CN105845795A - Diode and manufacturing method therefor - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 150000002500 ions Chemical class 0.000 claims abstract description 44
- 239000002245 particle Substances 0.000 claims abstract description 29
- 238000000034 method Methods 0.000 claims abstract description 24
- 238000002513 implantation Methods 0.000 claims description 36
- 239000000758 substrate Substances 0.000 claims description 26
- 229910052751 metal Inorganic materials 0.000 claims description 19
- 239000002184 metal Substances 0.000 claims description 19
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 7
- 238000000206 photolithography Methods 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- 239000010936 titanium Substances 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 4
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 230000007423 decrease Effects 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 abstract description 3
- 238000002347 injection Methods 0.000 abstract description 3
- 239000007924 injection Substances 0.000 abstract description 3
- 239000004020 conductor Substances 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 238000012986 modification Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- -1 boron ions Chemical class 0.000 description 2
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- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
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- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
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- 230000001681 protective effect Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
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- 235000012239 silicon dioxide Nutrition 0.000 description 1
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Abstract
Description
技术领域technical field
本发明实施例涉及半导体芯片制作工艺技术领域，尤其涉及一种二极管及其制作方法。Embodiments of the present invention relate to the technical field of semiconductor chip manufacturing technology, and in particular to a diode and a manufacturing method thereof.
背景技术Background technique
目前被广泛应用于LED器件中的恒流二极管是半导体恒流器件，该恒流二极管可以在较宽的电压范围内输出恒定的电流，并具有很高的动态阻抗。由于它们的恒流性能好、价格较低、使用简便，因此目前已广泛用于LED器件中。恒流二极管与LED器件的匹配性较好，而且恒流二极管能够避免LED器件受到过电流、过电压以及周波数的变动的损害，对LED器件起到了保护作用。The constant current diode widely used in LED devices is a semiconductor constant current device, which can output a constant current in a wide voltage range and has a high dynamic impedance. Because of their good constant current performance, low price, and easy use, they have been widely used in LED devices. The matching between the constant current diode and the LED device is good, and the constant current diode can prevent the LED device from being damaged by over-current, over-voltage and the change of the frequency number, and has a protective effect on the LED device.
恒流二极管的横流区域与恒流二极管的沟道的长度有关，沟道的长度是指恒流二极管中形成的P阱的深度。一般来说，沟道的长度越长，恒流二极管的恒流区越宽，器件性能越好。现有技术中通常采用注入、扩散等方式制作P阱，但是受工艺参数的限制，很难得到深的P阱，若采用沟槽注入的方式制作得到的P阱往往均匀性较差，很难保证恒流二极管具有稳定的起始电压和恒定电流。The transverse current region of the constant current diode is related to the length of the channel of the constant current diode, and the length of the channel refers to the depth of the P well formed in the constant current diode. Generally speaking, the longer the channel length, the wider the constant current region of the constant current diode, and the better the device performance. In the prior art, P wells are usually made by implantation, diffusion, etc., but due to the limitation of process parameters, it is difficult to obtain deep P wells. If the P wells made by trench implantation are often poor in uniformity, it is difficult to obtain deep P wells. Ensure that the constant current diode has a stable initial voltage and constant current.
综上，现有技术中存在着因制作工艺参数的限制，不容易得到较宽横流区的恒流二极管的技术问题。To sum up, there is a technical problem in the prior art that it is not easy to obtain a constant current diode with a wider cross current region due to the limitation of manufacturing process parameters.
发明内容Contents of the invention
本发明实施例提供一种二极管及其制作方法，用以解决现有技术中存在的因制作工艺参数的限制，不容易得到较宽横流区的恒流二极管的技术问题。Embodiments of the present invention provide a diode and a manufacturing method thereof, which are used to solve the technical problem existing in the prior art that it is not easy to obtain a constant-current diode with a wider cross-current region due to the limitation of manufacturing process parameters.
