CN101329513A - Double-scanning type silicon chip focusing, leveling and measuring apparatus and system - Google Patents
Double-scanning type silicon chip focusing, leveling and measuring apparatus and system Download PDFInfo
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- CN101329513A CN101329513A CNA2008100403492A CN200810040349A CN101329513A CN 101329513 A CN101329513 A CN 101329513A CN A2008100403492 A CNA2008100403492 A CN A2008100403492A CN 200810040349 A CN200810040349 A CN 200810040349A CN 101329513 A CN101329513 A CN 101329513A
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Abstract
The invention provides a double scanning silicon wafer focusing and leveling measuring device and a system, which are applied in a leveling and focusing system of a projection photoetching machine; the double scanning silicon wafer focusing and leveling measuring device consists of a lighting unit, a projection unit, an imaging unit and a detecting unit, wherein, the projection unit projects a slit or a slit array on the surface of the silicon wafer so as to form a measuring spot or a spot array; the detecting unit comprises a first detecting subunit, a second detecting subunit and an electric signal processing unit; beams ejected from the imaging unit pass through the first detecting subunit and the second detecting subunit and enters the electric signal processing unit for phase-sensitive demodulation. The double scanning silicon wafer focusing and leveling measuring device of the invention has larger effective linearized areas, little difficulty of optical design and comparatively compact structure.
Description
Technical field
The present invention relates to a kind of focusing and leveling measurement apparatus, particularly a kind ofly be used to measure the silicon chip surface specific region with respect to the height of the best focal plane of projection objective and the focusing and leveling measurement apparatus and the system of degree of tilt.
Background technology
In the projection lithography device, in order to carry out high-precision measurement in the position to silicon chip surface, for fear of measurement mechanism damage silicon chip, it must be non-contact measurement that focusing and leveling is measured simultaneously, and promptly device itself does not directly contact testee.Contactless focusing leveling measuring method commonly used has three kinds: optical measuring method, capacitance measurement and barometry.
See also Fig. 1, wherein shown optical exposure system plane principle schematic.As shown in the figure, under the irradiation of illuminator 100, light source exposes the image projection on the mask 220 to silicon chip 420 by projection objective 310.Mask 220 is by mask platform 210 supportings, and silicon chip 420 is by work stage 410 supportings.In Fig. 1, a silicon slice focusing and leveling measurement apparatus 500 is arranged between projection objective 310 and silicon chip 420, rigid attachment is carried out in this device and projection objective 310 or projection objective supporting 300, be used for the positional information on silicon chip 420 surfaces is measured, measurement result is sent to silicon chip surface position control system 560, after the calculating through signal Processing and focusing and leveling amount, the position that drives 430 pairs of work stage 410 of focusing and leveling actuator is adjusted, and finishes the focusing and leveling of silicon chip 420.
The ray machine part of silicon slice focusing and leveling measurement apparatus generally is made up of lighting unit, projecting cell, image-generating unit and probe unit, and wherein projecting cell is projected in silicon chip surface with slit (array), and forms measurement hot spot (array).
In the scanning projection lithographic equipment of prior art, use optical measuring method to realize the focusing and leveling measurement, the technology of optical focusing leveling measurement apparatus is varied more.Wherein, Nikon company adopts the technology based on the scanning reflection mirror modulation, specifically referring to the early stage patent US4558949 of the U.S., be disclosed on Dec 17th, 1985, the technical scheme that this patent of invention disclosed is to use scanning reflection mirror that measuring-signal is modulated, and then use phase demodulation that the electric signal after the opto-electronic conversion is carried out demodulation, thereby acquisition and silicon chip surface height be electric signal one to one, this technical scheme has solved the lower problem of measuring-signal signal to noise ratio (S/N ratio) well, but also has following some deficiency simultaneously:
(1) effectively the linearization zone is limited.
The signal that goes out through phase demodulation for the signal of scanning reflection mirror sweep frequency same frequency, the intensity of this signal has directly reflected the height of current silicon chip surface, but be between the intensity of this signal and the silicon chip surface altitude signal and be similar to sinusoidal variation tendency, when the side-play amount of measuring spot center and detection slit center is increasing, the sensitivity of measurement mechanism is low more, and its repeatable accuracy is also low more.When the side-play amount of measuring spot center and detection slit center was half of detecting module measurement hot spot direction of scanning width, the sensitivity of measurement mechanism was zero.Therefore, during normal use, general a certain section of only using such sinusoidal curve centre.
