CN105896962A - Charge pump control circuit - Google Patents
Charge pump control circuit Download PDFInfo
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- CN105896962A CN105896962A CN201610407309.1A CN201610407309A CN105896962A CN 105896962 A CN105896962 A CN 105896962A CN 201610407309 A CN201610407309 A CN 201610407309A CN 105896962 A CN105896962 A CN 105896962A
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- charge pump
- circuit
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- 238000001514 detection method Methods 0.000 claims abstract description 54
- 230000006870 function Effects 0.000 claims description 23
- 230000005611 electricity Effects 0.000 claims description 9
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 claims description 7
- 238000010586 diagram Methods 0.000 description 9
- 230000010349 pulsation Effects 0.000 description 5
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- 238000005516 engineering process Methods 0.000 description 3
- 238000004088 simulation Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
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- 230000010354 integration Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0003—Details of control, feedback or regulation circuits
Abstract
An embodiment of the invention discloses a charge pump control circuit. The circuit comprises a charge pump unit, a voltage detection unit and a charge pump control unit, wherein the input end of the voltage detection unit is connected with the output end of the charge pump unit, and the voltage detection unit is used for detecting whether the voltage at the output end of the charge pump unit reaches the target voltage value or not; if so, the voltage detection unit outputs a first marking signal to the charge pump control unit; or otherwise, the voltage detection unit outputs a second marking signal to the charge pump control unit; the input end of the charge pump control unit is connected with the output end of the voltage detection unit, and the charge pump control unit is used for generating an enabling signal for enabling the set charge pump circuit to work under the control of the first marking signal so as to control the operation of the set charge pump circuit to maintain the target voltage value, or generating an enabling signal for enabling all the charge pump circuits to work under the control of the second marking signal so as to control the operation of all the charge pump circuits to jointly generate a target voltage in order to weaken the output voltage fluctuations.
Description
Technical field
The present embodiments relate to circuit engineering, particularly relate to a kind of control electrical appliances for electric charge pump.
Background technology
Nonvolatile flash memory medium (nor Flash/nand Flash) is the most common a kind of storage chip, have concurrently with
Machine memorizer (RandomAccess Memory, RAM) and read only memory (Read-Only Memory,
ROM) advantage, data power down will not lose, and is a kind of can to carry out, in system, the memorizer that electricity is erasable, with
Time its high integration and low cost make it the market mainstream.
Flash chip is made up of internal thousands of memory element, each storage element storage one digit number
According to, the storage completing data by applying corresponding voltage in the wordline of memory element operates, described electricity
Pressure is typically to be produced by charge pump circuit, and the voltage of charge pump circuit output would generally be with certain voltage wave
Dynamic, described voltage pulsation can affect the storage of data, and, along with the contracting of Flash chip technology feature size
Little, the capacitive load of output voltage is also with becoming big, in order to meet requirement readout time of Flash chip, needs
Want many charge pump circuit parallel operations, and then the voltage pulsation causing charge pump circuit to export more greatly and is difficult to
Control, be simultaneously entered power supply noise and also can increase, affect the storage performance of Flash chip.Of the prior art
A kind of charge pump circuit structural representation may refer to shown in Fig. 1, this circuit structure ripple to output voltage
Dynamic have certain inhibitory action, but effect is undesirable.
In sum, need the fluctuation range designing a kind of circuit to reduce charge pump circuit output voltage, carry
The accuracy of high output voltage.
Summary of the invention
The present invention provides a kind of control electrical appliances for electric charge pump, to reduce the fluctuation range of output voltage.
The embodiment of the present invention provides a kind of control electrical appliances for electric charge pump, and described circuit includes:
Charge pump unit, described charge pump unit includes at least two charge pump circuit, described charge pump circuit
It is connected in parallel with each other, is used for producing voltage；
Voltage detection unit, the outfan phase of the input of described voltage detection unit and described charge pump unit
Even, for detecting whether the output end voltage of described charge pump unit reaches target voltage values, the most defeated
Go out the first marking signal to electric charge pump control unit, otherwise export the second marking signal to electric charge pump control unit；
Electric charge pump control unit, the input of described electric charge pump control unit is defeated with described voltage detection unit
Go out end to be connected, produce under the control of described first marking signal and make the enable of setting charge pump circuit functions believe
Number, to control described setting charge pump circuit functions to maintain described target voltage values, or described second
The lower generation that controls of marking signal makes the enable signal of all charge pump circuit functions, to control all electric charge pumps
Circuit works jointly to produce target voltage.
