CN108735248B - Control method and control device for voltage PUMP - Google Patents
Control method and control device for voltage PUMP Download PDFInfo
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- CN108735248B CN108735248B CN201710272645.4A CN201710272645A CN108735248B CN 108735248 B CN108735248 B CN 108735248B CN 201710272645 A CN201710272645 A CN 201710272645A CN 108735248 B CN108735248 B CN 108735248B
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Abstract
The embodiment of the invention provides a control method and a control device of a voltage PUMP, which are applied to NAND FLASH, NAND FLASH comprising a voltage management module and N parallel voltage PUMPs, wherein N is an integer greater than 1, and the control method comprises the following steps: detecting a feedback signal output by the voltage management module; when the feedback signal is at a high level, controlling the preset number of voltage PUMPs to be in a working state, and timing the time when the feedback signal is at the high level; the preset number is less than N; and adjusting the number of the voltages PUMP in the working state according to the timing time. The embodiment of the invention keeps enough driving capability in the process of driving the load, dynamically controls the number of the voltage PUMP in the working state and exchanges the voltage PUMP in the working state, thereby reducing power consumption and burrs and improving the reliability of each device in NAND FLASH.
Description
Technical Field
The present invention relates to the field of storage technologies, and in particular, to a method and an apparatus for controlling a voltage PUMP.
Background
Voltage PUMP is an important block in NAND FLASH (flash memory), and provides a sufficiently high voltage for NAND FLASH read/write operations. The working principle of the voltage PUMP is to increase the input voltage to the target voltage value in a one-stage and one-stage addition manner. Since the current conversion efficiency of the voltage PUMP is low, several voltages PUMP are usually connected in parallel to drive the load in order to obtain sufficient driving capability.
The load driving mode in the prior art has the following defects:
first, in the voltage maintaining stage of driving the load, all the voltages PUMP are always in the working state, resulting in a very large power consumption.
Second, although the plurality of PUMPs are operated at the same time and charged quickly, a relatively large glitch is caused.
Third, each voltage PUMP outputs a high voltage, and the reliability of a device subjected to the high voltage for a long time may be reduced.
Disclosure of Invention
In view of the foregoing problems, an object of the embodiments of the present invention is to provide a method and a device for controlling a voltage PUMP, so as to solve the problems of large power consumption and glitch and low device reliability in the prior art.
In order to solve the above problem, an embodiment of the present invention discloses a method for controlling a voltage PUMP, which is applied to NAND FLASH, where NAND FLASH includes a voltage management module and N parallel voltage PUMPs, where N is an integer greater than 1, and the method for controlling the voltage PUMP includes:
detecting a feedback signal output by the voltage management module;
when the feedback signal is at a high level, controlling a preset number of voltage PUMPs to be in a working state, and timing the time when the feedback signal is at the high level; the preset number is less than N;
and adjusting the number of the voltage PUMPs in the working state according to the timing time.
Optionally, the adjusting the number of the voltages PUMPs in the working state according to the timing time includes the following steps:
and when the timing time is greater than the preset timing time and the feedback signal is kept at a high level, increasing the number of the voltage PUMPs in the working state every preset time after the preset timing time.
Optionally, the controlling the preset number of voltages PUMP to be in the working state includes the following steps:
acquiring voltage PUMP information in a previous working state;
determining a preset number of voltage PUMPs which need to be in the working state at this time according to the voltage PUMP information in the working state at the previous time;
and replacing the voltage PUMP information in the previous working state with the preset number of voltage PUMP information in the working state, and controlling the preset number of voltage PUMPs in the working state to be in the working state.
Optionally, the preset number of voltage PUMPs required to be in the working state at this time does not include the voltage PUMP in the working state at the previous time; or
The preset number of voltage PUMP portions which need to be in the working state at this time comprise the voltage PUMP which is in the working state at the previous time.
Optionally, after the feedback signal is at a high level, the method further includes:
and when the feedback signal is at a low level, controlling the voltage PUMP in the working state to stop working.
In order to solve the above problem, an embodiment of the present invention further discloses a control device of a voltage PUMP, which is applied to NAND FLASH, where the NAND FLASH includes a voltage management module and N parallel-connected voltage PUMPs, where N is an integer greater than 1, and the control device of the voltage PUMP includes:
the signal detection module is used for detecting the feedback signal output by the voltage management module;
the first control module is used for controlling a preset number of voltage PUMPs to be in a working state when the feedback signal is at a high level and timing the time when the feedback signal is at the high level; the preset number is less than N;
and the adjusting module is used for adjusting the number of the voltage PUMPs in the working state according to the timing time.
