本提案示意FFS(边缘场开关)显示模式的像素局部结构，本发明精神还适用于其他显示模式的像素结构，例如VAmode(垂直配向模式)、TN mode(扭曲向列型)等。
请参阅图3，图3是本发明显示器的结构示意图。在本实施例中，显示器包括显示面板51和用于为显示面板51提供背光的背光模组52。显示面板51为上述任意一实施例中描述的显示面板51。图3中以第一实施例的显示面板为例，但是在其他实施例中也可以是上述的任意一个实施例中所描述的显示面板，优选地，图1中所示的第一基板11为TOP基板(上基板)，第二基板12为BOTTOM基板(下基板)。图2中所示的第一基板31为TOP基板，第二基板32为BOTTOM基板。图1和图2中显示面板均为倒置。
请参阅图4，图4是本发明的显示面板制造方法的流程图。在本实施例中，显示面板的制造方法包括以下步骤：
步骤S11：使黑色矩阵、多晶硅层、栅极层、漏源层依次沿远离第一基板的方向设置在第一基板上。
在步骤S11中，具体的可以包括以下步骤，在第一基板上形成黑色矩阵；在黑色矩阵和第一基板上形成缓冲层；在缓冲层上形成多晶硅层；在多晶硅层和缓冲层上形成栅极绝缘层；在栅极绝缘层上形成栅极层；在栅极层和栅极绝缘层上形成层间介质层；在所述层间介质层上设置漏源层并在层间介质层上形成过孔以使漏源层和多晶硅层导通。其中，优选地，在黑色矩阵和第一基板上形成缓冲层包括：在黑色矩阵和第一基板上形成氮化硅层，在氮化硅层上形成氧化硅层。其中，优选地，在栅极层和栅极绝缘层上形成层间介质层包括：在栅极层和栅极绝缘层上形成氧化硅层，在氧化硅层上形成氮化硅层。以上是FFS显示模式中的膜层结构，其他显示模式的膜层结构可以有所区别，例如VA mode(垂直配向模式)、TN mode(扭曲向列型)可以为其他的膜层结构。
步骤S12：第一基板和第二基板进行对组形成显示面板，以使黑色矩阵遮挡由第一基板射入且射向多晶硅层的环境光，栅极层、漏源层共同遮挡由第二基板射入且射向多晶硅层的背光。
上述的制造方法中，黑色矩阵在多晶硅层所在平面的垂直投影覆盖多晶硅层，栅极层、漏源层在多晶硅层所在平面的垂直投影覆盖多晶硅层。由于黑色矩阵遮挡由第一基板射入且射向多晶硅层的环境光，栅极层、漏源层共同遮挡由第二基板射入且射向多晶硅层的背光，因此可以省去一道遮挡层的制程。
进一步地，在第一种情况下，在步骤S11之后还可以包括以下步骤：在漏源层靠近第二基板一侧形成色阻层，以使色阻层将漏源层平坦化；在色阻层上形成公共电极层；在色阻层和公共电极层上形成绝缘层；在绝缘层上形成像素电极。在这种情况下可以在省去一道遮挡层制程的情况进一步省去一层平坦化层的制程，由色阻层充当平坦化层的作用。
在第二种情况下，在步骤S11之后还可以包括：在漏源层靠近第二基板一侧形成色阻层；在色阻层靠近第二基板的表面上形成平坦化层；在平坦化层上形成公共电极层；在色阻层和公共电极层上形成绝缘层；在绝缘层上形成像素电极。在这种情况下可以在省去一道遮挡层制程的情况下进一步节省平坦化层的材料，只需要在色阻层上形成薄型的平坦化层即可。
在第三种情况下，在步骤S11之后还可以包括：在漏源层靠近第二基板一侧形成包括部分色阻的色阻层，并预留剩余色阻的间隙；在间隙中填满剩余色阻的材料，并使剩余色阻的材料铺在色阻层上；将色阻层上的剩余色阻材料刮平并使剩余色阻材料成型，以形成剩余色阻和由色阻层上的剩余色阻材料成型形成的平坦化层；蚀刻保留预定位置的平坦化层；在平坦化层上形成公共电极层；在色阻层和公共电极层上形成绝缘层；在绝缘层上形成像素电极。在这种情况下可以在省去一道遮挡层制程的情况下进一步节省平坦化层的材料，只需要在色阻层上形成薄型的平坦化层即可，还可以利用色阻层的材料来充当平坦化层。
在第三种情况下，例如，在RGBW显示模式中，在制作完RGB色阻后预留W色阻的间隙，然后利用旋涂法或者Slit(狭缝)喷涂—刮平法在预留的W色阻的间隙中制作W色阻，并且利用高出RGB色阻的W色阻材料刮平形成薄型的平坦化层，即可以用W色阻的材料充当平坦化层。在第三种情况下，由于色阻层较厚，色阻层上的公共电极层、像素电极、绝缘层等较薄，因此，色阻层是否平坦对第一基板上的膜层是否平坦影响相对较大，公共电极层、像素电极、绝缘层是否平坦依赖于色阻层的平坦性，在绝缘层上形成像素电极后可以制作支撑柱。
优选地，在步骤S11之后还可以包括在第二基板上形成隔离层。隔离层45可以是SiNx(氮化硅)、SIOx(氧化硅)或者树脂平坦化层等材料或者其中任意几种的组合多层结构。
本发明的显示面板包括相对设置的第一基板和第二基板、设置在第一基板上且依次沿靠近第二基板的方向设置的黑色矩阵、多晶硅层、栅极层、漏源层，黑色矩阵遮挡由第一基板射入且射向多晶硅层的环境光，栅极层、漏源层共同遮挡由第二基板射入且射向多晶硅层的背光，通过上述方式，本发明通过黑色矩阵遮挡环境光线，同时通过漏源层和栅极层遮挡背光光线的功能，省去了原本用来遮挡环境光的Shield(遮挡)层的制程，RGB、RGBW色阻层充当TFT平坦层化层，可以节省平坦化层的制程。
