CN102087483A - Optical system for focal plane detection in projection lithography - Google Patents
Optical system for focal plane detection in projection lithography Download PDFInfo
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Abstract
The invention relates to an optical system for focal plane detection in projection lithography. A focus detection mark and a projection imaging system are arranged between a lighting system and a multi-reflection prism; a plane to be detected is located between the multi-reflection prism and a reflector; a focus detection mark amplification system is located between the reflector and a detector; the projection imaging system is matched with the lighting system to provide a lighting beam for lighting the focus detection mark; the multi-reflection prism is used for splitting the incident beam of the lighting system for lighting the focus detection mark into two or more detection beams with different positions; the focus detection mark can mark the position and form an image of each detection beam on the surface of the plane to be detected through the projection imaging system and multi-reflection prism; the detection beams reflected by the plane to be detected is amplified by the focus detection mark amplification system and is incident to the detector; and the detector detects the position of the reflected images amplified by the optical amplification system so as to detect the focal plane position and the focal plane inclination of a lithographic projection objective lens.
Description
Technical field
The present invention relates to a kind of automatic focal plane detection system, is a kind ofly the position of imaging surface to be moved the technology of measuring by the optical triangulation method.
Background technology
Lithographic equipment (litho machine) is one of visual plant of large scale integrated circuit production.Projection mask aligner can be imaged onto the figure on the mask plate by the imaging exposure device (as silicon chip etc.) on the object that will process by a certain percentage, and silicon chip is made a general reference all here and is exposed object, comprises substrate, plated film and photoresist etc.In exposure process, the respective surfaces of processing object (as silicon chip etc.) is remained within the focal depth range of exposure device.For this reason, projection mask aligner has adopted the focusing and leveling measuring system (focal plane detection system) of the surface position information that is used to measure processing object (as silicon chip etc.).Focusing and leveling measuring system can make the zone that is exposed of processing object (as silicon chip etc.) be within the depth of focus of projection mask aligner's exposure device with the machine table of clamping processing object (as silicon chip etc.) together always, thereby figure on the mask plate is transferred on the processing object (as silicon chip etc.) ideally.
Along with the figure section of projection mask aligner's resolution improves and constantly the reducing of projection objective depth of focus, the measuring accuracy of the focusing and leveling of litho machine being measured subsystem is with can to measure performance demands such as exposure area in real time also more and more higher.Therefore at present the focusing and leveling measuring system that is adopted in the advanced scanning projecting photoetching machine is generally photoeletric measuring system, as: based on the photoelectric measurement method (U.S. Pat 5191200) of grating and 4 quadrant detector, based on the photoelectric measurement method (U.S. Pat 6765647B1) of slit and 4 quadrant detector, based on the photo-detection method of PSD (position sensitive detector) (Chinese patent: 200610117401) with based on the photo-detection method (Chinese patent: 200710171968) of grating Moire fringe.The measuring position of above-mentioned focusing and leveling measuring system is single position, promptly can only test on the processing object certain average positional information a bit or in a certain tiny area.Measure two big functions for realizing focusing and leveling that projection mask aligner is required, need to adopt some cover focal plane detection systems (as: Overlay and field leveling in wafersteppers using an advanced metrology system, SPIE Vol.1673) adopt or in a system several marks (as United States Patent (USP): US5191200), make whole focusing and leveling measuring system very redundant like this.
Summary of the invention
For solve an above-mentioned cover optical system only can carry out to certain a bit or a certain tiny area carry out focal plane and detect, realize that the required focusing and leveling of projection mask aligner two big functions need adopt some cover focal plane detection systems, thereby the very redundant problem of whole focusing and leveling measuring system, the objective of the invention is to utilize a cover optical system to finish position of focal plane and tilt detection in the projection lithography, realize the function that focusing, leveling are measured.
