CN109060759B - Semiconductor film thermal conductivity analysis method based on Raman spectrum testing technology - Google Patents
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/65—Raman scattering
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N25/00—Investigating or analyzing materials by the use of thermal means
- G01N25/20—Investigating or analyzing materials by the use of thermal means by investigating the development of heat, i.e. calorimetry, e.g. by measuring specific heat, by measuring thermal conductivity
Abstract
The invention discloses a semiconductor film thermal conductivity analysis method based on a Raman spectrum testing technology, which comprises the following steps: designing and preparing a micro-bridge structure of a film sample to be detected; calibrating the Raman spectrum peak of the film material along with the temperature shift coefficient; calculating the temperature distribution of the area to be measured of the thin film microbridge; and (5) extracting the thermal conductivity of the film by utilizing simulation fitting analysis. The invention solves the problem of accurate characterization of the thermal conductivity of the semiconductor film material with specific thickness, improves the test precision, reduces the test cost, meets the research requirement of the semiconductor device on the thermal performance of the film material with the thickness of between hundred nanometers and ten micrometers, and has great guiding significance for promoting the technical development of the thermal management of the device.
Description
Technical Field
The invention relates to a semiconductor film testing technology, in particular to a semiconductor film thermal conductivity analysis method based on a Raman spectrum testing technology.
Background
The trend of the development of semiconductors represented by gallium nitride and gallium arsenide towards high power density is limited by the problem of the increase of the junction temperature of the device caused by the self-heat accumulation effect, and the performance and the reliability of the device are seriously reduced. Therefore, the thermal management of the device has become an important research direction in the research and development and application fields of high-power devices, and the research on the thermal performance of the material of the device is carried out throughout the whole process of the thermal design of the device, so that the research and development of the thermal management are important to evaluate and guide. At present, the heat management technology of the semiconductor device is developed from the traditional system level to the packaging level and the chip level, and the heat management of the system level and the packaging level is very perfect due to the macroscopic size and the thermal characteristic test evaluation technology of the material designed by the heat management technology; the micro-nano size of the chip structure is related to chip-level thermal management, the self thin film material is between hundreds of microns and several microns, the thermal property of the thin film material is seriously influenced by the size dimension, and the preparation of a thin film sample is difficult, so that the characterization technology of the thin film material does not have a uniform standard.
At present, the testing method applied to the semiconductor film mostly adopts an electrical method and a laser heat reflection method. The electric method comprises a thermocouple test method based on a microbridge structure and a 3 omega method, wherein the precision of the thermocouple test method of the microbridge structure is influenced by the temperature change precision of a thermocouple, and the test error is large; the 3 omega method is limited by a heating frequency range, has large heat penetration depth and is not suitable for testing thin film materials with the thickness of less than 10 mu m. The laser heat reflection method has the problems that the accuracy of the test result and the final fitting result of the surface of a sample to be tested is affected due to the fact that a heat absorbing layer needs to be evaporated on the surface of the sample to be tested, a test bench needs to be built by itself, the test is complex, and the cost is high. Therefore, a high-precision and economic thin film thermal conductivity test analysis method is urgently needed at present, the research requirement of a semiconductor device on the thermal performance of a thin film material with the thickness of hundreds of nanometers to several micrometers is met, and great guiding significance is provided for the technical development of improving the thermal management of the device.
Disclosure of Invention
The invention aims to provide a semiconductor film thermal conductivity analysis method based on a Raman spectrum testing technology, which solves the problems of insufficient analysis precision and poor economy of the existing testing technology for semiconductor micro-nano film thermal conductivity characterization, and meets the combination of Raman testing and simulation fitting analysis through the design of a micro-bridge thermal structure containing strip electrodes, thereby realizing the precise characterization of the micro-nano film thermal conductivity.
