CN104133345B - A kind of focusing leveling device and method - Google Patents
A kind of focusing leveling device and method Download PDFInfo
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- CN104133345B CN104133345B CN201310158882.XA CN201310158882A CN104133345B CN 104133345 B CN104133345 B CN 104133345B CN 201310158882 A CN201310158882 A CN 201310158882A CN 104133345 B CN104133345 B CN 104133345B
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Abstract
The present invention proposes the focusing leveling device of a kind of lithographic equipment, including: lighting unit, projection slit, projecting cell, image-generating unit, reflecting mirror, probe unit and central processing unit；The light that described lighting unit sends forms hot spot by described projection unit projects at a silicon chip surface described projection slit；Described hot spot, after silicon chip surface reflects, enters described probe unit through described image-generating unit, described reflecting mirror；It is characterized in that described focusing leveling device also includes: mirror drive platform, drive described reflecting mirror to carry out one-dimensional scanning along incident beam direction and move；And location measurement unit, for measuring the vertical position information of described reflecting mirror；Silicon chip surface positional information described in the positional information calculation of the described reflecting mirror that described CPU, the intensity signal of the described hot spot collected according to described probe unit and described location measurement unit obtain.The focusing leveling device of present invention proposition and method, it is possible to obtain the vertical position on measurand surface in the case of silicon chip surface reflectance is inconsistent, improve Technological adaptability and the alignment precision of focusing and leveling.
Description
Technical field
The present invention relates to the manufacture equipment and technology of integrated circuit, specifically, relate to silicon chip is focused by a kind of litho machine
The apparatus and method of leveling.
Background technology
In projection lithography device, silicon slice focusing and leveling measurement apparatus is generally used to realize the height of the specific region to silicon chip surface
Degree and the measurement of gradient.This measurement apparatus is had higher required precision, and silicon chip can not be damaged.So, silicon chip focusing
It must be non-contact measurement that leveling is measured, and conventional contactless focusing leveling measuring method has three kinds: optical measuring method, electricity
Hold measurement method and barometry.
In scanning projection lithographic equipment now, many use optical measuring methods realize the focusing and leveling to silicon chip and measure.
Conventional measuring method ultimate principle is to utilize optical lighting system and optical projection system, and hot spot is irradiated to silicon chip table
Face, and utilize imaging and detection system to remove to detect the hot spot of silicon chip reflection.When silicon chip surface height and inclination change, from
The position of the hot spot of silicon chip surface reflection also changes, or laser spot detection signal rule changes, by detecting this light
The change information of speckle position, or laser spot detection signal rule information, it is possible to determine the apparent height of silicon chip or the overall clear of silicon chip
Clear.Typical case is shown in United States Patent (USP) U.S.4,558,949(Horizontal position detecting device, nineteen eighty-two 9 applying date
The moon 17), Chinese patent CN200710171209.4.
Silicon chip flare information detection, a kind of employing CCD(charged-coupled device) mode, utilize flare
Image space at CCD calculates the elevation information of silicon chip surface.Another kind, in imaging system, uses scanning reflection mirror, right
Flare signal is modulated, in detectable signal processing links, by the demodulation process to modulated signal, and according to demodulation
The power of the modulating frequency composition of rear signal infers the position of silicon chip surface.
When both the above mode directly uses, under some silicon chip process conditions, as in the range of hot spot correspondence area of silicon wafer, by
Different in process conditions, under conditions of reflectance is inconsistent, the situation that detecting location is inaccurate all can occur.On such as silicon chip surface
Having component graphics, there is metal level some positions, and some positions do not have, and reflectance is the most different；Facula position covers for another example
Cutting Road and device region, also have the different situation of reflectance.