Optionally, the adjusting module includes:
and the adjusting unit is used for increasing the number of the voltage PUMPs in the working state every preset time after the preset timing time when the timing time is greater than the preset timing time and the feedback signal is kept at a high level.
Optionally, the controlling, by the first control module, the preset number of voltages PUMP to be in a working state includes:
the information acquisition unit is used for acquiring the voltage PUMP information in the working state at the previous time;
the determining unit is used for determining a preset number of voltage PUMPs which need to be in the working state at this time according to the voltage PUMP information in the working state at the previous time;
and the control unit is used for replacing the voltage PUMP information in the previous working state with the preset number of voltage PUMP information in the working state, and controlling the preset number of voltage PUMP information in the working state to be in the working state.
Optionally, the preset number of voltage PUMPs required to be in the working state at this time does not include the voltage PUMP in the working state at the previous time; or the preset number of voltage PUMP parts needing to be in the working state at this time comprise the voltage PUMP in the working state at the last time.
Optionally, after the feedback signal is at a high level, the method further includes:
and the second control module is used for controlling the voltage PUMP in the working state to stop working when the feedback signal is at a low level.
The embodiment of the invention has the following advantages: when NAND FLASH is operated, the feedback signal output by the voltage management module is detected, and then when the feedback signal is at a high level, that is, when the output voltage of the voltage PUMP does not reach a target voltage, the preset number of voltage PUMPs is controlled to be in a working state first, and meanwhile, the time when the feedback signal is at the high level is counted, wherein the preset number is less than N. Therefore, the sufficient driving capability is kept and the number of the voltage PUMP in the working state is dynamically controlled in the process of driving the load, so that the power consumption and the glitch are reduced, and the reliability of each device in NAND FLASH is improved.
Drawings
FIG. 1 is a flowchart illustrating steps of a method for controlling a voltage PUMP according to an embodiment of the present invention;
FIG. 2 is a flowchart illustrating steps of a method for controlling the voltage PUMP according to an embodiment of the present invention;
FIG. 3 is a timing diagram illustrating an embodiment of a method for controlling the voltage PUMP according to the present invention;
FIG. 4 is a block diagram of an embodiment of a control apparatus for controlling the voltage PUMP according to the present invention;
fig. 5 is a block diagram of a control apparatus for controlling a voltage PUMP according to an embodiment of the present invention.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in further detail below.
The control method and the control device for the voltage PUMP according to the embodiments of the present invention may be applied to NAND FLASH, NAND FLASH, where the control method and the control device for the voltage PUMP may include a voltage management module and N parallel voltage PUMPs, where N is an integer greater than 1.
Example one
Referring to fig. 1, a flowchart illustrating steps of an embodiment of a method for controlling a voltage PUMP according to the present invention is shown, which may specifically include the following steps:
and step 10, detecting a feedback signal output by the voltage management module.
Specifically, the output ends of the N voltages PUMP are connected to the voltage management module in parallel, and the voltage management module is configured to determine whether the output voltage of the voltage PUMP reaches the target voltage. If the output voltage of the voltage PUMP reaches the target voltage, the feedback signal output by the voltage management module is at a low level; if the output voltage of the voltage PUMP does not reach the target voltage, the feedback signal output by the voltage management module is at a high level.
In step 20, the feedback signal is at a high level, that is, the output voltage of the voltage PUMP does not reach the target voltage, at this time, a preset number of the voltages PUMP are controlled to be in the working state, instead of all the voltages PUMP being in the working state, so that the power consumption is reduced and the reliability of each device in NAND FLASH is increased.
And step 30, adjusting the number of the voltages PUMP in the working state according to the timing time.
Specifically, when the timing time is longer, it indicates that the preset number of voltage PUMPs in the working state still cannot meet the requirement of the load for the driving capability, and at this time, step 30 may correspondingly increase the number of voltage PUMPs in the working state according to the timing time.
For example, when the voltage PUMP is in the voltage establishing stage for driving the load, the preset number of the voltages PUMP in the working state cannot meet the requirement of the load for the driving capability, the time for which the feedback signal is at the high level is longer, and step 30 may correspondingly increase the number of the voltages PUMP in the working state according to the magnitude of the timing time, so as to increase the driving capability of the voltages PUMP and rapidly step to the target voltage.
