CN106019496A - Light source packaging structure, and positioning and coupling method thereof - Google Patents
Light source packaging structure, and positioning and coupling method thereof Download PDFInfo
- Publication number
- CN106019496A CN106019496A CN201610379414.9A CN201610379414A CN106019496A CN 106019496 A CN106019496 A CN 106019496A CN 201610379414 A CN201610379414 A CN 201610379414A CN 106019496 A CN106019496 A CN 106019496A
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- Prior art keywords
- lens
- chip
- silicon optical
- optical chip
- heat sink
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4296—Coupling light guides with opto-electronic elements coupling with sources of high radiant energy, e.g. high power lasers, high temperature light sources
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
- G02B6/4214—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical element having redirecting reflective means, e.g. mirrors, prisms for deflecting the radiation from horizontal to down- or upward direction toward a device
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
- G02B6/4215—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical elements being wavelength selective optical elements, e.g. variable wavelength optical modules or wavelength lockers
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4219—Mechanical fixtures for holding or positioning the elements relative to each other in the couplings; Alignment methods for the elements, e.g. measuring or observing methods especially used therefor
- G02B6/4236—Fixing or mounting methods of the aligned elements
- G02B6/4244—Mounting of the optical elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4251—Sealed packages
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4266—Thermal aspects, temperature control or temperature monitoring
- G02B6/4268—Cooling
- G02B6/4272—Cooling with mounting substrates of high thermal conductivity
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Optical Couplings Of Light Guides (AREA)
Abstract
The invention provides a light source packaging structure, and a positioning and coupling method thereof. The light source packaging structure comprises a sealing box cover (101), a C lens (102), a silicon based heat sink (103), a laser chip (104), an isolator assembly (106), and a silicon light chip (107). The laser chip (104), a collimating lens (105), and the isolator assembly (106) are sequentially disposed on the silicon based heat sink (103). The C lens (102) is aligned with the grating coupler (110) of the silicon light chip (107) in a fixed and coupled manner. The sealed box cover (101) is provided with an inclined inner wall used to reflect light emitted by the laser chip (104) to the C lens, and the lower surface of the C lens (102) is provided with a polishing surface matched with the incident angle of the reflected light. The side of the C lens (102) inclined toward the direction away from the silicon based heat sink (103), and the optical axis of the C lens (102) is consistent with the transmission direction of the light, and the main light is superposed with the optical axis. A coupling structure is compact, and position tolerance is large.
Description
Technical field
The present invention relates to a kind of method for packing for silicon optical chip and structure, particularly to one based on grating
The illuminating source packaging structure of the silicon optical chip of bonder and location, coupling process, the invention belongs to photoelectricity subset
Become device arts.
Background technology
The fiber optic communication revolutionary development that has been the transmission belt of information, the photoelectric device in fiber optic communication is also toward more
Little, more integrated, more inexpensive direction is developed, and it is one of photoelectric device study hotspot that light is electrically integrated chip.Integrated
Circuit chip typically uses complementary metal oxide semiconductors (CMOS) integrated technique to make on silicon chip, has had very
Ripe processing technology, some manufacturers are by waveguide fabrication at silicon-based substrate top now, are used for transmitting light path,
So IC chip and optical chip being integrated on same silicon base chip, the present invention is referred to as silicon optical chip,
Silicon optical chip can realize Electric signal processing function such as electronic amplifier, digital signal processor etc., again can
Transmission light path, it is achieved the filtering of optical signal, beam splitting, the function such as modulation, the optoelectronic integration of height reduces
The volume of photoelectric device, reduces power consumption, cost etc., is with a wide range of applications.
Owing to the silicon in silicon optical chip belongs to indirect bandgap material, it is impossible to be enough in making light source, in order to solve
Silicon optical chip light source input problem, has producer to use III-V race's material to combine with silicon materials, utilizes mixing
Integrated technology makes LASER Light Source on silicon, but this technology there are disadvantages that, currently without commercialization
Change.Therefore, we typically use the mode of external light source to provide light source for silicon optical chip.
