CN105845795A - Diode and manufacturing method therefor - Google Patents
Diode and manufacturing method therefor Download PDFInfo
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- CN105845795A CN105845795A CN201510016596.9A CN201510016596A CN105845795A CN 105845795 A CN105845795 A CN 105845795A CN 201510016596 A CN201510016596 A CN 201510016596A CN 105845795 A CN105845795 A CN 105845795A
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Abstract
The embodiment of the invention relates to the technical field of the conductor chip manufacturing technology, and especially relates to a diode and a manufacturing method therefor, so as to solve a problem in the prior art that a constant-current diode with a wider cross current region cannot be obtained easily because of the constraint of manufacturing technological parameters. According to the embodiment of the invention, the method comprises the steps: forming a trench on the surface of an epitaxial layer; injecting ions into the trench in a mode of high high-energy particle injection for M times, and forming first conductive-type well regions, wherein M is an integer greater than one; and forming the diode through the subsequent processing. The first conductive-type well regions are formed in the mode of high high-energy particle injection, thereby enabling the depth of each first conductive-type well region to be larger. Moreover, the interval between the first conductive-type well regions is smaller. Furthermore, the ions are injected into the groove for M times, thereby enabling the particle concentration in the first conductive-type well regions to be more uniform, and obtaining the constant-current diode with the wider cross current region and better performances.
Description
Technical field
The present embodiments relate to semiconductor chip fabrication Technology field, particularly relate to a kind of diode and
Its manufacture method.
Background technology
The current regulator diode being widely used in LED component at present is quasiconductor constant current device, this constant current
Diode can export constant electric current in wider voltage range, and has the highest motional impedance.By
Constant current performance in them is good, price is relatively low, easy to use, be widely used in LED component the most at present
In.The matching of current regulator diode and LED component is preferable, and current regulator diode is it can be avoided that LED device
Part, by the damaging of variation of overcurrent, overvoltage and cycle, serves protection and makees LED component
With.
The crossing current region of current regulator diode is relevant with the length of the raceway groove of current regulator diode, and the length of raceway groove refers to
The degree of depth of the p-well formed in current regulator diode.In general, the length of raceway groove is the longest, current regulator diode
Constant current district is the widest, and device performance is the best.Prior art generally use the modes such as injection, diffusion make p-well,
But being limited by technological parameter, hardly result in deep p-well, the mode injected according to groove makes and obtains
P-well often uniformity poor, it is difficult to ensure that current regulator diode has stable starting voltage and constant current.
To sum up, prior art also exists because of the restriction of processing technology parameter, it is not easy to obtain wider crossing current district
The technical problem of current regulator diode.
Summary of the invention
The embodiment of the present invention provides a kind of diode and preparation method thereof, in order to solve present in prior art
Restriction because of processing technology parameter, it is not easy to obtain the technical problem of the current regulator diode in wider crossing current district.
The embodiment of the present invention provides a kind of diode manufacturing method, comprises the following steps:
Epitaxial layer is formed oxide layer and mask layer；
Oxide layer and mask layer are carried out photoetching and etching, forms groove in epi-layer surface；
Divided M time by high energy particle injection mode in groove, inject ion, form the first conductive type of trap
District；Wherein, M is the integer more than 1；
Epitaxial layer carries out photoetching, injection successively, forms the second conduction type source region；
Dielectric layer, front metal layer is made successively at epitaxial layer；Metal layer on back is made at the silicon substrate back side.
In the embodiment of the present invention, owing to forming the first conduction type well region by high energy particle by the way of being injected,
So that the degree of depth of the first conduction type well region is deeper, and can be by the spacing control between the first conduction type well region
That makes is less, further as by a point M injection ion in described groove, forms the first conductive-type
Type well region, thus the particle concentration in the first conduction type well region can be made more uniform, thus obtain wider horizontal stroke
Stream district, the current regulator diode of better performances.
In groove, inject ion it is preferred that divided M time by high energy particle injection mode, form first and lead
Electricity type well region, specifically includes:
Divided M time by high energy particle injection mode in groove, inject ion, form the first conductive type of trap
District, for being injected into the M time injection for the first time, the energy injecting ion is sequentially reduced.
