CN105845621A - Method of forming semiconductor device and processing method for Q-time exceeding of semiconductor device - Google Patents
Method of forming semiconductor device and processing method for Q-time exceeding of semiconductor device Download PDFInfo
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- CN105845621A CN105845621A CN201510024488.6A CN201510024488A CN105845621A CN 105845621 A CN105845621 A CN 105845621A CN 201510024488 A CN201510024488 A CN 201510024488A CN 105845621 A CN105845621 A CN 105845621A
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- semiconductor device
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- alkaline solution
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- copper metal
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Abstract
The invention discloses a method of forming a semiconductor device, comprising the following steps: providing a front-end structure, wherein the front-end structure has exposed copper metal lines, and the copper metal lines are processed through CMP (chemical Mechanical Polishing); and cleaning the front-end structure with alkaline solution to remove copper ions on the copper metal lines. The invention further discloses a processing method for Q-time exceeding of a semiconductor device. According to the method, the semiconductor device has exposed copper metal lines, and when the queue time (Q-time) after the copper metal lines are processed through CMP exceeds a preset Q-time, the semiconductor device is cleaned with alkaline solution. Through the methods of the invention, copper oxides on copper metal lines are removed, and generation of leakage current between copper metal lines is prevented.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly relate to the forming method of a kind of semiconductor device and surpass
Go out processing method during Q-time.
Background technology
Along with the fast development of semiconductor fabrication process, the size of semiconductor device is more and more less, therefore,
It is more and more difficult that leakage current between metal wire (Metal line) controls, this generally show through time
Puncture during (TDDB) detection the most defective, especially for having metal-oxide-metal (MOM)
The chip of structure, leakage current has become as a key factor of limit product performance.
In copper wiring, owing to the physicochemical property of copper is active, under current working condition, typically through copper
After cmp (Cu-CMP) technique between next website (step) waiting time (queue time,
Q-time), in, the leakage current situation between copper metal line can significantly deteriorate.
Refer to Fig. 1, copper metal line 1, after CMP, can be formed at top in the short period of time
The oxide of one layer of copper, copper ion 2 therein can dissociate the oxide layer of copper, mainly spreads to both sides, makes
Obtain and be easy to turn between adjacent copper metal line 1.
In order to reduce the leakage current between adjacent copper metal line 1, keep preferably performance, conventional method
It is to try to shorten Q-time.Although this reduces the situation that leakage current deteriorates to a certain extent, but for greatly
But there is the biggest challenge for large-scale production, often occur that some exceed the product of Q-time.For super
Go out the product of Q-time, be currently and use the method for CMP to carry out do over again (rework), but this is a kind of
The method cured the symptoms, not the disease, is faced with the nervous situation of Q-time after doing over again equally.Further, this way
Copper metal line can be made thinning, be susceptible to fracture.
Summary of the invention
It is an advantage of the invention to provide the forming method of a kind of semiconductor device, improve prior art
The situation of leakage current easily occurs between middle copper metal line.
It is a further object of the invention to provide the processing method of a kind of semiconductor device beyond Q-time,
After preventing from processing, Q-time is still nervous and the situation that copper metal line ruptures easily occurs.
For solving above-mentioned technical problem, the present invention provides the forming method of a kind of semiconductor device, including: carry
For front-end architecture, described front-end architecture has the copper metal line come out, and described copper metal line is through CMP
Process；And
Use alkaline solution to clean described front-end architecture, remove the copper ion on copper metal line.
Optionally, for the forming method of described semiconductor device, the pH scope of described alkaline solution is
7-10。
Optionally, for the forming method of described semiconductor device, described alkaline solution for include phenyl,
Fluorion and the solution of ammonium ion, the concentration of described alkaline solution is 20%-40%.
Optionally, for the forming method of described semiconductor device, described alkaline solution for include methyl,
Amino and the solution of ethyl, the concentration of described alkaline solution solution is less than or equal to 10%.
Optionally, for the forming method of described semiconductor device, alkaline solution is used to clean described front end
The time of structure is 10s-120s.