本发明实施例提供一种二极管制作方法，包括以下步骤：An embodiment of the present invention provides a method for manufacturing a diode, comprising the following steps:
在外延层上形成氧化层和掩膜层；forming an oxide layer and a mask layer on the epitaxial layer;
对氧化层和掩膜层进行光刻和刻蚀，在外延层表面形成沟槽；Perform photolithography and etching on the oxide layer and mask layer to form trenches on the surface of the epitaxial layer;
通过高能粒子注入方式分M次向沟槽内注入离子，形成第一导电类型阱区；其中，M为大于1的整数；Implanting ions into the trench M times by means of high-energy particle implantation to form a well region of the first conductivity type; wherein, M is an integer greater than 1;
在外延层上依次进行光刻、注入，形成第二导电类型源区；Perform photolithography and implantation on the epitaxial layer in sequence to form a source region of the second conductivity type;
在外延层依次制作介质层、正面金属层；在硅衬底背面制作背面金属层。Fabricate a dielectric layer and a front metal layer in sequence on the epitaxial layer; fabricate a back metal layer on the back of the silicon substrate.
本发明实施例中，由于通过高能粒子注入的方式形成第一导电类型阱区，从而使第一导电类型阱区的深度更深，且可将第一导电类型阱区之间的间距控制的更小，进一步由于通过分M次向所述沟槽内注入离子，形成第一导电类型阱区，从而可使第一导电类型阱区中的粒子浓度更加均匀，从而得到较宽横流区、性能较好的恒流二极管。In the embodiment of the present invention, since the well region of the first conductivity type is formed by means of high-energy particle implantation, the depth of the well region of the first conductivity type is deeper, and the distance between the well regions of the first conductivity type can be controlled to be smaller Further, by implanting ions into the trench in M times to form a well region of the first conductivity type, the particle concentration in the well region of the first conductivity type can be made more uniform, thereby obtaining a wider lateral flow region and better performance constant current diode.
较佳地，通过高能粒子注入方式分M次向沟槽内注入离子，形成第一导电类型阱区，具体包括：Preferably, ions are implanted into the trench M times by means of high-energy particle implantation to form a well region of the first conductivity type, which specifically includes:
通过高能粒子注入方式分M次向沟槽内注入离子，形成第一导电类型阱区，针对第一次注入至第M次注入，注入离子的能量依次减小。Ions are implanted into the trench M times by means of high-energy particle implantation to form a well region of the first conductivity type. From the first implantation to the Mth implantation, the energy of the implanted ions decreases sequentially.
较佳地，衬底为N型衬底，则外延层为N型外延层，则第一导电类型为P型，第二导电类型为N型；或者衬底为N型衬底，则外延层为P型外延层，则第一导电类型为N型，第二导电类型为P型。Preferably, the substrate is an N-type substrate, then the epitaxial layer is an N-type epitaxial layer, then the first conductivity type is P-type, and the second conductivity type is N-type; or the substrate is an N-type substrate, then the epitaxial layer is a P-type epitaxial layer, the first conductivity type is N-type, and the second conductivity type is P-type.
较佳地，高能粒子为硼。Preferably, the energetic particles are boron.
较佳地，在外延层上形成氧化层和掩膜层，具体包括：Preferably, an oxide layer and a mask layer are formed on the epitaxial layer, specifically including:
在衬底上生长外延层，在外延层上生成氧化层，在氧化层上溅射一层金属钛以形成掩膜层。An epitaxial layer is grown on the substrate, an oxide layer is formed on the epitaxial layer, and a layer of metal titanium is sputtered on the oxide layer to form a mask layer.
较佳地，通过高能粒子注入方式分M次向沟槽内注入离子，形成第一导电类型阱区，具体包括：Preferably, ions are implanted into the trench M times by means of high-energy particle implantation to form a well region of the first conductivity type, which specifically includes:
通过高能粒子注入方式分M次向沟槽内注入离子，利用高温热处理工艺驱入分M次注入的离子，形成第一导电类型阱区。Ions are implanted into the trench by M times by means of high-energy particle implantation, and the ions implanted by M times are driven in by a high-temperature heat treatment process to form a well region of the first conductivity type.