It is preferred that substrate is N-type substrate, then epitaxial layer is N-type epitaxy layer, then the first conduction type is P
Type, the second conduction type is N-type；Or substrate is N-type substrate, then epitaxial layer is p-type epitaxial layer,
Then the first conduction type is N-type, and the second conduction type is p-type.
It is preferred that high energy particle is boron.
It is preferred that form oxide layer and mask layer on epitaxial layer, specifically include:
At Grown epitaxial layer, epitaxial layer generates oxide layer, oxide layer sputters layer of metal
Titanium is to form mask layer.
In groove, inject ion it is preferred that divided M time by high energy particle injection mode, form first and lead
Electricity type well region, specifically includes:
Divided M time by high energy particle injection mode in groove, inject ion, utilize high-temperature heat treatment process
Drive in point ion injected for M time, form the first conduction type well region.
The embodiment of the present invention provides a kind of diode, and diode said method makes.
In the embodiment of the present invention, owing to forming the first conduction type well region by high energy particle by the way of being injected,
So that the degree of depth of the first conduction type well region is deeper, and can be by the spacing control between the first conduction type well region
That makes is less, further as by a point M injection ion in described groove, forms the first conductive-type
Type well region, thus the particle concentration in the first conduction type well region can be made more uniform, thus obtain wider horizontal stroke
Stream district, the current regulator diode of better performances.
Accompanying drawing explanation
For the technical scheme being illustrated more clearly that in the embodiment of the present invention, institute in embodiment being described below
The accompanying drawing used is needed to briefly introduce, it should be apparent that, the accompanying drawing in describing below is only the present invention's
Some embodiments, from the point of view of those of ordinary skill in the art, in the premise not paying creative work
Under, it is also possible to other accompanying drawing is obtained according to these accompanying drawings.
The manufacture method flow chart of a kind of diode that Fig. 1 provides for the embodiment of the present invention；
Structural representation in the manufacturing process of a kind of diode that Fig. 2-Figure 10 provides for the embodiment of the present invention.
Detailed description of the invention
In order to make the purpose of the present invention, technical scheme and beneficial effect the clearest, below in conjunction with accompanying drawing
And embodiment, the present invention is further elaborated.Should be appreciated that described herein being embodied as
Example only in order to explain the present invention, is not intended to limit the present invention.
As it is shown in figure 1, the manufacture method of a kind of diode provided for the embodiment of the present invention, the method includes
Following steps:
Step 101, forms oxide layer and mask layer on epitaxial layer；
Step 102, carries out photoetching and etching to oxide layer and mask layer, forms groove in epi-layer surface；
Step 103, is divided M time by high energy particle injection mode and injects ion in groove, form first and lead
Electricity type well region；Wherein, M is the integer more than 1；
Step 104, carries out photoetching, injection on epitaxial layer successively, forms the second conduction type source region；
Step 105, makes dielectric layer, front metal layer successively at epitaxial layer；
Step 106, makes metal layer on back at the silicon substrate back side.
Owing to forming the first conduction type well region by high energy particle by the way of being injected, so that the first conductive-type
The degree of depth of type well region is deeper, and can by between the first conduction type well region spacing control less, further
Owing to by a point M injection ion in described groove, forming the first conduction type well region, thus can make
Particle concentration in first conduction type well region is more uniform, thus obtains wider crossing current district, better performances
Current regulator diode.
In the present embodiment, substrate is N-type substrate, then the first epitaxial layer is the N being grown in N-type substrate
Type silicon chip, substrate is P type substrate, then the first epitaxial layer is the P-type silicon sheet being grown in P type substrate, tool
Body determines according to the design of device.If epitaxial layer is N-type epitaxy layer, then the first conduction type is p-type,
Second conduction type is N-type；If epitaxial layer is p-type epitaxial layer, then the first conduction type is N-type, the
Two conduction types are p-type.
Example below is with epitaxial layer as N-type epitaxy layer, and the first conduction type is p-type, the second conduction type
For being introduced as a example by N-type.
