CN108615692A - Film magazine, reaction chamber and semiconductor equipment - Google Patents
Film magazine, reaction chamber and semiconductor equipment Download PDFInfo
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- CN108615692A CN108615692A CN201611142352.6A CN201611142352A CN108615692A CN 108615692 A CN108615692 A CN 108615692A CN 201611142352 A CN201611142352 A CN 201611142352A CN 108615692 A CN108615692 A CN 108615692A
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- film magazine
- partition board
- substrate
- top plate
- bottom plate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/6732—Vertical carrier comprising wall type elements whereby the substrates are horizontally supported, e.g. comprising sidewalls
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02183—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing tantalum, e.g. Ta2O5
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02697—Forming conducting materials on a substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention discloses a kind of film magazine, reaction chamber and semiconductor equipments.The film magazine of the present invention, including top plate and bottom plate and the multiple support elements being arranged between top plate and bottom plate, the inner wall of support element, which is provided with, places position for placing substrate, it further include partition board, partition board is arranged between top plate and bottom plate, and top plate, partition board and bottom plate are mutually parallel, partition board is used to increase the heat radiation to each substrate.The reaction chamber of the present invention includes the film magazine of the present invention.The semiconductor equipment of the present invention includes the reaction chamber of the present invention.Film magazine provided by the invention can make the substrate for being located at each position in film magazine reach preset temperature within the essentially identical time.
Description
Technical field
The invention belongs to field of semiconductor processing, and in particular to a kind of film magazine, reaction chamber and semiconductor equipment.
Background technology
Physical vapour deposition (PVD) (Physical Vapor Deposition, abbreviation PVD) technology refers to using physical method,
Material source (solid or liquid) surface is gasificated into gaseous atom, molecule or partial ionization into ion, and by low-pressure gas,
The technology of film of the matrix surface deposition with certain specific function.By taking copper-connection PVD process flow as an example, as shown in Figure 1,
Degassing processing step, pre-cleaning processes step, Ta (N) deposition process steps and Cu depositing operations are generally included in the technological process
Step.
Degassing processing step is of great significance as the first step in entire technological process, needs in vacuum system
In, the impurity such as the vapor that the surface of substrate S is adsorbed in an atmosphere are got rid of, the surface of cleaning substrate S is subsequent process steps
Substrate S as clean as possible is provided.
Please refer to Fig. 2, it is existing to go to the gas chamber to include：Upper group of annular light source 21, the following group annular light source 22 and placement base
The film magazine 10 of piece S, upper group of annular light source 21 and the following group annular light source 22 are arranged around film magazine 10, for go to gas chamber to provide heat
Amount.For the efficiency of raising degassing technique, the mode of degassing technique is can be used while being carried out to more substrate S, it is existing for putting
The film magazine 10 of more substrate S is set, as shown in Figure 3.The film magazine 10 includes：The top plate 1 and bottom plate 2 being oppositely arranged, and it is located at bottom
The opposite side of the multiple support elements 3 being arranged between plate 2 and the marginal position of top plate 1, multiple support elements 3 is provided with multiple placement positions
4, for placing more substrate S.
Generally in practical operation, needs in advance placement film magazine to be gone in gas chamber to preheat, wait in reaction chamber
After reaching a certain steady temperature, substrate S is put into each placement position 4 successively, and reach preset temperature in the temperature of substrate S
Afterwards, substrate S is spread out of into gas chamber to complete degassing technique.
It in this way can there are the following problems：Heat radiation ratio suffered by the intermediate substrate S and top plate 1 or bottom
The heat radiation that the adjacent substrate S of plate 2 is subject to is few, and reaches identical preset temperature, positioned at when intermediate substrate S needs to heat
Between more adjacent than with top plate 1 or bottom plate 2 substrate S need the time heated long, temperature uniformity is not between substrate S in temperature-rise period
Good, the efficiency so as to cause substrate S heating reduces, and the degassing process time extends, and is unfavorable for improving technological effect.
Invention content
The present invention is directed at least solve one of the technical problems existing in the prior art, it is proposed that one kind can make to be located at piece
The substrate of each position reaches time essentially identical film magazine, reaction chamber and the semiconductor equipment of preset temperature in box.
According to an aspect of the present invention, provide a kind of film magazine, including top plate and bottom plate and setting in the top plate and
Multiple support elements between the bottom plate, the inner wall of the support element, which is provided with, places position for placing substrate, which is characterized in that
Further include partition board,
The partition board is arranged between the top plate and the bottom plate, and the top plate, the partition board and the bottom plate phase
Mutually parallel, the partition board is used to increase the heat radiation to each substrate.