If directly using CCD to go to detect facula position, owing to reflectance is inconsistent, CCD detects the profile of hot spot
Change, cause calculating spot center position result generation deviation.If using scanning reflection mirror at imaging optical path, utilizing and adjusting
After system demodulation, the information of signal detects silicon chip vertical position, if the overall consistent situation of hot spot correspondence silicon chip surface region reflectance
Under, can be by the normalized of acquisition of signal link, the problem solving silicon chip reflectance overall variation, but when hot spot is corresponding
In area of silicon wafer, reflectance is uneven, will directly influence the waveform of detectable signal, and then affect modulating frequency composition size,
And then affect the repeatability that silicon chip vertical position is measured.
Such as silicon chip surface reflector space schematic diagram when Fig. 1 is existing focusing and leveling.202 is silicon chip surface, and wherein region 201 is
Reflectance is different from the region of periphery.Region 204 has projected to the uniform region of reflectance, region for focusing and leveling projection hot spot
203 have projected to, for focusing and leveling projection hot spot, the region that reflectance is uneven.
Traditional focusing leveling device, does not all have to carry out the reflecting mirror of one-dimensional scanning, and uses CCD form in end of probe,
The mode utilizing CCD to obtain facula position detects.In Fig. 2 a, hot spot 302 projected to area of silicon wafer reflectance is uniform
Situation, in Fig. 2 b, hot spot 303 projected to area of silicon wafer reflectance is uneven situation.Fig. 3 a is that spot projection is to silicon
Sheet reflectance is the detection signal of CCD in the case of uniform region, and Fig. 3 b is that spot projection is uneven to silicon chip reflectance
The detection signal of CCD under areas case.In the case of Fig. 3 a, easily determine the center of detection hot spot, the most easily determine
The vertical position of silicon chip, in fig 3b, owing to reflectance is uneven, under same algorithm, is difficult to accurately calculate in hot spot
Heart position, i.e. when determining silicon chip vertical position, can produce certain deviation, reduce Technological adaptability.
Traditional focusing leveling device, also has in the optical path, uses the form of scanning reflection mirror, i.e. uses light electrical resistivity survey in end of probe
Survey device and remove detectable signal.By scanning reflection mirror periodic wobble, can make detectable signal with scanning reflection mirror motion frequency
Tie element, is demodulated by signal below, can the size of this frequency content be extracted, when silicon chip vertical position becomes
During change, after signal demodulation, the size of respective frequencies composition also can change, and utilizes this relation, can be by the frequency of demodulated signal
Composition size contacts with the vertical position foundation of silicon chip surface, and off-line is demarcated.This result, is easily caused, at silicon chip table
In the case of face reflectance is uneven, the actual vertical position of silicon chip surface is unchanged, but respective frequencies composition big after signal demodulation
Little change, when Extrapolation silicon chip surface vertical position, cause calculating deviation.
Focusing leveling device based on scanning reflection mirror form, Fig. 4 a represents that projected to area of silicon wafer reflectance is uniform situation
Lower detector detection detection hot spot 401, Fig. 4 b represent projected to area of silicon wafer reflectance be uneven in the case of detection
The detection hot spot 402 of device detection.Fig. 5 is the difference of hot spot 401 and 402 time-domain detection signal 501 and 502 in varied situations
Not, be there is difference by two kinds of time-domain signal difference in the size causing respective frequencies composition, directly results in the calculating vertical position of silicon chip surface
The deviation put.
Summary of the invention
For solving above-mentioned silicon chip focusing, leveling Technological adaptability problem, enable in particular to adapt to the technique that silicon chip surface reflectance is inconsistent
Situation, obtain measurand surface vertical position, the present invention propose a kind of optically-based measurement method focusing leveling device and
Method.
The present invention proposes the focusing leveling device of a kind of lithographic equipment, including: lighting unit, projection slit, projecting cell, become
As unit, reflecting mirror, probe unit and central processing unit；The light that described lighting unit sends passes through institute described projection slit
State projection unit projects and form hot spot at a silicon chip surface；Described hot spot silicon chip surface reflect after, through described image-generating unit,
Described reflecting mirror enters described probe unit；It is characterized in that described focusing leveling device also includes: mirror drive platform,
Drive described reflecting mirror to carry out one-dimensional scanning along incident beam direction to move；And location measurement unit, it is used for measuring described reflection
The vertical position information of mirror；Described CPU, the intensity signal of the described hot spot collected according to described probe unit with
And silicon chip surface positional information described in the positional information calculation of described reflecting mirror that obtains of described location measurement unit.