For example, when the voltage PUMP is in the voltage maintaining stage for driving the load, the preset number of the voltages PUMP in the working state can satisfy the requirement of the load for the driving capability, and the time for the feedback signal to be at the high level is short, step 30 does not need to adjust the number of the voltages PUMP in the working state.
In this way, since the number of the voltages PUMP in the operating state can be dynamically adjusted according to the timing time, part of the voltages PUMP are not always in the operating state in the process of driving the load. Therefore, not only the glitch can be effectively reduced, but also the power consumption can be reduced and the reliability of each device in NAND FLASH can be increased.
The embodiment of the invention has the following advantages: when NAND FLASH is operated, the feedback signal output by the voltage management module is detected, and then when the feedback signal is at a high level, that is, when the output voltage of the voltage PUMP does not reach a target voltage, the preset number of voltage PUMPs is controlled to be in a working state first, and meanwhile, the time when the feedback signal is at the high level is counted, wherein the preset number is less than N. Therefore, the sufficient driving capability is kept and the number of the voltage PUMP in the working state is dynamically controlled in the process of driving the load, so that the power consumption and the glitch are reduced, and the reliability of each device in NAND FLASH is improved.
Example two
Referring to fig. 2, a flowchart illustrating steps of a specific embodiment of a method for controlling a voltage PUMP according to the present invention is shown, which may specifically include the following steps:
Optionally, the step 210 of controlling the preset number of voltages PUMP to be in the working state may include the following steps:
in step 211, the voltage PUMP information in the previous working state is obtained.
The voltage PUMP information may include number information or flag information of the voltage PUMP.
Optionally, the preset number of voltages PUMP that need to be in the working state at this time may not include the voltage PUMP that was in the working state at the previous time; or the preset number of voltages PUMP required to be in the working state at this time may partially include the voltage PUMP in the working state at the previous time.
When N is greater than or equal to twice the preset number, the preset number of voltages PUMP that need to be in the working state at this time may not include the voltage PUMP that was in the working state at the previous time; when N is less than twice the preset number, the preset number of voltages PUMP required to be in the working state at this time may partially include the voltage PUMP in the working state at the previous time.
For example, in an embodiment of the present invention, N is equal to 3, and the preset number is 2, assuming that the 3 voltages PUMP are respectively the voltage PUMP0, the voltage PUMP1, and the voltage PUMP 2. If the voltage PUMPs in the previous working state are the voltage PUMP0 and the voltage PUMP1, because N is less than twice the preset number, the preset number of voltages PUMPs required to be in the working state at this time may partially include the voltage PUMPs required to be in the working state at the previous time, that is, the preset number of voltages PUMPs required to be in the working state at this time may be the voltage PUMP0 and the voltage PUMP2, or the preset number of voltages PUMPs required to be in the working state at this time may be the voltage PUMP1 and the voltage PUMP 2.
In step 213, the preset number of voltage PUMP information required to be in the working state at this time is replaced with the previous voltage PUMP information in the working state, so that when the feedback signal is at a high level next time, the voltage PUMP information in the working state at this time can be obtained in step 211.
In steps 211 to 213, the voltage PUMP in the working state can be dynamically exchanged, so that the voltage PUMP is prevented from being always in the working state, and the reliability and the service life of the voltage PUMP are improved.
In step 310, the number of the voltages PUMP in the working state is adjusted according to the timing time.
Specifically, when the timing time is longer, it indicates that the preset number of voltage PUMPs in the working state still cannot meet the requirement of the load for the driving capability, and at this time, step 30 may correspondingly increase the number of voltage PUMPs in the working state according to the timing time.
For example, referring to fig. 3, when the voltage PUMP is in the voltage establishing stage (stages t1-t2 and t3-t4 in fig. 3) for driving the load, the preset number of voltages PUMP in the working state cannot meet the requirement of the load for the driving capability, the time for the feedback signal to be at the high level is longer, and step 30 may correspondingly increase the number of voltages PUMP in the working state according to the magnitude of the timing time, so as to increase the driving capability of the voltages PUMP and rapidly step to the target voltage.
For example, when the voltage PUMP is in the voltage maintaining period (the period t2-t3 and the period t4-t5 in fig. 3) for driving the load, the driving capability requirement of the load can be satisfied by a preset number of the voltage PUMPs in the working state, and the time for the feedback signal to be at the high level is short, so that the step 30 does not need to adjust the number of the voltage PUMPs in the working state. In fig. 3, V _ OUT is an output voltage of voltage PUMP, disppb is a feedback signal, PMP _ EN <2> is an enable signal of voltage PUMP2, PMP _ EN <1> is an enable signal of voltage PUMP1, and PMP _ EN <0> is an enable signal of voltage PUMP 0.
