CN105785304A - Standard part for calibrating on-chip high-value resistor measurement system, and preparation method for standard part - Google Patents
Standard part for calibrating on-chip high-value resistor measurement system, and preparation method for standard part Download PDFInfo
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- CN105785304A CN105785304A CN201610307574.2A CN201610307574A CN105785304A CN 105785304 A CN105785304 A CN 105785304A CN 201610307574 A CN201610307574 A CN 201610307574A CN 105785304 A CN105785304 A CN 105785304A
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- metal electrode
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- value resistor
- high value
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R35/00—Testing or calibrating of apparatus covered by the other groups of this subclass
- G01R35/005—Calibrating; Standards or reference devices, e.g. voltage or resistance standards, "golden" references
- G01R35/007—Standards or reference devices, e.g. voltage or resistance standards, "golden references"
Abstract
The invention discloses a standard part for calibrating an on-chip high-value resistor measurement system, and a preparation method for the standard part, and relates to the technical field of metering. The standard part comprises a substrate, and boron ions are injected onto the substrate. The substrate with the boron ions is provided with a plurality of pairs of metal electrodes, wherein each pair of metal electrodes form an independent unit, and the heights and lengths of all metal electrodes on the same substrate are the same. The distances between each pair of metal electrodes of different independent units are equal, and the widths of the metal electrodes gradually increase or decrease from one end of the row and column of the same substrate. The boundary dimension of the substrate, the boundary dimension of the metal electrodes and the number of the metal electrodes are set according to a target to-be-calibrated target resistance value. The standard part is good in repeatability and long-time stability, can meet the metering calibration demand of the high-value resistor measurement system, and guarantees the accuracy and consistency of a measurement value.
Description
Technical field
The present invention relates to field of measuring techniques, specifically a kind of for calibrating the standard component and preparation method thereof measuring system at sheet high value resistor.
Background technology
Measuring system at sheet high value resistor can carry out measuring at sheet high value resistor, be usually used in the industry such as quasiconductor, microelectromechanical systems (MEMS), wafer, bare chip etc. are tested, whether the high value resistor investigating tested ad hoc structure meets design requirement.
The typical structure of system is measured as it is shown on figure 3, measured instrument, probe station and cable by high value resistor and constitute at sheet high value resistor.Wherein, probe station has for carrying tested pallet and in order to realize the probe system measured at sheet；High value resistor measuring instrument utensil has high value resistor to measure function；High value resistor is measured instrument and is coupled together with probe station by cable.
Whether the insulation characterisitic that high value resistor measurement is usually used in judging between product ad hoc structure meets product design requirement, and the accuracy that high value resistor is measured is significant to product test.
Test for the wafer of MEMS capacitance accelerometer product.Wafer test is requisite important step in the whole technological process of MEMS sensor product.Between this Xiang Qian road and postchannel process, after chip manufacturing process is fully completed, before encapsulation, the parameter of the MEMS chip on wafer is tested and examination one by one, be monitoring processing quality and the most important and the most direct test stage of yield rate.By MEMS wafer built-in testing, the chip being unsatisfactory for index request can be rejected on the one hand, it is to avoid it enters next working link.The encapsulation of MEMS and testing cost account for the 70% of totle drilling cost, if unscreened chip being direct plungeed into postchannel process can cause the significant wastage of cost；The control of technique is played critical directive function by test data on the other hand, the reference data providing important can be improved for the design of MEMS product and manufacturing process, thus being effectively improved production efficiency, shortening the lead time, saving valuable time, manpower and resources for research.Typical capacitance accelerometer structure as shown in Figure 4, Figure 5, for comb structure.Fixing interdigital change that the change of extraneous non electrical quantity can convert capacitance interdigital with activity, for the measurement of the physical quantitys such as acceleration.Its a, c point-to-point transmission and b, c point-to-point transmission answer mutual insulating, if insulating properties are unsatisfactory for requirement, it is possible to cause product overheated, and can be short-circuited time serious causes product to burn.Therefore, measure the accuracy of system at sheet high value resistor and product quality is had very important meaning.
