CN105845621B - The forming method of semiconductor devices and processing method when beyond Q-time - Google Patents
The forming method of semiconductor devices and processing method when beyond Q-time Download PDFInfo
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- CN105845621B CN105845621B CN201510024488.6A CN201510024488A CN105845621B CN 105845621 B CN105845621 B CN 105845621B CN 201510024488 A CN201510024488 A CN 201510024488A CN 105845621 B CN105845621 B CN 105845621B
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Abstract
Present invention discloses a kind of forming methods of semiconductor devices.This method comprises: providing front-end architecture, the front-end architecture has the copper metal line being exposed, and the copper metal line is handled by CMP；And the front-end architecture is cleaned using alkaline solution, remove the copper ion on copper metal line.The invention also provides a kind of processing methods for exceeding Q-time to the semiconductor devices.This method comprises: the semiconductor devices has the copper metal line that is exposed, the copper metal line by CMP treated the waiting time exceeds a default Q-time when, the semiconductor devices is cleaned using alkaline solution.Method of the invention eliminates the oxide of the copper on copper metal line, prevents and generates leakage current between copper metal line.
Description
Technical field
The present invention relates to technical field of semiconductors, a kind of forming method more particularly to semiconductor devices and exceed Q-
Processing method when time.
Background technique
With the fast development of semiconductor fabrication process, the size of semiconductor devices is also smaller and smaller, therefore, metal wire
Electric leakage flow control between (Metal line) is also more and more difficult therewith, when this usually shows time breakdown (TDDB) detection
Often unqualified, especially for the chip with metal-oxide-metal (MOM) structure, leakage current has become restriction and produces
One key factor of moral character energy.
In copper wiring, since the physicochemical property of copper is active, under current working condition, generally pass through copper chemical mechanical
After grinding (Cu-CMP) technique into the waiting time (queue time, Q-time) between next website (step), copper metal
Leakage current situation between line can significantly deteriorate.
Referring to FIG. 1, copper metal line 1 after CMP process, can form the oxygen of one layer of copper at top in a relatively short period of time
Compound, copper ion 2 therein can dissociate the oxide layer of copper, mainly spread to two sides, so that holding between adjacent copper metal line 1
Easily conducting.
In order to reduce the leakage current between adjacent copper metal line 1, preferable performance is kept, common method is to try to contract
Short Q-time.Although this reduces the situation of leakage current deterioration to a certain extent, have for large-scale production
Very big challenge often will appear some products beyond Q-time.It is currently using CMP for exceeding the product of Q-time
Method come done over again (rework), but this is a kind of palliative method, and Q-time is equally faced with after doing over again
Nervous situation.Also, this way can make copper metal line thinning, be easy to happen fracture.
Summary of the invention
It is an advantage of the invention to provide a kind of forming method of semiconductor devices, improve copper gold in the prior art
Belong to the case where being easy to appear leakage current between line.
It is a further object of the invention to provide a kind of processing methods of semiconductor devices beyond Q-time, prevent
The case where Q-time is still nervous after processing and is easy to appear copper metal line fracture.
In order to solve the above technical problems, the present invention provides a kind of forming method of semiconductor devices, comprising: provide front end knot
Structure, the front-end architecture have the copper metal line being exposed, and the copper metal line is handled by CMP；And
The front-end architecture is cleaned using alkaline solution, removes the copper ion on copper metal line.
Optionally, for the forming method of the semiconductor devices, the pH range of the alkaline solution is 7-10.
Optionally, for the forming method of the semiconductor devices, the alkaline solution be include phenyl, fluorine ion and
The solution of ammonium ion, the concentration of the alkaline solution are 20%-40%.
Optionally, for the forming method of the semiconductor devices, the alkaline solution be include methyl, amino and second
The concentration of the solution of base, the alkaline solution solution is less than or equal to 10%.
Optionally, for the forming method of the semiconductor devices, the front-end architecture is cleaned using alkaline solution
Time is 10s-120s.
Exceed processing method when Q-time, the semiconductor devices the present invention also provides a kind of semiconductor devices accordingly
With the copper metal line being exposed, when the copper metal line exceeds a default Q-time by CMP treated waiting time,
The semiconductor devices is cleaned using alkaline solution.
Optionally, processing method when Q-time, the pH model of the alkaline solution are exceeded for the semiconductor devices
Enclosing is 7-10.
Optionally, processing method when Q-time is exceeded for the semiconductor devices, the alkaline solution is to include
The solution of phenyl, fluorine ion and ammonium ion, the concentration of the alkaline solution are 20%-40%.
Optionally, processing method when Q-time is exceeded for the semiconductor devices, the alkaline solution is to include
The solution of methyl, amino and ethyl, the concentration of the alkaline solution are less than or equal to 10%.
Optionally, processing method when Q-time is exceeded for the semiconductor devices, institute is cleaned using alkaline solution
The time for stating semiconductor devices is 10s-120s.