Further, described probe unit includes detecting slit and detector, in order to described silicon chip surface is performed many hot spots and visits
Survey.
Further, described projection slit is multiple, accordingly, and described detection slit, detector are also multiple.
Further, described CPU collects according to the plurality of detector multiple hot spot intensity signals and and institute
The height of silicon chip surface described in the positional information calculation of the described reflecting mirror that position measurement unit obtains and inclination.
Further, described CPU obtains according to reflector position information corresponding during described hot spot light intensity maximum
Silicon chip surface positional information.
Further, there is following relation between described reflector position and described silicon chip surface position:
Z2=(Xz0-Xz2)/(2*k1*cos(Fai1))+Z0；Wherein Fai1 is the folder of incident beam and measurand desirable level face
Angle；K1 is the axle amplification coefficient that hangs down；Z0, Z2 are correspondence vertical position, silicon chip face, and Z0 is silicon chip face original reference position；Xz0、
Xz2 is the positional information that mirror drive platform is corresponding, and wherein Xz0 is when measurand is in z0 position, detects light intensity maximum
Mirror drive platform position corresponding during value, Xz2 is when measurand is in z2 position, detects during light intensity maximum corresponding
Mirror drive platform position.
The present invention also proposes a kind of method using said apparatus to carry out focusing and leveling, comprises the steps:
(1) mirror drive platform position resets；
(2) receive vertical position and obtain instruction；
(3) mirror drive platform drives reflecting mirror to carry out one-dimensional scanning along incident beam direction；
(4) mirror drive platform position acquisition, detector light intensity data gathers；
(5) mirror drive platform resets；
(6) silicon chip vertical position data are calculated；
(7) output vertical position data.
Further, described detector is multiple.
Further, also include: step (8) calculates height and the inclination of silicon chip surface according to many hot spots vertical position data.
The focusing and leveling measurement apparatus of present invention proposition and method, it is possible in the case of silicon chip surface reflectance is inconsistent, obtain quilt
Survey the vertical position of subject surface, improve Technological adaptability and the alignment precision of focusing and leveling.
Accompanying drawing explanation
Can be described in detail by invention below about the advantages and spirit of the present invention and institute's accompanying drawings is further understood.
Silicon chip surface reflector space schematic diagram when Fig. 1 is existing focusing and leveling；
Fig. 2 a is that spot projection is to the uniform region of silicon chip reflectance；
Fig. 2 b is spot projection to the uneven region of silicon chip reflectance；
Fig. 3 a is the detection signal of CCD in the case of Fig. 2 a；
Fig. 3 b is the detection signal of CCD in the case of Fig. 2 b；
Fig. 4 a is to detect spot projection in existing scanning reflection mirror focusing leveling device to the uniform region of silicon chip reflectance；
Fig. 4 b is to detect spot projection in existing scanning reflection mirror focusing leveling device to the uneven region of silicon chip reflectance；
Fig. 5 is the difference of time-domain detection signal under different situations in figs. 4 a and 4b；
Fig. 6 is the present invention focusing leveling device structural representation for lithographic equipment；
Fig. 7 is the focusing leveling device principle schematic of the present invention；
Fig. 8 is to measure reflecting mirror during focusing and leveling of the present invention measurement to carry out one-dimensional scanning motion schematic diagram；
Detection light intensity and the location diagram measuring reflecting mirror when Fig. 9 is focusing and leveling of the present invention measurement；
Figure 10 and Figure 11 is vertical position and the measurement reflector position corresponding relation schematic diagram of silicon chip surface；
Figure 12 is that silicon chip is vertical when measuring when being positioned at Z2 and measure reflector position relation schematic diagram for focusing and leveling of the present invention；
Figure 13 is focusing and leveling of the present invention silicon chip is vertical when measuring when being positioned at Z2 detection light intensity and the location diagram measuring reflecting mirror；
Figure 14 is focusing leveling device single-spot monocycle measurement procedure figure of the present invention；
Figure 15 is focusing leveling device many facula measurements schematic diagram of the present invention；
Measure reflector position when Figure 16 is focusing leveling device many facula measurements of the present invention to illustrate with each sub-detector detectable signal
Figure；
Figure 17 is focusing leveling device many hot spots monocycle measurement procedure figure of the present invention.
