CN106030772B - 晶片缺口检测 - Google Patents

晶片缺口检测 Download PDF

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Publication number
CN106030772B
CN106030772B CN201580008392.9A CN201580008392A CN106030772B CN 106030772 B CN106030772 B CN 106030772B CN 201580008392 A CN201580008392 A CN 201580008392A CN 106030772 B CN106030772 B CN 106030772B
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China
Prior art keywords
wafer
notch
image
orientation
images
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CN201580008392.9A
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Chinese (zh)
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CN106030772A (zh
Inventor
B·埃弗拉蒂
N·比沙拉
A·西姆金
Y·伊什-沙洛姆
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KLA Corp
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KLA Tencor Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/50—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment
    • H10P72/53—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment using optical controlling means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/002—Measuring arrangements characterised by the use of optical techniques for measuring two or more coordinates
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T3/00—Geometric image transformations in the plane of the image
    • G06T3/20—Linear translation of whole images or parts thereof, e.g. panning
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/60—Analysis of geometric attributes
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V10/00—Arrangements for image or video recognition or understanding
    • G06V10/40—Extraction of image or video features
    • G06V10/42—Global feature extraction by analysis of the whole pattern, e.g. using frequency domain transformations or autocorrelation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H10W46/201—Marks applied to devices, e.g. for alignment or identification located on the periphery of wafers, e.g. orientation notches or lot numbers
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/20—Special algorithmic details
    • G06T2207/20048—Transform domain processing
    • G06T2207/20056—Discrete and fast Fourier transform, [DFT, FFT]
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Pathology (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Chemical & Material Sciences (AREA)
  • Geometry (AREA)
  • Quality & Reliability (AREA)
  • Signal Processing (AREA)
  • Multimedia (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Image Processing (AREA)
CN201580008392.9A 2014-02-12 2015-02-10 晶片缺口检测 Active CN106030772B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201461939131P 2014-02-12 2014-02-12
US61/939,131 2014-02-12
PCT/US2015/015270 WO2015123222A1 (en) 2014-02-12 2015-02-10 Wafer notch detection

Publications (2)

Publication Number Publication Date
CN106030772A CN106030772A (zh) 2016-10-12
CN106030772B true CN106030772B (zh) 2020-04-14

Family

ID=53800566

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201580008392.9A Active CN106030772B (zh) 2014-02-12 2015-02-10 晶片缺口检测

Country Status (6)

Country Link
US (1) US10366483B2 (cg-RX-API-DMAC10.html)
JP (1) JP6521988B2 (cg-RX-API-DMAC10.html)
KR (1) KR102175021B1 (cg-RX-API-DMAC10.html)
CN (1) CN106030772B (cg-RX-API-DMAC10.html)
TW (1) TWI649553B (cg-RX-API-DMAC10.html)
WO (1) WO2015123222A1 (cg-RX-API-DMAC10.html)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10354373B2 (en) * 2017-04-26 2019-07-16 Kla-Tencor Corporation System and method for photomask alignment and orientation characterization based on notch detection
US11929277B2 (en) * 2019-09-06 2024-03-12 Kabushiki Kaisha Yaskawa Denki Wafer pre-aligner and method of pre-aligning wafer
CN120543484A (zh) * 2025-05-06 2025-08-26 东方晶源微电子科技(北京)股份有限公司 晶圆缺口顶点位置的确定方法、装置、设备、介质及产品

Citations (3)

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US20090161097A1 (en) * 2007-12-19 2009-06-25 Vistec Semiconductor Systems Gmbh Method for optical inspection, detection and visualization of defects on disk-shaped Objects
US20110260057A1 (en) * 2008-10-24 2011-10-27 Tadashi Otaka Charged particle beam apparatus
CN102347224A (zh) * 2010-08-02 2012-02-08 北京中科信电子装备有限公司 一种注入机用晶片缺口定位装置

