CN106057994B - Light emitting element - Google Patents
Light emitting element Download PDFInfo
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- CN106057994B CN106057994B CN201610668838.7A CN201610668838A CN106057994B CN 106057994 B CN106057994 B CN 106057994B CN 201610668838 A CN201610668838 A CN 201610668838A CN 106057994 B CN106057994 B CN 106057994B
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- 239000004065 semiconductor Substances 0.000 claims abstract description 118
- 239000000463 material Substances 0.000 claims abstract description 33
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 17
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 13
- 229910002601 GaN Inorganic materials 0.000 claims description 12
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 10
- 239000004020 conductor Substances 0.000 claims description 10
- 229910052733 gallium Inorganic materials 0.000 claims description 10
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 10
- 239000011787 zinc oxide Substances 0.000 claims description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 7
- -1 aluminium tin-oxide Chemical compound 0.000 claims description 6
- 229910044991 metal oxide Inorganic materials 0.000 claims description 6
- 150000004706 metal oxides Chemical class 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 4
- IEJHYFOJNUCIBD-UHFFFAOYSA-N cadmium(2+) indium(3+) oxygen(2-) Chemical compound [O-2].[Cd+2].[In+3] IEJHYFOJNUCIBD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- TYHJXGDMRRJCRY-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Sn+4].[In+3] TYHJXGDMRRJCRY-UHFFFAOYSA-N 0.000 claims description 3
- UMJICYDOGPFMOB-UHFFFAOYSA-N zinc;cadmium(2+);oxygen(2-) Chemical compound [O-2].[O-2].[Zn+2].[Cd+2] UMJICYDOGPFMOB-UHFFFAOYSA-N 0.000 claims description 3
- DTMUJVXXDFWQOA-UHFFFAOYSA-N [Sn].FOF Chemical compound [Sn].FOF DTMUJVXXDFWQOA-UHFFFAOYSA-N 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 2
- 229910052737 gold Inorganic materials 0.000 claims 2
- 239000010931 gold Substances 0.000 claims 2
- 239000013078 crystal Substances 0.000 abstract description 9
- 239000010410 layer Substances 0.000 description 239
- 238000004519 manufacturing process Methods 0.000 description 14
- 238000005229 chemical vapour deposition Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 9
- 238000000407 epitaxy Methods 0.000 description 9
- 229910052738 indium Inorganic materials 0.000 description 9
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 9
- 229910052760 oxygen Inorganic materials 0.000 description 9
- 239000001301 oxygen Substances 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 238000004458 analytical method Methods 0.000 description 6
- 239000007787 solid Substances 0.000 description 5
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- QNRATNLHPGXHMA-XZHTYLCXSA-N (r)-(6-ethoxyquinolin-4-yl)-[(2s,4s,5r)-5-ethyl-1-azabicyclo[2.2.2]octan-2-yl]methanol;hydrochloride Chemical compound Cl.C([C@H]([C@H](C1)CC)C2)CN1[C@@H]2[C@H](O)C1=CC=NC2=CC=C(OCC)C=C21 QNRATNLHPGXHMA-XZHTYLCXSA-N 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 230000035755 proliferation Effects 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 229960004424 carbon dioxide Drugs 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 229910002090 carbon oxide Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- NJWNEWQMQCGRDO-UHFFFAOYSA-N indium zinc Chemical compound [Zn].[In] NJWNEWQMQCGRDO-UHFFFAOYSA-N 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention relates to a light-emitting element, which comprises a first type doped semiconductor layer, a light-emitting layer, a second type doped semiconductor layer, a contact layer and an electrode unit. The light emitting layer is arranged on the first type doped semiconductor layer and converts electric energy into light when receiving electric energy, the second type doped semiconductor layer is arranged on the light emitting layer and is opposite to the first type doped semiconductor layer in electric property, the contact layer is made of semiconductor materials, a crystal lattice system of the contact layer is an orthorhombic system, the contact layer is arranged on the second type doped semiconductor layer, and the electrode unit transmits the electric energy from the outside to the light emitting layer. The invention utilizes the contact layer to reduce the contact resistance between the contact layer and the electrode unit, and simultaneously reduces the working voltage, increases the conductivity of the whole element, and further increases the luminous efficiency of the whole element.
