CN105826226A - Batch heating and cooling chamber or load locking device - Google Patents
Batch heating and cooling chamber or load locking device Download PDFInfo
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- CN105826226A CN105826226A CN201610039843.1A CN201610039843A CN105826226A CN 105826226 A CN105826226 A CN 105826226A CN 201610039843 A CN201610039843 A CN 201610039843A CN 105826226 A CN105826226 A CN 105826226A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67333—Trays for chips
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/6732—Vertical carrier comprising wall type elements whereby the substrates are horizontally supported, e.g. comprising sidewalls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
Abstract
The invention discloses wafers and use methods that provide heating and cooling to a plurality of wafers to decrease time between wafer switching in a processing chamber. Wafers are supported on a lift device which can move all wafers together or on independent lift rods which can move individual wafers for heating and cooling.
Description
Technical field
Embodiment of the disclosure the device relating generally to process substrate.More specifically, it relates to be used for heating and cooling down wafer to carry out the apparatus and method of batch processing.
Background technology
The technique forming semiconductor device generally performs in the processing substrate platform comprise multiple chamber.In some instances, the purposes of multi-cavity cell-type processing platform or cluster tool is: substrate sequentially performs in controlled environment two or more technique.But, in other instances, multi-cavity cell-type processing platform only can perform single process step to substrate；Additional chamber is intended to make the speed of platform processes substrate to maximize.In the case of the latter, the technique performing substrate is typically batch processing, wherein, processes the substrate of relatively large amount (such as, 25 or 50) in given chamber simultaneously.Batch processing is that it is particularly advantageous that such as it is particularly advantageous for depositing (CVD) technique for ALD technique and some chemical gaseous phase for that perform single substrate in economically feasible mode, the most time-consuming technique.
ALD platform has the application needing framework flexibly widely, and these application have various requirement and constraint.Platform Requirements includes that wafer preheats, cools down afterwards, preheats and cooling afterwards, the volume of production from 30wph (brilliant tablets h) to 270wph, fine vacuum load lock apparatus (loadlock), and other specifications many are for providing function to be probably challenge with low Cost of right.
ALD batch processing platform provides standard, the active load lock apparatus that can cool down wafer.High-temperature technology (＞ 450 DEG C) has benefited from the wafer before placing the wafer on processing chamber pedestal and preheats.At present, in processing chamber, room temperature wafer is preheated up to 3 minutes.Which costs the process time of preciousness, and system throughput is significantly reduced for shorter technique.
Current ALD processor has many methods to heat in load lock apparatus and to cool down single wafer.But, ALD batch processing platform can process has six or the batch of more wafer.Single wafer load-lock is circulated throughout slowly (36 seconds) and cannot meet the exchange budget of 15 seconds.Therefore, there is a need in the art for for preheating the wafer with rear cooling batch to carry out the apparatus and method of batch processing.
Summary of the invention
One or more embodiments of the disclosure relate to wafer case, and described wafer case includes the wall supporting multiple cold drawing.Described wall allows to access the front side of at least some cold drawing in described cold drawing.Multiple LED position against the dorsal part of described cold drawing, and have the front side spaced apart with the front side of adjacent cold drawing to form gap.Multiple LED are directed to the front side of adjacent cold drawing.Wafer lift device is positioned to support the periphery of wafer.
The additional embodiment of the disclosure relates to wafer case, and described wafer case includes the wall supporting multiple cold drawing.Described wall allows accessing of the front side at least some cold drawing in described cold drawing so that wafer can position adjacent to the front side of described cold drawing.The dorsal part of reflector at least some cold drawing in described cold drawing.By at least one thermal boundary, the dorsal part of reflector with described cold drawing is separated.Heater is adjacent to the dorsal part of described reflector.By at least one thermal boundary, the dorsal part of heater with reflector is separated so that between the dorsal part of heater with the front side of adjacent cold drawing, there is gap.Within multiple elevating levers are positioned at cold drawing.
The further embodiment of the disclosure relates to wafer case, and wafer case includes the wall supporting multiple cold drawing.Wall allows accessing of the front side at least some cold drawing in described cold drawing so that wafer can position adjacent to the front side of described cold drawing.Heater is positioned on the dorsal part of cold drawing so that the dorsal part of heater is spaced apart with the front side of adjacent cold drawing to form gap.Isolator is between heater and cold drawing.
