CN108615692B

CN108615692B - Cassette, reaction chamber and semiconductor device

Info

Publication number: CN108615692B
Application number: CN201611142352.6A
Authority: CN
Inventors: 璐惧己; 贾强
Original assignee: Beijing Naura Microelectronics Equipment Co Ltd
Current assignee: Beijing Naura Microelectronics Equipment Co Ltd
Priority date: 2016-12-12
Filing date: 2016-12-12
Publication date: 2021-04-09
Anticipated expiration: 2036-12-12
Also published as: CN108615692A

Abstract

The invention discloses a wafer box, a reaction chamber and semiconductor equipment. The wafer box comprises a top plate, a bottom plate and a plurality of supporting pieces arranged between the top plate and the bottom plate, wherein the inner wall of each supporting piece is provided with a placing position for placing a substrate, the wafer box also comprises a partition plate, the partition plate is arranged between the top plate and the bottom plate, the top plate, the partition plate and the bottom plate are mutually parallel, and the partition plate is used for increasing the heat radiation of each substrate. The reaction chamber of the present invention comprises the cartridge of the present invention. The semiconductor device of the present invention comprises the reaction chamber of the present invention. The wafer box provided by the invention can enable the substrates at each position in the wafer box to reach the preset temperature in basically the same time.

Description

Cassette, reaction chamber and semiconductor device

Technical Field

The invention belongs to the field of semiconductor processing, and particularly relates to a wafer box, a reaction chamber and semiconductor equipment.

Background

Physical Vapor Deposition (PVD) is a technique of vaporizing the surface of a material source (solid or liquid) into gaseous atoms, molecules, or partially ionized ions by a Physical method, and depositing a film with a specific function on the surface of a substrate by low pressure gas. Taking a copper interconnect PVD process flow as an example, as shown in fig. 1, the process flow generally includes a degas process step, a pre-clean process step, a ta (n) deposition process step, and a Cu deposition process step.

The degassing process step is a first step in the whole process flow, and is significant in that impurities such as water vapor adsorbed in the atmosphere on the surface of the substrate S are removed in a vacuum system, the surface of the substrate S is cleaned, and the substrate S as clean as possible is provided for the subsequent process steps.

Referring to fig. 2, the conventional degassing chamber includes: an upper set of annular light sources 21, a lower set of annular light sources 22 and a cassette 10 for holding substrates S, the upper set of annular light sources 21 and the lower set of annular light sources 22 being arranged around the cassette 10 for providing heat to the degassing chamber. In order to improve the efficiency of the degassing process, a degassing process may be performed on a plurality of substrates S at the same time, and a conventional cassette 10 for holding the plurality of substrates S is shown in fig. 3. The cartridge 10 includes: the substrate placing device comprises a top plate 1 and a bottom plate 2 which are oppositely arranged, and a plurality of supporting pieces 3 which are arranged between the edge positions of the bottom plate 2 and the top plate 1, wherein a plurality of placing positions 4 are arranged on the opposite sides of the plurality of supporting pieces 3 and used for placing a plurality of substrates S.

Generally, in actual operation, the degassing chamber for holding the wafer cassette needs to be preheated in advance, after the temperature in the reaction chamber reaches a certain constant temperature, the substrate S is sequentially placed in each placing position 4, and after the temperature of the substrate S reaches a preset temperature, the substrate S is transferred out of the degassing chamber to complete the degassing process.

In this way, the following problems may occur: the heat radiation received by the substrate S positioned in the middle is less than that received by the substrate S adjacent to the top plate 1 or the bottom plate 2, the substrate S positioned in the middle reaches the same preset temperature, the time for heating the substrate S positioned in the middle is longer than that for heating the substrate S adjacent to the top plate 1 or the bottom plate 2, and the uniformity of the temperature among the substrates S is poor in the temperature rising process, so that the heating efficiency of the substrate S is reduced, the degassing process time is prolonged, and the process effect is not improved.

