CN107064213A - A kind of device for measuring film coefficient of heat transfer - Google Patents

A kind of device for measuring film coefficient of heat transfer Download PDF

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Publication number
CN107064213A
CN107064213A CN201710387367.7A CN201710387367A CN107064213A CN 107064213 A CN107064213 A CN 107064213A CN 201710387367 A CN201710387367 A CN 201710387367A CN 107064213 A CN107064213 A CN 107064213A
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film
substrate
measured
open
work
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CN107064213B (en
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赵永建
方晓华
张向平
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Jinhua Polytechnic
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Jinhua Polytechnic
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N25/00Investigating or analyzing materials by the use of thermal means
    • G01N25/20Investigating or analyzing materials by the use of thermal means by investigating the development of heat, i.e. calorimetry, e.g. by measuring specific heat, by measuring thermal conductivity
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00Radiation pyrometry, e.g. infrared or optical thermometry
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/48Thermography; Techniques using wholly visual means
    • G01J5/485Temperature profile
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J2005/0077Imaging

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Analytical Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analyzing Materials Using Thermal Means (AREA)
  • Length Measuring Devices By Optical Means (AREA)

Abstract

The present invention relates to Material Field, a kind of device for measuring film coefficient of heat transfer includes substrate, film to be measured, displacement platform, photodiode, visible light source, thermal camera, open-work, computer, substrate is made of copper and is located at specimen holder, film to be measured is located above substrate, on the downside of photodiode connection displacement platform, thermal camera is fixed on directly over substrate and higher than displacement platform, visible light source irradiation upwards below substrate, film and substrate to be measured produce hot-fluid after absorbing luminous energy, by to film temperature increment, light energy density, film absorptivity, the calculating of the parameters such as film thickness can obtain film coefficient of heat transfer;Substrate has through the consistent some open-works of the shape of upper and lower surface, substrate can be used as passage of heat, so that quickly waste heat transmission to be walked, so that film to be measured produces thermograde, substrate can reflect most of incident light as photomask again, under the irradiation of visible light source highest light intensity, the rising of underlayer temperature is within 1K.

