CN105826443B - 发光器件和照明系统 - Google Patents
发光器件和照明系统 Download PDFInfo
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- CN105826443B CN105826443B CN201510006933.6A CN201510006933A CN105826443B CN 105826443 B CN105826443 B CN 105826443B CN 201510006933 A CN201510006933 A CN 201510006933A CN 105826443 B CN105826443 B CN 105826443B
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- branch electrodes
- electrode
- luminescent device
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- 239000004065 semiconductor Substances 0.000 claims abstract description 93
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 229910052759 nickel Inorganic materials 0.000 claims description 9
- 229910052735 hafnium Inorganic materials 0.000 claims description 6
- 229910052763 palladium Inorganic materials 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 229910052725 zinc Inorganic materials 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910052789 astatine Inorganic materials 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 9
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 12
- 230000005611 electricity Effects 0.000 description 12
- 239000000463 material Substances 0.000 description 9
- 238000000605 extraction Methods 0.000 description 7
- 150000004767 nitrides Chemical class 0.000 description 7
- 239000011787 zinc oxide Substances 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 229910052741 iridium Inorganic materials 0.000 description 5
- 229910052703 rhodium Inorganic materials 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- 229910002704 AlGaN Inorganic materials 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- VRIVJOXICYMTAG-IYEMJOQQSA-L iron(ii) gluconate Chemical compound [Fe+2].OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O.OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O VRIVJOXICYMTAG-IYEMJOQQSA-L 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910019897 RuOx Inorganic materials 0.000 description 2
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000003760 hair shine Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- SKRWFPLZQAAQSU-UHFFFAOYSA-N stibanylidynetin;hydrate Chemical compound O.[Sn].[Sb] SKRWFPLZQAAQSU-UHFFFAOYSA-N 0.000 description 2
- 229910018229 Al—Ga Inorganic materials 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 241001062009 Indigofera Species 0.000 description 1
- WGCXSIWGFOQDEG-UHFFFAOYSA-N [Zn].[Sn].[In] Chemical compound [Zn].[Sn].[In] WGCXSIWGFOQDEG-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 description 1
- 239000010437 gem Substances 0.000 description 1
- 229910001751 gemstone Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N nickel(II) oxide Inorganic materials [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/387—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020140101488A KR20160017905A (ko) | 2014-08-07 | 2014-08-07 | 발광소자 및 조명시스템 |
| KR10-2014-0101488 | 2014-08-07 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105826443A CN105826443A (zh) | 2016-08-03 |
| CN105826443B true CN105826443B (zh) | 2019-04-05 |
Family
ID=53540677
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510006933.6A Active CN105826443B (zh) | 2014-08-07 | 2015-01-07 | 发光器件和照明系统 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9634192B2 (es) |
| EP (1) | EP2983216B1 (es) |
| JP (1) | JP6714328B2 (es) |
| KR (1) | KR20160017905A (es) |
| CN (1) | CN105826443B (es) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9905729B2 (en) | 2015-03-27 | 2018-02-27 | Seoul Viosys Co., Ltd. | Light emitting diode |
| TWD180530S (zh) * | 2016-05-09 | 2017-01-01 | 晶元光電股份有限公司 | 發光二極體陣列之部分 |
| JP2018006535A (ja) * | 2016-06-30 | 2018-01-11 | ウシオ電機株式会社 | 半導体発光素子 |
| WO2018106030A1 (ko) | 2016-12-06 | 2018-06-14 | 엘지이노텍 주식회사 | 발광소자 |
| KR20180073866A (ko) * | 2016-12-23 | 2018-07-03 | 엘지이노텍 주식회사 | 반도체 소자 |
| KR102410809B1 (ko) * | 2017-08-25 | 2022-06-20 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 반도체 소자 |