Disclosure of Invention

The present invention has been made to solve at least one of the problems occurring in the prior art, and an object of the present invention is to provide a cassette, a reaction chamber, and a semiconductor apparatus, which can make time for substrates located at respective positions in the cassette to reach a predetermined temperature substantially the same.

According to an aspect of the present invention, there is provided a sheet cassette comprising a top plate, a bottom plate, and a plurality of supports disposed between the top plate and the bottom plate, the supports having inner walls provided with placement positions for placing substrates, characterized by further comprising a partition,

the partition plate is arranged between the top plate and the bottom plate, the top plate, the partition plate and the bottom plate are parallel to each other, and the partition plate is used for increasing heat radiation to each substrate.

Optionally, according to the sheet cassette of the present invention, each of the supporting members is formed by connecting at least two sub-supporting members, and the partition is disposed between the connecting points of two adjacent sub-supporting members.

Alternatively, a cassette according to the present invention,

a plurality of said sub-supports disposed between said partition adjacent to said top plate and said top plate;

a plurality of the sub-supports are disposed between adjacent two of the partitions; and

a plurality of said sub-supports disposed between said deck and said floor adjacent to said floor; and is

The sub-supporting pieces are arranged at intervals along the circumferential direction of the partition board.

Optionally, according to the sheet cassette of the present invention, the inner side of the sub-support is provided with one or two placing positions.

Optionally, according to the cartridge of the present invention, the sub-support is columnar and/or frame-shaped.

Optionally, according to the cartridge of the present invention, the placement location is a boss or a groove.

Optionally, according to the sheet cassette of the present invention, the partition is made of a metal material; the metal material is an alloy material.

Optionally, according to the cassette of the present invention, the alloy material is an aluminum alloy.

According to another aspect of the invention, a reaction chamber is provided, which comprises a cavity, a sheet box and a plurality of groups of annular light sources, wherein the sheet box and the plurality of groups of annular light sources are located in the cavity, the plurality of groups of annular light sources are arranged around the sheet box and used for heating a plurality of substrates placed in the sheet box from the side surface of the sheet box, a light reflecting device is further arranged between each group of annular light sources and the side wall of the cavity, and the sheet box is the sheet box provided by the invention.

According to another aspect of the present invention, there is provided a semiconductor device comprising the reaction chamber of the present invention.

In the wafer box, the reaction chamber and the semiconductor device, the partition plates are additionally arranged in the wafer box, and the substrate is placed between the two adjacent partition plates, so that the substrate can be directly subjected to heat radiation by the additionally arranged partition plates because the wafer box is heated to the preset temperature in advance during the process, namely, the substrates at different positions in the wafer box are subjected to heat radiation from the partition plates and the annular light source, so that the heat source difference of each substrate can be reduced, the mutual influence among the substrates is reduced, the time for the substrates at all positions in the wafer box to reach the preset temperature is basically the same, the temperature rising speed of the substrates is improved, and the process efficiency and the process performance of the wafer box are improved.

Drawings

FIG. 1 is a schematic flow diagram of a conventional PVD process;

FIG. 2 is a schematic structural diagram of a conventional degassing chamber;

FIG. 3 is a schematic view of a conventional wafer cassette;

FIG. 4 is a perspective view of a cartridge of embodiment 1 of the present invention;

FIG. 5 is a front view of a cartridge of embodiment 1 of the present invention;

FIG. 6 is a perspective view of a reaction chamber of example 2 of the present invention;

fig. 7 is a schematic structural view of a semiconductor device of embodiment 3 of the present invention;

wherein the reference numerals are: 10. a sheet cassette; 21. the upper group of annular light sources; 22. a lower set of annular light sources; 30. a cavity; 40. a light reflecting means; 50. a sheet conveying port; 60. a lifting mechanism; 1. a top plate; 2. a base plate; 3. a support member; 4. placing bits; 5. a partition plate; 6. a sub-support.

Detailed Description

In order to make the technical solutions of the present invention better understood, the present invention will be described in further detail with reference to the accompanying drawings and specific embodiments.