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US5381004A (en) 1993-08-31 1995-01-10 Applied Materials, Inc. Particle analysis of notched wafers
US5825913A (en) * 1995-07-18 1998-10-20 Cognex Corporation System for finding the orientation of a wafer
JPH11121589A (ja) * 1997-10-09 1999-04-30 Nikon Corp 搬送方法および搬送装置、および露光装置
JPH11317439A (ja) * 1998-05-01 1999-11-16 Nec Corp 位置決め装置
JP2000031245A (ja) * 1998-07-08 2000-01-28 Kobe Steel Ltd ウェーハノッチ位置検出装置
US6559457B1 (en) * 2000-03-23 2003-05-06 Advanced Micro Devices, Inc. System and method for facilitating detection of defects on a wafer
US20050174583A1 (en) 2000-07-06 2005-08-11 Chalmers Scott A. Method and apparatus for high-speed thickness mapping of patterned thin films
US6327517B1 (en) 2000-07-27 2001-12-04 Applied Materials, Inc. Apparatus for on-the-fly center finding and notch aligning for wafer handling robots
US6992482B2 (en) * 2000-11-08 2006-01-31 Jentek Sensors, Inc. Magnetic field sensor having a switchable drive current spatial distribution
US6440821B1 (en) 2001-02-14 2002-08-27 Advanced Micro Devices, Inc. Method and apparatus for aligning wafers
JP2002280287A (ja) 2001-03-19 2002-09-27 Nikon Corp 位置検出方法、位置検出装置、露光方法、露光装置、及びデバイス製造方法
JP4947248B2 (ja) 2001-09-14 2012-06-06 Ｄｏｗａエレクトロニクス株式会社 ノッチ付き化合物半導体ウエハ
US6784071B2 (en) 2003-01-31 2004-08-31 Taiwan Semiconductor Manufacturing Company, Ltd. Bonded SOI wafer with <100> device layer and <110> substrate for performance improvement
WO2005008735A2 (en) 2003-07-14 2005-01-27 August Technology Corporation Photoresist edge bead removal measurement
US7280200B2 (en) 2003-07-18 2007-10-09 Ade Corporation Detection of a wafer edge using collimated light
JP4296885B2 (ja) * 2003-09-17 2009-07-15 オムロン株式会社 円形物におけるマーク検出方法、ノッチ検出方法、半導体ウェーハの向き検査方法、および半導体ウェーハの向き検査装置
JP4522360B2 (ja) * 2005-12-02 2010-08-11 日東電工株式会社 半導体ウエハの位置決定方法およびこれを用いた装置
WO2008136423A1 (ja) 2007-04-27 2008-11-13 Shibaura Mechatronics Corporation 半導体ウェーハ処理装置、基準角度位置検出方法及び半導体ウェーハ
JP5066393B2 (ja) * 2007-06-06 2012-11-07 株式会社日立ハイテクノロジーズ 異物・欠陥検査・観察システム
JP2009096698A (ja) 2007-10-19 2009-05-07 Toshiba Corp ウェーハ及びその製造方法
JP5469839B2 (ja) 2008-09-30 2014-04-16 株式会社日立ハイテクノロジーズ 物体表面の欠陥検査装置および方法
JP5477133B2 (ja) * 2010-04-09 2014-04-23 日新イオン機器株式会社 ウェーハハンドリング方法およびイオン注入装置
JP5534926B2 (ja) 2010-05-06 2014-07-02 リンテック株式会社 位置検出装置及びこれを用いたアライメント装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090161097A1 (en) * 2007-12-19 2009-06-25 Vistec Semiconductor Systems Gmbh Method for optical inspection, detection and visualization of defects on disk-shaped Objects
US20110260057A1 (en) * 2008-10-24 2011-10-27 Tadashi Otaka Charged particle beam apparatus
CN102347224A (zh) * 2010-08-02 2012-02-08 北京中科信电子装备有限公司 一种注入机用晶片缺口定位装置

Also Published As

Publication number Publication date
CN106030772A (zh) 2016-10-12
JP2017508285A (ja) 2017-03-23
JP6521988B2 (ja) 2019-05-29
KR20160120309A (ko) 2016-10-17
TW201534895A (zh) 2015-09-16
US10366483B2 (en) 2019-07-30
US20160086325A1 (en) 2016-03-24
KR102175021B1 (ko) 2020-11-06
TWI649553B (zh) 2019-02-01
WO2015123222A1 (en) 2015-08-20

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