Description
Technical field
The present invention relates to a kind of light-emitting components, more particularly to a kind of light-emitting component containing contact layer.
Background technique
Refering to fig. 1, current light-emitting component include be made of semiconductor material one layer of first type doping semiconductor layer 11,
One layer of luminescent layer, 12, one layers of second type doping semiconductor layer 13 and an electrode unit 14 constituted with conductor material.
The first type doping semiconductor layer 11 is constituted with n-type semiconductor, such as N-shaped gallium nitride, so commonly referred to as n
First type doping semiconductor layer 11 (is referred to as n-type doping semiconductor layer below) by type doping semiconductor layer.Second type doping half
Conductor layer 13 is constituted with p-type semiconductor material, such as p-type gallium nitride, so commonly referred to as p-type doping semiconductor layer (below will
Second type doping semiconductor layer 13 is referred to as p-type doping semiconductor layer).The luminescent layer 12 is folded in n-type doping semiconductor layer and p-type
Doped semiconductor interlayer, and convert electrical energy into luminous energy when receiving electric energy and shine.
The electrode unit 14 is constituted with such as conductors material such as metallic element, metal alloy, and is set to the n including one
First electrode 141 and a second electrode 142 being set on the p-type doping semiconductor layer on type doping semiconductor layer, should
First electrode 141, second electrode 142 are transmittable from extraneous electric energy.
When the first electrode 141 of electrode unit 14, second electrode 142 receive from extraneous electric energy, electric energy passes through
The n-type doping semiconductor layer and the p-type doping semiconductor layer reach the luminescent layer 12, and convert electrical energy into luminous energy and shine.
The luminescent layer 12, but the p-type doping semiconductor layer are reached again since electric current need to first flow through the p-type doping semiconductor layer
For semiconductor material, the speed that the rate and conductivity of electric current flowing are not so good as the electrode unit 14 constituted with conductor material is fast, makes
It is high at the contact resistance between second electrode 142 and the p-type doping semiconductor layer so that the operating voltage of light-emitting component entirety compared with
Height, luminous efficiency are unsatisfactory.
Although with the metal that for example indium tin oxide (Indium Tin Oxide, abbreviation ITO) etc. is transparent, electrical conductivity is good
After oxide is found, which is imported into immediately in the technology of above-mentioned light-emitting component,
To reduce the contact resistance between the p-type doping semiconductor layer and the second electrode 142, and it is uniform to increase electric current horizontal proliferation simultaneously
Degree.However, should with there is material category differences between the indium tin oxide transparency conducting layer constituted and p-type doping semiconductor layer too
The problem for causing contact resistance too high greatly.
Summary of the invention
The purpose of the present invention is to provide a kind of light-emitting components with low contact resistance.
Light-emitting component of the present invention includes one layer of first type doping semiconductor layer, one layer of luminescent layer, one layer of second type doping half
Conductor layer, one layer of contact layer and an electrode unit.
The luminescent layer is set on the first type doping semiconductor layer and converts electrical energy into light when receiving electric energy.
The second type doping semiconductor layer is set on the luminescent layer and with the first type doping semiconductor layer at opposite electricity
Property.
The contact layer is constituted with semiconductor material, and is set on the second type doping semiconductor layer, and the contact layer
Lattice System is orthorhombic system.
Electrode unit transmission is from extraneous electric energy to the luminescent layer.
Preferably, light emitting element, wherein the first type doping semiconductor layer, the luminescent layer and the second type are mixed
Miscellaneous semiconductor layer is made of gallium nitride base main material.
Preferably, light emitting element, wherein the first type doping semiconductor layer, the luminescent layer and the second type are mixed
The Lattice System of miscellaneous semiconductor layer is hexagonal crystal system.
