CN112635556A - 一种增强型hemt器件及其制备方法 - Google Patents
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Abstract
本发明公开了一种增强型HEMT器件及其制备方法,包括SiC衬底、AlN缓冲层、GaN沟道层、AlN插入层、Al组分渐变的AlGaN势垒层、Mg掺杂Al组分渐变的AlGaN势垒层、SiNX钝化层、漏金属电极、源金属电极和栅金属电极,本发明采用Al组分渐变的AlGaN势垒层来替代AlGaN势垒层,降低了Mg扩散的难度,避免了传统P型栅因刻蚀所产生的机械损伤,并提高了器件的栅控能力,有利于实现高阈值电压的GaN增强型功率器件。
Description
技术领域
本发明涉及半导体器件领域,具体涉及一种增强型HEMT器件及其制备方法。
背景技术
功率半导体器件是实现能源与电能的转换与利用的关键,为了以绿色发展的方式来满足我们社会迅速增长的能源需求,发展智能、高效的功率转换系统是当今社会发展的趋势。进入二十世纪以来,随着材料生长、器件设计和半导体制造技术的不断发展和完善,基于Si材料的半导体功率器件的功率密度已经接近极限,不足以应对当前市场的需要。为了满足市场的需要,高击穿电压、低导通电阻、高工作温度、低开关损耗以及高开关速度的GaN基功率器件己成为全球研究的热点。
对于开关转换应用,GaN基耗尽型功率器件不仅会给整个系统引入安全隐患,而且会增加驱动电路设计的复杂性,因此制备GaN基增强型功率器件具有至关重要的意义。目前实现增强型器件的主要方法有凹槽栅结构、F离子注入技术、P-GaN栅帽层结构等。在以上方法中,目前能应用于商业用途的增强型功率器件采用的方法是P-GaN栅帽层结构。为了去实现具有P-GaN栅帽层结构的增强型器件,需要对势垒层上面的P-GaN进行刻蚀处理,只留下栅极下方的P-GaN。在整个刻蚀的过程中,不仅难以控制刻蚀的精度以及在刻蚀的过程中,容易造成因刻蚀而造成的机械性损伤,而且刻蚀过程中还产生了大量因刻蚀而引起的缺陷,同样也会影响器件的性能。通过利用Mg掺杂辅助扩散到AlGaN势垒层来代替传统的P-GaN栅帽层有利于避免以上出现的问题,但是随着AlGaN中Al组分的提高,Mg扩散的难度随之而增加,进一步限制了Mg掺杂扩散的深度和浓度。
发明内容
为了克服现有技术存在的缺点与不足,本发明首要目的提供一种增强型HEMT器件,具体是一种基于SiC衬底镁掺杂Al组分渐变的AlGaN势垒层增强型HEMT器件。
本发明的另一个目的是提供一种增强型HEMT器件的制备方法。
本发明的首要目的采用如下技术方案:
一种增强型HEMT器件,包括:SiC衬底、AlN缓冲层、GaN沟道层、AlN插入层、Al组分渐变的AlGaN势垒层、Mg掺杂Al组分渐变的AlGaN势垒层、SiNX钝化层、漏金属电极、源金属电极和栅金属电极,其中:
所述SiC衬底、AlN缓冲层、GaN沟道层、AlN插入层、Al组分渐变的AlGaN势垒层和Mg掺杂Al组分渐变的AlGaN势垒层由下至上依次层叠;
所述SiNX钝化层覆盖在除源、漏、栅金属电极区域外的Al组分渐变的AlGaN势垒层上表面区域;
所述漏金属电极和源金属电极分别位于Al组分渐变的AlGaN势垒层上未被SiNX钝化层覆盖的两侧区域,漏金属电极和源金属电极与Al组分渐变的AlGaN势垒层之间形成欧姆接触;
所述栅金属电极位于Mg掺杂Al组分渐变的AlGaN势垒层上未被SiNX钝化层覆盖的中间区域,栅金属电极与Mg掺杂Al组分渐变的AlGaN势垒层之间形成肖特基接触。
优选地,所述AlN缓冲层的厚度为1~3μm。
优选地,所述GaN沟道层的厚度为1~3μm。
优选地,所述AlN插入层的厚度为1nm。