For realizing purpose of the present invention, the invention provides and be used for the optical system that the projection lithography focal plane detects, the technical scheme that described optical system technical solution problem is adopted comprises: illuminator, focusing test mark, projection imaging system, repeatedly reflecting prism, detected, catoptron, focusing test mark amplification system and sensitive detection parts; Focusing test mark and projection imaging system be in illuminator with repeatedly between the reflecting prism, and detected repeatedly between reflecting prism and the catoptron, and focusing test mark amplification system is between catoptron and sensitive detection parts; Projection imaging system and illuminator coupling provide illumination light for illumination focusing test mark, repeatedly reflecting prism is divided into two bundles or the above detection light of two bundles with the incident light of the illumination focusing test mark of illuminator, and the position of every bundle detection light is inequality, the focusing test mark by projection imaging system and repeatedly reflecting prism mark that every bundle is surveyed optical position be imaged onto on detected the surface, through the detection light after detected the reflection, after amplifying, focusing test mark amplification system incides on the sensitive detection parts, utilize sensitive detection parts to survey reflected image position after optical amplification system amplifies, the position of focal plane and the focal plane of photoetching projection objective lens tilted to detect.
Utilize the described optical system that the projection lithography focal plane detects that is used for, can also be applied to other occasions of needing to detect image-forming objective lens actual imaging face and desirable position of focal plane difference, be used for the image-forming objective lens focal plane and detect and can also be applied to the occasion that needs the precision positions detection.
Beneficial effect of the present invention: in the present invention,, only adopt a cover optical system by introducing repeatedly reflecting prism, position of focal plane detection and focal plane tilt detection have been realized simultaneously, not only reduce the system complex degree, also reduced error source, improved detection accuracy.The present invention just can realize the tilt detection of the face that is detected by the position sensing of a plurality of points.Because all detection light all is to be sent by same light source and same certification mark, so each surveys light strict conformance, and these survey light all by same optical system, therefore can eliminate the difference that optical system such as processed, debugs at the factor generation; Comprehensive above advantage, such structure arrangement can increase the precision that leveling and focusing is surveyed.
Description of drawings
Fig. 1 is projection mask aligner's schematic diagram.
Fig. 2 is the schematic diagram of the optical system that focal plane detects in the focal plane detection optical system projection mask aligner of the present invention among Fig. 1.
Fig. 3 is principle of reflection figure repeatedly.
Fig. 4 for detect light path at detected reflected light path synoptic diagram.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
Fig. 1 shows the schematic diagram of projection mask aligner, leveling and focusing detection system 4a, processing object 5a and article carrying platform 6a that projection mask aligner contains optical axis 1a, mask plate 2a, photoetching projection objective lens 3a, is made up of a plurality of focal plane detection optical system.Mask plate 2a places the object plane of photoetching projection objective lens 3a, and processing object 5a (as silicon chip etc.) places on the article carrying platform 6a.During photolithographic exposure, need mobile article carrying platform 6a to make the plane of exposure of processing object 5a be on the focal plane of photoetching projection objective lens 3a.For making the image on the mask plate 2a be transferred to accurately on the processing object 5a, need survey accurately and adjust the plane of exposure of processing object 5a and the relative position of photoetching projection objective lens 3a (comprising distance and inclination), make the whole exposure area for the treatment of of processing object 5a all be in the focal depth range of photoetching projection objective lens 3a.For reaching this purpose, just need carry out precision to the position for the treatment of the exposure area on the processing object 5a and detect, and give the focusing and leveling executive system feedback of article carrying platform 6a by the leveling and focusing detection system 4a that a plurality of focal plane detection optical system are formed.
Shown in Fig. 2 is improvement to focal plane detection optical system among Fig. 1, the optical system that focal plane detects in the projection mask aligner provided by the invention is to utilize triangulation method, optical system of the present invention comprises: illuminator 1, focusing test mark 2, projection imaging system 3, repeatedly reflecting prism 4, detected 5, catoptron 6, focusing test mark amplification system 7 and sensitive detection parts 8 are formed, focusing test mark 2 and projection imaging system 3 are in illuminator 1 with repeatedly between the reflecting prism 4, detected 5 repeatedly between reflecting prism 4 and the catoptron 6, and focusing test mark amplification system 7 is between catoptron 6 and sensitive detection parts 8; Projection imaging system 3 provides illumination light with illuminator 1 coupling for illumination focusing test mark 2, repeatedly reflecting prism 4 is divided into two bundles or the above detection light of two bundles with the incident light of the illumination focusing test mark 2 of illuminator 1, and the position of every bundle detection light is inequality, focusing test mark 2 by projection imaging system 3 and repeatedly reflecting prism 4 mark that every bundle is surveyed optical position be imaged onto on detected 5 surface, detection light after detected 5 reflection of process, after amplifying, focusing test mark amplification system 7 incides on the sensitive detection parts 8, utilize sensitive detection parts 8 to survey reflected image position after optical amplification system 7 amplifies, position of focal plane and the focal plane of photoetching projection objective lens 3a tilted to detect.