Preferably, light emitting element, wherein the first type doping semiconductor layer, the luminescent layer, second type doping half
Conductor layer and the contact layer are the crystal form of monocrystalline.
Preferably, light emitting element, wherein the contact layer includes multiple upward convex from the second type doping semiconductor layer
The island structure stretched.
Preferably, light emitting element, wherein the contact layer includes one layer and is formed on the second type doping semiconductor layer
Layer body.
Preferably, light emitting element, wherein the contact layer further includes multiple from this layer of body toward far from second type doping
The island structure that the direction of semiconductor layer protrudes out.
Preferably, light emitting element, wherein the average diameter width of the island structure is 30nm~300nm, average height
For 10nm~20nm.
Preferably, light emitting element, wherein the spacing of two adjacent island structures is greater than 100nm.
Preferably, light emitting element, wherein the chemical formula of the contact layer is InyGa1-yOxN1-x, wherein 0 < y < 1,0
X≤1 <.
Preferably, light emitting element also includes one layer of transparency conducting layer for covering the contact layer.
Preferably, light emitting element, wherein the transparency conducting layer is selected from indium tin oxide, Al-Doped ZnO, indium zinc
Oxide and a combination above-mentioned.
Preferably, light emitting element, wherein the Lattice System of the transparency conducting layer is cubic system.
Preferably, light emitting element, wherein the transparency conducting layer is the solid form of polycrystalline or amorphous.
In addition, another object of the present invention, that is, providing a kind of production method of light-emitting component for having low contact resistance.
Then, the production method of light-emitting component of the present invention includes an epitaxy step and an electrode setting steps.
The epitaxy step sequentially forms one layer of six side in a manner of Metalorganic chemical vapor deposition method on a substrate
First type doping semiconductor layer of crystallographic system, the luminescent layer of one layer of hexagonal crystal system, one layer of hexagonal crystal system second type doped semiconductor
Layer and one layer of rhombic contact layer.
The electrode setting steps form a transmittable electrode unit from extraneous electric energy to the luminescent layer.
Preferably, the production method of light emitting element, wherein the chemical formula of the contact layer is InyGa1-yOxN1-x,
In, 1,0 x≤1 < 0 < y <.
Preferably, the production method of light emitting element, wherein the epitaxy step import as gallium source trimethyl gallium,
Trimethyl indium as indium source, the oxycompound as oxygen source, and nitrogen as carrier are grown up the contact layer.
Preferably, the production method of light emitting element, wherein the oxycompound in the epitaxy step is selected from water, oxygen, two
Carbonoxide, carbon monoxide and one group above-mentioned are combined into material and are constituted.
Preferably, the production method of light emitting element also includes a transparency conducting layer forming step, physics gas is utilized
Phase sedimentation is formed one layer in the contact layer surface and transparent is led using metal oxide or metallic film by what main material was constituted
Electric layer.
The beneficial effects of the present invention are: using Metalorganic chemical vapor deposition method in the second type doping semiconductor layer
The upper contact layer for forming low contact resistance reduces the operating voltage of element, and then the luminous efficiency of lift elements whereby.
Detailed description of the invention
Fig. 1 is a schematic cross-sectional view, illustrates current light-emitting component；
Fig. 2 is a schematic cross-sectional view, illustrates a preferred embodiment of light-emitting component of the present invention；
Fig. 3 is to analyze the preferred embodiment by the Energy Analyzer (EDS) that label is JEOL and model JSM-6700F
One analysis of components figure of chemical analysis possessed by contact layer illustrates that a contact layer of the preferred embodiment contains indium, gallium, and
Oxygen；
Fig. 4 is a content analysis table, illustrates the weight percent of indium, gallium and oxygen contained by the contact layer；
Fig. 5 is a schematic cross-sectional view, illustrates that contact layer of the invention includes body from level to level；
Fig. 6 is a schematic cross-sectional view, illustrates that contact layer of the invention includes this layer of body and island structure；
Fig. 7 is a schematic cross-sectional view, and illustrating light-emitting component of the present invention also includes layer of transparent conductive layer；
Fig. 8 is a schematic cross-sectional view, illustrates that the present invention is vertical type light emitting element；
Fig. 9 is a flow chart, illustrates the production method of light-emitting component of the present invention；
Figure 10 is a flow chart, illustrates that the production method of light-emitting component of the present invention also includes that a transparency conducting layer forms step
Suddenly.