The technical scheme for realizing the purpose of the invention is as follows: a semiconductor thin film thermal conductivity analysis method based on a Raman spectrum testing technology comprises the following steps:
step 1, designing a micro-bridge structure of a test sample test area of a film to be tested, and preparing a sample based on photoetching, evaporation and plasma etching technologies;
step 2, performing Raman spectrum test on the thin film material to be tested at a specific temperature, and calibrating a peak value-temperature offset coefficient;
step 3, applying specific power to the surface electrode of the film to be tested, and testing the offset of the Raman spectrum peak value of the central area of the microbridge structure;
step 4, calculating the temperature distribution of the central area of the microbridge structure according to the calibrated peak value-temperature deviation coefficient;
and 5, simulating the heat distribution of the heat transfer of the film to be tested, and finally fitting and extracting the heat conductivity of the film by combining the tested temperature distribution.
Further, the design method of the microbridge structure in the step 1 is as follows:
firstly, designing a linear heat source, namely a strip electrode, on a film of a region to be detected, wherein the electrode width of a micro-bridge region of the strip electrode is 3-5 um, and the length of the strip electrode is consistent with that of an etching region;
secondly, circuit connection areas are designed at two ends of the linear heat source to meet the interconnection with an external circuit;
finally, an etched region of the microbridge structure is designed on the substrate, with an aspect ratio ranging from 4:1 to 5: 1.
Furthermore, the thickness of the electrode is between 100nm and 200 nm.
Furthermore, the length of the etching area is 500-1000 um.
Furthermore, in the preparation process of the sample, the electrode adopts the evaporation process of gold, aluminum or platinum, and the substrate etching area adopts the plasma etching process.
Further, step 2, calibrating the Raman spectrum peak of the film material to be measured along with the temperature shift coefficient by using a Raman method:
K＝Δω/ΔT
wherein K is a peak value-temperature deviation coefficient, delta omega is a peak value deviation amount of the film material, and delta T is a temperature deviation difference amount; the temperature range is 25-200 ℃, and the spectrum peak value at 25 ℃ is taken as a reference.
Further, step 3 specifically comprises:
applying specific power to a surface electrode of a film to be tested, testing the offset of a Raman spectrum peak value of a central area of a microbridge structure, wherein the applied power range is 0.2-1W, Raman testing is adopted to test the offset of the Raman spectrum peak value of a material in the specific power range, the testing area is in the normal direction of the electrode in the central area of the microbridge, and the testing interval is 2-20 um; the central area of the micro-bridge refers to the normal direction of the electrode at the positive center of the length direction of the micro-bridge structure.
Further, step 4 specifically includes:
and calculating the temperature distribution of the central area of the film on the surface of the microbridge according to the calibrated peak value-temperature deviation coefficient K and the Raman peak value in the normal direction of the electrode obtained by testing.
Further, step 5 specifically comprises:
firstly, establishing a three-dimensional simulation model for testing heat transfer of a sample structure, inputting boundary conditions of the model according to test conditions, setting the heat conductivity of the film as a variable, carrying out simulation calculation on the temperature distribution of the central region electrode in the normal direction, fitting a simulation temperature distribution curve of the central region electrode with a test result, and finally obtaining the heat conductivity value of the film when the simulation result is consistent with the test result in fitting.
Further, a three-dimensional simulation model of heat transfer of a test sample structure is established, the heat conductivity of the film to be tested is set as a variable, the range of the heat conductivity is A-B, wherein A is 70-75% of the theoretical value of the heat conductivity of the film, B is the theoretical value of the heat conductivity of the film, the increment is 1W/m.K, the temperature distribution in the normal direction of the electrode in the central area of the film is simulated and calculated and is fitted with the test result, the heat conductivity completely covers the test result when the heat conductivity is between C and D, when the variable value is E and the test result have the maximum fit, the heat conductivity of the GaN film is E, and the error value is +/-max (| D-E |, | C-E.