优选地,所述Al组分渐变的AlGaN势垒层的厚度为5~50nm,铝的组分变化由下至上为50~0%。
优选地,所述金属Mg的厚度为50-200nm。
优选地,所述SiNX钝化层的厚度为50~150nm。
优选地,所述漏金属电极和源金属电极由Ti、Al、Ni和Au四层金属组成。
优选地,所述栅金属电极由Ni和Au两层金属组成。
本发明的次要目的是采用如下技术方案:
一种增强型HEMT器件的制备方法,包括如下步骤:
S1在SiC衬底上外延生长AlN缓冲层;
S2在AlN缓冲层上外延GaN沟道层;
S3在GaN沟道层上外延生长AlN插入层;
S4在AlN插入层上外延生长Al组分渐变的AlGaN势垒层;
S5对S4所得的外延片进行光刻,暴露出栅极区域,进行蒸镀金属Mg、剥离、退火,栅极下的区域形成Mg扩散的P型Al组分渐变的AlGaN层;
S6对S5所得的外延片进行光刻,暴露出源、漏金属电极区域,进行蒸镀、剥离、退火,形成漏、源金属电极;
S7对S6所得的外延片进行台面隔离;
S8,对S7所得的外延片进行光刻,暴露出栅金属电极区域,通过蒸镀、剥离,形成栅金属电极;
S9,在S8所得的外延片上生长SiNX钝化层;
S10,在S9的基础上,经过化学腐蚀处理去除源、漏、栅金属电极区域下的SiNX钝化层,通过蒸镀、剥离,引出源、漏、栅金属电极。
优选地,S1中所述的外延生长AlN缓冲层采用金属有机化学气相沉积(MOCVD)进行生长制备,生长温度为850~950℃。
优选地,S2中所述的外延生长GaN沟道层采用金属有机化学气相沉积(MOCVD)进行生长制备,生长温度为850~950℃。
优选地,S3中所述的外延生长AlN插入层采用金属有机化学气相沉积(MOCVD)进行生长制备,生长温度为850~950℃。
优选地,S4中所述的外延生长Al组分渐变的AlGaN势垒层采用金属有机化学气相沉积(MOCVD)进行生长制备,生长温度为850~950℃,具体为:在衬底温度为900~1000℃下,通入(三甲基铝)TMAl、TMGa与NH3在衬底表面作用,TMAl和TMGa以恒定的摩尔量变化,NH3流量为10~30sccm,通入TMAl、TMGa和NH3的时间均为40~60s,不管Al组成如何变化,保持AlGaN生长速率都是恒定的。
优选地,S5中所述的蒸镀Mg的厚度为50-200nm,退火温度为550-650℃,退火时间为0.3~1h,栅极下方区域形成Mg掺杂Al组分渐变的势垒层;
优选地,S6中欧姆接触所述的快速热退火,具体为:退火气氛为N2,退火温度为800~900℃,保温时间为20~40s,升温速率为15~20℃/s。
优选地,S7中台面隔离即刻蚀至GaN沟道层。
优选地,S8对所得的外延片进行光刻,暴露出栅金属电极区域,通过蒸镀、剥离,形成栅金属电极;
优选地,S9所述SiNX钝化层采用等离子增强化学气相沉积(PECVD)生长制备,生长温度为230~320℃;
优选地,S10中所述的化学腐蚀处理,具体为:采用质量分数比为HF:HN4F=1:7-1:5的缓冲氧化物刻蚀剂(BOE)溶液浸泡50~100s,通过蒸镀、剥离,引出源、漏、栅金属电极。
本发明的有益效果:
(1)本发明采用Al组分渐变的AlxGa1-xN势垒层(x=50~0%)来替代AlGaN势垒层,主要是由于随着AlGaN中Al组分的增加,AlGaN的晶格常数逐渐减少,使得Mg难以在AlGaN中扩散。通过利用Mg扩散到Al组分渐变的AlGaN势垒层,有效降低了扩散的难度,提高Mg扩散的浓度。
(2)本发明器件的P型Al组分渐变的AlxGa1-xN势垒层(x=0~40%),进一步降低了栅极与势垒层之间的距离,增强栅控能力,避免了因刻蚀等问题所产生的损伤,减少表面缺陷。
(3)本发明在实现增强型功率器件的过程中,随着Mg扩散的浓度和深度的增加,有利于提高器件的阈值电压等电学特性。