Specific embodiment
The following describes the present invention in detail with reference to the accompanying drawings and embodiments.
Referring to Fig.2, a preferred embodiment of light-emitting component of the present invention, is formed in the base comprising one 20, one layers of substrate
21, one layers of the first type doping semiconductor layer, 23, one layers of second type doping semiconductor layer on material 20 is folded in first type doping
22, one layers of luminescent layer between semiconductor layer 21 and the second type doping semiconductor layer 23 are formed in the second type doping semiconductor layer
Contact layer 24 and an electrode unit 25 of the transmission from extraneous electric energy to the luminescent layer 22 on 23.
The first type doping semiconductor layer 21 is formed in above the substrate 20 with Metalorganic chemical vapor deposition method, and with
N-shaped nitride semi-conductor material is constituted, and in first preferred embodiment, N-shaped nitride semi-conductor material is N-shaped gallium nitride
(GaN).Researcher of the first type doping semiconductor layer 21 in the field is commonly referred to as n-type doping semiconductor layer, therefore following
Claim the first type doping semiconductor layer 21 with 21 generation of n-type doping semiconductor layer.
The luminescent layer 22 is formed on the n-type doping semiconductor layer 21, and luminous energy is converted electrical energy into when receiving electric energy.
Particularly, which can be double heterojunction structures (double hetero-junction structure), single amount
Sub- well construction (single quantum well structure) or multiple quantum well construction (multiple quantum
Well structure), wherein multiple quantum well construction may include most barrier layer portions and most well layer portion, the resistance
Barrier layer portion is sequentially alternately stacked with well layer portion from the n-type doping semiconductor layer surface, wherein the barrier layer portion is nitrogen
Change gallium (gallium nitride, GaN), well layer portion is InGaN (indium gallium nitride, InGaN).
And the configuration mode between the well layer portion and barrier layer portion of the luminescent layer 22 has been to be familiar with known to those skilled in the art, herein
No longer add to repeat.
The second type doping semiconductor layer 23 is formed on the luminescent layer 22, and with Metalorganic chemical vapor deposition method shape
At in the surface of the luminescent layer 22 far from the n-type doping semiconductor layer 21, and constituted with p-type nitride semi-conductor material,
In first preferred embodiment, p-type nitride semi-conductor material is p-type gallium nitride.Second type doping semiconductor layer 23 is in the neck
The researcher in domain is commonly referred to as p-type doping semiconductor layer, therefore claims second type to adulterate with 23 generation of p-type doping semiconductor layer below
Semiconductor layer 23.
It is worth noting that, the above-mentioned n-type doping semiconductor layer 21, the luminescent layer 22 and the p-type doping semiconductor layer
23 are all made of gallium nitride base (GaN Based) main material, and n-type doping semiconductor layer 21, the luminescent layer 22 and
The p-type doping semiconductor layer 23 is the solid form of monocrystalline (single crystal), and its Lattice System is all hexagonal crystal
It is (hexagonal system).
The contact layer 24 is transparent and electrically conductive, and is formed in the p-type doping with Metalorganic chemical vapor deposition method and partly leads
Far from the surface of the n-type doping semiconductor layer 21 in body layer 23, which includes most a from the p-type doping semiconductor layer
The island structure 241 that 23 surface protrudes out.
The contact layer 24 is constituted with semiconductor material, which is the solid form of monocrystalline, and the Lattice System is
Orthorhombic system, the composition of the contact layer 24 can be InyGa1-yOxN1-x, wherein 1,0 x≤1 < 0 < y <.As x=1, the contact
The composition of layer 24 is InyGa1-yO, wherein 0 < y < 1.