(2) improve the visual field that measurement range often needs to increase optical system.
As mentioned above, the effective linearization of this measurement mechanism zone is limited, often needs to increase the measurement hot spot and surveys the size of slit on the direction of scanning thereby will improve measurement range.When multimetering, (adopt 49 hot spots as the present type of Nikon, specifically see " Higher NA ArF scanning exposure tool on newplatform for further 100nm technology node ", Proc.SPIE, the 4346th phase of calendar year 2001, the 651st～658 page), the visual field of optical system certainly will also will be done greatly, and this will make the more difficult control of optical system imaging quality, and optical texture will be huger also.
Summary of the invention
In view of this, a kind of double-scanning type silicon chip focusing, leveling measurement mechanism that the purpose of this invention is to provide, it has bigger effective linearization zone, and the optical design difficulty is little, the structure relative compact.
For achieving the above object, the invention provides a kind of double-scanning type silicon chip focusing, leveling measurement mechanism, be applied in the leveling and focusing system of projection mask aligner, described double-scanning type silicon chip focusing, leveling measurement mechanism is by lighting unit, projecting cell, image-generating unit and probe unit are formed, described projecting cell is projected in silicon chip surface with slit or slit array, form and measure hot spot or spot array, wherein, described probe unit comprises first, second surveys subelement, and the electric signal processing unit, the light beam of described image-generating unit outgoing enters the electric signal processing unit via the first and second detection subelements respectively and carries out phase demodulation.
In more detail, described the first/the second survey that order that subelement propagates by light path corresponding to described slit or slit array is provided with the first/the second scanning reflection mirror successively or reflection mirror array, the first/the second is surveyed slit or surveyed slit array and the first/the second energy-probe or energy-probe array.The light beam of described image-generating unit outgoing incides on described first scanning reflection mirror or the reflection mirror array after reflecting through a spectroscope, through then inciding on described second scanning reflection mirror or the reflection mirror array after the described spectroscope refraction; Light after described first scanning reflection mirror or reflection mirror array scanning is surveyed slit or is surveyed slit array and described first energy-probe or energy-probe array through described first successively, enters the electric signal processing unit; Light after described second scanning reflection mirror or reflection mirror array scanning is surveyed slit or is surveyed slit array and described second energy-probe or energy-probe array through described second successively, enters the electric signal processing unit; Wherein, the phase place of the scan angle of described first scanning reflection mirror or reflection mirror array and second scanning reflection mirror or reflection mirror array differs 180 degree all the time.
Double-scanning type silicon chip focusing, leveling measurement mechanism of the present invention, wherein, described electric signal processing unit carries out phase demodulation by producing a square-wave signal to the electric signal of described first and second energy-probes or energy-probe array output, and it is identical all the time that the electric signal of first and second energy-probes or the output of energy-probe array is carried out the phase place of the employed square-wave signal of phase demodulation.Further, the frequency of described square-wave signal is identical with the resonance frequency of described first, second scanning reflection mirror or reflection mirror array.
Double-scanning type silicon chip focusing, leveling measurement mechanism of the present invention, wherein, described electric signal processing unit further comprises the first/the second bandpass filter, the first/the second multiplier, the first/the second low-pass filter and a subtracter; The electric signal of described the first/the second energy-probe output through the first/the second bandpass filter after, import the first/the second multiplier with described square-wave signal, the output signal of described the first/the second multiplier enters described subtracter via the first/the second low-pass filter again.Described subtracter carries out Difference Calculation to the output result of described first and second low-pass filters, obtain with described silicon chip surface at measuring light spot region inner height electric signal one to one.
The present invention also provides a kind of double-scanning type silicon chip focusing, leveling measuring system, and it comprises at least two foregoing double-scanning type silicon chip focusing, leveling measurement mechanisms, adopts mode in parallel or that connect to interconnect between described device and the device.