In view of the accuracy significance to product quality measuring system at sheet high value resistor, it is necessary to such system is carried out measurement and calibration, it is achieved tracing to the source of sheet high value resistor value, it is ensured that value accurately, consistent.
Prior art scenario is as follows:
The technological means being disclosed and product all cannot realize the measurement and calibration measuring system at sheet high value resistor, way common at present is by system partition metering or uses standard sample to be verified, but both means all cannot realize parameter traces to the source, reach the purpose that value is accurate, consistent, be specifically described separately below.
One, partition metering, is dismantle each ingredient measuring system at sheet high value resistor to measure respectively.Common recognition according to metering field, overall metering is better than disassembling metering, and this is that simultaneously because measure system at sheet high value resistor to belong to precision equipment, structure is complicated, repeatedly disassembles easy influential system performance owing to the duty of system is pressed close in entirety metering more.On the other hand, published technological means is not currently also had individually probe station can be carried out measurement and calibration.
Two, use standard sample to be verified, be choose the good product of stability as standard sample, be regularly used in sheet high value resistor and measure systematic survey standard sample, to verify the stability of system.Further, it is also possible to utilize standard sample to contrast between sheet high value resistor measurement system in multiple stage, confirmatory measurement result concordance.But, originating due to the high value resistor of product is often insulation resistance, its design object does not account for stability and the repeatability of resistance, cause that the measurement reproducibility of the resistance of standard sample is often poor, and easily by environmental influence, long-time stability are also unable to reach the level that measurement and calibration field requires.
To sum up, existing public technology cannot solve to measure the calibration problem of system at sheet high value resistor.
Summary of the invention
The technical problem to be solved is to provide a kind of for calibrating the standard component and preparation method thereof measuring system at sheet high value resistor, this standard component has good repeatability and long-time stability, high value resistor can be met and measure the needs of system meters calibration, realize measuring tracing to the source of system at sheet high value resistor, it is ensured that value is precisely consistent.
For solving above-mentioned technical problem, the technical solution used in the present invention is: a kind of for calibrating the standard component measuring system at sheet high value resistor, including substrate, substrate injects boron ion, the substrate injecting boron ion is provided with some metal electrodes to being arranged in array, every pair of metal electrodes constitutes a separate unit, the height of all of metal electrode on the same substrate is identical with length, it is provided with spacing between two electrodes of pair of metal electrodes, the spacing between two electrodes of metal electrode in different separate units is all equal, the width of each pair of metal electrode all differs, the width of metal electrode is to start from one end of the row and column of same substrate to be increasing or decreasing arrangement；Wherein, the overall dimensions of substrate and the overall dimensions of metal electrode and number are calibrated as required target resistance and determine.
Further technical scheme, substrate adopts GaAs material to make.
Further technical scheme, metal electrode adopts Au to make.
Further technical scheme, is arranged with Jie Yin district outside every pair of metal electrode.
Further technical scheme, height and the material in Jie Yin district are identical with metal electrode.
Further technical scheme, when target resistance is 1G Ω, the height of all metal electrodes is 200 μm and remains unchanged, and the spacing between two electrodes of every pair of metal electrode 4 μm remains unchanged, and metal electrode width is alternation between 10 μm～400 μm.
The preparation method of a kind of standard component for calibrating in sheet high value resistor measurement system, comprises the following steps:
A, employing GaAs material make substrate；
B, on substrate inject boron ion；
C, inject boron ion substrate on generate the metal electrode being arranged in array；
D, with scaling system, the resistance value in each unit module is calibrated, obtain the standard electric resistance that can trace to the source；
E, repeated measure each unit module resistance, select with need calibration desired value closest to resistance as standard component.