Detailed description of the invention
Describe the specific embodiment of the present invention below in conjunction with the accompanying drawings in detail.
Fig. 6 is the present invention focusing leveling device structural representation for lithographic equipment.As shown in Figure 6, illuminator 117
Image projection on mask 118 is exposed on silicon chip 121 by the light gone out by projection objective 120.Mask 118 is by mask platform 119
Supporting, silicon chip 121 is supported by work stage 122.Mask platform includes mask platform driver element and location measurement unit, and silicon wafer stage is also
There are corresponding silicon wafer stage driver element and location measurement unit, not shown in figure.
The silicon slice focusing and leveling measurement apparatus of the present invention is arranged between projection objective 120 and silicon chip 121, for silicon chip 121
The positional information on surface measures, including: the light that light source 101 sends passes through lighting unit 102 and reflecting mirror 103, will throw
The pattern of shadow slit 104 forms hot spot through projecting cell 105 and reflecting mirror 106, the surface projecting to silicon chip 121；At silicon
Hot spot after the reflection of sheet surface, through reflecting mirror 107, image-generating unit 108, by detecting slit 113 He after measuring reflecting mirror 110
Detector 114 detection receives.Photosignal after reception, is processed by signal processing unit 115 and is gathered, the light intensity after collection
Data, send central processing unit 116 to.Wherein measure reflecting mirror 110 to carry out under the driving of mirror drive platform 111
One-dimensional scanning, and measure reflecting mirror and drive the position of platform can be measured by reflector position measurement apparatus 112, pass
Give central processing unit 116.Central processing unit calculates vertical position data, for the measurement of complete machine.Wherein in imaging system
With tunable optical component, motor 109 driving, tunable optical component is mainly used in this covering device initial installation system deviation
Compensate.
Fig. 7 is the focusing leveling device principle schematic of the present invention.As it is shown in fig. 7, when silicon chip is vertical be in zero-bit Z0 time, light
After speckle projects to silicon chip surface reflection, through image-generating unit, after measured reflecting mirror 110, detector detection receive.Survey
Amount reflecting mirror 110, under the driving of driver, carries out one-dimensional scanning, obtains reflecting mirror spot center at vertical Xz0, and
And this position is relevant to the vertical position of silicon chip.When silicon chip is in different vertical positions, such as Z1, measures reflecting mirror 110 and exist
Under the driving of driver, carrying out one-dimensional scanning, the position of this measurement reflecting mirror is the position corresponding with the vertical position Z1 of silicon chip.
Utilize this principle, for the different vertical height of silicon chip, utilize and measure the reflecting mirror 110 one-dimensional scanning under the driving of driver,
It is assured that when detector detects spot center, the corresponding position measuring reflecting mirror 110, by this position, can release
The vertical position of silicon chip surface.
Fig. 8 is to measure reflecting mirror during focusing and leveling of the present invention measurement to carry out one-dimensional scanning motion schematic diagram.Measure reflecting mirror and carry out one
During dimension scanning motion, one-dimensional scanning detector 602 scanning light spot 601.When detecting hot spot and detection slit is same size,
The position relationship of detection light intensity and measurement reflecting mirror is as shown in Figure 9.Reflect by calculating the measurement that in Fig. 9, energy maximum point is corresponding
The position of mirror 110, it is simply that with the position data that there is corresponding relation silicon chip surface vertical position.Utilize this detection mode, for
The technological problems being above previously mentioned in prior art, there would not be.Even the reflectance of silicon chip surface is uneven, work as detection
When hot spot overlaps with detection slit, it is simply that extreme point.