Accompanying drawing explanation
Therefore, in order to the mode of the features described above structure of the disclosure can be understood in detail, it is referred to embodiment and carries out the more particular description to the disclosure above summarized, some in embodiment shown in the drawings.It should be noted, however, that accompanying drawing only illustrates the exemplary embodiments of the disclosure, and therefore it is not construed as the restriction of scope of this disclosure, because the disclosure can allow the embodiment of other equivalences.
Fig. 1 is the cross-sectional view of the wafer case of the one or more embodiments according to the disclosure；
Fig. 2 is the cross-sectional view of the wafer case of the one or more embodiments according to the disclosure；
Fig. 3 is the cross-sectional view of the wafer case of the one or more embodiments according to the disclosure；
Fig. 4 is the cross-sectional view of the wafer case of the one or more embodiments according to the disclosure；
Fig. 5 is the cross-sectional view of the wafer case of the one or more embodiments according to the disclosure；
Fig. 6 is the axonometric chart of the wafer case of the one or more embodiments according to the disclosure；And
Fig. 7 illustrate according to one or more embodiments of the invention, for heating and cool down the schematic diagram of system of wafer case.
Detailed description of the invention
Embodiment of the disclosure the apparatus and method relating to preheat and/or cool down afterwards the wafer of batch.As used herein and in the appended claims, term " wafer ", " substrate " etc. it are interchangeably used.In certain embodiments, wafer is rigidity, discrete substrate, such as, 200mm or 300mm silicon wafer.
The device provided for preheating the wafer with rear cooling batch is provided.Although the most embodiments in described embodiment relate to the load lock apparatus of every batch of six wafers, it will be appreciated by those skilled in the art that the number of wafers of a collection of middle carrying can be more than or less than six.Embodiment of the disclosure to provide and can preheat during load lock apparatus empties and the device of rear cooling during load lock apparatus drains into atmospheric pressure.This allows parallel process and the limited impact of the volume of production on system.Embodiment the most easily can be reequiped for the existing system in this area.These configurations are discussed in the context that the load-lock for ALD designs, but these configurations are applicable to the heating of any batch and/or cooling application.Due to stacking, temperature ramp rate, maximum temperature and the component costs of heating element heater, batch heating remains challenge.
An aspect of this disclosure utilizes the LED heating with the cold pedestal of dual-use function.LED heating technique is that the ultrathin type lamp that can easily be stacked into box configuration adds heat-seal.LED heating technique is efficient, can immediately close, and has few thermal mass, so that LED compares traditional resistive heater and can relatively quickly cool down.
LED heater can benefit from active cooling, the 40% of the removable energy being converted into heat by LED of described active cooling.In certain embodiments, LED and circuit are the assemblies at the back side being directly assembled to metal basal board, and described metal basal board has for playing heat exchange action to remove the passage of the cooling water of the heat of excess.The opposite side of heat exchanger is water cooling surface when lamp is closed, and comprises tradition cooling board mount formula (standoff) protrusion pattern and feature.
Fig. 1 illustrates the first aspect of the disclosure incorporating LED and cooling.Embodiment of the disclosure and can be merged in wafer case, or be retrofitted in load lock apparatus.Fig. 1 illustrates the box 100 with four wafers 110.This only represents a kind of possible configuration, and is not construed as limiting the scope of the present disclosure.Some embodiments can support two, three, four, five, six, seven, eight, nine or more wafer.
Box 100 has at least one wall 105.In the embodiment in figure 1, box 100 has two walls 105.Some embodiments have more than two wall.Wall 105 supports multiple cold drawing 130, and each cold drawing 130 has front side 132 and dorsal part 131.Cold drawing 130 may be connected directly to wall 105 (as shown in fig. 1), or can be positioned on keeper.Wall 105 allows the front side of cold drawing 130 accesses (access).As used in this respect, it is allowed to access and mean that there is enough spaces positions adjacent to the front side 132 of cold drawing 130 for wafer.