Compared with prior art, in the forming method of semiconductor devices provided by the invention, by using alkaline solution into
Row cleaning eliminates the oxide layer on copper metal line surface, and eliminates copper ion, can effectively prevent copper surface and continue
Oxidation, to reduce the probability of leakage current generation.Processing side when semiconductor devices provided by the invention exceeds Q-time
In method, being cleaned by using alkaline solution, the thickness that can be avoided copper is thinning, so that it is effectively prevent the fracture of metal wire,
Improve product quality.
Detailed description of the invention
Fig. 1 is the schematic diagram that copper metal line is oxidized in the semiconductor devices of the prior art；
Fig. 2 is the flow chart of the forming method of semiconductor devices in the embodiment of the present invention；
Fig. 3 is the flow chart of the processing method in the embodiment of the present invention beyond Q-time.
Specific embodiment
Core of the invention thought is to go this principle of the oxide on copper removal surface using alkaline solution, eliminate copper ion
Adverse effect used after chemomechanical copper grinding (Cu-CMP), or when being more than Q-time for semiconductor devices
The oxide removal on copper surface can effectively be prevented copper surface and continue to aoxidize, reached by alkaline solution cleaning semiconductor devices
To the purpose for reducing leakage current.
It is exemplified below the forming method of the semiconductor devices and the preferred embodiment of processing method when beyond Q-time,
Clearly to illustrate the contents of the present invention, it is understood that, the contents of the present invention are not restricted to following embodiment, other pass through
The improvement of the conventional technical means of those of ordinary skill in the art is also within thought range of the invention.
In the forming method of the semiconductor devices, a front-end architecture is provided, the front-end architecture is formed with copper metal
Line, the copper metal line are handled by CMP.As shown in Fig. 2, the front-end architecture includes semiconductor base 10, is formed in described half
Dielectric layer 40 in conductor substrate 10, the copper metal of the through-hole being formed in the dielectric layer 40 and filling in the through hole
Line 20.Wherein, the semiconductor devices is, for example, logical device, is formed with active area structure, phase in the semiconductor base 10
Structure well known to buried layer and fleet plough groove isolation structure (STI) etc. is answered, the dielectric layer 40 can be silica.
It is formed after through-hole in the dielectric layer and carries out the electroplating technology of metallic copper, in the through hole and dielectric layer 40
Then upper formation metallic copper carries out chemical mechanical grinding (CMP) technique, removal is located at the metallic copper on dielectric layer, logical
Copper metal line 20 required for being formed in hole.In preferred version, before the electroplating technology for carrying out metallic copper, first in the through-hole
Middle formation separation layer (barrier) 30.
It is found in practice, the oxide of copper can be oxidized to form in the copper metal line 20 after CMP process, being exposed
50, such as CuO, certainly it is also likely to be the oxide of other kinds of copper, is denoted as CuxOy, and the oxide 50 of these copper can also
Extremely constantly increase in the period of next website after cmp.Copper ion 51 in the oxide 50 of copper can then dissociate out
It spreads to two sides so that generating leakage current between adjacent copper metal line 20.Present inventor passes through repetition test, and discovery utilizes
Alkaline solution can remove the oxide on copper surface, and then eliminate the adverse effect of copper ion.
For this purpose, the present invention cleans the front-end architecture using alkaline solution, to remove the copper ion on copper metal line 20.Tool
Body, can when the oxide of copper is removed as shown in figure 3, consumed by the way of wet-cleaning to the oxide of copper
So that the copper ion for generating leakage current between adjacent copper metal line 20 is also just eliminated.
In a preferred embodiment of the present invention, for the pH of the alkaline solution used for 7-10, the alkaline solution is packet
The solution of phenyl, fluorine ion, ammonium ion is included, the concentration of the solution is 20%-40%.For example, trialkylammonium hydrogen fluoride can be used
(NR3HF) solution, pH can be 8.Since the cleaning process is the thickness of the oxide 50 of copper after cmp with regard to carrying out
Will not be very thick, the time cleaned to the semiconductor devices is 10s-120s, such as can carry out the cleaning of 20s.It can be with
Understand, scavenging period should be carried out in conjunction with interval time after practical CMP, and interval time, long then scavenging period also wanted phase
It should extend.Process conditions when even CMP should also be as taking in, to obtain the optimal clean time.
For being cleaned using trialkylammonium hydrogen fluoride solution, it may occur that following reaction:
CuxOy+2NR3HF→CuxOy-1F2+2NR3+H2O
Therefore, after wet-cleaning, the oxide of copper is removed, and will also cause to generate leakage between copper metal line 20
The copper ion of electric current is eliminated.The fluoride of the copper of formation is then as passivation layer 60.The passivation layer 60 can be good at preventing copper
Metal wire 20 continues to aoxidize, and therefore, effectively prevents the formation of leakage current, can also extend Q-time.
In another preferred embodiment of the invention, the alkaline solution can also be include methyl, amino, ethyl
Solution, the concentration of the solution are less than or equal to 10%, preferably, the pH value of solution is 9-10.