Compared with the prior art, the invention has the following remarkable advantages: (1) by skillful and reasonable design of a microbridge structure containing a strip electrode, the representation of the heat transmission characteristic of the film meeting Raman tests and simulation fitting is constructed, and the analysis of the heat conductivity of the micro-nano semiconductor film is realized; (2) the thermal conductivity analysis technology adopts Raman spectrum to calibrate temperature, has high spatial resolution, enables the temperature distribution of the characterized film micro-bridge area to be more accurate, and enables the thermal conductivity of the film extracted by fitting to have higher precision; (3) the analysis of the thermal conductivity of the film has requirements on the thickness of the material, has no requirements on the type of the material, and has wide application range.
Drawings
FIG. 1 is a flow chart of a method for analyzing thermal conductivity of a semiconductor thin film based on a Raman spectrum testing technology.
Fig. 2 is a schematic diagram of the structure and dimensions of a test specimen according to the present invention.
Fig. 3 is a schematic diagram of the thermal conductivity fitting extraction of a semiconductor thin film according to the present invention.
Detailed Description
As shown in fig. 1, a method for analyzing thermal conductivity of a semiconductor thin film based on a raman spectroscopy test technique includes the following steps:
(1) designing a micro-bridge structure of a test sample test area of the film to be tested, and preparing a sample based on photoetching, evaporation and plasma etching technologies. The method comprises the following steps of meeting the characterization requirements of film heat transfer characteristics of Raman tests and simulation fitting in design, firstly designing a linear heat source, namely a strip electrode, on a film of a region to be tested, wherein as shown in figure 2, the electrode width of a micro-bridge region is 3-5 um, the thickness is 100-200 nm, and the length is consistent with the length of an etching region; secondly, circuit connection areas are designed at two ends of the linear heat source to meet the interconnection with an external circuit; and finally, designing an etching area of the micro-bridge structure on the substrate, wherein the length-width ratio (L: W) of the etching area is in a range of 4:1 to 5:1, and the length L of the etching area is 500-1000 um. In the preparation process of the sample, the electrode adopts the evaporation process of gold, aluminum and platinum metals, and the substrate etching area adopts the plasma etching process.
(2) And carrying out Raman spectrum test on the film material to be tested at a specific temperature, and calibrating the peak value-temperature offset coefficient. Utilizing the shift of Raman spectrum peak value of film material in specific temperature range according to the formula: and calculating the peak value-temperature deviation coefficient K, wherein the temperature range is generally 25-200 ℃, and the sampling number is not less than 4 on the basis of the spectrum peak value at 25 ℃.
(3) And applying specific power to the surface electrode of the film to be tested, and testing the offset of the Raman spectrum peak value of the central area of the microbridge structure. The applied power is a specific value, the range is 0.2-1W, the Raman test is adopted to test the peak value offset of the Raman spectrum of the material in the specific power range, the test area is the normal direction of the electrode in the central area of the microbridge (only the test in a single direction), and the test interval is 2-20 um.
(4) According to the calibrated peak value-temperature deviation coefficient K, the temperature distribution of the central area of the film on the surface of the microbridge is calculated by combining the Raman peak value in the normal direction of the electrode obtained by the test, as shown in figure 3.
(5) And (4) performing thermal distribution simulation of the heat transfer of the film to be tested, and finally fitting and extracting the thermal conductivity of the film by combining the tested temperature distribution. Firstly, a three-dimensional simulation model for testing the heat transfer of a sample structure is established, the boundary conditions of the model are input according to the test conditions, the heat conductivity of the film is set as a variable, the temperature distribution in the normal direction of the electrode in the central area is simulated and calculated, the simulated temperature distribution curve is fitted with the test result, if the heat conductivity is a-c in the graph 3, the test result is completely covered, and if the heat conductivity is b, the maximum fit is formed between the simulated temperature distribution curve and the test result, so that the variable value b is the heat conductivity value of the film.
The present invention will be described in detail with reference to examples.
Examples
Aiming at the thermal conductivity analysis of the semiconductor gallium nitride film, the thickness of the GaN film is 1.2um, and the substrate is made of SiC material.