以上所述仅为本发明的实施方式，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。

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1.一种显示面板，其特征在于，所述显示面板包括相对设置的第一基板和第二基板、设置在第一基板上且依次沿靠近所述第二基板的方向设置的黑色矩阵、多晶硅层、栅极层、漏源层，所述黑色矩阵遮挡由所述第一基板射入且射向所述多晶硅层的环境光，所述栅极层、所述漏源层共同遮挡由所述第二基板射入且射向所述多晶硅层的背光。
2.根据权利要求1所述的显示面板，其特征在于，所述显示面板还包括设置在所述漏源层靠近所述第二基板一侧的色阻层，所述色阻层将所述漏源层平坦化。
3.根据权利要求1所述的显示面板，其特征在于，所述显示面板还包括设置在所述漏源层靠近所述第二基板一侧的色阻层和设置在所述色阻层靠近所述第二基板的表面上的平坦化层，所述色阻层和所述平坦化层共同将所述漏源层平坦化。
4.根据权利要求1-3任意一项所述的显示面板，其特征在于，所述显示面板还包括缓冲层、栅极绝缘层以及层间介质层，所述缓冲层设置在所述黑色矩阵和所述第一基板上，所述多晶硅层设置在所述缓冲层上，所述栅极绝缘层设置在所述多晶硅层和所述缓冲层上，所述栅极层设置在所述栅极绝缘层上，所述层间介质层设置在所述栅极层和所述栅极绝缘层上，所述漏源层设置在所述层间介质层上且通过设置在所述层间介质层上的过孔与所述多晶硅层导通。
5.根据权利要求2所述的显示面板，其特征在于，所述显示面板还包括设置于所述色阻层上的公共电极层、设置在所述色阻层和所述公共电极层上的绝缘层以及设置在所述绝缘层上的像素电极，所述像素电极通过设置在所述绝缘层上的过孔与所述漏源层导通。
6.根据权利要求3所述的显示面板，其特征在于，所述显示面板还包括设置于所述平坦化层上的公共电极层、设置在所述平坦化层和所述公共电极层上的绝缘层以及设置在所述绝缘层上的像素电极，所述像素电极通过设置在所述绝缘层上的过孔与所述漏源层导通。
7.一种显示面板的制造方法，其特征在于，所述显示面板的制造方法包括：
使黑色矩阵、多晶硅层、栅极层、漏源层依次沿远离第一基板的方向设置在所述第一基板上；
所述第一基板和第二基板进行对组形成所述显示面板，以使所述黑色矩阵遮挡由所述第一基板射入且射向所述多晶硅层的环境光，所述栅极层、所述漏源层共同遮挡由所述第二基板射入且射向所述多晶硅层的背光。
8.根据权利要求7所述的制造方法，其特征在于，所述使黑色矩阵、多晶硅层、栅极层、漏源层依次沿远离第一基板的方向设置在所述第一基板上之后还包括：在所述漏源层靠近所述第二基板一侧形成色阻层，以使所述色阻层将所述漏源层平坦化；
或者，
所述使黑色矩阵、多晶硅层、栅极层、漏源层依次沿远离第一基板的方向设置在所述第一基板上之后还包括：
在所述漏源层靠近所述第二基板一侧形成色阻层；
在所述色阻层靠近所述第二基板的表面上形成平坦化层。
9.根据权利要求7所述的制造方法，其特征在于，所述使黑色矩阵、多晶硅层、栅极层、漏源层依次沿远离第一基板的方向设置在所述第一基板上之后还包括：
在所述漏源层靠近所述第二基板一侧形成包括部分色阻的色阻层，并预留剩余色阻的间隙；
在所述间隙中填满剩余色阻的材料，并使所述剩余色阻的材料铺在色阻层上；
将色阻层上的剩余色阻材料刮平并使所述剩余色阻材料成型，以形成所述剩余色阻和由所述色阻层上的剩余色阻材料成型形成的平坦化层；
蚀刻保留预定位置的所述平坦化层。
10.一种显示器，其特征在于，所述显示器包括如权利要求1-6任意一项所述的显示面板和用于为所述显示面板提供背光的背光模组。
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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109003989A (zh) * 2018-07-27 2018-12-14 厦门天马微电子有限公司 阵列基板及其制备方法、显示面板和显示装置
US20190086720A1 (en) * 2017-09-21 2019-03-21 Apple Inc. Liquid Crystal Display
WO2019119889A1 (zh) * 2017-12-21 2019-06-27 惠科股份有限公司 阵列基板及其制造方法、液晶显示面板及其制造方法
CN111341794A (zh) * 2020-04-08 2020-06-26 武汉华星光电技术有限公司 显示面板、阵列基板及其制作方法
CN111933675A (zh) * 2020-08-18 2020-11-13 维沃移动通信有限公司 显示模组和电子设备以及显示模组制备方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106847743B (zh) * 2017-02-07 2019-12-24 武汉华星光电技术有限公司 Tft基板及其制作方法