Multiple LED 120 are located so that the dorsal part 121 of LED 120 contacts with the dorsal part 131 of cold drawing 130.The front side 122 of LED 120 is the most spaced apart with the front side 132 of adjacent cold drawing 130, to form gap 125 between.As used in this respect, term " adjacent cold drawing " mean the cold drawing except contacting with LED in addition to cold drawing.Multiple LED 120 are positioned to direct the light to the front side 132 of adjacent cold drawing 130 so that if wafer 110 had previously been positioned in gap 125, then light will be guided to wafer 110.
The cold drawing 130 of some embodiments has at least one fluid passage of the main body 133 extending through cold drawing 130.In certain embodiments, wall includes supply manifold and/or the return manifolds fluidly connected with the passage in cold drawing.As by described in more detail, this allows fluid flows through passageway to be cooled to cold drawing 130.Supply manifold and/or return manifolds can be the parts of the one of wall 105, or can be connected to wall.Cold drawing 130 is also known as pedestal.
LED 120 and cold drawing 130 have the combination thickness less than 1 inch, and may be stacked in batch type load lock apparatus.Some embodiments have the combination thickness of less than about 0.5 inch.Compared with height typically typical lamp module in the range of 4 inches to 8 inches, LED occupies less space.The efficiency of heating surface of LED is higher than the efficiency of heating surface of the heating module of standard, and the wavelength of LED light can be chosen so that the efficiency of heating surface maximizes.LED can be transmitted in the light of any wavelength that can be absorbed by wafer.It is for instance possible to use the LED of the light being transmitted in UV, visible or NIR wave-length coverage.In certain embodiments, LED emission is at about 450nm or the light in the range of about 400nm to about 500nm or in the range of about 300nm to about 600nm.In certain embodiments, LED emission has the wavelength of about 1000nm or the near infrared light of the wavelength in the range of about 900nm to about 1100nm.One or more embodiments use the biobelt heating with NIR and visible wavelength.Such as, the half in LED 120 can launch the light at 450nm, and half launches the light at 1000nm.During heating technique, the absorption curve varied with temperature based on substrate, NIRLED can activate on the time different from visible LED.
The LED 120 of some embodiments is made up of the array of single LED.Depending on the size of wafer to be heated, array can be any suitably sized.In certain embodiments, LED includes having in the range of about 200 to about 1500 LED or in the range of about 400 to about 1300 LED or in the range of about 600 to about 1100 LED or the array of about 900 LED.In certain embodiments, the array of LED can be controlled by district so that the different piece of LED array can have different power output.
In use, wafer 110 is loaded in box 100, and is increased to above cold drawing 130 by elevating lever 140.It is said that in general, elevating lever 140 has the length of the distance of at least the 50% of the gap, front side 132 125 that be enough to move apart wafer 110 cold drawing 130.For purposes of illustration, Fig. 1 only illustrates the elevating lever 140 supporting bottom wafer.It will be understood by those skilled in the art, however, that elevating lever 140 can support any or all in wafer 110.Can simultaneously or separately moving lifting bar 140 so that all of wafer 110 moves simultaneously, or allows individually to control the movement of wafer 110.
Wafer 110 is positioned to as far as possible near LED 120.It is said that in general, during heating, at least 50% location, the place wafer 110 away from gap 125 between cold drawing 130 and LED 120 described in cold drawing 130.Such as, if LED 120 and cold drawing 130 are located so that gap 125 is about 20mm, the most during heating, wafer 110 will be elevated above cold drawing 130 at least 10mm.Gap 125 between cold drawing 130 and LED 120 is up to about 50mm.In certain embodiments, gap 125 is in the range of about 1mm to about 20mm or in the range of about 2mm to about 15mm.In certain embodiments, wafer 110 is moved into the distance being less than about 5mm, 4mm, 3mm, 2mm or 1mm away from heater.
During the pumping circulation of load lock chamber, wafer 110 can be kept to leave cold drawing 130, and wafer 110 is heated by LED 120, wait vacuum transfer simultaneously.When exchanging wafer 110, close LED 120, and by heat exchanger 160, heat is removed from pedestal.In one embodiment, heat exchanger 160 makes water (or other fluids) flow through the passage in the wall 105 of box 100, and flows through the passage 525 in the cold drawing 130 (or pedestal 510) shown in Fig. 6.Contact cooling LED 120 between dorsal part 121 and the dorsal part 131 of cold drawing of LED 120 and wafer 110.