In above-mentioned steps 101, at Grown epitaxial layer, epitaxial layer generates oxide layer, in oxidation
Layer of metal titanium is sputtered to form the structure of mask layer as shown in Figure 2 on layer.In this step, oxide layer can be
Conventional silicon oxide.Mask layer can be Titanium, aluminium sesquioxide etc., can enter according to concrete diode structure
Row selects.
Above-mentioned steps 102, lays the structure of photoresist as it is shown on figure 3, to oxide layer and covering on mask layer
Film layer carries out photoetching and etching, forms the structure of groove as shown in Figure 4 in epi-layer surface.
In above-mentioned steps 103, one preferably implementation is to divide M by high energy particle injection mode
Secondary injection ion in groove, forms the first conduction type well region, for being injected into the M time note for the first time
Entering, the energy injecting ion is sequentially reduced.Inject the diode structure after ion as shown in Figure 5.
Skilled person will appreciate that, the energy injecting particle is the least, then the degree of depth injecting ion is the least.Relatively
Good, in order to ensure that particle concentration is uniform, it is ensured that the concentration of the ion injected is the most identical every time.Inject from
After son, utilize high-temperature heat treatment process to drive in point ion injected for M time, form the first conductive type of trap
District, structure is as shown in Figure 6.
Illustrate in conjunction with Fig. 5, Fig. 6, it is assumed that point 3 injection ions in groove, inject ion for the first time
Energy is maximum, and that therefore injects is the deepest；Second time injects the energy of ion less than the ion injected for the first time
Energy, the degree of depth therefore injected is less than the degree of depth injected for the first time；Third time injects the energy of ion less than the
Secondary injects the energy of ion, and therefore third time injects the degree of depth that the degree of depth of ion is injected less than second time.By
All consistent in the ion energy concentration injected every time, therefore when utilizing high-temperature heat treatment process to drive in, every layer
The ion of injection is the most parallel to scatter, the ion concentration of the bottom now formed and the ion concentration of top
Identical, so, the ion concentration in the first conduction type well region formed is more uniform.
When carrying out ion implanting in this step, the energetic ion of injection can be boron ion, in specific implementation process
Technological parameter can select according to concrete diode structure, the embodiment of the present invention provide a kind of conventional
Technological parameter: implantation dosage is usually 1E15-5E15/cm2, Implantation Energy can be respectively Implantation Energy should
Between should be for 200KEV-500KEV.Preferably, being 450KEV for the first time, second time is 350KEV,
Third time is 250KEV.Concrete Implantation Energy is relevant with product design.Drive in temperature and be about 1150 DEG C.
In above-mentioned steps 104, epitaxial layer is laid the structure of photoresist as shown in Figure 7.Laying photoetching
Carry out photoetching after glue successively, inject ion, form the second conduction type source region, remove photoresist afterwards
Structure is as shown in Figure 8.When this step injection ion forms the second conduction type source region, the ion of injection can be
Phosphonium ion, the N-type source region after injection is half-turn channel-shaped, and its degree of depth is shallower relative to the p-well degree of depth.
In above-mentioned steps 105, make dielectric layer, front metal layer successively at the second epitaxial layer, form two poles
The anode of pipe, carries out photoetching and etching to dielectric layer in this step, and front metal layer is carried out photoetching and etching
After structure as it is shown in figure 9, dielectric layer is silicon dioxide and phosphorosilicate glass, formed dielectric layer temperature usual
For 880-950 DEG C, thickness is about 1 μm；Front metal is usually aluminum, silicon, copper alloy, and thickness is 3-4um
Left and right.
In step 106, make metal layer on back at the silicon substrate back side, form the structure of negative electrode of diode such as
Shown in Figure 10.Back process in this step includes that P ion, back-side gold are injected in substrate thinning, the back side
Belong to layer and make three kinds of techniques, generally use the mode of mechanical lapping to carry out substrate thinning；Substrate back injects P
Ion, makes substrate and metal layer on back form Ohmic contact, and metal layer on back is usually titanium, nickel, silver three layers
Metallic film, can use the method for evaporation or sputtering to make, and wherein, the thickness of ground floor titanium is usually
1000A, metallic film titanium and silicon substrate form silicide and ensure that contact performance is good, and second layer nickel is for adhering to
Layer, its thickness is usually 2000A, and third layer is silver metal thin film, its thickness about 1um, it is ensured that follow-up beat
The steps such as line do not go wrong.