附图说明
图1是本发明实施例1的结构示意图;
图2是本发明实施例1的转移特性曲线图(VD=6V,阈值电压为1.6V)。
图3是本发明实施例1的输出特性曲线图(VG=1~5)。
具体实施方式
下面结合实施例及附图,对本发明作进一步地详细说明,但本发明的实施方式不限于此。
实施例1
一种基于SiC衬底镁掺杂Al组分渐变的AlGaN势垒层增强型HEMT器件,其结构示意图如图1所示。包括:SiC衬底1、AlN缓冲层2、GaN沟道层3、AlN插入层4、Al组分渐变的AlGaN势垒层5、Mg掺杂Al组分渐变的AlGaN势垒层6、SiNX钝化层7、漏金属电极8、源金属电极9和栅金属电极10,其中:
所述SiC衬底1、AlN缓冲层2、GaN沟道层3、AlN插入层4、Al组分渐变的AlGaN势垒层5和Mg掺杂Al组分渐变的AlGaN势垒层6由下至上依次层叠;
所述SiNX钝化层7覆盖在除源金属电极9、漏金属电极8、栅金属电极10区域外的Al组分渐变的AlGaN势垒层5上表面区域;
所述漏金属电极8和源金属电极9分别位于Al组分渐变的AlGaN势垒层5上未被SiNX钝化层7覆盖的两侧区域,漏金属电极8和源金属电极9与Al组分渐变的AlGaN势垒层之间形成欧姆接触;
所述栅金属电极10位于Mg掺杂Al组分渐变的AlGaN势垒层6上未被SiNX钝化层7覆盖的中间区域,栅金属电极10与Mg掺杂Al组分渐变的AlGaN势垒层6之间形成肖特基接触。
实施例2
制备实施例1所述的基于SiC衬底镁掺杂Al组分渐变的AlGaN势垒层增强型HEMT器件通过如下方法制备,包括:
步骤1,通过在SiC衬底上外延生长AlN缓冲层采用金属有机化学气相沉积(MOCVD)进行生长制备,生长温度为850℃;
步骤2,接着在步骤1中所得外延片上继续采用金属有机化学气相沉积(MOCVD)进行外延生长GaN沟道层,生长温度为850℃;
步骤3,在步骤2的基础上采用金属有机化学气相沉积(MOCVD)进行外延生长AlN插入层,生长温度为850℃;
步骤4,对步骤3上所得的外延片采用金属有机化学气相沉积(MOCVD)进行外延生长Al组分渐变的AlGaN势垒层生长制备,生长温度为850℃,具体为:在衬底温度为900℃下,通入(三甲基铝)TMAl、TMGa与NH3在衬底表面作用,TMAl和TMGa以恒定的摩尔量变化,NH3流量为10sccm,通入TMAl、TMGa和NH3的时间均为40s,不管Al组成如何变化,保持AlGaN生长速率都是恒定的;
步骤5,对步骤4所得的外延片进行光刻、蒸镀,其中金属镁的厚度为50nm,退火温度为550℃,退火时间为0.3h,栅极下方区域形成Mg掺杂Al组分渐变的势垒层;
步骤6,对步骤5所得的外延片进行光刻、蒸镀源、漏接触电极,然后进行快速热退火,具体为:退火气氛为N2,退火温度为800℃,保温时间为20s,升温速率为15℃/s。
步骤7,将步骤6所得的外延片进行台面隔离,刻蚀至GaN沟道层。
步骤8,对步骤7所得的外延片进行光刻,暴露出栅金属电极区域,通过蒸镀、剥离,形成栅金属电极;
步骤9,所述SiNX钝化层采用等离子增强化学气相沉积(PECVD)生长制备,生长温度为230℃;
步骤10,对步骤9所得的外延片进行化学腐蚀处理去除源、漏、栅金属电极区域下的SiNX钝化层,具体为:采用质量分数比为HF:HN4F=1:5的缓冲氧化物刻蚀剂(BOE)溶液浸泡50s,然后进行光刻、蒸镀和剥离金属电极,引出源、漏、栅金属电极。
实施例3
制备如实施例1所述的基于SiC衬底镁掺杂Al组分渐变的AlGaN势垒层增强型HEMT器件通过如下方法,包括如下步骤:
步骤1,通过在Si衬底上外延生长AlN缓冲层采用金属有机化学气相沉积(MOCVD)进行生长制备,生长温度为900℃;
