CN105789437B - 制造相变化记忆体的方法 - Google Patents
制造相变化记忆体的方法 Download PDFInfo
- Publication number
- CN105789437B CN105789437B CN201610130129.3A CN201610130129A CN105789437B CN 105789437 B CN105789437 B CN 105789437B CN 201610130129 A CN201610130129 A CN 201610130129A CN 105789437 B CN105789437 B CN 105789437B
- Authority
- CN
- China
- Prior art keywords
- layer
- phase
- gap
- change
- material layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims abstract description 42
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 239000000463 material Substances 0.000 claims abstract description 60
- 238000010438 heat treatment Methods 0.000 claims abstract description 45
- 239000012782 phase change material Substances 0.000 claims abstract description 33
- 238000010276 construction Methods 0.000 claims abstract description 25
- 239000011810 insulating material Substances 0.000 claims abstract description 21
- 239000004065 semiconductor Substances 0.000 claims description 50
- 238000009413 insulation Methods 0.000 claims description 21
- 239000010410 layer Substances 0.000 description 171
- 239000012071 phase Substances 0.000 description 44
- 230000008859 change Effects 0.000 description 37
- 230000008569 process Effects 0.000 description 19
- 238000000151 deposition Methods 0.000 description 13
- 230000008021 deposition Effects 0.000 description 13
- 238000005530 etching Methods 0.000 description 12
- 239000012774 insulation material Substances 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 230000004888 barrier function Effects 0.000 description 9
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 8
- 238000000231 atomic layer deposition Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 239000004020 conductor Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 239000002131 composite material Substances 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910000618 GeSbTe Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000001311 chemical methods and process Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- -1 for example Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910005542 GaSb Inorganic materials 0.000 description 1
- 229910005900 GeTe Inorganic materials 0.000 description 1
- 229910005939 Ge—Sn Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- 229910017629 Sb2Te3 Inorganic materials 0.000 description 1
- 229910018110 Se—Te Inorganic materials 0.000 description 1
- 229910020938 Sn-Ni Inorganic materials 0.000 description 1
- 229910020923 Sn-O Inorganic materials 0.000 description 1
- 229910002855 Sn-Pd Inorganic materials 0.000 description 1
- 229910018731 Sn—Au Inorganic materials 0.000 description 1
- 229910008937 Sn—Ni Inorganic materials 0.000 description 1
- 229910008772 Sn—Se Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/861—Thermal details
- H10N70/8613—Heating or cooling means other than resistive heating electrodes, e.g. heater in parallel
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (4)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810339585.8A CN108550696B (zh) | 2016-03-08 | 2016-03-08 | 相变化记忆体 |