Description

A kind of device for measuring film coefficient of heat transfer
Technical field
The present invention relates to material character characterization technique field, it is particularly a kind of there is substrate with holes, can be to definitely temperature The requirement reduction of the measurement accuracy of degree, a kind of device of measurement film coefficient of heat transfer of simplified experimentation.
Background technology
The method of existing measurement film coefficient of heat transfer includes Raman frequency shift method, optical pumping-Detection Techniques etc., and its is common Have the disadvantage that the calibration process before experiment is excessively complicated;Infrared thermal imaging technique has the advantages that measuring speed is fast, but uses infrared Thermal imaging determines usually used angstrom of Gus's special bright method during thermal conductivity factor in pellicular front, and it has the disadvantage to light area on sample The positioning accuracy request in domain is higher, that is, needs to focus on laser beam, so as to can increase the risk of specimen breakdown.A kind of measurement is thin The device of film thermal conductivity factor can solve this problem.
The content of the invention
In order to solve the above problems, the present invention is the infrared thermal imaging device for measuring thermal conductivity factor in the face of film, Film to be measured is heated by visible ray, and uses substrate with holes as thermal trough, to cause film to be measured to produce steady temperature Gradient.
The technical solution adopted in the present invention is:
A kind of device for measuring film coefficient of heat transfer mainly includes substrate, film to be measured, displacement platform, the pole of photoelectricity two Pipe, visible light source, thermal camera, open-work, computer, the substrate are located on specimen holder, and specimen holder can be according to experiment need Remove, the substrate is made of copper, the film to be measured is located above the substrate, the photodiode connection institute rheme On the downside of moving stage, the displacement platform can a certain height above the film to be measured move in plane, the visible ray Source is located at below the substrate, and the thermal camera is fixed on directly over the substrate and higher than the displacement platform, it is described can See that light source produces hot-fluid below the substrate after irradiation upwards, the light absorbing energy of the film to be measured and the substrate, lead to Film can be obtained by crossing the calculating to parameters such as film temperature increment, light energy density, the absorptivity of film, film thicknesses Thermal conductivity factor;When the circle that the open-work on the substrate is radius R, the film thickness very little to be measured, so that energy Enough so that the film to be measured of the open-work upper section is uniform to light absorbs, one-dimensional ask is reduced in cylindrical coordinate Topic, hasWherein qrIt is the radial component of hot-fluid vector, k||It is heat conduction in the face of the film to be measured Coefficient, T (r) is Temperature Distribution, under steady state conditions, a reactor, and the luminous power that the border circular areas of the open-work absorbs is justified equal to open-work edge Luminous power stream at week, so as to obtain r2π·pabs=2r π dqr(r), wherein d is the film thickness to be measured, pabsIt is institute The region absorption power density of film to be measured is stated, boundary condition T (r=R)=T at r=R is reapplieds, TsIt is underlayer temperature, obtains To the Temperature Distribution of the film to be measuredDuring wherein r is cylindrical coordinate Thermal conductivity factor k in radial variable, the face of the film to be measured||Can be directly by the Temperature Distribution curvature at neighbour hole center, absorption Power density pabsDetermined with the film thickness d to be measured, Temperature Distribution curvature can by measure local temperature difference come Arrive, can realize that the requirement to the measurement accuracy of absolute temperature reduces.
The substrate has described to be measured thin above the consistent some open-works of the shape of upper and lower surface, the open-work The heat distribution of film part depends on the shape of the open-work, and the substrate can be as passage of heat, and it has larger heat conduction Coefficient is quickly to walk waste heat transmission so that the film to be measured produces thermograde, and the substrate can be used as light again Mask, it reflects most of incident light, therefore under the highest light intensity irradiation of visible light source, the underlayer temperature it is upper Rise within 1K.
0.5 millimeter of the substrate thickness representative value, it is described when the circle that the open-work on the substrate is radius R 0.2 to 1 millimeter of bore dia scope;10 × 10 square millimeters of the magnitude range of the film to be measured is to 10 × 10 square microns;Institute State 80 microns of photodiode diameter representative value.
It is using a kind of experimental procedure for the device progress for measuring film coefficient of heat transfer:
One, determines the film thickness to be measured, and the film to be measured is placed in into a smooth glass substrate surface, used Contourgraph measures its thickness;
Two, measure the film to be measured to the light in the visible light source wave-length coverage by ultraviolet-visible spectrum experiment Absorptivity;
The film to be measured is transferred on the substrate by three,;
The transmitting visible ray below the substrate of visible light source described in four,;
Five, do not install the specimen holder, substrate and film to be measured now, it is seen that the light that light source is sent is directly entered the light Electric diode, the displacement platform is in the uniform motion in the plane of a certain height above the film to be measured, while the light Electric diode gathers optical signal, and obtains after computer disposal the illumination conversion efficiency figure of two dimension;