After the treatment, wafer 110 is back loaded in box 100.Wafer 110 is placed on cold drawing 130, and cools down during discharge technology.Have exchanged wafer 110 upon factor interface, then LED 120 can start again at and add thermal bimorph 110.
In certain embodiments, the diameter of each cold drawing 130 both greater than substrate.Such as, the box 100 for 300mm wafer can have the cold drawing 130 of diameter about 320mm.In certain embodiments, cold drawing 130 is square, and has the length and width of about 320mm.
Embodiment shown in Fig. 1 provides parallel pretreatment and the post processing of the original volume of production not affecting system.It addition, the thermal shock when heating and cooling wafer can be reduced.LED 120 can raise the temperature of wafer 110, and need not they be directly placed on hot plate, and when removing heat extraction from system, utilizes cold drawing 130, and wafer will cool down.
Fig. 2 to Fig. 4 illustrates other aspects incorporating resistance-type heating and the disclosure of pedestal cooling utilizing thermal boundary (thermalbreak).Here, thick-film resistor heating pedestal and cold pedestal stack with the thermal boundary 240 between the two pedestal.Thermal boundary 240 can be the hood-like reflector of solar heat protection 250 (shown in Fig. 2) such as with vacuum gap 235, the vacuum area 335 (shown in Fig. 3) being drained or low thermal conductivity material 440 (shown in Fig. 4).Thermal boundary reduces the amount of the heater energy being radiated to cooling base in load lock apparatus.
Each embodiment in embodiment shown in Fig. 2 to Fig. 4 can operate in a manner analogous.Main Differences between Fig. 1 and Fig. 2 to Fig. 4 is heater.LED 120 in Fig. 1 is substituted by resistance type heater 220,320,420 in Fig. 2 to Fig. 4 respectively.
With reference to Fig. 2, thermal boundary 240 provides heater 220, reflector 250 to separate between cold drawing 230.Reflector 250 is positioned adjacent to cold drawing 230, and spaced apart with cold drawing 230 by least one thermal boundary 240.Heater 220 is positioned adjacent to reflector 250, and spaced apart with reflector 250 by least one thermal boundary 240.During emptying, thermal boundary 240 allows to empty heater 220, gas between reflector 250 and cold drawing 230 from box 200, thus reduces the pressure between parts.Reducing the heat transfer carried out by convection current at low pressures, therefore, heater 220 has minor impact to cold drawing 230.It addition, reflector 250 provides another to hinder between heater 220 and cold drawing 230.Depend on the size such as wanting separate parts, any appropriate number of thermal boundary 240 can be there is.
Fig. 3 illustrates another embodiments and methods cold drawing 330 and the heater 320 of stacking completely cut off.Here, the vacuum area 335 with partial vacuum is formed between cold drawing 330 and heater 320, and there is enough gaps to reduce the heat transfer between two plates." partial vacuum " used in this respect represents the region of the pressure of the reduction serving as the obstruction for convection current.This will allow wafer heating and be cooled under higher pressure occurring, and at a higher pressure, convection current has the large effect to technique.
In figure 3, heater 320 is shown in cold drawing 330 and contacts at edge 350.For making the effect of convection current minimize, isolator can be used to connect heater 320 and cold drawing 330.Such as, lower thermal conductivity binding agent or other low thermal conductivity materials can be placed between cold drawing 330 and heater 320 with the heat transfer between prevention unit.This may be additionally referred to as hot pad (thermalgasket).In embodiment shown in figures 4 and 5, low thermal conductivity material 440 is used as the isolator between heater 420 and cold drawing 430.
Embodiment shown in Fig. 2 to Fig. 5 can be retrofitted in existing load lock chamber, or can be single box.In use, wafer lift pins 260,360,460 wafer 210,310,410 is moved to firmly against close over heater 220,320,420.Preheating wafer 210,310,410 is completed in the case of the front side not making heater 220,320,420 contact wafer 210,310,410.Existing wafer 210,310,410 was placed on cold drawing 230,330,430 before leaving system.Similar with 1 embodiment of figure, the embodiment of Fig. 2 to Fig. 5 provides the heating parallel with other technique and cooling so that yield will not be significantly affected by adding and preheat and the adverse effect of rear cooling technique.