In the embodiment of the present invention, owing to forming the first conduction type well region by high energy particle by the way of being injected,
So that the degree of depth of the first conduction type well region is deeper, and can be by the spacing control between the first conduction type well region
That makes is less, further as by a point M injection ion in described groove, forms the first conductive-type
Type well region, thus the particle concentration in the first conduction type well region can be made more uniform, thus obtain wider horizontal stroke
Stream district, the current regulator diode of better performances.
Based on identical design, the embodiment of the present invention also provides for a kind of diode that should make in aforementioned manners,
Concrete structure figure can be found in Figure 10.
In the embodiment of the present invention, owing to forming the first conduction type well region by high energy particle by the way of being injected,
So that the degree of depth of the first conduction type well region is deeper, and can be by the spacing control between the first conduction type well region
That makes is less, further as by a point M injection ion in described groove, forms the first conductive-type
Type well region, thus the particle concentration in the first conduction type well region can be made more uniform, thus obtain wider horizontal stroke
Stream district, the current regulator diode of better performances.
Although preferred embodiments of the present invention have been described, but those skilled in the art once know base
This creativeness concept, then can make other change and amendment to these embodiments.So, appended right is wanted
Ask and be intended to be construed to include preferred embodiment and fall into all changes and the amendment of the scope of the invention.
Obviously, those skilled in the art can carry out various change and modification without deviating from this to the present invention
Bright spirit and scope.So, if the present invention these amendment and modification belong to the claims in the present invention and
Within the scope of its equivalent technologies, then the present invention is also intended to change and including modification include these.
Claims (7)
1. a diode manufacturing method, it is characterised in that comprise the following steps:
Epitaxial layer is formed oxide layer and mask layer；
Described oxide layer and described mask layer are carried out photoetching and etching, forms ditch in described epi-layer surface
Groove；
Divided M time by high energy particle injection mode in described groove, inject ion, form the first conductive-type
Type well region；Wherein, M is the integer more than 1；
Carry out photoetching, injection the most successively, form the second conduction type source region；
Dielectric layer, front metal layer is made successively at described epitaxial layer；Metal layer on back is made at substrate back.
2. the method for claim 1, it is characterised in that described by high energy particle injection mode
Divide M time in described groove, inject ion, form the first conduction type well region, specifically include:
Divided M time by high energy particle injection mode in described groove, inject ion, form the first conductive-type
Type well region, for being injected into the M time injection for the first time, the energy injecting ion is sequentially reduced.
3. the method for claim 1, it is characterised in that
Described substrate is N-type substrate, and the most described epitaxial layer is N-type epitaxy layer, then the first conduction type is P
Type, the second conduction type is N-type；Or
Described substrate is P type substrate, and the most described epitaxial layer is p-type epitaxial layer, then the first conduction type is N
Type, the second conduction type is p-type.
4. the method for claim 1, it is characterised in that described high energy particle is boron.
5. the method for claim 1, it is characterised in that described formation oxide layer on epitaxial layer
And mask layer, specifically include:
At Grown epitaxial layer, generate oxide layer on said epitaxial layer there, described oxide layer sputters
Layer of metal titanium is to form mask layer.
6. the method for claim 1, it is characterised in that described by high energy particle injection mode
Divide M time in described groove, inject ion, form the first conduction type well region, specifically include:
Divided M time by high energy particle injection mode in described groove, inject ion, utilize high-temperature heat treatment
Technique drives in point ion injected for M time, forms the first conduction type well region.
7. a diode, it is characterised in that appointing described in described diode applications claim 1 to 6
One method makes.
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| CN201510016596.9A CN105845795A (en) | 2015-01-13 | 2015-01-13 | Diode and manufacturing method therefor |
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Application publication date: 20160810 |