Illuminate focusing test mark 2 after the polishing shape that illuminator 1 is sent light source; Focusing test mark 2 is through projection imaging system 3 and repeatedly be imaged on detected 5 behind the reflecting prism 4; Repeatedly the upper surface of reflecting prism 4 has dichroism, and repeatedly the lower surface of reflecting prism 4 has reflection characteristic, therefore incident light is through after repeatedly reflecting prism 4 reflects, to form a reflection ray, be about to focusing test mark 2 and form a plurality of pictures with duplication characteristic, it is strict conformance that these pictures are not subjected to its shape of focusing test label creating technogenic influence and position relation; The picture of focusing test mark 2 through the reflection of detected 5 and catoptron 6 after by focusing test mark amplification system 7 amplification imagings on sensitive detection parts 8, the light signal that sensitive detection parts 8 obtain will be converted to electric signal, by corresponding Circuits System detection signal be read.Obtain the ideal image position of focal plane of photoetching projection objective lens 3a and the surface detection system of focusing is demarcated by technological experiment, this focal plane detection system can record the alternate position spike of photoetching projection objective lens 3a actual imaging face and desirable focal plane in real time after demarcating.
Described illuminator 1 adopts broadband or monochromatic source, comprises light source commonly used in the engineerings such as Halogen lamp LED, xenon lamp, LED or laser instrument;
Described focusing test mark 2 is that the sensitive detection parts of being convenient to light and shade form detect mark, and wherein the mark of light and shade form is: spider, straight line, grating, round dot and circle a kind of.
The external reflection dielectric surface of described repeatedly reflecting prism 4 is a light splitting surface, need utilize the partial reflection on reflecting medium surface or make it reach certain splitting ratio by methods such as plated films according to reality, repeatedly reflecting prism 4 is divided into two bundle detection light or the above detection light of two bundles with the detection light of incident.The spectroscopic property of the reflective outer surface of described repeatedly reflecting prism 4 can be the color separation beam split, also can be neutral beam split.Described repeatedly reflecting prism 4 can be parallel light through the chief ray of outside surface reflection with reflecting the chief ray that reflects through outside surface again through inside surface, also can be light at angle.
Described detected 5 is the plane with direct reflection, diffuse reflection or scattering nature, the curved surfaces that are positioned at photoetching projection objective lens 1a image planes.
Described sensitive detection parts 8 are to be not limited to CCD planar array detector 8, can also be cmos device, two quadrant detectors, 4 quadrant detector, position sensor (PSD) and a kind of in the photodetection class device of light signal sensitivity.
As shown in Figure 3, after light incided repeatedly reflecting prism 4, part light was by the repeatedly front surface reflection of reflecting prism 4, the part light transmission repeatedly reflecting prism 4 front surface and by the rear surface reflection of reflecting prism 4 repeatedly again through the front surface outgoing.If appropriate design is the transmitance and the reflectivity of reflecting prism 4 front and rear surfaces repeatedly, then can make incident light be divided into two bundles or the above light of two bundles.These light send by same light source and same focusing test mark 2, have strict copy feature.
As shown in Figure 4, the detection light that goes out by 3 projections of focusing test mark projection imaging system by focusing test mark 2 be divided into two bundles or two bundles above after, incide respectively on detected 5.These survey the skew that the light along continuous straight runs has X, that is to say that also there is the skew of X the location to be detected, by the position sensing of a plurality of points, just can realize detected tilt detection.Because all detection light all is to be sent by same light source and same focusing test mark 2, so each surveys the light strict conformance; And these survey light all by same optical system, therefore can eliminate the difference that optical system such as processed, debugs at the factor generation; Comprehensive above advantage, such structure arrangement can increase the precision that leveling and focusing is surveyed.
