CN105874615B - 具有反射性侧壁的发光器件 - Google Patents

具有反射性侧壁的发光器件 Download PDF

Info

Publication number
CN105874615B
CN105874615B CN201580004109.5A CN201580004109A CN105874615B CN 105874615 B CN105874615 B CN 105874615B CN 201580004109 A CN201580004109 A CN 201580004109A CN 105874615 B CN105874615 B CN 105874615B
Authority
CN
China
Prior art keywords
light emitting
wavelength converting
reflective layer
converting element
emitting device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201580004109.5A
Other languages
English (en)
Chinese (zh)
Other versions
CN105874615A (zh
Inventor
A.D.施里克
K.K.麦
B.J.莫兰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lumileds Holding BV
Original Assignee
Koninklijke Philips NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips NV filed Critical Koninklijke Philips NV
Priority to CN201911266998.9A priority Critical patent/CN110890449B/zh
Publication of CN105874615A publication Critical patent/CN105874615A/zh
Application granted granted Critical
Publication of CN105874615B publication Critical patent/CN105874615B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/034—Manufacture or treatment of coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0362—Manufacture or treatment of packages of encapsulations

Landscapes

  • Led Device Packages (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
CN201580004109.5A 2014-01-09 2015-01-02 具有反射性侧壁的发光器件 Active CN105874615B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201911266998.9A CN110890449B (zh) 2014-01-09 2015-01-02 具有反射性侧壁的发光器件

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201461925328P 2014-01-09 2014-01-09
US61/925328 2014-01-09
PCT/IB2015/050025 WO2015104648A1 (en) 2014-01-09 2015-01-02 Light emitting device with reflective sidewall

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201911266998.9A Division CN110890449B (zh) 2014-01-09 2015-01-02 具有反射性侧壁的发光器件

Publications (2)

Publication Number Publication Date
CN105874615A CN105874615A (zh) 2016-08-17
CN105874615B true CN105874615B (zh) 2020-01-03

Family

ID=52396774

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201580004109.5A Active CN105874615B (zh) 2014-01-09 2015-01-02 具有反射性侧壁的发光器件
CN201911266998.9A Active CN110890449B (zh) 2014-01-09 2015-01-02 具有反射性侧壁的发光器件

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201911266998.9A Active CN110890449B (zh) 2014-01-09 2015-01-02 具有反射性侧壁的发光器件

Country Status (6)

Country Link
US (2) US10211374B2 (enExample)
EP (1) EP3092664B1 (enExample)
JP (1) JP6749240B2 (enExample)
KR (1) KR102318355B1 (enExample)
CN (2) CN105874615B (enExample)
WO (1) WO2015104648A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102017124155A1 (de) * 2017-10-17 2019-04-18 Osram Opto Semiconductors Gmbh Licht emittierendes Bauelement und Verfahren zur Herstellung eines Licht emittierenden Bauelements
CN111261752B (zh) * 2018-11-30 2021-08-06 光宝光电(常州)有限公司 发光封装结构及其制造方法
JP6849139B1 (ja) * 2019-08-02 2021-03-24 日亜化学工業株式会社 発光装置および面発光光源
JP7570863B2 (ja) * 2020-09-24 2024-10-22 スタンレー電気株式会社 半導体発光装置及び半導体発光モジュール
JP7621783B2 (ja) 2020-12-10 2025-01-27 スタンレー電気株式会社 半導体発光装置及び半導体発光素子の支持基板
EP4295405A1 (en) * 2021-02-16 2023-12-27 Lumileds LLC Method for manufacturing light emitting elements, light emitting element, lighting device and automotive headlamp
TWI892458B (zh) * 2023-06-13 2025-08-01 光寶科技股份有限公司 發光裝置及其製造方法
WO2025069513A1 (ja) * 2023-09-26 2025-04-03 日亜化学工業株式会社 発光装置及びその製造方法
CN119855342A (zh) * 2025-03-21 2025-04-18 江西省兆驰光电有限公司 倒装led灯珠及其封装方法、显示屏

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090045416A1 (en) * 2007-08-16 2009-02-19 Philips Lumileds Lighting Company Llc Optical Element Coupled to Low Profile Side Emitting LED
CN101978516A (zh) * 2008-03-21 2011-02-16 皇家飞利浦电子股份有限公司 发光器件
US20120086029A1 (en) * 2010-10-06 2012-04-12 Kuo-Hui Yu Light-emitting diode device and manufacturing method thereof