Optionally, film magazine according to the present invention, each support element is formed by connecting by least two sub- support elements, described
Partition board is arranged between the tie point of the two neighboring sub- support element.
Optionally, film magazine according to the present invention,
Multiple sub- support elements are arranged between the partition board adjacent with the top plate and the top plate；
Multiple sub- support elements are arranged between the two neighboring partition board；And
Multiple sub- support elements are arranged between the partition board adjacent with the bottom plate and the bottom plate；And
The sub- support element being provided at circumferentially spaced along the partition board.
Optionally, film magazine according to the present invention is provided with one or two on the inside of the sub- support element and places position.
Optionally, film magazine according to the present invention, the sub- support element are column and/or frame-shaped.
Optionally, film magazine according to the present invention, the placement position are boss or groove.
Optionally, film magazine according to the present invention, the partition board are made of metal material；The metal material is alloy material
Material.
Optionally, film magazine according to the present invention, the alloy material are aluminium alloy.
According to another aspect of the present invention, a kind of reaction chamber, including cavity, film magazine and multigroup annular light source are provided,
The film magazine and multigroup annular light source are located in the cavity, and multigroup annular light source is arranged around the film magazine, use
It is located at the multiple substrates placed in the film magazine, annular light source described in every group and the cavity in the side heat from the film magazine
Side wall between be additionally provided with reflex reflector, the film magazine is the film magazine of the present invention.
According to another aspect of the present invention, a kind of semiconductor equipment is provided, the reaction chamber of the present invention is included.
In the film magazine of the present invention, reaction chamber and semiconductor equipment, placed by increasing partition board in film magazine, and by substrate
Between two neighboring partition board, when carrying out technique, due to being heated to preset temperature, increased partition board to film magazine in advance
Can heat radiation directly be carried out to substrate, that is to say, that be located at the substrate of different location in film magazine all by from partition board and ring
Heat radiation of both shape light source reduces mutual between substrate so as to reduce the heat source difference that each substrate is subject to
It influences, keeps the time that the substrate for being located at each position in film magazine reaches preset temperature essentially identical, improve the heating rate of substrate,
And then improve the processing performance of process efficiency and film magazine.
Description of the drawings
Fig. 1 is the flow diagram of existing PVD process flow；
Fig. 2 is the existing structural schematic diagram for going to gas chamber；
Fig. 3 is the structural schematic diagram of existing film magazine；
Fig. 4 is the stereogram of the film magazine of the embodiment of the present invention 1；
Fig. 5 is the front view of the film magazine of the embodiment of the present invention 1；
Fig. 6 is the stereogram of the reaction chamber of the embodiment of the present invention 2；
Fig. 7 is the structural schematic diagram of the semiconductor equipment of the embodiment of the present invention 3；
Wherein, reference numeral is：10, film magazine；21, upper group of annular light source；22, the following group annular light source；30, cavity；40, anti-
Electro-optical device；50, pass sheet mouth；60, elevating mechanism；1, top plate；2, bottom plate；3, support element；4, position is placed；5, partition board；6, sub- support
Part.
Specific implementation mode
To make those skilled in the art more fully understand technical scheme of the present invention, below in conjunction with the accompanying drawings and specific embodiment party
Present invention is further described in detail for formula.
Embodiment 1：
Fig. 4 and Fig. 5 are please referred to, the present embodiment provides a kind of film magazines, including top plate 1, bottom plate 2 and setting are in 1 and of top plate
Multiple support elements between bottom plate 2, the inner wall of support element, which is provided with, places position 4 for placing substrate S；The film magazine further includes partition board
5, partition board 5 is arranged between top plate 1 and bottom plate 2, and top plate 1, partition board 5 and bottom plate 2 are mutually parallel, and partition board 5 is for increasing to base
Heat radiations of the piece S in normal direction.