本发明实施例提供一种二极管，二极管上述方法制作。An embodiment of the present invention provides a diode, and the diode is manufactured by the method described above.
本发明实施例中，由于通过高能粒子注入的方式形成第一导电类型阱区，从而使第一导电类型阱区的深度更深，且可将第一导电类型阱区之间的间距控制的更小，进一步由于通过分M次向所述沟槽内注入离子，形成第一导电类型阱区，从而可使第一导电类型阱区中的粒子浓度更加均匀，从而得到较宽横流区、性能较好的恒流二极管。In the embodiment of the present invention, since the well region of the first conductivity type is formed by means of high-energy particle implantation, the depth of the well region of the first conductivity type is deeper, and the distance between the well regions of the first conductivity type can be controlled to be smaller Further, by implanting ions into the trench in M times to form a well region of the first conductivity type, the particle concentration in the well region of the first conductivity type can be made more uniform, thereby obtaining a wider lateral flow region and better performance constant current diode.
附图说明Description of drawings
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简要介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域的普通技术人员来讲，在不付出创造性劳动性的前提下，还可以根据这些附图获得其他的附图。In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following will briefly introduce the drawings that need to be used in the description of the embodiments. Obviously, the drawings in the following description are only some embodiments of the present invention. For Those of ordinary skill in the art can also obtain other drawings based on these drawings without any creative effort.
图1为本发明实施例提供的一种二极管的制作方法流程图；Fig. 1 is a flow chart of a method for manufacturing a diode provided by an embodiment of the present invention;
图2-图10为本发明实施例提供的一种二极管的制作过程中的结构示意图。2 to 10 are schematic structural diagrams during the manufacturing process of a diode provided by an embodiment of the present invention.
具体实施方式detailed description
为了使本发明的目的、技术方案及有益效果更佳清楚明白，以下结合附图及实施例，对本发明进行进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本发明，并不用于限定本发明。In order to make the purpose, technical solutions and beneficial effects of the present invention more clearly understood, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.
如图1所示，为本发明实施例提供的一种二极管的制作方法，该方法包括以下步骤：As shown in Figure 1, a method for manufacturing a diode provided by an embodiment of the present invention includes the following steps:
步骤101，在外延层上形成氧化层和掩膜层；Step 101, forming an oxide layer and a mask layer on the epitaxial layer;
步骤102，对氧化层和掩膜层进行光刻和刻蚀，在外延层表面形成沟槽；Step 102, performing photolithography and etching on the oxide layer and the mask layer to form grooves on the surface of the epitaxial layer;
步骤103，通过高能粒子注入方式分M次向沟槽内注入离子，形成第一导电类型阱区；其中，M为大于1的整数；Step 103, implanting ions into the trench M times by means of high-energy particle implantation to form a well region of the first conductivity type; wherein, M is an integer greater than 1;
步骤104，在外延层上依次进行光刻、注入，形成第二导电类型源区；Step 104, sequentially performing photolithography and implantation on the epitaxial layer to form a second conductivity type source region;
步骤105，在外延层依次制作介质层、正面金属层；Step 105, making a dielectric layer and a front metal layer in sequence on the epitaxial layer;
步骤106，在硅衬底背面制作背面金属层。Step 106, fabricating a back metal layer on the back of the silicon substrate.
由于通过高能粒子注入的方式形成第一导电类型阱区，从而使第一导电类型阱区的深度更深，且可将第一导电类型阱区之间的间距控制的更小，进一步由于通过分M次向所述沟槽内注入离子，形成第一导电类型阱区，从而可使第一导电类型阱区中的粒子浓度更加均匀，从而得到较宽横流区、性能较好的恒流二极管。Since the well region of the first conductivity type is formed by means of high-energy particle implantation, the depth of the well region of the first conductivity type is deeper, and the distance between the well regions of the first conductivity type can be controlled to be smaller. Ions are implanted into the trench for a second time to form a well region of the first conductivity type, so that the particle concentration in the well region of the first conductivity type can be made more uniform, thereby obtaining a constant current diode with a wider lateral flow region and better performance.
