CN105810574A - 金属绝缘体半导体（mis）接触及其形成方法以及晶体管 - Google Patents

金属绝缘体半导体（mis）接触及其形成方法以及晶体管 Download PDF

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CN105810574A
CN105810574A CN201610004901.7A CN201610004901A CN105810574A CN 105810574 A CN105810574 A CN 105810574A CN 201610004901 A CN201610004901 A CN 201610004901A CN 105810574 A CN105810574 A CN 105810574A
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contact
metal
mis
metal ion
terminal
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CN105810574B (zh
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陈家佑
刘作光
山下典洪
叶俊呈
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International Business Machines Corp
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International Business Machines Corp
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Abstract

本发明涉及金属绝缘体半导体(MIS)接触及其形成方法以及晶体管。描述了一种用于形成金属绝缘体半导体(MIS)接触的方法、包括MIS的晶体管以及MIS接触。该方法包括：蚀刻用于形成接触的开口，所述开口延伸到半导体区域的上表面。该方法同样包括以选择的深度在半导体区域的上表面内注入金属离子；并且将半导体区域的上表面转换为金属氧化物绝缘层。该方法进一步包括在绝缘层上形成金属层。

Description

金属绝缘体半导体（MIS）接触及其形成方法以及晶体管
技术领域
本发明涉及晶体管，并且更具体地涉及在晶体管中注入形成的金属绝缘体半导体(MIS)接触。
背景技术
场效应晶体管(FET)一般包括三个端子：源极、漏极和栅极。在FET性能中的关键因素是外部源极-漏极电阻(Rext)或在源极和漏极接触处的电阻。硅化物(接合到金属的硅)已被用于源极和漏极接触，但硅化物接触电阻对Rext是显著的贡献者。金属绝缘体半导体(MIS)接触已被视为硅化物的替代。MIS接触通过在源极和漏极接触与相应的源极和漏极区域之间沉积绝缘层来形成。从理论上讲，MIS接触基于足够薄的绝缘层提供较低的电阻。
发明内容
根据本发明的一个实施例，一种形成金属绝缘体半导体(MIS)接触的方法包括：蚀刻用于形成接触的开口，该开口延伸到半导体区域的上表面；以选择的深度在半导体区域的上表面内注入金属离子；将半导体区域的上表面转换为金属氧化物绝缘层；以及在绝缘层上形成金属层。
根据另一个实施例，一种晶体管包括：源极端子；源极接触，其在源极端子上形成；漏极端子，其由栅极端子与源极端子分离；以及漏极接触，其在漏极端子上形成，其中源极接触和漏极接触是金属绝缘体半导体(MIS)接触，以及MIS接触的绝缘体分别经由在将金属离子注入到所述上表面中之后的源极端子和漏极端子的上表面的氧化来形成。
根据另一个实施例，一种用于晶体管的端子的金属绝缘体半导体(MIS)接触包括：由半导体材料形成的端子；绝缘层，其通过在金属离子的注入之后的端子的表面部分的氧化形成；以及金属层。
其它特征和优点通过本发明的技术来实现。本发明的其它实施例和方面在此详细描述并且被认为是所要求保护的发明的一部分。为更好地理解本发明的优点和特征，参考说明书和附图。
附图说明