Silicon waveguide fabrication is at silicon optical chip top layer, and silicon waveguide is high due to silicon materials refractive index, and its mould field size is little,
Cannot directly couple with optical fiber or silicon based silicon dioxide wave.At present, more existing producers are by laser instrument core
Sheet is packaged into TO form (Transistor Outline, coaxial pipe cap encapsulates), is exported by polarization maintaining optical fibre, protects
Inclined optical fiber connector is fabricated to FA form and couples with silicon optical chip.This encapsulating structure, external light source TO encapsulates
Size is relatively big, and general without refrigeration design, and chip cooling is affected, and is not suitable for high power laser core
Sheet, it is impossible to make high power light source；The opal angle of the polarization maintaining optical fibre of its end FA to control +/-5 degree,
Operation easier is relatively big, and yield rate is low, and cost is high.
Providing the encapsulation design of some external light sources in United States Patent (USP) US8772704, what it was designed with is ball
The simple lens light path design scheme of lens or D lens is in simple lens light path design, higher in order to ensure
Coupling efficiency, needs accurately control object distance and image distance to realize the mould field of chip of laser and grating coupler
Joining and eliminate spherical aberration loss, this structure has higher requirement to chip of laser, lens location.
Summary of the invention
For the defect of prior art, the present invention proposes a kind of high-power external light source based on grating coupler
Encapsulating structure and localization method, coupling positioning method, coupled structure of the present invention is compact, and PT positional tolerance is big,
Passive coupling can be realized, it is provided that production efficiency, it is adaptable to batch production by making identification pattern method.
The technical scheme is that
A kind of illuminating source packaging structure for silicon optical chip, including sealing box cover, C lens, silica-based heat sink,
Chip of laser, isolator assemblies, silicon optical chip, described chip of laser, collimating lens, isolator group
Part be set in turn in silica-based heat sink on, described silica-based heat sink and C lens are arranged at described sealing box cover and silicon light
Chip is formed and seals in space, and described silicon optical chip includes that grating coupler, described C lens are fixed and coupled
In alignment with the grating coupler of silicon optical chip, it is anti-that sealing box cover is provided with the light sent by described chip of laser
Being incident upon the tilt internal wall of C lens, C lens lower surface is provided with and reflects the polishing that angle of incidence of light matches
Face, C lens deflection away from silica-based heat sink side towards the inwall inclined-plane of sealing box cover, C lens axis with
Light transmission direction is consistent and chief ray and optical axis coincidence.
Described sealing box cover inwall angle, θ is 47 °, and < θ < 60 °, C lens lower surface polishes angleUse
It is provided with collimating lens between described chip of laser, isolator assemblies.
The inwall bevel angle of described sealing box cover is 54.74 degree, and described C lens lower surface polishing angle is
70.52 degree.
The inwall inclined-plane of described sealing box cover is provided with gold-plated or reflectance coating.
Described C convex lens surface sets up, and this convex surface is coated with anti-reflection film, the geometry that C lens lower surface is oval
Center is aligned coincident with grating coupler.
Being provided with a circle Gold plated Layer bottom described sealing box cover, silicon optical chip is correspondingly arranged with this Gold plated Layer position
Having a circle Gold plated Layer, in the Gold plated Layer of described silicon optical chip, deposition has one layer of golden tin solder, by welding by institute
State sealing box cover and seal fixing with silicon optical chip.
Described C lens be directly arranged at silicon optical chip or be arranged at silica-based heat sink on.
A kind of illuminating source packaging structure for silicon optical chip, described silica-based heat sink on be provided with fixing collimating lens,
The square groove of isolator assemblies.
Including C lens, silica-based heat sink, chip of laser, isolator assemblies, silicon optical chip, described laser
Device chip, collimating lens, isolator assemblies be set in turn in silica-based heat sink on, described silicon optical chip includes light
Grid bonder, described C lens are fixed and are coupled and aligned in the grating coupler of silicon optical chip, described laser instrument
The light path that chip sends is provided with by the reflecting prism of luminous reflectance to C lens, described reflecting prism angle of reflection
θ is 47 °, and < θ < 60 °, C lens lower surface is provided with polishing angleBurnishing surface.