Optionally, in an embodiment of the present invention, the step 310 of adjusting the number of the voltages PUMP in the active state according to the timing time may include the following steps:
in step 311, when the timing time is greater than the preset timing time and the feedback signal is kept at the high level, the number of the voltages PUMP in the operating state is increased every preset time after the preset timing time.
The number of the voltages PUMP in the operating state may be increased by one or more. Further, in an embodiment of the present invention, after the preset timing time, at different time intervals, the number of the different voltages PUMP in the working state may also be increased.
For example, if the preset timing time is 1ms and the preset time is 0.1ms, when the timing time is greater than 1ms and the feedback signal is kept at the high level, 1 voltage PUMP in the operating state may be added at 1.1ms, and 2 voltages PUMP in the operating state may be added at 1.2 ms.
In this way, since the number of the voltages PUMP in the operating state can be dynamically adjusted according to the timing time, part of the voltages PUMP are not always in the operating state in the process of driving the load. Therefore, not only the glitch can be effectively reduced, but also the power consumption can be reduced and the reliability of each device in NAND FLASH can be increased.
Optionally, in an embodiment of the present invention, referring to fig. 3, after the feedback signal is at a high level, the method may further include:
and when the feedback signal is at a low level, controlling the voltage PUMP in the working state to stop working.
Wherein, the feedback signal is at a low level, i.e. the output voltage of the voltage PUMP is raised to the target voltage.
The embodiment of the invention has the following advantages: when NAND FLASH is operated, the feedback signal output by the voltage management module is detected, and then when the feedback signal is at a high level, that is, when the output voltage of the voltage PUMP does not reach the target voltage, a preset number of the voltage PUMPs are controlled to be in an operating state first, where the preset number of the voltage PUMPs may not include the voltage PUMP in the operating state last time, or partially include the voltage PUMP in the operating state last time, and the time when the feedback signal is at the high level is counted, where the preset number is less than N, and when the counted time is longer than the preset counting time and the feedback signal is kept at the high level, it is indicated that the preset number of the voltage PUMPs in the operating state cannot meet the requirement of the load for the driving capability, and at this time, the number of the voltage PUMPs in the operating state may be increased every preset time. In addition, the preset number of voltage PUMPs which need to be in the working state at this time can be determined according to the information of the voltage PUMP which is in the working state at the previous time, so that the sufficient driving capability is kept in the process of driving the load, the number of the voltage PUMPs in the working state is dynamically controlled and the voltage PUMPs in the working state are exchanged, power consumption and burrs are reduced, and the reliability of each device in NAND FLASH is improved.
It should be noted that, for simplicity of description, the method embodiments are described as a series of acts or combination of acts, but those skilled in the art will recognize that the present invention is not limited by the illustrated order of acts, as some steps may occur in other orders or concurrently in accordance with the embodiments of the present invention. Further, those skilled in the art will appreciate that the embodiments described in the specification are presently preferred and that no particular act is required to implement the invention.
EXAMPLE III
Referring to fig. 4, a block diagram of a control apparatus of a voltage PUMP according to an embodiment of the present invention is shown, and the control apparatus may specifically include the following modules:
and the signal detection module 10 is used for detecting the feedback signal output by the voltage management module.
The first control module 20 is configured to control a preset number of voltages PUMP to be in a working state when the feedback signal is at a high level, and time the feedback signal at the high level; the preset number is less than N.
And an adjusting module 30, configured to adjust the number of the voltages PUMP in the working state according to the timing time.
The third embodiment of the invention has the following advantages: when NAND FLASH is operated, the feedback signal output by the voltage management module is detected, and then when the feedback signal is at a high level, that is, when the output voltage of the voltage PUMP does not reach a target voltage, the preset number of voltage PUMPs is controlled to be in a working state first, and meanwhile, the time when the feedback signal is at the high level is counted, wherein the preset number is less than N. Therefore, the sufficient driving capability is kept and the number of the voltage PUMP in the working state is dynamically controlled in the process of driving the load, so that the power consumption and the glitch are reduced, and the reliability of each device in NAND FLASH is improved.
Example four
Referring to fig. 5, a block diagram of a specific embodiment of a control apparatus for a voltage PUMP according to the present invention is shown, and the control apparatus may specifically include the following modules:
and a signal detection module 110, configured to detect a feedback signal output by the voltage management module.