KR20220148999A (ko) * 2021-04-29 2022-11-08 삼성디스플레이 주식회사 표시 장치 및 그 구동 방법

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070013839A1 (en) * 2005-07-14 2007-01-18 Samsung Electronics Co., Ltd. Liquid crystal display device with reduced defect rate and improved color reproductivity
CN102799014A (zh) * 2012-09-07 2012-11-28 深圳市华星光电技术有限公司 液晶显示面板的制作方法
CN103474430A (zh) * 2012-06-07 2013-12-25 群康科技(深圳)有限公司 薄膜晶体管基板及其制作方法以及显示器
CN104752637A (zh) * 2013-12-31 2015-07-01 乐金显示有限公司 有机发光显示装置及其制造方法
CN105093735A (zh) * 2015-07-10 2015-11-25 深圳市华星光电技术有限公司 一种阵列基板及其制作方法
CN105676547A (zh) * 2016-04-19 2016-06-15 深圳市华星光电技术有限公司 一种液晶显示面板、显示装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011058685A1 (ja) * 2009-11-12 2011-05-19 シャープ株式会社 薄膜トランジスタ基板及びその製造方法
JP5855888B2 (ja) * 2011-09-30 2016-02-09 株式会社ジャパンディスプレイ 液晶表示装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070013839A1 (en) * 2005-07-14 2007-01-18 Samsung Electronics Co., Ltd. Liquid crystal display device with reduced defect rate and improved color reproductivity
CN103474430A (zh) * 2012-06-07 2013-12-25 群康科技(深圳)有限公司 薄膜晶体管基板及其制作方法以及显示器
CN102799014A (zh) * 2012-09-07 2012-11-28 深圳市华星光电技术有限公司 液晶显示面板的制作方法
CN104752637A (zh) * 2013-12-31 2015-07-01 乐金显示有限公司 有机发光显示装置及其制造方法
CN105093735A (zh) * 2015-07-10 2015-11-25 深圳市华星光电技术有限公司 一种阵列基板及其制作方法
CN105676547A (zh) * 2016-04-19 2016-06-15 深圳市华星光电技术有限公司 一种液晶显示面板、显示装置

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20190086720A1 (en) * 2017-09-21 2019-03-21 Apple Inc. Liquid Crystal Display
WO2019060033A1 (en) * 2017-09-21 2019-03-28 Apple Inc. LIQUID CRYSTAL DISPLAY
US10754212B2 (en) * 2017-09-21 2020-08-25 Apple Inc. Liquid crystal display
WO2019119889A1 (zh) * 2017-12-21 2019-06-27 惠科股份有限公司 阵列基板及其制造方法、液晶显示面板及其制造方法
CN109003989A (zh) * 2018-07-27 2018-12-14 厦门天马微电子有限公司 阵列基板及其制备方法、显示面板和显示装置
CN111341794A (zh) * 2020-04-08 2020-06-26 武汉华星光电技术有限公司 显示面板、阵列基板及其制作方法
CN111933675A (zh) * 2020-08-18 2020-11-13 维沃移动通信有限公司 显示模组和电子设备以及显示模组制备方法
CN111933675B (zh) * 2020-08-18 2023-07-11 维沃移动通信有限公司 显示模组和电子设备以及显示模组制备方法

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