步骤2,接着在步骤1中所得外延片上继续采用金属有机化学气相沉积(MOCVD)进行外延生长GaN沟道层,生长温度为900℃;
步骤3,在步骤2的基础上采用金属有机化学气相沉积(MOCVD)进行外延生长AlN插入层,生长温度为900℃;
步骤4,对步骤3上所得的外延片采用金属有机化学气相沉积(MOCVD)进行外延生长Al组分渐变的AlGaN势垒层生长制备,生长温度为900℃,具体为:在衬底温度为950℃下,通入(三甲基铝)TMAl、TMGa与NH3在衬底表面作用,TMAl和TMGa以恒定的摩尔量变化,NH3流量为20sccm,通入TMAl、TMGa和NH3的时间均为50s,不管Al组成如何变化,保持AlGaN生长速率都是恒定的;
步骤5,对步骤4所得的外延片进行光刻、蒸镀,其中金属镁的厚度为100nm,退火温度为600℃,退火时间为0.65h,栅极下方区域形成Mg掺杂Al组分渐变的势垒层;
步骤6,对步骤5所得的外延片进行光刻、蒸镀源、漏接触电极,然后进行快速热退火,具体为:退火气氛为N2,退火温度为850℃,保温时间为30s,升温速率为17℃/s。
步骤7,将步骤6所得的外延片进行台面隔离,刻蚀至GaN沟道层。
步骤8,对步骤7所得的外延片进行光刻,暴露出栅金属电极区域,通过蒸镀、剥离,形成栅金属电极;
步骤9,所述SiNX钝化层采用等离子增强化学气相沉积(PECVD)生长制备,生长温度为275℃;
步骤10,对步骤9所得的外延片进行化学腐蚀处理去除源、漏、栅金属电极区域下的SiNX钝化层,具体为:采用质量分数比为HF:HN4F=1:6的缓冲氧化物刻蚀剂(BOE)溶液浸泡75s,然后进行光刻、蒸镀和剥离金属电极,引出源、漏、栅电极。
实施例4
制备如实施例1所述的基于SiC衬底镁掺杂Al组分渐变的AlGaN势垒层增强型HEMT器件的方法,包括如下步骤:
步骤1,通过在Si衬底上外延生长AlN缓冲层采用金属有机化学气相沉积(MOCVD)进行生长制备,生长温度为950℃;
步骤2,接着在步骤1中所得外延片上继续采用金属有机化学气相沉积(MOCVD)进行外延生长GaN沟道层,生长温度为950℃;
步骤3,在步骤2的基础上采用金属有机化学气相沉积(MOCVD)进行外延生长AlN插入层,生长温度为950℃;
步骤4,对步骤3上所得的外延片采用金属有机化学气相沉积(MOCVD)进行外延生长Al组分渐变的AlGaN势垒层生长制备,生长温度为950℃,具体为:在衬底温度为1000℃下,通入(三甲基铝)TMAl、TMGa与NH3在衬底表面作用,TMAl和TMGa以恒定的摩尔量变化,NH3流量为30sccm,通入TMAl、TMGa和NH3的时间均为60s,不管Al组成如何变化,保持AlGaN生长速率都是恒定的;
步骤5,对步骤4所得的外延片进行光刻、蒸镀,其中金属镁的厚度为200nm,退火温度为650℃,退火时间为1h,栅极下方区域形成Mg掺杂Al组分渐变的势垒层;
步骤6,对步骤5所得的外延片进行光刻、蒸镀源、漏接触电极,然后进行快速热退火,具体为:退火气氛为N2,退火温度为900℃,保温时间为40s,升温速率为20℃/s。
步骤7,将步骤6所得的外延片进行台面隔离,刻蚀至GaN沟道层。
步骤8,对步骤7所得的外延片进行光刻,暴露出栅金属电极区域,通过蒸镀、剥离,形成栅金属电极;
步骤9,所述SiNX钝化层采用等离子增强化学气相沉积(PECVD)生长制备,生长温度为320℃;
步骤10,对步骤9所得的外延片进行化学腐蚀处理去除源、漏、栅金属电极区域下的SiNX钝化层,具体为:采用质量分数比为HF:HN4F=1:7的缓冲氧化物刻蚀剂(BOE)溶液浸泡100s,然后进行光刻、蒸镀和剥离金属电极,引出源、漏、栅电极。
图2说明本方法制备的HEMT器件,阈值电压为1.6V。