It is understood that as can be seen that the top for being located at film magazine is top plate 1, positioned at film magazine from Fig. 4 and Fig. 5
Bottom be bottom plate 2.The film magazine of the present embodiment, between top plate 1 and bottom plate 2 be provided with multiple partition boards 5, it is two neighboring every
Substrate S is placed between plate 5, since partition board 5 can also be released as annular light source of the top plate 1 in absorbing reaction chamber as bottom plate 2
The heat released, therefore, when substrate S is placed between two neighboring partition board 5, partition board 5 also can carry out heat radiation to substrate S,
I.e. for the substrate S for the medium position for being placed on film magazine, as the substrate S positioned at 2 adjacent position of top plate 1 or bottom plate, all
It can be by the heat radiation from top plate 1 or bottom plate 2 and annular light source, that is to say, that as long as being provided in film magazine, either
Which position in film magazine, the radiation source and thermal exposure of the heat radiation suffered by substrate S are all identical, so, respectively
It is identical that the substrate S of position, which reaches the identical preset temperature required time, i.e. the film magazine of the present embodiment, which shortens, to be located at
The heating-up time of the substrate S of intermediate region, the heating rate of substrate S is improved, to improve the processing performance of film magazine and go
The efficiency of gas technique.
It should be noted that top plate 1, bottom plate 2 and multiple partition boards 5 can be made of identical material, and three
Structure can be identical.
Wherein, each support element is formed by connecting by least two sub- support elements 6, and partition board 5 is arranged in two neighboring sub- support
Between the tie point of part 6.
Wherein, multiple sub- support elements 6 are arranged between the adjacent partition board 5 of top plate 1 and top plate 1；Multiple sub- support elements 6 are set
It sets between two neighboring partition board 5；And multiple sub- support elements 6 are arranged between the adjacent partition board 5 of bottom plate 2 and bottom plate 2；And
Being provided at circumferentially spaced along partition board 5 of sub- support element 6.
Please refer to Fig. 4 and Fig. 5, be located at each adjacent two partition board 5 fringe region between, the partition board 5 adjacent with top plate 1 and
Circumferentially spaced multiple sub- support elements 6 between top plate 1 and between the partition board 5 adjacent with bottom plate 1 and bottom plate 1, can
Support force is provided with bottom plate 2 for the two neighboring partition board 5, partition board 5 and top plate 1 and partition board 5, to make two adjacent partition boards
5, there is a certain distance between partition board 5 and top plate 1 and partition board 5 and bottom plate 2；Every sub- support element 6 inside (i.e. direction every
The direction of the central area of plate 5) it is provided with and places position 4, being located on multiple sub- support elements 6 between each adjacent two partition board 5
The placement position 4 of same vertical height is used to support the fringe region of substrate S, i.e., the placement position 4 of same vertical height can make
Substrate S places position 4 and provides support force for substrate S, fall off and shift in film magazine to avoid substrate S in being horizontally arranged.
Wherein, the quantity of the placement position 4 on multiple sub- support elements 6 between each adjacent two partition board 5 is identical.
That is, the quantity of the placement position 4 in multiple sub- support elements 6 between two neighboring partition board 5 is identical, with
Ensure that the quantity for the substrate S that the placement position 4 of every sub- support element 6 is supported is identical, and substrate S horizontal can be heated.It can manage
It solves, the height of position 4 is placed in every sub- support element 6 to be consistent.
Wherein, the inside of sub- support element 6 is provided with one or two and places position.
Why so set, being to make each substrate S being placed in film magazine, the hot spoke sent out in addition to annular light source
It penetrates, moreover it is possible to by the heat radiation of at least one partition board 5, to accelerate the heating rate of substrate S.
Wherein, sub- support element 6 is column and/or frame-shaped.Certainly, the form of sub- support element 6 is not limited thereto, can be with
Using the structure of other shapes, position 4 is placed as long as can be formed on, details are not described herein.
Wherein, it is boss or groove to place position 4.
That is, it can be the groove being located on sub- support element 6 to place position 4, can also be on sub- support element 6
Boss, if on multiple sub- support elements 6 between each adjacent two partition board 5 can positioned at the placement position 4 of same vertical height
Play the role of carrying substrates S, carrying form does not limit, and details are not described herein.
Wherein, partition board 5 is made of metal material.
Why so set, be since metal material has good heat absorption and heat conductivility, can will be from ring light
The heat that source is absorbed into is transferred to substrate S in a manner of heat radiation, to be heated to substrate S.
Further, metal material preferred alloy material.
Further, the preferred aluminium alloy of alloy material.
Why partition board 5 prepared using aluminium alloy, is since aluminum alloy materials have big thermal capacity, light weight, heat conduction fast
The advantages of, and it is identical in the power of annular light source, the material settling out temperature of aluminium alloy and substrate S are closer to, favorably
It conducts heat in substrate S.