The corresponding present invention also provides for a kind of semiconductor device beyond processing method during Q-time, described partly leads
Body device has the copper metal line come out, and the described copper metal line waiting time after CMP processes surpasses
When going out to preset Q-time, alkaline solution is used to clean described semiconductor device.
Optionally, for described semiconductor device beyond processing method during Q-time, described alkaline solution
PH scope be 7-10.
Optionally, for described semiconductor device beyond processing method during Q-time, described alkaline solution
Being the solution including phenyl, fluorion and ammonium ion, the concentration of described alkaline solution is 20%-40%.
Optionally, for described semiconductor device beyond processing method during Q-time, described alkaline solution
Being the solution including methyl, amino and ethyl, the concentration of described alkaline solution is less than or equal to 10%.
Optionally, for described semiconductor device beyond processing method during Q-time, use alkaline solution
The time cleaning described semiconductor device is 10s-120s.
Compared with prior art, in the forming method of the semiconductor device that the present invention provides, by using alkalescence
Solution is carried out eliminating the oxide layer on copper metal line surface, and eliminates copper ion, it is possible to effectively
Prevention copper surface continues oxidation, thus reduces the probability that leakage current produces.Partly lead what the present invention provided
Body device is beyond in processing method during Q-time, by using alkaline solution to be carried out, it is possible to avoid copper
Lower thickness, thus effectively prevent the fracture of metal wire, improve product quality.
Accompanying drawing explanation
Fig. 1 be prior art semiconductor device in the oxidized schematic diagram of copper metal line；
Fig. 2 is the flow chart of the forming method of semiconductor device in the embodiment of the present invention；
Fig. 3 is the flow chart of the processing method in the embodiment of the present invention beyond Q-time.
Detailed description of the invention
The core concept of the present invention is, utilizes alkaline solution to go this principle of oxide on copper removal surface, eliminates
The harmful effect of copper ion, after chemomechanical copper grinding (Cu-CMP), or for semiconductor device
When part is more than Q-time, alkaline solution is used to clean semiconductor device, by the oxide removal on copper surface, energy
Enough copper surfaces of prevention effectively continue oxidation, reduce the purpose of leakage current.
The more excellent reality of processing method when being exemplified below the forming method of described semiconductor device and exceed Q-time
Execute example, to understand explanation present disclosure, it is understood that, present disclosure be not restricted to
Lower embodiment, other by the improvement of the routine techniques means of those of ordinary skill in the art also the present invention's
Within thought range.
In the forming method of described semiconductor device, it is provided that a front-end architecture, described front-end architecture is formed
Copper metal line, described copper metal line is through CMP process.As in figure 2 it is shown, this front-end architecture includes quasiconductor
Substrate 10, the dielectric layer 40 being formed on described semiconductor base 10, it is formed in described dielectric layer 40
Through hole and the copper metal line 20 being filled in described through hole.Wherein, described semiconductor device e.g. logic
Device, is formed with active area structure, corresponding buried regions and fleet plough groove isolation structure in described semiconductor base 10
(STI) the known structure such as, described dielectric layer 40 can be silicon dioxide.
Form the electroplating technology carrying out metallic copper after through hole in the dielectric layer, with in described through hole and be situated between
Form metallic copper on matter layer 40, then carry out cmp (CMP) technique, remove and be positioned at dielectric layer
On metallic copper, to form required copper metal line 20 in through-holes.In preferred version, carrying out gold
Before belonging to the electroplating technology of copper, in described through hole, first form sealing coat (barrier) 30.
Finding in practice, after CMP, the copper metal line 20 come out can be oxidized to form
The oxide 50 of copper, such as CuO, certainly it is also likely to be the oxide of other kinds of copper, is designated as CuxOy,
And the oxide 50 of these copper also can constantly increase after cmp to the time period of next website.