图3说明本方法制备的HEMT器件,它的最大输出电流为200mA/mm。
上述实施例为本发明较佳的实施方式,但本发明的实施方式并不受所述实施例的限制,其他的任何未背离本发明的精神实质与原理下所作的改变、修饰、替代、组合、简化,均应为等效的置换方式,都包含在本发明的保护范围之内。
Claims (10)
1.一种增强型HEMT器件,其特征在于,包括SiC衬底、AlN缓冲层、GaN沟道层、AlN插入层、Al组分渐变的AlGaN势垒层、Mg掺杂Al组分渐变的AlGaN势垒层、SiNX钝化层、漏金属电极、源金属电极和栅金属电极;
所述SiC衬底、AlN缓冲层、GaN沟道层、AlN插入层、Al组分渐变的AlGaN势垒层和Mg掺杂Al组分渐变的AlGaN势垒层由下至上依次层叠;
所述SiNX钝化层覆盖在除源、漏、栅金属电极区域外的Al组分渐变的AlGaN势垒层上表面区域;
所述漏金属电极和源金属电极分别位于Al组分渐变的AlGaN势垒层上未被SiNX钝化层覆盖的两侧区域,漏金属电极和源金属电极与Al组分渐变的AlGaN势垒层之间形成欧姆接触;
所述栅金属电极位于Mg掺杂Al组分渐变的AlGaN势垒层上未被SiNX钝化层覆盖的中间区域,栅金属电极与Mg掺杂Al组分渐变的AlGaN势垒层之间形成肖特基接触。
2.根据权利要求1所述的增强型HEMT器件,其特征在于,所述AlN缓冲层的厚度为1~3μm。
3.根据权利要求1所述的增强型HEMT器件,其特征在于,所述GaN沟道层的厚度为1~3μm。
4.根据权利要求1所述的增强型HEMT器件,其特征在于,所述AlN插入层的厚度为1nm。
5.根据权利要求1所述的增强型HEMT器件,其特征在于,Al组分渐变的AlGaN势垒层的厚度为5~50nm,Al的组分变化由下至上为50~0%。
6.根据权利要求1所述的增强型HEMT器件,其特征在于,金属Mg的厚度为50-200nm。
7.根据权利要求1所述的增强型HEMT器件,其特征在于,所述SiNX钝化层的厚度为50~150nm。
8.一种制备权利要求1-7任一项所述的增强型HEMT器件的方法,其特征在于,包括如下步骤:
S1在SiC衬底上外延生长AlN缓冲层;
S2在AlN缓冲层上外延GaN沟道层;
S3在GaN沟道层上外延生长AlN插入层;
S4在AlN插入层上外延生长Al组分渐变的AlGaN势垒层;
S5对S4所得的外延片进行光刻,暴露出栅极区域,进行蒸镀金属Mg、剥离、退火,栅极下方的区域形成Mg扩散的P型Al组分渐变的AlGaN层;
S6对S5所得的外延片进行光刻,暴露出源、漏金属电极区域,进行蒸镀、剥离、退火,形成漏、源金属电极;
S7对S6所得的外延片进行台面隔离;
S8对S7所得的外延片进行光刻,暴露出栅金属电极区域,通过蒸镀、剥离,形成栅金属电极;
S9在S8所得的外延片上生长SiNX钝化层;
S10在S9的基础上,经过化学腐蚀处理去除源、漏、栅金属电极区域下的SiNX钝化层,通过蒸镀、剥离,引出源、漏、栅金属电极。
9.根据权利要求8所述的方法,其特征在于,所述S4中,所述的外延生长Al组分渐变的AlGaN势垒层采用金属有机化学气相沉积进行生长制备,生长温度为850~950℃,具体为:在衬底温度为900~1000℃下,通入TMAl、TMGa与NH3在衬底表面作用,TMAl和TMGa以恒定的摩尔量变化,NH3流量为10~30sccm,通入TMAl、TMGa和NH3的时间均为40~60s,不管Al组成如何变化,保持AlGaN生长速率都是恒定的。
10.根据权利要求8所述的方法,其特征在于,所述S5中,蒸镀Mg的厚度为5-100nm,退火温度为550-650℃,退火时间为0.3~1h。
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