Embodiment shown in Fig. 2 to Fig. 4 has the most controlled elevating lever 260,360,460, and these the most controlled elevating levers can promote or reduce any single or groups of wafer in box.For promoting and reducing the elevating lever of bar and control the space that element occupies in box, and some embodiments do not use elevating lever.In certain embodiments, as shown in Figure 5, wafer lift device 470 is used once to move all of wafer.Single wafer lift device 470 is used to can take up the space more less than using multiple single elevating levers.Embodiment shown in Fig. 5 is identical at all of aspect with the embodiment of Fig. 4, and exception is only that elevating mechanism.Allowing multiple independent elevating lever in the case of lifting single wafer at Fig. 4, Fig. 5 uses the single wafer lift device that all of wafer can be made to move together.Single wafer lift device can make all of wafer move to the heating location (as shown in the figure) raised from the cooling position reduced easily.
Wafer lift device is positioned to support the periphery 472 of wafer 410.Wafer lift device 470 can be made up of any suitable material that can contact wafer safely.Wafer can be moved to the position closer to heater 420 by wafer lift device 470 from the position of neighbouring cold drawing 430.Multiple wafers can be moved apart the distance of the 50% of at least gap, front side of cold drawing by wafer lift device simultaneously.
Another aspect of the present disclosure relates to double-type (dual) high temperature/cryogen pedestal box.Current cooling base is designed, in order to when cooling down substrate from technological temperature, current cooling base and cryogen exchanged heat with aquaporin.It has been found by the present inventors that in the case of fluid is heated rapidly or replaces with hot-fluid simply, the thermal mass of pedestal allows quick heat.
Fig. 6 illustrates the embodiment of the pedestal box 500 of the one or more embodiments according to the disclosure.For illustrative purposes, the box 500 shown in Fig. 6 does not have heater.It will be understood to those of skill in the art that box 500 can have any one of heater shown in various embodiment.Box 500 is shown as having three pedestals 510, and these pedestals 510 can support one or more wafer (not shown).Pedestal 510 is connected to supply manifold 520 and return manifolds 530, and fluidly connects with both.Fluid passage 525 extends through each pedestal in pedestal 510, and is formed between supply manifold 520 and return manifolds 530 and fluidly connect.For illustrative purposes, the top base 510 in Fig. 6 is shown as being cut half to illustrate fluid passage 525.It is said that in general, fluid passage 525 is closed in the main body of pedestal 510.Pedestal 510 in Fig. 6 each has multiple groove 540, these grooves 540 can by such as robot use with by wafer orientation on pedestal.
The size of each pedestal 510 may be set to support any substrate.In certain embodiments, each pedestal 510 be dimensioned so as to support 300mm wafer.The scope of the quantity of pedestal 510 can be to any quantity that will mate in space from 1.Such as, box 500 can be positioned in load lock apparatus.Size based on pedestal-pedestal spacing and parts is limited the maximum quantity of pedestal 510 by the size of load lock apparatus.In certain embodiments, there is the pedestal 510 of the multiple that quantity is 6, such as, 12,18 or 24 pedestals.
In use, fluid source (not shown) is connected to supply manifold 520 and return manifolds 530.Fluid source can be any suitable fluid source, including but not limited to, cold water reservoir (reservoir) or recirculator, hot water tank or recirculator, heated and/or cooled cylinder or offer have the source of the fluid of the thermal capacitance being different from water.The fluid carrying out fluid source flows into supply manifold 520, at supply manifold 520, flows and is divided in the mulitpath to manifold.For each pedestal 510, there is at least one path.In embodiment shown in figure 6, each pedestal has six single fluid passages 525.But, this is only a kind of possible configuration, and is not construed as limiting the scope of the present disclosure.In certain embodiments, each pedestal include independently at least one, two, three, four, five, six, seven, eight, nine, 10,11,12,13,14,15,16 or more fluid passage 525.
