CN105934821A - 功率半导体装置 - Google Patents
功率半导体装置 Download PDFInfo
- Publication number
- CN105934821A CN105934821A CN201480073814.6A CN201480073814A CN105934821A CN 105934821 A CN105934821 A CN 105934821A CN 201480073814 A CN201480073814 A CN 201480073814A CN 105934821 A CN105934821 A CN 105934821A
- Authority
- CN
- China
- Prior art keywords
- power semiconductor
- electrode
- semiconductor arrangement
- housing
- determining
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 113
- 238000007872 degassing Methods 0.000 claims abstract description 37
- 229920000642 polymer Polymers 0.000 claims description 4
- 230000003313 weakening effect Effects 0.000 claims description 3
- 230000006378 damage Effects 0.000 abstract description 16
- 230000002829 reductive effect Effects 0.000 abstract description 7
- 238000004880 explosion Methods 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 35
- 239000000919 ceramic Substances 0.000 description 14
- 239000000463 material Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 230000015556 catabolic process Effects 0.000 description 5
- 206010063045 Effusion Diseases 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229920002379 silicone rubber Polymers 0.000 description 2
- 239000004945 silicone rubber Substances 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000013536 elastomeric material Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
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- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/562—Protection against mechanical damage
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/62—Protection against overvoltage, e.g. fuses, shunts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thyristors (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP14151989 | 2014-01-21 | ||
EP14151989.2 | 2014-01-21 | ||
PCT/EP2014/078301 WO2015110235A1 (en) | 2014-01-21 | 2014-12-17 | Power semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105934821A true CN105934821A (zh) | 2016-09-07 |
CN105934821B CN105934821B (zh) | 2018-11-23 |
Family
ID=49955270
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201480073814.6A Active CN105934821B (zh) | 2014-01-21 | 2014-12-17 | 功率半导体装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US10079214B2 (zh) |
EP (1) | EP3097585B1 (zh) |
JP (1) | JP6535676B2 (zh) |
KR (1) | KR101716101B1 (zh) |
CN (1) | CN105934821B (zh) |
WO (1) | WO2015110235A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107924882A (zh) * | 2015-05-19 | 2018-04-17 | Abb瑞士股份有限公司 | 半导体装置 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101926716B1 (ko) * | 2017-04-27 | 2018-12-07 | 엘에스산전 주식회사 | 파워반도체모듈 |
CN111106071B (zh) * | 2018-10-26 | 2021-09-07 | 株洲中车时代半导体有限公司 | 一种晶闸管及其制作方法 |
EP3879556A1 (en) * | 2020-03-11 | 2021-09-15 | ABB Schweiz AG | Power component including a main component and a sensor and emitter unit and system with the power component |
WO2023001354A1 (en) * | 2021-07-19 | 2023-01-26 | Dynex Semiconductor Limited | Semiconductor device having failure mode protection |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4099201A (en) * | 1977-04-11 | 1978-07-04 | General Electric Company | Semiconductor rectifier assembly having an insulating material therein that evolves gases when exposed to an arc |
JPS5558049U (zh) * | 1978-10-16 | 1980-04-19 | ||
JPS5558049A (en) * | 1978-10-23 | 1980-04-30 | Fumihiko Masuda | Apparatus for supplying confectionery dough and like |
US4274106A (en) * | 1977-11-07 | 1981-06-16 | Mitsubishi Denki Kabushiki Kaisha | Explosion proof vibration resistant flat package semiconductor device |
JPH0214572A (ja) * | 1988-07-01 | 1990-01-18 | Toshiba Corp | 半導体装置 |
US5489802A (en) * | 1992-06-26 | 1996-02-06 | Mitsubishi Denki Kabushiki Kaisha | Pressure contact type semiconductor device and heat compensator |
US5519231A (en) * | 1993-11-29 | 1996-05-21 | Mitsubishi Denki Kabushiki Kaisha | Pressure-connection type semiconductor device having a thermal compensator in contact with a semiconductor base substrate in an alloy-free state |