被认为是本发明的主题被特别指出并在说明书结尾处的权利要求中清楚地要求保护。本发明的前述和其它特征以及优点从结合附图的以下详细描述中是显而易见的，在附图中：
图1是具有根据本发明实施例的源极接触和漏极接触的晶体管的横截面视图。
图2至图6是示出在制造根据本发明的实施例的源极接触和漏极接触中涉及的工艺步骤的横截面视图，在附图中：
图2示出用于开始接触形成工艺的中间结构；
图3示出将接触开口蚀刻到图2的结构中所得的中间结构；
图4示出在图3中所示的接触开口中的金属离子注入；
图5示出从图4中所示的金属离子注入所得的绝缘层；
图6示出根据实施例的形成为具有注入到绝缘层中的金属离子注入的MIS接触的源极和漏极接触；以及
图7是示出在制造根据本发明另一实施例的源极接触和漏极接触中涉及的工艺步骤的横截面视图。
具体实施方式
如上所述，Rext是在晶体管性能中的关键因素。一方面，硅化物接触电阻降低已被证明具有挑战性，在于诸如硅化镍(NiSi)和硅化钛(TiSi)的传统硅化物可能不能提供所需的接触电阻。另一方面，在理论上预测用于MIS接触的较低电阻已经难以在实践中实现。从MIS接触形成观测的较高电阻被认为与关于绝缘层的传统沉积技术相关，表明绝缘层的产生的厚度过大而不能达到所需的效果。因此，在此公开的是基于在薄绝缘层中金属注入而不是在更厚的绝缘层之上的金属沉积，通过形成MIS接触用于降低Rext的方法和相应结构的实施例。
现在总体上参考附图，图1是根据本发明实施例的具有源极接触110、漏极接触120以及栅极接触130的FET100的横截面视图。接触110、120、130未在图1中详述。而是，提供了晶体管100的结构的整体布置，指出下面详述的工艺并不限于任何特定类型的晶体管。此外，虽然外延生长的源极115和漏极125在示例性附图中使用，但是在此讨论的工艺也适用于注入的源极和漏极区域。为示例性晶体管100示出的三个FET端子，即源极115、漏极125以及栅极135分别具有与它们相关联的源极接触110、漏极接触125以及栅极接触135。源极和漏极端子115、125可以在半导体衬底140之上形成。源极接触110和漏极接触120形成为注入形成的MIS接触，这在下面详述。
图2至图6是示出制造根据本发明实施例的源极接触110和漏极接触120中涉及的工艺步骤的横截面视图。应当理解的是，本实施例适用于平面FET结构或三维结构FET(例如鳍片FET)。在图2中所示的中间结构200包括在衬底140上形成的源极115和漏极125。在所示实施例中，源极115和漏极125可通过在衬底140上生长选择性的外延硅来升高(即提高)。还应当理解的是，源极115和漏极120可以例如通过诸如将掺杂剂原子注入到半导体衬底的其它工艺来形成。氧化物层210(例如，二氧化硅(SiO2))形成在源极115和漏极125之上，以及在栅极叠层220之上。氮化硅(SiN)层230在氧化物层210之上被形成为蚀刻和离子注入掩模。
图3示出从在图2中示出的结构200中蚀刻源极接触开口310和漏极接触开口320所得的中间结构300。两个接触开口310、320通过诸如反应离子蚀刻(RIE)工艺的干法蚀刻工艺来蚀刻，以暴露源极115和漏极125的顶表面。蚀刻也可以部分地延伸到源极115和漏极125的半导体材料中。接触开口310、320可被同时蚀刻。可替代地，基于从多个器件形成产生的对准问题，例如RIE工艺可以单独地执行，以获得每一个接触开口310、320。图4示出中间结构400并且示出根据在此详述的实施例的源极接触110和漏极接触120的形成中的关键工艺。金属离子410注入到源极115和漏极125的上部区域中。金属离子410可以例如是铝(Al)、镧(La)、锌(Zn)或钛(Ti)。金属离子410注入深度可以被调整。调整的结果是产生低Rext的非常薄的绝缘层510(图5)。金属离子410注入可在真空中执行。