The first control module 210 is configured to control a preset number of voltages PUMP to be in a working state when the feedback signal is at a high level, and time the feedback signal at the high level; the preset number is less than N.
Optionally, the controlling, by the first control module, the preset number of voltages PUMP to be in the working state may include:
the information obtaining unit 211 is configured to obtain voltage PUMP information that is in an operating state last time.
The determining unit 212 is configured to determine a preset number of voltage PUMPs that need to be in the working state at this time according to the voltage PUMP information in the working state at the previous time.
The control unit 213 is configured to replace the voltage PUMP information in the previous working state with the preset number of voltage PUMP information that needs to be in the working state at this time, and control the preset number of voltage PUMPs that need to be in the working state at this time to be in the working state.
Optionally, the preset number of voltages PUMP that need to be in the working state at this time does not include the voltage PUMP that was in the working state at the previous time; or the preset number of voltage PUMP portions required to be in the working state at this time include the voltage PUMP in the working state at the previous time.
The adjusting module 310 is configured to adjust the number of the voltages PUMP in the working state according to the timing time.
Optionally, in an embodiment of the present invention, the adjusting module may include:
the adjusting unit 311 is configured to increase the number of the voltages PUMP in the operating state every preset time after the preset time when the timing time is greater than the preset time and the feedback signal is kept at a high level.
Optionally, in an embodiment of the present invention, after the feedback signal is at a high level, the method may further include:
and the second control module is used for controlling the voltage PUMP in the working state to stop working when the feedback signal is at a low level.
The fourth embodiment of the invention has the following advantages: when NAND FLASH is operated, the feedback signal output by the voltage management module is detected, and then when the feedback signal is at a high level, that is, when the output voltage of the voltage PUMP does not reach the target voltage, a preset number of the voltage PUMPs are controlled to be in an operating state first, where the preset number of the voltage PUMPs may not include the voltage PUMP in the operating state last time, or partially include the voltage PUMP in the operating state last time, and the time when the feedback signal is at the high level is counted, where the preset number is less than N, and when the counted time is longer than the preset counting time and the feedback signal is kept at the high level, it is indicated that the preset number of the voltage PUMPs in the operating state cannot meet the requirement of the load for the driving capability, and at this time, the number of the voltage PUMPs in the operating state may be increased every preset time. In addition, the preset number of voltage PUMPs which need to be in the working state at this time can be determined according to the information of the voltage PUMP which is in the working state at the previous time, so that the sufficient driving capability is kept in the process of driving the load, the number of the voltage PUMPs in the working state is dynamically controlled and the voltage PUMPs in the working state are exchanged, power consumption and burrs are reduced, and the reliability of each device in NAND FLASH is improved.
For the device embodiment, since it is basically similar to the method embodiment, the description is simple, and for the relevant points, refer to the partial description of the method embodiment.
The embodiments in the present specification are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other.
As will be appreciated by one skilled in the art, embodiments of the present invention may be provided as a method, apparatus, or computer program product. Accordingly, embodiments of the present invention may take the form of an entirely hardware embodiment, an entirely software embodiment or an embodiment combining software and hardware aspects. Furthermore, embodiments of the present invention may take the form of a computer program product embodied on one or more computer-usable storage media (including, but not limited to, disk storage, CD-ROM, optical storage, and the like) having computer-usable program code embodied therein.
Embodiments of the present invention are described with reference to flowchart illustrations and/or block diagrams of methods, terminal devices (systems), and computer program products according to embodiments of the invention. It will be understood that each flow and/or block of the flow diagrams and/or block diagrams, and combinations of flows and/or blocks in the flow diagrams and/or block diagrams, can be implemented by computer program instructions. These computer program instructions may be provided to a processor of a general purpose computer, special purpose computer, embedded processor, or other programmable data processing terminal to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing terminal, create means for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be stored in a computer-readable memory that can direct a computer or other programmable data processing terminal to function in a particular manner, such that the instructions stored in the computer-readable memory produce an article of manufacture including instruction means which implement the function specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be loaded onto a computer or other programmable data processing terminal to cause a series of operational steps to be performed on the computer or other programmable terminal to produce a computer implemented process such that the instructions which execute on the computer or other programmable terminal provide steps for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
While preferred embodiments of the present invention have been described, additional variations and modifications of these embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. Therefore, it is intended that the appended claims be interpreted as including preferred embodiments and all such alterations and modifications as fall within the scope of the embodiments of the invention.
Finally, it should also be noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or terminal that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or terminal. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in a process, method, article, or terminal that comprises the element.
