TWI473301B - - Google Patents

Info

Publication number
TWI473301B
TWI473301B TW101118956A TW101118956A TWI473301B TW I473301 B TWI473301 B TW I473301B TW 101118956 A TW101118956 A TW 101118956A TW 101118956 A TW101118956 A TW 101118956A TW I473301 B TWI473301 B TW I473301B
Authority
TW
Taiwan
Application number
TW101118956A
Other versions
TW201349569A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to TW101118956A priority Critical patent/TWI473301B/zh
Priority claimed from US13/568,399 external-priority patent/US8766293B2/en
Publication of TW201349569A publication Critical patent/TW201349569A/en
Application granted granted Critical
Publication of TWI473301B publication Critical patent/TWI473301B/zh

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40Materials therefor
    • H01L33/42Transparent materials
TW101118956A 2012-05-28 2012-05-28 TWI473301B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW101118956A TWI473301B (en) 2012-05-28 2012-05-28

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
TW101118956A TWI473301B (en) 2012-05-28 2012-05-28
CN201610668838.7A CN106057994B (en) 2012-05-28 2012-07-20 Light-emitting component
CN201210259330.3A CN103456858B (en) 2012-05-28 2012-07-20 Light-emitting component and preparation method thereof
US13/568,399 US8766293B2 (en) 2011-08-08 2012-08-07 Light-emitting device and method for manufacturing the same

Publications (2)

Publication Number Publication Date
TW201349569A TW201349569A (en) 2013-12-01
TWI473301B true TWI473301B (en) 2015-02-11

Family

ID=49739020

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101118956A TWI473301B (en) 2012-05-28 2012-05-28

Country Status (2)

Country Link
CN (2) CN103456858B (en)
TW (1) TWI473301B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI473301B (en) * 2012-05-28 2015-02-11

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050199895A1 (en) * 2004-03-12 2005-09-15 Samsung Electronics Co., Ltd. Nitride-based light-emitting device and method of manufacturing the same
US20070018183A1 (en) * 2005-07-21 2007-01-25 Cree, Inc. Roughened high refractive index layer/LED for high light extraction
TW201110413A (en) * 2009-06-26 2011-03-16 Showa Denko Kk Light emitting device, production method, lamp, electronic equipment and mechanical equipment

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100647279B1 (en) * 2003-11-14 2006-11-17 광주과학기술원 light emitting device and method of manufacturing thereof
CN2760762Y (en) * 2004-04-08 2006-02-22 炬鑫科技股份有限公司 Gallium nitride LED structure
CN101728462A (en) * 2008-10-17 2010-06-09 先进开发光电股份有限公司 Multi-wavelength light-emitting diode and production method thereof
US9159892B2 (en) * 2010-07-01 2015-10-13 Citizen Holdings Co., Ltd. LED light source device and manufacturing method for the same
CN102956781B (en) * 2011-08-31 2015-03-11 新世纪光电股份有限公司 Light-emitting element and manufacturing method thereof
TWI473301B (en) * 2012-05-28 2015-02-11

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050199895A1 (en) * 2004-03-12 2005-09-15 Samsung Electronics Co., Ltd. Nitride-based light-emitting device and method of manufacturing the same
US20070018183A1 (en) * 2005-07-21 2007-01-25 Cree, Inc. Roughened high refractive index layer/LED for high light extraction
TW201110413A (en) * 2009-06-26 2011-03-16 Showa Denko Kk Light emitting device, production method, lamp, electronic equipment and mechanical equipment

Also Published As

Publication number Publication date
CN103456858B (en) 2016-09-14
CN106057994B (en) 2019-03-15
CN103456858A (en) 2013-12-18
CN106057994A (en) 2016-10-26
TW201349569A (en) 2013-12-01

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