CN201610130129.3A CN105789437B (zh) | 2016-03-08 | 2016-03-08 | 制造相变化记忆体的方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610130129.3A CN105789437B (zh) | 2016-03-08 | 2016-03-08 | 制造相变化记忆体的方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201810339585.8A Division CN108550696B (zh) | 2016-03-08 | 2016-03-08 | 相变化记忆体 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105789437A CN105789437A (zh) | 2016-07-20 |
CN105789437B true CN105789437B (zh) | 2018-06-19 |
Family
ID=56387844
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610130129.3A Active CN105789437B (zh) | 2016-03-08 | 2016-03-08 | 制造相变化记忆体的方法 |
CN201810339585.8A Active CN108550696B (zh) | 2016-03-08 | 2016-03-08 | 相变化记忆体 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201810339585.8A Active CN108550696B (zh) | 2016-03-08 | 2016-03-08 | 相变化记忆体 |
Country Status (1)
Country | Link |
---|---|
CN (2) | CN105789437B (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111969105B (zh) * | 2020-08-10 | 2023-08-08 | 长江存储科技有限责任公司 | 一种相变存储器件及其制造方法、操作方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101872778A (zh) * | 2009-04-27 | 2010-10-27 | 旺宏电子股份有限公司 | 集成电路3d相变存储器阵列及制造方法 |
CN102148261A (zh) * | 2010-02-10 | 2011-08-10 | 中国科学院微电子研究所 | 电容器结构及其制造方法 |
CN103489868A (zh) * | 2012-06-13 | 2014-01-01 | 爱思开海力士有限公司 | 半导体装置及其制造方法和存储器系统 |
CN102959693B (zh) * | 2010-06-30 | 2015-08-19 | 桑迪士克科技股份有限公司 | 超高密度垂直与非记忆器件及其制造方法 |
CN105304638A (zh) * | 2015-11-16 | 2016-02-03 | 上海新储集成电路有限公司 | 一种三维相变存储器结构及制造方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100524876C (zh) * | 2006-01-09 | 2009-08-05 | 财团法人工业技术研究院 | 相变化存储元件及其制造方法 |
CN101241925A (zh) * | 2007-02-09 | 2008-08-13 | 财团法人工业技术研究院 | 相变内存装置及其制造方法 |
CN100578753C (zh) * | 2007-03-19 | 2010-01-06 | 财团法人工业技术研究院 | 存储器元件及其制造方法 |
US8575008B2 (en) * | 2010-08-31 | 2013-11-05 | International Business Machines Corporation | Post-fabrication self-aligned initialization of integrated devices |
US9099637B2 (en) * | 2013-03-28 | 2015-08-04 | Intellectual Discovery Co., Ltd. | Phase change memory and method of fabricating the phase change memory |
CN105098071B (zh) * | 2015-07-08 | 2018-01-05 | 江苏时代全芯存储科技有限公司 | 制造相变化记忆体的方法 |
-
2016
- 2016-03-08 CN CN201610130129.3A patent/CN105789437B/zh active Active
- 2016-03-08 CN CN201810339585.8A patent/CN108550696B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101872778A (zh) * | 2009-04-27 | 2010-10-27 | 旺宏电子股份有限公司 | 集成电路3d相变存储器阵列及制造方法 |
CN102148261A (zh) * | 2010-02-10 | 2011-08-10 | 中国科学院微电子研究所 | 电容器结构及其制造方法 |
CN102959693B (zh) * | 2010-06-30 | 2015-08-19 | 桑迪士克科技股份有限公司 | 超高密度垂直与非记忆器件及其制造方法 |
CN103489868A (zh) * | 2012-06-13 | 2014-01-01 | 爱思开海力士有限公司 | 半导体装置及其制造方法和存储器系统 |
CN105304638A (zh) * | 2015-11-16 | 2016-02-03 | 上海新储集成电路有限公司 | 一种三维相变存储器结构及制造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN108550696A (zh) | 2018-09-18 |
CN108550696B (zh) | 2022-02-25 |
CN105789437A (zh) | 2016-07-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10056546B2 (en) | Metal nitride keyhole or spacer phase change memory cell structures | |
KR100668846B1 (ko) | 상변환 기억 소자의 제조방법 | |
CN205542903U (zh) | 非易失性集成电路存储器单元和电阻性随机存取存储结构 | |
US20200395408A1 (en) | Three-dimensional memory device including laterally constricted current paths and methods of manufacturing the same | |
KR100713936B1 (ko) | 상변환 기억 소자 및 그의 제조방법 | |
CN102088059A (zh) | 在集成电路或其它装置上制造小型接脚的方法 | |
US9219231B2 (en) | Phase change memory cells with surfactant layers | |
JP2006344976A (ja) | 相変化記憶素子及びその製造方法 | |
CN103137863B (zh) | 相变随机存取存储器件及其制造方法 | |