The method for controlling the voltage PUMP and the device for controlling the voltage PUMP provided by the invention are described in detail, and a specific example is applied in the text to explain the principle and the implementation of the invention, and the description of the above embodiment is only used to help understand the method and the core idea of the invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention.
Claims (8)
1. A control method of a voltage PUMP is applied to NAND FLASH, and is characterized in that NAND FLASH comprises a voltage management module and N parallel voltage PUMPs, N is an integer greater than 1, and the control method of the voltage PUMP comprises the following steps:
detecting a feedback signal output by the voltage management module;
when the feedback signal is at a high level, controlling a preset number of voltage PUMPs to be in a working state, and timing the time when the feedback signal is at the high level; the preset number is less than N; the feedback signal is high level, which indicates that the output voltage of the voltage PUMP does not reach the target voltage;
adjusting the number of the voltage PUMPs in the working state according to the timing time;
wherein the step of adjusting the number of the voltages PUMPs in the operating state according to the time includes:
and when the timing time is greater than the preset timing time and the feedback signal is kept at a high level, increasing the number of the voltage PUMPs in the working state every preset time after the preset timing time.
2. The method according to claim 1, wherein the controlling the preset number of voltages PUMP to be in an operating state comprises the steps of:
acquiring voltage PUMP information in a previous working state;
determining a preset number of voltage PUMPs which need to be in the working state at this time according to the voltage PUMP information in the working state at the previous time;
and replacing the voltage PUMP information in the previous working state with the preset number of voltage PUMP information in the working state, and controlling the preset number of voltage PUMPs in the working state to be in the working state.
3. The method of claim 2,
the preset number of voltage PUMPs which need to be in the working state at this time does not include the voltage PUMP which is in the working state at the previous time; or
The preset number of voltage PUMP portions which need to be in the working state at this time comprise the voltage PUMP which is in the working state at the previous time.
4. The method of claim 1, further comprising, after the feedback signal is high:
and when the feedback signal is at a low level, controlling the voltage PUMP in the working state to stop working.
5. A control device of a voltage PUMP, which is applied to NAND FLASH, wherein the NAND FLASH comprises a voltage management module and N parallel voltages PUMP, N is an integer greater than 1, and the control device of the voltage PUMP comprises:
the signal detection module is used for detecting the feedback signal output by the voltage management module;
the first control module is used for controlling a preset number of voltage PUMPs to be in a working state when the feedback signal is at a high level and timing the time when the feedback signal is at the high level; the preset number is less than N; the feedback signal is high level, which indicates that the output voltage of the voltage PUMP does not reach the target voltage;
the adjusting module is used for adjusting the number of the voltage PUMPs in the working state according to the timing time;
the adjusting module comprises an adjusting unit, and when the timing time is greater than a preset timing time and the feedback signal is kept at a high level, the number of the voltage PUMPs in the working state is increased every preset time after the preset timing time.
6. The apparatus of claim 5, wherein the first control module controls a preset number of voltages PUMP to be in an operating state, and comprises:
the information acquisition unit is used for acquiring the voltage PUMP information in the working state at the previous time;
the determining unit is used for determining a preset number of voltage PUMPs which need to be in the working state at this time according to the voltage PUMP information in the working state at the previous time;
and the control unit is used for replacing the voltage PUMP information in the previous working state with the preset number of voltage PUMP information in the working state, and controlling the preset number of voltage PUMP information in the working state to be in the working state.
7. The apparatus of claim 6,
the preset number of voltage PUMPs which need to be in the working state at this time does not include the voltage PUMP which is in the working state at the previous time; or
The preset number of voltage PUMP portions which need to be in the working state at this time comprise the voltage PUMP which is in the working state at the previous time.
8. The apparatus of claim 5, further comprising, after the feedback signal is high:
and the second control module is used for controlling the voltage PUMP in the working state to stop working when the feedback signal is at a low level.
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Address after: Room 101, Floor 1-5, Building 8, Yard 9, Fenghao East Road, Haidian District, Beijing 100094 Patentee after: Zhaoyi Innovation Technology Group Co.,Ltd. Patentee after: HEFEI GEYI INTEGRATED CIRCUIT Co.,Ltd. Address before: 100083 12 Floors, Block A, Tiangong Building, Science and Technology University, 30 College Road, Haidian District, Beijing Patentee before: GIGADEVICE SEMICONDUCTOR(BEIJING) Inc. Patentee before: HEFEI GEYI INTEGRATED CIRCUIT Co.,Ltd. |