Described reflecting prism uses trapezoidal reflecting prism, described trapezoidal reflecting prism reflecting surface is provided with gold-plated
Or reflectance coating.
The passive location method of the described illuminating source packaging structure for silicon optical chip, on silica-based heat sink chip,
Make the registration pattern of chip of laser, this registration pattern use the square frame big with chip of laser etc. or
Mark 4 cross hairs at 4 angles respectively；On silicon optical chip, make C lens, silica-based heat sink determining
Bit patterns, the oval logo that the registration pattern employing of described C lens and C lens lower surface etc. are big；Described silicon
Base is heat sink, and registration pattern uses the square frame big with silica-based heat sink grade or marks 4 ten of 4 angles respectively
Wordline.
The active coupling process of the described illuminating source packaging structure for silicon optical chip, comprises the steps: 1)
C lens are bonded on grating coupler；2) a trapezoidal reflecting prism is bonded in by C lens, trapezoidal reflection
Brigadier's light path is turned to by the reflecting surface of prism with C convex lens surface；3) clamping band chip of laser is silica-based heat sink,
Powered to chip of laser by external probe clamp；4) with the output electric current of source table monitoring silicon optical chip, really
Determine the light intensity that the grating coupler of silicon optical chip receives；5) regulate silica-based heat sink position until source meter reading
General goal；6) some adhesive curing is silica-based heat sink, and active coupling regulation completes；7) trapezoidal reflecting prism is removed,
Sealing box cover is welded and fixed to silicon optical chip corresponding position, and whole laser light source has encapsulated.
The advantage of apparatus of the present invention is:
1) present invention uses design of Sealing Structure, it is possible to effective isolation inner laser device chip and outside moisture,
Improve chip of laser service life；
2) present invention uses twin-lens light channel structure to design, and C lens are directly bonded on grating coupler,
Reducing chip of laser, silica-based heat sink paster required precision, coupled structure has bigger range of tolerable variance；
3) present invention silica-based heat sink can effectively to chip of laser dispel the heat, encapsulating structure is applicable to high-power
Chip of laser；
4) present invention silica-based heat sink on be provided with groove, for collimating lens, isolator assemblies positions, and simplifies
Processing technology；
5) sealing box cover inwall inclined-plane of the present invention is 54.74 degree of angles, and inclined-plane plated film (gold or reflectance coating) is used
In reflection light, directly use the reflection of sealing box cover inwall is designed to reduce the use of a reflecting prism,
Make whole encapsulating structure compacter；
6) present invention by registration pattern be designed to realize optical passive be directed at.
Accompanying drawing explanation
Fig. 1 is the first embodiment encapsulating structure figure of the present invention；
Fig. 2 is that the first embodiment of the present invention is without sealing box cover encapsulating structure figure；
Fig. 3 is the first embodiment generalized section of the present invention；
Fig. 4 is the second structural profile schematic diagram of the present invention；
Fig. 5 is that the present invention uses trapezoidal reflecting prism the third example structure figure unsealed instead；
Wherein
101: sealing box cover；102:C lens；
103: silica-based heat sink；104: chip of laser；
105: collimating lens；106: isolator assemblies；
107: silicon optical chip；108: silicon optical chip Gold plated Layer；
109: sealing box cover Gold plated Layer；110: grating coupler；
111:IC chip；112: trapezoidal reflecting prism；
Detailed description of the invention
Below in conjunction with accompanying drawing, the present invention is described in detail.