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005158795A (ja) 2003-11-20 2005-06-16 Sumitomo Electric Ind Ltd 発光ダイオード及び半導体発光装置
US20050116635A1 (en) * 2003-12-02 2005-06-02 Walson James E. Multiple LED source and method for assembling same
KR100924474B1 (ko) * 2005-03-24 2009-11-03 쿄세라 코포레이션 발광장치
JP2007019096A (ja) 2005-07-05 2007-01-25 Toyoda Gosei Co Ltd 発光装置及びその製造方法
JP2010514187A (ja) * 2006-12-21 2010-04-30 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 有形の波長変換器を有する発光装置
DE102007019776A1 (de) * 2007-04-26 2008-10-30 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung einer Mehrzahl optoelektronischer Bauelemente
KR101517644B1 (ko) 2007-11-29 2015-05-04 니치아 카가쿠 고교 가부시키가이샤 발광장치 및 그 제조방법
EP2223352B8 (en) 2007-12-11 2018-08-29 Lumileds Holding B.V. Side emitting device with hybrid top reflector
KR101266205B1 (ko) * 2008-07-08 2013-05-21 우시오덴키 가부시키가이샤 발광 장치 및 발광 장치의 제조 방법
RU2503092C2 (ru) * 2008-09-25 2013-12-27 Конинклейке Филипс Электроникс Н.В. Светоизлучающее устройство с покрытием и способ нанесения покрытия на него
JP5278023B2 (ja) 2009-02-18 2013-09-04 日亜化学工業株式会社 発光装置の製造方法
WO2010143114A1 (en) * 2009-06-11 2010-12-16 Koninklijke Philips Electronics N.V. Led illumination device
US8097894B2 (en) * 2009-07-23 2012-01-17 Koninklijke Philips Electronics N.V. LED with molded reflective sidewall coating
JP5396215B2 (ja) * 2009-09-24 2014-01-22 スタンレー電気株式会社 半導体発光装置の製造方法、半導体発光装置および液晶表示装置
JP5810301B2 (ja) * 2009-11-25 2015-11-11 パナソニックＩｐマネジメント株式会社 照明装置
DE102009058006B4 (de) * 2009-12-11 2022-03-31 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Halbleiterbauteil
KR102109668B1 (ko) * 2010-04-08 2020-05-12 니치아 카가쿠 고교 가부시키가이샤 발광 장치 및 그 제조 방법
DE102010027253B4 (de) 2010-07-15 2022-05-12 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Halbleiterbauteil
DE102010032041A1 (de) * 2010-07-23 2012-01-26 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Bauelement und Verfahren zur Herstellung von strahlungsemittierenden Bauelemnenten
KR101209449B1 (ko) 2011-04-29 2012-12-07 피에스아이 주식회사 풀－칼라 ｌｅｄ 디스플레이 장치 및 그 제조방법
DE102011080458A1 (de) 2011-08-04 2013-02-07 Osram Opto Semiconductors Gmbh Optoelektronische anordnung und verfahren zur herstellung einer optoelektronischen anordnung
JP5848562B2 (ja) 2011-09-21 2016-01-27 シチズン電子株式会社 半導体発光装置及びその製造方法。
JP5956167B2 (ja) * 2012-01-23 2016-07-27 スタンレー電気株式会社 発光装置、車両用灯具及び発光装置の製造方法
US8907362B2 (en) * 2012-01-24 2014-12-09 Cooledge Lighting Inc. Light-emitting dies incorporating wavelength-conversion materials and related methods
CN103608939A (zh) * 2012-04-11 2014-02-26 东芝技术中心有限公司 具有受屏蔽硅衬底的发光装置
JP6094062B2 (ja) * 2012-06-01 2017-03-15 日亜化学工業株式会社 発光装置及びその製造方法
JP2014093403A (ja) * 2012-11-02 2014-05-19 Shin Etsu Chem Co Ltd 熱硬化性シリコーン樹脂シート及びその製造方法、該熱硬化性シリコーン樹脂シートを使用する発光装置及びその製造方法
DE102013214877A1 (de) * 2013-07-30 2015-02-19 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines Abdeckelements und eines optoelektronischen Bauelements, Abdeckelement und optoelektronisches Bauelement

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090045416A1 (en) * 2007-08-16 2009-02-19 Philips Lumileds Lighting Company Llc Optical Element Coupled to Low Profile Side Emitting LED
CN101978516A (zh) * 2008-03-21 2011-02-16 皇家飞利浦电子股份有限公司 发光器件
US20120086029A1 (en) * 2010-10-06 2012-04-12 Kuo-Hui Yu Light-emitting diode device and manufacturing method thereof

Also Published As

Publication number Publication date
WO2015104648A1 (en) 2015-07-16
CN110890449A (zh) 2020-03-17
JP6749240B2 (ja) 2020-09-02
US20190189857A1 (en) 2019-06-20
JP2017504206A (ja) 2017-02-02
EP3092664B1 (en) 2019-08-14
US20160365487A1 (en) 2016-12-15
KR20160106697A (ko) 2016-09-12
US11404608B2 (en) 2022-08-02
EP3092664A1 (en) 2016-11-16
US10211374B2 (en) 2019-02-19
CN105874615A (zh) 2016-08-17
CN110890449B (zh) 2023-11-07
KR102318355B1 (ko) 2021-10-28

Similar Documents

Publication Publication Date Title
CN105874615B (zh) 具有反射性侧壁的发光器件
JP6933691B2 (ja) トップエミッション型半導体発光デバイス
JP7068771B2 (ja) 波長変換式半導体発光デバイス
CN105393373B (zh) 具有光学元件和反射体的发光器件
JP6419077B2 (ja) 波長変換発光デバイス
CN106575693B (zh) 具有小源尺寸的波长转换发光设备
CN107078195B (zh) 具有反射层的底座上的发光设备
JP2017502524A (ja) 波長変換式半導体発光デバイス
WO2013108143A1 (en) Semiconductor light emitting device lamp that emits light at large angles

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
TA01 Transfer of patent application right
TA01 Transfer of patent application right

Effective date of registration: 20180408

Address after: Holland Schiphol

Applicant after: LUMILEDS HOLDING B.V.

Address before: Holland Ian Deho Finn

Applicant before: Koninkl Philips Electronics NV

GR01 Patent grant
GR01 Patent grant