Adopt and have the beneficial effects that produced by technique scheme: the present invention utilizes semiconductor technology, it is produced on the high value resistor standard component of sheet form, the target resistance that resistance can be measured as required is designed, there are good repeatability and long-time stability, high value resistor can be met and measure the needs of system meters calibration, realize tracing to the source at sheet high value resistor, it is ensured that value is accurately, unanimously.
Accompanying drawing explanation
Fig. 1 is the structural representation of one embodiment of the invention；
Fig. 2 is the structural representation of pair of metal electrodes of the present invention；
Fig. 3 is the typical structure principle chart measuring system at sheet high value resistor；
Fig. 4 is the structure chart of typical capacitance accelerometer；
Fig. 5 is Fig. 4 structure chart when accelerating；
In figure: 1, substrate；2, metal electrode；3, Jie Yin district；4, fixing tooth；5, beam is supported；6, mass.
Detailed description of the invention
Below in conjunction with the drawings and specific embodiments, the present invention is further detailed explanation.
What the present invention proposed is used for calibrating the standard component measuring system at sheet high value resistor, standard high value resistor can be provided, this resistance can be traceable to high value resistor National primary standard, for measuring the measurement and calibration of system at sheet high value resistor, realize tracing to the source at sheet high value resistor, it is ensured that the measurement result that sheet high value resistor measures system is accurate, consistent.
As one embodiment of the present of invention, be given below a kind of target resistance 1G Ω in sheet high value resistor standard component scheme, as shown in Figure 1 and Figure 2.
Substrate 1 adopts GaAs material to make, and by injecting boron ion on GaAs substrate 1, destroys the original lattice of GaAs, thus being obviously enhanced the insulating properties of material, reduces leakage current, as high dielectric substrate 1.Then in the high dielectric substrate 1 prepared, adopting Au to make metal electrode 2, wherein, every pair of metal electrode constitutes a separate unit, it is to avoid different from the impact between metal electrode；Metal electrode 2 is highly 200 μm and remains unchanged, and for remain unchanged from 4 μm between metal electrode 2, metal electrode 2 width changes between 10 μm～400 μm.Wherein it is arranged with Jie Yin district 3 in the outside of metal electrode 2, the material in Jie Yin district 3 is identical with metal electrode, it is integrally formed with metal electrode 2, the probe acting as the system needing calibration in Jie Yin district 3 provides the region inserted, when namely measuring, probe is to insert and Jie Yin district 3, therefore, the region drawing insertion is connect for making probe have, when metal electrode width is only small, the width in Jie Yin district is more than the width of metal electrode, when the width of metal electrode is bigger, Jie Yin district is identical with the width of metal electrode, the width in overall Shi Jieyin district is the trend of increasing or decreasing from one end of the row or column of unit module, the trend that the trend of its change changes with metal electrode is identical.
Wherein, as in figure 2 it is shown, herein, width refers to the length that metal electrode is horizontal, is labeled as d in figure；Spacing between metal electrode is the e in figure；The length of metal electrode is the g in figure.
Wherein, measure system at sheet high value resistor to refer to by probe station, measure instrument and connect what cable etc. was constituted, it is possible to be implemented in the measurement system of the high value resistor parameter measurement of sheet form.Little at the measured resistance volume of sheet, its electrode size is in micron dimension, and conventional interface shape (such as BNC, Tri-axial) and measured material are all inapplicable, measures at sheet and completes by probe station.Probe station has microprobe, and its tip dimensions, at micron to sub-micrometer scale, adopts the mode of lower press contacts to be connected with the electrode of the measured resistance in sheet form thus implementing to measure.
Standard component uses scaling system that the resistance value between the pair of metal electrodes in each separate unit is calibrated after completing, and obtains the standard electric resistance that can trace to the source, then select wherein resistance and 1G Ω closest to use as standard component.