Show the semiconductor devices obtained using method of the invention, breakdown voltage (Vbd) assessment by actual experiment
It is obviously improved, as shown in table 1 below.Wherein, the wafer of serial number W6, W9, W12, W15, W21 and W24 is molten using alkalinity
Liquid is cleaned, and the wafer of serial number W18 is formed using the prior art.In the accumulative mistake of all test points of each wafer
When effect function (accumulative distribution function, CDF) is respectively 63.20%, 50% and 0.10%, system
Count value Vbd is significantly greater than this wafer of the W18 without wet-cleaning.The table is illustrated: such as W6 wafer, CDF
It is 0.1%, then it represents that have 0.1% probability that breakdown voltage is made to be less than 62V.And the assessment slope (slope) of wafer W18
It is significantly less than other wafers, this all shows that the wafer W18 not handled using method of the invention is more easily breakdown, namely
Leakage current of other wafers cleaned using alkaline solution between copper metal line has obtained good control.
Table 1
Exceed processing method when Q-time the present invention also provides a kind of semiconductor devices, this method comprises: to Q- is exceeded
The semiconductor devices of time is cleaned using alkaline solution.
Please continue to refer to Fig. 2-3, in view of the oxidation for when exceeding Q-time after copper CMP being also formation copper above copper metal line 20
Layer 50, therefore, the cleaning that this method carries out semiconductor devices when being formed are essentially identical.It can be according to above-mentioned semiconductor device
Forming method in handle copper the identical method of oxide layer handled.Certainly, according to the practical thickness for generating oxide layer 50
Difference can carry out adjustment appropriate to scavenging period, solution concentration and pH.
After over cleaning, one layer of passivation layer 60 equally will form, prevent from continuing to be oxidized, and will not be to copper metal line 20
It damages.The semiconductor devices for being more than Q-time is handled using CMP process compared to the prior art, additionally it is possible to guarantee
The thickness of copper metal line 20, to prevent copper metal line 20 there is a situation where be broken.
Obviously, various changes and modifications can be made to the invention without departing from essence of the invention by those skilled in the art
Mind and range.In this way, if these modifications and changes of the present invention belongs to the range of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to include these modifications and variations.
Claims (8)
1. a kind of forming method of semiconductor devices, comprising:
Front-end architecture is provided, the front-end architecture has the copper metal line being exposed, and the copper metal line is handled by CMP；
And
The front-end architecture is cleaned using alkaline solution, removes the copper ion on copper metal line, the alkaline solution be include benzene
The solution of base, fluorine ion and ammonium ion, the alkaline solution on the copper metal line copper ion and Cu oxide react, and
The fluoride of copper is generated as the passivation layer for protecting the copper metal line surface.
2. the forming method of semiconductor devices as described in claim 1, which is characterized in that the pH range of the alkaline solution is
7-10。
3. the forming method of semiconductor devices as claimed in claim 2, which is characterized in that the concentration of the alkaline solution is
20%-40%.
4. the forming method of semiconductor devices as claimed in claim 3, which is characterized in that before using alkaline solution cleaning described
The time of end structure is 10s-120s.
5. a kind of semiconductor devices exceeds processing method when Q-time, which is characterized in that the semiconductor devices has exposure
Copper metal line out, when the copper metal line exceeds a default Q-time by CMP treated waiting time, using alkalinity
Solution cleans the semiconductor devices, and the alkaline solution is the solution for including phenyl, fluorine ion and ammonium ion, and the alkalinity is molten
Liquid on the copper metal line copper ion and Cu oxide react, and generate the fluoride of copper as protecting the copper metal line
The passivation layer on surface.
6. semiconductor devices as claimed in claim 5 exceeds processing method when Q-time, which is characterized in that the alkalinity is molten
The pH range of liquid is 7-10.
7. semiconductor devices as claimed in claim 6 exceeds processing method when Q-time, which is characterized in that the alkalinity is molten
The concentration of liquid is 20%-40%.
8. semiconductor devices as claimed in claim 7 exceeds processing method when Q-time, which is characterized in that molten using alkalinity
The time that liquid cleans the semiconductor devices is 10s-120s.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510024488.6A CN105845621B (en) | 2015-01-17 | 2015-01-17 | The forming method of semiconductor devices and processing method when beyond Q-time |
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| CN201510024488.6A CN105845621B (en) | 2015-01-17 | 2015-01-17 | The forming method of semiconductor devices and processing method when beyond Q-time |
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| CN105845621B true CN105845621B (en) | 2019-07-02 |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102005363A (en) * | 2009-09-01 | 2011-04-06 | 中芯国际集成电路制造(上海)有限公司 | Method for prolonging queue time |
| CN102044474A (en) * | 2009-10-13 | 2011-05-04 | 中芯国际集成电路制造(上海)有限公司 | Surface treatment method of copper metal layer subjected to chemically mechanical polishing |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070225186A1 (en) * | 2006-03-27 | 2007-09-27 | Matthew Fisher | Alkaline solutions for post CMP cleaning processes |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102005363A (en) * | 2009-09-01 | 2011-04-06 | 中芯国际集成电路制造(上海)有限公司 | Method for prolonging queue time |
| CN102044474A (en) * | 2009-10-13 | 2011-05-04 | 中芯国际集成电路制造(上海)有限公司 | Surface treatment method of copper metal layer subjected to chemically mechanical polishing |
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