Apparatus of the present invention include sealing box cover 101, C lens 102, silica-based heat sink 103, chip of laser 104,
Collimating lens 105, isolator assemblies 106, silicon optical chip 107；Wherein, chip of laser 104, collimation
Lens 105, isolator assemblies 106 are arranged on silica-based heat sink 103, and silica-based heat sink 103 are arranged at silicon light
On chip 107.Silicon optical chip 107 includes that grating coupler 110, C lens 102 are bonded in by ultraviolet glue
Align on silicon optical chip 107 and with grating coupler 110, C lens 102 convex surface upwards, with silicon light core
Sheet 107 bonding lower surface polishing angle be 70.52 degree；Silicon optical chip 107 is outside silica-based heat sink 103
Enclose and be provided with a square Gold plated Layer 108, Gold plated Layer 108 has one layer of golden tin solder, Gold plated Layer 108
Shape and size are consistent with sealing box cover 101, seal for the positioning welding with sealing box cover 101.Now
The body of silicon optical chip 107 be equivalent to the box body that matches with sealing box cover 101, sealing box cover 101
To laser instrument being carried out the function that sealing turns to light path.Laser optical route chip of laser 104, collimation
Lens 105, silica-based heat sink the 103 of isolator assemblies 106 and C lens 102 combine, and seal
In lid 101, the inwall relative with C lens 102 is arranged to inclined-plane, and bevel angle is 54.74 degree, tiltedly
Face is gold-plated or reflectance coating, is used for reflecting light, the end that sealing box cover 101 contacts with silicon optical chip 107
Portion is provided with in one layer of Gold plated Layer 109, and silicon optical chip Gold plated Layer 108 deposition the golden stannum of one layer several microns
Solder, for sealing box cover 101 navigated in the Gold plated Layer 108 of silicon optical chip 107 and with silicon light core
Sheet 107 seals welding, ensures that the light sent by chip of laser 104 is through collimating thoroughly by above-mentioned design
Mirror 105 collimates, and after isolator assemblies 106, is entered by the inwall slant reflection of sealing box cover 101
C lens 102, and converged in the grating coupler 110 of silicon optical chip 107 by C lens 102, real
The light source couples of existing silicon optical chip 107.
As in figure 2 it is shown, be also integrated with IC chip 111 on silicon optical chip 107, IC chip 111 can be
It is separately provided outside sealing box cover 101.
As it is shown on figure 3, chip of laser 104 by conductive adhesive on silica-based heat sink 103, silica-based heat
It is designed with gold plated pads and gold thread pattern on heavy 103, for chip of laser 104 routing and power supply, silica-based
Heat sink 103 are bonded on silicon optical chip 107 with heat-conducting glue, in C lens 102 side, with C lens 102
Keep certain distance, on silica-based heat sink 103, be provided with 2 square grooves, be respectively used to place collimating lens
105 and isolator assemblies 106, after the optical signals collimating lens 105 that chip of laser 104 is launched expands,
By isolator assemblies 106, then arrive sealing box cover 101 inwall reflecting surface, be reflected and turn to C lens 102,
Converged to by C lens 102 in the grating coupler 110 of silicon optical chip 107.
In the present invention, silicon optical chip 107 is the coalition of a kind of integrated circuit and waveguide light path: waveguide light path and
Grating coupler 110 is positioned at silicon optical chip 107 surface, is connected with external optical signals for silicon optical chip 107
Transmission, grating coupler 110 is positioned on silicon optical chip 107, is shaped as just putting or being inverted sector, herein
Grating coupler 110 effect is the silicon ripple polarized light incident with special angle being coupled into silicon optical chip 107
In leading, after flashlight is coupled into grating coupler 110, will be transmitted by silicon waveguide, or partial wave
Process with ripple, silicon optical chip 107 inner high speed photodiode will be entered at waveguide end flashlight
In (Photodiode, PD), it is achieved light is to electricity transformation process, and PD both positive and negative polarity is arranged on silicon optical chip 107 pad
On；IC chip 111 is the synthesis of integrated circuit, can include manipulator, driver, amplifier, filter
Ripple devices etc., for processing the signal of telecommunication or controlling.
A circle Gold plated Layer 109 is had bottom quad seal lid 101.On silicon optical chip 107, with seal box
Cover 101 correspondence positions and be also equipped with a circle Gold plated Layer 108, and in Gold plated Layer, deposition has the gold of a layer several microns
Tin solder, for the heating welded seal of sealing box cover 101 with silicon optical chip 107, isolation is arranged at sealing
Chip of laser 104 within lid 101 and outside dampness, increase the use longevity of chip of laser 104
Life.Sealing box cover 101 inwall is gold-plated or reflectance coating, and inwall angle is θ degree, 47 ° < θ < 60 °.This
Invention combines sealing box cover actual fabrication technique, preferably sets θ=54.74 degree.Chip of laser 104
The light penetrated is after collimating lens 105 collimates, by isolator assemblies 106, in sealing box cover 101
Wall reflects, and is incident to C lens with the angle direction with vertical axis angle 19.48 degree (i.e. 2 θ-90 °)
In 102, hot spot is in C lens 102 finally converge to the grating coupler 110 of silicon optical chip 107.