Compare with the focusing and leveling measurement apparatus of prior art, double-scanning type silicon chip focusing, leveling measurement mechanism of the present invention has following advantage: effectively the linearization zone is big, it is the visual field of same optical system, onesize spot size, onesize detection slit sizes, the present invention but can obtain the effective linearization zone about half as much again; The optical design difficulty is little, the structure relative compact promptly will realize onesize effective linearization zone, and double-scanning type silicon chip focusing, leveling measurement mechanism of the present invention only needs to design the optics visual field about half size, image quality control difficulty declines to a great extent, and one-piece construction is also compact.
Description of drawings
To the description of one embodiment of the invention, can further understand purpose, specific structural features and the advantage of its invention by following in conjunction with its accompanying drawing.Wherein, accompanying drawing is:
Fig. 1 has shown optical exposure system plane principle schematic;
Fig. 2 has shown the general structure synoptic diagram of a preferred embodiment of double-scanning type silicon chip focusing, leveling measurement mechanism of the present invention;
Fig. 3 has shown the control flow graph of electric signal processing unit of a preferred embodiment of double-scanning type silicon chip focusing, leveling measurement mechanism of the present invention;
Fig. 4 has shown the characteristic curve of a preferred embodiment of double-scanning type silicon chip focusing, leveling measurement mechanism of the present invention;
Fig. 5 has shown the sensitivity curve of the focusing and leveling measurement apparatus of prior art;
Fig. 6 has shown the sensitivity curve of a preferred embodiment of double-scanning type silicon chip focusing, leveling measurement mechanism of the present invention.
Embodiment
Below with reference to a preferred embodiment double-scanning type silicon chip focusing, leveling measurement mechanism of the present invention is described in further detail.Need to prove that mainly in probe unit, so in the present embodiment, the present invention has done to simplify to lighting unit, projecting cell and image-generating unit and handled summary of the invention of the present invention.In addition, more clear in order to make the present invention, single slit only is discussed in the present embodiment, the situation of single measurement hot spot, and for multimetering, principle of the present invention is suitable equally, only needs that the discrete component in the probe unit is replaced with element arrays and gets final product.
See also Fig. 2, shown the general structure synoptic diagram of a preferred embodiment of double-scanning type silicon chip focusing, leveling measurement mechanism of the present invention.As shown in the figure, measuring light 510 forms on silicon chip surface 420 and measures hot spot 421 through first catoptron 520, projection slit 525, second catoptron, 530 backs.After silicon chip surface 420 reflections, after 540 reflections of the 3rd catoptron, incide on the spectroscope 550.Light after spectroscope 550 reflections incides on first scanning reflection mirror 560, measuring light is after inciding the first detection slit 561 after 560 scannings of first scanning reflection mirror, enter on first energy-probe 562, the electric signal that first energy-probe 562 produces enters and carries out the electric signal processing in the electric signal processing unit 570.Light after spectroscope 550 refractions is through inciding behind the 4th catoptron 568 on second scanning reflection mirror 565, measuring light is after inciding the second detection slit 566 after 565 scannings of second scanning reflection mirror, enter on second energy-probe 567, the electric signal that second energy-probe 567 produces also enters and carries out the electric signal processing in the electric signal processing unit 570.Wherein, electric signal processing unit 570 is mainly finished two tasks, and first task is for driving the phase demodulation that first scanning reflection mirror 560 and 565, the second tasks of second scanning reflection mirror are first energy-probe 562 and the second energy detector, 567 output signals.The method of phase demodulation specific implementation is more, and present embodiment is that example is analyzed with multiplier and low-pass filter.
Fig. 3 has shown the control flow graph of electric signal processing unit of a preferred embodiment of double-scanning type silicon chip focusing, leveling measurement mechanism of the present invention.This electric signal processing unit 570 produces a square-wave signal 571, the frequency of this square-wave signal 571 is consistent with the resonance frequency of first scanning reflection mirror 560 and second scanning reflection mirror 565, this frequency is used for modulating measuring the signal that hot spot has elevation information, generally more than 2KHz, present embodiment supposes that the frequency of this signal is 1f to this signal frequency.The square-wave signal 571 that produces is directly used in and triggers first scanning reflection mirror 560 and scan, and this square-wave signal 571 is used to trigger second scanning reflection mirror 565 and scans after the phase delays of 180 degree simultaneously.The electric signal Vin2 of the electric signal Vin1 of first energy-probe, 562 outputs and 567 outputs of second energy-probe carries out Difference Calculation through entering subtracter 577 after first/the 2nd 1f bandpass filter 574a/574b, the first/the second multiplier 575a/575b and the first/the second low-pass filter 576a/576b respectively, obtain a magnitude of voltage Vout, Vout is measuring hot spot 421 regional inner heights electric signal one to one with silicon chip surface 420.The one 1f bandpass filter 574a and the 2nd 1f bandpass filter 574b are duplicate bandpass filter, and its centre frequency is identical with the frequency of square-wave signal 571, also are the sweep frequency of first scanning reflection mirror 560 and second scanning reflection mirror 565.The first multiplier 575a and the second multiplier 575b, the first low-pass filter 576a and the second low-pass filter 576b are also just the same.Multiplier and low-pass filter have constituted signal Vin1 and Vin2 phase demodulation link, and its output signal is the signal of 1f frequency among signal Vin1 and the Vin2.