The length of any fluid passage 525 depends on followed path.Such as, the straight passage being connected with return manifolds 530 by supply manifold 520 will have the length more shorter than the fluid passage of the peripheral bending around pedestal 510.Embodiment shown in Fig. 6 has six fluid passages 525, and wherein, three groups of passages have about the same length.Two passage 525a have about the same length, and two passage 525b have about the same length, and two passage 525c have about the same length.Each in fluid passage 525 can have and any one the different length in other passages.
The diameter that can change fluid passage 525 such as passes through the flow velocity of described passage, or the flow velocity that balance is by multiple passages with impact.In certain embodiments, in pedestal 510, all of fluid passage 525 all has identical diameter.In one or more embodiments, each in fluid passage 525 has independent of any one diameter in other fluid passages 525 in pedestal 510.In certain embodiments, the diameter of fluid passage 525 increases along with the increase of the length of fluid passage 525.In figure 6, such as, the diameter of passage 525a can be more than the diameter of passage 525b, and the diameter of passage 525b can be more than passage 525c.
Flow towards return manifolds 530 in the fluid passage 525 that fluid from supply manifold 520 flows through in pedestal 510.At return manifolds 530, the fluid from multiple single passages 525 and pedestal 510 is combined and flows to such as waste line or recirculating system.
Current heat exchanger system has the big thermal mass fluid kept within specified temperatures, and described fluid can be used for cooling down rapidly and the aluminium base 510 in heating load locking device.The thermal mass of the fluid in each system is about order of magnitude greater than the thermal mass of pedestal.
Fig. 7 illustrates the heat exchanger system 600 of the one or more embodiments according to the disclosure.Two process chamber 680 and are connected to transfer station 682 of central authorities, and transfer station 682 of described central authorities has at least one robot 684 wherein.Though it is shown that two, but at least one load lock apparatus 686 is positioned at the front end of transfer station 682, and it is used as factor interface (FI) to allow to move to inside processing system wafer outside processing system.Box 500 is shown in each in load lock apparatus 686.Box 500 can substitute by any one in described box embodiment, or can be the part of the one of load lock apparatus.As the part of the one of load lock apparatus, box wall is by identical for the wall with load lock apparatus.
Suction line 630 extends to load lock apparatus 686 from heating system 640 and cooling system 660.Suction line 630 fluidly connects with the supply manifold 520 of each box 500.Suction line 630 also fluidly connects with suction line heater connection 631 and suction line cooler connector 632.Suction line heater connection 631 and suction line cooler connector 632 are any suitable connection members allowing to separate.Such as, suction line heater connection 630 and/or suction line cooler connector 632 can be the valves that can close to isolate suction line 630.Outlet line 635 fluidly connects with the return manifolds 530 on each box 500.Outlet line 635 also fluidly connects with outlet line heater connection 636 and outlet line cooler connector 637.As suction line connector, outlet line heater connection 636 and outlet line cooler connector 637 can be any suitable connection members allowing to separate.Such as, outlet line heater connection 636 and/or outlet line cooler connector 637 can be the valves that can close to isolate outlet line 635.
During factor interface (FI) transmits, heating system 640 uses high temperature fluid that pedestal 510 is heated to predetermined temperature (such as, up to 300 DEG C).During emptying to pressure of foundation and shift pressure, utilization is flow through the hot fluid of system, pedestal 510 adds thermal bimorph.During vacuum shifts, pedestal 510 will stay in that heat, till to the last a wafer is transferred into processing chamber or is removed from load lock apparatus 686.
Adding hot fluid to provide, heating system 640 is connected to the inlet manifold 520 on each box in box 500.The stream adding hot fluid leaves heating system 640, and flow to inlet manifold 520 through the valve 641 opened.Through pedestal 510 and after entering outlet manifold 530, fluid by the valve 642 opened toward being back to heating system 640.During this circulates, bypass valve 643 is that Guan Bi is in case fluid flow crosses bypass loop 644.
In order to prevent mixing, can isolation cooling system 660.Close valve closing 661 and valve 662 to stop flowing out and flowing into cooling system 660.Cooler bypass loop 664 fluidly connects with suction line cooler connector 632 and outlet line cooler connector 637.Cooler bypass loop 664 can include that cooler bypass valve 663, described cooler bypass valve 663 can be opened so that the fluid in cooling system 660 can continue to be circulated by bypass loop 664 think that cooling down operation is got ready.