C lens 102 are made by quartz or other glass materials, its lower surface and silicon optical chip 107
Bond together by ultraviolet glue.C lens 102 lower surface hasThe polishing angle of degree,With θ just like ShiShimonoseki
System:In the present invention, when θ=54.74 degree, can calculateDegree.C is saturating
Mirror 102 lower surface has the polishing angle of 70.52 degree, and its face type is an ellipse, ensures that C is saturating in bonding process
The geometric center of mirror 102 lower surface ellipse is aligned coincident with grating coupler 110.C lens 102 convex surface to
On, and convex surface is coated with anti-reflection film.It is to make C lens 102 inclined that C lens 102 bottom surface polishes 70.52 degree
To away from the silica-based side of heat sink 103 with the inwall inclined-plane towards sealing box cover 101, thus realize C lens
102 match convex surface facing with reflection angle of incidence of light, i.e. C lens 102 optical axis transmits direction one with light
Cause and chief ray and optical axis coincidence.After C lens 102 are bonding with silicon optical chip 107, sealed lid 101
The light of inwall reflection is incident in grating coupler 110 along C lens 102 optical axis, reduces aberration, reduces
Coupling loss.
The present invention provides the laser instrument coupling packaging structure of a kind of sealing, and laser instrument is positioned at sealing box cover and silicon light
In the sealing area formed after chip welding, isolation chip of laser and extraneous dampness, sealing box cover inclines
Tiltedly light path steering-effecting is played in medial wall.If chip of laser uses moisture resistance chip of laser or whole
Silicon optical chip encapsulates to the modular structure of other sealing, avoids the need for sealing laser instrument, now
Sealing box cover can be replaced to carry out light path reflection with trapezoidal reflecting prism to turn to and (trapezoidal reflecting prism is pasted onto
Original sealing box cover reflected light path position, removes sealing box cover), as shown in Figure 5.Trapezoidal reflecting prism reflects
Face is gold-plated or reflectance coating, Dove prism angle of reflection θ and C lens lower surface polish angleRelation is: It is also possible to by making big with trapezoidal reflecting prism bottom surface etc. or marking bottom surface 4
The identification pattern method of 4 crosses at individual angle realizes the passive location of trapezoidal reflecting prism.
It is provided with square groove on silica-based heat sink 103, in light path design, chip of laser 104 and collimation
Distance between lens 105 needs accurately to control.The groove position precision produced by techniques such as photoetching is high,
Collimating lens 105 is put in groove and can directly be positioned, it is ensured that chip of laser 104 and collimating lens 105
Coupling position required precision.Collimating lens 105 can be single convex or biconvex lens, it is possible to use ball
Lens, the two-sided needs of collimating lens 105 plates anti-reflection film.Isolator assemblies 106 is by analyzer, and faraday is brilliant
Body, half-wave plate forms, and after assembly is placed on collimating lens 105, is used for isolating in light path reflection light,
Avoid these light to enter in chip of laser 104, cause the power swing of chip of laser 104, isolation
Device assembly 106 is coated with anti-reflection film.Silica-based heat sink 103 are provided above with gold thread pattern and gold plated pads, are used for
Chip of laser 104 routing is powered.Silica-based heat sink 103 have good thermal diffusivity, it is possible to effectively will swash
The calorie spread of light device chip 104 is to silicon optical chip 107, then is conducted heat to box by silicon optical chip 107
External body, this effective heat dissipation design, it is possible to ensure that the present invention can be applied to high power laser chip
Encapsulation.