Preferably, described voltage detection unit includes division module and marking signal generation module, wherein, institute
State division module for the output end voltage of described charge pump unit is carried out dividing potential drop；Described marking signal produces
Module is for producing the first marking signal or the second mark letter according to the output end voltage of described charge pump unit
Number.
Further, described division module includes the first resistance, the second resistance and the 3rd resistance, described mark
Signal generator module includes the first comparator and the second comparator, wherein:
First end of described first resistance is connected with the outfan of described charge pump unit, the second end and described the
First end of two resistance is connected, and the second end of described second resistance is connected with the first end of described 3rd resistance,
Second end ground connection of described 3rd resistance；
The normal phase input end of described first comparator is connected with the second end of described first resistance, inverting input
Being connected with reference voltage, outfan exports the first marking signal；
The normal phase input end of described second comparator is connected with the second end of described second resistance, inverting input
Being connected with reference voltage, outfan exports the second marking signal.
Preferably, described electric charge pump control unit includes that ripple reduction circuit, selection circuit, control signal are touched
Power Generation Road and electric charge pump enable signal generating circuit,
Wherein, the first input end of described ripple reduction circuit is connected with the outfan of described voltage detection unit,
Second input triggers circuit with described control signal and is connected, and is used for producing the described selection circuit Working mould of control
The control signal of formula；
The first input end of described selection circuit is connected with the outfan of described voltage detection unit, the second input
Holding and be connected with described control signal triggering circuit, Enable Pin is connected with the outfan of described ripple reduction circuit,
For first input end signal and the second input end signal are made a choice；
Described control signal triggers the data terminal of circuit and is connected with the outfan of described selection circuit, is used for producing
Control described ripple reduction circuit, selection circuit and electric charge pump and enable the control signal of signal generating circuit；
Described electric charge pump enables the first input end of signal generating circuit and the outfan of described voltage detection unit
Being connected, the second input triggers circuit with described control signal and is connected, and controls charge pump for producing
Enable signal.
Further, described ripple reduction circuit include the first phase inverter, the first NAND gate, the second NAND gate,
3rd NAND gate, the first nor gate and the second nor gate,
Wherein, the input of described first phase inverter and the 3rd input of the first NAND gate are connected, outfan
It is connected with the second input of the second NAND gate；The first input end of the first NAND gate and the second input and institute
Stating control signal triggering circuit to be connected, the first input end of outfan and the 3rd NAND gate is connected；Second with non-
First input end and the described control signal of door triggers circuit and is connected, and the second of outfan and the 3rd NAND gate is defeated
Enter end to be connected；The outfan of the 3rd NAND gate and the first input end of the first nor gate are connected；First nor gate
The second input and the second nor gate outfan be connected, the outfan of the first nor gate and the second nor gate
First input end be connected；Second input of the second nor gate and the outfan phase of described voltage detection unit
Even, outfan is connected with the Enable Pin of selection circuit.
Further, described selection circuit includes: the second phase inverter, first with door, second with door, the 3rd
Nor gate and the 3rd phase inverter, wherein, described second phase inverter input and described second nor gate
Outfan and first is connected with the second input of door, and outfan and second is connected with the second input of door；
First triggers circuit with the first input end of door and described control signal is connected, outfan and the 3rd nor gate
First input end is connected；Second is connected with the outfan of the first input end of door with described voltage detection unit,
Second input of outfan and the 3rd nor gate is connected；The outfan of the 3rd nor gate and the 3rd phase inverter
Input is connected；The data terminal that the outfan of the 3rd phase inverter triggers circuit with described control signal is connected.
Further, described control signal triggers circuit and includes at least two trigger, and described at least two is touched
Send out device to be sequentially connected with, the control end of described at least two trigger and reset terminal and described voltage detection unit
Outfan is connected, and the data terminal of the first trigger is connected with the outfan of described selection circuit.
Further, described electric charge pump enable signal generating circuit include: the 4th phase inverter, four nor gate,
5th nor gate and at least two the 4th NAND gate, wherein, the input of described 4th phase inverter and described electricity
The outfan of pressure detector unit is connected, and the second input of outfan and the 5th nor gate is connected；4th or non-
The first input end of door is connected with the outfan of described voltage detection unit, the second input and the 5th nor gate
Outfan be connected, the first input end of outfan and the 5th nor gate be connected；Described at least two the 4th with
The first input end of not gate and the outfan of the 5th nor gate are connected, and the second input touches with described at least two
The outfan one_to_one corresponding sending out device is connected, and outfan controls end with the enable of described at least two charge pump circuit
One_to_one corresponding is connected.