Example 1:

referring to fig. 4 and 5, the embodiment provides a film cassette, which includes a top plate 1, a bottom plate 2, and a plurality of supporting members disposed between the top plate 1 and the bottom plate 2, wherein a placing position 4 is disposed on an inner wall of the supporting member for placing a substrate S; the wafer box further comprises a partition plate 5, wherein the partition plate 5 is arranged between the top plate 1 and the bottom plate 2, the top plate 1, the partition plate 5 and the bottom plate 2 are parallel to each other, and the partition plate 5 is used for increasing the heat radiation of the substrate S in the normal direction.

It will be appreciated from figures 4 and 5 that the uppermost part of the cassette is the top plate 1 and the lowermost part of the cassette is the bottom plate 2. In the cassette of this embodiment, a plurality of partition plates 5 are provided between the top plate 1 and the bottom plate 2, the substrate S is placed between two adjacent partition plates 5, since the partition plates 5 can absorb the heat released from the ring light source in the reaction chamber like the top plate 1 and the bottom plate 2, when the substrate S is placed between two adjacent partition plates 5, the partition plates 5 can radiate the heat to the substrate S, that is, the substrate S placed at the middle position of the cassette can receive the heat radiation from the top plate 1 or the bottom plate 2 and the ring light source as well as the substrate S located at the adjacent position of the top plate 1 or the bottom plate 2, that is, as long as the substrate S is placed in the cassette, the radiation source and the amount of the heat radiation to which the substrate S is subjected are the same regardless of the position in the cassette, and therefore, the time required for the substrate S at each position to reach the same preset temperature is the same, that is, the cassette of this embodiment shortens the temperature-rise time of the substrate S located in the middle region, and increases the temperature-rise speed of the substrate S, thereby improving the process performance of the cassette and the efficiency of the degassing process.

It should be noted that the top plate 1, the bottom plate 2 and the plurality of partition plates 5 may be made of the same material, and the structures of the three may be the same.

Wherein each support is formed by connecting at least two sub-supports 6, and the partition 5 is arranged between the connection points of two adjacent sub-supports 6.

Wherein a plurality of sub-supports 6 are provided between the partition plate 5 adjacent to the top plate 1 and the top plate 1; a plurality of sub-supports 6 are provided between adjacent two of the partition plates 5; and a plurality of sub-supports 6 disposed between the partition 5 adjacent to the base plate 2 and the base plate 2; and the sub-supports 6 are all provided at intervals along the circumferential direction of the partition 5.

Referring to fig. 4 and 5, a plurality of sub-supporting members 6, which are circumferentially spaced between edge regions of two adjacent partition boards 5, between the partition board 5 adjacent to the top board 1 and the top board 1, and between the partition board 5 adjacent to the bottom board 1 and the bottom board 1, can provide supporting force for the two adjacent partition boards 5, the partition boards 5 and the top board 1, and the partition boards 5 and the bottom board 2, so that a certain distance is formed between the two adjacent partition boards 5, the partition boards 5 and the top board 1, and the partition boards 5 and the bottom board 2; the placing positions 4 are arranged on the inner side (i.e. in the direction towards the central area of the partition boards 5) of each sub-support piece 6, the placing positions 4 located at the same vertical height on the sub-support pieces 6 between every two adjacent partition boards 5 are used for supporting the edge area of the substrate S, namely the placing positions 4 at the same vertical height can enable the substrate S to be horizontally placed, and the placing positions 4 provide supporting force for the substrate S so as to avoid the substrate S from falling and shifting in the wafer box.

Wherein the number of the placement sites 4 on the plurality of sub-supports 6 between every two adjacent partitions 5 is the same.

That is, the number of the placing positions 4 in the plurality of sub-supports 6 located between the adjacent two partition plates 5 is the same to ensure that the number of the substrates S supported by the placing positions 4 of each sub-support 6 is the same and the substrates S can be horizontally heated. It will be appreciated that the height of the placement site 4 in each sub-support 6 should be uniform.