After chip of laser 104, collimating lens 105, isolator assemblies 106 bond on silica-based heat sink 103,
Can bond to, on silicon optical chip 107, concretely comprise the following steps: 1 silica-based heat sink 103 by active coupling scheme)
C lens 102 are bonded on silicon optical chip 107, the convex surface of C lens 102 upwards, oval several in bottom surface
What center is aligned coincident with grating coupler 110；2) a trapezoidal reflecting prism 112 is bonded in C lens
102 is other, and the reflecting surface of trapezoidal reflecting prism 112 is directed at C lens 102 convex surface, the most trapezoidal reflection rib
Mirror 112 plays interim replacement sealing box cover 101 in active alignment procedures and light path is carried out steering-effecting；3)
Silica-based heat sink the 103 of clamping band chip of laser 104, by external probe clamp to chip of laser 104
Power supply；4) with the output electric current of source table monitoring silicon optical chip 107, so that it is determined that the grating of silicon optical chip 107
The light intensity that bonder 110 receives；5) silica-based heat sink 103 positions are regulated, to source meter reading maximum, i.e.
Grating coupler 110 receives largest light intensity, and coupling loss is minimum；6) some adhesive curing silica-based heat sink 103,
Active coupling regulation completes；7) if using the laser instrument coupling package knot that the first embodiment of the present invention seals
Structure, just removes trapezoidal reflecting prism 112, the sealing box cover with reflecting slant is placed into silicon optical chip 107
On, sealing box cover Gold plated Layer 109 is aligned coincident with silicon optical chip Gold plated Layer 108, and heating makes silicon optical chip plate
In layer gold 108, gold tin solder melts, and sealing box cover 101 is welded on silicon optical chip 107, whole laser instrument
Light-source encapsulation completes.
In the present invention, light path design employs twin-lens coupling scheme, with traditional simple lens coupling scheme
Compare and improve coupling tolerance；C lens 102 are directly bonded on grating coupler 110, and whole optics is tied
Structure is compact, reliably, is suitable for batch production.Owing to optical texture has bigger coupling tolerance, whole coupling
Structure can be realized packaging passive alignment completely and couple by the design of mark, will largely improve making week
Phase, and yield rate.
In the present invention, it is also possible to by making registration pattern on silicon optical chip 107 and silica-based heat sink 103,
Realize product passive coupling to make, improve production efficiency.Can make and swash on silica-based heat sink 103 chips
The registration pattern of light device chip 104, patterns can be the square frame big with chip of laser 104 grade or
It is 4 cross hairs marking 4 angles respectively；C lens 102 can be made on silicon optical chip 107
Registration pattern, patterns is the oval logo big with C lens 102 lower surface etc.；Can be at silicon light core
On sheet 107, making the silica-based registration pattern of heat sink 103, patterns can be and silica-based heat sink 103 etc.
Big square frame or mark 4 cross hairs at 4 angles respectively.
The present invention provides the second laser external light-source encapsulation scheme to see Fig. 4, including sealing box cover 101, C
Lens 102, silica-based heat sink 103, chip of laser 104, collimating lens 105, isolator assemblies 106,
Silicon optical chip 107；Chip of laser 104, collimating lens 105, isolator assemblies 106, C lens 102
Being arranged on silica-based heat sink 103, silica-based heat sink 103 are arranged on silicon optical chip 107.C lens 102 with
Silica-based heat sink 103 have 2 kinds of fixed forms, 1) C lens 102 are bonded in silica-based heat sink 103 by ultraviolet glue
On, C lens 102 convex surface upwards, is 70.52 degree with silica-based heat sink 103 bonding lower surface polishing angles；
2) directly utilize etching technics C lens 102 are etched in above silica-based heat sink 103.Chip of laser 104
The light launched, after collimating lens 105, isolator assemblies 106, sends out at sealing box cover 101 inwall
Raw reflection, light, after C lens 102 converge, converges to grating coupler 110 through silica-based heat sink 103
Place.Realize coupling of external light source and silicon optical chip 107.
The present invention provides a kind of twin-lens external light source encapsulating structure, and structure uses double lens coupling scheme,
First lens is used for beam path alignment, and second lens converges for light path, and second lens couples with grating
Device bonds together, and relative position is fixed, so, chip of laser and silica-based heat sink position are had relatively
Big range of tolerable variance, reduces chip of laser, and silica-based heat sink paster required precision, in conjunction with registration pattern
It is designed to realize passive optical coupling, and there is higher coupling efficiency.