In the present embodiment, the resistance selecting resistance and 1G Ω close is calibrated, and scaled values is 1.001G Ω, and the standard deviation that 6 times are measured is 0.001998G Ω, and repeatability is good, it is possible to meet the needs at sheet height value calibration.
The present invention comprises the following steps:
A, employing GaAs material make substrate 1；
B, on substrate 1 injection boron ion；
C, inject boron ion substrate 1 on generate the metal electrode 2 being arranged in array；
D, with scaling system, the resistance value in each unit module is calibrated, obtain the standard electric resistance that can trace to the source；
E, repeated measure each unit module resistance, select with need calibration desired value closest to resistance as standard component.
The main points of invention are as follows:
1) the semi-conducting material manufacturing substrate of high resistivity is adopted；
2) adopt ion implantation technique, destroy the lattice of backing material, improve the resistivity of substrate further；
3) adopt sputtering technology, at the various sizes of metal electrode of Grown, obtain different resistance by the size and relative position controlling electrode.
This standard component can provide the standard electric resistance with traceability, resistance can need to be designed according to client, can being such as 10M Ω, 100M Ω, 2G Ω etc., the target resistance for different customer requirements be different, and metal electrode height therein, width and spacing all need to adjust.
This standard component adopts high dielectric substrate so that resistance has good repeatability and long-time stability.
Claims (7)
1. one kind is used for calibrating the standard component measuring system at sheet high value resistor, it is characterized in that, including substrate (1), at substrate (1) upper injection boron ion, the substrate (1) injecting boron ion is provided with some to the metal electrode being arranged in array (2), every pair of metal electrodes (2) constitutes a separate unit, the height of all of metal electrode (2) on same substrate (1) is identical with length, it is provided with spacing between two electrodes of pair of metal electrodes, the spacing between (2) two electrodes of metal electrode in different separate units is all equal, the width of each pair of metal electrode all differs, the width of metal electrode (2) is to start from one end of the row and column of same substrate (1) to be increasing or decreasing arrangement；Wherein, the overall dimensions of substrate (1) and the overall dimensions of metal electrode (2) and number are calibrated as required target resistance and determine.
2. according to claim 1 for calibrating the standard component measuring system at sheet high value resistor, it is characterised in that substrate (1) adopts GaAs material to make.
3. according to claim 1 for calibrating the standard component measuring system at sheet high value resistor, it is characterised in that metal electrode (2) adopts Au to make.
4. according to claim 1 for calibrating the standard component measuring system at sheet high value resistor, it is characterised in that to be arranged with Jie Yin district (3) in every pair of metal electrode (2) outside.
5. according to claim 1 for calibrating the standard component measuring system at sheet high value resistor, it is characterised in that the height of Jie Yin district (3) and material and metal electrode (2) are identical.
6. according to claim 1 for calibrating the standard component measuring system at sheet high value resistor, it is characterized in that, when target resistance is 1G Ω, the height of metal electrode (2) is 200 μm and remains unchanged, spacing between two electrodes of every pair of metal electrode (2) 4 μm remains unchanged, and metal electrode (2) width is alternation between 10 μm～400 μm.
7. the preparation method for calibrating the standard component in sheet high value resistor measurement system, comprises the following steps:
A, employing GaAs material make substrate (1)；
B, inject boron ion substrate (1) is upper；
C, inject boron ion substrate (1) above generate the metal electrode (2) being arranged in array；
D, with scaling system, the resistance value in each unit module is calibrated, obtain the standard electric resistance that can trace to the source；
E, repeated measure each unit module resistance, select with need calibration desired value closest to resistance as standard component.