Wherein the inner side of the sub-support 6 is provided with one or two placement locations.

The arrangement is such that each substrate S placed in the cassette is subjected to heat radiation from at least one partition 5 in addition to the heat radiation from the ring light source, thereby accelerating the temperature rise of the substrate S.

Wherein, the sub-supporting member 6 is columnar and/or frame-shaped. Of course, the form of the sub-support 6 is not limited to this, and other shapes of structures may be adopted as long as the placement site 4 can be formed thereon, which will not be described herein again.

Wherein, the placing position 4 is a boss or a groove.

That is to say, the placing positions 4 may be grooves located on the sub-support 6, or may be bosses located on the sub-support 6, and the placing positions 4 located at the same vertical height on the plurality of sub-supports 6 between every two adjacent partition boards 5 are only required to play a role of bearing the substrate S, and the bearing form is not limited, and is not described herein again.

Wherein, the baffle 5 is made of metal material.

This is so arranged that the metal material has good heat absorbing and heat conducting properties, and can transfer heat absorbed from the ring light source to the substrate S in a heat radiating manner, thereby heating the substrate S.

Further, the metal material is preferably an alloy material.

Further, the alloy material is preferably an aluminum alloy.

The aluminum alloy is adopted to prepare the partition plate 5, because the aluminum alloy material has the advantages of large heat capacity, light weight and quick heat conduction, and under the condition that the power of the annular light source is the same, the stable temperature of the materials of the aluminum alloy and the substrate S is closer, which is beneficial to heat transfer to the substrate S.

Of course, the material for preparing the partition board in this embodiment is not limited to this, and other materials may be used, as long as the substrate S can be heated by heat radiation, and details thereof are not described herein.

The cassette of this embodiment is manufactured by adding a plurality of spacers 5 in the cassette 10, and placing the substrate S between two adjacent spacers 5, during the process, the partition 5 can directly radiate heat in the normal direction and the nearly normal direction to the substrate S, while the heat radiation energy in the normal direction is the largest, that is, the substrates S located at different positions in the cassette 10 are subjected to heat radiation from both the partition 5 and the ring light source, and are subjected to a large amount of heat radiation in the normal direction, therefore, the heat radiation energy of the substrates in the middle of the wafer box is improved, the heat source difference of each substrate S is reduced, the mutual influence among the substrates S is reduced, the time for the substrates S at each position in the wafer box 10 to reach the preset temperature is the same, the temperature rise speed of the substrates S is improved, and the process efficiency and the process performance of the wafer box 10 are further improved.

Example 2:

referring to fig. 6, the present embodiment provides a reaction chamber, including a cavity 30, a cassette 10, and a plurality of groups of ring light sources (including an upper group of ring light sources 21 and a lower group of ring light sources 22), where the cassette 10 and the plurality of groups of ring light sources are located in the cavity 30, the plurality of groups of ring light sources are disposed around the cassette 10, and are configured to heat a plurality of substrates S placed in the cassette 10 from a side surface of the cassette 10, and a light reflecting device 40 is further disposed between each group of ring light sources and a side wall of the cavity 30, where the cassette 10 is the cassette 10 of embodiment 1.

It will be appreciated that cassette 10 is centrally located within chamber 30 and that upper and lower sets of annular

light sources

21, 22 are disposed about cassette 10 to provide heat to cassette 10 via upper and lower sets of annular

light sources

21, 22 while providing heat to chamber 30.

Referring to fig. 6, an upper group of annular light sources 21 and a lower group of annular light sources 22 are disposed in the cavity 30, the position of the sheet passing opening 50 is set between the upper group of annular light sources 21 and the lower group of annular light sources 22, and meanwhile, the top and the periphery of the upper group of annular light sources 21 are both provided with light reflecting devices 40, and the light reflecting devices 40 may be light reflecting plates or light reflecting cylinders; similarly, the light reflecting devices 40 are disposed at the bottom and around the lower group of annular light sources 22, so that a plurality of light reflecting devices 40 form a relatively closed environment, and after a long time of heating, a stable high temperature environment can be formed in the cavity 30, and at this time, the substrates S can be sequentially transferred and subjected to a degassing process.