Refering to Fig. 3, Fig. 4, which is respectively actually to measure the concrete example completed according to the preferred embodiment for cooperation
24 analysis of components figure of contact layer.First this is analyzed by the Energy Analyzer (EDS) that label is JEOL and model JSM-6700F to connect
The chemical analysis (such as Fig. 3) that contact layer 24 has, recycle each chemical analysis peak value (peak) calculate obtain as shown in Figure 4 respectively at
The weight percent of part.
From attached drawing, it can be seen that, which is at least formed with three kinds of indium, gallium, oxygen element combinations, and is computed
Afterwards, it is 77.97wt%, gallium 16.36wt%, oxygen 5.67wt% that the weight percent of each element, which is about indium,.
Both contact layer 24 and the p-type doping semiconductor layer 23 of the invention are all the solid forms of monocrystalline, so the two
Between material compatibility it is high.Therefore, the adhesion between the contact layer 24 and the p-type doping semiconductor layer is good.
Furthermore since the contact layer 24 is made of conductive material, thus when electric current flows through the contact layer 24 compared with
To be smooth, and there is more preferably electric conductivity.In the preferred embodiment, the structure for finding the contact layer 24 by electron microscope is
Orthorhombic system is bonded mode at regularly arranged atom really, and is easier to pass through for hole, and then have the good spy of electric conductivity
Property.
Again because the contact layer 24 includes most island structures 241, the island structure 241 of the contact layer 24 can increase vertically
The efficiency of the electric current transmitting in direction, and preferably, Metalorganic chemical vapor deposition method suitably form size less than 300nm or
The island structure of low concentration, and the electric current that island structure of the size greater than 30nm can more effectively increase vertical direction passes
The efficiency passed.It is thus preferable to the average diameter width of each island structure 241 is 30nm~300nm, each island structure 241
Average height is 10nm~20nm, and the spacing of two adjacent island structures 241 is greater than 100nm.
The electrode unit 25 includes one and is located at together with 21 electrical connection of n-type doping semiconductor layer and with the luminescent layer 22
The second electrode 252 of the first electrode 251 on one surface and one and 24 electrical connection of contact layer constitute shining for lateral type
Element.
When the first electrode 251, second electrode 252 match transmission from extraneous electric energy, electric energy is via the contact
Layer 24, the n, p-type doping semiconductor layer 21,23 are sent to the luminescent layer 22 and convert electrical energy into luminous energy and shine, and due to this
The electric conductivity of contact layer 24 is good, and the luminescent layer 22 is also rapidly reached for electric current, further increase electron hole pair it is compound and
Generate the probability of light, and then the effectively internal quantum of lift elements.
And particularly, light-emitting component of the present invention can also be come in addition to being applicable to general packaged type in a manner of flip
Encapsulation.
Refering to Fig. 5, need to propose explanation, the contact layer 24 of aforementioned present invention preferred embodiment can with as shown in figure 5,
The layer body 242 being formed on the p-type doping semiconductor layer 23 including one layer.The layer body 242 of the contact layer 24 is in addition to providing and the p
Between type doping semiconductor layer 23 outside good Ohmic contact, also due to the adhesion between the p-type doping semiconductor layer 23 is good, because
The uniformity coefficient of electric current horizontal proliferation can be substantially improved in this.Again or as shown in fig. 6, the contact layer 24 further includes most intervals
The island structure 241 that ground is protruded out from this layer of body 242 toward separate 23 direction of p-type doping semiconductor layer, that is, the contact layer 24
Including one layer of body 242, and the most island structures 241 formed from this layer of 242 surface of body, and it is uniform to reach transverse current whereby
Diffusion, while the also good characteristic of the electric current transmission efficiency with vertical direction.