The illumination luminous power obtained in the absorptivity and step 5 of the film that six, are obtained in above-mentioned steps two is close Degree, calculates the region absorption power density p of the film to be measured under the conditions of certain heat flowabs
Seven, install the specimen holder, substrate and film to be measured, and horizontal direction moves the displacement platform and makes it away from the lining Bottom, the infrared light that film to be measured described in the infrared camera scan is sent, and be imaged, and then obtain the film to be measured Temperature Distribution, different through-hole position duplicate measurements are chosen over the substrate, by average data and analysis can be calculated The Temperature Distribution curvature at neighbour's open-work center;
Temperature Distribution curvature of eight, according to neighbour's open-work center, absorption power density pabsWith the film thickness d to be measured, Thermal conductivity factor k in the face of the film to be measured is determined by calculating||
The beneficial effects of the invention are as follows:
A kind of device for measuring film coefficient of heat transfer, causes film to be measured to produce temperature ladder by substrate with holes Degree, simplifies experimentation, because Temperature Distribution curvature can be obtained by measuring local temperature difference, to absolute temperature The requirement of measurement accuracy is reduced.
Brief description of the drawings
Further illustrated with reference to the figure of the present invention:
Fig. 1 is schematic diagram of the present invention.
In figure, 1. substrates, 2. films to be measured, 3. displacement platforms, 4. photodiodes, 5. visible light sources, 6. thermal cameras, 7. open-work.
Embodiment
If Fig. 1 is schematic diagram of the present invention, mainly include substrate 1, film to be measured 2, displacement platform 3, photodiode 4, visible Light source 5, thermal camera 6, open-work 7, computer, the substrate 1 are located on specimen holder, and specimen holder can need to move according to experiment Remove, the substrate 1 is made of copper, the film 2 to be measured is located above the substrate 1, the photodiode connection institute rheme On the downside of moving stage, the displacement platform 3 can be described visible in the move in plane apart from a certain height in the top of film 2 to be measured Light source 5 is located at the lower section of substrate 1, and the thermal camera 6 is fixed on directly over the substrate 1 and higher than the displacement platform 3, The visible light source 5 is produced after the lower section of substrate 1 irradiation upwards, the light absorbing energy of the film 2 and the substrate 1 to be measured Heat stream, passes through the calculating energy to parameters such as film temperature increment, light energy density, the absorptivity of film, film thicknesses Access the thermal conductivity factor of film;When the circle that the open-work on the substrate 1 is radius R, the thickness of film 2 to be measured is very It is small, so that the film 2 to be measured for enabling to the upper section of open-work 7 is uniform to light absorbs, in cylindrical coordinate In be reduced to one-dimensional problem, haveWherein qrIt is the radial component of hot-fluid vector, k||It is described to be measured Thermal conductivity factor in the face of film 2, T (r) is Temperature Distribution, under steady state conditions, a reactor, the light work(of the border circular areas absorption of the open-work Rate is equal to the luminous power stream at open-work edge circumference, so as to obtain
r2π·pabs=2r π dqr(r), wherein d is the thickness of film to be measured 2, pabsIt is the film to be measured 2 Region absorption power density, reapplies boundary condition T (r=R)=T at r=Rs, TsIt is underlayer temperature, obtains described to be measured thin The Temperature Distribution of film 2Wherein r is the radial variable in cylindrical coordinate, institute State thermal conductivity factor k in the face of film 2 to be measured||Can be directly by the Temperature Distribution curvature at neighbour hole center, absorption power density pabs Determine that Temperature Distribution curvature can be obtained by measuring local temperature difference, can realized with the thickness d of film 2 to be measured Requirement to the measurement accuracy of absolute temperature reduces.
Simple boundary condition used above does not account for arriving at thin film center above open-work above bore edges at film Change in shape, still, this change in shape is influenceed by open-work boundary thermal contact resistance, cause Temperature Distribution produce one The skew of additional constant, this shift term can be covered in the effective temperature of substrate.Therefore, k||Can be directly by neighbour hole The Temperature Distribution curvature at center, absorption power density pabsDetermined with the thickness d of film 2 to be measured.Due to Temperature Distribution curvature energy It is enough to be obtained by measuring local temperature difference, it can realize that the requirement to the measurement accuracy of absolute temperature is reduced.
The substrate 1 has through the consistent some open-works 7 of the shape of upper and lower surface, and the described of the top of open-work 7 is treated The heat distribution for surveying the part of film 2 depends on the shape of the open-work 7, and the substrate 1 can be as passage of heat, and it has larger Thermal conductivity factor so that quickly waste heat transmission to be walked so that the film 2 to be measured produces thermograde, the substrate 1 energy again It is enough that as photomask, it reflects most of incident light, therefore under the highest light intensity irradiation of visible light source 5, the lining The rising of the temperature of bottom 1 is within 1K;
0.5 millimeter of the 1 thickness representative value of substrate, it is described when the circle that the open-work 7 on the substrate 1 is radius R 0.2 to 1 millimeter of 7 diameter range of open-work;10 × 10 square millimeters to 10 × 10 squares of the magnitude range of the film to be measured 2 is micro- Rice;80 microns of the 4 diameter representative value of photodiode.