在本实施例中，衬底为N型衬底，则第一外延层为生长在N型衬底上的N型硅片，衬底为P型衬底，则第一外延层为生长在P型衬底上的P型硅片，具体根据器件的设计来决定。若外延层为N型外延层，则第一导电类型为P型，第二导电类型为N型；若外延层为P型外延层，则第一导电类型为N型，第二导电类型为P型。In this embodiment, the substrate is an N-type substrate, then the first epitaxial layer is an N-type silicon chip grown on the N-type substrate, and the substrate is a P-type substrate, then the first epitaxial layer is grown on a P-type substrate. The P-type silicon chip on the P-type substrate is determined according to the design of the device. If the epitaxial layer is an N-type epitaxial layer, the first conductivity type is P-type, and the second conductivity type is N-type; if the epitaxial layer is a P-type epitaxial layer, the first conductivity type is N-type, and the second conductivity type is P type.
下面实施例以外延层为N型外延层，第一导电类型为P型，第二导电类型为N型为例进行介绍。The following embodiments are described as examples where the epitaxial layer is an N-type epitaxial layer, the first conductivity type is P-type, and the second conductivity type is N-type.
上述步骤101中，在衬底上生长外延层，在外延层上生成氧化层，在氧化层上溅射一层金属钛以形成掩膜层的结构如图2所示。本步骤中，氧化层可为常规的氧化硅。掩膜层可为金属钛、三氧化二铝等，可依据具体二极管结构进行选择。In the above step 101, an epitaxial layer is grown on the substrate, an oxide layer is formed on the epitaxial layer, and a layer of metal titanium is sputtered on the oxide layer to form a mask layer, as shown in FIG. 2 . In this step, the oxide layer can be conventional silicon oxide. The mask layer can be metal titanium, aluminum oxide, etc., and can be selected according to the specific diode structure.
上述步骤102，在掩膜层上铺设光刻胶的结构如图3所示，对氧化层和掩膜层进行光刻和刻蚀，在外延层表面形成沟槽的结构如图4所示。In step 102 above, the structure of laying photoresist on the mask layer is shown in FIG. 3 , and the oxide layer and mask layer are photolithographically and etched, and the structure of forming grooves on the surface of the epitaxial layer is shown in FIG. 4 .
上述步骤103中，一种较佳的实现方式为，通过高能粒子注入方式分M次向沟槽内注入离子，形成第一导电类型阱区，针对第一次注入至第M次注入，注入离子的能量依次减小。注入离子之后的二极管结构如图5所示。In the above step 103, a preferred implementation method is to implant ions into the trench M times by means of high-energy particle implantation to form a well region of the first conductivity type, and for the first implantation to the Mth implantation, implant ions energy decreases in turn. The diode structure after ion implantation is shown in FIG. 5 .
本领域技术人员可知，注入粒子的能量越小，则注入离子的深度越小。较佳的，为了保证粒子浓度均匀，可保证每次注入的离子的浓度均相同。注入离子之后，利用高温热处理工艺驱入分M次注入的离子，形成第一导电类型阱区，结构如图6所示。Those skilled in the art know that the smaller the energy of implanted particles, the smaller the depth of implanted ions. Preferably, in order to ensure uniform particle concentration, it can be ensured that the concentration of ions injected each time is the same. After the ions are implanted, the ions implanted M times are driven in by a high-temperature heat treatment process to form a well region of the first conductivity type, the structure of which is shown in FIG. 6 .