Figure 10 with Figure 11 is the corresponding pass of the vertical position determining and measuring reflecting mirror 110 scanning probe position and actual silicon chip surface
System.In Figure 10, incident ray 701 is irradiated to silicon chip surface, and when silicon chip vertical position is Z0, its reflection light beam is 702,
When silicon chip vertical position becomes Z1, reflection light beam is 703.
Variable implication is defined as follows；
Fai1 is the angle of incident beam and measurand desirable level face；
Dz is vertical position, silicon chip face variable quantity；
Dz1 is to be caused reflection light beam being perpendicular to reflect the variable quantity of position on beam direction by the change of vertical position, silicon chip face；
K1 is the axle amplification coefficient that hangs down；
Dz2, Dz3 are to be perpendicular to reflect the variable quantity of position on beam direction at diverse location reflection light beam；
Z0, Z1, Z2 are correspondence vertical position, silicon chip face, and Z0 is silicon chip face original reference position；
Xz0, Xz1, Xz2 are the positional information that mirror drive platform is corresponding, and wherein Xz0 is when measurand is in z0 position,
Detecting mirror drive platform position corresponding during light intensity maximum, wherein Xz2 is when measurand is in z2 position, detects
Mirror drive platform position corresponding during light intensity maximum.
Can be calculated according to the size relationship in figure:
Dz1/AB=sin(2*Fai1)
Dz/AB=sin(Fai1)
Can obtain:
Dz1=2*cos(Fai1)*Dz。
In Figure 11, when silicon chip vertical position is Z0, measures reflecting mirror 110 detector when Xz0 position and can detect hot spot
Center.When silicon chip vertical position becomes Z1, measure reflecting mirror 110 detector when Xz1 position and can detect in hot spot
The heart.Simplification processes further in the drawings, i.e. the incident beam of reflecting mirror is to incide mirror surface with 45 degree.Then can obtain,
Dz2=Dz3。
For specific optical imaging system, vertical axle amplification coefficient k1, i.e. Dz2=k1*Dz1, it is possible to determine silicon can be introduced
The corresponding relation of sheet vertical position:
Dz=Dz3/(2*k1*cos(Fai1))。
As shown in figure 12, when silicon chip the most former vertical position Z0 occurs change in location, as in Z2 position, measure reflecting mirror
110 under the driving of driver, carries out one-dimensional scanning, and the hot spot after the reflection of the most measured reflecting mirror 110 can scan detection
Device, it scans the position relationship of detection light intensity and the measurement reflecting mirror obtained as shown in figure 13, obtains detecting hot spot when Xz2
Measure the position of reflecting mirror 110.
The position that thus can calculate silicon chip Z2 is:
Z2=(Xz0-Xz2)/(2*k1*cos(Fai1))+Z0。
Figure 14 is that focusing leveling device of the present invention uses single-spot measurement procedure figure.For single-spot, the vertical position of single computation of Period
The process step put is as follows:
(1) measure mirror drive platform position to reset；
(2) receive vertical position and obtain instruction；
(3) mirror drive platform drives reflecting mirror to carry out one-dimensional scanning along incident beam direction；
(4) mirror drive platform position acquisition, detector light intensity data gathers；
(5) mirror drive platform resets；
(6) silicon chip vertical position data are calculated；
(7) output vertical position data.
Figure 15 is many facula measurements schematic diagram.As a example by five hot spots, hot spot N1, N2, N3, N4, N5 are at silicon chip surface
Layout is as shown in figure 15.
Reflector position and each sub-detector detectable signal schematic diagram is measured when Figure 16 is many facula measurements.In figure, hot spot N1,
N2, N3, N4, N5 are respectively Xzn1, Xzn2, Xzn3 in the position measuring reflecting mirror 110 that detection energy level is corresponding a little louder,
Xzn4, Xzn5.Silicon chip surface hot spot N1, the vertical position of N2, N3, N4, N5 corresponding region can be calculated accordingly.
