CN105845714B - 一种基于桥接生长的纳米线器件及其制备方法 - Google Patents
一种基于桥接生长的纳米线器件及其制备方法 Download PDFInfo
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- CN105845714B CN105845714B CN201610213762.9A CN201610213762A CN105845714B CN 105845714 B CN105845714 B CN 105845714B CN 201610213762 A CN201610213762 A CN 201610213762A CN 105845714 B CN105845714 B CN 105845714B
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
- H01L29/0669—Nanowires or nanotubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
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CN107331705B (zh) * | 2017-04-18 | 2020-10-30 | 黄辉 | 一种基于桥接生长的纳米线器件及其制备方法 |
CN110116987A (zh) * | 2019-03-15 | 2019-08-13 | 大连理工大学 | 一种半导体纳米线传感器 |
CN113174584A (zh) * | 2021-01-16 | 2021-07-27 | 黄辉 | 一种多孔氮化物电极及其制备方法和应用 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN103311305A (zh) * | 2013-06-13 | 2013-09-18 | 中国科学院半导体研究所 | 硅基横向纳米线多面栅晶体管及其制备方法 |
CN103346070A (zh) * | 2013-06-13 | 2013-10-09 | 中国科学院半导体研究所 | 硅基iii-v族纳米线选区横向外延生长的方法 |
CN104124272A (zh) * | 2014-07-14 | 2014-10-29 | 华南师范大学 | 集成非极性GaN纳米线高电子迁移率晶体管及其制备方法 |
CN104867868A (zh) * | 2015-06-01 | 2015-08-26 | 中国科学院重庆绿色智能技术研究院 | 无催化剂横向生长纳米线网电路的方法 |
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CN101894745A (zh) * | 2010-06-17 | 2010-11-24 | 复旦大学 | 一种基于半导体纳米线形成的逻辑门及其制备方法 |
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN103311305A (zh) * | 2013-06-13 | 2013-09-18 | 中国科学院半导体研究所 | 硅基横向纳米线多面栅晶体管及其制备方法 |
CN103346070A (zh) * | 2013-06-13 | 2013-10-09 | 中国科学院半导体研究所 | 硅基iii-v族纳米线选区横向外延生长的方法 |
CN104124272A (zh) * | 2014-07-14 | 2014-10-29 | 华南师范大学 | 集成非极性GaN纳米线高电子迁移率晶体管及其制备方法 |
CN104867868A (zh) * | 2015-06-01 | 2015-08-26 | 中国科学院重庆绿色智能技术研究院 | 无催化剂横向生长纳米线网电路的方法 |
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Effective date of registration: 20220909 Address after: Room 601, building 4, Shenzhen new generation industrial park, 136 Zhongkang Road, Meidu community, Meilin street, Futian District, Shenzhen, Guangdong 518000 Patentee after: SHENZHEN MICRO & NANO INTEGRATED CIRCUITS AND SYSTEMS Research Institute Address before: Room 2201, Building C3, Nanshan Zhiyuan, No. 1001, Xueyuan Avenue, Changyuan Community, Taoyuan Street, Nanshan District, Shenzhen, Guangdong 518000 Patentee before: Shenzhen gansheng Technology Co.,Ltd. |
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