Above-mentioned the drawings and specific embodiments only are one embodiment of the invention, are not deviating under the invention scope prerequisite that invention spirit of the present invention and claims are defined, and the present invention can have and variously augments, revises and substitute.Therefore, the foregoing description is to be used to illustrate illustration the present invention but not to limit the scope of the invention, and have the right requirement and legal equivalents thereof of scope of the present invention defines, and is not limited thereto preceding description.Claims are intended to contain all these type of coordinators.
Claims (9)
1. one kind is used for the optical system that the projection lithography focal plane detects, and it is characterized in that: by illuminator (1), focusing test mark (2), projection imaging system (3), repeatedly reflecting prism (4), detected (5), catoptron (6), focusing test mark amplification system (7) and sensitive detection parts (8) are formed; Focusing test mark (2) and projection imaging system (3) are positioned at illuminator (1) and repeatedly between the reflecting prism (4), detected (5) are positioned at repeatedly between reflecting prism (4) and the catoptron (6), and focusing test mark amplification system (7) is positioned between catoptron (6) and the sensitive detection parts (8); Projection imaging system (3) provides illumination light with illuminator (1) coupling for illumination focusing test mark (2), repeatedly reflecting prism (4) is divided into two bundles or the above detection light of two bundles with the incident light of the illumination focusing test mark (2) of illuminator (1), and the position of every bundle detection light is inequality, focusing test mark (2) by projection imaging system (3) and repeatedly reflecting prism (4) mark that every bundle is surveyed optical position be imaged onto on detected (5) surface, through the detection light after detected (5) reflection, after amplifying, focusing test mark amplification system (7) incides on the sensitive detection parts (8), utilize sensitive detection parts (8) to survey reflected image position after optical amplification system (7) amplifies, the position of focal plane and the focal plane of photoetching projection objective lens (3a) tilted to detect.
2. the optical system that is used for the detection of projection lithography focal plane according to claim 1, it is characterized in that: described illuminator (1) adopts broadband or monochromatic source, and described broadband or monochromatic source comprise light source commonly used in Halogen lamp LED, xenon lamp, LED, laser instrument or the engineering.
3. the optical system that is used for the detection of projection lithography focal plane according to claim 1, it is characterized in that: described focusing test mark (2) has the mark that sensitive detection parts are surveyed of being convenient to of light and shade form, and wherein the mark of light and shade form is a kind of in spider, straight line, grating, round dot and the circle.
4. the optical system that is used for the detection of projection lithography focal plane according to claim 1, it is characterized in that: the reflective outer surface of described repeatedly reflecting prism (4) is a light splitting surface, described light splitting surface is to utilize the partial reflection on reflecting medium surface or make light splitting surface reach the splitting ratio of setting by film plating process, and repeatedly reflecting prism (4) is divided into two bundles or the above detection light of two bundles with the detection light of incident.
5. according to claim 4ly be used for the optical system that the projection lithography focal plane detects, it is characterized in that: the spectroscopic property of the reflective outer surface of described repeatedly reflecting prism (4) can be the color separation beam split, also can be neutral beam split.
6. the optical system that is used for the detection of projection lithography focal plane according to claim 4, it is characterized in that: described repeatedly reflecting prism (4) can be parallel light through the chief ray of outside surface reflection with reflecting the chief ray that reflects through outside surface again through inside surface, also can be light at angle.
7. the optical system that is used for the detection of projection lithography focal plane according to claim 1, it is characterized in that: described detected (5) are the plane with direct reflection, diffuse reflection or scattering nature, the curved surfaces that is positioned at photoetching projection objective lens (1a) image planes.
8. the optical system that is used for the detection of projection lithography focal plane according to claim 1, it is characterized in that: described sensitive detection parts (8) are not limited to the CCD planar array detector, can also be cmos device, two quadrant detectors, 4 quadrant detector, position sensor and a kind of in the photodetection class device of light signal sensitivity.
9. utilize that claim 1 is described to be used for the optical system that the projection lithography focal plane detects, can also be applied to other occasions of needing to detect image-forming objective lens actual imaging face and desirable position of focal plane difference, be used for the image-forming objective lens focal plane and detect and can also be applied to the occasion that needs the precision positions detection.