Further, described circuit also includes clock signal generating unit, described clock signal generating unit with
Charge pump unit is connected, for producing the clock signal of setpoint frequency.
The embodiment of the present invention provide control electrical appliances for electric charge pump, including charge pump unit, voltage detection unit and
Electric charge pump control unit, described charge pump unit includes at least two charge pump circuit, described charge pump circuit
It is connected in parallel with each other, for quickly producing voltage, by by the input of voltage detection unit and described electric charge
The outfan of pump unit is connected, and whether the output end voltage of charge pump unit is reached target voltage values and supervises
Survey, if it is export the first marking signal to electric charge pump control unit, otherwise export the second marking signal and arrive
Electric charge pump control unit, after described electric charge pump control unit receives described first marking signal, generation makes
Set the enable signal of charge pump circuit functions, to control described setting charge pump circuit functions to remain described
Target voltage values, produces after described electric charge pump control unit receives described second marking signal and makes all electricity
The enable signal of lotus pump circuit work, to control all charge pump circuit functions jointly to produce target rapidly
Voltage；After the voltage of charge pump unit generation reaches target voltage, by the control of electric charge pump control unit,
Only allow one or several charge pump circuit functions, thus reach to reduce the purpose of output voltage fluctuation.
Accompanying drawing explanation
Fig. 1 is a kind of charge pump circuit structural representation of the prior art；
Fig. 2 is a kind of control electrical appliances for electric charge pump structural representation that the embodiment of the present invention one provides；
The while that Fig. 3 being a charge pump circuit functions of the embodiment of the present invention one offer and multiple charge pump circuit
During work, the contrast schematic diagram of output voltage fluctuation；
Fig. 4 is the structural representation of the voltage detection unit that the embodiment of the present invention two provides；
Fig. 5 is the circuit diagram of a kind of voltage detection unit that the embodiment of the present invention two provides；
Fig. 6 is the structural representation of the electric charge pump control unit that the embodiment of the present invention three provides；
Fig. 7 is a kind of ripple reduction circuit and the circuit diagram of selection circuit of the embodiment of the present invention three offer；
Fig. 8 is the circuit diagram that a kind of control signal that the embodiment of the present invention three provides triggers circuit；
Fig. 9 is that a kind of electric charge pump that the embodiment of the present invention three provides enables signal generating circuit figure；
Figure 10 is each signal waveform schematic diagram that the embodiment of the present invention three provides；
Figure 11 is the control electrical appliances for electric charge pump of the present invention that the embodiment of the present invention three provides and existing electric charge pump
Control circuit output voltage fluctuation simulation waveform contrast schematic diagram under same loading condition.
Detailed description of the invention
The present invention is described in further detail with embodiment below in conjunction with the accompanying drawings.It is understood that this
Specific embodiment described by place is used only for explaining the present invention, rather than limitation of the invention.The most also need
It is noted that for the ease of describing, accompanying drawing illustrate only part related to the present invention and not all knot
Structure.
Embodiment one
A kind of control electrical appliances for electric charge pump structural representation that Fig. 2 provides for the embodiment of the present invention one, the present embodiment
It is applicable to requirement readout time in order to meet Flash chip, the situation of multiple charge pump circuit parallel operations.
As in figure 2 it is shown, a kind of control electrical appliances for electric charge pump structural representation that the present embodiment provides, including: electric charge pump
Unit 210, voltage detection unit 220 and electric charge pump control unit 230.
Charge pump unit 210 includes that at least two charge pump circuit, described charge pump circuit are connected in parallel with each other,
For producing voltage；The input of voltage detection unit 220 is connected with the outfan of charge pump unit 210,
For detecting whether the output end voltage of charge pump unit 210 reaches target voltage values, if it is output the
One marking signal, to electric charge pump control unit 230, otherwise exports the second marking signal to electric charge pump control unit
230；The input of electric charge pump control unit 230 is connected with the outfan of voltage detection unit 220, described
The lower generation that controls of the first marking signal makes the enable signal of setting charge pump circuit functions, sets described in controlling
Determine charge pump circuit functions to maintain described target voltage values, or under the control of described second marking signal
Produce the enable signal making all charge pump circuit functions, to control all charge pump circuit functions with common product
Raw target voltage.