Designing a micro-bridge structure of a sample test area of a film to be tested, and preparing a sample based on photoetching, evaporation and plasma etching technologies: designing a strip-shaped electrode on the GaN film of the region to be detected, wherein the width is 5um, the thickness is 100nm, and the length is 500 um; the size of the circuit connection area designed at the two ends of the linear heat source is 150um to 150um, and the thickness of the circuit connection area is consistent with that of the electrode; the etching area of the micro-bridge structure has the length and width of 500um to 120 um. The electrode of the sample is finished by evaporation of gold, and the SiC substrate is etched by plasma etching.
② carrying out Raman spectrum test on the film material to be tested at specific temperature to carry out peakValue-temperature offset coefficient calibration: the GaN film temperature was set to 25 ℃, 50 ℃, 100 ℃, 150 ℃ and 200 ℃, and the spectral peak was measured by Raman, according to the formula: k is Δ ω/Δ T, and the peak-temperature shift coefficient K is calculated to be 0.012cm-1/K。
Thirdly, specific power is applied to the surface electrode of the film to be tested, and the offset of the Raman spectrum peak value of the central area of the microbridge structure is tested: the power applied to the electrode on the GaN film is 0.29W, the substrate temperature is 25 ℃, and the peak value offset of the GaN film spectrum in the normal direction of the electrode in the central region of the microbridge is measured by Raman, the measurement distance is 10um, and the measurement distance is 1.597cm-1、1.325cm-1、1.132cm-1、0.751cm-1、0.484cm-1、0.197cm-1。
And fourthly, according to the calibrated peak value-temperature deviation coefficient K and in combination with the Raman peak value in the normal direction of the electrode obtained by testing, calculating the temperature distribution in the normal direction of the electrode in the central area of the film on the surface of the microbridge, wherein the temperature distribution in the normal direction of the electrode is 158.1 ℃, 135.4 ℃, 119.3 ℃, 87.6 ℃, 65.3 ℃ and 41.4 ℃.
Fifthly, simulating the heat distribution of the heat transfer of the film to be tested, and finally fitting and extracting the heat conductivity of the film by combining the tested temperature distribution: establishing a three-dimensional simulation model of heat transfer of a test sample structure, setting the heat source of the model to be 0.29W, setting the substrate temperature to be 25 ℃, setting the heat conductivity of the GaN film as a variable with the range of 110-149W/m.K and the increment of 1W/m.K, carrying out simulation calculation on the temperature distribution of the central area electrode in the normal direction and fitting results of the test, wherein the fitting results show that the heat conductivity covers all test values when the value of the variable is 125-129W/m.K, and the value of the variable is 126W/m.K and the maximum fitting is carried out on the test values, so that the heat conductivity of the GaN film is 126W/m.K, and the error value is +/-3W/m.K.
Claims (7)
1. A semiconductor film thermal conductivity analysis method based on a Raman spectrum testing technology is characterized by comprising the following steps:
step 1, designing a micro-bridge structure of a test sample test area of a film to be tested, and preparing a sample based on photoetching, evaporation and plasma etching technologies;
step 2, performing Raman spectrum test on the thin film material to be tested at a specific temperature, and calibrating a peak value-temperature offset coefficient;
step 3, applying specific power to the surface electrode of the film to be tested, and testing the offset of the Raman spectrum peak value of the central area of the microbridge structure;
step 4, according to the calibrated peak value-temperature deviation coefficient K, combining the Raman peak value in the normal direction of the electrode obtained by testing, and calculating the temperature distribution of the central area of the film on the surface of the microbridge;
step 5, firstly, establishing a three-dimensional simulation model for testing the heat transfer of the sample structure, inputting boundary conditions of the model according to test conditions, setting the heat conductivity of the film as a variable, carrying out simulation calculation on the temperature distribution of the central region electrode in the normal direction, fitting the simulation temperature distribution curve of the film with the test result, and obtaining the heat conductivity value of the film when the final simulation result is consistent with the fitting of the test result; the method specifically comprises the following steps:
establishing a three-dimensional simulation model for testing heat transfer of a sample structure, setting the heat conductivity of the film to be tested as a variable, wherein the range of the heat conductivity is A-B, A is 70-75% of the theoretical value of the heat conductivity of the film, B is the theoretical value of the heat conductivity of the film, the increment is 1W/m.K, simulating and calculating the temperature distribution of the central area electrode in the normal direction and fitting the test result, the heat conductivity completely covers the test result when the heat conductivity is between C and D, and when the variable value is E and the test result have the maximum fitting, the heat conductivity of the film is E, and the error value is +/-max (| D-E |, | C-E |).