So that it is determined that the pattern of silicon chip entirety or inclination.
Figure 17 is for using many hot spots, monocycle vertical position calculation process, and key step is as follows:
(1) mirror drive platform position reset 901；
(2) vertical position obtains 902；
(3) mirror drive platform drives reflecting mirror to carry out one-dimensional scanning 903 along incident beam direction；
(4) mirror drive platform position acquisition 904-1, multi-detector light intensity data gathers 904-2；
(5) mirror drive platform reset 905；
(6) each hot spot vertical position data 906 are calculated respectively；
(7) each hot spot vertical position data 907 are exported；
(8) calculate the height of measured surface according to many hot spots vertical position data and tilt 908.
The preferred embodiment of the simply present invention described in this specification, above example is only in order to illustrate the technology of the present invention
Scheme rather than limitation of the present invention.All those skilled in the art are under this invention's idea by logical analysis, reasoning or limited
The available technical scheme of experiment, all should be within the scope of the present invention.
Claims (9)
1. a focusing leveling device for lithographic equipment, including: lighting unit, projection slit, projecting cell, image-generating unit,
Reflecting mirror, probe unit and central processing unit；The light that described lighting unit sends is single by described projection described projection slit
Unit is projected in a silicon chip surface and forms hot spot；Described hot spot is after silicon chip surface reflects, through described image-generating unit, described reflection
Mirror enters described probe unit；It is characterized in that described focusing leveling device also includes:
Mirror drive platform, during measuring, drives described reflecting mirror to carry out one-dimensional scanning along incident beam direction and moves；With
And
Location measurement unit, for measuring the vertical position information of described reflecting mirror；
Described CPU, the intensity signal of the described hot spot collected according to described probe unit and institute's position measurement
Silicon chip surface positional information described in the positional information calculation of the described reflecting mirror that unit obtains, specifically, vertical for different silicon chips
Highly, utilize described reflecting mirror one-dimensional scanning under the driving of described mirror drive platform, determine that described probe unit detects
During spot center, the corresponding position measuring described reflecting mirror, by described position, release the vertical position of described silicon chip surface,
During above-mentioned measurement, described hot spot is identical with the detection slit sizes of described probe unit.
2. focusing leveling device as claimed in claim 1, it is characterised in that described probe unit includes detecting slit and detector,
So that described silicon chip surface is performed many laser spot detections.
3. the focusing leveling device of lithographic equipment as claimed in claim 2, it is characterised in that described projection slit is multiple, right
Ying Di, described detection slit, detector are also multiple.
4. the focusing leveling device of lithographic equipment as claimed in claim 3, it is characterised in that described CPU is according to institute
State multiple hot spot intensity signals that multiple detector collects and and the position letter of described reflecting mirror that obtains of described location measurement unit
Breath calculates height and the inclination of described silicon chip surface.
5. the focusing leveling device of lithographic equipment as claimed in claim 1, it is characterised in that described CPU is according to institute
Reflector position information corresponding when stating hot spot light intensity maximum is to obtain silicon chip surface positional information.
6. the focusing leveling device of lithographic equipment as claimed in claim 5, it is characterised in that described reflector position is with described
Following relation: Z2=(Xz0-Xz2)/(2*k1*cos (Fai1))+Z0 is there is between silicon chip surface position；Wherein Fai1 is for entering
Irradiating light beam and the angle in measurand desirable level face；K1 is the axle amplification coefficient that hangs down；Z0, Z2 are correspondence vertical position, silicon chip face,
Z0 is silicon chip face original reference position；Xz0, Xz2 are the positional information that mirror drive platform is corresponding, and wherein Xz0 is when tested
Object, when z0 position, detects mirror drive platform position corresponding during light intensity maximum, and Xz2 is when measurand is at z2
During position, detect mirror drive platform position corresponding during light intensity maximum.