In order to meet requirement readout time of Flash chip, need multiple charge pump circuit parallel operation, but
The voltage of each charge pump circuit output would generally with certain voltage pulsation, when multiple charge pump circuits also
In conjunction with time work time, the fluctuation range of output voltage can be bigger, specifically may refer to shown in Fig. 3 a electricity
The work of lotus pump circuit and multiple charge pump circuits are when working simultaneously, output voltage fluctuation comparison diagram, and wherein first
The voltage pulsation of output when curve 310 represents a charge pump circuit functions, the second curve 320 represents multiple
The voltage pulsation of output when charge pump circuit works simultaneously.Therefore, technical scheme is by electric charge
The outfan of pump unit arranges voltage detection unit 220, for the output voltage of charge pump unit 210 being
The no target voltage values that reaches is monitored, and electric charge pump control unit 230 exports according to voltage detection unit 220
Marking signal, control the quantity of charge pump circuit functions in charge pump unit 210, when charge pump unit 210
During the magnitude of voltage miss the mark magnitude of voltage exported, start all of charge pump circuit functions, in order to the most defeated
Go out target voltage values, after the magnitude of voltage of charge pump unit output reaches target voltage values, only start some
Or several charge pump circuit functions, while the readout time meeting Flash chip requires, maximum
Reduce to limit the fluctuation range of output voltage.
The technical scheme of the present embodiment, by by the input of voltage detection unit and described charge pump unit
Outfan is connected, and whether the output end voltage of charge pump unit is reached target voltage values and is monitored, if
It is to export the first marking signal to electric charge pump control unit, otherwise export the second marking signal to electric charge pump control
Unit processed, after described electric charge pump control unit receives described first marking signal, produces and makes setting electric charge
The enable signal of pump circuit work, to control described setting charge pump circuit functions to maintain described target voltage
Value, produces after described electric charge pump control unit receives described second marking signal and makes all charge pump circuits
The enable signal of work, to control all charge pump circuit functions jointly to produce target voltage rapidly；When
After the voltage that charge pump unit produces reaches target voltage, by the control of electric charge pump control unit, only allow
One or several charge pump circuit functions, thus reach meet Flash chip readout time require same
Time, reduce the purpose of output voltage fluctuation.
Embodiment two
Fig. 4 is the structural representation of the voltage detection unit that the embodiment of the present invention two provides, at above-described embodiment
On the basis of, voltage detection unit 220 is optimized by the present embodiment, shown in Figure 4, and voltage is examined
Survey unit 220 to include: division module 221 and marking signal generation module 222, wherein, division module 221
For the output end voltage of charge pump unit 210 is carried out dividing potential drop；Marking signal generation module 222 is for root
The first marking signal or the second marking signal is produced according to the output end voltage of charge pump unit 210.
Preferably, as a kind of implementation of voltage detection unit 220, shown in Figure 5, dividing potential drop mould
Block 221 includes: the first resistance R1, the second resistance R2 and the 3rd resistance R3, marking signal generation module
222 include the first comparator COMP1 and the second comparator COMP2, wherein:
First end of the first resistance R1 is connected with the outfan of charge pump unit 210, the second end and the second resistance
First end of R2 is connected, and second end of the second resistance R2 and first end of the 3rd resistance R3 are connected, and the 3rd
The second end ground connection of resistance R3；The normal phase input end of the first comparator COMP1 and the of the first resistance R1
Two ends are connected, and inverting input is connected with reference voltage, and outfan exports the first marking signal；Second compares
The normal phase input end of device COMP2 and second end of the second resistance R2 are connected, inverting input and reference voltage
Being connected, outfan exports the second marking signal.
Wherein, the resistance of the 3rd resistance R3 can need to select different values according to design, the first resistance R1
Choose according to the output target voltage of charge pump unit 210 with the resistance of the second resistance R2；First comparator
The detection target voltage values of the normal phase input end of the COMP1 normal phase input end more than the second comparator COMP2
Detection target voltage values, exemplary, the detection target of the normal phase input end of the first comparator COMP1
Magnitude of voltage can be configured as required, when the voltage of the normal phase input end of the first comparator COMP1 is big
When target voltage values, the outfan of the first comparator COMP1 is high level, otherwise, for low level；
Same reason, the detection target voltage values of the normal phase input end of the second comparator COMP2 can be according to tool
Body situation is configured, when the voltage of the normal phase input end of the second comparator COMP2 is more than target voltage values
Time, the outfan of the second comparator COMP2 is high level, otherwise, for low level.