图5示出从在图4中示出的金属离子410注入所得的中间结构500，接着氧化以将源极115和漏极125的注入的上部区域转换为薄金属氧化物绝缘层510。根据一个实施例，氧化是从暴露于空气来实现的，并且可选地可通过例如氧注入或氧等离子体的沉积来辅助。在金属离子410注入之后，使用热处理(热退火)，以辅助氧化物的形成。取决于被注入的金属离子410，氧化铝(Al2O3)、氧化镧(LaOx)、氧化锌(ZnO2)或二氧化钛(TiO2)可以形成。氧化的结果是金属氧化物绝缘层510和在它下面的相互混合层520。当金属离子410首先被注入时，它们在源极115和漏极125的顶表面处间隙地(interstitially)存在。通过氧化工艺，绝缘层510被形成。作为扩散的结果，在氧化物和半导体(源极115或漏极125)之间的相互混合层520也会产生。作为金属离子410注入的结果，所得的绝缘层510比MIS接触的典型绝缘层的厚度(约2纳米(nm))更薄。根据在此讨论的实施例的绝缘层510可以厚为小于1nm。
图6示出在金属离子410的注入以及离子到金属氧化物绝缘层510的转换之后所形成的MIS接触110、120。除了绝缘层510之外，在图6中所示的结构600同样包括如由本领域中已知的金属填充工艺所形成的金属衬里610和金属填料620。如图6所示，金属衬里610在开口310、320的表面上和在绝缘层510上共形沉积。金属衬里610可以例如是Ti和氮化钛(TiN)。金属填料620(例如钨(W))然后在金属衬里610之上的开口310、320中沉积。在金属填料620的沉积之后，化学机械抛光(CMP)工艺同样对于在图6中示出的结构600执行。这完成源极接触110和漏极接触120的形成。如上所述，Rext在源极接触110和漏极接触120中减小，该源极接触110和漏极接触120是通过在绝缘层410中的金属离子420的注入而不是在绝缘层之上的金属层的沉积来形成的MIS接触。所得的MIS接触110、120由金属填料620(金属)、绝缘层510(绝缘体)以及源极115或漏极125半导体表面(半导体)组成。
图7是在制造根据本发明的另一实施例的源极接触110和漏极接触125中涉及的工艺步骤的横截面视图。图7示出中间结构700，该中间结构700示出在图4中示出的工艺的替代实施例。具体地，在金属离子410的注入和到金属氧化物绝缘层510的转换之前，金属衬里610在源极接触开口310和漏极接触开口320中共形沉积。在金属填料620和CMP工艺之后，如在图6中所示，包括源极接触110和漏极接触120的结构600从图7的结构700获得。此外，金属离子410注入深度被选择以产生薄绝缘层510。同样，热处理可以适用于帮助氧化物(例如，Al2O3、LaOx、ZnO2、TiO2)的形成。
在此所用的术语仅用于描述特定实施例的目的，并非意在限制本发明。如在此所用，单数形式“一”、“一个”和“该”旨在也包括复数形式，除非上下文另外明确指出。将进一步理解，在本说明书中使用时的术语“包括”和/或“包含”指定所述特征、整数、步骤、操作、元件和/或组件的存在，但不排除存在或添加一个以上的其它特征、整数、步骤、操作、元件、组件和/或它们的组合。
相应的结构、材料、动作以及所有部件等同物或在下面的权利要求书中的步骤加功能要素旨在包括任何结构、材料或动作，用于执行结合如具体所要求保护的其它所要求保护的要素的功能。本发明的描述已经呈现用于说明和描述的目的，但并非意在穷举或限制以公开形式的本发明。许多修改和变化对于本领域的普通技术人员将是显而易见的，而不脱离本发明的范围和精神。实施例被选择并描述以最好地解释本发明的原理和实际应用，并且使本领域的技术人员能够理解用于具有各种修改的各种实施例的本发明为适合于预期的特定用途。
在此所描绘的流程图仅仅是一个示例。对于该示图或在其中描述的步骤(或操作)可能有许多变化。例如，步骤可以以不同的顺序来执行，或者可以添加、删除或修改。所有这些变化被认为是所要求保护的发明的一部分。
虽然本发明的优选实施例已被描述，但可以理解，无论是现在还是将来，本领域的技术人员可进行属于下面的权利要求范围之内的各种改进和增强。这些权利要求应被解释为保持对首先描述的本发明的适当的保护。
本发明的各种实施例的描述已经呈现用于说明的目的，但不旨在穷尽或限制于所公开的实施例。许多修改和变化对于本领域的普通技术人员将是显而易见的，而不脱离本发明的范围和精神。在此所用的术语被选择以最好地解释实施例的原理、实际应用，或胜于在市场中发现的技术的技术改进，或使本领域的其他普通技术人员能够理解在此公开的实施例。