Certainly, the material for preparing of the partition board in the present embodiment is not limited thereto, and can also be made of other materials, only
It wants to heat substrate S by way of heat radiation, details are not described herein.
The film magazine of the present embodiment, by increasing multiple partition boards 5 in the film magazine 10, and by substrate S be positioned over it is two neighboring every
Between plate 5, when carrying out technique, partition board 5 can directly carry out substrate S the heat radiation of normal direction and intimate normal direction,
And the heat radiation energy of normal direction is maximum, that is to say, that be located at the substrate S of different location in film magazine 10 all by from partition board
5 and annular light source of both heat radiation, and by the heat radiation of a large amount of normal direction, be located in the middle part of film magazine to improve
Substrate the energy by heat radiation, reduce the heat source difference that each substrate S is subject to, reduce mutual between substrate S
It influences, keeps the time that the substrate S for being located at each position in film magazine 10 reaches preset temperature identical, improve the heating rate of substrate S,
And then improve the processing performance of process efficiency and film magazine 10.
Embodiment 2：
Fig. 6 is please referred to, the present embodiment provides a kind of reaction chambers, including cavity 30, film magazine 10 and multigroup annular light source (packet
Include group annular light source 21 and the following group annular light source 22), film magazine 10 and multigroup annular light source are located in cavity 30, multigroup ring light
Source is arranged around film magazine 10, for being located at the multiple substrate S placed in film magazine 10, every group of ring light from the side heat of film magazine 10
Reflex reflector 40 is additionally provided between source and the side wall of cavity 30, wherein film magazine 10 is the film magazine 10 of embodiment 1.
It is understood that film magazine 10 is located at the center in cavity 30, upper group of annular light source 21 and the following group ring light
Source 22 is arranged around film magazine 10, to be heated to film magazine 10 by upper group of annular light source 21 and the following group annular light source 22, simultaneously
Heat is provided for cavity 30.
Fig. 6 is please referred to, group annular light source 21 and the following group annular light source 22, the position of pass sheet mouth 50 are provided in cavity 30
It is set between group annular light source 21 and the following group annular light source 22, while being all provided at the top of upper group of annular light source 21 and surrounding
Reflex reflector 40 is set, reflex reflector 40 can be reflector or reflective tube；Similarly, in the bottom of the following group annular light source 22 and four
It is also provided with reflex reflector 40 week, with this, multiple reflex reflectors 40 form a more closed environment, pass through the long period
Heating after, 30 interior energy of cavity forms a stable hot environment, piece and is gone to each substrate S at this point it is possible to pass successively
Gas technique.
The reaction chamber of the present embodiment includes the film magazine of embodiment 1, by increasing multiple partition boards 5 in film magazine 10, and will
Substrate S is positioned between two neighboring partition board 5, when carrying out technique, partition board 5 can directly to substrate S carry out normal direction or
The heat radiation of intimate normal direction, that is to say, that be located at the substrate S of different location in film magazine 10 all by from partition board 5 and ring
Heat radiation of both shape light source has been improved particularly the heat radiation energy that the substrate in the middle part of film magazine is subject to, so as to drop
The heat source difference that low each substrate S is subject to reduces influencing each other between substrate S, makes the base for being located at each position in film magazine 10
The time that piece S reaches preset temperature is identical, improves the heating rate of substrate S, and then improves process efficiency and film magazine 10
Processing performance.
Embodiment 3：
Fig. 7 is please referred to, the present embodiment provides a kind of semiconductor equipments, include the reaction chamber of embodiment 2.
Wherein, semiconductor equipment further includes elevating mechanism 60, elevating mechanism 60 be located at the outside of reaction chamber and with react
The indoor film magazine 10 of chamber connects, for driving film magazine 10 to lift.
It can be seen from figure 7 that elevating mechanism 60 is located at outside reaction chamber and is connect with film magazine 10, it is used for film magazine 10
In substrate S from the height and position that the placement location of the different height on film magazine 10 is transferred to pass sheet mouth 50.