The technical scheme of the present embodiment, is optimized for division module by voltage detection unit and marking signal produces mould
Block, wherein, division module is for carrying out dividing potential drop to the output end voltage of charge pump unit, and marking signal produces
Module is used for producing the first marking signal or the second marking signal according to the output end voltage of charge pump unit,
So that electric charge pump control unit can produce control according to described first marking signal or the second marking signal
The control signal of charge pump circuit functions processed.
Embodiment three
Fig. 6 is the structural representation of the electric charge pump control unit that the embodiment of the present invention three provides, in above-mentioned enforcement
On the basis of example, electric charge pump control unit 230 is optimized by the present embodiment, shown in Figure 6, electricity
Lotus pump control unit 230 includes that ripple reduction circuit 231, selection circuit 232, control signal trigger circuit
233 and electric charge pump enable signal generating circuit 234；
Wherein, the first input end of ripple reduction circuit 231 is connected with the outfan of voltage detection unit 220,
Second input triggers circuit 233 with control signal and is connected, and is used for producing control selection circuit 232 Working mould
The control signal of formula；The first input end of selection circuit 232 is connected with the outfan of voltage detection unit 220,
Second input triggers circuit 233 with control signal and is connected, Enable Pin and the output of ripple reduction circuit 231
End is connected, for making a choice first input end signal and the second input end signal；Control signal triggers electricity
The data terminal on road 233 is connected with the outfan of selection circuit 232, be used for producing control ripple reduction circuit 231,
Selection circuit 232 and electric charge pump enable the control signal of signal generating circuit 234；Electric charge pump enables signal and sends out
The first input end of raw circuit 234 is connected with the outfan of voltage detection unit 220, the second input and control
Signal processed triggers circuit 233 and is connected, for producing the enable signal controlling charge pump.
Exemplary, shown in Figure 7, ripple reduction circuit 231 include the first phase inverter T1, first with
Not gate Y1, the second NAND gate Y2, the 3rd NAND gate Y3, the first nor gate H1 and the second nor gate H2,
Wherein, the input of the first phase inverter T1 and the 3rd input of the first NAND gate Y1 are connected, outfan with
Second input of the second NAND gate Y2 is connected；The first input end of the first NAND gate Y1 and the second input
Triggering circuit 233 with control signal to be connected, the first input end of outfan and the 3rd NAND gate Y3 is connected；
The first input end of the second NAND gate Y2 and control signal trigger circuit 233 and are connected, outfan and the 3rd and
Second input of not gate Y3 is connected；The outfan of the 3rd NAND gate Y3 and the first of the first nor gate H1
Input is connected；Second input of the first nor gate H1 and the outfan of the second nor gate H2 are connected, the
The outfan of one nor gate H1 and the first input end of the second nor gate H2 are connected；Second nor gate H2's
Second input is connected with the outfan of voltage detection unit 220, outfan and the enable of selection circuit 232
End is connected.Shown in Figure 7, when output voltage VO UT of charge pump unit 210 reaches target voltage values
After, if TR_RIP is low level, and Q<0>become high level, if or TR_RIP be high level,
And Q<1>, Q<0>all become high level, then LP_EN becomes high level from low level.Signal TR_RIP
For input parameter, can lead to after output voltage VO UT of charge pump unit 210 reaches target voltage values
Cross signal TR_RIP and the number of the charge pump circuit simultaneously worked can be set.
Selection circuit 232 includes: the second phase inverter T2, first and door D1, second with door D2, the 3rd or
Not gate H3 and the 3rd phase inverter T3, wherein, the input of the second phase inverter T2 and the second nor gate H2's
Outfan and first is connected with second input of door D1, and outfan and second inputs with the second of door D2
End is connected；First triggers circuit 233 with the first input end of door D1 with control signal is connected, outfan and
The first input end of the 3rd nor gate H3 is connected；The first input end of second and door D2 and voltage detection unit
The outfan of 220 is connected, and second input of outfan and the 3rd nor gate H3 is connected；3rd nor gate
The outfan of H3 and the input of the 3rd phase inverter T3 are connected；The outfan of the 3rd phase inverter T3 and control letter
Number trigger circuit 233 data terminal be connected.Shown in Figure 7, when LP_EN is low level, outfan
D0 is equal to DISPMP2, and when LP_EN is high level, outfan D0 is equal to Q<n>, wherein n is big
In the integer equal to 0.Before output voltage VO UT of charge pump unit 210 reaches target voltage values,
Its outfan D0 selects DISPMP2, selects control signal to trigger circuit 233 after reaching target voltage values
Output Q<n>.