| US10937928B2 (en) | 2017-11-09 | 2021-03-02 | Asahi Kasei Kabushiki Kaisha | Nitride semiconductor element, nitride semiconductor light emitting element, ultraviolet light emitting element |
| USD894850S1 (en) * | 2018-12-12 | 2020-09-01 | Epistar Corporation | Light-emitting device |
| WO2020141861A1 (ko) | 2018-12-31 | 2020-07-09 | 주식회사 나노엑스 | 양면 발광 led 칩 |
| CN110021691B (zh) * | 2019-04-03 | 2020-05-01 | 厦门市三安光电科技有限公司 | 一种半导体发光器件 |
| KR102442664B1 (ko) * | 2021-01-27 | 2022-09-13 | 주식회사 어드밴스트뷰테크널러지 | 마이크로 led 소자, 이의 제조 방법 및 이를 이용한 디스플레이 장치 |
| JP2024526142A (ja) * | 2021-12-21 | 2024-07-17 | 聯嘉光電股▲ふん▼有限公司 | 発光効率の高い小サイズの垂直型発光ダイオードチップ |
| US12062746B2 (en) * | 2022-01-18 | 2024-08-13 | Excellence Opto. Inc. | Small-sized vertical light emitting diode chip with high energy efficiency |
| US20230261140A1 (en) * | 2022-02-15 | 2023-08-17 | Excellence Opto. Inc. | Small-size vertical-type light emitting diode chip with high luminous in central region |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102005465A (zh) * | 2009-08-31 | 2011-04-06 | Lg伊诺特有限公司 | 发光器件以及具有该发光器件的发光器件封装 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6693306B2 (en) | 2002-07-22 | 2004-02-17 | United Epitaxy Company, Ltd. | Structure of a light emitting diode and method of making the same |
| JP4882792B2 (ja) * | 2007-02-25 | 2012-02-22 | 日亜化学工業株式会社 | 半導体発光素子 |
| JP5040355B2 (ja) * | 2007-02-24 | 2012-10-03 | 日亜化学工業株式会社 | 半導体発光素子及びこれを備えた発光装置 |
| JP5223102B2 (ja) * | 2007-08-08 | 2013-06-26 | 豊田合成株式会社 | フリップチップ型発光素子 |
| KR101428053B1 (ko) | 2007-12-13 | 2014-08-08 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
| JP2010232649A (ja) | 2009-03-06 | 2010-10-14 | Showa Denko Kk | Ｉｉｉ族窒化物半導体発光素子及びその製造方法、並びにランプ |
| JP5793292B2 (ja) * | 2010-02-17 | 2015-10-14 | 豊田合成株式会社 | 半導体発光素子 |
| US8664684B2 (en) * | 2010-08-31 | 2014-03-04 | Micron Technology, Inc. | Solid state lighting devices with improved contacts and associated methods of manufacturing |
| DE112011103819T5 (de) * | 2010-11-18 | 2013-08-22 | Seoul Opto Device Co., Ltd. | Lichtemittierender Diodenchip mit Elektrodenfeld |
| US8564010B2 (en) | 2011-08-04 | 2013-10-22 | Toshiba Techno Center Inc. | Distributed current blocking structures for light emitting diodes |
| KR101364721B1 (ko) | 2012-03-09 | 2014-02-20 | 서울바이오시스 주식회사 | 전극 패드를 갖는 발광 다이오드 칩 |
| WO2013169032A1 (ko) * | 2012-05-09 | 2013-11-14 | 서울옵토디바이스주식회사 | 광추출 효율이 향상된 발광다이오드들 |
| KR101946917B1 (ko) * | 2012-06-08 | 2019-02-12 | 엘지이노텍 주식회사 | 발광소자 제조방법 |
| KR101405449B1 (ko) | 2012-09-12 | 2014-06-11 | 주식회사 세미콘라이트 | 반도체 발광소자 |
| JP5900284B2 (ja) * | 2012-10-25 | 2016-04-06 | 豊田合成株式会社 | 半導体発光素子および発光装置 |
| KR20140062945A (ko) | 2012-11-15 | 2014-05-27 | 엘지이노텍 주식회사 | 발광소자 |
-
2014
- 2014-08-07 KR KR1020140101488A patent/KR20160017905A/ko not_active Application Discontinuation
-
2015
- 2015-01-07 CN CN201510006933.6A patent/CN105826443B/zh active Active
- 2015-03-18 US US14/661,115 patent/US9634192B2/en active Active
- 2015-06-05 JP JP2015114762A patent/JP6714328B2/ja active Active
- 2015-07-08 EP EP15175955.2A patent/EP2983216B1/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102005465A (zh) * | 2009-08-31 | 2011-04-06 | Lg伊诺特有限公司 | 发光器件以及具有该发光器件的发光器件封装 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20160043280A1 (en) | 2016-02-11 |
| EP2983216B1 (en) | 2019-05-08 |
| CN105826443A (zh) | 2016-08-03 |
| EP2983216A1 (en) | 2016-02-10 |
| US9634192B2 (en) | 2017-04-25 |
| KR20160017905A (ko) | 2016-02-17 |
| JP2016039365A (ja) | 2016-03-22 |
| JP6714328B2 (ja) | 2020-06-24 |
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| TR01 | Transfer of patent right |
Effective date of registration: 20210831 Address after: 168 Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province Patentee after: Suzhou Leyu Semiconductor Co.,Ltd. Address before: Seoul, South Kerean Patentee before: LG INNOTEK Co.,Ltd. |