CN105870097A - 一种高像素红外焦平面探测器及其制备方法 - Google Patents
一种高像素红外焦平面探测器及其制备方法 Download PDFInfo
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- CN105870097A CN105870097A CN201610204043.0A CN201610204043A CN105870097A CN 105870097 A CN105870097 A CN 105870097A CN 201610204043 A CN201610204043 A CN 201610204043A CN 105870097 A CN105870097 A CN 105870097A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
- H01L23/49894—Materials of the insulating layers or coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/562—Protection against mechanical damage
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8334—Bonding interfaces of the layer connector
- H01L2224/83355—Bonding interfaces of the layer connector having an external coating, e.g. protective bond-through coating
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- Microelectronics & Electronic Packaging (AREA)
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Abstract
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CN201610204043.0A CN105870097B (zh) | 2016-04-01 | 2016-04-01 | 一种高像素红外焦平面探测器及其制备方法 |
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108122794A (zh) * | 2017-12-18 | 2018-06-05 | 中电科技集团重庆声光电有限公司 | 焦平面阵列探测器倒装焊对接方法 |
CN108682622A (zh) * | 2018-04-02 | 2018-10-19 | 武汉高芯科技有限公司 | HgCdTe器件钝化层的电学接触孔刻蚀方法 |
CN108807428A (zh) * | 2018-04-26 | 2018-11-13 | 武汉高芯科技有限公司 | 带隔离栏的焦平面阵列及其制备方法 |
CN108987523A (zh) * | 2017-06-05 | 2018-12-11 | 北京弘芯科技有限公司 | 红外焦平面探测器及其制备方法 |
CN110487203A (zh) * | 2019-07-10 | 2019-11-22 | 中国科学院上海技术物理研究所 | 一种校正红外焦平面探测器电路面形的结构 |
CN111128992A (zh) * | 2019-12-13 | 2020-05-08 | 中国电子科技集团公司第四十四研究所 | 一种抗辐照近红外焦平面探测器及制作方法 |
CN115491638A (zh) * | 2022-08-31 | 2022-12-20 | 中国电子科技集团公司第十一研究所 | 一种用于探测器芯片的宽光谱背增透薄膜的制备方法 |
Citations (3)
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CN1264162A (zh) * | 1999-02-13 | 2000-08-23 | 国际商业机器公司 | 用于铝化学抛光的虚拟图形 |
CN101728403A (zh) * | 2009-11-18 | 2010-06-09 | 中国科学院上海技术物理研究所 | 背照式碲镉汞长波光导型红外面阵探测器 |
CN103943557A (zh) * | 2014-04-28 | 2014-07-23 | 华进半导体封装先导技术研发中心有限公司 | 利用cmp对重布线层中聚合物介质层表面进行平坦化的方法 |
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2016
- 2016-04-01 CN CN201610204043.0A patent/CN105870097B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1264162A (zh) * | 1999-02-13 | 2000-08-23 | 国际商业机器公司 | 用于铝化学抛光的虚拟图形 |
CN101728403A (zh) * | 2009-11-18 | 2010-06-09 | 中国科学院上海技术物理研究所 | 背照式碲镉汞长波光导型红外面阵探测器 |
CN103943557A (zh) * | 2014-04-28 | 2014-07-23 | 华进半导体封装先导技术研发中心有限公司 | 利用cmp对重布线层中聚合物介质层表面进行平坦化的方法 |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108987523A (zh) * | 2017-06-05 | 2018-12-11 | 北京弘芯科技有限公司 | 红外焦平面探测器及其制备方法 |
CN108122794A (zh) * | 2017-12-18 | 2018-06-05 | 中电科技集团重庆声光电有限公司 | 焦平面阵列探测器倒装焊对接方法 |
CN108122794B (zh) * | 2017-12-18 | 2019-11-05 | 中电科技集团重庆声光电有限公司 | 焦平面阵列探测器倒装焊对接方法 |
CN108682622A (zh) * | 2018-04-02 | 2018-10-19 | 武汉高芯科技有限公司 | HgCdTe器件钝化层的电学接触孔刻蚀方法 |
CN108807428A (zh) * | 2018-04-26 | 2018-11-13 | 武汉高芯科技有限公司 | 带隔离栏的焦平面阵列及其制备方法 |
CN110487203A (zh) * | 2019-07-10 | 2019-11-22 | 中国科学院上海技术物理研究所 | 一种校正红外焦平面探测器电路面形的结构 |
CN111128992A (zh) * | 2019-12-13 | 2020-05-08 | 中国电子科技集团公司第四十四研究所 | 一种抗辐照近红外焦平面探测器及制作方法 |
CN111128992B (zh) * | 2019-12-13 | 2021-08-10 | 中国电子科技集团公司第四十四研究所 | 一种抗辐照近红外焦平面探测器及制作方法 |
CN115491638A (zh) * | 2022-08-31 | 2022-12-20 | 中国电子科技集团公司第十一研究所 | 一种用于探测器芯片的宽光谱背增透薄膜的制备方法 |
CN115491638B (zh) * | 2022-08-31 | 2024-03-19 | 中国电子科技集团公司第十一研究所 | 一种用于探测器芯片的宽光谱背增透薄膜的制备方法 |
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