Exemplary, shown in Figure 8, control signal triggers circuit 233 and includes at least two trigger,
Described at least two trigger is sequentially connected with, the control end of described at least two trigger and reset terminal and voltage
The outfan (DISPMP with DISPMP2) of detector unit 220 is connected, the data of the first trigger C0
End is connected with the outfan of selection circuit 232.At the rising edge (can also be trailing edge) controlling end CLK
Latching input data D to output Q, RSTB is reset signal, when RSTB is low level, exports Q
For low level.Except data D of first trigger are from addition to the output of selection circuit 232, after its
The input D of remaining trigger is all from the output Q of above trigger.
Exemplarily, shown in Figure 9, electric charge pump enables signal generating circuit 234 and includes: the 4th is anti-phase
Device T4, four nor gate H4, the 5th nor gate H5 and at least two the 4th NAND gate Y4, wherein, the
The input of four phase inverter T4 is connected with the outfan of voltage detection unit 220, outfan and the 5th nor gate
Second input of H5 is connected；The first input end of four nor gate H4 is defeated with voltage detection unit 220
Going out end to be connected, the outfan of the second input and the 5th nor gate H5 is connected, outfan and the 5th nor gate
The first input end of H5 is connected；The first input end and the 5th or non-of described at least two the 4th NAND gate Y4
The outfan of door H5 is connected, the outfan one_to_one corresponding phase of the second input and described at least two trigger
Even, outfan is connected with the enable control end one_to_one corresponding of described at least two charge pump circuit.Electric charge pump makes
Energy signal generating circuit 234 is used for producing multiple electric charge pump and enables signal PMPEN<n:0>, i.e. PMPEN<0>,
PMPEN<1>……PMPEN<n>.Participate in the waveform diagram shown in Figure 10, in charge pump unit 210
Output voltage VO UT reach target voltage values before (i.e. before DISPMP uprises the i.e. t2 moment first),
All of PMPEN<n:0>it is height, whole charge pump circuits works simultaneously, in charge pump unit 210
Output voltage VO UT reach target voltage values after, PMPEN<n:0>would be equivalent to Q<n:0>, make
Each charge pump circuit circulates work one by one, or each two or more electric charge pump circulation work, thus
The fluctuation range of charge pump unit 210 output voltage can be reduced, improve the accuracy of output voltage, simultaneously
Requirement readout time of Flash chip can also be met, because the quantity of the charge pump circuit worked is few simultaneously,
So the input power noise of charge pump circuit can also be reduced.Specifically may refer to the present invention shown in Figure 11
Control electrical appliances for electric charge pump and existing control electrical appliances for electric charge pump under same loading condition output voltage fluctuation
Simulation waveform contrast schematic diagram, wherein the output voltage fluctuation of the charge pump unit 210 of the 1 expression present invention, 2
Represent the output voltage fluctuation of charge pump unit in prior art, it can be seen that technical scheme is permissible
Reduce the fluctuation range of the output voltage of charge pump unit 210 significantly.
On the basis of the various embodiments described above, it is single that described control electrical appliances for electric charge pump also includes that clock signal occurs
Unit, described clock signal generating unit is connected with charge pump unit, for producing the clock signal of setpoint frequency.
Note, above are only presently preferred embodiments of the present invention and institute's application technology principle.Those skilled in the art
It will be appreciated that the invention is not restricted to specific embodiment described here, can enter for a person skilled in the art
Row various obvious changes, readjust and substitute without departing from protection scope of the present invention.Therefore, though
So by above example, the present invention is described in further detail, but the present invention be not limited only to
Upper embodiment, without departing from the inventive concept, it is also possible to include other Equivalent embodiments more,
And the scope of the present invention is determined by scope of the appended claims.
Claims (9)
1. a control electrical appliances for electric charge pump, it is characterised in that including:
Charge pump unit, described charge pump unit includes at least two charge pump circuit, described charge pump circuit
It is connected in parallel with each other, is used for producing voltage；
Voltage detection unit, the outfan phase of the input of described voltage detection unit and described charge pump unit
Even, for detecting whether the output end voltage of described charge pump unit reaches target voltage values, the most defeated
Go out the first marking signal to electric charge pump control unit, otherwise export the second marking signal to electric charge pump control unit；
Electric charge pump control unit, the input of described electric charge pump control unit is defeated with described voltage detection unit
Go out end to be connected, produce under the control of described first marking signal and make the enable of setting charge pump circuit functions believe
Number, to control described setting charge pump circuit functions to maintain described target voltage values, or described second
The lower generation that controls of marking signal makes the enable signal of all charge pump circuit functions, to control all electric charge pumps
Circuit works jointly to produce target voltage.