Claims (20)

1.一种用于形成金属绝缘体半导体(MIS)接触的方法，所述方法包括：
蚀刻用于形成所述接触的开口，所述开口延伸到半导体区域的上表面；
以选择的深度在所述半导体区域的所述上表面内注入金属离子；
将所述半导体区域的所述上表面转换为金属氧化物绝缘层；以及
在所述金属氧化物绝缘层上形成金属层。
2.根据权利要求1所述的方法，其中蚀刻所述开口包括执行通过氧化物层到源极端子或漏极端子的表面的反应离子蚀刻工艺。
3.根据权利要求1所述的方法，进一步包括在所述开口中共形沉积金属衬里。
4.根据权利要求3所述的方法，其中沉积所述金属衬里包括沉积钛和氮化钛。
5.根据权利要求3所述的方法，其中沉积所述金属衬里在注入所述金属离子之前。
6.根据权利要求3所述的方法，其中沉积所述金属衬里在注入所述金属离子之后，并且包括在所述绝缘层上共形沉积所述金属衬里。
7.根据权利要求1所述的方法，其中所述转换包括在注入所述金属离子之后，注入氧到所述半导体区域的所述上表面中以辅助所述金属氧化物绝缘层的形成。
8.根据权利要求1所述的方法，其中所述转换包括在注入所述金属离子之后，执行热退火以辅助所述金属氧化物绝缘层的形成。
9.根据权利要求1所述的方法，其中形成所述金属层包括用金属填料填充所述开口。
10.根据权利要求9所述的方法，其中形成所述金属层包括执行化学机械抛光工艺。
11.根据权利要求1所述的方法，其中注入所述金属离子包括注入铝、镧、锌或钛离子。
12.一种晶体管，包括
源极端子；
源极接触，形成在所述源极端子上；
漏极端子，通过栅极端子与所述源极端子分离；以及
漏极接触，形成在所述漏极端子上，其中
所述源极接触和所述漏极接触是金属绝缘体半导体(MIS)接触，以及
所述MIS接触的所述绝缘体分别经由在将金属离子注入到所述上表面中之后的所述源极端子和所述漏极端子的上表面的氧化来形成。
13.根据权利要求12所述的晶体管，其中所述金属离子由铝、镧、锌或钛离子组成。
14.根据权利要求12所述的晶体管，其中所述源极接触和所述漏极接触同样包括金属衬里和金属填料。
15.根据权利要求14所述的晶体管，其中所述金属衬里由钛和氮化钛组成。
16.根据权利要求14所述的晶体管，其中在所述金属离子的注入之前，所述金属衬里在所述源极接触和所述漏极接触的内表面上共形形成。
17.根据权利要求14所述的晶体管，其中在所述金属离子的注入和所述绝缘层的形成之后，所述金属衬里在所述源极接触和所述漏极接触的内表面上和所述绝缘层上共形形成。
18.一种用于晶体管的端子的金属绝缘体半导体(MIS)接触，所述接触包括：
由半导体材料形成的所述端子；
绝缘层，通过在金属离子的注入之后的所述端子的表面部分的氧化形成；以及
金属层。
19.根据权利要求18所述的接触，其中所述金属离子由铝、镧、锌或钛离子组成。
20.根据权利要求18所述的方法，进一步包括在所述接触的内表面上和在绝缘层上共形形成的金属衬里，其中所述金属衬里由钛和氮化钛组成。
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