Refering to Fig. 7, it should be noted that, the present invention also may include one layer of transparency conducting layer 26 for covering the contact layer 24,
Transparency conducting layer 26 is arranged again with light-emitting component illustrated by above-mentioned Fig. 6 herein to explain, which transparent leads with this
Electric layer 26 links, which is electrically connected through the transparency conducting layer 26 with the electrode unit 25.It transparent is led by this
Electric layer 26 and the contact layer 24 are cooperatively more uniformly sent to the luminescent layer 22 for the electric current of the electrode unit 25.
The transparency conducting layer 26 is constituted using metal oxide or metallic film as main material, wherein metal oxide can
Selected from indium tin oxide (indium tin oxide, ITO), indium-zinc oxide (indium zinc
Oxide, IZO), indium tin zinc oxide (indium tin zinc oxide, ITZO), zinc oxide (zinc
Oxide), aluminium tin-oxide (aluminum tin oxide, ATO), Al-Doped ZnO (aluminum zinc oxide,
AZO), cadmium indium oxide (cadmium indium oxide, CIO), cadmium zinc oxide (cadmium zinc
Oxide, CZO), gallium zinc oxide (GZO) and tin oxyfluoride (FTO) and one group above-mentioned is combined into material and constituted；And metal
Film can free nickel (Ni), golden (Au) and one group above-mentioned be combined into material and constituted.Preferably, the transparency conducting layer 26 is selected from
Indium tin oxide, Al-Doped ZnO, indium-zinc oxide and a combination above-mentioned.
And should be noted that herein, the Lattice System of the transparency conducting layer 26 is cubic system (cubic system)；
And the transparency conducting layer 26 is the solid form of polycrystalline (polycrystalline) or amorphous (amorphous).
In the preferred embodiment, which is by taking indium tin oxide (ITO) as an example, but not with this
It is limited.
In addition, it is noted that contact layer 24 of the invention can also be applied to the light-emitting component of vertical-type.Refering to Fig. 8,
When the first electrode 251 of electrode unit 25 is configured at the lower section (side i.e. far from luminescent layer 22) of n-type doping semiconductor layer 21,
The light-emitting component for constituting vertical-type, is the hair simply changed with above-mentioned light-emitting component shown in Fig. 7 for vertical-type in this attached drawing
Optical element explains.
The preferred embodiment of aforementioned present invention light-emitting component, after the explanation by following production method, when can be more clear
Chu is understood.
Refering to Fig. 2, Fig. 9, the production method of the preferred embodiment of light-emitting component of the present invention includes an epitaxy step 31, and
One electrode setting steps 32.
Firstly, carrying out the epitaxy step 31, six sequentially are formed on the substrate 20 with Metalorganic chemical vapor deposition method
One layer of first type doping semiconductor layer, 21, one layers of luminescent layer 22 and one layer of second type doping semiconductor layer 23 and one of prismatic crystal system
The rhombic contact layer 24 of layer.
The first type doping semiconductor layer 21, luminescent layer 22 and second type doping semiconductor layer 23 in the epitaxy step 31
It is made of gallium nitride base main material.And the Formula I n of the contact layer 24 in the epitaxy step 31yGa1-yOxN1-x,
In, 1,0 x≤1 < 0 < y <.Above-mentioned the first type doping semiconductor layer 21, luminescent layer 22, second type doping semiconductor layer 23 with
And contact layer 24 is the crystal form of monocrystalline.
The generation type of contact layer 24 in the epitaxy step 31 is the chamber in Metalorganic chemical vapor deposition reactor
The trimethyl gallium ((CH as gallium source is imported in body3)3Ga or Trimmethyl Ga, abbreviation TMGa), as the trimethyl in indium source
Indium ((CH3)3In or Trimmethyl In, abbreviation TMIn), as the oxycompound of oxygen source, and as the nitrogen (N of carrier2),
It is made again with Metalorganic chemical vapor deposition method.The oxycompound is selected from water (H2O), oxygen (O2), carbon dioxide (CO2), an oxygen
Change carbon (CO) and one group above-mentioned is combined into material and is constituted.
