CN106011784A - 一种利用微波等离子体化学气相沉积制备α相碳化钼晶体的方法 - Google Patents
一种利用微波等离子体化学气相沉积制备α相碳化钼晶体的方法 Download PDFInfo
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- CN106011784A CN106011784A CN201610389645.8A CN201610389645A CN106011784A CN 106011784 A CN106011784 A CN 106011784A CN 201610389645 A CN201610389645 A CN 201610389645A CN 106011784 A CN106011784 A CN 106011784A
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- Prior art keywords
- cavity
- molybdenum carbide
- microwave
- carbide crystal
- phase molybdenum
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201610389645.8A CN106011784B (zh) | 2016-06-03 | 2016-06-03 | 一种利用微波等离子体化学气相沉积制备α相碳化钼晶体的方法 |
Applications Claiming Priority (1)
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CN201610389645.8A CN106011784B (zh) | 2016-06-03 | 2016-06-03 | 一种利用微波等离子体化学气相沉积制备α相碳化钼晶体的方法 |
Publications (2)
Publication Number | Publication Date |
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CN106011784A true CN106011784A (zh) | 2016-10-12 |
CN106011784B CN106011784B (zh) | 2018-07-17 |
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CN201610389645.8A Expired - Fee Related CN106011784B (zh) | 2016-06-03 | 2016-06-03 | 一种利用微波等离子体化学气相沉积制备α相碳化钼晶体的方法 |
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CN (1) | CN106011784B (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107338476A (zh) * | 2017-07-31 | 2017-11-10 | 武汉工程大学 | 一种在mpcvd制备碳化钼晶体时利用在直流电弧引入钼源的方法 |
CN107352543A (zh) * | 2017-07-13 | 2017-11-17 | 东莞理工学院 | 一种碳化钼微纳米粉体的制备方法 |
CN107937980A (zh) * | 2017-12-01 | 2018-04-20 | 武汉工程大学 | 一种利用双基片台mpcvd反应装置将人体头发作为碳源生长出单晶金刚石的方法 |
CN111905784A (zh) * | 2020-08-06 | 2020-11-10 | 常熟理工学院 | 一种制备碳化钼催化材料的方法 |
CN111996048A (zh) * | 2020-08-27 | 2020-11-27 | 江苏元素六钻石科技有限公司 | 一种通过微波等离子法制备甲烷的装置及其工艺 |
CN112062606A (zh) * | 2020-07-23 | 2020-12-11 | 李新中 | 一种氢气分离提纯膜及其制备方法和应用 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1540718A (en) * | 1975-03-21 | 1979-02-14 | Fulmer Res Inst Ltd | Hard coating and its method of formation |
-
2016
- 2016-06-03 CN CN201610389645.8A patent/CN106011784B/zh not_active Expired - Fee Related
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1540718A (en) * | 1975-03-21 | 1979-02-14 | Fulmer Res Inst Ltd | Hard coating and its method of formation |
Non-Patent Citations (2)
Title |
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GIANFRANCO DI GIUSEPPE等: "Thin film deposition of Mo and Mo-compounds by PECVD from Mo(CO)6 and MoF6 as precursors: characterization of films and thermodynamic analysis", 《JOURNAL OF ELECTROANALYTICAL CHEMISTRY》 * |
靳广洲 等: "碳化钼的制备与标准", 《无机材料学报》 * |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107352543A (zh) * | 2017-07-13 | 2017-11-17 | 东莞理工学院 | 一种碳化钼微纳米粉体的制备方法 |
CN107338476A (zh) * | 2017-07-31 | 2017-11-10 | 武汉工程大学 | 一种在mpcvd制备碳化钼晶体时利用在直流电弧引入钼源的方法 |
CN107937980A (zh) * | 2017-12-01 | 2018-04-20 | 武汉工程大学 | 一种利用双基片台mpcvd反应装置将人体头发作为碳源生长出单晶金刚石的方法 |
CN112062606A (zh) * | 2020-07-23 | 2020-12-11 | 李新中 | 一种氢气分离提纯膜及其制备方法和应用 |
CN111905784A (zh) * | 2020-08-06 | 2020-11-10 | 常熟理工学院 | 一种制备碳化钼催化材料的方法 |
CN111905784B (zh) * | 2020-08-06 | 2022-11-25 | 常熟理工学院 | 一种制备碳化钼催化材料的方法 |
CN111996048A (zh) * | 2020-08-27 | 2020-11-27 | 江苏元素六钻石科技有限公司 | 一种通过微波等离子法制备甲烷的装置及其工艺 |
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Publication number | Publication date |
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CN106011784B (zh) | 2018-07-17 |
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Effective date of registration: 20201221 Address after: No.25-1, Gangcheng Road, dongyinggang Economic Development Zone, Hekou District, Dongying City, Shandong Province Patentee after: Shandong Xingqiang Chemical Industry Technology Research Institute Co., Ltd Address before: 510700 building G4, Dazhuang international, Science City, Huangpu District, Guangzhou City, Guangdong Province Patentee before: Tian Huihui |
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Granted publication date: 20180717 Termination date: 20210603 |
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