Because the scanning phase place of first scanning reflection mirror 560 and second scanning reflection mirror 565 differs 180 degree all the time, and when phase demodulation, Vin1 and Vin2 use with same square-wave signal and carry out multiplication calculating, so voltage signal Vout1 and Vout2 are reverse all the time.Only used the some signals among voltage signal Vout1 and the Vout2 in the prior art, the present invention then uses its difference to be used for characterizing the height of silicon chip surface 420 in measuring hot spot 421 zones.It is 1mm that picture the width in first scanning reflection mirror 560 and second scanning reflection mirror 565 direction of scanning of hot spot 421 before the first detection slit 561 and second is surveyed slit 566 measured in supposition in the present embodiment, first slit width of surveying the slit 561 and the second detection slit 566 also is 1mm simultaneously, and the gain-adjusted in the electric signal processing unit 570 makes signal Vout1 and Vout2 maximum be no more than 8.5V.
Fig. 4 has shown the characteristic curve of a preferred embodiment of double-scanning type silicon chip focusing, leveling measurement mechanism of the present invention, its horizontal ordinate is for when first scanning reflection mirror 560 and second scanning reflection mirror, 565 scan angles being 0 degree or 180 when spending, in first side-play amount of surveying between center and the first detection slit 561 and the second detection slit, 566 centers of direction of scanning of the picture of slit 561 and second before surveying slit 566.Ordinate is the magnitude of voltage of energy-probe through phase demodulation output, and curve 581 is corresponding to voltage signal Vout, and curve 582 is corresponding to voltage signal Vout1, and curve 583 is corresponding to voltage signal Vout2.
Fig. 5 and Fig. 6 are respectively the characteristic curve of prior art and device involved in the present invention, its horizontal ordinate be when first scanning reflection mirror 560 and second scanning reflection mirror, 565 scan angles be 0 degree or 180 when spending, survey the side-play amount between slit 561 and the second detection slit, 566 centers in first center and first of surveying the direction of scanning of the picture of slit 561 and second before surveying slit 566.Under identical mechanical-optical setup, if require to use the zone of the above sensitivity of 0.015 volt/micron, prior art can only accurately be measured positive and negative approximately about 300 microns variation, present embodiment then can be measured positive and negative approximately about 450 microns variation, is the measurement range of about 1.5 times of prior aries.
From Fig. 4, Fig. 5 and Fig. 6 as can be seen, double-scanning type silicon chip focusing, leveling measurement mechanism involved in the present invention has the bigger characteristic curve of slope, has bigger sensitivity simultaneously.That is, in terms of existing technologies, the present invention has bigger linearization zone.And prior art then needs to increase the size of hot spot and detection slit as reaching the same characteristic curve of the present invention, and in multimetering, this will make optics relate to difficulty increases, and structure will be huger also.
Double-scanning type silicon chip focusing, leveling measurement mechanism of the present invention, can use separately according to actual needs, also can be used in combination, promptly adopt a plurality of said apparatus to link to each other to form the double-scanning type silicon chip focusing, leveling measuring system, so that satisfy different user demands with the form of in parallel or series connection.
Of particular note, double-scanning type silicon chip focusing, leveling measurement mechanism of the present invention is not limited to the structure defined in the foregoing description, although the present invention is had been described in detail with reference to preferred embodiment, those of ordinary skill in the art is to be understood that, can make amendment or be equal to replacement the present invention, and not breaking away from the spirit and scope of the present invention, it all should be encompassed in the middle of the claim scope of the present invention.