In order to realize the optical signal input and output of silicon optical chip, the silicon optical chip that the present invention uses is at waveguide end
Being designed with vertical raster bonder utilizes optical diffraction that external light source is coupled in silicon waveguide, and the present invention provides one
The coupled structure design of the external light source planted, this coupled structure is compact, and PT positional tolerance is big, it is possible to by system
The patterning method that makes a check mark realizes passive coupling, it is provided that production efficiency, it is adaptable to batch production.
Although the present invention has been illustrated in detail in and has described relevant specific embodiment reference, but this area
Technical staff is it should be appreciated that can in form and details in without departing substantially from the spirit and scope of the present invention
On be variously modified.These change the protection domain required by claim falling within the present invention.
Claims (13)
1. the illuminating source packaging structure for silicon optical chip, it is characterised in that: include sealing box cover (101),
C lens (102), silica-based heat sink (103), chip of laser (104), isolator assemblies (106), silicon
Optical chip (107), described chip of laser (104), collimating lens (105), isolator assemblies (106)
Being set in turn on silica-based heat sink (103), described silica-based heat sink (103) and C lens (102) are arranged
Being formed in described sealing box cover (101) and silicon optical chip (107) seals in space, described silicon optical chip (107)
Including grating coupler (110), described C lens (102) are fixing and are coupled and aligned in silicon optical chip (107)
Grating coupler (110), sealing box cover (101) is provided with and is sent by described chip of laser (104)
Luminous reflectance to the tilt internal wall of C lens (102), C lens (102) lower surface is provided with and reflects light
The burnishing surface that line angle of incidence matches, C lens (102) deflection is away from the side court of silica-based heat sink (103)
To the inwall inclined-plane of sealing box cover (101), C lens (102) optical axis is consistent and main with light transmission direction
Light and optical axis coincidence.
A kind of illuminating source packaging structure for silicon optical chip the most according to claim 1, its feature exists
In: described sealing box cover (101) inwall angle, θ be 47 ° < θ < 60 °, C lens (102) lower surface
Polishing angleUse
A kind of illuminating source packaging structure for silicon optical chip the most according to claim 1, its feature exists
In: it is provided with collimating lens (105) between described chip of laser (104), isolator assemblies (106).
A kind of illuminating source packaging structure for silicon optical chip the most according to claim 2, its feature exists
In: the inwall bevel angle of described sealing box cover (101) is 54.74 degree, under described C lens (102)
Surface finish angle is 70.52 degree.
A kind of illuminating source packaging structure for silicon optical chip the most according to claim 3, its feature exists
In: the inwall inclined-plane of described sealing box cover (101) is provided with gold-plated or reflectance coating.
A kind of illuminating source packaging structure for silicon optical chip the most according to claim 4, its feature exists
In: described C lens (102) convex surface sets up, and this convex surface is coated with anti-reflection film, under C lens (102)
The geometric center of surface ellipse is aligned coincident with grating coupler (110).
A kind of illuminating source packaging structure for silicon optical chip the most according to claim 4, its feature exists
Be provided with a circle Gold plated Layer (109) in: described sealing box cover (101) bottom, silicon optical chip (107) with
This Gold plated Layer (109) position is correspondingly arranged on a circle Gold plated Layer (108), described silicon optical chip (107)
The upper deposition of Gold plated Layer (108) has one layer of golden tin solder, by welding by described sealing box cover (101) and silicon
Optical chip (107) seals fixing.
A kind of illuminating source packaging structure for silicon optical chip the most according to claim 6, its feature exists
In: described C lens (102) are directly arranged at silicon optical chip (107) or are arranged at silica-based heat sink (103)
On.
9. according to a kind of illuminating source packaging structure for silicon optical chip described in any one of claim 3-8,
It is characterized in that: on described silica-based heat sink (103), be provided with fixing collimating lens (105), isolator group
The square groove of part (106).