And it should be noted that, which by control cavity medium temperature degree, can be passed through according to required kenel
Airflow rate, or the time of deposition form the island structure 241 and this layer of body 242 being intervally installed, and with this compared with
The average diameter width of preferable each island structure 241 obtained by the production method of good embodiment is 30nm~300nm, each island
The average height of structure 241 is 10nm~20nm, and the spacing of two adjacent island structures 241 is greater than 100nm.
Then, the electrode setting steps 32 are carried out, is formed and is adulterated respectively with the first type doping semiconductor layer 21, second type
Semiconductor layer 23 is electrically connected and the transmittable electrode unit 25 from extraneous electric energy to the luminescent layer.
In more detail, which is to mix respectively at the first type doping semiconductor layer 21 with the second type
The first electrode 251 and the second electrode 252 are formed on miscellaneous semiconductor layer 23, the first electrode 251 and the second electrode 252 are total
It is same to constitute the electrode unit 25.
Above-mentioned production method utilizes the oxidiferous gas in control Metalorganic chemical vapor deposition reactor
Type and flow velocity when reacting, then cooperate the TMGa as gallium source, as the starting material of the TMIn in indium source etc., with the intracorporal temperature of chamber
Degree and pressure, and transparent light-permeable and high conductive contact layer 24 are constituted in 23 top surface of second type doping semiconductor layer,
Overcome that adhesion is bad between current indium tin oxide and second type doping semiconductor layer 23 and causes contact resistance is high to ask whereby
Topic.
0 and cooperate Fig. 7 refering to fig. 1, the production method of the another preferred embodiment of light-emitting component of the present invention can be wrapped further
The transparency conducting layer forming step 33 carried out before the electrode setting steps 32 containing one, is existed using the method for physical vapour deposition (PVD)
24 surface of contact layer forms the transparency conducting layer 26 being made of using metal oxide or metallic film main material, then may be used
Light-emitting component as shown in Figure 7 is produced, is formed to have between the second type doping semiconductor layer 24 and the second electrode 252 and is somebody's turn to do
The light-emitting component of contact layer 24 and the transparency conducting layer 26.
The production method of the preferred embodiment by transparent contact layer 24 and second type doping semiconductor layer 23 attachment
Property good and contact layer 24 Lattice System be orthorhombic system and have good electric conductivity, then cooperate transparency conducting layer 26 by electric current
Horizontal proliferation, and reach current distribution more evenly, so that the internal quantum of light-emitting component effectively increases, and then significant
Lift elements whole lighting efficiency.
In conclusion the present invention is set to the p-type doping semiconductor layer 23 and electrode list in rhombic contact layer 24
Between member 25, and has preferable electric conductivity, and transparency conducting layer 26 is directly relatively set to 23 He of p-type doping semiconductor layer at present
Contact resistance between electrode unit 25 is low, overcomes adhesion between previous transparency conducting layer 26 and p-type doping semiconductor layer 23 not
The fast low problem of good and hole rate, and then increase internal quantum and Integral luminous brightness, so the present invention can be reached really
Purpose.
Claims (11)
1. a kind of light-emitting component, characterized by comprising:
One first type doping semiconductor layer；
One luminescent layer is set on the first type doping semiconductor layer；
One second type doping semiconductor layer is set on the luminescent layer and with the first type doping semiconductor layer at opposite-sign；
One contact layer, chemical formula InyGa1-yOxN1-x, wherein 1,0 x≤1 < 0 < y <, and it is set to second type doping half
In conductor layer；
One conductive layer is arranged on the contact layer, and the material of the conductive layer includes metallic film；And
One electrode unit is transmitted from extraneous electric energy to the luminescent layer；
The Lattice System of the contact layer is orthorhombic system.
2. light-emitting component according to claim 1, it is characterised in that: the first type doping semiconductor layer, the luminescent layer, with
And the second type doping semiconductor layer is made of gallium nitride base main material.
3. light-emitting component according to claim 1, it is characterised in that: the contact layer includes multiple from second type doping half
The island structure that conductor layer protrudes outward.