Similarly, in order to prevent mixing, heating system 640 can be isolated.Valve is provided with heater by-pass loop, described heater by-pass loop fluidly connects with suction line heater connection and outlet line heater connection, described heater by-pass loop includes bypass valve, in order to allow fluid to flow between suction line and outlet line.
From pedestal 510, the most remove all of wafer, so that it may access (engage) cooling system 660.In order to access cooling system 660 and prevent from mixing with heating system 640, heating system can be isolated.Heater by-pass loop 644 fluidly connects with suction line heater connection 631 and outlet line heater connection 636.Heater by-pass loop 644 also can have heater by-pass valve 643 to allow fluid to circulate in heater pipeline.In order to isolate heating system 640, valve 641 and valve 642 are Guan Bis, and bypass valve 643 is being circulated by bypass loop 644 allowing to add hot fluid of opening.Bypass valve 663 on cooling system 660 can be Guan Bi to prevent from flowing further through bypass loop 664.Valve 661 and valve 662 be open to allow fluid to flow to inlet manifold 520 from cooling system 660, and flow through the pedestal 510 in box 500.In this moment, thermofluid system is diverted from pedestal 510, and hot fluid will be released pedestal 510 by the fluid in cooling system 660, thus promptly makes the pedestal 510 with wafer be cooled to predetermined temperature.
Once meet chilling temperature, then can promote wafer to depart from cold drawing.Once complete the cooling to wafer, then cooling system 660 will be diverted from box 500, and will change valve so that heating system 640 can heat pedestal 510 again.
Configuration shown in Fig. 7 provides the yield of the initial designs not affecting system, parallel pretreatment and post processing.Thermal shock when heating and cooling wafer will reduce, because utilizing basis base material heat and cool down wafer.Embodiment of the disclosure and allow minimum load-lock volume design, the load-lock volume design of described minimum is compared other concepts and will be improved volume of production.The configuration of Fig. 7 illustrates the exemplary heating/cooling cycle system of the one or more embodiments according to the disclosure.Heating/cooling cycle system can be used together with any one in described wafer case.
Although foregoing is for embodiment of the disclosure, but other and the further embodiment elemental range without departing from the disclosure of the disclosure can be designed, and the scope of the present disclosure resides in the claims hereinafter appended.
Claims (20)
1. a wafer case, described wafer case includes:
Wall, described wall supports multiple cold drawings, and described wall allows to access the front side of at least some cold drawing in described cold drawing；
Multiple LED, the plurality of LED positions against the dorsal part of described cold drawing, and has the front side spaced apart with the front side of adjacent cold drawing to form gap, and the plurality of LED is guided to the front side of described adjacent cold drawing；And
Wafer lift device, described wafer lift device is positioned to support the periphery of wafer.
Wafer case the most according to claim 1, it is characterised in that each cold drawing in the plurality of cold drawing includes at least one fluid passage, at least one fluid passage described is through the main body of described cold drawing.
Wafer case the most according to claim 2, it is characterised in that at least one wall described includes supply manifold, connects described supply manifold and the described fluid channel fluid in the described main body of described cold drawing.
Wafer case the most according to claim 3, it is characterised in that at least one wall described farther includes return manifolds, connects described return manifolds and the described fluid channel fluid in the described main body of described cold drawing.
Wafer case the most according to claim 1, it is characterised in that the described gap between the front side of described LED and the front side of described adjacent cold drawing is in the range of about 2mm to about 15mm.
Wafer case the most according to claim 1, it is characterised in that described LED launches the light being in about 450nm wavelength.
Wafer case the most according to claim 1, it is characterised in that multiple wafers are moved apart the distance of at least the 50% of the described gap, front side of described cold drawing by described wafer lift device.
8. a system, described system includes:
At least one load lock chamber, at least one load lock chamber described accommodates wafer case according to claim 4；
Suction line, described suction line fluidly connects with supply manifold, suction line heater connection and suction line cooler connector；
Outlet line, described outlet line fluidly connects with return manifolds, outlet line heater connection and outlet line cooler connector；
Heater by-pass loop, described heater by-pass loop fluidly connects with described suction line heater connection and described outlet line heater connection, and described heater by-pass loop includes that bypass valve is to allow fluid to flow between described suction line and described outlet line；And
Cooler bypass loop, described cooler bypass loop fluidly connects with described suction line cooler connector and described outlet line cooler connector, and described cooler bypass loop includes that cooler bypass valve is to allow fluid to flow between described suction line and described outlet line.