Copper ion 51 in the oxide 50 of copper then can dissociate to spread to both sides and make between adjacent copper metal line 20
Produce leakage current.Present inventor, through repetition test, finds to utilize alkaline solution removable copper surface
Oxide, and then eliminate the harmful effect of copper ion.
To this end, the present invention uses alkaline solution to clean described front-end architecture, to remove the copper on copper metal line 20
Ion.Concrete as it is shown on figure 3, use the mode of wet-cleaning the oxide of copper to be consumed, at copper
When oxide is removed, it is possible to the copper ion producing leakage current between adjacent copper metal line 20 is the most just disappeared
Remove.
In a preferred embodiment of the present invention, the pH of the alkaline solution of employing is 7-10, and described alkalescence is molten
Liquid is the solution including phenyl, fluorion, ammonium ion, and the concentration of this solution is 20%-40%.Such as, may be used
To use trialkylammonium hydrogen fluoride (NR3HF) solution, pH can be 8.Owing to this cleaning process is at CMP
The most just carrying out, therefore the thickness of the oxide 50 of copper will not be the thickest, is carried out described semiconductor device
Time be 10s-120s, such as can carry out the cleaning of 20s.It is understood that scavenging period should be tied
After closing actual CMP, interlude is carried out, and interval time, length then scavenging period also to extend accordingly.Even
Process conditions during CMP should also be as taking in, thus obtains the optimal clean time.
As a example by using trialkylammonium hydrogen fluoride solution to be carried out, it may occur that reaction as follows:
CuxOy+2NR3HF→CuxOy-1F2+2NR3+H2O
Therefore, after wet-cleaning, the oxide of copper is removed, also will can result in copper metal line 20 it
Between produce leakage current copper ion eliminate.The fluoride of the copper formed is then as passivation layer 60.This passivation layer
60 can be good at stoping copper metal line 20 to continue oxidation, therefore, effectively prevent the formation of leakage current,
It also is able to extend Q-time.
In another preferred embodiment of the present invention, described alkaline solution can also for include methyl, amino,
The solution of ethyl, the concentration of this solution is less than or equal to 10%, it is also preferred that the left this pH value of solution is 9-10.
Show through actual experiment, use the semiconductor device that the method for the present invention obtains, its breakdown voltage
(Vbd) test and appraisal are obviously improved, as shown in table 1 below.Wherein, serial number W6, W9, W12,
The wafer of W15, W21 and W24 uses alkaline solution to be carried out, and the wafer of serial number W18 is then
Employing prior art is formed.Accumulative inefficacy function (accumulative at all test points of each wafer
Distribution function, CDF) be respectively 63.20%, 50% and 0.10% time, statistic Vbd is bright
Aobvious more than this wafer of W18 without wet-cleaning.This table is illustrated: such as W6 wafer,
CDF is 0.1%, then it represents that have the probability of 0.1% to make breakdown voltage be less than 62V.And wafer W18's
Test and appraisal slope (slope) are also significantly less than other wafers, and this all shows to be provided without at the method for the present invention
The wafer W18 of reason is easier to breakdown, namely other wafers that employing alkaline solution is carried out are at copper metal
Leakage current between line has obtained good control.
Table 1
The present invention also provide for a kind of semiconductor device beyond Q-time time processing method, the method includes: right
Semiconductor device beyond Q-time uses alkaline solution to be carried out.
Please continue to refer to Fig. 2-3, in view of time after copper CMP beyond Q-time be also on copper metal line 20 square
Becoming the oxide layer 50 of copper, therefore, the cleaning that semiconductor device is carried out by this method when being formed is essentially identical.
Can process according to the method that the oxide layer processing copper in the forming method of above-mentioned semiconductor device is identical.
Certainly, the thickness producing oxide layer 50 according to reality is different, can be to scavenging period, solution concentration and pH
Carry out suitable adjustment.
After over cleaning, one layer of passivation layer 60 can be formed equally, prevent from continuing oxidized, and will not be to copper
Metal wire 20 damages.Use CMP to the semiconductor device more than Q-time in compared to existing technology
Part processes, additionally it is possible to ensure that the thickness of copper metal line 20, prevents copper metal line 20 to rupture
Situation.