4. light-emitting component according to claim 1, it is characterised in that: the metallic film includes nickel, gold or previous materials
Combination.
5. a kind of light-emitting component, characterized by comprising:
One first type doping semiconductor layer；
One luminescent layer is set on the first type doping semiconductor layer；
One second type doping semiconductor layer, is set on the luminescent layer；
One contact layer is set on the second type doping semiconductor layer, which includes InyGa1-yO and/or InyGa1- yOxN1-x；The InyGa1-yIn O, 0 < y < 1；The InyGa1-yOxN1-xIn, 1,0 x≤1 < 0 < y <；
One first electrode is electrically connected the first type doping semiconductor layer；And
One second electrode is electrically connected the second type doping semiconductor layer；
The Lattice System of the contact layer is orthorhombic system.
6. light-emitting component according to claim 5, it is characterised in that: the light-emitting component also includes to be arranged on the contact layer
A conductive layer, the material of the conductive layer includes metal oxide or metallic film.
7. light-emitting component according to claim 6, it is characterised in that: the second electrode is electrically connected through the conductive layer should
Contact layer and the second type doping semiconductor layer.
8. light-emitting component according to claim 5, it is characterised in that: the contact layer includes multiple from second type doping half
The island structure that conductor layer protrudes outward.
9. light-emitting component according to claim 5, it is characterised in that: the first type doping semiconductor layer, the luminescent layer, with
And the second type doping semiconductor layer is made of gallium nitride base main material.
10. light-emitting component according to claim 6, it is characterised in that: the metal oxide includes indium tin oxide, indium zinc
Oxide, indium tin zinc oxide, zinc oxide, aluminium tin-oxide, Al-Doped ZnO, cadmium indium oxide, cadmium zinc oxide, gallium zinc oxygen
The combination of compound and tin oxyfluoride or previous materials.
11. light-emitting component according to claim 6, it is characterised in that: the metallic film includes nickel, gold or previous materials
Combination.
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| TW101118956A TW201349569A (en) | 2012-05-28 | 2012-05-28 | Light-emitting component and method for manufacturing the same |
| CN201210259330.3A CN103456858B (en) | 2012-05-28 | 2012-07-20 | Light emitting element and method for manufacturing the same |
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| CN100401539C (en) * | 2003-11-14 | 2008-07-09 | 三星电子株式会社 | Nitride-based light-emitting device and method of manufacturing the same |
| CN102956781A (en) * | 2011-08-31 | 2013-03-06 | 新世纪光电股份有限公司 | Light-emitting element and manufacturing method thereof |
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| CN2760762Y (en) * | 2004-04-08 | 2006-02-22 | 炬鑫科技股份有限公司 | Gallium nitride LED structure |
| US8674375B2 (en) * | 2005-07-21 | 2014-03-18 | Cree, Inc. | Roughened high refractive index layer/LED for high light extraction |
| CN101728462A (en) * | 2008-10-17 | 2010-06-09 | 先进开发光电股份有限公司 | Multi-wavelength light-emitting diode and production method thereof |
| JP2011009502A (en) * | 2009-06-26 | 2011-01-13 | Showa Denko Kk | Light emitting element and method of manufacturing the same, lamp, electronic apparatus, and mechanical apparatus |
| JPWO2012002580A1 (en) * | 2010-07-01 | 2013-09-02 | シチズンホールディングス株式会社 | LED light source device and manufacturing method thereof |
| TW201349569A (en) * | 2012-05-28 | 2013-12-01 | Genesis Photonics Inc | Light-emitting component and method for manufacturing the same |
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| CN102956781A (en) * | 2011-08-31 | 2013-03-06 | 新世纪光电股份有限公司 | Light-emitting element and manufacturing method thereof |
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Effective date of registration: 20240116 Address after: Tokushima County, Japan Patentee after: NICHIA Corp. Address before: Taiwan, China Tainan, south of science and Technology Industrial Park, No. 5, No. three Patentee before: Genesis Photonics Inc. |