KR101511421B1 (ko) | 다층 상변화 물질을 이용하는 3차원 메모리 | |
JP4955218B2 (ja) | 半導体装置 | |
US20150123068A1 (en) | Fin-type memory | |
CN105261630B (zh) | 制造相变化记忆体的方法 | |
JP2006344948A (ja) | 相変化記憶素子及びその製造方法 | |
CN105789437B (zh) | 制造相变化记忆体的方法 | |
US7989920B2 (en) | Phase change memory | |
US10833267B2 (en) | Structure and method to form phase change memory cell with self- align top electrode contact | |
US20130001505A1 (en) | Multilayer structure comprising a phase change material layer and method of producing the same | |
CN105742488B (zh) | 相变化记忆体以及制造相变化记忆体的方法 | |
CN105405971B (zh) | 相变化记忆体及其制造方法 | |
KR101052866B1 (ko) | 상변환 기억 소자 및 그의 제조방법 | |
CN105261701B (zh) | 制造相变化记忆体的方法 | |
US20070075434A1 (en) | Method for producing a PCM memory element and corresponding PCM memory element | |
KR20070079647A (ko) | 상변화 메모리 소자의 제조 방법 | |
CN105702858A (zh) | 相变化记忆体及其制造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20170628 Address after: No. 188 East Huaihe Road, Huaiyin District, Jiangsu, Huaian Applicant after: Jiangsu times all core storage technology Co.,Ltd. Applicant after: JIANGSU ADVANCED MEMORY SEMICONDUCTOR Co.,Ltd. Applicant after: BEING ADVANCED MEMORY TAIWAN LIMITED Address before: 315195 Zhejiang city of Ningbo province Yinzhou Industrial Park (New Yinzhou District Jiang Shan Zhen Zhang Yu Cun) Applicant before: NINGBO ADVANCED MEMORY TECHNOLOGY Corp. Applicant before: BEING ADVANCED MEMORY TAIWAN LIMITED |
|
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CP03 | Change of name, title or address | ||
CP03 | Change of name, title or address |
Address after: No. 601, Changjiang East Road, Huaiyin District, Huaian, Jiangsu Co-patentee after: JIANGSU ADVANCED MEMORY SEMICONDUCTOR Co.,Ltd. Patentee after: JIANGSU ADVANCED MEMORY TECHNOLOGY Co.,Ltd. Co-patentee after: BEING ADVANCED MEMORY TAIWAN LIMITED Address before: 223001 No. 188 Huaihe East Road, Huaiyin District, Huaian City, Jiangsu Province Co-patentee before: JIANGSU ADVANCED MEMORY SEMICONDUCTOR Co.,Ltd. Patentee before: Jiangsu times all core storage technology Co.,Ltd. Co-patentee before: BEING ADVANCED MEMORY TAIWAN LIMITED |
|
CP03 | Change of name, title or address | ||
CP03 | Change of name, title or address |
Address after: 802, unit 4, floor 8, building 2, yard 9, FengHao East Road, Haidian District, Beijing Patentee after: Beijing times full core storage technology Co.,Ltd. Patentee after: JIANGSU ADVANCED MEMORY SEMICONDUCTOR Co.,Ltd. Patentee after: BEING ADVANCED MEMORY TAIWAN LIMITED Address before: 223001 No. 601, Changjiang East Road, Huaiyin District, Huai'an City, Jiangsu Province Patentee before: JIANGSU ADVANCED MEMORY TECHNOLOGY Co.,Ltd. Patentee before: JIANGSU ADVANCED MEMORY SEMICONDUCTOR Co.,Ltd. Patentee before: BEING ADVANCED MEMORY TAIWAN LIMITED |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20220125 Address after: 802, unit 4, floor 8, building 2, yard 9, FengHao East Road, Haidian District, Beijing Patentee after: Beijing times full core storage technology Co.,Ltd. Address before: Room 802, unit 4, floor 8, building 2, yard 9, FengHao East Road, Haidian District, Beijing 100094 Patentee before: Beijing times full core storage technology Co.,Ltd. Patentee before: JIANGSU ADVANCED MEMORY SEMICONDUCTOR Co.,Ltd. Patentee before: BEING ADVANCED MEMORY TAIWAN LIMITED |