US5543363A (en) * | 1992-04-28 | 1996-08-06 | Mitsubishi Denki Kabushiki Kaisha | Process for adhesively attaching a semiconductor device to an electrode plate |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CH505463A (de) * | 1969-09-18 | 1971-03-31 | Bbc Brown Boveri & Cie | Halbleiteranordnung |
JPS5243246Y2 (zh) * | 1973-05-14 | 1977-10-01 | ||
JPS5354971A (en) * | 1976-10-28 | 1978-05-18 | Mitsubishi Electric Corp | Semiconductor device |
JPS5841771B2 (ja) * | 1977-11-30 | 1983-09-14 | 三菱電機株式会社 | 半導体装置 |
SE429802B (sv) * | 1979-02-21 | 1983-09-26 | Asea Ab | Halvledaranordning innefattande en tetande ringformad kropp av en sulfonpolymer eller av polyfenylensulfid |
JPS6182447A (ja) * | 1984-09-29 | 1986-04-26 | Toshiba Corp | 半導体装置 |
JP2918389B2 (ja) * | 1992-04-28 | 1999-07-12 | 三菱電機株式会社 | 半導体装置およびその組立方法 |
JP3471880B2 (ja) * | 1994-02-23 | 2003-12-02 | 三菱電機株式会社 | 圧接型半導体装置 |
JPH1013178A (ja) * | 1996-06-18 | 1998-01-16 | Kokusai Electric Co Ltd | 表面弾性波素子の製造方法 |
JP4174744B2 (ja) * | 1998-12-07 | 2008-11-05 | アール・ビー・コントロールズ株式会社 | コイルの耐湿処理方法 |
-
2014
- 2014-12-17 EP EP14815341.4A patent/EP3097585B1/en active Active
- 2014-12-17 JP JP2016547598A patent/JP6535676B2/ja active Active
- 2014-12-17 WO PCT/EP2014/078301 patent/WO2015110235A1/en active Application Filing
- 2014-12-17 CN CN201480073814.6A patent/CN105934821B/zh active Active
- 2014-12-17 KR KR1020167019680A patent/KR101716101B1/ko active IP Right Grant
-
2016
- 2016-07-21 US US15/216,182 patent/US10079214B2/en active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4099201A (en) * | 1977-04-11 | 1978-07-04 | General Electric Company | Semiconductor rectifier assembly having an insulating material therein that evolves gases when exposed to an arc |
US4274106A (en) * | 1977-11-07 | 1981-06-16 | Mitsubishi Denki Kabushiki Kaisha | Explosion proof vibration resistant flat package semiconductor device |
JPS5558049U (zh) * | 1978-10-16 | 1980-04-19 | ||
JPS5558049A (en) * | 1978-10-23 | 1980-04-30 | Fumihiko Masuda | Apparatus for supplying confectionery dough and like |
JPH0214572A (ja) * | 1988-07-01 | 1990-01-18 | Toshiba Corp | 半導体装置 |
US5543363A (en) * | 1992-04-28 | 1996-08-06 | Mitsubishi Denki Kabushiki Kaisha | Process for adhesively attaching a semiconductor device to an electrode plate |
US5489802A (en) * | 1992-06-26 | 1996-02-06 | Mitsubishi Denki Kabushiki Kaisha | Pressure contact type semiconductor device and heat compensator |
US5519231A (en) * | 1993-11-29 | 1996-05-21 | Mitsubishi Denki Kabushiki Kaisha | Pressure-connection type semiconductor device having a thermal compensator in contact with a semiconductor base substrate in an alloy-free state |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107924882A (zh) * | 2015-05-19 | 2018-04-17 | Abb瑞士股份有限公司 | 半导体装置 |
CN107924882B (zh) * | 2015-05-19 | 2020-07-28 | Abb电网瑞士股份公司 | 半导体装置 |
Also Published As
Publication number | Publication date |
---|---|
KR20160098504A (ko) | 2016-08-18 |
US20160329286A1 (en) | 2016-11-10 |
JP2017506819A (ja) | 2017-03-09 |
EP3097585B1 (en) | 2018-02-07 |
US10079214B2 (en) | 2018-09-18 |
JP6535676B2 (ja) | 2019-06-26 |
KR101716101B1 (ko) | 2017-03-27 |
WO2015110235A1 (en) | 2015-07-30 |
CN105934821B (zh) | 2018-11-23 |
EP3097585A1 (en) | 2016-11-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20180511 Address after: Baden, Switzerland Applicant after: ABB Switzerland Co.,Ltd. Address before: Zurich Applicant before: ABB TECHNOLOGY Ltd. |
|
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20210624 Address after: Baden, Switzerland Patentee after: ABB grid Switzerland AG Address before: Baden, Switzerland Patentee before: ABB Switzerland Co.,Ltd. |
|
CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: Swiss Baden Patentee after: Hitachi energy Switzerland AG Address before: Swiss Baden Patentee before: ABB grid Switzerland AG |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20240122 Address after: Zurich, SUI Patentee after: Hitachi Energy Co.,Ltd. Country or region after: Switzerland Address before: Swiss Baden Patentee before: Hitachi energy Switzerland AG Country or region before: Switzerland |