Circuit the most according to claim 1, it is characterised in that described voltage detection unit includes dividing potential drop
Module and marking signal generation module, wherein, described division module is for the output to described charge pump unit
Terminal voltage carries out dividing potential drop；Described marking signal generation module is for the outfan electricity according to described charge pump unit
Pressure produces the first marking signal or the second marking signal.
Circuit the most according to claim 2, it is characterised in that described division module include the first resistance,
Second resistance and the 3rd resistance, described marking signal generation module includes the first comparator and the second comparator,
Wherein:
First end of described first resistance is connected with the outfan of described charge pump unit, the second end and described the
First end of two resistance is connected, and the second end of described second resistance is connected with the first end of described 3rd resistance,
Second end ground connection of described 3rd resistance；
The normal phase input end of described first comparator is connected with the second end of described first resistance, inverting input
Being connected with reference voltage, outfan exports the first marking signal；
The normal phase input end of described second comparator is connected with the second end of described second resistance, inverting input
Being connected with reference voltage, outfan exports the second marking signal.
4. according to the circuit described in claim 1 or 3, it is characterised in that described electric charge pump control unit bag
Include ripple reduction circuit, selection circuit, control signal triggers circuit and electric charge pump enables signal generating circuit,
Wherein, the first input end of described ripple reduction circuit is connected with the outfan of described voltage detection unit,
Second input triggers circuit with described control signal and is connected, and is used for producing the described selection circuit Working mould of control
The control signal of formula；
The first input end of described selection circuit is connected with the outfan of described voltage detection unit, the second input
Holding and be connected with described control signal triggering circuit, Enable Pin is connected with the outfan of described ripple reduction circuit,
For first input end signal and the second input end signal are made a choice；
Described control signal triggers the data terminal of circuit and is connected with the outfan of described selection circuit, is used for producing
Control described ripple reduction circuit, selection circuit and electric charge pump and enable the control signal of signal generating circuit；
Described electric charge pump enables the first input end of signal generating circuit and the outfan of described voltage detection unit
Being connected, the second input triggers circuit with described control signal and is connected, and controls charge pump for producing
Enable signal.
Circuit the most according to claim 4, it is characterised in that described ripple reduction circuit includes first
Phase inverter, the first NAND gate, the second NAND gate, the 3rd NAND gate, the first nor gate and the second nor gate,
Wherein, the input of described first phase inverter and the 3rd input of the first NAND gate are connected, outfan
It is connected with the second input of the second NAND gate；The first input end of the first NAND gate and the second input and institute
Stating control signal triggering circuit to be connected, the first input end of outfan and the 3rd NAND gate is connected；Second with non-
First input end and the described control signal of door triggers circuit and is connected, and the second of outfan and the 3rd NAND gate is defeated
Enter end to be connected；The outfan of the 3rd NAND gate and the first input end of the first nor gate are connected；First nor gate
The second input and the second nor gate outfan be connected, the outfan of the first nor gate and the second nor gate
First input end be connected；Second input of the second nor gate and the outfan phase of described voltage detection unit
Even, outfan is connected with the Enable Pin of selection circuit.
Circuit the most according to claim 5, it is characterised in that described selection circuit includes: second is anti-
Phase device, first with door, second with door, the 3rd nor gate and the 3rd phase inverter, wherein, described second anti-phase
The input of device is connected with the second input of door with the outfan and first of described second nor gate, output
End is connected with the second input of door with second；First triggers with described control signal with the first input end of door
Circuit is connected, and the first input end of outfan and the 3rd nor gate is connected；Second with the first input end of door with
The outfan of described voltage detection unit is connected, and the second input of outfan and the 3rd nor gate is connected；The
The outfan of three nor gates and the input of the 3rd phase inverter are connected；The outfan of the 3rd phase inverter and described control
Signal processed triggers the data terminal of circuit and is connected.
Circuit the most according to claim 6, it is characterised in that described control signal triggers circuit and includes
At least two trigger, described at least two trigger is sequentially connected with, the control of described at least two trigger
End is connected with the outfan of reset terminal with described voltage detection unit, the data terminal of the first trigger and described choosing
The outfan selecting circuit is connected.