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102236270A (en) * | 2011-07-29 | 2011-11-09 | 中国科学院光电技术研究所 | Focus detection device applicable to double workpiece table projection lithography machine |
| CN102243138A (en) * | 2011-08-05 | 2011-11-16 | 中国科学院光电技术研究所 | Focal plane detection device for projection lithography |
| CN103744269A (en) * | 2014-01-03 | 2014-04-23 | 中国科学院上海光学精密机械研究所 | Detection method of wave aberration and optical imaging focal plane of photoetching projection objective |
| WO2016107573A1 (en) * | 2014-12-31 | 2016-07-07 | 上海微电子装备有限公司 | Pre-alignment measuring device and method |
| TWI567365B (en) * | 2014-12-31 | 2017-01-21 | Self-adjusting groove focusing and leveling device and method thereof | |
| WO2017206755A1 (en) * | 2016-05-31 | 2017-12-07 | 上海微电子装备（集团）股份有限公司 | Focusing and leveling measurement device and method |
| CN109443210A (en) * | 2018-12-13 | 2019-03-08 | 苏州亿拓光电科技有限公司 | Optical position detection device and method |
| JP2019215399A (en) * | 2018-06-11 | 2019-12-19 | キヤノン株式会社 | Exposure method, exposure device, method for manufacturing article and measurement method |
| CN112846485A (en) * | 2020-12-31 | 2021-05-28 | 武汉华工激光工程有限责任公司 | Laser processing monitoring method and device and laser processing equipment |
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Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102236270A (en) * | 2011-07-29 | 2011-11-09 | 中国科学院光电技术研究所 | Focus detection device applicable to double workpiece table projection lithography machine |
| CN102243138A (en) * | 2011-08-05 | 2011-11-16 | 中国科学院光电技术研究所 | Focal plane detection device for projection lithography |
| CN103744269A (en) * | 2014-01-03 | 2014-04-23 | 中国科学院上海光学精密机械研究所 | Detection method of wave aberration and optical imaging focal plane of photoetching projection objective |
| CN103744269B (en) * | 2014-01-03 | 2015-07-29 | 中国科学院上海光学精密机械研究所 | The detection method of wave aberration of photoetching projection objective and imaging optimal focal plane |
| TWI567365B (en) * | 2014-12-31 | 2017-01-21 | Self-adjusting groove focusing and leveling device and method thereof | |
| CN105807579A (en) * | 2014-12-31 | 2016-07-27 | 上海微电子装备有限公司 | Silicon chip and substrate prealignment measurement device and method |
| WO2016107573A1 (en) * | 2014-12-31 | 2016-07-07 | 上海微电子装备有限公司 | Pre-alignment measuring device and method |
| CN105807579B (en) * | 2014-12-31 | 2018-10-16 | 上海微电子装备（集团）股份有限公司 | A kind of silicon chip and substrate prealignment measuring device and method |
| US10197390B2 (en) | 2014-12-31 | 2019-02-05 | Shanghai Micro Electronics Equipment (Group) Co., Ltd. | Pre-alignment measurement device and method |
| WO2017206755A1 (en) * | 2016-05-31 | 2017-12-07 | 上海微电子装备（集团）股份有限公司 | Focusing and leveling measurement device and method |
| US10656507B2 (en) | 2016-05-31 | 2020-05-19 | Shanghai Micro Electronics Equipment (Group) Co., Ltd. | Focusing and leveling measurement device and method |
| JP2019215399A (en) * | 2018-06-11 | 2019-12-19 | キヤノン株式会社 | Exposure method, exposure device, method for manufacturing article and measurement method |
| JP7137363B2 (en) | 2018-06-11 | 2022-09-14 | キヤノン株式会社 | Exposure method, exposure apparatus, article manufacturing method and measurement method |
| CN109443210A (en) * | 2018-12-13 | 2019-03-08 | 苏州亿拓光电科技有限公司 | Optical position detection device and method |
| CN112846485A (en) * | 2020-12-31 | 2021-05-28 | 武汉华工激光工程有限责任公司 | Laser processing monitoring method and device and laser processing equipment |
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