9. a wafer case, described wafer case includes:
Wall, described wall supports multiple cold drawings, and described wall allows to access the front side of at least some cold drawing in described cold drawing so that wafer can position adjacent to the front side of described cold drawing；
Reflector, the dorsal part of described reflector at least some cold drawing in described cold drawing, is separated the dorsal part of described reflector with described cold drawing by least one thermal boundary；
Heater, the dorsal part of described heater with described reflector, adjacent to the dorsal part of described reflector, is separated by described heater by least one thermal boundary so that have gap between the dorsal part of described heater with the front side of adjacent cold drawing；And
Multiple elevating levers, the plurality of elevating lever is positioned in described cold drawing.
Wafer case the most according to claim 9, it is characterised in that each cold drawing in the plurality of cold drawing includes at least one fluid passage, at least one fluid passage described is through the main body of described cold drawing.
11. wafer case according to claim 10, it is characterised in that at least one wall described includes supply manifold, connect described supply manifold and the described fluid channel fluid in the described main body of described cold drawing.
12. wafer case according to claim 11, it is characterised in that at least one wall described farther includes return manifolds, connect described return manifolds and the described fluid channel fluid in the described main body of described cold drawing.
13. wafer case according to claim 9, it is characterised in that the described gap between front side and the dorsal part of described heater of described cold drawing is in the range of about 2mm to about 50mm.
14. wafer case according to claim 9, it is characterised in that described heater is resistance type heater.
15. wafer case according to claim 9, it is characterised in that described elevating lever has the length of the distance of be enough to make described gap, front side that wafer moves apart described cold drawing at least 50%.
16. 1 kinds of wafer case, described wafer case includes:
Wall, described wall supports multiple cold drawings, and described wall allows to access the front side of at least some cold drawing in described cold drawing so that wafer can position adjacent to the front side of described cold drawing；
Heater, described heater is positioned on the dorsal part of described cold drawing so that the dorsal part of described heater is spaced apart with the front side of adjacent cold drawing to form gap；And
Isolator, described isolator is between described heater and described cold drawing.
17. wafer case according to claim 16, it is characterised in that described isolator includes partial vacuum, and the edge of cold drawing described in the EDGE CONTACT of described heater.
18. wafer case according to claim 16, it is characterised in that described isolator includes that low thermal conductivity material, described low thermal conductivity material are positioned between described heater and described cold drawing so that described heater is not touched with described cold drawing.
19. wafer case according to claim 16, it is characterised in that at least one wall described includes supply manifold, connect described supply manifold and at least one fluid channel fluid in the main body of described cold drawing.
20. wafer case according to claim 19, it is characterised in that at least one wall described farther includes return manifolds, connect described return manifolds and the described fluid channel fluid in the described main body of described cold drawing.
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|---|---|---|---|
| US201562106568P | 2015-01-22 | 2015-01-22 | |
| US62/106,568 | 2015-01-22 |
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| CN105826226A true CN105826226A (en) | 2016-08-03 |
| CN105826226B CN105826226B (en) | 2020-08-21 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201610039843.1A Active CN105826226B (en) | 2015-01-22 | 2016-01-21 | Batch heating and cooling chamber or load lock |
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| Country | Link |
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| US (2) | US10283379B2 (en) |
| JP (1) | JP2016154222A (en) |
| KR (1) | KR102444827B1 (en) |
| CN (1) | CN105826226B (en) |
| TW (1) | TW201639063A (en) |
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Also Published As
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| KR20160090760A (en) | 2016-08-01 |
| JP2016154222A (en) | 2016-08-25 |
| TW201639063A (en) | 2016-11-01 |
| US11315806B2 (en) | 2022-04-26 |
| KR102444827B1 (en) | 2022-09-20 |
| CN105826226B (en) | 2020-08-21 |
| US20160218028A1 (en) | 2016-07-28 |
| US20190259638A1 (en) | 2019-08-22 |
| US10283379B2 (en) | 2019-05-07 |
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