结合图5、图6举例，假设分3次向沟槽内注入离子，第一次注入离子的能量最大，因此注入的最深；第二次注入离子的能量小于第一次注入的离子的能量，因此注入的深度小于第一次注入的深度；第三次注入离子的能量小于第二次注入离子的能量，因此第三次注入离子的深度小于第二次注入的深度。由于每次注入的离子能量浓度均一致，因此在利用高温热处理工艺驱入时，每层注入的离子均平行散开，此时所形成的最底层的离子浓度与最顶层的离子浓度相同，如此，所形成的第一导电类型阱区内的离子浓度更加均匀。With reference to Figure 5 and Figure 6 as an example, assuming that ions are implanted into the trench in three times, the energy of the first implanted ions is the largest, so the implantation is the deepest; the energy of the second implanted ions is less than the energy of the first implanted ions, Therefore, the depth of implantation is smaller than the depth of the first implantation; the energy of the ions implanted for the third time is less than the energy of the ions for the second implantation, so the depth of the ions implanted for the third time is smaller than the depth of the second implantation. Since the ion energy concentration of each implantation is the same, when the high-temperature heat treatment process is used to drive in, the implanted ions of each layer are scattered in parallel, and the ion concentration of the bottom layer formed at this time is the same as that of the top layer. , the ion concentration in the formed well region of the first conductivity type is more uniform.
本步骤中进行离子注入时，注入的高能离子可为硼离子，具体实施过程中的工艺参数可根据具体的二极管结构进行选用，本发明实施例提供一种常用的工艺参数：注入剂量通常为1E15-5E15个/cm2，注入能量可分别为注入能量应该为200KEV-500KEV之间。优选的，第一次为450KEV，第二次为350KEV，第三次为250KEV。具体的注入能量和产品设计有关。驱入温度约为1150℃。When performing ion implantation in this step, the implanted high-energy ions can be boron ions, and the process parameters in the specific implementation process can be selected according to the specific diode structure. The embodiment of the present invention provides a common process parameter: the implantation dose is usually 1E15 -5E15 pcs/cm 2 , the injection energy can be between 200KEV and 500KEV. Preferably, the first time is 450KEV, the second time is 350KEV, and the third time is 250KEV. The specific injected energy is related to product design. The drive-in temperature is about 1150°C.
上述步骤104中，在外延层上铺设光刻胶的结构如图7所示。在铺设光刻胶之后依次进行光刻、注入离子，形成第二导电类型源区，之后去除光刻胶的结构如图8所示。此步骤注入离子形成第二导电类型源区时，注入的离子可为磷离子，注入后的N型源区为半圈槽状，其深度相对P阱深度较浅。In the above step 104, the structure of laying photoresist on the epitaxial layer is shown in FIG. 7 . After the photoresist is laid, photolithography and ion implantation are performed sequentially to form the source region of the second conductivity type, and the structure after removing the photoresist is shown in FIG. 8 . In this step, when ions are implanted to form the source region of the second conductivity type, the implanted ions may be phosphorous ions, and the implanted N-type source region is in the shape of a half-circle groove, and its depth is shallower than that of the P well.
上述步骤105中，在第二外延层依次制作介质层、正面金属层，形成二极管的阳极，本步骤中对介质层进行光刻和刻蚀，对正面金属层进行光刻和刻蚀后的结构如图9所示，介质层为二氧化硅和磷硅玻璃，形成介质层的温度通常为880-950℃，厚度约为1μm；正面金属通常为铝、硅、铜合金，厚度为3-4um左右。In the above step 105, the dielectric layer and the front metal layer are sequentially fabricated on the second epitaxial layer to form the anode of the diode. In this step, the dielectric layer is photolithographically and etched, and the front metal layer is photolithographically and etched. As shown in Figure 9, the dielectric layer is made of silicon dioxide and phospho-silicate glass. The temperature for forming the dielectric layer is usually 880-950°C, and the thickness is about 1 μm; the front metal is usually aluminum, silicon, copper alloy, and the thickness is 3-4um. about.