Claims (8)
1, a kind of double-scanning type silicon chip focusing, leveling measurement mechanism, be applied in the focusing and leveling system of projection mask aligner, described double-scanning type silicon chip focusing, leveling measurement mechanism is made up of lighting unit, projecting cell, image-generating unit and probe unit, described projecting cell is projected in silicon chip surface with slit or slit array, form and measure hot spot or spot array, it is characterized in that: described probe unit comprises first, second detection subelement, and the electric signal processing unit; The light beam of described image-generating unit outgoing enters the electric signal processing unit via the first and second detection subelements respectively and carries out phase demodulation.
2, double-scanning type silicon chip focusing, leveling measurement mechanism according to claim 1 is characterized in that: described the first/the second surveys the order that subelement propagates by light path corresponding to described slit or slit array is provided with successively: the first/the second scanning reflection mirror or reflection mirror array, the first/the second are surveyed slit or are surveyed slit array and the first/the second energy-probe or energy-probe array.
3, double-scanning type silicon chip focusing, leveling measurement mechanism according to claim 2 is characterized in that:
The light beam of described image-generating unit outgoing incides on described first scanning reflection mirror or the reflection mirror array after reflecting through a spectroscope, through then inciding on described second scanning reflection mirror or the reflection mirror array after the described spectroscope refraction;
Light after described first scanning reflection mirror or reflection mirror array scanning is surveyed slit or is surveyed slit array and described first energy-probe or energy-probe array through described first successively, enters the electric signal processing unit; Light after described second scanning reflection mirror or reflection mirror array scanning is surveyed slit or is surveyed slit array and described second energy-probe or energy-probe array through described second successively, enters the electric signal processing unit;
Wherein, the phase place of the scan angle of described first scanning reflection mirror or reflection mirror array and second scanning reflection mirror or reflection mirror array differs 180 degree all the time.
4, double-scanning type silicon chip focusing, leveling measurement mechanism according to claim 2, it is characterized in that: described electric signal processing unit carries out phase demodulation by producing a square-wave signal to the electric signal of described first and second energy-probes or energy-probe array output, and it is identical all the time that the electric signal of first and second energy-probes or the output of energy-probe array is carried out the phase place of the employed square-wave signal of phase demodulation.
5, double-scanning type silicon chip focusing, leveling measurement mechanism according to claim 4 is characterized in that: the frequency of described square-wave signal is identical with the resonance frequency of described first, second scanning reflection mirror or reflection mirror array.
6, double-scanning type silicon chip focusing, leveling measurement mechanism according to claim 4 is characterized in that: described electric signal processing unit further comprises the first/the second bandpass filter, the first/the second multiplier, the first/the second low-pass filter and a subtracter; The electric signal of described the first/the second energy-probe output through the first/the second bandpass filter after, import the first/the second multiplier with described square-wave signal, the output signal of described the first/the second multiplier enters described subtracter via the first/the second low-pass filter again.
7, double-scanning type silicon chip focusing, leveling measurement mechanism according to claim 6, it is characterized in that: described subtracter carries out Difference Calculation to the output result of described first and second low-pass filters, obtain with described silicon chip surface at measuring light spot region inner height electric signal one to one.
8, a kind of double-scanning type silicon chip focusing, leveling measuring system is characterized in that: comprise at least two double-scanning type silicon chip focusing, leveling measurement mechanisms as claimed in claim 1, adopt mode in parallel or that connect to interconnect between described device and the device.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104133345A (en) * | 2013-05-03 | 2014-11-05 | 上海微电子装备有限公司 | Device and method for focusing and levelling |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104133345A (en) * | 2013-05-03 | 2014-11-05 | 上海微电子装备有限公司 | Device and method for focusing and levelling |
| CN104133345B (en) * | 2013-05-03 | 2016-12-07 | 上海微电子装备有限公司 | A kind of focusing leveling device and method |
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Address after: 201203 Zhangjiang High Tech Park, Shanghai, Zhang Dong Road, No. 1525 Patentee after: Shanghai microelectronics equipment (Group) Limited by Share Ltd Address before: 201203 Zhangjiang High Tech Park, Shanghai, Zhang Dong Road, No. 1525 Patentee before: Shanghai Micro Electronics Equipment Co., Ltd. |