2. The method for analyzing the thermal conductivity of the semiconductor thin film based on the Raman spectrum testing technology as claimed in claim 1, wherein the design method of the micro-bridge structure in the step 1 is as follows:
firstly, designing a linear heat source, namely a strip electrode, on a film of a region to be detected, wherein the width of the electrode in a micro-bridge region is 3-5 um, and the length of the electrode is consistent with that of an etching region;
secondly, designing circuit connection areas at two ends of the linear heat source for being interconnected with an external circuit;
finally, an etched region of the microbridge structure is designed on the substrate, with an aspect ratio ranging from 4:1 to 5: 1.
3. The method for analyzing the thermal conductivity of the semiconductor thin film based on the Raman spectroscopy testing technology as claimed in claim 2, wherein the thickness of the electrode is between 100nm and 200 nm.
4. The method for analyzing the thermal conductivity of the semiconductor thin film based on the Raman spectrum testing technology as recited in claim 2, wherein the length of the etching region is between 500 and 1000 um.
5. The method for analyzing the thermal conductivity of a semiconductor film based on the Raman spectroscopy testing technology as claimed in claim 2, wherein in the preparation process of the sample, the electrode adopts an evaporation process of gold, aluminum or platinum, and the substrate etching area adopts a plasma etching process.
6. The method for analyzing the thermal conductivity of the semiconductor film based on the Raman spectrum testing technology as claimed in claim 1, wherein the step 2 utilizes a Raman method to calibrate the Raman spectrum peak of the film material to be tested along with the temperature shift coefficient:
K＝Δω/ΔT
wherein K is a peak value-temperature deviation coefficient, delta omega is a peak value deviation amount of the film material, and delta T is a temperature deviation difference amount; the temperature range is 25-200 ℃, and the spectrum peak value at 25 ℃ is taken as a reference.
7. The method for analyzing the thermal conductivity of the semiconductor thin film based on the Raman spectroscopy testing technology as claimed in claim 1, wherein the step 3 is specifically as follows:
applying specific power to a surface electrode of a film to be tested, testing the offset of a Raman spectrum peak value of a central area of a microbridge structure, wherein the applied power range is 0.2-1W, a testing area is in the normal direction of the electrode of the central area of the microbridge, and the testing interval is 2-20 um; the central area of the micro-bridge refers to the normal direction of the electrode at the positive center of the length direction of the micro-bridge structure.
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| CN110346407B (en) * | 2019-06-20 | 2021-08-17 | 杭州电子科技大学 | Heat conductivity test structure suitable for nanometer thickness film material |
| CN111103318A (en) * | 2019-12-11 | 2020-05-05 | 东莞烯事达新材料有限公司 | Method and system for testing thermal conductivity of low-dimensional material |
| CN111693510B (en) * | 2020-06-23 | 2023-07-11 | 安徽大学 | Method for measuring thermal conductivity of two-dimensional layered material based on temperature-dependent Raman spectrum |
| CN115825152B (en) * | 2023-01-31 | 2023-06-16 | 南京理工大学 | Structure and method for measuring thermal conductivity of thin film under micro-nano scale |
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