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| CN201610307574.2A CN105785304B (en) | 2016-05-11 | 2016-05-11 | For calibrating the standard component in piece high value resistor measuring system |
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| CN201610307574.2A CN105785304B (en) | 2016-05-11 | 2016-05-11 | For calibrating the standard component in piece high value resistor measuring system |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106526322A (en) * | 2016-10-27 | 2017-03-22 | 中国电子科技集团公司第十三研究所 | Traceable on-sheet high-value resistor measuring system and tracing method thereof |
| CN109449135A (en) * | 2018-09-29 | 2019-03-08 | 全球能源互联网研究院有限公司 | The encapsulating structure of semiconductor power device and the electrode of encapsulating structure |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030117147A1 (en) * | 2001-12-22 | 2003-06-26 | Samsung Electronics Co., Ltd. | Circuit and method for calibrating resistors for active termination resistance, and memory chip having the circuit |
| JP2006046991A (en) * | 2004-08-02 | 2006-02-16 | Micronics Japan Co Ltd | Device and method for trimming calibration substrate |
| US20100017669A1 (en) * | 2006-11-30 | 2010-01-21 | Murata Manufacturing Co., Ltd. | Method for correcting high-frequency characteristic error of electronic component |
| CN101657912A (en) * | 2007-04-16 | 2010-02-24 | 罗姆股份有限公司 | Semiconductor light-emitting device and method for manufacturing the same |
| CN203909230U (en) * | 2014-06-19 | 2014-10-29 | 高新华 | Semiconductor chip test device |
| CN104502878A (en) * | 2014-12-26 | 2015-04-08 | 中国电子科技集团公司第十三研究所 | Microwave GaAs substrate on-chip S parameter microstrip line TRL (transistor resistor logic) calibrating member |
| CN205608168U (en) * | 2016-05-11 | 2016-09-28 | 中国电子科技集团公司第十三研究所 | A standard component for calibrating in high worth resistance measurement system of piece |
-
2016
- 2016-05-11 CN CN201610307574.2A patent/CN105785304B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030117147A1 (en) * | 2001-12-22 | 2003-06-26 | Samsung Electronics Co., Ltd. | Circuit and method for calibrating resistors for active termination resistance, and memory chip having the circuit |
| JP2006046991A (en) * | 2004-08-02 | 2006-02-16 | Micronics Japan Co Ltd | Device and method for trimming calibration substrate |
| US20100017669A1 (en) * | 2006-11-30 | 2010-01-21 | Murata Manufacturing Co., Ltd. | Method for correcting high-frequency characteristic error of electronic component |
| CN101657912A (en) * | 2007-04-16 | 2010-02-24 | 罗姆股份有限公司 | Semiconductor light-emitting device and method for manufacturing the same |
| CN203909230U (en) * | 2014-06-19 | 2014-10-29 | 高新华 | Semiconductor chip test device |
| CN104502878A (en) * | 2014-12-26 | 2015-04-08 | 中国电子科技集团公司第十三研究所 | Microwave GaAs substrate on-chip S parameter microstrip line TRL (transistor resistor logic) calibrating member |
| CN205608168U (en) * | 2016-05-11 | 2016-09-28 | 中国电子科技集团公司第十三研究所 | A standard component for calibrating in high worth resistance measurement system of piece |
Non-Patent Citations (1)
| Title |
|---|
| 乔玉娥等: "MEMS晶圆片测试系统绝缘电阻参数校准技术研究", 《2015国际无线电&电学计量与测试学术交流会》 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106526322A (en) * | 2016-10-27 | 2017-03-22 | 中国电子科技集团公司第十三研究所 | Traceable on-sheet high-value resistor measuring system and tracing method thereof |
| CN106526322B (en) * | 2016-10-27 | 2019-04-02 | 中国电子科技集团公司第十三研究所 | Can trace to the source in piece high value resistor measuring system and its source tracing method |
| CN109449135A (en) * | 2018-09-29 | 2019-03-08 | 全球能源互联网研究院有限公司 | The encapsulating structure of semiconductor power device and the electrode of encapsulating structure |
| CN109449135B (en) * | 2018-09-29 | 2020-09-29 | 全球能源互联网研究院有限公司 | Packaging structure of semiconductor power device and electrode of packaging structure |
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