Circuit the most according to claim 7, it is characterised in that described electric charge pump enables signal and electricity occurs
Road includes: the 4th phase inverter, four nor gate, the 5th nor gate and at least two the 4th NAND gate, wherein,
The described input of the 4th phase inverter is connected with the outfan of described voltage detection unit, outfan and the 5th or
Second input of not gate is connected；The first input end of four nor gate and the output of described voltage detection unit
End is connected, and the outfan of the second input and the 5th nor gate is connected, outfan and the first of the 5th nor gate
Input is connected；The first input end of described at least two the 4th NAND gate and the outfan phase of the 5th nor gate
Even, the second input is connected with the outfan one_to_one corresponding of described at least two trigger, and outfan is with described
The enable of at least two charge pump circuit controls end one_to_one corresponding and is connected.
Circuit the most according to claim 1, it is characterised in that also include clock signal generating unit,
Described clock signal generating unit is connected with charge pump unit, for producing the clock signal of setpoint frequency.
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| CN201610407309.1A CN105896962B (en) | 2016-06-12 | 2016-06-12 | A kind of control electrical appliances for electric charge pump |
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| CN106645893A (en) * | 2016-09-30 | 2017-05-10 | 上海贝岭股份有限公司 | Charge pump and voltage detection circuit thereof |
| CN107945831A (en) * | 2016-10-12 | 2018-04-20 | 北京京存技术有限公司 | Reduce the circuit and nand flash memory of nand flash memory programming settling time |
| CN108735248A (en) * | 2017-04-24 | 2018-11-02 | 北京兆易创新科技股份有限公司 | A kind of control method and control device of voltage PUMP |
| CN109254615A (en) * | 2017-07-13 | 2019-01-22 | 华邦电子股份有限公司 | Power supply unit and its power supply method for Data programming operation |
| CN109327133A (en) * | 2017-08-01 | 2019-02-12 | 北京兆易创新科技股份有限公司 | A kind of charge pump circuit |
| CN109756106A (en) * | 2018-12-27 | 2019-05-14 | 西安紫光国芯半导体有限公司 | A kind of method and circuit reducing charge pump system noise |
| CN109787471A (en) * | 2018-12-27 | 2019-05-21 | 西安紫光国芯半导体有限公司 | Quickly establish, can be achieved the charge pump system control method and charge pump system of low ripple |
| CN109842292A (en) * | 2017-11-24 | 2019-06-04 | 北京兆易创新科技股份有限公司 | A kind of charge pump circuit and NOR FLASH |
| CN109889034A (en) * | 2019-04-18 | 2019-06-14 | 北京集创北方科技股份有限公司 | Charge pump circuit, display device and signal processing method |
| CN111917288A (en) * | 2019-05-10 | 2020-11-10 | 北京兆易创新科技股份有限公司 | Charge pump system |
| CN112636589A (en) * | 2020-12-31 | 2021-04-09 | 深圳市芯天下技术有限公司 | Circuit for reducing output voltage ripple of charge pump |
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| CN106645893A (en) * | 2016-09-30 | 2017-05-10 | 上海贝岭股份有限公司 | Charge pump and voltage detection circuit thereof |
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| CN109842292A (en) * | 2017-11-24 | 2019-06-04 | 北京兆易创新科技股份有限公司 | A kind of charge pump circuit and NOR FLASH |
| CN109756106B (en) * | 2018-12-27 | 2021-07-23 | 西安紫光国芯半导体有限公司 | Method and circuit for reducing noise of charge pump system |
| CN109756106A (en) * | 2018-12-27 | 2019-05-14 | 西安紫光国芯半导体有限公司 | A kind of method and circuit reducing charge pump system noise |
| CN109787471A (en) * | 2018-12-27 | 2019-05-21 | 西安紫光国芯半导体有限公司 | Quickly establish, can be achieved the charge pump system control method and charge pump system of low ripple |
| CN109787471B (en) * | 2018-12-27 | 2021-08-20 | 西安紫光国芯半导体有限公司 | Charge pump system control method capable of being quickly established and achieving low ripple and charge pump system |
| CN109889034A (en) * | 2019-04-18 | 2019-06-14 | 北京集创北方科技股份有限公司 | Charge pump circuit, display device and signal processing method |
| CN111917288A (en) * | 2019-05-10 | 2020-11-10 | 北京兆易创新科技股份有限公司 | Charge pump system |
| CN111917288B (en) * | 2019-05-10 | 2022-03-01 | 北京兆易创新科技股份有限公司 | Charge pump system |
| CN112636589A (en) * | 2020-12-31 | 2021-04-09 | 深圳市芯天下技术有限公司 | Circuit for reducing output voltage ripple of charge pump |
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