10. the illuminating source packaging structure for silicon optical chip, it is characterised in that: include C lens (102),
Silica-based heat sink (103), chip of laser (104), isolator assemblies (106), silicon optical chip (107),
Described chip of laser (104), collimating lens (105), isolator assemblies (106) are set in turn in silicon
On base is heat sink (103), described silicon optical chip (107) includes grating coupler (110), described C lens
(102) fix and be coupled and aligned in the grating coupler (110) of silicon optical chip (107), described laser instrument
The light path that chip (104) sends is provided with by the reflecting prism of luminous reflectance to C lens (102), described
Reflecting prism angle of reflection θ is 47 °, and < θ < 60 °, C lens (102) lower surface is provided with polishing angle Burnishing surface.
11. a kind of illuminating source packaging structures for silicon optical chip according to claim 10, its feature
Being: described reflecting prism uses trapezoidal reflecting prism (112), described trapezoidal reflecting prism (112) is anti-
Penetrate and on face, be provided with gold-plated or reflectance coating.
Tie for the light-source encapsulation for silicon optical chip as described in any one of claim 1-11 for 12. 1 kinds
The passive location method of structure, it is characterised in that: on silica-based heat sink (103) chip, make laser instrument core
The registration pattern of sheet (104), this registration pattern use the square frame big with chip of laser (104) etc. or
It is 4 cross hairs marking 4 angles respectively；On silicon optical chip (107), making C lens (102),
The registration pattern of silica-based heat sink (103), the registration pattern of described C lens (102) uses and C lens
(102) oval logo that lower surface etc. are big；Described silica-based heat sink (103) registration pattern uses and silica-based heat
Big square frames such as heavy (103) or mark 4 cross hairs at 4 angles respectively.
Tie for the light-source encapsulation for silicon optical chip as described in any one of claim 1-11 for 13. 1 kinds
The active coupling process of structure, it is characterised in that: comprise the steps: 1) C lens (102) are bonded to light
On grid bonder；2) trapezoidal reflecting prism is bonded in C lens (102) other, trapezoidal reflecting prism anti-
Brigadier's light path is turned to by face of penetrating with C lens (102) convex surface；3) clamping band chip of laser (104)
Silica-based heat sink (103), are powered to chip of laser (104) by external probe clamp；4) with source table prison
The output electric current of control silicon optical chip (107), determines the grating coupler (110) of silicon optical chip (107)
The light intensity received；5) silica-based heat sink (103) position is regulated until source meter reading maximum；6) some glue
Solidifying silica-based heat sink (103), active coupling regulation completes；7) trapezoidal reflecting prism is removed, seal box
Lid (101) is welded and fixed to silicon optical chip (107) corresponding position, and whole laser light source has encapsulated.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8772704B2 (en) * | 2008-07-09 | 2014-07-08 | Luxtera, Inc. | Method and system for a light source assembly supporting direct coupling to an integrated circuit |
| CN104122634A (en) * | 2014-07-18 | 2014-10-29 | 中国科学院半导体研究所 | Optical coupling apparatus for packaging optoelectronic devices |
| US20150316722A1 (en) * | 2014-05-02 | 2015-11-05 | Futurewei Technologies, Inc. | Compact external grating pbs/pbc coupler |
| CN105259623A (en) * | 2015-10-30 | 2016-01-20 | 武汉电信器件有限公司 | Laser and grating coupler packaging structure and method |
-
2016
- 2016-05-31 CN CN201610379414.9A patent/CN106019496B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8772704B2 (en) * | 2008-07-09 | 2014-07-08 | Luxtera, Inc. | Method and system for a light source assembly supporting direct coupling to an integrated circuit |
| US20150316722A1 (en) * | 2014-05-02 | 2015-11-05 | Futurewei Technologies, Inc. | Compact external grating pbs/pbc coupler |
| CN104122634A (en) * | 2014-07-18 | 2014-10-29 | 中国科学院半导体研究所 | Optical coupling apparatus for packaging optoelectronic devices |
| CN105259623A (en) * | 2015-10-30 | 2016-01-20 | 武汉电信器件有限公司 | Laser and grating coupler packaging structure and method |
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