The semiconductor equipment of the present embodiment includes the reaction chamber of embodiment 2, by increasing multiple partition boards in film magazine 10
5, and between substrate S is positioned over two neighboring partition board 5, when carrying out technique, partition board 5 directly can carry out normal to substrate S
The heat radiation of direction or intimate normal direction, that is to say, that be located at the substrate S of different location in film magazine 10 all by from partition board
5 and annular light source of both heat radiation, be improved particularly the heat radiation energy that the substrate in the middle part of the film magazine is subject to, so as to
The heat source difference that each substrate S is subject to enough is reduced, influencing each other between substrate S is reduced, makes to be located at each position in film magazine 10
Substrate S reach preset temperature time it is identical, improve the heating rate of substrate S, and then improve process efficiency and film magazine
10 processing performance.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and the exemplary implementation that uses
Mode, however the present invention is not limited thereto.For those skilled in the art, in the essence for not departing from the present invention
In the case of refreshing and essence, various changes and modifications can be made therein, these variations and modifications are also considered as protection scope of the present invention.
Claims (10)
1. a kind of film magazine, including top plate and bottom plate and multiple support elements for being arranged between the top plate and the bottom plate, institute
The inner wall for stating support element is provided with placement position for placing substrate, which is characterized in that and further include partition board,
The partition board is arranged between the top plate and the bottom plate, and the top plate, the partition board and the bottom plate are mutually flat
Row, the partition board are used to increase the heat radiation to each substrate.
2. film magazine according to claim 1, which is characterized in that each support element is connected by least two sub- support elements
It forms, the partition board is arranged between the tie point of the two neighboring sub- support element.
3. film magazine according to claim 2, which is characterized in that
Multiple sub- support elements are arranged between the partition board adjacent with the top plate and the top plate；
Multiple sub- support elements are arranged between the two neighboring partition board；And
Multiple sub- support elements are arranged between the partition board adjacent with the bottom plate and the bottom plate；And
The sub- support element being provided at circumferentially spaced along the partition board.
4. film magazine according to claim 3, which is characterized in that be provided with one or two on the inside of the sub- support element and put
Set.
5. according to the film magazine described in claim 2-4 any one, which is characterized in that the sub- support element is column and/or frame
Shape.
6. film magazine according to any one of claims 1-4, which is characterized in that the placement position is boss or groove.
7. film magazine according to claim 1, which is characterized in that the partition board is made of metal material；The metal material
Material is alloy material.
8. film magazine according to claim 7, which is characterized in that the alloy material is aluminium alloy.
9. a kind of reaction chamber, including cavity, film magazine and multigroup annular light source, the film magazine and multigroup annular light source are located at
In the cavity, multigroup annular light source is arranged around the film magazine, described for being located at from the side heat of the film magazine
The multiple substrates placed in film magazine, reflex reflector is additionally provided between annular light source and the side wall of the cavity described in every group,
It is characterized in that, the film magazine is any film magazine of claim 1 to 8.
10. a kind of semiconductor equipment, which is characterized in that including the reaction chamber described in claim 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611142352.6A CN108615692B (en) | 2016-12-12 | 2016-12-12 | Cassette, reaction chamber and semiconductor device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611142352.6A CN108615692B (en) | 2016-12-12 | 2016-12-12 | Cassette, reaction chamber and semiconductor device |
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| CN108615692A true CN108615692A (en) | 2018-10-02 |
| CN108615692B CN108615692B (en) | 2021-04-09 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109371383A (en) * | 2018-12-25 | 2019-02-22 | 南京爱通智能科技有限公司 | A kind of carrier suitable for ultra-large atomic layer deposition apparatus |
| CN109385622A (en) * | 2018-12-25 | 2019-02-26 | 南京爱通智能科技有限公司 | A kind of flow passage structure suitable for super large-tonnage atomic layer deposition apparatus |
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| CN1618125A (en) * | 2002-11-26 | 2005-05-18 | 株式会社迪斯科 | Box for storing multiple semiconductor sheets |
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| CN201918372U (en) * | 2010-12-27 | 2011-08-03 | 武汉新芯集成电路制造有限公司 | Wafer box |
| CN105624633A (en) * | 2014-10-28 | 2016-06-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Heating cavity and physical vapor deposition equipment |
| CN105826226A (en) * | 2015-01-22 | 2016-08-03 | 应用材料公司 | Batch heating and cooling chamber or load locking device |
| CN106033734A (en) * | 2015-03-12 | 2016-10-19 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Heating chamber and semiconductor processing device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109371383A (en) * | 2018-12-25 | 2019-02-22 | 南京爱通智能科技有限公司 | A kind of carrier suitable for ultra-large atomic layer deposition apparatus |
| CN109385622A (en) * | 2018-12-25 | 2019-02-26 | 南京爱通智能科技有限公司 | A kind of flow passage structure suitable for super large-tonnage atomic layer deposition apparatus |
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