Obviously, those skilled in the art can carry out various change and modification without deviating from this to the present invention
Bright spirit and scope.So, if the present invention these amendment and modification belong to the claims in the present invention and
Within the scope of its equivalent technologies, then the present invention is also intended to comprise these change and modification.
Claims (10)
1. a forming method for semiconductor device, including:
Thering is provided front-end architecture, described front-end architecture has the copper metal line come out, described copper metal line warp
Cross CMP process；And
Use alkaline solution to clean described front-end architecture, remove the copper ion on copper metal line.
2. the forming method of semiconductor device as claimed in claim 1, it is characterised in that described alkalescence is molten
The pH scope of liquid is 7-10.
3. the forming method of semiconductor device as claimed in claim 2, it is characterised in that described alkalescence is molten
Liquid is the solution including phenyl, fluorion and ammonium ion, and the concentration of described alkaline solution is 20%-40%.
4. the forming method of semiconductor device as claimed in claim 2, it is characterised in that described alkalescence is molten
Liquid is the solution including methyl, amino and ethyl, and the concentration of described alkaline solution solution is less than or equal to 10%.
5. the forming method of the semiconductor device as described in claim 3 or 4, it is characterised in that use alkali
Property solution clean described front-end architecture time be 10s-120s.
6. a semiconductor device is beyond processing method during Q-time, it is characterised in that described semiconductor device
Part has the copper metal line come out, and the described copper metal line waiting time after CMP processes is beyond one
When presetting Q-time, alkaline solution is used to clean described semiconductor device.
7. semiconductor device as claimed in claim 6 is beyond processing method during Q-time, it is characterised in that
The pH scope of described alkaline solution is 7-10.
8. semiconductor device as claimed in claim 7 is beyond processing method during Q-time, it is characterised in that
Described alkaline solution is the solution including phenyl, fluorion and ammonium ion, and the concentration of described alkaline solution is
20%-40%.
9. semiconductor device as claimed in claim 7 is beyond processing method during Q-time, it is characterised in that
Described alkaline solution is the solution including methyl, amino and ethyl, and the concentration of described alkaline solution is for being less than
In 10%.
10. semiconductor device is beyond processing method during Q-time as claimed in claim 8 or 9, and it is special
Levying and be, the time using alkaline solution to clean described semiconductor device is 10s-120s.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510024488.6A CN105845621B (en) | 2015-01-17 | 2015-01-17 | The forming method of semiconductor devices and processing method when beyond Q-time |
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|---|---|---|---|
| CN201510024488.6A CN105845621B (en) | 2015-01-17 | 2015-01-17 | The forming method of semiconductor devices and processing method when beyond Q-time |
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| CN105845621A true CN105845621A (en) | 2016-08-10 |
| CN105845621B CN105845621B (en) | 2019-07-02 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070225186A1 (en) * | 2006-03-27 | 2007-09-27 | Matthew Fisher | Alkaline solutions for post CMP cleaning processes |
| CN102005363A (en) * | 2009-09-01 | 2011-04-06 | 中芯国际集成电路制造(上海)有限公司 | Method for prolonging queue time |
| CN102044474A (en) * | 2009-10-13 | 2011-05-04 | 中芯国际集成电路制造(上海)有限公司 | Surface treatment method of copper metal layer subjected to chemically mechanical polishing |
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2015
- 2015-01-17 CN CN201510024488.6A patent/CN105845621B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070225186A1 (en) * | 2006-03-27 | 2007-09-27 | Matthew Fisher | Alkaline solutions for post CMP cleaning processes |
| CN102005363A (en) * | 2009-09-01 | 2011-04-06 | 中芯国际集成电路制造(上海)有限公司 | Method for prolonging queue time |
| CN102044474A (en) * | 2009-10-13 | 2011-05-04 | 中芯国际集成电路制造(上海)有限公司 | Surface treatment method of copper metal layer subjected to chemically mechanical polishing |
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