7. the method using the device as described in one of claim 1-6 to carry out focusing and leveling, comprises the steps:
(1) mirror drive platform position resets；
(2) receive vertical position and obtain instruction；
(3) mirror drive platform drives reflecting mirror to carry out one-dimensional scanning along incident beam direction；
(4) mirror drive platform position acquisition, detector light intensity data gathers；
(5) mirror drive platform resets；
(6) silicon chip vertical position data are calculated；
(7) output vertical position data.
8. focusing and leveling method as claimed in claim 7, it is characterised in that described detector is multiple.
9. focusing and leveling method as claimed in claim 8, it is characterised in that also include: step (8) is according to the vertical position of many hot spots
Put data and calculate height and the inclination of silicon chip surface.
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| CN106997152B (en) * | 2016-01-26 | 2019-11-26 | 上海微电子装备（集团）股份有限公司 | Scanning reflection mirror monitors system and method, focusing and leveling system |
| CN108663908B (en) * | 2017-03-31 | 2019-11-22 | 上海微电子装备（集团）股份有限公司 | Laser interferometer reflecting mirror topography measurement method and lithographic equipment |
| CN114114860B (en) * | 2020-08-31 | 2023-02-28 | 上海微电子装备（集团）股份有限公司 | Focus detection device and method |
| CN113375576A (en) * | 2021-06-09 | 2021-09-10 | 上海光之虹光电通讯设备有限公司 | Light spot diameter detection system and method and light spot energy distribution detection method |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4558949A (en) * | 1981-12-26 | 1985-12-17 | Nippon Kogaku Kk | Horizontal position detecting device |
| CN1948900A (en) * | 2005-10-14 | 2007-04-18 | 鸿富锦精密工业（深圳）有限公司 | Optical type positioning device |
| CN101329513A (en) * | 2008-07-08 | 2008-12-24 | 上海微电子装备有限公司 | Double-scanning type silicon chip focusing, leveling and measuring apparatus and system |
| CN101344727A (en) * | 2008-06-26 | 2009-01-14 | 上海微电子装备有限公司 | Focusing and leveling detection device and method |
| CN101403866A (en) * | 2008-11-18 | 2009-04-08 | 上海微电子装备有限公司 | Object position measurement apparatus and method |
| CN101526746A (en) * | 2009-01-07 | 2009-09-09 | 上海微电子装备有限公司 | Vertical measuring system capable of adjusting zero-plane position |
| CN102043352A (en) * | 2009-10-13 | 2011-05-04 | 上海微电子装备有限公司 | Focusing and leveling detection device |
| CN102252606A (en) * | 2010-05-21 | 2011-11-23 | 上海微电子装备有限公司 | Zero adjusting device for focusing and leveling measurement system |
-
2013
- 2013-05-03 CN CN201310158882.XA patent/CN104133345B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4558949A (en) * | 1981-12-26 | 1985-12-17 | Nippon Kogaku Kk | Horizontal position detecting device |
| CN1948900A (en) * | 2005-10-14 | 2007-04-18 | 鸿富锦精密工业（深圳）有限公司 | Optical type positioning device |
| CN101344727A (en) * | 2008-06-26 | 2009-01-14 | 上海微电子装备有限公司 | Focusing and leveling detection device and method |
| CN101329513A (en) * | 2008-07-08 | 2008-12-24 | 上海微电子装备有限公司 | Double-scanning type silicon chip focusing, leveling and measuring apparatus and system |
| CN101403866A (en) * | 2008-11-18 | 2009-04-08 | 上海微电子装备有限公司 | Object position measurement apparatus and method |
| CN101526746A (en) * | 2009-01-07 | 2009-09-09 | 上海微电子装备有限公司 | Vertical measuring system capable of adjusting zero-plane position |
| CN102043352A (en) * | 2009-10-13 | 2011-05-04 | 上海微电子装备有限公司 | Focusing and leveling detection device |
| CN102252606A (en) * | 2010-05-21 | 2011-11-23 | 上海微电子装备有限公司 | Zero adjusting device for focusing and leveling measurement system |
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