The reaction chamber of this embodiment, including the cassette of embodiment 1, through increasing a plurality of baffles 5 in cassette 10, and place substrate S between two adjacent baffles 5, when carrying out the technology, baffle 5 can directly carry out the heat radiation of normal direction or nearly normal direction to substrate S, that is, the substrate S that is located different positions in cassette 10 all receives the heat radiation from baffle 5 and annular light source two sides, especially improved the heat radiation energy that the substrate that is located the cassette middle part received, thereby can reduce the heat source difference that each substrate S received, reduced the mutual influence between the substrates S, make the time that the substrate S that is located each position in cassette 10 reaches preset temperature the same, improved the rate of rise of temperature of substrate S, and then improved process efficiency and the technology performance of cassette 10.

Example 3:

referring to fig. 7, the present embodiment provides a semiconductor device including the reaction chamber of embodiment 2.

The semiconductor device further comprises a lifting mechanism 60, wherein the lifting mechanism 60 is located outside the reaction chamber and connected with the wafer box 10 in the reaction chamber, and is used for driving the wafer box 10 to lift.

As can be seen from fig. 7, the elevating mechanism 60 is located outside the reaction chamber and connected to the cassette 10, and serves to transfer the substrates S in the cassette 10 from the different height placing positions on the cassette 10 to the height position of the sheet transfer port 50.

The semiconductor device of this embodiment, including the reaction chamber of embodiment 2, by adding a plurality of partitions 5 in the cassette 10, and placing the substrate S between two adjacent partitions 5, when performing the process, the partitions 5 can directly perform the heat radiation in the normal direction or the direction close to the normal direction to the substrate S, that is, the substrates S at different positions in the cassette 10 all receive the heat radiation from the partitions 5 and the ring light source, especially, the heat radiation energy received by the substrate at the middle of the cassette is improved, so that the heat source difference received by each substrate S can be reduced, the mutual influence between the substrates S is reduced, the time for the substrates S at each position in the cassette 10 to reach the preset temperature is the same, the temperature rising speed of the substrate S is improved, and further, the process efficiency and the process performance of the cassette 10 are improved.

It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.

Claims

1. A wafer box comprises a top plate, a bottom plate and a plurality of supporting pieces arranged between the top plate and the bottom plate, wherein the inner walls of the supporting pieces are provided with placing positions for placing substrates, and the wafer box is characterized by also comprising a clapboard,

the baffle is arranged between the top plate and the bottom plate, the top plate, the baffle and the bottom plate are parallel to each other, and the baffle is used for absorbing heat released by the annular light source and increasing heat radiation to each substrate.

2. The cartridge of claim 1, wherein each of the supporting members is formed by connecting at least two sub-supporting members, and the partition is disposed between the connecting points of the adjacent two sub-supporting members.

3. The cartridge of claim 2,

4. A cartridge according to claim 3, wherein the inner side of the sub-support is provided with one or two placing positions.

5. A cartridge according to any one of claims 2 to 4, wherein the sub-holder is columnar and/or frame-shaped.

6. A cartridge according to any one of claims 1 to 4, wherein the placement site is a boss or a groove.

7. The cartridge of claim 1, wherein the partition is made of a metal material; the metal material is an alloy material.

8. The cartridge of claim 7, wherein the alloy material is an aluminum alloy.

9. A reaction chamber, includes cavity, spool box and multiunit annular light source are located in the cavity, the multiunit annular light source centers on the spool box sets up for from the side heating of spool box is located a plurality of substrates of placing in the spool box, every group annular light source with still be provided with reflex reflector between the lateral wall of cavity, its characterized in that, the spool box is any of claims 1 to 8 the spool box.

10. A semiconductor device comprising the reaction chamber of claim 9.