步骤106中，在硅衬底背面制作背面金属层，形成二极管的阴极的结构如图10所示。在本步骤中的背面工艺包括衬底减薄、背面注入P离子、背面金属层制作三种工艺，通常采用机械研磨的方式进行衬底减薄；衬底背面注入P离子，使衬底和背面金属层形成欧姆接触，背面金属层通常为钛、镍、银三层金属薄膜，可以采用蒸镀或溅射的方法制作，其中，第一层钛的厚度通常为1000A，金属薄膜钛和硅衬底形成硅化物保证接触特性良好，第二层镍为粘附层，其厚度通常为2000A，第三层为银金属薄膜，其厚度约1um，保证后续打线等步骤不出问题。In step 106, a back metal layer is formed on the back of the silicon substrate to form the structure of the cathode of the diode as shown in FIG. 10 . The backside process in this step includes substrate thinning, backside implantation of P ions, and backside metal layer fabrication. Usually, the substrate is thinned by mechanical grinding; the backside of the substrate is implanted with P ions to make the substrate and the backside The metal layer forms an ohmic contact, and the metal layer on the back is usually a three-layer metal film of titanium, nickel, and silver, which can be produced by evaporation or sputtering, wherein the thickness of the first layer of titanium is usually 1000A, and the metal film titanium and silicon lining Silicide is formed on the bottom to ensure good contact characteristics. The second layer of nickel is an adhesion layer, and its thickness is usually 2000A. The third layer is a silver metal film, with a thickness of about 1um, to ensure that there are no problems in the subsequent steps such as wiring.
本发明实施例中，由于通过高能粒子注入的方式形成第一导电类型阱区，从而使第一导电类型阱区的深度更深，且可将第一导电类型阱区之间的间距控制的更小，进一步由于通过分M次向所述沟槽内注入离子，形成第一导电类型阱区，从而可使第一导电类型阱区中的粒子浓度更加均匀，从而得到较宽横流区、性能较好的恒流二极管。In the embodiment of the present invention, since the well region of the first conductivity type is formed by means of high-energy particle implantation, the depth of the well region of the first conductivity type is deeper, and the distance between the well regions of the first conductivity type can be controlled to be smaller Further, by implanting ions into the trench in M times to form a well region of the first conductivity type, the particle concentration in the well region of the first conductivity type can be made more uniform, thereby obtaining a wider lateral flow region and better performance constant current diode.
基于相同的构思，本发明实施例还提供一种应用上述方法制成的二极管，具体结构图可参见图10。Based on the same idea, an embodiment of the present invention also provides a diode fabricated by the above method, and the specific structure diagram can be referred to FIG. 10 .
本发明实施例中，由于通过高能粒子注入的方式形成第一导电类型阱区，从而使第一导电类型阱区的深度更深，且可将第一导电类型阱区之间的间距控制的更小，进一步由于通过分M次向所述沟槽内注入离子，形成第一导电类型阱区，从而可使第一导电类型阱区中的粒子浓度更加均匀，从而得到较宽横流区、性能较好的恒流二极管。In the embodiment of the present invention, since the well region of the first conductivity type is formed by means of high-energy particle implantation, the depth of the well region of the first conductivity type is deeper, and the distance between the well regions of the first conductivity type can be controlled to be smaller Further, by implanting ions into the trench in M times to form a well region of the first conductivity type, the particle concentration in the well region of the first conductivity type can be made more uniform, thereby obtaining a wider lateral flow region and better performance constant current diode.
尽管已描述了本发明的优选实施例，但本领域内的技术人员一旦得知了基本创造性概念，则可对这些实施例作出另外的变更和修改。所以，所附权利要求意欲解释为包括优选实施例以及落入本发明范围的所有变更和修改。While preferred embodiments of the invention have been described, additional changes and modifications to these embodiments can be made by those skilled in the art once the basic inventive concept is appreciated. Therefore, it is intended that the appended claims be construed to cover the preferred embodiment as well as all changes and modifications which fall within the scope of the invention.
显然，本领域的技术人员可以对本发明进行各种改动和变型而不脱离本发明的精神和范围。这样，倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内，则本发明也意图包括这些改动和变型在内。Obviously, those skilled in the art can make various changes and modifications to the present invention without departing from the spirit and scope of the present invention. Thus, if these modifications and variations of the present invention fall within the scope of the claims of the present invention and equivalent technologies thereof, the present invention also intends to include these modifications and variations.
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