Claims (4)

1. a kind of device for measuring film coefficient of heat transfer, mainly including substrate (1), film to be measured (2), displacement platform (3), photoelectricity two Pole pipe (4), visible light source (5), thermal camera (6), open-work (7), computer, the substrate (1) are located on specimen holder, sample Frame can need to remove according to experiment, and the substrate (1) is made of copper, and the film (2) to be measured is located on the substrate (1) Face, the photodiode is connected on the downside of the displacement platform, and the displacement platform (3) can be on the film (2) to be measured The move in plane of a certain height in side, the visible light source (5) is located at below the substrate (1), and the thermal camera (6) is solid Directly over the substrate (1) and higher than the displacement platform (3), the visible light source (5) is upward below the substrate (1) Hot-fluid is produced after irradiation, the film (2) to be measured and the substrate (1) light absorbing energy, by film temperature increment, light Calculating according to parameters such as energy density, the absorptivity of film, film thicknesses can obtain the thermal conductivity factor of film;When the lining The circle that the open-work on bottom (1) is radius R, film (2) the thickness very little to be measured, so that enabling to the open-work (7) film (2) to be measured of upper section is uniform to light absorbs, and one-dimensional problem is reduced in cylindrical coordinate, is hadWherein qrIt is the radial component of hot-fluid vector, k||It is heat conduction system in the face of the film to be measured (2) Number, T (r) is Temperature Distribution, under steady state conditions, a reactor, and the luminous power that the border circular areas of the open-work absorbs is equal to open-work edge circumference The luminous power stream at place, so as to obtain r2π·pabs=2r π dqr(r), wherein d is film to be measured (2) thickness, pabsIt is The region absorption power density of the film to be measured (2), reapplies boundary condition T (r=R)=T at r=RsObtain described treat Survey the Temperature Distribution of film (2)Wherein r is that the radial direction in cylindrical coordinate becomes Amount, TsIt is underlayer temperature, thermal conductivity factor k in the face of the film (2) to be measured||Can be directly by the Temperature Distribution at neighbour hole center Curvature, absorption power density pabsDetermine that Temperature Distribution curvature can be by measuring local temperature with film (2) thickness d to be measured Spend difference to obtain, can realize that the requirement to the measurement accuracy of absolute temperature reduces,
It is characterized in that:The substrate (1) has on the consistent some open-works (7) of the shape of upper and lower surface, the open-work (7) The heat distribution of film (2) part to be measured of side depends on the shape of the open-work (7), and the substrate (1) can be as leading The passage of heat, it has larger thermal conductivity factor quickly to walk waste heat transmission so that the film (2) to be measured produces temperature Gradient, the substrate (1) again can be as photomask, and it reflects most of incident light, therefore even in visible light source (5) Under the irradiation of highest light intensity, the rising of substrate (1) temperature is within 1K.
2. a kind of device for measuring film coefficient of heat transfer according to claim 1, it is characterized in that:Substrate (1) thickness 0.5 millimeter of representative value, when the circle that the open-work (7) on the substrate (1) is radius R, open-work (7) diameter range 0.2 to 1 millimeter.
3. a kind of device for measuring film coefficient of heat transfer according to claim 1, it is characterized in that:The film to be measured (2) 10 × 10 square millimeters of magnitude range to 10 × 10 square microns.
4. a kind of device for measuring film coefficient of heat transfer according to claim 1, it is characterized in that:The photodiode (4) 80 microns of diameter representative value.
CN201710387367.7A 2017-05-18 2017-05-18 Device for measuring heat conductivity coefficient of film Active CN107064213B (en)

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Publication number Priority date Publication date Assignee Title
CN109060759A (en) * 2018-06-26 2018-12-21 中国电子科技集团公司第五十五研究所 Semiconductive thin film analysis of thermal conductivity method based on Raman spectrum measuring technology
CN109827850A (en) * 2019-01-15 2019-05-31 广东工业大学 A kind of fexible film stretch bending device
CN111103318A (en) * 2019-12-11 2020-05-05 东莞烯事达新材料有限公司 Method and system for testing thermal conductivity of low-dimensional material
CN114295670A (en) * 2021-12-24 2022-04-08 上海交通大学 Multi-dimensional heat conduction performance test system and test method thereof

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Publication number Priority date Publication date Assignee Title
CN109060759A (en) * 2018-06-26 2018-12-21 中国电子科技集团公司第五十五研究所 Semiconductive thin film analysis of thermal conductivity method based on Raman spectrum measuring technology
CN109060759B (en) * 2018-06-26 2021-06-08 中国电子科技集团公司第五十五研究所 Semiconductor film thermal conductivity analysis method based on Raman spectrum testing technology
CN109827850A (en) * 2019-01-15 2019-05-31 广东工业大学 A kind of fexible film stretch bending device
CN111103318A (en) * 2019-12-11 2020-05-05 东莞烯事达新材料有限公司 Method and system for testing thermal conductivity of low-dimensional material
CN114295670A (en) * 2021-12-24 2022-04-08 上海交通大学 Multi-dimensional heat conduction performance test system and test method thereof
CN114295670B (en) * 2021-12-24 2024-04-05 上海交通大学 Multi-dimensional heat conduction performance testing system and testing method thereof

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